Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “SiO2”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 469 records · Page 26

Atomic oxygen effects on candidate coatings for long-term spacecraft in low earth orbit

Candidate atomic oxygen protective coatings for long-term low Earth orbit (LEO) spacecraft were evaluated using the Los Alamos National Laboratory O-atom exposure facility. The coatings studied include Teflon, Al2O3, SiO2, and SWS-V-10, a silicon material. Preliminary results indicate that sputtered PTFE Teflon (0.1 micrometers) has a fluence lifetime of 10 to the 19th power O-atoms/cm (2), and sputtered silicon dioxide (0.1 micrometers), aluminum oxide (0.1 micrometers), and SWS-V-10, a silicone, (4 micrometers) have fluence lifetimes of 10 to the 20th power to 10 to the 21st power O-atoms/cm (2). There are large variations in fluence lifetime data for these coatings.

Lan, E. H.↗

Slurry-pressing consolidation of silicon nitride

A baseline slurry-pressing method for a silicon nitride material is developed. The Si3N4 composition contained 5.8 wt percent SiO2 and 6.4 wt percent Y2O3. Slurry-pressing variables included volume percent solids, application of ultrasonic energy, and pH. Twenty vol percent slurry-pressed material was approximately 11 percent stronger than both 30 vol percent slurry-pressed and dry-pressed materials. The Student's t-test showed the difference to be significant at the 99 percent confidence level. Twenty volume percent (300 h) slurry-pressed test bars exhibited strengths as high as 980 MPa. Large, columnar beta-Si3N4 grains caused failure in the highest strength specimens. The improved strength correlated with better structural uniformity as determined by radiography, optical microscopy, and image analysis.

Sanders, William A.↗

Crystal-liquid-vapor equilibrium experiments at high temperature (less than or equal to 1800 C) and low, controlled oxygen and hydrogen pressure (10(-1) to 10(-9) PA)

Evidence from carbonaceous chrondrites points to refractory oxides in the system CaO-MgO-Al2O3-TiO2-SiO2-Fe-O as being among the earliest phases to condense from the solar nebula. It is necessary to establish the equilibrium relationships between the relevant crystalline and amorphous phases before the chemical constraints can be meaningfully applied to models of solar system history. Preliminary experiments on earth show that such experiments are feasible. Earth-based experiments suffer from several unavoidable problems. These problems can be overcome by experimentation in the Space Station where the experiments can be conducted under near static pressure conditions and where total pressure equals the sum of controlled hydrogen and oxygen pressures and can be controlled for periods exceeding several hours.

Mysen, B. O.↗

Preparation and evaluation of silicon nitride matrices for silicon nitride-SiC fiber composites

Continuous silicon carbide (SiC) fiber was added to three types of silicon nitride (Si3N4) matrices. Efforts were aimed at producing a dense Si3N4 matrix from reaction-bonded silicon nitride (RBSN) by hot-isostatic-pressing (HIP) and pressureless sintering, and from Si3N4 powder by hot-pressing. The sintering additives utilized were chosen to allow for densification, while not causing severe degradation of the fiber. The ceramic microstructures were evaluated using scanning optical microscopy. Vickers indentation was used to determine the microhardness and fracture toughness values of the matrices. The RBSN matrices in this study did not reach more than 80 percent of theoretical density after sintering at various temperatures, pressures, and additive levels. Hot-pressing Si3N4 powder produced the highest density matrices; hardness and toughness values were within an order of magnitude of the best literature values. The best sintering aid composition chosen included Y2O3, SiO2, and Al2O3 or AlN. Photomicrographs demonstrate a significant reduction of fiber attack by this additive composition.

Axelson, Scott R.↗

Encapsulated diffusion of sulphur into InP

This talk outlines a simple process for the fabrication of n(+)-p solar cells in indium phosphide. Large area cells (greater than 0.25 sq cm) have been made by this process, with a photovoltaic conversion efficiency of 15.21 percent under AM0 conditions of illumination. An ideality factor of 1.1 and a saturation current density of 8 x 10 to the minus 15th power A/sq cm have been observed for these cells. The technique for cell fabrication involves the diffusion of sulfur into InP by an open tube process, and gives highly reproducible results from run to run. A vacuum-deposited layer of gallium sulphide (Ga2S3) was used as the source for sulfur diffusion, with a chemically vapor deposited SiO2 cap layer to prevent decomposition of the InP surface during heat treatment. Diffusions were carried out in a flowing nitrogen ambient at 585 to 708 C, and characterized by their surface carrier concentration and the diffusion constant. The diffusion profile for sulfur in InP is estimated to be of the complementary error function type. The activation energy of the diffusion was estimated to be 1.94 eV. The technique described here is ideally suited for the fabrication of shallow n(+)-p junctions in InP, and has been used for space-borne solar cells.

