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Results for “RF superconductivity”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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455 records · Page 26
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Hybrid semiconductor-piezoacoustic radiofrequency device

An amplifying radiofrequency device includes a piezoelectric film and a semiconductor amplifier layer. The piezoelectric film is conformed as an acoustic waveguide. The piezoelectric film has a principal acoustic propagation direction parallel to the principal conduction direction of the amplifier layer. Interdigitated transducers are positioned on the piezoelectric film to respectively launch an acoustic wave in response to an input RF signal, and transduce the acoustic wave back to an output RF signal. There is a distance of less than the acoustic wavelength between the semiconductor amplifier layer and the piezoelectric film. The piezoelectric film has a thickness of less than the acoustic wavelength. According to a method for making such a device, a stack of III-V layers is epitaxially grown on a III-V substrate, wherein the stack comprises a first etch stop layer, a second etch stop layer, an amplifier layer, and a contact layer. The stack is bonded to a lithium niobate film. The III-V substrate is removed by etching down to the first etch stop layer. Deposition windows are opened by etching from the first etch stop layer down to the contact layer. Metal contact electrodes are deposited in the deposition windows.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Tailoring Growth Interfaces of Virtual Substrates for Power Electronics

Power electronics materials are poised to play a critical role in fulfilling next generation energy needs, with up to 90% of future energy demand predicted to flow through power electronics at some point.[1] Among a number of candidate materials, AlxGa1-xN is the strongest, having bipolar dopability, thermal and chemical stability, an ultra-wide bandgap, and demonstrated experimental feasibility. However, AlGaN growth is limited by a lack of lattice-matched substrates, ultimately stunting material quality at higher thicknesses needed for power electronics applications. Further, high power applications increasingly call for fully vertical device structures, necessitating a conductive substrate. [1] Recently our group identified the (111) plane of TaC as a conductive surface lattice-matched to Al0.55Ga0.45N, taking inspiration from prior work of AlN and GaN binaries on carbide and boride substrates. [2,3,4] In this talk we demonstrate the growth of (111)-oriented TaC by RF sputtering. We investigate the interface of TaC with sapphire and SiC substrates and identify means to suppress competing Ta2C nucleation in order to stabilize (111)-oriented TaC. Potential stacking sequences are identified with respect to crystal structure and observed twinning in the TaC films. We next assess structural changes and film recrystallization that results from face-to-face annealing of TaC thin films at high temperatures above 1500 degrees Celsius. Changes to grain structure and domain size are assessed by x-ray diffraction and surface morphology is explored using atomic force microscopy. Figure 1 shows significant improvements to in- and out-of-plane strain following annealing along with the formation of terraced step edges at the film surface. Strain as a function of material composition and thickness is considered, as this may play a major role in future nucleation of AlGaN layers.

CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SU↗
DOE OSTI2020

Tunable semiconductor laser with two acousto-optic tunable filters in its external cavity

We report a laser with a linear external cavity containing a near-IR injection semiconductor optical amplifier as a gain element and two acousto-optic tunable filters (AOTFs) with quasi-collinear interaction of acoustic and light waves. At identical frequencies of RF signals that control the filters and ensure compensation for the Doppler frequency shift of light passing through the AOTFs, the steady-state laser emission linewidth can be reduced to about 25 MHz, which is almost three orders of magnitude smaller than that in the case of one filter (20 GHz). The position of the emission line, which remains narrow, slowly fluctuates within a spectral range about 3 GHz wide, which seems to be due to the large length of the external cavity and insufficient thermal stabilization of its components. This does not prevent us from obtaining light with a large coherence length. In emission wavelength sweep mode, the instantaneous emission linewidth increases with tuning rate, reaching 0.022 nm (8.8 GHz) at the highest tuning rate: 10{sup 4} nm s{sup −1}. In the case of automatic control over the output optical power at a level of 3 mW, the tuning range is 815 – 875 nm. Such instruments are of practical interest for optical coherence tomography, spectroscopy, optical metrology, and other application areas. (lasers)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

Electropolishing parameters study for surface smoothening of low-$\beta$650 MHz five-cell niobium superconducting radio frequency cavity

