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At least 469 records · Page 26

Review of magnetoacoustic residual stress measurement technique for iron-like ferromagnetic alloys

It is shown that the elastic moduli of ironlike ferromagnetics depends explicitly on the state of 90 deg domain walls: the more 90 deg domain wall area available, the lower the elastic modulus. New experimental results obtained for three types of carbon and pure iron samples are presented. The magnetoacoustic response due to magnetization perpendicular to the uniaxial stress axis is considered as well as the magnetoacoustic response due to magnetization parallel to the uniaxial stress axis.

Namkung, M.↗

Development of a Novel Method for Determination of Residual Stresses in a Friction Stir Weld

Material constitutive properties, which describe the mechanical behavior of a material under loading, are vital to the design and implementation of engineering materials. For homogeneous materials, the standard process for determining these properties is the tensile test, which is used to measure the material stress-strain response. However, a majority of the applications for engineering materials involve the use of heterogeneous materials and structures (i.e. alloys, welded components) that exhibit heterogeneity on a global or local level. Regardless of the scale of heterogeneity, the overall response of the material or structure is dependent on the response of each of the constituents. Therefore, in order to produce materials and structures that perform in the best possible manner, the properties of the constituents that make up the heterogeneous material must be thoroughly examined. When materials exhibit heterogeneity on a local level, such as in alloys or particle/matrix composites, they are often treated as statistically homogenous and the resulting 'effective' properties may be determined through homogenization techniques. In the case of globally heterogeneous materials, such as weldments, the standard tensile test provides the global response but no information on what is Occurring locally within the different constituents. This information is necessary to improve the material processing as well as the end product.

Reynolds, Anthony P.↗

Fluorine Implantation and Residual Stresses in Polysilicon Films

As microelectronic device dimensions are reduced below one micron, the hot carrier effect is a major barrier to continued scaling and VLSI reliability. Several reports have shown that fluorine diffusion into the device gate greatly enhances the resistance to hot carriers. There has been some disagreement as to the mechanism of influence; however, several reports have suggested that the polysilicon is physically modified by the fluorine implant and that the beneficial effects are at least in part due to stress relaxation in the polysilicon.

polysilicon fluorine microelectronic devices hot c↗