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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 469 records · Page 26
All sourcesNASA NTRSDOE OSTI
NASA NTRS1986

Japan's participation in space station design: Feasibility study of GaAs solar cells for space station applications

The report gives the results of feasibility studies and a cost analysis done on GaAs solar battery cells for space stations. The studies and their results are as follows: (1) Cell size - The 2 x 4 cm cell size was found superior to the 4 x 4 cm cell; (2) Manufacturing technology - Overall, LPE crystal growth was found more suitable than MO-CVD. Current technology for post-growth processes and applying large-area cover glass can be used with few or no modifications; (3) Cell assemblies - Tests for mechanical and thermal stresses encountered from assembly through operation are recommended; (4) Procuring materials - Steps should be taken to avoid sharp price increases due to a speculative gallium market. There are no problems with arsenic materials; (5) Production facilities - The capital investment needed remains to be determined, but a working area of 4000 m2 will be required; (6) Cell costs to be determined; (7) Cell development-supply plan - Two-year lead time will be needed to develop the necessary technology and prepare for production.

Source record↗
NASA NTRS1986

Silicon production in an aerosol reactor

An aerosol reactor system was developed in which large particles of silicon can be grown by silane pyrolysis. To grow particles to sizes larger than one micron, vapor deposition must be used to grow a relatively small number of seed particles. Suppression of nucleation is achieved by limiting the rate of gas phase chemical reactions such that the condensible products of the gas phase chemical reactions diffuse to the surface of the seed particles as rapidly as they are produced. This prevents high degrees of supersaturation and runaway nucleation during the growth process. Particles on the order of 10 microns were grown repeatedly with the present aersol reactor. The nucleation controlled aerosol reactor is, therefore, a suitable system for the production of powders that can readily be separated from the gas by aerodynamic means.

Wu, J. J.↗
NASA NTRS1986

Debris-cloud collisions: Accretion studies in the space station

The growth of planetesimals in the Solar system reflects the success of collisional aggregation over disruption. Recent experiments performed at the NASA-Ames Vertical Gun Range are discussed using the production of debris cloud impaction to model protoplanetary accretion. The impact experiment assessed the differences between clustered and single body impacts on particulate surfaces. The preliminary results would indicate that collisions between two debris clouds might produce aggregates, thereby increasing particle sizes, whereas a single particle impacting a particle results in disruption and comminution. Such an experiment could provide new insight for early planetary growth processes and for interpreting the record of this stage. The use of the microgravity environment of the Space Station to further the research is discussed.

Schultz, P. H.↗
NASA NTRS1985

Web team overview

Analytical and experimental work were combined to develop a stress model to determine the temperature profile which will yield a satisfactory web. A thermal model of the web will be used to determine the thermal configuration which will yield the desired temperature profile. Thermal analysis of growth interface and the susceptor melt will be developed to determine a thermal configuration which will improve stability of growth process. The thermal configurations will be designed, fabricated, and tested and the results fed back into the models.

Mcdonald, R. R.↗
NASA NTRS1985

Silicon sheet surface studies

Results of the program are presented on developing an understanding of the basic mechanisms of abrasion and wear of silicon and on the nondestructive measurement of residual stresses in sheet silicon. Experiments were conducted at various temperatures and in the presence of various fluids. In abrasive wear, it was shown that dislocations, microtwins, and cracks are generated beneath the contact surface. Residual stresses in ribbon by the edge defined film growth process were measured by use of a shadow moire interferometry technique.

Danyluk, S.↗
NASA NTRS1985

Correlations and droplet growth

Consideration is given to the time development of a system in which small spheres of a stable phase grow out of a supersaturated melt. The spheres then grow and shrink in a manner similar to Ostwald ripening. The growth process of pairs of particles in an effective background accounts for can be used to explain the long time correlations which develop in the system. The correlations broaden the distribution of particles sizes, even for relatively dilute systems.

