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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 469 records · Page 26
All sourcesNASA NTRSDOE OSTI
NASA NTRS1986

Theoretical and experimental considerations for high silicon solar cell performance

This paper reviews ongoing research aimed at the attainment of highly efficient silicon solar cells. The importance of low-recombination highly-doped n(+) and p(+) regions and the manner in which such regions are fabricated are discussed. Theoretical light-trapping considerations are combined with experimental reflectance data to show that high quantum efficiency may be obtained from thin (100-micron) cells. The principal finding of this work is that thin solar cells with conversion efficiencies of over 20 percent may be fabricated if recombination at the front and back metal/silicon interfaces is reduced. Large-area cells (53 sq cm) with an efficiency of 18 percent are reported.

Spitzer, M. B.↗
NASA NTRS1996

Generation of Antibunched Light by Excited Molecules in a Microcavity Trap

The active microcavity is adopted as an efficient source of non-classical light. By this device, excited by a mode-locked laser at a rate of 100 MHz, single-photons are generated over a single field mode with a nonclassical sub-poissonian distribution. The process of adiabatic recycling within a multi-step Franck-Condon molecular optical-pumping mechanism, characterized in our case by a quantum efficiency very close to one, implies a pump self-regularization process leading to a striking n-squeezing effect. By a replication of the basic single-atom excitation process a beam of quantum photon (Fock states) can be created. The new process represents a significant advance in the modern fields of basic quantum-mechanical investigation, quantum communication and quantum cryptography.

DeMartini, F.↗
NASA NTRS1981

Solar-pumped gas laser development

The direct conversion of solar radiation into an inverted population for extraction in an optical cavity holds promise as a relatively simple system design. Broad-band photoabsorption in the visible or near-UV range is required to excite large volumes of gas and to ensure good solar absorption efficiency. The state excited must be a metastable state which is not quenched by the parent gas. The emission bandwidth must be less than approximately 10 A. The system should show chemical reversibility and an insensitivity to increasing temperature. Other properties such as good quantum efficiency and kinetic efficiency are also implied. A search of electronic-vibrational transitions in diatomic molecules satisfying these conditions is now in progress. A photodissociation-pumped atomic iodine laser is now being tested under solar pumping conditions. Photodissociation studies for thallium spin-flip metastable formation will begin in the near future.

Wilson, J. W.↗
DOE OSTI2020

Mechanistic Understanding and Rational Design of Quantum Dot/Mediator Interfaces for Efficient Photon Upconversion

The semiconductor-nanocrystal-sensitized, three-component upconversion system has made great strides over the past 5 years. The three components (i.e., triplet photosensitizer, mediator, and emitter) each play critical roles in determining the input and output photon energy and overall quantum efficiency (QE). The nanocrystal photosensitizer converts the absorbed photon into singlet excitons and then triplet excitons via intersystem crossing. The mediator accepts the triplet exciton via either direct Dexter-type triplet energy transfer (TET) or sequential charge transfer (CT) while extending the exciton lifetime. Through a second triplet energy-transfer step from the mediator to the emitter, the latter is populated in its lowest excited triplet state. Triplet–triplet annihilation (TTA) between two triplet emitters generates the emitter in its bright singlet state, which then emits the upconverted photon. Quantum dots (QD) have a tunable band gap, large extinction coefficient, and small singlet–triplet energy losses compared to metal–ligand charge-transfer complexes. This high triplet exciton yield makes QDs good candidates for photosensitizers. In terms of driving triplet energy transfer, the triplet energy of the mediator should be slightly lower than the triplet exciton energy of the QD sensitizer for a downhill energy landscape with minimal energy loss. The same energy cascade is also required for the transfer from the mediator to the emitter. Lastly, the triplet energy of the emitter must be slightly larger than one-half of its singlet energy to ensure that TTA is exothermic. Optimization of the sensitizer, mediator, and emitter will lead to an increase in the anti-Stokes shift and the total quantum efficiency. Evaluating each individual step’s efficiency and kinetics is necessary for the understanding of the limiting factors in existing systems.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2026

Plasmons Enable Ultralow Threshold Solid-State Triplet Fusion Upconversion with a 2D Sensitizer

