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At least 469 records · Page 26

A cooler Penning trap for the TITAN mass measurement facility

The TITAN facility at TRIUMF makes use of highly charged ions, charge-bred in an electron beam ion trap, to carry out accurate mass measurements on radioactive isotopes. We report on our progress to develop a cooler Penning trap, CPET, which aims at reducing the energy spread of the ions to ≈ 1 eV/charge prior to injection into the mass measurement trap. In off-line mode, we can now trap electron plasmas for minutes, and we observe the damping of the m = 1 diocotron plasma mode within ≈ 2 s.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Interfacial trap states and improvement of low-temperature mobility by doping in InSb/AlInSb quantum wells

The effect of doping on InSb/Al{sub 0.1}In{sub 0.9}Sb quantum wells (QWs) was investigated, and it was found that doping improves the electron mobility at low temperatures and leads to a weaker dependence of the resistivity with temperature. The dependence of the carrier density on the well width revealed trap states at the interfaces of the QW whose sheet density per interface was estimated to be about 4 × 10{sup 10 }cm{sup −2}. The low mobility of undoped InSb QWs, in particular, at low temperature seems to have been caused by positively ionized impurity scattering at the interfacial trap states. Doping compensates for the trap states and enhances mobility by suppressing ionized impurity scattering. Thus, intentional doping is necessary for developing high-mobility InSb QW devices. The origin of the trap states is qualitatively discussed.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Interchange mode excited by trapped energetic ions

The kinetic energy principle describing the interaction between ideal magnetohydrodynamic (MHD) modes with trapped energetic ions is revised. A model is proposed on the basis of the reduced ideal MHD equations for background plasmas and the bounce-averaged drift-kinetic equation for trapped energetic ions. The model is applicable to large-aspect-ratio toroidal devices. Specifically, the effect of trapped energetic ions on the interchange mode in helical systems is analyzed. Results show that the interchange mode is excited by trapped energetic ions, even if the equilibrium states are stable to the ideal interchange mode. The energetic-ion-induced branch of the interchange mode might be associated with the fishbone mode in helical systems.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Impact of residual carbon impurities and gallium vacancies on trapping effects in AlGaN/GaN metal insulator semiconductor high electron mobility transistors

Effects of residual C impurities and Ga vacancies on the dynamic instabilities of AlN/AlGaN/GaN metal insulator semiconductor high electron mobility transistors are investigated. Secondary ion mass spectroscopy, positron annihilation spectroscopy, and steady state and time-resolved photoluminescence (PL) measurements have been performed in conjunction with electrical characterization and current transient analyses. The correlation between yellow luminescence (YL), C- and Ga vacancy concentrations is investigated. Time-resolved PL indicating the C{sub N} O{sub N} complex as the main source of the YL, while Ga vacancies or related complexes with C seem not to play a major role. The device dynamic performance is found to be significantly dependent on the C concentration close to the channel of the transistor. Additionally, the magnitude of the YL is found to be in agreement with the threshold voltage shift and with the on-resistance degradation. Trap analysis of the GaN buffer shows an apparent activation energy of ∼0.8 eV for all samples, pointing to a common dominating trapping process and that the growth parameters affect solely the density of trap centres. It is inferred that the trapping process is likely to be directly related to C based defects.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Collisionless microtearing modes in hot tokamaks: Effect of trapped electrons

Collisionless microtearing modes have recently been found linearly unstable in sharp temperature gradient regions of large aspect ratio tokamaks. The magnetic drift resonance of passing electrons has been found to be sufficient to destabilise these modes above a threshold plasma β. A global gyrokinetic study, including both passing electrons as well as trapped electrons, shows that the non-adiabatic contribution of the trapped electrons provides a resonant destabilization, especially at large toroidal mode numbers, for a given aspect ratio. The global 2D mode structures show important changes to the destabilising electrostatic potential. The β threshold for the onset of the instability is found to be generally downshifted by the inclusion of trapped electrons. A scan in the aspect ratio of the tokamak configuration, from medium to large but finite values, clearly indicates a significant destabilizing contribution from trapped electrons at small aspect ratio, with a diminishing role at larger aspect ratios.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

An improved model to estimate trapping parameters in polymeric materials and its application on normal and aged low-density polyethylenes

