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NASA NTRS1984

Response of Inconel 617 superalloy to combined ground-based and STS reentry exposure

Inconel 617 is a nickel-based superalloy which is being considered for heat-shield applications because of its high-temperature strength, good oxidation resistance and high emittance of oxidized surfaces. While the effects of simulated reentry conditions on emittance and oxidation of Inconel 617 have been studied, the combined effects of the ground-based environment with sea salt exposure and the reentry environment have not been evaluated. Experimental results are presented to show the effects of environmental simulation including ground-based and reentry exposure on the emittance and oxidation of Inconel 617. Specimens were exposed to simulated reentry at a surface temperature of 2000 F in the Langley Research Center Hypersonic Materials Environmental Test System (HYMETS) Facility with and without alternate exposures to an atmospheric seashore environment or a laboratory sea salt environment. This paper presents emittance, mass loss, oxide chemistry, and alloy composition data for the specimens.

Clark, R. K.↗

NASA NTRS1984

Response of Inconel 617 superalloy to combined ground-based and STS reentry exposure

Clark, R. K.↗

NASA NTRS1986

Comments on determination of bandgap narrowing from activation plots

A determination is made of the temperature-dependence of emitter saturation current in bipolar devices which allows the derivation of a value for bandgap narrowing that is in better agreement with other determinations than previous results based on ohmic contact measurements of temperature dependence. The new values were obtained by varying the surface recombination velocity at the emitter surface. This improves accuracy by varying the minority carrier surface recombination velocity at the emitter contacts of otherwise indistinguishable emitters.

Park, J.-S.↗

NASA NTRS1987

Radiative cooling of a layer with nonuniform velocity - A separable solution

Analyzed here is the cooling of a flowing plane layer filled with hot particles or liquid droplets that emit, absorb, and scatter radiation. The velocity distribution is nonuniform across the layer and the specified shape of this distribution affects the layer temperature distribution and emittance. The velocity distribution determined is one that will cause the layer to cool at a uniform temperature. Thus, if the layer initially has a uniform temperature, it will retain the same emittance throughout its length. A separable solution is found that applies in a 'fully developed' region following an initial cooling length. In this developed region, the solution shows that there is a constant emittance based on the local heat loss and local bulk mean layer temperature. This emittance is a function of the velocity distribution, optical thickness, and scattering albedo.

Siegel, Robert↗

NASA NTRS1988

Transient radiative cooling of an absorbing and scattering cylinder - A separable solution

A cylindrical region filled with absorbing-emitting material is cooled by radiation to surroundings at a much lower temperature. A solution is found showing that, for each set of parameters, the transient radial temperature distribution reaches a fixed shape, although the temperatures are decreasing with time. This 'fully developed' transient region is characterized by having a constant emittance based on instantaneous values of the cylinder heat loss and mean temperature. This emittance depends only on the optical radius of the cylinder and the scattering albedo. The emittance is lower than that for a cylinder at uniform temperature. This arises from the larger local cooling and, hence, reduced temperatures of the outer layers of the cylinder. An examination of this transient emittance provides the ranges of parameters within which the simplification can be made that the cylinder has uniform radial temperature distribution throughout the cooling process.

Siegel, Robert↗

NASA NTRS1989

Optical properties of sputtered aluminum on graphite/epoxy composite material

Solar absorptance, emittance, and coating thickness were measured for a range of coating thicknesses from about 400 A to 2500 A. The coatings were sputtered from an aluminum target onto 1-inch-diameter substrates of T300/5209 graphite/epoxy composite material with two different surface textures. Solar absorptance and emittance values for the specimens with the smooth surface finish were lower than those for the specimens with the rough surface finish. The ratio of solar absorptance to emittance was higher for the smooth specimens, increasing from 2 to 4 over the coating thickness range, than for the rough ones, which had a constant ratio of about 1. The solar absorptance and emittance values were dependent on the thickness of the sputtered coating.

