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At least 469 records · Page 26

Design of a multichannel photonic crystal dielectric laser accelerator

To be useful for most scientific and medical applications, compact particle accelerators will require much higher average current than enabled by current architectures. For this purpose, we propose a photonic crystal architecture for a dielectric laser accelerator, referred to as a multi-input multi-output silicon accelerator (MIMOSA), that enables simultaneous acceleration of multiple electron beams, increasing the total electron throughput by at least 1 order of magnitude. To achieve this, we show that the photonic crystal must support a mode at the Γ point in reciprocal space, with a normalized frequency equal to the normalized speed of the phase-matched electron. We show that the figure of merit of the MIMOSA can be inferred from the eigenmodes of the corresponding infinitely periodic structure, which provides a powerful approach to design such devices. Additionally, we extend the MIMOSA architecture to electron deflectors and other electron manipulation functionalities. These additional functionalities, combined with the increased electron throughput of these devices, permit all-optical on-chip manipulation of electron beams in a fully integrated architecture compatible with current fabrication technologies, which opens the way to unconventional electron beam shaping, imaging, and radiation generation.

43 PARTICLE ACCELERATORS↗

CEBAF Injector for K Long Beam Conditions

The Continuous Electron Beam Accelerator Facility (CEBAF) at Jefferson Lab concurrently operates four experimental Halls with distinct bunch charge specifications and repetition rates. Numerous critical beam parameters within CEBAF are configured in the injector, some remaining unchanged throughout the accelerator. Consequently, the injector plays a crucial role in determining final beam characteristics, including bunch structure, beam sizes, bunch lengths, energy spread, and beam transmission. The Jefferson Lab KL experiment is scheduled to take place at CEBAF in Hall D, featuring a much lower bunch repetition rate of 7.80 MHz or 15.59 MHz, below the nominal values of 249.5 MHz or 499 MHz. Although the proposed average current of 5 ?A or 10 ?A is low compared to the maximum CEBAF cur- rent of approximately 180 ?A, the corresponding bunch charge is unusually high for CEBAF injector operation. This study focuses on the behavior of low-repetition-rate, high-bunch- charge (0.32 to 0.64 pC) beams in the CEBAF injector. We investigated the evolution and transmission of low-charge beams to space-charge dominated high-charge beams in the front end of the CEBAF injector for two configurations: the pre-existing CEBAF Phase 1 injector upgrade, operated at 130 kV, and the existing CEBAF Phase 2 injector upgrade, operated at 140 kV, 180 kV, and to be operated at 200 kV. The electron beam through the CEBAF injector is characterized using beam dynamics simulations and comparisons with the available measurements performed at 130 kV. Multi-objective genetic optimizations of the CEBAF injector were performed to determine the operating magnetic elements and RF settings for the evolution and transmission of low, moderate, and high charge beams in the CEBAF injector at 180 kV and 200 kV DC gun voltages. Subsequently, simulations at the same voltages were conducted to obtain the beam characteristics at the front end of the CEBAF injector. The laser spot size and laser pulse length at the cathode were varied to observe their effects on beam transmission in the injector at different voltages (130 kV, 180 kV, and 200 kV). Experimental studies at 130 kV, 140 kV, and 180 kV validate the simulations. Beam study measurements are carried out using EPICS tools, while optimizations and simulations are facilitated by General Particle Tracer. Based on the findings, optimal parameters for the upcoming Jefferson Lab KL experiment are proposed, utilizing a lower repetition rate and higher bunch charge

