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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 469 records · Page 26
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Note: Cryogenic heat switch with stepper motor actuator

A mechanical cryogenic heat switch has been developed using a commercially available stepper motor and control electronics. The motor requires 4 leads, each carrying a maximum, pulsed current of 0.5 A. With slight modifications of the stepper motor, the switch functions reliably in vacuum at temperatures between 300 K and 4 K. The switch generates a clamping force of 262 N at room temperature. At 4 K it achieves an “on state” thermal conductance of 5.04 mW/K and no conductance in the “off state.” The switch is optimized for cycling an adiabatic demagnetization refrigerator.

42 ENGINEERING↗
DOE OSTI2016

Design and investigation of a multichannel laser-triggered vacuum switch

A laser-triggered vacuum switch (LTVS) is an advanced closing switch with nanosecond delay and jitter. In order to enhance hold-off voltage and extend the service lifetime of an LTVS, we designed a multichannel laser-triggered vacuum switch (MLTVS) utilizing a cone-shaped target electrode placed on the cathode platform. The fabrication and testing of the MLTVS is described in this paper. Experimental results show that the working voltage of the MLTVS with a gap distance of 12 mm is from 30 V to 20 kV. The threshold energy for triggering the switch is 0.4 mJ corresponding to a peak power density of 27.9 MW/cm{sup 2}. The triggering lifetime of a spot can reach up to 18 000 shots. In addition, the relationship between triggering lifetime and target materials is analyzed using a field emission scanning electron microscope. A hypothesis of the vacuum gap’s triggering mechanism is discussed based on the measured results.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2016

Lateral excitonic switching in vertically stacked quantum dots

We show that the application of a vertical electric field to the Coulomb interacting system in stacked quantum dots leads to a 90° in-plane switching of charge probability distribution in contrast to a single dot, where no such switching exists. Results are obtained using path integral quantum Monte Carlo with realistic dot geometry, alloy composition, and piezo-electric potential profiles. The origin of the switching lies in the strain interactions between the stacked dots hence the need for more than one layer of dots. The lateral polarization and electric field dependence of the radiative lifetimes of the excitonic switch are also discussed.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Examination of the temperature dependent electronic behavior of GeTe for switching applications

The DC and RF electronic behaviors of GeTe-based phase change material switches as a function of temperature, from 25 K to 375 K, have been examined. In its polycrystalline (ON) state, GeTe behaved as a degenerate p-type semiconductor, exhibiting metal-like temperature dependence in the DC regime. This was consistent with the polycrystalline (ON) state RF performance of the switch, which exhibited low resistance S-parameter characteristics. In its amorphous (OFF) state, the GeTe presented significantly greater DC resistance that varied considerably with bias and temperature. At low biases (<1 V) and temperatures (<200 K), the amorphous GeTe low-field resistance dramatically increased, resulting in exceptionally high amorphous-polycrystalline (OFF-ON) resistance ratios, exceeding 10{sup 9} at cryogenic temperatures. At higher biases and temperatures, the amorphous GeTe exhibited nonlinear current-voltage characteristics that were best fit by a space-charge limited conduction model that incorporates the effect of a defect band. The observed conduction behavior suggests the presence of two regions of localized traps within the bandgap of the amorphous GeTe, located at approximately 0.26–0.27 eV and 0.56–0.57 eV from the valence band. Unlike the polycrystalline state, the high resistance DC behavior of amorphous GeTe does not translate to the RF switch performance; instead, a parasitic capacitance associated with the RF switch geometry dominates OFF state RF transmission.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Experimental investigation on the effect of plasma jet in the triggered discharge process of a gas switch

The temporal and spatial evolution of a plasma jet generated by a spark discharge was observed. The electron temperature and density were obtained under different time and gas pressures by optical emission spectroscopy. Moreover, the discharge process of the plasma-jet triggered gas switch was recorded and analyzed at the lowest working coefficient. The results showed that the plasma jet moved forward in a bullet mode, and the advancing velocity increased with the decrease of pressure, and decreased with time growing. At initial time, the maximum velocity of a plasma jet could reach 3.68 × 10{sup 6 }cm/s. The electron temperature decreased from 2.0 eV to 1.3 eV, and the electron density increased from 3.1 × 10{sup 15}/cm{sup 3} to 6.3 × 10{sup 15}/cm{sup 3} at the initial moment as the gas pressure increases from 0.1 MPa to 0.32 MPa. For a two-gap gas switch, the discharge performances were more depended on the second discharge spark gap (gap 2). Because plasma jet promoted the discharge in Gap 2, the gas switch operating in mode II had better triggered discharge characteristics. In the discharge process, the plasma-jet triggering had the effect of non-penetrating inducing, which not only provided initial electrons for reducing statistical lag but also enhanced the local electric field. The discharge was initiated and accelerated from electron avalanche to streamer. Therefore, a fast discharge was occurred in the gas switch.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2016