Trapping parameters can be considered as one of the important attributes to describe polymeric materials. In the present paper, a more accurate charge dynamics model has been developed, which takes account of charge dynamics in both volts-on and off stage into simulation. By fitting with measured charge data with the highest R-square value, trapping parameters together with injection barrier of both normal and aged low-density polyethylene samples were estimated using the improved model. The results show that, after long-term ageing process, the injection barriers of both electrons and holes is lowered, overall trap depth is shallower, and trap density becomes much greater. Additionally, the changes in parameters for electrons are more sensitive than those of holes after ageing.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

F-state quenching with CH{sub 4} for buffer-gas cooled {sup 171}Y b{sup +} frequency standard

We report that methane, CH{sub 4}, can be used as an efficient F-state quenching gas for trapped ytterbium ions. The quenching rate coefficient is measured to be (2.8 ± 0.3) × 10{sup 6} s{sup −1} Torr{sup −1}. For applications that use microwave hyperfine transitions of the ground-state {sup 171}Y b ions, the CH{sub 4} induced frequency shift coefficient and the decoherence rate coefficient are measured as δν/ν = (−3.6 ± 0.1) × 10{sup −6} Torr{sup −1} and 1/T{sub 2} = (1.5 ± 0.2) × 10{sup 5} s{sup −1} Torr{sup −1}. In our buffer-gas cooled {sup 171}Y b{sup +} microwave clock system, we find that only ≤10{sup −8} Torr of CH{sub 4} is required under normal operating conditions to efficiently clear the F-state and maintain ≥85% of trapped ions in the ground state with insignificant pressure shift and collisional decoherence of the clock resonance.

74 ATOMIC AND MOLECULAR PHYSICS↗

Active stabilization of ion trap radiofrequency potentials

We actively stabilize the harmonic oscillation frequency of a laser-cooled atomic ion confined in a radiofrequency (rf) Paul trap by sampling and rectifying the high voltage rf applied to the trap electrodes. We are able to stabilize the 1 MHz atomic oscillation frequency to be better than 10 Hz or 10 ppm. This represents a suppression of ambient noise on the rf circuit by 34 dB. This technique could impact the sensitivity of ion trap mass spectrometry and the fidelity of quantum operations in ion trap quantum information applications.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Electrostatic equilibria of non-neutral plasmas confined in a Penning trap with axially varying magnetic field

A procedure for computing the electrostatic equilibria of non-neutral plasmas in a Penning trap with a nonuniform magnetic field by solving Poisson's equation using an iterative method is described. Plasma equilibria in a model Penning trap with high and low field regions are computed. The plasma is assumed to follow the Boltzmann density distribution along magnetic field lines. Correspondence with previous investigations examining similar configurations analytically and using particle-in-cell simulations is found. The relationship between the plasma density in low and high field regions is examined for various plasma temperatures, densities, magnetic mirror ratios, and plasma and electrode radii. An analytical description of the radial density profile in the high field region is developed and compared with the computed equilibria. A concept is described for cooling a positron plasma with laser-cooled ions trapped axially within a high magnetic field region, while antiprotons are trapped axially separated from the laser-cooled ions within a low field region, and the positron plasma extends to both regions.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Studying single-electron traps in newly fabricated Skipper-CCDs for the Oscura experiment using the pocket-pumping technique

Understanding and characterizing very low-energy (⁠ ∼eV) background sources is a must in rare-event searches. Oscura, an experiment aiming to probe electron recoils from sub-GeV dark matter using a 10 kg skipper-CCD detector, has recently fabricated its first two batches of sensors. In this work, we present the characterization of defects/contaminants identified in the buried-channel region of these newly fabricated skipper-CCDs. These defects/contaminants produce deferred charge from trap emission in the images next to particle tracks, which can be spatially resolved due to the sub-electron resolution achieved with these sensors. Using the trap-pumping technique, we measured the energy and cross section associated with these traps in three Oscura prototype sensors from different fabrication batches which underwent different gettering methods during fabrication. Results suggest that the type of defects/contaminants is more closely linked to the fabrication batch rather than to the gettering method used. The exposure-dependent single-electron rate (SER) of one of these sensors was measured ∼100 m underground, yielding (1.8±0.3)×10−3e−/pix/day at 131 K. The impact of the identified traps on the measured exposure-dependent SER is evaluated via a Monte Carlo simulation. Results suggest that the exposure-dependent SER of Oscura prototype sensors would be lower in lower background environments as expected.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

van der Waals-corrected density functional study of electric field noise heating in ion traps caused by electrode surface adsorbates

