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At least 469 records · Page 26

Electrochemical Deposition with Redox Replacement of Lanthanum with Uranium in Molten LiCl-KCl

Electrochemical recovery of dilute concentrations of actinides from spent nuclear fuel would reduce the longevity of storing high-level nuclear waste. Electrochemical deposition with redox replacement (EDRR) is used in a molten salt medium for the selective electrochemical recovery of uranium in the presence of excess concentrations of lanthanum. In each EDRR cycle, after a short electrodeposition pulse, the deposited lanthanum is spontaneously replaced by uranium at open circuit. After repeated cycles, uranium metal was obtained on a tungsten electrode immersed in LiCl-KCl melt that contained 1 wt.% lanthanum chloride – 0.15 wt.% uranium 4+ chloride. Here, scanning electron microscopy and energy dispersive X-ray spectroscopy analysis revealed uranium particles approximately 0.5 - 1 μm with well-defined rectangular shapes; and with 20 – 60 times more uranium recovered on the surface of the electrode than lanthanum.

38 RADIATION CHEMISTRY, RADIOCHEMISTRY, AND NUCLEA↗

Quantum Simulation of Molecular Electronic States with a Transcorrelated Hamiltonian: Higher Accuracy with Fewer Qubits

Simulation of electronic structure is one of the most promising applications on noisy intermediate-scale quantum (NISQ) era devices. However, NISQ devices suffer from a number of challenges like limited qubit connectivity, short coherence times, and sizable gate error rates. Thus, desired quantum algorithms should require shallow circuit depths and low qubit counts to take advantage of these devices. Here, we attempt to reduce quantum resource requirements for molecular simulations on a quantum computer while maintaining the desired accuracy with the help of classical quantum chemical theories of canonical transformation and explicit correlation. In this work, compact ab initio Hamiltonians are generated classically, in the second quantized form, through an approximate similarity transformation of the Hamiltonian with (a) an explicitly correlated two-body unitary operator with generalized pair excitations that remove the Coulombic electron–electron singularities from the Hamiltonian and (b) a unitary one-body operator to efficiently capture the orbital relaxation effects required for accurate description of the excited states. The resulting transcorrelated Hamiltonians are able to describe both the ground and the excited states of molecular systems in a balanced manner. Using the variational quantum eigensolver (VQE) method based on the unitary coupled cluster with singles and doubles (UCCSD) ansatz and only a minimal basis set (ANO-RCC-MB), we demonstrate that the transcorrelated Hamiltonians can produce ground state energies comparable to the reference CCSD energies with the much larger cc-pVTZ basis set. This leads to a reduction in the number of required CNOT gates by more than 3 orders of magnitude for the chemical species studied in this work. Furthermore, using the quantum equation of motion (qEOM) formalism in conjunction with the transcorrelated Hamiltonian, we are able to reduce the deviations in the excitation energies from the reference EOM-CCSD/cc-pVTZ values by an order of magnitude. In conclusion, the transcorrelated Hamiltonians developed here are Hermitian and contain only one- and two-body interaction terms and thus can be easily combined with any quantum algorithm for accurate electronic structure simulations.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Quantum Divide and Compute: Exploring the Effect of Different Noise Sources

Abstract Our recent work (Ayral et al. in Proceedings of IEEE computer society annual symposium on VLSI, ISVLSI, pp 138–140, 2020. 10.1109/ISVLSI49217.2020.00034 ) showed the first implementation of the Quantum Divide and Compute (QDC) method, which allows to break quantum circuits into smaller fragments with fewer qubits and shallower depth. This accommodates the limited number of qubits and short coherence times of quantum processors. This article investigates the impact of different noise sources—readout error, gate error and decoherence—on the success probability of the QDC procedure. We perform detailed noise modeling on the Atos Quantum Learning Machine, allowing us to understand tradeoffs and formulate recommendations about which hardware noise sources should be preferentially optimized. We also describe in detail the noise models we used to reproduce experimental runs on IBM’s Johannesburg processor. This article also includes a detailed derivation of the equations used in the QDC procedure to compute the output distribution of the original quantum circuit from the output distribution of its fragments. Finally, we analyze the computational complexity of the QDC method for the circuit under study via tensor-network considerations, and elaborate on the relation the QDC method with tensor-network simulation methods.