Pseudo-spark switch (PSS) characteristics under different operation conditions

The present paper concentrates on the characteristics of the pseudospark switch (PSS) designed in a previous work. The special characteristics of PSS make it a replacement for other high voltage switches such as thyratrons and ordinary high-pressure spark gaps. PSS is characterized by short rise time and small jitter time. The pseudo park chamber consists of two hollow cylindrical electrodes made of a stainless steel material (type 306L) separated by an insulator. The insulator used in our design is a glazed ceramic 70 mm in diameter and 3.5 mm in thickness. A PSS with an anode voltage of 29.2 kV, and a current of 3.6 kA and 11 ns rise time was achieved and used successfully at a repetition rate of about 2.2 kHz. A simple trigger circuit designed, built, and used effectively reaching more than 1.56 kV trigger pulse which is sufficient to ignite the argon gas inside the cathode to cause a breakdown. A non-inductive dummy load is designed to be a new technique to find the accurate value of the PSS inductance. A jitter time of ±10 ns pulses is observed to occur in a reliable manner for more than 6 h of continuous operation. In this research, the important parameters of this switch like rise time, peak current, and anode voltage were studied at various values of charging capacitance. The lifetime of this system is depending on the kind of the electrode material and on the type of insulation material in the main gap of the pseudospark switch.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

A conserved molecular logic for neurogenesis to gliogenesis switch in the cerebral cortex

During development, neural stem cells in the cerebral cortex, also known as radial glial cells (RGCs), generate excitatory neurons, followed by production of cortical macroglia and inhibitory neurons that migrate to the olfactory bulb (OB). Understanding the mechanisms for this lineage switch is fundamental for unraveling how proper numbers of diverse neuronal and glial cell types are controlled. We and others recently showed that Sonic Hedgehog (Shh) signaling promotes the cortical RGC lineage switch to generate cortical oligodendrocytes and OB interneurons. During this process, cortical RGCs generate intermediate progenitor cells that express critical gliogenesis genes Ascl1, Egfr, and Olig2. The increased Ascl1 expression and appearance of Egfr + and Olig2 + cortical progenitors are concurrent with the switch from excitatory neurogenesis to gliogenesis and OB interneuron neurogenesis in the cortex. While Shh signaling promotes Olig2 expression in the developing spinal cord, the exact mechanism for this transcriptional regulation is not known. Furthermore, the transcriptional regulation of Olig2 and Egfr has not been explored. Here, we show that in cortical progenitor cells, multiple regulatory programs, including Pax6 and Gli3, prevent precocious expression of Olig2, a gene essential for production of cortical oligodendrocytes and astrocytes. We identify multiple enhancers that control Olig2 expression in cortical progenitors and show that the mechanisms for regulating Olig2 expression are conserved between the mouse and human. Our study reveals evolutionarily conserved regulatory logic controlling the lineage switch of cortical neural stem cells.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2019

Real-time studies of ferroelectric domain switching: a review

Ferroelectric materials have been utilized in a broad range of electronic, optical, and electromechanical applications and hold the promise for the design of future high-density nonvolatile memories and multifunctional nano-devices. The applications of ferroelectric materials stem from the ability to switch polarized domains by applying an electric field, and therefore a fundamental understanding of the switching dynamics is critical for design of practical devices. In this review, we summarize the progress in the study of the microscopic process of ferroelectric domain switching using recently developed in situ transmission electron microscopy (TEM). We first briefly introduce the instrumentation, experimental procedures, imaging mechanisms, and analytical methods of the state-of-the-art in situ TEM techniques. The application of these techniques to studying a wide range of complex switching phenomena, including domain nucleation, domain wall motion, domain relaxation, domain-defect interaction, and the interplay between different types of domains, is demonstrated. The underlying physics of these dynamic processes are discussed.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Reduced Switching Frequency Finite Control Set Model Predictive Control (FCS-MPC) for DFIG