Abstract In order to realize the full potential of ion trap quantum computers, an improved understanding is required of the motional heating that trapped ions experience. Experimental studies of the temperature-, frequency-, and ion–electrode distance-dependence of the electric field noise responsible for motional heating, as well as the noise before and after ion bombardment cleaning of trap electrodes, suggest that fluctuations of adsorbate dipoles are a likely source of so-called ‘anomalous heating,’ or motional heating of the trapped ions at a rate much higher than the Johnson noise limit. Previous computational studies have investigated how the fluctuation of model adsorbate dipoles affects anomalous heating. However, the way in which specific adsorbates affect the electric field noise has not yet been examined, and an electric dipole model employed in previous studies is only accurate for a small subset of possible adsorbates. Here, we analyze the behavior of both in-plane and out-of-plane vibrational modes of twenty-one adsorbate–electrode combinations within the independent fluctuating dipole model, utilizing accurate first principles computational methods to determine the surface-induced dipole moments. We find the chemical specificity of the adsorbate can change the electric field noise by seven orders of magnitude and specifically that soft in-plane modes of weakly-adsorbed hydrocarbons produce the greatest noise and ion heating. We discuss the dynamics captured by the fluctuating dipole model, namely the adsorbate-dependent turn-on temperature and electric field noise magnitude, and also discuss the model’s failure to reproduce the measured 1/ ω noise frequency scaling with a single adsorbate species. We suggest future research directions for improved, quantitatively predictive models based on extensions of the present framework to multiple interacting adsorbates.

74 ATOMIC AND MOLECULAR PHYSICS↗

First Penning trap mass measurement of 36 Ca

Background: Isobaric quintets provide the best test of the isobaric multiplet mass equation (IMME) and can uniquely identify higher order corrections suggestive of isospin symmetry breaking effects in the nuclear Hamilto nian. The Generalized IMME (GIMME) is a novel microscopic interaction theory that predicts an extension to the quadratic form of the IMME. Only the A = 20, 32 T = 2 quintets have the exotic T z = –2 member ground state mass determined to high-precision by Penning trap mass spectrometry. Purpose: To establish A = 36 as the third high-precision T = 2 isobaric quintet with the T z = –2 member ground state mass measured by Penning trap mass spectrometry and provide the first test of the predictive power of the GIMME. Method: Here, a radioactive beam of neutron-deficient 36 Ca was produced by projectile fragmentation at the National Superconducting Cyclotron Laboratory. The beam was thermalized and the mass of 36 Ca + and 36 Ca 2+ measured by the Time of Flight - Ion Cyclotron Resonance method in the LEBIT 9.4 T Penning trap. Results: We measure the mass excess of 36 Ca to be ME= –6483.6(56) keV, an improvement in precision by a factor of 6 over the literature value. The new datum is considered together with evaluated nuclear data on the A = 36, T = 2 quintet. We find agreement with the quadratic form of the IMME given by isospin symmetry, but only coarse qualitative agreement with predictions of the GIMME. Conclusion: A total of three isobaric quintets have their most exotic members measured by Penning trap mass spectrometry. The GIMME predictions in the T = 2 quintet appear to break down for A = 32 and greater.

20 ≤ A ≤ 38↗

Tellurium Secondary-Phase Defects in CdZnTe and their Association With the 1.1-eV Deep Trap

Defects located at the EC - 1.1 (eV) level, which are electro-optically active deep traps, generally have been overlooked since their presence cannot be detected except for those in highly resistive CdTe compounds. The origin of this trap is still debated on whether it is from Te vacancies or from dislocations induced by secondary phase defects in Te. We have grown high-resistivity Te-rich CZT ingots to clarify the origin of the 1.1 eV defects and to analyze the defect levels in the CZT samples by current deep level transient spectroscopy (I-DLTS)and photoluminescence (PL). From the analysis, defect levels such as shallow acceptor/donor, A-centers, Cd vacancies and Te antisite appeared to be in both high and low concentrations of Te inclusions, but the level of 1.1-eV defects exhibited dependence on the density of Te inclusion in the CZT samples. We also evaluated the effect of the 1.1-eV deep-level defects on the detector's performance in point view of carrier trapping and de-trapping.