Pokharel, Sunil↗

High precision 5 MeV Mott polarimeter

We report on the design and performance of a Mott polarimeter optimized for a nominal 5-MeV electron beam from the Continuous Electron Beam Accelerator Facility (CEBAF) injector. The rf time structure of this beam allows the use of time of flight in the scattered electron detection, making it possible to cleanly isolate those detected electrons that originate from the scattering foil, and resulting in measured scattering asymmetries which are exceptionally stable over a broad range of beam conditions, beam currents, and foil thicknesses. In two separate series of measurements from two different photocathode electron sources, we have measured the Mott scattering asymmetries produced by an approximately 86% transversely polarized electron beam incident on ten gold foils with nominal thicknesses between 50 and 1000 nm. The statistical uncertainty of the measured asymmetry from each foil is below 0.25%. Within this statistical precision, the measured asymmetry was unaffected by ±1-mm shifts in the beam position on the target foil, and by beam current changes and dead-time effects over a wide range of beam currents. The overall uncertainty of our beam polarization measurement, arising from the uncertainty in the value of the scattering asymmetry at zero foil thickness as determined from our fits to the measured asymmetries versus scattering foil thicknesses, the estimated systematic effects, and the (dominant) uncertainty from the calculation of the theoretical Sherman function, is 0.61%. A simulation of the polarimeter using geant4 has confirmed that double scattering in the target foil is the sole source of the dependence of the measured asymmetry on foil thickness, and gives a result for the asymmetry versus foil thickness in good agreement with both our measurements and a simple calculation. Future measurements at different beam energies and with target foils of different atomic numbers will seek to bound uncertainties from small effects such as radiative corrections to the calculation of the polarimeter analyzing power. A simultaneous high-precision measurement of the beam polarization with a different polarimeter, AESOP (Accurate Electron Spin Optical Polarimeter), under development at the University of Nebraska, clearly possible at the CEBAF accelerator, will allow a high-precision comparison of our measured asymmetries with theoretical calculations of the Mott analyzing power. Finally, the improved precision of the current Mott polarimeter along with similar improvements to other Jefferson Lab polarimeters warrants another precision comparison of all of these polarimeters when measuring a beam of the same polarization.

Grames, J. M. (ORCID:0000000193908752)↗

Water purification system

A method and system for water purification includes a particle accelerator configured to generate a particle beam and a conduit configured to be substantially in line with the particle beam wherein said electron beam is incident on a fluid flowing through the conduit. The electron beam can be oriented to be substantially head on to the direction of flow of the fluid in the conduit. A shielding assembly can be configured around the conduit. A cartridge filtering system and contaminant filtering system can be provided to remove additional contaminants.

Geelhoed, Michael↗

Electron Beam-Induced Phase Transformations in Different Crystal Orientations of a 2D van der Waals Magnet

To control materials properties at the nanoscale, the well-focused electron beam of the scanning transmission electron microscope (STEM) can be used as a tool to engineer structure with atomic precision. For 2D magnets, especially the highly anisotropic materials AgCrP2S6 and CrSBr, we find here that the STEM serves as a powerful tool for sculpting the arrangement of atoms, with the potential to modulate local magnetic properties.

Park, Eugene [Massachusetts Inst. of Technology (M↗

Controllable X-ray Pulse Trains from Enhanced Self-Amplified Spontaneous Emission

We report the demonstration of optical compression of an electron beam and the production of controllable trains of femtosecond, soft x-ray pulses with the Linac Coherent Light Source (LCLS) freeelectron laser (FEL). This is achieved by enhanced self-amplified spontaneous emission with a 2 μm laser and a dechirper device. Optical compression was achieved by modulating the energy of an electron beam with the laser and then compressing with a chicane, resulting in high current spikes on the beam which we observe to lase. A dechirper was then used to selectively control the lasing region of the electron beam. Field autocorrelation measurements indicate a train of pulses, and we find that the number of pulses within the train can be controlled (from 1 to 5 pulses) by varying the dechirper position and undulator taper. These results are a step toward attosecond spectroscopy with x-ray FELs as well as future FEL schemes relying on optical compression of an electron beam.