Solid-state triplet−triplet annihilation (TTA) upconversion has significant potential for application in light harvesting, optoelectronic devices, and bioimaging. However, the high optical powers required to achieve efficient upconversion have inhibited its adoption. In this work, we demonstrate plasmon-enhanced near-infrared (NIR)-to-blue TTA upconversion in a monolayer WSe2/organic heterojunction. Under far-field excitation, the device reaches a threshold of 19 mW/cm 2 and an external quantum efficiency (EQE) of 0.17% with an anti-Stokes shift of 1.1 eV. Plasmon excitation lowers the threshold to 0.9 mW/cm 2 and improves the EQE to 3.6%. We attribute the plasmon enhancement to surface plasmon polariton (SPP) near-field enhancement and dark-exciton absorption. Optimization of the WSe 2 transfer process is identified as a key factor for the device performance. This work demonstrates that plasmon excitation overcomes the low far-field absorption of 2D transition-metal dichalcogenide (TMD) sensitizers. Consequently, monolayer TMDs can achieve solid-state upconversion with a performance among the best reported.

2D materials↗
NASA NTRS2012

The Design and Performance of IceCube DeepCore

The IceCube neutrino observatory in operation at the South Pole, Antarctica, comprises three distinct components: a large buried array for ultrahigh energy neutrino detection, a surface air shower array, and a new buried component called DeepCore. DeepCore was designed to lower the IceCube neutrino energy threshold by over an order of magnitude, to energies as low as about 10 GeV. DeepCore is situated primarily 2100 m below the surface of the icecap at the South Pole, at the bottom center of the existing IceCube array, and began taking pbysics data in May 2010. Its location takes advantage of the exceptionally clear ice at those depths and allows it to use the surrounding IceCube detector as a highly efficient active veto against the principal background of downward-going muons produced in cosmic-ray air showers. DeepCore has a module density roughly five times higher than that of the standard IceCube array, and uses photomultiplier tubes with a new photocathode featuring a quantum efficiency about 35% higher than standard IceCube PMTs. Taken together, these features of DeepCore will increase IceCube's sensitivity to neutrinos from WIMP dark matter annihilations, atmospheric neutrino oscillations, galactic supernova neutrinos, and point sources of neutrinos in the northern and southern skies. In this paper we describe the design and initial performance of DeepCore.

Stamatikos, M.↗
DOE OSTI2020

High Performance Green LEDs for Solid State Lighting

The development of white LEDs for solid state lighting (SSL) has been driven in recent years by phosphor converted LEDs (pc-LEDs). However, losses (known as Stokes’ losses) between the blue pump LED and phosphor impose a fundamental efficiency limit of ~300 lm/W on pc-LEDs. White light can also be generated from color mixed LEDs (cm-LEDs), which employ red, green, blue, and amber LEDs and have a fundamental efficiency limit of ~400 lm/W. Efficient group III-nitride materials are used for the blue LED, while efficient group III-phosphide materials are used for the red LED component. Currently, the poor efficiency of green and amber LEDs (i.e. the “green gap”) is the primary limitation for cm-LEDs. Relative to nitride-based blue LEDs, green and amber nitride LEDs suffer from lower radiative recombination rates and higher nonradiative recombination rates, which ultimately lead to reduced internal quantum efficiency (IQE). The IQE represents the portion of all electron-hole recombination events that result in a photon. In addition, long-wavelength LEDs have lower electrical efficiency (EE) compared to their blue counterparts. Addressing the green gap, would ultimately enable cm-LEDs that rival or exceed the performance of pc-LEDs. Our project focused on III-nitride materials growth and characterization, device fabrication and testing, and semiconductor physics to understand efficiency limitations of green LEDs and develop solutions to these challenges. Insights gained during our research has led to novel long-wavelength LED designs which will enable efficient solid-state lighting.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2020

Giant defect emission enhancement from ZnO nanowires through desulfurization process

Zinc oxide (ZnO) is a stable, direct bandgap semiconductor emitting in the UV with a multitude of technical applications. It is well known that ZnO emission can be shifted into the green for visible light applications through the introduction of defects. However, generating consistent and efficient green emission through this process is challenging, particularly given that the chemical or atomic origin of the green emission in ZnO is still under debate. In this work we present a new method, for which we coin term desulfurization, for creating green emitting ZnO with significantly enhanced quantum efficiency. Solution grown ZnO nanowires are partially converted to ZnS, then desulfurized back to ZnO, resulting in a highly controlled concentration of oxygen defects as determined by X-ray photoelectron spectroscopy and electron paramagnetic resonance. Using this controlled placement of oxygen vacancies we observe a greater than 40-fold enhancement of integrated emission intensity and explore the nature of this enhancement through low temperature photoluminescence experiments.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Variations of light emission and carrier dynamics around V-defects in InGaN quantum wells