97 MATHEMATICS AND COMPUTING↗

Domain-specific compilers for dynamic simulations of quantum materials on quantum computers

Abstract Simulation of the dynamics of quantum materials is emerging as a promising scientific application for noisy intermediate-scale quantum (NISQ) computers. Due to their high gate-error rates and short decoherence times, however, NISQ computers can only produce high-fidelity results for those quantum circuits smaller than some given circuit size. Dynamic simulations, therefore, pose a challenge as current algorithms produce circuits that grow in size with each subsequent time-step of the simulation. This underscores the crucial role of quantum circuit compilers to produce executable quantum circuits of minimal size, thereby maximizing the range of physical phenomena that can be studied within the NISQ fidelity budget. Here, we present two domain-specific (DS) quantum circuit compilers for the Rigetti and IBM quantum computers, specifically designed to compile circuits simulating dynamics under a special class of time-dependent Hamiltonians. The compilers outperform state-of-the-art general-purpose compilers in terms of circuit size reduction by around 25%–30% as well as wall-clock compilation time by around 40% (dependent on system size and simulation time-step). Drawing on heuristic techniques commonly used in artificial intelligence, both compilers scale well with simulation time-step and system size. Code for both compilers is open-source and packaged into a full-stack quantum simulation software with tutorials included for ease of use for future researchers wishing to perform dynamic simulations of quantum materials on quantum computers. As our DS compilers provide significant improvements in both compilation time and simulation fidelity, they provide a building block for accelerating progress toward physical quantum supremacy.

Physics↗

The Poor Academic’s DC-Offset for Reversing Polarity in Electrochemical Cells: Application to Redox Flow Cells

We provide a simple and inexpensive manual DC-offset method for extending the accepted voltage range of a battery cycler to negative voltages, without interfering with the actual operation of the electrochemical cell under the test or exceeding the voltage specs of the battery cycler instrument. We describe the working principles of the method and validate the proposed setup by operating short-term and long-term redox flow battery cycling using compositionally symmetric cell, with open-circuit voltage of zero, and full cell configurations. The method can be used to extend the capability of battery cycler instrumentation to operate any electrochemical cell that requires the polarity to be reversed during operation. Applications include cycling of other symmetric cells (e.g., Li-ion cells), implementation of polarity reversal steps for rejuvenation of electroactive species or rebalancing electrochemical cells, and alternating polarity for electrochemical synthesis.

25 ENERGY STORAGE↗

Stability of a Ni/NiF 2 Reference Electrode with a Metallic Membrane for Use in Molten Fluoride Salts

In this study, an experimental high-temperature fluoride salt reference electrode (RE) developed by HiFunda LLC was tested in molten FLiNaK at 550 °C. The high-temperature reference electrode (HTRE), based on the Ni/NiF 2 redox couple, was tested over a period of 13 d for short-term stability, long-term stability, and electrochemical analysis capabilities. The HTRE was tested using open circuit potentiometry (OCP), cyclic voltammetry (CV), square wave voltammetry (SWV), and electrochemical impedance spectroscopy (EIS). The HTRE reference potential was measured against changes in salt composition by increasing FeF 2 concentrations in the melt across six additions from 0 to 0.1 mol% FeF 2 . The long-term stability of the electrode was then tested over ten days at a constant composition of 0.1 mol% FeF 2 . OCP, SWV, and CV were used to calculate an average potential drift between 7–10 mV per day. Using CV and SWV, the number of electrons transferred for iron reduction and the diffusion coefficient of Fe 2+ were measured.

Electrochemistry↗

Sudden-Discharge Cycling Characteristics and Millisecond Dynamic Behaviors of a HTS Stainless-Steel Insulated Double-Pancake Coil With Thin Copper Plates