Duris, Joseph P↗

4D-STEM of Beam-Sensitive Materials

We report that a scanning electron nanobeam diffraction, or 4D-STEM (four-dimensional scanning transmission electron microscopy), is a flexible and powerful approach to elucidate structure from "soft" materials that are challenging to image in the transmission electron microscope because their structure is easily damaged by the electron beam. In a 4D-STEM experiment, a converged electron beam is scanned across the sample, and a pixelated camera records a diffraction pattern at each scan position. This four-dimensional data set can be mined for various analyses, producing maps of local crystal orientation, structural distortions, crystallinity, or different structural classes. Holding the sample at cryogenic temperatures minimizes diffusion of radicals and the resulting damage and disorder caused by the electron beam. The total fluence of incident electrons can easily be controlled during 4D-STEM experiments by careful use of the beam blanker, steering of the localized electron dose, and by minimizing the fluence in the convergent beam thus minimizing beam damage. This technique can be applied to both organic and inorganic materials that are known to be beam-sensitive; they can be highly crystalline, semicrystalline, mixed phase, or amorphous. One common example is the case for many organic materials that have a π-π stacking of polymer chains or rings on the order of 3.4-4.2 Å separation. If these chains or rings are aligned in some regions, they will produce distinct diffraction spots (as would other crystalline spacings in this range), though they may be weak or diffuse for disordered or weakly scattering materials. We can reconstruct the orientation of the π-π stacking, the degree of π-π stacking in the sample, and the domain size of the aligned regions. This Account summarizes illumination conditions and experimental parameters for 4D-STEM experiments with the goal of producing images of structural features for materials that are beam-sensitive. We will discuss experimental parameters including sample cooling, probe size and shape, fluence, and cameras. 4D-STEM has been applied to a variety of materials, not only as an advanced technique for model systems, but as a technique for the beginning microscopist to answer materials science questions. It is noteworthy that the experimental data acquisition does not require an aberration-corrected TEM but can be produced on a variety of instruments with the right attention to experimental parameters.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Polarized electron injector for positron production at CEBAF

As a part of the effort to expand the capabilities of CE-BAF 12 GeV (Continuous Electron Beam Accelerator Facility) at Jefferson Lab, the addition of a polarized positron source is considered. This capability would provide acceleration of high duty-cycle polarized posi-trons, with spin >60% polarization, through the same main CEBAF accelerator machine with appropriate mag-net field reversals and linac phasing to the four CEBAF experimental halls. To produce this positron beam, a high average current (3-10 mA) highly polarized electron beam with energy of 100 ? 150 MeV is required at the positron source target. The focus of this paper is the de-sign of that polarized electron beam injector. We will describe the production and delivery of a >3 mA highly polarized electron beam. We will discuss different aspects of the design, the photocathode gun, beam dynamics simulation results, spin manipulation, bunching and accelerating process and final electron beam parameters.

Kazimi, R.↗

Liquid metal-based polarized positron generation benchmark using the GEANT4 toolkit

In this work, we report simulation results for the positron yield and polarization of polarized electron beams incident on GaInSn and PbBi liquid metal targets. One of the proposed upgrades to 12 GeV CEBAF is the use of a continuous wave polarized positron beam for physics experiments. High-Z liquid metal jets are excellent candidates for positron production targets because they can withstand high power beams. Polarized positron beams can be generated from a primary electron beam incident to thick high-Z targets through circular polarized bremsstrahlung conversion to linearly polarized pair production. This polarization transfer from the primary electron beam has been previously demonstrated at Jefferson Lab in the PEPPo experiment with a tungsten target at relatively low energies. Here we report Geant4 simulations for 10 and 120 MeV electron beams incident on GaInSn and PbBi liquid metal targets. These simulations are compared to simulations with a solid tungsten target, as well as with unpolarized simulations using MCNP6.

Lizarraga-Rubio, Victor Manuel↗

Selected Area Manipulation of MoS 2 via Focused Electron Beam-Induced Etching for Nanoscale Device Editing

Here we demonstrate direct-write patterning of single and multilayer MoS 2 via a focused electron beam-induced etching (FEBIE) process mediated with the XeF 2 precursor. MoS 2 etching is performed at various currents, areal doses, on different substrates, and characterized using scanning electron and atomic force microscopies as well as Raman and photoluminescence spectroscopies. Scanning transmission electron microscopy reveals a sub-40 nm etching resolution and the progression of point defects and lateral etching of the consequent unsaturated bonds. The results confirm that the electron beam-induced etching process is minimally invasive to the underlying material in comparison to ion beam techniques, which damage the subsurface material. Single-layer MoS 2 field-effect transistors are fabricated, and device characteristics are compared for channels that are edited via the selected area etching process. The source–drain current at constant gate and source–drain voltage scale linearly with the edited channel width. Moreover, the mobility of the narrowest channel width decreases, suggesting that backscattered and secondary electrons collaterally affect the periphery of the removed area. Focused electron beam doses on single-layer transistors below the etching threshold were also explored as a means to modify/thin the channel layer. The FEBIE exposures showed demonstrative effects via the transistor transfer characteristics, photoluminescence spectroscopy, and Raman spectroscopy. While strategies to minimize backscattered and secondary electron interactions outside of the scanned regions require further investigation, here, we show that FEBIE is a viable approach for selective nanoscale editing of MoS 2 devices.