An enhanced Finite Control Set Model Predictive Control (FCS-MPC) strategy with a two-step prediction horizon for a Doubly-Fed Induction Generator (DFIG) is the focus of this paper. The DFIG and RL filter's discrete-time model is used in the proposed control scheme for a two-step prediction horizon of rotor and filter currents for the converter's eight possible switching states. Afterward, the control algorithm selects the ideal switching state, which minimizes currents' objective function. The proposed control scheme does not require a modulation stage for internal controllers. We use Lagrange extrapolations to predict the dynamic changes in currents. The switching frequency reduction is achieved by integrating an optimization constraint in the algorithm's cost function. Furthermore, the Total Harmonic Distortion level of currents is kept below 5%, according to IEEE Std 519-14. Obtained results reveal that the switching frequency of the DFIG converters is considerably reduced without losing control; it is reduced by 13.89KHz for the Grid Side Converter (GSC) and by 1.78KHz for the Rotor Side Converter (RSC).

doubly-fed induction generator↗
DOE OSTI2019

Active Cancellation of Vibration in Switched Reluctance Motor Using Mechanical Impulse Response Method

Vibration and acoustic noise are considered as major factors preventing the widespread use of switched reluctance motor (SRM) drives in industrial and commercial applications. In this paper, a new active vibration cancellation (AVC) strategy is proposed based on the optimal switching instants. The mechanical impulse response method was used to estimate the stator vibration and an optimization routine was developed to define the optimal instants for switching in such a way that the resulting vibration would cancel the vibration caused by prior switchings. Finally, experimental verification was conducted on an 8/6 SRM and the results show significant reduction in the stator vibration which in turn contributes to reduction of acoustic noise.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2017

Temperature-Dependent Characterization, Modeling, and Switching Speed-Limitation Analysis of Third-Generation 10-kV SiC MOSFET

The temperature-dependent characteristics of the third-generation 10-kV/20-A SiC MOSFET including the static characteristics and switching performance are carried out in this paper. The steady-state characteristics, including saturation current, output characteristics, antiparallel diode, and parasitic capacitance, are tested. Here, a double pulse test platform is constructed including a circuit breaker and gate drive with >10-kV insulation and also a hotplate under the device under test for temperature-dependent characterization during switching transients. The switching performance is tested under various load currents and gate resistances at a 7-kV dc-link voltage from 25 to 125 C and compared with previous 10-kV MOSFETs. A simple behavioral model with its parameter extraction method is proposed to predict the temperature-dependent characteristics of the 10-kV SiC MOSFET. The switching speed limitations, including the reverse recovery of SiC MOSFET's body diode, overvoltage caused by stray inductance, crosstalk, heat sink, and electromagnetic interference to the control are discussed based on simulations and experimental results.

10-kV silicon carbide (SiC) metal–oxide–semiconduc↗
DOE OSTI2024

Output Capacitance Loss of GaN HEMTs in Steady-State Switching

The output capacitance (C OSS ) loss, a loss produced when the device’s output capacitor is charged and discharged, has become a concern for GaN high electron mobility transistors (HEMTs) in high-frequency applications. This work presents a new, easy-to-implement method for the C OSS loss characterization based on the unclamped inductive switching (UIS) setup. As compared to prior approaches, this method involves the device’s ON-state conduction and could measure the C OSS loss in a single pulse and the steady-state switching. The C OSS loss of three types of mainstream commercial GaN HEMTs is characterized, which exhibit some common dependencies including a non-monotonic relation with the dv/dt (or resonance frequency), a linear relation with the ON-state current, a power-law relation with the peak blocking voltage, and little temperature dependence. In addition, their C OSS losses all show minimal distinctions in a single pulse and the steady-state switching, despite the increased on-resistance in the steady-state switching. Furthermore, this suggests that the traps accounting for the C OSS loss possess different de-trapping time constants as compared to the traps governing the dynamic on-resistance. Finally, a unified model is established to describe the C OSS loss of all three types of GaN HEMTs. These results provide important references for the high-frequency application of GaN HEMTs and new insights into the physical origin of their C OSS loss.1

42 ENGINEERING↗
DOE OSTI2023

Origin of Soft-Switching Output Capacitance Loss in Cascode GaN HEMTs at High Frequencies

Output capacitance (C OSS ) loss (E DISS ) is produced when the C OSS of a power device is charged and discharged, which ideally should be a lossless process. This loss was recently revealed to be a crucial concern for GaN high electron mobility transistors (HEMTs) in high-frequency soft-switching applications. Among various GaN devices, the composite-type, cascode GaN HEMT was reported to show the largest E DISS with a voltage dependence distinct from discrete GaN HEMTs. However, the physical origins of the EDISS in cascode GaN HEMTs remain unclear. This work fills this gap by identifying three loss components and, for the first time, experimentally quantifying them in the multi-MHz resonant switching. These loss components include a) the avalanche loss of Si MOSFET, b) the intrinsic E DISS of GaN HEMT, and c) the Si avalanche-induced GaN turn-ON loss. The last component was found to dominate E DISS at high voltage. By eliminating the Si avalanche and the associated loss components (a) and (c), the E DISS of cascode GaN HEMTs can be reduced by up to 75% at the price of an increase in output charge and switching transition time. Furthermore, these results provide new physical insights and practical guidelines to trim the soft-switching loss of cascode GaN HEMTs in high-frequency applications.

