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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 469 records · Page 26
All sourcesNASA NTRSDOE OSTI
NASA NTRS1980

Conceptual design study of concentrator enhanced solar arrays for space applications. Performance evaluation of 5 KW and 20 KW systems in Si and GaAs at 1 AU employing a flat plate trough concentrator

A simple, efficient and very lightweight preliminary design for a 5 KW and 20 KW BOL output concentrated array evolved and is described by drawings. The relative effectiveness of this design, as compared to an unconcentrated planar array of equal power output, was measured by comparing power to mass performance of and the solar cell area required by each. Improvements in power to mass performance as high as 42% together with array area size reduction of 57% are possible in GaAs systems. By contrast, when the same concentrator design is applied to silicon systems, no improvement in power to mass can be obtained although array area reductions as high as 35% are obtainable.

Source record↗
NASA NTRS1983

Si:Bi switched photoconducttor infrared detector array

A multiplexed infrared detector array is described. The small demonstration prototype consisted of two cryogenically cooled, bismuth doped silicon, extrinsic photoconductor pixels multiplexed onto a single output channel using an on focal plane switch integration sampling technique. Noise levels of the order of 400 to 600 rms electrons per sample were demonstrated for this chip and wire hybrid version.

Eakin, C. E.↗
NASA NTRS1983

Techniques for improving the Si-SiO2 interface characterization

The two techniques which have provided most of the information on interface states in MIS-C (metal-insulator-semiconductor-capacitor) structures are the 'quasi-static method' and the 'conductance method'. Sher et al. (1979) and Su et al. (1980) have suggested a number of improvements concerning these methods. The present investigation has the objective to extend the earlier results and to offer a new tentative interpretation of the data. A critical review is conducted of the data collection and reduction techniques for the quasi-static method, taking into account the sample, the quasi-static capacitance, and the surface potential. In connection with a discussion of the conductance method, attention is given to parallel conductance and capacitance measurements, interface-state densities, time constants, and measurements on a (110) surface orientation.

Sher, A.↗
NASA NTRS1984

Radial SI latches vibration test data review

Dynamic testing of the Space Telescope Scientific Instrument Radial Latches was performed as specified by the designated test criteria. No structural failures were observed during the test. The alignment stability of the instrument simulator was within required tolerances after testing. Particulates were discovered around the latch bases, after testing, due to wearing at the B and C latch interface surfaces. This report covers criteria derivation, testing, and test results.

Harrison, P. M.↗
NASA NTRS1984

The friction behavior of semiconductors Si and GaAs in contact with pure metals

The friction behavior of the semiconductors silicon and gallium arsenide in contact with pure metals was studied. Five transition and two nontransition metals, titanium, tantalum, nickel, palladium, platinum, copper, and silver, slid on a single crystal silicon (111) surface. Four metals, indium, nickel, copper and silver, slid on a single crystal gallium arsenide (100) surface. Experiments were conducted in room air and in a vacuum of 10 to the minus 7th power N/sq cm (10 to the minus 9th power torr). The results indicate that the sliding of silicon on the transition metals exhibits relatively higher friction than for the nontransition metals in contact with silicon. There is a clear correlation between friction and Schottky barrier height formed at the metal silicon interface for the transition metals. Transition metals with a higher barrier height on silicon had a lower friction. The same effect of barrier height was found for the friction of gallium arsenide in contact with metals.

Mishina, H.↗
NASA NTRS1984

Carbides in iron-rich Fe-Mn-Cr-Mo-Al-Si-C systems

The optimization of high carbon iron-base superalloy properties with duplex microstructure gamma + M7C3 carbide requires analysis in the context of a seven-component system. Data are first provided here for the Fe-Mn-Cr-Mo-C quinary system, at 30 at. pct carbon. A characterization of competing carbides, according to a pseudoternary phase diagram at 35 wt pct iron, is made from isothermal sections. It is noted that while M7C3 and M3C carbides' occurrences are respectively favored at the Cr and Mn corners, the M2C carbide and molybdenum cementite are predominant with increasing amounts of Mo. Lattice parameters are reported for the various carbides.

Lemkey, F. D.↗
NASA NTRS1984

Detection of narrow C 4 and Si 4 absorption features in spectra of stars within 200 pc f the Sun

Detection of narrow (Beta lambda 0.5 A) absorption features in C 4 at lambda lambda 1548 and 1550 have been made in the spectra of 4 late B dwarfs within 200 pc of the Sun; the Si4 doublet at lambda lambda 1393 and 1403 shows up in two of them. It is argued that it is difficult to account for the strengths, widths, shapes, and C IV/Si IV ratios in terms consistent with a circumstellar origin except possibly for an asymmetric C IV component in one star (HD 185037). The most probable source is semi-torrid gas in the 50,000 K range forming the interfaces between cooler H 1 clouds and the ambient medium at coronal temperatures. Late B rapid rotators are used for local interstellar medium probing of this kind.

Molaro, P.↗
NASA NTRS1983

Silicon superlattices. 2: Si-Ge heterostructures and MOS systems

Five main areas were examined: (1) the valence-and conduction-band-edge electronic structure of the thin layer ( 11 A) silicon-superlattice systems; (2) extension of thin-layer calculations to layers of thickness 11 A, where most potential experimental interest lies; (3) the electronic structure of thicker-layer (11 to 110 A) silicon superlattices; (4) preliminary calculations of impurity-scattering-limited electron mobility in the thicker-layer superlattices; and (5) production of the fine metal lines that would be required to produce on MOS superlattice.