Marder, M.↗
NASA NTRS1986

Exponential order statistic models of software reliability growth

Failure times of a software reliability growth process are modeled as order statistics of independent, nonidentically distributed exponential random variables. The Jelinsky-Moranda, Goel-Okumoto, Littlewood, Musa-Okumoto Logarithmic, and Power Law models are all special cases of Exponential Order Statistic Models, but there are many additional examples also. Various characterizations, properties and examples of this class of models are developed and presented.

Miller, D. R.↗
NASA NTRS1986

Software reliability modeling and analysis

A discrete and, as approximation to it, a continuous model for the software reliability growth process are examined. The discrete model is based on independent multinomial trials and concerns itself with the joint distribution of the first occurrence time of its underlying events (bugs). The continuous model is based on the order statistics of N independent nonidentically distributed exponential random variables. It is shown that the spacings between bugs are not necessarily independent or exponentially (geometrically) distributed. However, there is a statistical rationale for viewing them so conditionally. Some identifiability problems are pointed out and resolved. In particular, it appears that the number of bugs in a program is not identifiable. Estimated upper bounds and confidence bounds for the residual program eror content are given based on the spacings of the first k bugs removed.

Scholz, F.-W.↗
NASA NTRS1986

Quantitative Schlieren analysis applied to holograms of crystals grown on Spacelab 3

In order to extract additional information about crystals grown in the microgravity environment of Spacelab, a quantitative schlieren analysis technique was developed for use in a Holography Ground System of the Fluid Experiment System. Utilizing the Unidex position controller, it was possible to measure deviation angles produced by refractive index gradients of 0.5 milliradians. Additionally, refractive index gradient maps for any recorded time during the crystal growth were drawn and used to create solute concentration maps for the environment around the crystal. The technique was applied to flight holograms of Cell 204 of the Fluid Experiment System that were recorded during the Spacelab 3 mission on STS 51B. A triglycine sulfate crystal was grown under isothermal conditions in the cell and the data gathered with the quantitative schlieren analysis technique is consistent with a diffusion limited growth process.

Brooks, Howard L.↗
NASA NTRS1987

In situ observation of mono-molecular growth steps on aqueous solution grown crystals and the transport of molecules to the crystals

Direct in situ observation of mono-molecular growth steps on a crystal growing in an aqueous solution became possible. The combination of this method with high resolution Schlieren methods or interferometry, permits the growth mechanism of crystals to be investigated directly. Since the observation of growth steps on crystals is the most direct and sensitive way for investigating a crystal growth mechanism, it would contribute to revealing fundamental differences between the growth in space and on Earth. The method was recently extended to in situ observation of the growth processes at high temperatures (1800K).

Tsukamoto, Katsuo↗
NASA NTRS1987

Computational analyses of crystal growth

Two important aspects of Hg/Cd/Te crystal growth processes are discussed. First, the thermal field and second, the fluid movement in the melt zone. The thermal analysis includes numerical calculation of axisymmetric heat conduction within the sample. It also includes a three-dimensional radiation model to calculate the radiative heat exchange between the furnace and the crystal as determined by the complex geometry of the furnace and the adiabatic shield. The thermal analysis also includes a crystal conductivity which is dependent on temperature and composition. To tackle the fluid flow aspect of the problem, an attempt was made to use a newly developed incompressible flow code based on the slight compressibility, and hence the finite sound speed, of all real fluids.

Dakhoul, Youssef M.↗
NASA NTRS1985

An analysis of doping modulated superlattice structures

A new method of growing doping modulated superlattice structures is discussed. This method uses organo-metallic chemical vapor deposition (MO-CVD) with the added feature of controlled plasma in the growth regions. The main objective was to study how the growth environment affected the electronic and optical properties of the superlattice structures. Because a serious safety hazard was discovered in the growth process, no superlattice structures were fabricated and the research on this material had to be terminated. The hazard had to do with the lack of adequate means for the disposal of toxic elemental beryllium.