Witte, William G., Jr.↗

NASA NTRS1990

Optical property measurements as a diagnostic tool for control of materials processing in space and on Earth

A new method is described, including results, to measure, control, and follow containerless processing in ground based levitators. This technique enables instantaneous optical property measurements from a transient solid or liquid surface concurrent with true temperature measurement. This was used successfully as a diagnostic tool to follow processing of Al, Si, and Ti during electromagnetic levitation. Experiments on Al show the disappearance of the oxide (emittance 0.33) at ca. 1300 C leaving a liquid surface with an emittance of 0.06. Electromagnetic levitation of silicon shows a liquid with a constant emittance (0.2) but with a solid whose emittance decreases very rapidly with increasing temperature. Consequently, the processing of materials at high temperatures can be controlled quite well through the control of surface optical properties.

Krishnan, Shankar↗

NASA NTRS1992

A comparison of techniques for extracting emissivity information from thermal infrared data for geologic studies

This article evaluates three techniques developed to extract emissivity information from multispectral thermal infrared data. The techniques are the assumed Channel 6 emittance model, thermal log residuals, and alpha residuals. These techniques were applied to calibrated, atmospherically corrected thermal infrared multispectral scanner (TIMS) data acquired over Cuprite, Nevada in September 1990. Results indicate that the two new techniques (thermal log residuals and alpha residuals) provide two distinct advantages over the assumed Channel 6 emittance model. First, they permit emissivity information to be derived from all six TIMS channels. The assumed Channel 6 emittance model only permits emissivity values to be derived from five of the six TIMS channels. Second, both techniques are less susceptible to noise than the assumed Channel 6 emittance model. The disadvantage of both techniques is that laboratory data must be converted to thermal log residuals or alpha residuals to facilitate comparison with similarly processed image data. An additional advantage of the alpha residual technique is that the processed data are scene-independent unlike those obtained with the other techniques.

Hook, Simon J.↗

NASA NTRS1992

Progress in p(+)n InP solar cells fabricated by thermal diffusion

In SPRAT XI, we proposed that p(sup +)n diffused junction InP solar cells should exhibit a higher conversion efficiency than their n(sup +)p counterparts. This was mainly due to the fact that our p(sup +)n (Cd,S) cell structures consistently showed higher V (sub OC) values than our n(sup +)p (S,Cd) structures. The highest V(sub OC) obtained with the p(sup +)n (Cd,S) cell configuration was 860 mV, as compared to the highest V(sub OC) 840 mV obtained with the n(sup +)p (S,Cd) configuration (AMO, 25 C). In this work, we present the performance results of our most recent thermally diffused cells using the p(sup +)n (Cd,S) structure. We have been able to fabricate cells with V(sub OC) values approaching 880 mV. Our best cell with an unoptimized front contact grid design (GS greater than or equal to 10%) showed a conversion efficiency of 13.4% (AMO, 25 C) without an AR coating layer. The emitter surface was passivated by a -50A P rich oxide. Achievement of such high V(sub OC) values was primarily due to the fabrication of emitter surfaces, having EPD densities as low as 2E2 cm(sup -2) and N(sub a)N(sub d) of about 3E18 cm (sup -3). In addition, our preliminary investigation of p(sup +)n structures seem to suggest that Cd-doped emitter cells are more radiation resistant than Zn-doped emitter cells against both high energy electron and proton irradiation.

Faur, Mircea↗

NASA NTRS1994

High-efficiency, deep-junction, epitaxial InP solar cells on (100) and (111)B InP substrates

We report on the development and performance of deep-junction (approximately 0.25 micron), graded-emitter-doped, n(sup +)-p InP solar cells grown by metallorganic chemical vapor deposition (MOCVD). A novel, diffusion-transport process for obtaining lightly-doped p-type base regions of the solar cell is described. The I-V data and external quantum-efficiency response of these cells are presented. The best active-area AMO efficiency for these deep-junction cells on (100)-oriented InP substrates is 16.8 percent, with a J(sub SC) of 31.8 mA/sq cm, a V(sub OC) of 0.843 V, and a fill-factor of 0.85. By comparison, the best cell efficiency on the (111)B-oriented InP substrates was 15.0 percent. These efficiency values for deep-junction cells are encouraging and compare favorably with performance of thin-emitter (0.03 micron) epitaxial cells as well as that of deep-emitter diffused cells. The cell performance and breakdown voltage characteristics of a batch of 20 cells on each of the orientations are presented, indicating the superior breakdown voltage properties and other characteristics of InP cells on the (111)B orientation. Spectral response, dark I-V data, and photoluminescence (PL) measurements on the InP cells are presented with an analysis on the variation in J(sub SC) and V(sub OC) of the cells. It is observed, under open-circuit conditions, that lower-V(sub OC) cells exhibit higher band-edge PL intensity for both the (100) and (111)B orientations. This anomalous behavior suggests that radiative recombination in the heavily-doped n(sup +)-InP emitter may be detrimental to achieving higher V(sub OC) in n(sup +)-p InP solar cells.

