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At least 469 records · Page 26
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Environmental stability of additively manufactured siliconized silicon carbide for applications in hybrid energy systems

A key consideration for the successful operation of hybrid energy systems will be the environmental stability of materials used for their construction, particularly when experiencing service environments containing water vapor at high temperatures. Here, we report results from the characterization of siliconized silicon carbide (Si-SiC) prepared via binder jet additive manufacturing and reactive silicon melt infiltration after being exposed to environments representative of those in solid oxide fuel cell (SOFC) anodes, and to exhaust gases inside a microturbine operating on natural gas. In both cases, it was found that oxide scales formed on the surface and that these scales were dense, continuous, and well-bonded to the substrates, although there was evidence of transverse and longitudinal cracking most likely as a result of mismatches in the thermal expansion of the scale and the substrate. Measured values of the thickness of the oxide scale were compared to those predicted by parabolic oxidation kinetics of silicon, but the potential effects of silica volatilization induced by water vapor, and silica reduction when exposed to hydrogen are discussed. The overall results showed that the oxide scale is expected to be protective under the conditions of hybrid power generation systems.

36 MATERIALS SCIENCE↗
NASA NTRS1991

The SiH vibrational stretch as an indicator of the chemical state of interstellar grains

The infrared spectra of amorphous silicate grains and films formed in a variety of laboratory experiments have been measured. It is found that the frequency of the SiH fundamental stretch is extremely sensitive to the chemical environment of the grain in which the silicon is bound and varies from 2270/cm in oxidized grains to 2110/cm in a reducing environment. It is proposed that features previously observed in W33A could be due to -SiH groups in amorphous silica, partially reduced silica, silicon nitride or slightly oxidized silicon carbide. It is predicted that observations at 2270/cm will reveal a feature due to -SiH groups in highly oxidized interstelar and circumstellar grains. Such a feature might also appear in the spectra of comets.

Moore, Marla H.↗
NASA NTRS1998

Fundamentals of Passive Oxidation In SiC and Si3N4

The very slow oxidation kinetics of silicon carbide and silicon nitride, which derive from their adherent and passivating oxide films, has been explored at length in a broad series of studies utilizing thermogravimetric analysis, electron and optical micrography, energy dispersive spectrometry, x-ray diffractometry, micro-analytical depth profiling, etc. Some interesting microstructural phenomena accompanying the process of oxidation in the two materials will be presented. In Si3N4 the oxide is stratified, with an SiO2 topscale (which is relatively impervious to O2)underlain by a coherent subscale of silicon oxynitride which is even less permeable to O2- Such "defence in depth" endows Si3N4 with what is perhaps the highest oxidation resistance of any material, and results in a unique set of oxidation processes. In SiC the oxidation reactions are much simpler, yet new issues still emerge; for instance, studies involving controlled devitrification of the amorphous silica scale confirmed that the oxidation rate of SiC drops by more than an order of magnitude when the oxide scale fully crystallizes.

Thomas-Ogbuji, Linus U.↗
DOE OSTI2025

High and Ultra-High Temperature Reaction Kinetics by Single Nanoparticle Mass Spectrometry

Methodology is presented for non-destructive, optically-detected single nanoparticle (NP) mass spectrometry, with the goal of extracting surface reaction kinetics for single NPs at high temperatures. Methods for determining the NP charge, mass, and temperature as a function of time are discussed, and the data are used to extract both the absolute kinetics for mass change, as well as the efficiencies of the surface processes that cause them. Factors that contribute to the uncertainties in absolute and relative mass determination, and in the resulting kinetic parameters, are discussed. The method allows the NP-to-NP variations in initial reactivity to be measured directly, along with the time evolution of reactivity resulting from NP structural/compositional changes that occur under reaction conditions. The strengths and limitations of single nanoparticle mass spectrometry as a high temperature surface kinetics tool are discussed in the context of sublimation and O2 oxidation kinetics experiments for single hafnium (Hf) NPs at temperatures ranging above 2400 K. The Hf oxidation kinetics are compared to analogous oxidation experiments for silicon, graphite, and carbon black NPs. In all four cases, the oxidation chemistry was dominated by processes that result in net mass loss, and the distinct mechanisms responsible are discussed. All four NPs also eventually passivated, i.e., the efficiencies for oxidative etching decreased by at least two orders of magnitude, relative to the initial efficiencies. Furthermore, the passivation mechanisms, which are quite different for carbon, compared to silicon or hafnium, are discussed. Carbon NP passivation is attributed to structural isomerization leading to fully coordinated, fullerene-like NP surfaces, while for silicon and hafnium, passivation results from delayed formation of an oxide layer, triggered by accumulation of oxygen in the NP sub-surface region.