Buoncristiani, A. M.↗
NASA NTRS1987

Growth and characterization of cubic SiC single-crystal films on Si

Morphological and electrical characterization results are presented for cubic SiC films grown by chemical vapor deposition on single-crystal Si substrates. The films, up to 40 microns thick, were characterized by optical microscopy, (SEM), (TEM), electron channeling, surface profilometry, and Hall measurements. A variety of morphological features observed on the SiC films are described. Electrical measurements showed a decrease in the electron mobility with increasing electron carrier concentration, similar to that observed in Si. Room-temperature electron mobilities up to 520 sq cm/V-s (at an electron carrier concentration of 5 x 10 to the 16th/cu cm) were measured. Finally, a number of parameters believed to be important in the growth process were investigated, and some discussion is given of their possible effects on the film characteristics.

Powell, J. Anthony↗
NASA NTRS1988

Automatic Replenishment Of Dopant In Silicon Growth

Dopant incorporated feed pellets to maintain required concentration. Technique of continuous replenishment of dopant in silicon melt helps ensure correct resistivity in solid silicon grown from melt. Technique used in dendritic-web growth process in which ribbon of silicon continously pulled from molten material. Providing uniform doping and resistivity in ribbon technique enables production of high-quality silicon ribbon at high yields for use in semiconductor devices.

Kochka, E. L.↗
NASA NTRS1988

X-ray diffraction imaging (topography) of electroopticcrystals by synchrotron radiation

Information of special interest to crystal growers and device physicists now available from monochromatic synchrotron diffraction imaging (topography) is reviewed. Illustrations are taken from a variety of electro-optic crystals. Aspects of the detailed understanding of crystal growth processes obtainable from carefully selected samples are described. Finally, new experimental opportunities now available for exploitation are indicated.

Steiner, Bruce↗
NASA NTRS1988

Diffraction imaging (topography) with monochromatic synchrotron radiation

Structural information of special interest to crystal growers and device physicists is now available from high resolution monochromatic synchrotron diffraction imaging (topography). In the review, the importance of superior resolution in momentum transfer and in space is described, and illustrations are taken from a variety of crystals: gallium arsenide, cadmium telluride, mercuric iodide, bismuth silicon oxide, and lithium niobate. The identification and understanding of local variations in crystal growth processes are shown. Finally, new experimental opportunities now available for exploitation are indicated.

Steiner, Bruce↗
NASA NTRS1987

Holographic flow field analysis in Spacelab-3 crystal growth experiments

Holographic flow field analysis has been applied in a crystal growth experiment conducted on NASA's space shuttle program on Spacelab-3 during April 29 - May 6,l985. The experimental holograms taken during the crystal growth process are reconstructed into interferograms and later digitized to give refractive-index fields: A comparison has been made with theoretically computed interferograms.

Lal, R. B.↗
NASA NTRS1988

Tunneling effects in the current-voltage characteristics of high-efficiency GaAs solar cells

Evidence is that tunneling via states in the forbidden gap is the dominant source of excess current in the dark current-voltage (I-V) characteristics of high-efficiency DMCVD grown Al(x)Ga(1-x)As/GaAs(x is equal to or greater than 0.85) solar cells. The dark forward and reverse I-V measurements were made on several solar cells, for the first time, at temperatures between 193 and 301 K. Low-voltage reverse-bias I-V data of a number of cells give a thermal activation energy for excess current of 0.026 + or - 0.005 eV, which corresponds to the carbon impurity in GaAs. However, other energy levels between 0.02 eV and 0.04 eV were observed in some cells which may correspond to impurity levels introduced by Cu, Si, Ge, or Cd. The forward-bias excess current is mainly due to carrier tunneling between localized levels created in the space-charge layer by impurities such as carbon, which are incorporated during the solar cell growth process. A model is suggested to explain the results.

Kachare, R.↗