Venkatasubramanian, R.↗

NASA NTRS1994

Thermal-infrared remote sensing and Kirchhoff's Law. 1: Laboratory measurements

By the end of this century the Earth Observing System (EOS) will provide worldwide, thermal infrared, multispectral images of the Earth, presenting geologists with a new kind of remote sensing data for interpretation. Thus it has become essential to understand the spectral emittance behavior of terrestrial surface materials. Perhaps the most fundamental question to be answereed is the extent to which such materials follow Kirchhoff's law (epsilon = 1 -R) under laboratory and field conditions, especially when a sample displays a thermal gradient. We present the first rigorous quantitative comparison of directional and hemispherical reflectance and directional emittance of rock and soil samples in the laboratory, with thermal gradients induced by heating them from below and allowing them to radiate to a colder background. The results show that only an extemeley low density sample composed of fine particles sifted into a 'fairy castle' structure displays a thermal gradient steep enough within the infrared skin depth to cause significant (6%) departure from Kirchhoff's law. There is no detectable effect on the more normal terrestrial samples, such as soils and rocks measured in the laboratory, even when semitransparent coatings are involved. Thus both emittance and reflectance measurements can be used to calculate sample emissivity for most terrestrial surface materieals. However, the effect on Kirchhoffian behavior of different field environments, which may induce a steeper thermal gradient in particulate samples, has yet to be determined, and some low-density surface materials like newly fallen snow, frost, and efflorescent salts on playas have yet to be measured in emittance.

Salisbury, John W.↗

NASA NTRS1997

Electrical and Optical Performance Characteristics of 0.74-eV p/n InGaAs Monolithic Interconnected Modules

There has been a traditional trade-off in thermophotovoltaic (TPV) energy conversion development between system efficiency and power density. This trade-off originates from the use of front surface spectral controls such as selective emitters and various types of filters. A monolithic interconnected module (MIM) structure has been developed which allows for both high power densities and high system efficiencies. The MIM device consists of many individual indium gallium arsenide (InGaAs) cells series-connected on a single semi-insulating indium phosphide (InP) substrate. The MIM is exposed to the entire emitter output, thereby maximizing output power density. An infrared (IR) reflector placed on the rear surface of the substrate returns the unused portion of the emitter output spectrum back to the emitter for recycling, thereby providing for high system efficiencies. Initial MIM development has focused on a 1 sq cm device consisting of eight (8) series interconnected cells. MIM devices, produced from 0.74-eV InGaAs, have demonstrated V(sub oc) = 3.2 volts, J(sub sc) = 70 mA/sq cm, and a fill factor of 66% under flashlamp testing. Infrared (IR) reflectance measurements (greater than 2 micron) of these devices indicate a reflectivity of greater than 82%. MIM devices produced from 0.55-eV InGaAs have also been demonstrated. In addition, conventional p/n InGaAs devices with record efficiencies (11.7% AM0) have been demonstrated.