36 MATERIALS SCIENCE↗

Atom-by-Atom Direct Writing

Direct-write processes enable the alteration or deposition of materials in a continuous, directable, sequential fashion. Here, in this work, we demonstrate an electron beam direct-write process in an aberration-corrected scanning transmission electron microscope. This process has several fundamental differences from conventional electron-beam-induced deposition techniques, where the electron beam dissociates precursor gases into chemically reactive products that bond to a substrate. Here, we use elemental tin (Sn) as a precursor and employ a different mechanism to facilitate deposition. The atomic-sized electron beam is used to generate chemically reactive point defects at desired locations in a graphene substrate. Temperature control of the sample is used to enable the precursor atoms to migrate across the surface and bond to the defect sites, thereby enabling atom-by-atom direct writing.

36 MATERIALS SCIENCE↗

Enabling the Acquisition of Electron Beam-Induced Current (EBIC) Images in Conventional SEM and STEM Instruments

Electron beam-induced current (EBIC) imaging is a well-established scanning electron microscope (SEM) technique used to analyze the behavior of microelectronic devices including solar cells. Recently, the application of EBIC imaging in an aberration-corrected scanning transmission electron microscope (STEM) has been demonstrated and offers great potential for the in situ study of electronic materials, correlating charge transport properties to atomic structural and elemental information. Here, this work presents two ways to implement EBIC imaging in conventional SEM and STEM systems: one relying on the instrument's inherent scanning and imaging electronics and the other involving third-party systems usually available in electron microscopes. The implementation of lock-in EBIC in systems equipped with a fast beam blanker is also described. In addition, this work shows and discusses the different mechanisms at play in EBIC imaging and their dependence on beam energy, sample impedance, and electrical measurement configuration, providing researchers with the basic information needed to apply the technique to their research.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Generation of ultrahigh-brightness pre-bunched beams from a plasma cathode for X-ray free-electron lasers

The longitudinal coherence of X-ray free-electron lasers (XFELs) in the self-amplified spontaneous emission regime could be substantially improved if the high brightness electron beam could be pre-bunched on the radiated wavelength-scale. Here, we show that it is indeed possible to realize such current modulated electron beam at angstrom scale by exciting a nonlinear wake across a periodically modulated plasma-density downramp/plasma cathode. The density modulation turns on and off the injection of electrons in the wake while downramp provides a unique longitudinal mapping between the electrons’ initial injection positions and their final trapped positions inside the wake. The combined use of a downramp and periodic modulation of micrometers is shown to be able to produces a train of high peak current (17 kA) electron bunches with a modulation wavelength of 10’s of angstroms - orders of magnitude shorter than the plasma density modulation. The peak brightness of the nano-bunched beam can be $\textit{O}$(10 21 A/m 2 /rad 2 ) orders of magnitude higher than current XFEL beams. Such prebunched, high brightness electron beams hold the promise for compact and lower cost XEFLs that can produce nanometer radiation with hundreds of GW power in a 10s of centimeter long undulator.

47 OTHER INSTRUMENTATION↗

Incoherent Dynamics of Intense Proton Beams under Electron Cooling

The minimum emittance of ion beams achieved using electron cooling is limited by the heating processes of Intra Beam Scattering and diffusion driven by resonance crossing of particles due to space-charge. We describe a new experiment to explore the intense space-charge regime with a transverse tune shift approaching -0.5 using 2.5~MeV protons at the Integrable Optics Test Accelerator (IOTA) at Fermilab. We also report on the results from PyORBIT simulations incorporating transverse space-charge and electron cooling with emphasis on the incoherent dynamics of the particles.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Incoherent Dynamics of Intense Proton Beams Under Electron Cooling

The minimum emittance of ion beams achieved using electron cooling is limited by the heating processes of Intra Beam Scattering and diffusion driven by resonance crossing of particles due to space-charge. We describe a new experiment to explore the intense space-charge regime with a transverse tune shift approaching -0.5 using 2.5 MeV protons at the Integrable Optics Test Accelerator (IOTA) at Fermilab. We also report on the results from PyORBIT simulations incorporating transverse space-charge and electron cooling with emphasis on the incoherent dynamics of the particles.