We have tested an intermediate-sized HTS stainless-steel (co-wound) insulated double pancake coil (~132 turns per coil) and discovered dynamic effects during sudden discharge on both millisecond and second scales. For soft break, the power supply is turned off suddenly but the shunt resistor (164 milliohm) is still connected; for hard break, a high voltage contactor is used to suddenly open the circuit so that the leads are completely open. Hard break is dangerous to traditionally insulated LTS magnets, but the SS-insulated HTS DPC retained integrity over ¡80 charge-discharge cycles. Voltage decay curves for soft and hard breaks are studied on short and long timescales. On long timescales, we observe the expected exponential decay and measure the time constant to calculate contact resistance. On short timescales, we observe highly dynamic effects: a hyper-exponential decay suggesting that the inductance or contact resistance is suddenly changing with time, likely an indication of the RL circuit forming. Moreover, peak voltage immediately (ms) after the sudden discharge were collected and compared. It is found that the peak voltage in soft-discharge is proportional to the applied current, while the those in hard-break has a unique pattern and tends to stay flat even though the applied current increases.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Polarization-controlled volatile ferroelectric and capacitive switching in Sn 2 P 2 S 6

Abstract Smart electronic circuits that support neuromorphic computing on the hardware level necessitate materials with memristive, memcapacitive, and neuromorphic- like functional properties; in short, the electronic response must depend on the voltage history, thus enabling learning algorithms. Here we demonstrate volatile ferroelectric switching of Sn 2 P 2 S 6 at room temperature and see that initial polarization orientation strongly determines the properties of polarization switching. In particular, polarization switching hysteresis is strongly imprinted by the original polarization state, shifting the regions of non-linearity toward zero-bias. As a corollary, polarization switching also enables effective capacitive switching, approaching the sought-after regime of memcapacitance. Landau–Ginzburg–Devonshire simulations demonstrate that one mechanism by which polarization can control the shape of the hysteresis loop is the existence of charged domain walls (DWs) decorating the periphery of the repolarization nucleus. These walls oppose the growth of the switched domain and favor back-switching, thus creating a scenario of controlled volatile ferroelectric switching. Although the measurements were carried out with single crystals, prospectively volatile polarization switching can be tuned by tailoring sample thickness, DW mobility and electric fields, paving way to non-linear dielectric properties for smart electronic circuits.

97 MATHEMATICS AND COMPUTING↗

Low-cost gradient amplifiers for small MRI systems

Here, we describe low-cost gradient amplifiers for small MRI systems, such as those based on small/medium permanent magnets. The requirements for MRI gradient amplifiers are quite similar to those of modestly priced audio stereo power amplifiers. Such amplifiers for sound service can be modified to be DC coupled, extending their response down to zero frequency, as needed for MRI gradient service. We describe such modifications to one unit (Samson Servo 600) and mention a commercially available modification of another. The 600 is capable of an output greater than ±8 A and ±60 V, much greater than our needs for a greenhouse MRI. Audio amplifiers can be used this way as controlled voltage (CV) gradient amplifiers, with acceptable performance because the gradient coils typically have short L/R time constants. Superior performance can be had by using a controlled current (CC) “front end”; the circuit of our simple front end is included. The complete 3-axis CC system costs about $1200.

47 OTHER INSTRUMENTATION↗

Simplified calculation of the area specific impedance for solid-state battery design

Simplified algebraic area specific impedance (ASI) correlations have been developed for solid-state composite battery electrodes made of a single ion conducting electrolyte, conductive additive, and intercalation active material. Two ASI expressions were developed, one for short times ( i.e. , pulsed power operation) and another for the pseudo steady state operation (i.e., sustained discharge for energy estimation). A full electrochemical model based on porous electrode theory was developed to examine the accuracy of the simplified ASI expressions. The simplified expressions agree favorably with full model results over a wide range of parameters (i.e. , electrode thicknesses, electrolyte conductivities, solid-state diffusion coefficients, specific surface areas, etc.) and conditions (i.e. , C-rates, states of charge, and pulse times). Under most conditions, the error between the full model and the correlations is well below 7 %. Higher errors were observed for the pseudo steady state expression at high/ low states of charge where the assumption of uniform reaction distributions loses validity. Here, the short time ASI has higher error at low states of charge due to the nonlinearity of the open circuit voltage equation, which is assumed linear in the formulation of the simplified algebraic expression.

25 ENERGY STORAGE↗

LEBT Buncher / Feed Forward / Frequency Generation: System Design Document (SDD)

The LAMP Low Energy Beam Transport (LEBT) transfers a continuous beam at 100 keV from the ion source to RFQ in LEBT. A LEBT buncher imposes an energy tilt to initiate velocy bunching in the chopped beam pulse about 25 ns long to form a short MPEG bunch. One possible option for the LEBT buncher based on a two-gap LC-circuit driven structure was considered, which is similar to the existing LANSCE low-frequncy buncher (LFB). Another possible option is a non-resonant element driven by a pulse-forming-network that provides a single pulse at the repetition frequency of MPEG beam, with a period of 1.8 µs. The LEBT operation is synchronized with the accelerator timing system.

