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Cyclotron tests to determine response of solid state detectors to protons of energies 50 to 160 mev for use in proton spectrometer
Fast x-ray detectors are critical tools in pulsed power and fusion applications, where detector impulse response of a nanosecond or better is often required. Semiconductor detectors can create fast, sensitive devices with extensive operational flexibility. There is typically a trade-off between detector sensitivity and speed, but higher atomic number absorbers can increase hard x-ray absorption without increasing the charge collection time, provided carriers achieve high velocity. This paper presents x-ray pulse characterization conducted at the Advanced Photon Source of x-ray absorption efficiency and temporal impulse response of current-mode semiconductor x-ray detectors composed of Si, GaAs, and CdTe.
The electric charge distribution and response time of a modulation-doped extrinsic infrared detector are determined. First, it is demonstrated theoretically that the photoconductive layer is effectively depleted of ionized majority-impurity charges so that scattering is small and mobility is high for photogenerated carriers. Then, using parameters appropriate to an actual detector, the predicted response time is 10 to the -8th to about 10 to the -9th s, which is much faster than comparable conventional detectors. Thus, the modulation-doped detector design would be valuable for heterodyne applications.
Thin film thermal radiation detector noting construction, calibration, performance, error sources and advantages of pyroelectric over thin film gauges
Thin film thermal radiation detector noting construction, calibration, performance, error sources and advantages of pyroelectric over thin film gauges
Conversion gain is a fundamental parameter in detector characteristics that is used to measure many identifying detector properties, including read noise, dark current, and quantum efficiency (QE). Charge coupling effects, such as inter-pixel capacitance, attenuate photon shot noise and result in an overestimation of of conversion gain when implementing the photon transfer technique. The (55)Fe X-ray technique is a direct and simple method by which to measure the conversion gain by comparing the observed instrumental counts (ADU) to the known charge (e-) liberated by a single X-ray photon. Here we present the calibrated pair production energy for 1.7 micron HgCdTe infrared detectors.
A technique involving Fe-55 X-rays provides a straightforward method to measure the response of a detector. The detector's response can lead directly to a calculation of the conversion gain (e(-) ADU(-1) ), as well as aid detector design and performance studies. We calibrate the Fe-15 X-ray energy response and pair production energy of HgCdTe using 8 HST WFC3 1.7 micron flight grade detectors. The results show that each Ka X-ray generates 2273 +/- 137 electrons, which corresponds to a pair-production energy of 2.61 +/- 0.16 eV. The uncertainties are dominated by our knowledge of the conversion gain. In future studies, we plan to eliminate this uncertainty by directly measuring conversion gain at very low light levels.
One of the critical challenges for large area cadmium zinc telluride (CdZnTe) detector arrays is obtaining material capable of uniform imaging and spectroscopic response. Two complementary nondestructive techniques for characterizing bulk CdZnTe have been developed to identify material with a uniform response. The first technique, infrared transmission imaging, allows for rapid visualization of bulk defects. The second technique, x-ray spectral mapping, provides a map of the material spectroscopic response when it is configured as a planar detector. The two techniques have been used to develop a correlation between bulk defect type and detector performance. The correlation allows for the use of infrared imaging to rapidly develop wafer mining maps. The mining of material free of detrimental defects has the potential to dramatically increase the yield and quality of large area CdZnTe detector arrays.
Important NASA Earth Observing System (EOS) missions, Atmospheric Infrared Sounder (AIRS) and Moderate Resolution Imaging Spectrometer (MODIS-N), which require detector spectral response in the range of 14 to 17 microns at medium background flux levels and operation in the range of temperatures between 65 to 95 K, will be flown beginning in the next few years. Currently, a prime candidate detector technology for these missions is trapping-mode photoconductive HgCdTe devices. These devices can be tailored to the exact cutoff wavelengths required by those missions, and thus offer the performance advantages of an intrinsic detector which is ideally matched to the mission wavelength. Under the long wavelength-background-temperature conditions of these EOS missions, any detector will at best be thermal generation-recombination noise limited. Photoconductive devices are generally preferred under these circumstances, since at elevated temperatures their performance degrades with n(sub i) while for photovoltaic detectors performance degrades as n sub i(exp 2) n sub i is the intrinsic carrier concentration which is a function of alloy composition and temperature, but not doping. Very high performance trapping-mode photoconductive HgCdTe detectors have been developed which can be reproducibly fabricated. Detectivity (D asterisk) at 80K and 16 micron cutoff wavelength in excess of 10(exp 11) Jones has been measured for these devices. Power dissipation is at least two orders of magnitude less than conventional HgCdTe photoconductors - on the order of 0.12 W/cm(exp 2) compared with 12 W/cm(exp 2). EOS missions define thermal noise limited conditions for the long wavelength operating bands. Trapping-mode photoconductive HgCdTe detectors are linear under such conditions and responsivity is independent of background flux. At lower temperatures or high flux conditions in which background flux limits detector performance, trapping-mode detectors have a responsivity which varies with background flux. Internal calibration must be provided for radiometric measurements under the latter conditions (not an EOS mission concern). Liquid phase epitaxy is used to grow these HgCdTe device structures. This technique has been shown to give control of the cutoff wavelength on the order of 16 plus or minus 1 micron or less, both from run to run and across wafer dimensions of several centimeters on a side.