Wilt, David M.↗

NASA NTRS1997

Electrical and Optical Performance Characteristics of p/n InGaAs Monolithic Interconnected Modules

There has been a traditional trade-off in ThermoPhotoVoltaic (TPV) energy conversion development between system efficiency and power density. This trade-off originates from the use of front surface spectral controls such as selective emitters and various types of filters. A Monolithic Interconnected Module (MIM) structure has been developed which allows for both high power densities and high system efficiencies. The MIM device consists of many individual Indium Gallium Arsenide (InGaAs) devices series-connected on a single semi-insulating Indium Phosphide (InP) substrate. The MIMs are exposed to the entire emitter output, thereby maximizing output power density. An InfraRed (IR) reflector placed on the rear surface of the substrate returns the unused portion of the emitter output spectrum back to the emitter for recycling, thereby providing for high system efficiencies. Initial MIM development has focused on a 1 sq cm device consisting of eight (8) series interconnected cells. MIM devices, produced from 0.74eV InGaAs, have demonstrated V(sub infinity) = 3.2 volts, J(sub sc) = 70 mA/sq cm and a fill factor of 66% under flashlamp testing. IR reflectance measurements (greater than 2 microns) of these devices indicate a reflectivity of greater than 82%. MIM devices produced from 0.55 eV InGaAs have also been demonstrated. In addition, conventional p/n InGaAs devices with record efficiencies (11.7% AM0) have been demonstrated.

Wilt, David M.↗

NASA NTRS1998

Thermophotovoltaic Energy Conversion Development Program

Completely integrated thermophotovoltaic (TPV) power sources in the range of 100 to 500 watts are being developed. The technical approach taken in this project focuses on optimizing the integrated performance of the primary subsystems in order to yield high energy conversion efficiency and cost effectiveness. An important aspect of the approach is the use of a narrow band fibrous emitter radiating to a bandgap matched photovoltaic array to minimize thermal and optical recuperation requirements, as well as the non-recoverable heat losses. For the prototype system, fibrous ytterbia emitters radiating in a narrow band centered at 980 nm are matched with high efficiency silicon photoconverters. The integrated system includes a dielectric stack filter for optical energy recovery and a ceramic recuperator for thermal energy recovery. The prototype TPV system uses a rapid mix distributed fuel delivery system with controlled feeding of the fuel and heated air into a flame at the surface of the emitter. This makes it possible to operate at air preheat temperatures well above the auto-ignition temperature of the fuel thereby substantially increasing the system efficiency. The system has been operated with air preheat temperatures up to 1367 K and has produced a uniform narrow band radiation over the surface of the emitter with this approach. The design of the system is described and test data for the system and some of the key components are presented. The results from a system model, which show the impact of various parameters on system performance, are also discussed.

Shukla, Kailash↗

NASA NTRS2001

Long-Term Reliability of SiGe/Si HBTs From Accelerated Lifetime Testing

Accelerated lifetime tests were performed on double-mesa structure Si(0.7)Ge(0.3)/Si npn heterojunction bipolar transistors, grown by molecular beam epitaxy, in the temperature range of 175 C-275 C. The transistors (with 5x20 sq micron emitter area) have DC current gains approx. 40-50 and f(sub T) and f(sub max) of up to 22 GHz and 25 GHz, respectively. It is found that a gradual degradation in these devices is caused by the recombination enhanced impurity diffusion (REID) of boron atoms from the p-type base region and the associated formation of parasitic energy barriers to electron transport from the emitter to collector layers. This REED has been quantitatively modeled and explained, to the first order of approximation, and the agreement with the measured data is good. The mean time to failure (MTTF) of these devices at room temperature under 1.35 x 10(exp 4) A/sq cm current density operation is estimated from the extrapolation of the Arrhenius plots of device lifetime versus reciprocal temperature. The results of the reliability tests offer valuable feedback for SiGe heterostructure design in order to improve the long-term reliability of the devices and circuits made with them. Hot electron induced degradation of the base-emitter junction was also observed during the accelerated lifetime testing. In order to improve the HBT reliability endangered by the hot electrons, deuterium sintered techniques have been proposed. The preliminary results from this study show that a deuterium-sintered HBT is, indeed, more resistant to hot-electron induced base-emitter junction degradation.