43 PARTICLE ACCELERATORS↗

Light induced ion migration studies in perovskite solar cell using nonlinear impedance spectroscopy

Complex interactions between mobile ions and charge carriers in perovskite solar cells (PSCs) make it challenging to fully understand their dynamic interplay. Exposure to light further complicates these interactions, altering the system’s dynamics and inducing nonlinear effects that lead to changes in the J−V curve. Understanding these effects is crucial for improving the operational stability of PSCs. Impedance spectroscopy (IS) is a powerful technique for evaluating relaxation processes in the frequency domain; however, it is limited in capturing nonlinear contributions. Here, in this work, nonlinear impedance spectroscopy (NLIS) is employed to analyze the higher harmonic response to AC perturbation, both in the dark and after short-term light exposure. A shift in the low-frequency (LF) higher harmonic peak is observed after open-circuit light exposure, attributed to an altered electric field suggesting ion re-distribution, whereas closed-circuit exposure shows no LF shift, indicating minimal ion movement. Additionally, light exposure reduces higher-order admittance, more notably in open-circuit conditions, suggesting decreased recombination. Temperature-dependent analysis was conducted to characterize the activation energy of migrating species, identifying iodide as the dominant migrating ion.

14 SOLAR ENERGY↗

Using Explainable Artificial Intelligence to Predict Perovskite Solar Cell Electrical Metastability from Operando Photoluminescence Images in Accelerated Stress Testing

Metal halide perovskite (MHP) solar cells exhibit a metastable response to bias governed by coupled ionic–electronic processes, complicating the conventional reciprocity relation between luminescence intensity and device open-circuit voltage (V oc ). This limits the use of luminescence as a diagnostic for device screening or accelerated stress testing, motivating new approaches that can interpret photoluminescence (PL) signals under nonequilibrium conditions. From the artificial intelligence perspective, we develop an explainable deep learning framework that integrates convolutional neural networks (CNN), long short-term memory (LSTM) layers, and an attention mechanism to learn spatiotemporal features from operando photoluminescence PL image sequences. The model achieves a mean absolute error of ±0.027 V in predicting open-circuit voltage transients and reduces extreme-tail errors by up to 78% compared to physics-based reciprocity calculations. Gradient-weighted Class Activation Mapping (Grad-CAM) provides interpretability by highlighting physically meaningful regions such as electrode edges and emergent defect features. From the engineering application perspective, this framework enables accurate, contactless prediction of device V oc and identification of degradation-relevant features during accelerated aging of perovskite solar cells. This approach demonstrates how explainable AI can enhance operando diagnostics and reliability analysis in photovoltaic devices under nonequilibrium conditions.

14 SOLAR ENERGY↗

A Nitroxide Containing Organic Molecule in a Deep Eutectic Solvent for Flow Battery Applications

The nitroxide radical redox organic molecule, 2-phenyl-4,4,5,5-tetrame- thylimidazoline-1-oxyl-3-oxide (PTIO), was investigated for the first time in a deep eutectic solvent (DES)-like system consisting of a 1:4 molar ratio of choline chloride and ethylene glycol(Ch1EG4) as a redox flow battery electrolyte. PTIO is a single molecule with three oxidation states, and can provide both positive and negative redox couples for a flow battery. A flow battery using the PTIO/Ch1EG4 electrolyte demonstrated nearly 50% roundtrip efficiency with an approximately 1 V open circuit potential. Inefficiencies were primarily due to membrane resistance which can be significantly lowered with increased temperature. While PTIO appears stable over short periods (hours), the oxidized form is not stable in the DES-like electrolyte over longer times. Molecular modeling was performed to investigate the relative stability of PTIO in DES as compared to the previously studied 4-hydroxy-TEMPO (4HT). It was found that the oxoammonium cation 4HT + exhibits a noticeably larger nucleophilic reactive cloud as compared to PTIO + , indicating a higher reactivity. This method to predict stability of the oxoammonium cation shows promise to inform the design and synthesis of promising redox systems based on nitroxide radicals in DES electrolytes to identify new chemistries for large scale energy storage.