36 MATERIALS SCIENCE↗

Machine learning to classify animal species in camera trap images: Applications in ecology

Motion-activated cameras (“camera traps”) are increasingly used in ecological and management studies for remotely observing wildlife and are amongst the most powerful tools for wildlife research. However, studies involving camera traps result in millions of images that need to be analysed, typically by visually observing each image, in order to extract data that can be used in ecological analyses. We trained machine learning models using convolutional neural networks with the ResNet-18 architecture and 3,367,383 images to automatically classify wildlife species from camera trap images obtained from five states across the United States. We tested our model on an independent subset of images not seen during training from the United States and on an out-of-sample (or “out-of-distribution” in the machine learning literature) dataset of ungulate images from Canada. We also tested the ability of our model to distinguish empty images from those with animals in another out-of-sample dataset from Tanzania, containing a faunal community that was novel to the model. The trained model classified approximately 2,000 images per minute on a laptop computer with 16 gigabytes of RAM. The trained model achieved 98% accuracy at identifying species in the United States, the highest accuracy of such a model to date. Out-of-sample validation from Canada achieved 82% accuracy and correctly identified 94% of images containing an animal in the dataset from Tanzania. We provide an r package (Machine Learning for Wildlife Image Classification) that allows the users to (a) use the trained model presented here and (b) train their own model using classified images of wildlife from their studies. The use of machine learning to rapidly and accurately classify wildlife in camera trap images can facilitate non-invasive sampling designs in ecological studies by reducing the burden of manually analysing images. Our r package makes these methods accessible to ecologists.

54 ENVIRONMENTAL SCIENCES↗

Dynamics of a Diatomic Molecule in a Trap

The dynamics of a diatomic molecule possessing translational, rotational, and vibrational degrees of freedom in a trap has been analyzed theoretically and numerically. The interaction of atoms in the molecule is described by the Lennard-Jones potential, while the interaction of atoms with the trap walls is described by an exponential potential of repulsion. The motion of a molecule away from the trap walls can be reduced to the classical two-body problem with the central interaction and is regular. It has been established that an intense interaction of atoms of the molecule with the trap walls leads to stochastization of motion.

74 ATOMIC AND MOLECULAR PHYSICS↗

Modeling of radiation-induced charge trapping in MOS devices under ionizing irradiation

The numerical model of the radiation-induced charge trapping process in the oxide layer of a MOS device under ionizing irradiation is developed; the model includes carrier transport, hole capture by traps in different states, recombination of free electrons and trapped holes, kinetics of hydrogen ions which can be accumulated in the material during transistor manufacture, and accumulation and charging of interface states. Modeling of n-channel MOSFET behavior under 1 MeV photon irradiation is performed. The obtained dose dependences of the threshold voltage shift and its contributions from trapped holes and interface states are in good agreement with experimental data.

74 ATOMIC AND MOLECULAR PHYSICS↗

Nonstationary model of an axisymmetric mirror trap with nonequilibrium plasma

The DOL nonstationary model intended to describe plasma processes in axisymmetric magnetic mirror traps is considered. The model uses averaging over the bounce period in order to take into account the dependence of plasma parameters on the coordinate along the facility axis. Examples of calculations of trap parameters by means of the DOL code based on this model are presented. Among the features of the DOL model, one can single out two points: first, the capability of calculating the terms of the collision integral with the use of a non-Maxwellian scattering function while evaluating the distribution function of fast ions and, second, concerning the background plasma, the capability of calculating the longitudinal particle and energy fluxes in confinement modes with the particle mean free path being on the order of the trap length. The influence of the scattering function approximation used to calculate the collision integral on the solution to the kinetic equation is analyzed. The dependences of plasma parameters on the power of heating injectors and the length of the fast-ion turning zone are presented as calculation examples. The longitudinal profile of the fusion reaction rate in the case of a trap with a long fast-ion turning zone is shown to depend strongly on the input parameters of the model.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Influence of traps in silicon dioxide on the breakdown of MOS structures

A model for numerical calculation of the voltage and delay time of the breakdown of MOS structures based on the anode-hole-injection mechanism, which takes into account the depth distributions of hole and electron traps in the dielectric layer, is developed. It is shown that the breakdown voltage is determined by charge accumulation at hole traps in the gate dielectric near the cathode and depends also on the presence of hole traps near the anode and electron traps. The calculated breakdown delay time follows the exponential law 1/E in a wide range of field strengths and is in agreement with the experimental data. At short impact times (t < 10{sup –5} s), breakdown is determined by charge accumulation at free holes.

36 MATERIALS SCIENCE↗