36 MATERIALS SCIENCE↗
NASA NTRS1978

Silicone azide fireproof material

Finely powdered titanium oxide was added to silicone azide as the sintering agent to produce a nonflammable material. Mixing proportions, physical properties, and chemical composition of the fireproofing material are included.

Source record↗
DOE OSTI2024

Epitaxial Growth of Large-Scale 2D CrTe 2 Films on Amorphous Silicon Wafers With Low Thermal Budget

2D van der Waals (vdW) magnets open landmark horizons in the development of innovative spintronic device architectures. However, their fabrication with large scale poses challenges due to high synthesis temperatures (>500 °C) and difficulties in integrating them with standard complementary metal-oxide semiconductor (CMOS) technology on amorphous substrates such as silicon oxide (SiO 2 ) and silicon nitride (SiN x ). Here, a seeded growth technique for crystallizing CrTe 2 films on amorphous SiN x /Si and SiO 2 /Si substrates with a low thermal budget is presented. This fabrication process optimizes large-scale, granular atomic layers on amorphous substrates, yielding a substantial coercivity of 11.5 kilo-oersted, attributed to weak intergranular exchange coupling. Field-driven Néel-type stripe domain dynamics explain the amplified coercivity. Moreover, the granular CrTe 2 devices on Si wafers display significantly enhanced magnetoresistance, more than doubling that of single-crystalline counterparts. Current-assisted magnetization switching, enabled by a substantial spin–orbit torque with a large spin Hall angle (85) and spin Hall conductivity (1.02 × 10 7 ℏ/2e Ω -1 m -1 ), is also demonstrated. These observations underscore the proficiency in manipulating crystallinity within integrated 2D magnetic films on Si wafers, paving the way for large-scale batch manufacturing of practical magnetoelectronic and spintronic devices, heralding a new era of technological innovation.

2D magnetic thin films↗
NASA NTRS2003

Reactive Processing of Environmentally Conscious, Biomorphic Ceramics from Natural Wood Precursors

Environmentally conscious, biomorphic ceramics (Ecoceramics) are a new class of materials that are manufactured from renewable resources and wastes. In this study, silicon carbide and oxide-based biomorphic ceramics have been fabricated from pine and jelutong wood precursors. A carbonaceous preform is produced through wood pyrolysis and subsequent infiltration with oxides (ZrO2 sols) and liquid silicon to form ceramics. These biomorphic ceramics show a wide variety of microstructures, densities, and hardness behavior that are determined by the type of wood and infiltrants selected.

Singh, M.↗
NASA NTRS1976

Fabrication of OSOS cells by neutral ion beam sputtering

Oxide semiconductor on silicon (OSOS) solar cells have been fabricated from various indium tin oxide (In2O3)x(SnO2)1-x compositions sputtered onto p-type single crystal silicon substrates with a neutralized argon ion beam. High temperature processing or annealing was not required. The highest efficiency was achieved with x = 0.91 and was 12 percent. The cells are environmentally rugged, chemically stable, and show promise for still higher efficiencies. Moreover, the ion beam sputtering fabrication technique is amenable to low cost, continuous processing.