Parat, K. K.↗

Oxidation of silicon with a 5 eV O(-) beam

A silicon wafer has been oxidized at room temperature in vacuum using a pure, ground-state beam of O(-) ions. The beam was of sufficiently low energy that no displacement damage or implantation was energetically possible. The resulting SiO2 films were analyzed with X-ray photoelectron spectroscopy. A logarithmic dependence of oxide thickness on dose was observed, with an extrapolated oxidation efficiency of unity for the clean silicon surface. A distinct initial oxidation phase was observed, with an anomalously high level of silicon suboxides. In addition, the valence-band offset between the silicon and the oxide was unusually small, suggesting a large interfacial dipole.

Hecht, M. H.↗

Shock temperatures in silica glass - Implications for modes of shock-induced deformation, phase transformation, and melting with pressure

Observations of shock-induced radiative thermal emissions are used to determine the gray body temperatures and emittances of silica glass under shock compression between 10 and 30 GPa. The results suggest that fused quartz deforms heterogeneously in this shock pressure range. It is shown that the 10-16 GPa range coincides with the permanent densification region, while the 16-30 GPa range coincides with the inferred mixed phase region along the silica glass Hugoniot. Low emittances in the mixed phase region are thought to represent the melting temperature of the high-pressure phase, stishovite. Also, consideration is given to the effects of pressure on melting relations for the system SiO2-Mg2SiO4.

Schmitt, Douglas R.↗

Silicide Schottky Barrier For Back-Surface-Illuminated CCD

Quantum efficiency of back-surface-illuminated charge-coupled device (CCD) increased by coating back surface with thin layer of PtSi or IrSi on thin layer of SiO2. In its interaction with positively-doped bulk Si of CCD, silicide/oxide layer forms Schottky barrier that repels electrons, promoting accumulation of photogenerated charge carriers in front-side CCD potential wells. Physical principle responsible for improvement explained in "Metal Film Increases CCD Output" (NPO-16815).

Hecht, Michael H.↗

Thermodynamic analysis of chemical stability of ceramic materials in hydrogen-containing atmospheres at high temperatures

The chemical stability of several ceramic materials in hydrogen-containing environments was analyzed with thermodynamic considerations in mind. Equilibrium calculations were made as a function of temperature, moisture content, and total system pressure. The following ceramic materials were considered in this study: SiC, Si3N4, SiO2, Al2O3, mullite, ZrO2, Y2O3, CaO, MgO, BeO, TiB2, TiC, HfC, and ZrC. On the basis of purely thermodynamic arguments, upper temperature limits are suggested for each material for long-term use in H2-containing atmospheres.

Misra, Ajay K.↗

Chemical profiling of silicon nitride structures

X ray photoelectron spectroscopy (XPS), spectroscopic ellipsometry (SE), and scanning electron microscopy (SEM) were used to study structural and chemical inhomogeneities in several electronic materials and device structures of relevance to radiation hard electronics. The systems studied include metal nitride oxide semiconductor (MNOS) structures, silicon oxynitride (SiO(x)N(y)) formed by the thermal nitridation of SiO2, and semiconductor on insulator (SOI) structures. Studies of MNOS structures suggest that the effect of H2 annealing is to make the Si3N4/SiO2 interface less abrupt by causing interdiffusion of silanol and silamine groups with subsequent oxynitride formation. Another effect of the annealing appears to be to relieve the strain at the SiO2/Si interface.

Vasquez, R. P.↗

Transmission and reflection studies of thin films in the vacuum ultraviolet

Both the transmittance and reflectance of 2 mm thick MgF2 substrates and of thin films of BaF2, CaF2, LaF3, MgF2, Al2O3, HfO2, and SiO2 deposited on these substrates were measured for the wavelength range 120 nm to 230 nm. Results for BaF2, LaF2 and MgF2 show promise as being good materials from which interference filters can be made. The software and related hardware needed to take large amounts of data automatically in future measurements of the transmittance and reflectance was developed.

Peterson, Lennart R.↗

Annealing group III-V compound doped silicon-germanium alloy for improved thermo-electric conversion efficiency

The thermoelectric conversion efficiency of a GaP doped SiGe alloy is improved about 30 percent by annealing the alloy at a temperature above the melting point of the alloy, preferably stepwise from 1200 C to 1275 C in air to form large grains having a size over 50 microns and to form a GeGaP rich phase and a silicon rich phase containing SiP and SiO2 particles.