Bhattacharya, Pallab↗

NASA NTRS2004

InGaAs/InP Monolithic Interconnected Modules (MIM) for Thermophotovoltaic Applications

There has been a traditional trade-off in thermophotovoltaic (TPV) energy conversion development between systems efficiency and power density. This trade-off originates from the use of front surface spectral controls such as selective emitters and various types of filters. A monolithic interconnected module (MIM) structure has been developed which allows for both high power densities and high system efficiencies. The MIM device consists of many individual indium gallium arsenide (InGaAs) devices series -connected on a single semi-insulating indium phosphide (InP) substrate. The MIMs are exposed to the entire emitter output, thereby maximizing output power density. An infrared (IR) reflector placed on the rear surface of the substrate returns the unused portion of the emitter output spectrum back to the emitter for recycling, thereby providing for high system efficiencies. Initial MIM development has focused on a 1 sq cm device consisting of eight series interconnected cells. MIM devices, produced from 0,74 eV InGAAs, have demonstrated V(sub infinity) = 3.23 volts, J(sub sc) = 70 mA/sq cm and a fill factor of 66% under flashlamp testing. Infrared (IR) reflectance measurement (less than 2 microns) of these devices indicate a reflectivity of less than 82%. MIM devices produced from 0.55 eV InGaAs have also been den=monstrated. In addition, conventional p/n InGaAs devices with record efficiencies (11.7% AM1) have been demonstrated.

Wilt, David M.↗

NASA NTRS2004

Mars Radiator Characterization Experimental Program

Radiators are an enabling technology for the human exploration and development of the moon and Mars. As standard components of the heat rejection subsystem of space vehicles, radiators are used to reject waste heat to space and/or a planetary environment. They are typically large components of the thermal control system for a space vehicle or human habitation facility, and in some cases safety factors are used to oversize them when the operating environment cannot be fully characterized. Over-sizing can impose significant weight and size penalties that might be prohibitive for future missions. Radiator performance depends on the size of the radiator surface, its emittance and absorptance, the radiator temperature, the effective sky temperature surrounding the radiator, solar radiation and atmospheric irradiation levels, convection to or from the atmosphere (on Mars), and other conditions that could affect the nature of the radiator surface, such as dust accumulation. Most particularly, dust is expected to be a major contributor to the local environmental conditions on either the lunar or Martian surface. This conclusion regarding Mars is supported by measurements of dust accumulation on the Mars Sojourner Rover solar array during the Pathfinder mission. This Final Report describes a study of the effect of Martian dust accumulation on radiator performance. It is comprised of quantitative measurements of effective emittance for a range of dust accumulation levels on surfaces of known emittance under clean conditions. The test radiator coatings were Z-93P, NS-43G, and Silver Teflon (10 mil) film. The Martian dust simulant was Carbondale Red Clay. Results were obtained under vacuum conditions sufficient to reduce convection effects virtually to zero. The experiments required the development of a calorimetric apparatus that allows simultaneous measurements of the effective emittance for all the coatings at each set of experimental conditions. A method of adding dust to multiple radiator coupons was developed and shown to be capable of depositing dust on the surfaces with acceptable uniformity. In these experiments, the dust layer accumulates under earth gravity and in the presence of an earth atmosphere. An invention disclosure for the dust deposition apparatus is being filed through NASA and University of Houston.

Witte, Larry C.↗

NASA NTRS1995

Chemical Vapor-Deposited (CVD) Diamond Films for Electronic Applications

Diamond films have a variety of useful applications as electron emitters in devices such as magnetrons, electron multipliers, displays, and sensors. Secondary electron emission is the effect in which electrons are emitted from the near surface of a material because of energetic incident electrons. The total secondary yield coefficient, which is the ratio of the number of secondary electrons to the number of incident electrons, generally ranges from 2 to 4 for most materials used in such applications. It was discovered recently at the NASA Lewis Research Center that chemical vapor-deposited (CVD) diamond films have very high secondary electron yields, particularly when they are coated with thin layers of CsI. For CsI-coated diamond films, the total secondary yield coefficient can exceed 60. In addition, diamond films exhibit field emission at fields orders of magnitude lower than for existing state-of-the-art emitters. Present state-of-the-art microfabricated field emitters generally require applied fields above 5x10^7 V/cm. Research on field emission from CVD diamond and high-pressure, high-temperature diamond has shown that field emission can be obtained at fields as low as 2x10^4 V/cm. It has also been shown that thin layers of metals, such as gold, and of alkali halides, such as CsI, can significantly increase field emission and stability. Emitters with nanometer-scale lithography will be able to obtain high-current densities with voltages on the order of only 10 to 15 V.

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