Burk, D. E.↗
NASA NTRS1993

Mechanism of incipient oxidation of bulk chemical vapor deposited Si3N4

X-ray photoelectron spectroscopy was employed, in conjunction with ion bombardment, to analyze the chemical composition profile across thin (less than 50 nm) oxide films on chemically vapor deposited Si3N4. The thermal oxides were grown in dry oxygen at 1100 C on samples with or without native oxide film (formed in room air). The results show that the thermal oxidation product was silicon oxynitride of graded N:O ratio, and that the presence of a native oxide film promotes the formation of a SiO2 crust over the oxynitride. It is proposed that the fundamental mechanism of Si3N4 oxidation is progressive O-for-N substitution in the silicon oxynitride unit tetrahedron, which is best designated SiN(2-x)O(2+x), where x is also an index of depth. The corresponding equation for nonstoichiometric oxidation of Si3N4 describes a bulk (rather than an interface) reaction process, with significant implications for O2 and N2 fluxes and diffusivities.

Ogbuji, L. U. T.↗
NASA NTRS1991

Chemically Layered Porous Solids

Aerogels and other porous solids in which surfaces of pores have chemical properties varying with depth below macroscopic surfaces prepared by sequences of chemical treatments. Porous glass or silica bead treated to make two depth zones having different chemical properties. Beads dropped along tube filled with flowing gas containing atomic oxygen, generated in microwave discharge. General class of materials treatable include oxides of aluminum, silicon, zirconium, tin, titanium, and nickel, and mixtures of these oxides. Potential uses of treated materials include chromatographic separations, membrane separations, controlled releases of chemicals, and catalysis.

Koontz, Steve↗
DOE OSTI2020

Investigating the Chemical Reactivity of Lithium Silicate Model SEI Layers

Silicon anodes suffer from an unstable solid electrolyte interphase (SEI) layer that contributes to undesirable capacity fade with cycling. A key part to addressing this unstable SEI formation is to examine how certain components of the SEI react with the electrolyte over time. One SEI component that has not been thoroughly studied in the context of the chemical reactivity against the electrolyte is lithiated silicate. Four model silicate thin films with increasing lithium content were deposited by radio frequency (RF) magnetron sputtering to study how the lithiation of the native oxide on a silicon anode affects the chemical stability of the anode surface. SiO2, Li2Si2O5, Li2SiO3, and Li3SiOx films were exposed to 1.2 M LiPF6 in the 3:7 wt% ethylene carbonate/ethyl methyl carbonate (EC/EMC) electrolyte for periods of time that are representative of the amount of time it takes to undergo cell formations. Soaked samples were rinsed, dried, and characterized by a combination of attenuated total reflectance-infrared spectroscopy (ATR-IR), focused ion beam-secondary electron microscopy (FIB-SEM), and X-ray photoelectron spectroscopy (XPS) depth profiling. It was found that the rate of the decrease in film thickness of the silicates exposed to the electrolyte over time increases as a function of the lithium content in the thin film. This reaction involves HF etching and LiPF6 salt degradation leading to silicate loss and fluorination throughout the bulk. Understanding this chemical instability is critical to determining the overall mechanism of SEI degradation over time.

ADVANCED PROPULSION SYSTEMS,ENERGY STORAGE↗
NASA NTRS1992

Thermal degradation study of silicon carbide threads developed for advanced flexible thermal protection systems

Silicon carbide (SiC) fiber is a material that may be used in advanced thermal protection systems (TPS) for future aerospace vehicles. SiC fiber's mechanical properties depend greatly on the presence or absence of sizing and its microstructure. In this research, silicon dioxide is found to be present on the surface of the fiber. Electron Spectroscopy for Chemical Analysis (ESCA) and Scanning Electron Microscopy (SEM) show that a thin oxide layer (SiO2) exists on the as-received fibers, and the oxide thickness increases when the fibers are exposed to high temperature. ESCA also reveals no evidence of Si-C bonding on the fiber surface on both as-received and heat treated fibers. The silicon oxide layer is thought to signal the decomposition of SiC bonds and may be partially responsible for the degradation in the breaking strength observed at temperatures above 400 C. The variation in electrical resistivity of the fibers with increasing temperature indicates a transition to a higher band gap material at 350 to 600 C. This is consistent with a decomposition of SiC involving silicon oxide formation.