Vandersande, Jan W.↗

Impact fracture experiments simulating interstellar grain-grain collisions

Oxide and silicate grains condensing during the early phases of the formation of the solar system or in the outflow of stars are exposed to high partial pressures of the low-z elements H, C, N and O and their simple gaseous compounds. Though refractory minerals are nominally anhydrous and non-carbonate, if they crystallize in the presence of H2O, N2 and CO or CO2 gases, they dissolve traces of the gaseous components. The question arises: How does the presence of dissolved gases or gas components manifest itself when grain-grain collisions occur. What are the gases emitted when grains are shattered during a collision event. Researchers report on fracture experiments in ultrahigh vacuum (UHV, approximately less than 10 to the -8th power mbar) designed to measure (by means of a quadrupole mass spectrometer, QMS, with microns to ms time resolution) the emission of gases and vapors during and after impact (up to 1.5 sec). Two terrestrial materials were chosen which represent structural and compositional extremes: olivine (San Carlos, AZ), a densely packed Mg-Fe(2+) silicate from the upper mantle, available as 6 to 12 mm single crystals, and obsidian (Oregon), a structurally open, alkaline-SiO2-rich volcanic glass. In the olivine crystals OH- groups have been identified spectroscopically, as well as H2 molecules. Obsidian is a water-rich glass containing OH- besides H2O molecules. Olivine from the mantle often contains CO2, either as CO2-rich fluid in fluid inclusions or structurally dissolved or both. By analogy to synthetic glasses CO2 in the obsidian may be present in form of CO2 molecules in voids of molecular dimensions, or as carbonate anions, CO3(2-). No organic molecules have been detected spectroscopically in either material. Results indicate that refractory oxide/silicates which contain dissolved traces of the H2O and CO/CO2 components but no spectroscopically detectable traces of organics may release complex H-C-O (possibly H-C-N-O) molecules upon fracture, plus metal vapor. This points: (1) at complex reaction mechanisms between dissolved H2O, CO/CO2 (and N2) components within the mineral structure or during fracture, and (2) at the possibility that similar emission processes occur following grain-grain collisions in interstellar dust clouds.

Freund, Friedemann↗

Effects of grain size and grain boundary on critical current density of high T(sub c) superconducting oxides

By means of adding impurity elements in high T sub c oxides, the effects were studied of grain size and grain boundary on the critical current density of the following systems: YBa2Cu3O(7-y) and Bi-Pr-Sr-Ca-Cu-O. In order to only change the microstructure instead of the superconductivity of the grains in the samples, the impurity elements were added into the systems in terms of the methods like this: (1) substituting Y with the lanthanide except Pr, Ce, and Tb in YBa2Cu3O(7-y) system to finning down grains in the samples, therefore, the effect can be investigated of the grain size on the critical current density of 1:2:3 compounds; (2) mixing the high T sub c oxides with the metal elements, such as Ag, according to the composition of (high T sub c oxide)1-xAgx to metallize the grain boundaries in the samples, studying the effect of the electric conductivity of the grain boundaries on the critical current density; (3) adding SiO2, PbO2, and SnO2 into the high T sub c oxide to form impurity phases in the grain boundaries, trying to find out the effects of the impurity phases or metalloid grain boundaries on the critical current density of the high T sub c superconductors. The experimental results indicate that in the case of of the presence of the metalloid grain boundaries finning down grains fails to enhance the j sub c, but restrains it strongly, the granular high T sub c superconductors with the small size grains coupled weakly is always the low j sub c system.

Zhao, Y.↗

Determination of trace element mineral/liquid partition coefficients in melilite and diopside by ion and electron microprobe techniques

The applicability of ion microprobe (IMP) for quantitative analysis of minor elements (Sr, Y, Zr, La, Sm, and Yb) in the major phases present in natural Ca-, Al-rich inclusions (CAIs) was investigated by comparing IMP results with those of an electron microprobe (EMP). Results on three trace-element-doped glasses indicated that it is not possible to obtain precise quantitative analysis by using IMP if there are large differences in SiO2 content between the standards used to derive the ion yields and the unknowns.

Kuehner, S. M.↗

Cosmic ray production rates of Be-10 and Al-26 in quartz from glacially polished rocks

The concentrations of Be-10 and Al-26 in quartz crystals extracted from glacially polished granitic surfaces from the Sierra Nevada range are studied. These surfaces are identified with the glacial advance during the Tioga period about 11,000 yr ago. The measurements yield the most accurate estimates to date for the absolute production rates of three nuclides in SiO2 due to cosmic ray nucleons and muons for geomagnetic latitudes 43.8-44.6 N and altitudes 2.1-3.6 km.

Nishiizumi, K.↗

Burner rig hot corrosion of silicon carbide and silicon nitride

A number of commercially available SiC and Si3N4 materials were exposed to 1000 C for 40 h in a high-velocity, pressurized burner rig as a simulation of an aircraft turbine environment. Na impurities (2 ppm) added to the burner flame resulted in molten Na2SO4 deposition, attack of the SiC and Si3N4, and formation of substantial Na2O+x(SiO2) corrosion product. Room-temperature strength of the materials decreased as a result of the formation of corrosion pits in SiC and grain-boundary dissolution and pitting in Si3N4.

Fox, Dennis S.↗

Determining the nucleation rate curve for lithium disilicate glass by differential thermal analysis

The crystallization of lithium disilicate (Li2O+2SiO2) glass nucleated at various temperatures was studied by differential thermal analysis (DTA). A plot of the DTA crystallization peak height versus nucleation temperature closely resembles the classical nucleation rate curve for lithium disilicate glass whose maximum is at 453 C. The glass becomes saturated with internal nuclei when heated at 453 C for 10 h. The activation energy for crystallization and the heat of crystallization are independent of the concentration of nuclei and are 249 + or - 10 and 67 + or - 3 kJ/mol, respectively. The Avrami exponent, n, depends strongly on the concentration of nuclei in the glass.

Ray, Chandra S.↗