25 ENERGY STORAGE↗

Fluctuations of subsystem entropies at late times

We study the fluctuations of subsystem entropies in closed quantum many-body systems after thermalization. Using a combination of analytics and numerics for both random quantum circuits and Hamiltonian dynamics, we find that the statistics of such entropy fluctuations is drastically different than in the classical setting. For instance, shortly after a system thermalizes, the probability of entropy fluctuations for a subregion is suppressed in the dimension of the Hilbert space of the complementary subregion. This suppression becomes increasingly stringent as a function of time, ultimately depending on the exponential of the Hilbert space dimension, until extremely late times when the amount of suppression saturates. We also use our results to estimate the total number of rare fluctuations at large timescales. We find that the “Boltzmann brain” paradox is largely ameliorated in quantum many-body systems, in contrast with the classical setting.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Vertical organic electrochemical transistors for complementary circuits

Abstract Organic electrochemical transistors (OECTs) and OECT-based circuitry offer great potential in bioelectronics, wearable electronics and artificial neuromorphic electronics because of their exceptionally low driving voltages (<1 V), low power consumption (<1 µW), high transconductances (>10 mS) and biocompatibility 1–5 . However, the successful realization of critical complementary logic OECTs is currently limited by temporal and/or operational instability, slow redox processes and/or switching, incompatibility with high-density monolithic integration and inferior n-type OECT performance 6–8 . Here we demonstrate p- and n-type vertical OECTs with balanced and ultra-high performance by blending redox-active semiconducting polymers with a redox-inactive photocurable and/or photopatternable polymer to form an ion-permeable semiconducting channel, implemented in a simple, scalable vertical architecture that has a dense, impermeable top contact. Footprint current densities exceeding 1 kA cm −2 at less than ±0.7 V, transconductances of 0.2–0.4 S, short transient times of less than 1 ms and ultra-stable switching (>50,000 cycles) are achieved in, to our knowledge, the first vertically stacked complementary vertical OECT logic circuits. This architecture opens many possibilities for fundamental studies of organic semiconductor redox chemistry and physics in nanoscopically confined spaces, without macroscopic electrolyte contact, as well as wearable and implantable device applications.

Science & Technology - Other Topics↗

Cyberattack Detection and Mitigation on Central Volt‐VAr Using Circuit Law and Machine Learning

ABSTRACT In a distribution grid, voltage is maintained within a nominal range through a Volt‐VAr function that controls capacitor banks, reactive power of distributed energy resources (DER), and on‐load tap changers (OLTC). Availability of communications helps with the implementation of central Volt‐VAr control; however, it also opens the system to cyberattacks, causing voltage disturbances. Previous work has shown the adverse impacts of false data injection (FDI) on the central Volt‐VAr control; however, very few works have studied methods to detect and mitigate FDI on Volt‐VAr control. This paper addresses gaps in the detection and mitigation of FDI on the measurement packets of a central Volt‐VAr control. This work uses a two‐stage algorithm for cyberattack detection since the accuracy of a single‐stage machine learning (ML)–based detection method decreases while dealing with unseen data. The first stage is based on the verification of measurements against circuit laws, and the second stage utilizes a tree search algorithm and an ML method to detect the falsified data. This paper compares long short‐term memory (LSTM) and bidirectional LSTM (BiLSTM) as the employed ML algorithms. Finally, the mitigation algorithm replaces the falsified data with the estimated output of the ML algorithm. The effectiveness of the proposed method is tested for several cases using the IEEE 13‐bus test system in PSCAD software.

Beikbabaei, Milad [Bradley Department of Electrica↗

Low Frequency Cable Dual Shield Penetration Using Complete Transfer Immittance Model

This report discusses low frequency coupling and subsequent penetration of a dual shield cable using a transfer immittance model with reciprocal sources. Configurations include: 1) where the cable is above a ground plane and shorted at both ends, 2) a monopole arrangement where it is shorted at one end and open at the other end, and 3) a monopole arrangement where the open end is loaded by a disc. The open circuit voltage within the cable is estimated for each case.

42 ENGINEERING↗