Tran, Huy Kim↗
NASA NTRS2005

Ground-Laboratory to In-Space Effective Atomic-Oxygen Fluence Determined for DC 93-500 Silicone

Surfaces on the leading edge of spacecraft in low Earth orbit (e.g., surface facing the velocity direction), such as on the International Space Station, are subject to atomic oxygen attack, and certain materials are susceptible to erosion. Therefore, ground-based laboratory testing of the atomic oxygen durability of spacecraft materials is necessary for durability assessment when flight data are not available. For accurate space simulation, the facility is commonly calibrated on the basis of the mass loss of Kapton (DuPont, Wilmington, DE) as a control sample for effective fluence determination. This is because Kapton has a well-characterized atomic oxygen erosion yield (E(sub y), in cubic centimeters per atom) in the low Earth orbit (LEO) environment. Silicones, a family of commonly used spacecraft materials, do not chemically erode away with atomic oxygen attack like other organic materials that have volatile oxidation products. Instead, silicones react with atomic oxygen and form an oxidized hardened silicate surface layer. Often the loss of methyl groups causes shrinkage of the surface skin and "mud-tile" crazing degradation. But silicones often do not lose mass, and some silicones actually gain mass during atomic oxygen exposure. Therefore, the effective atomic oxygen fluence for silicones in a ground-test facility should not be determined on the basis of traditional mass-loss measurements, as it is with polymers that erode. Another method for determining effective fluence needs to be employed for silicones. A new technique has been developed at the NASA Glenn Research Center for determining the effective atomic oxygen fluence for silicones in ground-test facilities. This technique determines the equivalent amount of atomic oxygen oxidation on the basis of changes in the surface-oxide hardness. The specific approach developed was to compare changes in the surface hardness of ground-laboratory-exposed DC93-500 silicone with DC93-500 exposed to LEO atomic oxygen as part of a shuttle flight experiment. The on-the-ground to in-space effective atomic oxygen fluence was determined on the basis of the Kapton effective fluence in the ground-laboratory facility that produced the same hardness for the fluence in space.

deGroh, Kim K.↗
DOE OSTI2020

Si-based materials for lithium-ion batteries I: Surface-modified Si/C powder

X-ray photoelectron spectroscopy was used to analyze Si/C powder obtained from Paraclete Energy, Inc. The spectra were obtained using incident monochromatic Al K α radiation at 1486.6 eV (0.834 01 nm). An initial survey spectrum together with O 1s, C 1s, and Si 2p are presented. A final survey spectrum was collected to ascertain the amount of beam-induced damage, which appears to be minimal. Finally, the spectra indicate the principal core level photoelectron and Auger electron signals and show the expected silicon-carbon species related to the surface modification process in addition to oxidized carbon and silicon due to atmospheric exposure.

25 ENERGY STORAGE↗
DOE OSTI2020

Si-based materials for lithium-ion batteries II. Surface-modified Si/C/polyethylene glycol powder

X-ray photoelectron spectroscopy was used to analyze Si/C/polyethylene glycol powder obtained from Paraclete Energy, Inc. The spectra were obtained using incident monochromatic Al K α radiation at 1486.6 eV (0.834 01 nm). An initial survey spectrum together with O 1s, C 1s, and Si 2p are presented. A final survey spectrum was collected to ascertain the amount of beam-induced damage, which appears to be minimal. Finally, the spectra indicate the principal core level photoelectron and Auger electron signals, with only minor calcium and nitrogen signal, and show the expected silicon-carbon species related to the surface modification process in addition to oxidized carbon and silicon due to atmospheric exposure.

25 ENERGY STORAGE↗
DOE OSTI2020

Si-based materials for lithium-ion batteries III: Surface-modified Si/C/polyvinylidine difluoride powder

X-ray photoelectron spectroscopy was used to analyze Si/C/polyvinylidine difluoride powder obtained from Paraclete Energy Inc. The spectra were obtained using incident monochromatic Al K α radiation at 1486.6 eV (0.834 01 nm). An initial survey spectrum together with F 1s, O 1s, C 1s, and Si 2p are presented. A final survey spectrum was collected to ascertain the amount of beam-induced damage, which appears to be minimal. Finally, the spectra indicate the principal core level photoelectron and Auger electron signals with only minor nitrogen signal and show the expected silicon-carbon and silicon-fluorine species related to the surface modification process in addition to oxidized carbon and silicon due to atmospheric exposure.

25 ENERGY STORAGE↗