43 PARTICLE ACCELERATORS↗

Improved Electrostatic Design of the Jefferson Lab 300 kV DC Photogun and the Minimization of Beam Deflection

An electron beam with high bunch charge and high repetition rate is required for electron cooling of the ion beam to achieve the high luminosity required for the proposed electron-ion colliders. An improved design of the 300 kV DC high voltage photogun at Jefferson Lab was incorporated toward overcoming the beam loss and space charge current limitation experienced in the original design. To reach the bunch charge goal of ~ few nC within 75 ps bunches, the existing DC high voltage photogun electrodes and anode-cathode gap were modified to increase the longitudinal electric field (Ez) at the photocathode. The anode-cathode gap was reduced to increase the Ez at the photocathode, and the anode aperture was spatially shifted with respect to the beamline longitudinal axis to minimize the beam deflection introduced by the geometric asymmetry of the inverted insulator photogun. The electrostatic design and beam dynamics simulations were performed to determine the required modification. Beam-based measurement from the modified gun confirmed the reduction of the beam deflection, which is presented in this contribution.

Mamun, M. A.↗

HIGH VOLTAGE DESIGN AND EVALUATION OF WIEN FILTERS FOR THE CEBAF 200 keV INJECTOR UPGRADE

High-energy nuclear physics experiments at the Jefferson Lab Continuous Electron Beam Accelerator Facility (CEBAF) require highly spin-polarization electron beams, produced from strained super-lattice GaAs photocathodes, activated to negative electron affinity in a photogun operating at 130 kV dc. A pair of Wien filter spin rotators in the injector defines the orientation of the electron beam polarization at the end station target. An upgrade of the CEBAF injector to better support the upcoming MOLLER experiment requires increasing the electron beam energy to 200 keV, to reduce unwanted helicity correlated intensity and position systematics and provide precise control of the polarization orientation. Our contribution describes design, fabrication and testing of the high voltage system to upgrade the Wien spin rotator to be compatible with the 200 keV beam. This required Solidworks modeling, CST and Opera electro- and magnetostatic simulations, upgrading HV vacuum feedthroughs, and assembly techniques for improving electrode alignment. The electric and magnetic fields required by the Wien condition and the successful HV characterization under vacuum conditions are also presented.

Palacios-Serrano, G.↗

Electrostatic Design and Characterization of a 200 keV Photogun and Wien Spin Rotator

High-energy nuclear physics experiments at the Jefferson Lab Continuous Electron Beam Accelerator Facility (CEBAF) require high spin-polarization electron beams produced from strained super-lattice GaAs photocathodes activated to negative electron affinity in a high voltage photogun operating at 130 kV dc. A pair of Wien filter spin rotators in the injector provides precise control of the electron beam polarization at the end station target. An upgrade of the CEBAF injector to better support the upcoming Moller experiment requires increasing the electron beam energy to 200 keV, resulting in better transmission through injector apertures and improved photocathode lifetime. In addition, the energy increase is expected to reduce unwanted helicity correlated intensity and position systematics. These requirements led to the design of a shielding electrode described in this work, which minimizes the electric field at the triple-point junction and linearizes the potential along the insulator, thus reducing the risk of field emission induced insulator arcing. The Wien spin rotator design was modified for increasing the electric field from 1.6 to 2.7 MV/m and the magnetic field from 9.1 to 13 mT. The upgrades required detailed modeling in Solidworks, electrostatic simulations using CST, beam dynamics using GPT, device implementation, and in situ high voltage characterization of the world?s first 200 keV polarized photoelectron gun and compatible Wien filter spin rotator.

Palacios-Serrano, Gabriel↗