Electropolishing (EP) is applied to niobium (Nb) superconducting radio frequency (SRF) cavities, which are used in particle accelerators for their surface treatment. The EP process for 1.3 GHz cavities has been extensively studied earlier. In this work, a parametric study on EP of low-β (0.61) 650 MHz Nb SRF cavities (LB650), which will be used in pre-production cryomodule for proton improvement plan-II (PIP-II) linear accelerator, was conducted to determine adequate EP conditions for attaining a smooth surface of the cavities. EP performed with the standard parameters and an initial cathode (cathode-I) having a cathode surface area of ~5% of the cavity surface area yielded a rough equator surface of the cavity. The grain step height on the equator weld position was measured to be ~ 32 μm. The rough surface was attributed to preferential grain etching confirmed by a polarization curve showing a linear relationship between the EP current and voltage and the absence of the current plateau region. The cathode was modified to make its surface area twice that of cathode-I. The modified cathode (cathode-M) provided a current plateau region in the corresponding I-V curves measured at different cavity temperatures. The onset voltage for the plateau was found to be higher at higher cavity temperatures. Here this study revealed that even with cathode-M, the standard 18 V was low for EP of such large-sized cavities when the cavity temperature was 18 °C. EP performed at a higher voltage of 22–24.5 V with cathode-M yielded a smooth surface with a grain step height of only 0.6 μm. The applied EP conditions also improved removal uniformity along the cavity length. In contrast to the cavity treated with cathode-I, the cavities treated with cathode-M achieved a significantly higher accelerating gradient (E acc ) in vertical tests conducted in a cryostat at 2 K. The modified EP was found efficient to produce the cavities that achieved E acc of 22.4 MV/m, required by PIP II project in the baseline RF tests, to qualify for further surface processing used to enhance their quality factors.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2023

Status and future plans for C 3 R&D

C 3 is an opportunity to realize an e + e - collider for the study of the Higgs boson at √s = 250 GeV, with a well defined upgrade path to 550 GeV while staying on the same short facility footprint. C 3 is based on a fundamentally new approach to normal conducting linear accelerators that achieves both high gradient and high efficiency at relatively low cost. Given the advanced state of linear collider designs, the key system that requires technical maturation for C 3 is the main linac. This paper presents the staged approach towards a facility to demonstrate C 3 technology with both Direct (source and main linac) and Parallel (beam delivery, damping ring, ancillary component) R&D. The primary goal of the C 3 Demonstration R&D Plan is to reduce technical and cost risk by building and operating the key components of C 3 at an adequate scale. This R&D plan starts with the engineering design, and demonstration of one cryomodule and will culminate in the construction of a 3 cryomodule linac with pre-production prototypes. This R&D program would also demonstrate the linac rf fundamentals including achievable gradient and gradient stability over a full electron bunch train and breakdown rates. It will also investigate beam dynamics including energy spread, wakefields, and emittance growth. This work will be critical to confirm the suitability of the C 3 beam parameters for the physics reach and detector performance in preparation for a Conceptual Design Report (CDR), as well as for follow-on technology development and industrialization. The C 3 Demonstration R&D Plan will open up significant new scientific and technical opportunities based on development of high-gradient and high-efficiency accelerator technology. It will push this technology to operate both at the GeV scale and mature the technology to be reliable and provide high-brightness electron beams. The timeline for progressing with C 3 technology development will be governed by practical limitations on both the technical progress and resource availability. It consists of four stages: Stage 0) Ongoing fundamental R&D on structure prototypes, damping and vibrations. Stage 1) Advancing the engineering maturity of the design and developing start-to-end simulations including space-charge and wakefield effects. This stage will include testing of strucutres operating at cryogenic temperatures. Beam tests would be performed with high beam current to test full beam loading. Stage 2) Production and testing of the first cryomodule at cryogenic temperatures. This would provide sufficient experimental data to compile a CDR and it is anticipated for Stage 2 to last 3 years and to culminate with the transport of photo-electrons through the first cryomodule. Stage 3) Updates to the engineering design of the cryomodules, production of the second and third cryomodule and their installation. Lower charge and lower emittance beams will be used to investigate emittance growth. The successful full demonstration of the 3 cryomodules to deliver up to a 3 GeV beam and achieve the C 3 five gradient will allow a comprehensive and robust evaluation of the technical design of C 3 as well as mitigate technical, schedule, and cost risks required to proceed with a Technical Design Report (TDR).

radiation hardened magnets↗