The background response of a gas ionizing proportional x ray detector is estimated by solving the one dimensional photon transport equation for two regions using Monte Carlo techniques. The solution was effected using the SSL VAX 780 and the CRAY XMP computers at Marshall Space Flight Center. The isotropic photon energy spectrum encompassing the range from 1 to 1000 KeV incident onto the first region, the shield, is taken so as to represent the measured spectrum at an altitude of 3 mb over Palastine, Texas. The differential energy spectrum deposited in the gas region, xenon, over the range of 0 to 100 KeV is written to an output file. In addition, the photon flux emerging from the shield region, tin, over the range of 1 to 1000 KeV is also tabulated and written to a separate file. Published tabular cross sections for photoelectric, elastic and inelastic Compton scattering as well as the total absorption coefficient are used. Histories of each incident photon as well as secondary photons from Compton and photoelectric interactions are followed until the photon either is absorbed or exits from the regions under consideration. The effect of shielding thickness upon the energy spectrum deposited in the xenon region for this background spectrum incident upon the tin shield was studied.
A primary limitation of many solid-state photodetectors used in electro-optical systems such as the facsimile camera is their slow response in converting light intensities into electrical signals. An optical feedback technique is presented which can extend the frequency response of systems that use these detectors by orders of magnitude without significantly degrading their signal-to-noise performance. This technique is analyzed to predict improvement, implemented, and evaluated to verify analytical results.
Helium-4-based scintillation detector technology is emerging as a strong alternative to pulse-shape discrimination-capable organic scintillators for fast neutron detection and spectroscopy, particularly in extreme gamma-ray environments. The 4 He detector is intrinsically insensitive to gamma radiation, as it has a relatively low cross-section for gamma-ray interactions, and the stopping power of electrons in the 4 He medium is low compared to that of 4 He recoil nuclei. Consequently, gamma rays can be discriminated by simple energy deposition thresholding instead of the more complex pulse shape analysis. The energy resolution of 4 He scintillation detectors has not yet been well-characterized over a broad range of energy depositions, which limits the ability to deconvolve the source spectra. In this work, an experiment was performed to characterize the response of an Arktis S670 4 He detector to nuclear recoils up to 9 MeV. The 4 He detector was positioned in the center of a semicircular array of organic scintillation detectors operated in coincidence. Deuterium–deuterium and deuterium–tritium neutron generators provided monoenergetic neutrons, yielding geometrically constrained nuclear recoils ranging from 0.0925 to 8.87 MeV. The detector response provides evidence for scintillation linearity beyond the previously reported energy range. Finally, the measured response was used to develop an energy resolution function applicable to this energy range for use in high-fidelity detector simulations needed by future applications.
An alpha particle densitometer was developed for possible application to measurement of the atmospheric density-altitude profile on Martian entry. The device uses an Am-241 radioactive-foil source, which emits a distributed energy spectrum, located about 25 to 75 cm from a semiconductor detector. System response - defined as the number of alphas per second reaching the detector with energy above a fixed threshold - is given for Ar and CO2. The altitude profile of density measurement accuracy is given for a pure CO2 atmosphere with 5 mb surface pressure. The entire unit, including dc-dc converters, requires less than 350 milliwatts of power from +28 volts, weighs about 0.85 lb and occupies less than 15 cubic inches volume.
Integrated circuit performs 1,024 threshold operations in parallel. Designed for use in postprocessing output of optical correlator in optoelectronic neural network. Overall function of device to put out digital signals indicative of location(s) of bright spot(s) on detector plane. Response time less than commercial charge-coupled-device (CCD) imaging detector operating at standard television frame rate.
Photomultiplier geometry without use of light pipes for uniform response from large area single and double sheet plastic scintillation detectors
In this paper, the design, fabrication, and characterization of an actively tunable long-wave infrared detector, made possible through direct integration of a graphene-enabled metasurface with a conventional type-II superlattice infrared detector, are reported. This structure allows for post-fabrication tuning of the detector spectral response through voltage-induced modification of the carrier density within graphene and, therefore, its plasmonic response. These changes modify the transmittance through the metasurface, which is fabricated monolithically atop the detector, allowing for spectral control of light reaching the detector. Importantly, this structure provides a fabrication-controlled alignment of the metasurface filter to the detector pixel and is entirely solid-state. Using single pixel devices, relative changes in the spectral response exceeding 8% have been realized. These proof-of-concept devices present a path toward solid-state hyperspectral imaging with independent pixel-to-pixel spectral control through a voltage-actuated dynamic response.
A failure detector which detects the failure of a dc to ac inverter is disclosed. The inverter under failureless conditions is characterized by a known linear relationship of its input and output voltages and by a known linear relationship of its input and output currents. The detector includes circuitry which is responsive to the detector's input and output voltages and which provides a failure-indicating signal only when the monitored output voltage is less by a selected factor, than the expected output voltage for the monitored input voltage, based on the known voltages' relationship. Similarly, the detector includes circuitry which is responsive to the input and output currents and provides a failure-indicating signal only when the input current exceeds by a selected factor the expected input current for the monitored output current based on the known currents' relationship.
Measurements of the UV-B erythemal dose, based on solar spectra acquired with a Brewer spectrophotometer at Thessaloniki, Greece, are compared to measurements performed with the recently introduced, by the Yankee Environmental Systems, (Robertson type) broad band solar UV-B detector. The spectral response function of this detector, when applied to the Brewer spectral UV-B measurements, results in remarkably comparable estimates of the erythemal UV-B dose. The two instruments provide similar information on the UV-B dose when they are cross-examined under a variety of meteorological and atmospheric conditions and over the a large range of solar zenith angles and total ozone.