Time- and spectrally-resolved scanning near-field optical microscopy was applied to study spatial variations of photoluminescence (PL) spectra and carrier dynamics in polar InGaN/GaN single quantum wells (QWs) emitting from 410 nm to 570 nm. The main attention was devoted to variations of PL properties and carrier dynamics around V-defects. The PL intensity, peak wavelength, and linewidth, as well as the radiative and nonradiative recombination times, were found to be different in V-defect-rich and defect-free regions. The radiative lifetime close to the defects was longer up to several times, which is attributed to an increased electron and hole wave function separation in the QW plane. PL decay times, measured using excitation and collection through the near-field probe, were one to two orders of magnitude shorter than PL decay times measured in the far field. This shows that the near-field PL decay and the integrated PL intensity are primarily determined by the carrier out-diffusion from under the probe. Only in the immediate vicinity of the V-defects, the near-field PL decays due to the nonradiative recombination at dislocations. The area of such enhanced nonradiative recombination is limited to just a few percent of the total QW area. This shows that recombination via dislocations and V-defects does not play a decisive role in the overall nonradiative recombination and internal quantum efficiency of polar InGaN/GaN QWs.

36 MATERIALS SCIENCE↗
NASA NTRS2004

Inter-Valence-Subband/Conduction-Band-Transport IR Detectors

Infrared (IR) detectors characterized by a combination of (1) high-quantum-efficiency photoexcitation of inter-valence-subband transitions of charge carriers and (2) high-mobility conduction- band transport of the thus-excited charge carriers have been proposed in an effort to develop focal-plane arrays of such devices for infrared imaging. Like many prior quantum-well infrared photodetectors (QWIPs), the proposed devices would be made from semiconductor heterostructures. In order to obtain the combination of characteristics mentioned above, the proposed devices would be designed and fabricated in novel InAs/GaSb superlattice configurations that would exploit a phenomenon known in the semiconductor art as type-II broken-gap band offset.

Ting, David↗
NASA NTRS2007

Tunable Antireflection Layers for Planar Bolometer Arrays

It remains a challenge to obtain high-efficiency coupling of far-infrared through millimeter radiation to large-format detector arrays. The conventional approach of increasing detector coupling is to use reflective backshorts. However, this approach often results in excessive systematic errors resulting from reflections off the backshort edge. An alternate approach to both increasing quantum efficiency and reducing systematics associated with stray light is to place an antireflective coating near the front surface of the array. When incorporated with a resistive layer and placed behind the detector focal plane, the AR coating can serve to prevent optical ghosting by capturing radiation transmitted through the detector. By etching a hexagonal pattern in silicon, in which the sizes of the hexes are smaller than the wavelength of incident radiation, it is possible to fabricate a material that has a controllable dielectric constant, thereby allowing for simple tunable optical device fabrication. To this end, we have fabricated and tested tunable silicon "honeycomb" AR layers and AR/resistive layer devices. These devices were fabricated entirely out of silicon in order to eliminate problems associated with differential contraction upon detector cooling.

Brown, Ari-David↗
NASA NTRS1988

Direct-current magnetron fabrication of indium tin oxide/InP solar cells

Efficient solar cells of indium tin oxide (ITO)/InP have been fabricated using dc magnetron deposition of the ITO into single-crystal InP substrates. Efficiencies of over 16.5 percent have been achieved, the highest ever recorded for devices of this construction. The results of studies of the annealing behavior of the cells and observations of interfacial changes using Raman spectroscopy and secondary ion mass spectroscopy, together with measurements of light and dark current/voltage and quantum efficiency characteristics, are used to model the behavior of the cells and explain their lack of sensitivity to fabrication conditions.