Moriarty, J. A.↗
NASA NTRS1985

The mean ionic charges of N, Ne, MG, SI and S in solar energetic particle events

The mean ionic charges of nitrogen, neon, magnesium, silicon, and sulfur in solar flare particle events were determined for 12 flares during the time interval from September 1978 to September 1979. The observations were carried out with the MPI/UoMd ULEZEQ Sensor on the ISEE-3 satellite comparing the results with mean charge states established in a hot coronal plasma under equilibrium conditions, different temperatures for different elements are discussed. These range from approx. 2 million K to 7 million K in a single flare. From flare to flare the variation in temperature for each element is less than the variation between different ion species.

Luhn, A.↗
NASA NTRS1984

Demonstration of a silicon nitride attrition mill for production of fine pure Si and Si3N4 powders

To avoid metallic impurities normally introduced by milling ceramic powders in conventional steel hardware, an attrition mill (high-energy stirred ball mill) was constructed with the wearing parts (mill body, stirring arms, and media) made from silicon nitride. Commercial silicon and Si3N4 powders were milled to fine uniform particles with only minimal contamination - primarily from wear of the sintered Si3N4 media.

Herbell, T. P.↗
NASA NTRS1984

Lifetimes in Si CVD-epitaxial and other layers determined by spectral LBIC

In an effort to evaluate the minority carrier lifetimes in CVD-epitaxially grown layers in their dependence on the CVD process variables, the absolute spectral LBIC method was found to be the only available method capable of yielding both lifetime and surface recombination velocity in layers, independent of the resistivity of this layer or that of the substrate, as long as they are separated by a pn-junction. With this method, it was not only possible to determine the minority carrier lifetimes in as-grown epi-layers, but to observe their changes through the device fabrication processes. In addition, it was possible for the first time to determine the lifetimes in the alloy-regrowth p(+) layers of base high/low junction structures.

Wolf, M.↗
NASA NTRS1984

Computer modeling results on all-Si cascade solar cells

The properties of a cascade solar cell made entirely of silicon are investigated numerically with the goal of developing an optimal silicon solar cell grown by molecular-beam epitaxy. The cascade cell is modeled as two standard back-surface field cells with abrupt junctions connected by a tunnel junction. A cascade cell would have approximately twice the open-circuit voltage of a single cell. If the minority carriers generated in the front cell can be reflected before reaching the tunnel junction, then the cascade cell will show an increase in efficiency over a single cell by a percentage point.

Sparks, P. D.↗
NASA NTRS1985

I-V-T analysis of radiation damage in high efficiency Si solar cells

A detailed analysis of current-voltage characteristics of N(+)-P/P solar cells indicate that there is a combination of different mechanisms which results in an enhancement in the dark current and in turn deteriorates the photovoltaic performance of the solar cells after 1 MeV e(-) irradiation. The increase in the dark current is due to three effects, i.e., bulk recombination, space charge recombination by deep traps and space charge recombination through shallow traps. It is shown that the increase in bulk recombination current is about 2 to 3 orders of magnitude whereas space charge recombination current due to shallow traps increases only by an order or so and no space charge recombination through deep traps was observed after irradiation. Thus, in order to improve the radiation hardness of these devices, bulk properties should be preserved.

Banerjee, S.↗
NASA NTRS1986

Development of InSb and Si:Ga arrays for ISO camera

The Infrared Space Observatory (ISO) satellite will contain a 60 cm telescope. A 4 faces pyramid mirror feeds each experiment with a 3 arc minute part of the telescope field of view. The camera system is described. The arrays for the 3 to 5 and 5 to 17 micron channel are also discussed.

Sibille, F.↗
NASA NTRS1986

Si:As BIB detector arrays

Highlights of the results obtained on arsenic-doped silicon blocked impurity band (BIB) detectors and arrays since the invention of the BIB concept a few years ago are presented. After a brief introduction and a description of the BIB concept, data will be given on single detector performance. Then different arrays that were fabricated will be described and test data presented.

Bharat, R.↗
NASA NTRS1986

Evaluation of a Si:Ga direct readout array

Preliminary results from the Hughes 58 x 62 gallium-doped silicon infrared array are presented. The device functioned predictably and repeatedly at the low temperatures for the Space Infrared Telescope Facility (SIRTF). Power dissipation was reduced to acceptable levels while still maintaining the device speed. The infrared response was excellent and the degree of anomalous effects was compatible to conventional photoconductors.

Lamb, G. M.↗
NASA NTRS1987

Hot corrosion attack and strength degradation of SiC and Si(sub)3N(sub)4

Thin films of Na2SO4 and Na2CO3 molten salt deposits were used to corrode sintered SiC and Si3N4 at 1000 C. The resulting attack produced pitting and grain boundary etching resulting in strength decreases ranging from 15 to 50 percent. Corrosion pits were the predominant sources of fracture. The degree of strength decrease was found to be roughly correlated with the depth of the pit, as predicted from fracture toughness considerations. Gas evolution and bubble formation were key aspects of pit formation. Many of the observations of furnace exposures held true in a more realistic burner rig test.

Smialek, James L.↗