42 ENGINEERING↗
DOE OSTI2019

Atomic-Force Microscopy of Resistive Nonstationary Signal Switching in ZrO{sub 2}(Y) Films

Local resistive switching by complex nonstationary signals in zirconium-dioxide-stabilized films on conducting substrates has been studied by atomic-force microscopy with a conducting probe. Film resistance was switched by triangular voltage pulses on which a high-frequency sinusoidal signal was superimposed. It is found that the ratio of currents through the junction between the probe and film surface in high-resistance and low-resistance states increases after the superposition of a sinusoidal signal (as compared to switching by simple triangular pulses). An increase in the temporal stability of the current strength in these states was also found when switching with a sinusoidal signal. This effect is associated with resonant activation of oxygen ion migration over vacancies in an external ac electric field.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Understanding all-optical spin switching: Comparison between experiment and theory

We report that information technology depends on how one can control and manipulate signals accurately and quickly. Transistors are at the core of modern technology and are based on electron charges. But as the device dimension shrinks, heating becomes a major problem. The spintronics explores the spin degree of electrons and thus bypasses the heat, at least in principle. For this reason, spin-based technology offers a possible solution. In this review, we survey some of the latest developments in all-optical switching (AOS), where ultrafast laser pulses are able to reverse spins from one direction to the other deterministically. But AOS only occurs in a special group of magnetic samples and within a narrow window of laser parameters. Some samples need multiple pulses to switch spins, while others need a single-shot pulse. To this end, there are several models available, but the underlying mechanism is still under debate. This review is different from other prior reviews in two aspects. First, we sacrifice the completeness of reviewing existing studies, while focusing on a limited set of experimental results that are highly reproducible in different labs and provide actual switched magnetic domain images. Second, we extract the common features from existing experiments that are critical to AOS, without favoring a particular switching mechanism. We emphasize that given the limited experimental data, it is really premature to identify a unified mechanism. Lastly, we compare these features with our own model prediction, without resorting to a phenomenological scheme. We hope that this review serves the broad readership well.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Electrochemical and Chemical Insertion for Energy Transformation and Switching

Insertion is a widely utilized process for reversibly changing the stoichiometry of a solid through a chemical or electrochemical stimulus. Insertion is instrumental to many energy technologies, including batteries, fuel cells, and hydrogen storage, and has been the subject of extensive investigations. More recently, solid-state switching devices utilizing insertion have drawn significant interest; such devices dynamically switch a material's chemical stoichiometry, changing it from one state to another. This paper illustrates the fundamental properties and mechanisms of insertion, including reaction, diffusion, and phase transformation, and discusses recent developments in characterization in these fields. Finally, we also review new classes of recently demonstrated insertion devices, which reversibly switch mechanical and electronic properties, and show how the fundamental mechanisms of insertion can be used to design improved switching devices.

25 ENERGY STORAGE↗
NASA NTRS2011

High Frequency PIN-Diode Switches for Radiometer Applications

Internally calibrated radiometers are needed for ocean topography and other missions. Typically internal calibration is achieved with Dicke switching as one of the techniques. We have developed high frequency single-pole double-throw (SPDT) switches in the form of monolithic microwave integrated circuits (MMIC) that can be easily integrated into Dicke switched radiometers that utilize microstrip technology. In particular, the switches we developed can be used for a radiometer such as the one proposed for the Surface Water and Ocean Topography (SWOT) Satellite Mission whose three channels at 92, 130, and 166 GHz would allow for wet-tropospheric path delay correction near coastal zones and over land. This feat is not possible with the current Jason-class radiometers due to their lower frequency signal measurement and thus lower resolution. The MMIC chips were fabricated at NGST using their InP PIN diode process and measured at JPL using high frequency test equipment. Measurement and simulation results will be presented.

PIN-diode↗
NASA NTRS2014

Heat Switches for ADRs

Heat switches are key elements in the cyclic operation of Adiabatic Demagnetization Refrigerators (ADRs). Several of the types of heat switches that have been used for ADRs are described in this paper. Key elements in selection and design of these switches include not only ON/OFF switching ratio, but also method of actuation, size, weight, and structural soundness. Some of the trade-off are detailed in this paper.

adiabatic demagnetization refrigerator↗