Coutts, T. J.↗
NASA NTRS1995

Low Intensity Low Temperature (LILT) measurements and coefficients on new photovoltaic structures

Past NASA missions to Mars, Jupiter, and the outer planets were powered by radioisotope thermal generators (RTG's). Although these devices proved to be reliable, their high cost and highly toxic radioactive heat source has made them far less desirable for future planetary missions. This has resulted in a renewed search for alternate energy sources, some of them being photovoltaic (PV) and thermophotovoltaic (TPV). Both of these alternate energy sources convert light/thermal energy directly into electricity. In order to create a viable PV and TPV data base for planetary mission planners and cell designers, we have compiled low temperature low intensity (LILT) I-V data on single junction and multi-junction high efficiency solar cells. The cells tested here represent the latest photovoltaic technology. Using this LILT data to calculate dI(sub SC)/dT, dV(sub OC)/dT, dFF/dT, and also as a function of intensity, an accurate prediction of cell performance under the AMO spectrum can be determined. When combined with QUantum efficiency at Low Temperature (QULT) data, one can further enhance the data by adding spectral variations to the measurements. This paper presents an overview of LILT measurements and is only intended to be used as a guideline for material selection and performance predictions. As single junction and multi-junction cell technologies emerge, new test data must be collected. Cell materials included are Si, GaAs/Ge, GainP/GaAs/Ge, InP, InGaAs/InP, InP/InGaAs/InP, and GainP. Temperatures range as low as -175 C and intensities range from 1 sun to .02 suns.

Schelman, David A.↗
DOE OSTI2024

Limitations for Quantum Algorithms to Solve Turbulent and Chaotic Systems

We investigate the limitations of quantum computers for solving nonlinear dynamical systems. In particular, we tighten the worst-case bounds of the quantum Carleman linearisation (QCL) algorithm answering one of their open questions. We provide a further significant limitation for any quantum algorithm that aims to output a quantum state that approximates the normalized solution vector. Given a natural choice of coordinates for a dynamical system with one or more positive Lyapunov exponents and solutions that grow sub-exponentially, we prove that any such algorithm has complexity scaling at least exponentially in the integration time. As such, an efficient quantum algorithm for simulating chaotic systems or regimes is likely not possible.

97 MATHEMATICS AND COMPUTING↗
NASA NTRS2000

High Energy Directly Pumped Ho:YLF Laser

The most commonly used crystal architecture to produce 2 micrometer laser is co-doping Ho and Tm into a single host crystal. In this method, the stored energy transfer from the Tm (3)F4 to the Ho (5)I7 manifold is not fast enough to warrant high efficiency for short pulse applications. By separating the Ho and the Tm ions and doping the Tm in YALO3 and the Ho in YLF, we were able to directly pump the Ho (5)I7 manifold with 1.94 micrometers. The Ho:YLF laser has produced 33 mJ at 2.062 micrometers with a quantum efficiency of 0.88. The performance of each laser will be presented.

Petros, Mulugeta↗
DOE OSTI2022

Donor End-Capped Alkyl Chain Length Dependent Non-Radiative Energy Loss in All-Small-Molecule Organic Solar Cells

A critical bottleneck for further efficiency breakthroughs in organic solar cells (OSCs) is to minimize the non-radiative energy loss (eΔV nr ) while maximizing the charge generation. With the development of highly emissive low-bandgap non-fullerene acceptors, the design of high-performance donors becomes critical to enable the blend with the electroluminescence quantum efficiency to approach or surpass the pristine acceptor. Herein, by shortening the end-capped alkyl chains of the small-molecular donors from hexyl (MPhS-C6) to ethyl (MPhS-C2), the material obtained aggregation that was insensitive to thermal annealing (TA) along with condensed packing simultaneously. The former leads to small phase separation and suppressed upshifts of the highest occupied molecular orbital energy level during TA, and the latter facilitates its efficient charge-transport at aggregation-less packing. Hence, the ΔV nr decreases from 0.242 to 0.182 V, from MPhS-C6 to MPhS-C2 based OSCs. An excellent PCE of 17.11% is obtained by 1,8-diiodoctane addition due to almost unchanged high J sc (26.6 mA cm –2 ) and V oc (0.888 V) with improved fill factor, which is the record efficiency with the smallest energy loss (0.497 eV) and ΔV nr (0.192 V) in all-small-molecule OSCs. Finally, these results emphasize the potential material design direction of obtaining concurrent TA-insensitive aggregation and condensed packing to maximize the device performances with a super low ΔV nr .

36 MATERIALS SCIENCE↗