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At least 469 records · Page 26

All sources NASA NTRS DOE OSTI

DOE OSTI2019

Intrinsic anisotropy versus effective pinning anisotropy in YBa 2 Cu 3 O 7 thin films and nanocomposites

The intrinsic and effective anisotropies, both in the liquid and solid vortex regimes, of YBa 2 Cu 3 O 7 (YBCO) pristine and nanocomposite thin films have been investigated in this paper. Angular resistivity measurements under varying fields and temperatures were performed to characterize the intrinsic vs effective anisotropy of samples in the regime of long-range vortex displacements. The effective anisotropy γ eff was determined from the scaling of the irreversibility line, applying the Blatter approach developed for uniaxial anisotropic superconductors. Resistive measurements in flux flow were utilized, in addition to H c2 measurements in ultrahigh-fields, to determine the intrinsic anisotropy mass γ , enabling the study of a large number of samples with varied nanoparticle compositions. In order to access the intrinsic anisotropy in the vortex solid phase, complex impedance measurements at high microwave frequencies were performed, allowing us to access the flux-flow intrinsic anisotropy in the regime of very short vortex oscillations within the pinning potential wells. Results show that while the effective anisotropy γ eff decays as the nanoparticles-induced nanostrain in the YBCO films increases, the intrinsic anisotropy γ (determined both in dc and at microwave frequency) remains unaltered.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2021

Experimental evidence that zinc impurities pin pair-density-wave order in La 2-x Ba x CuO 4

Both Zn doping and c-axis magnetic fields have been observed to increase the spin stripe order in La 2-x Ba x CuO 4 with x close to 1/8. For x = 0.095, the applied magnetic field also causes superconducting layers to decouple, presumably by favoring pair-density-wave order that consequently frustrates interlayer Josephson coupling. Here we show that introducing 1% Zn also leads to an initial onset of two-dimensional (2D) superconductivity, followed by 3D superconductivity at lower temperatures, even in zero field. Overall, we infer that the Zn pins pair-density-wave order locally, establishing the generality of such behavior.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2015

Domain pinning near a single-grain boundary in tetragonal and rhombohedral lead zirconate titanate films

The interaction of grain boundaries with ferroelectric domain walls strongly influences the extrinsic contribution to piezoelectric activity in Pb(Zr,Ti)O 3 (PZT), ubiquitous in modern transducers and actuators. However, the fundamental understanding of these phenomena has been limited by complex mechanisms originating from the interplay of atomic-level domain wall pinning, collective domain wall dynamics, and emergent mesoscopic behavior. This contribution utilizes engineered grain boundaries created by depositing epitaxial PZT films with various Zr:Ti ratio onto 24º SrTiO 3 tilt bicrystals. The nonlinear piezoelectric response and surface domain structure across the boundary are investigated using piezoresponse force microscopy whilst cross section domain structure is studied using transmission electron microscopy. The grain boundary reduces domain wall motion over a width of 800±70 nm for PZT 45:55 and 450±30 nm for PZT 52:48. Phase field modeling provides an understanding of the elastic and electric fields associated with the grain boundary and local domain configurations. In conclusion, this study demonstrates that complex mesoscopic behaviors can be explored to complement atomic-level pictures of the material system.

36 MATERIALS SCIENCE↗

DOE OSTI2018

Influence of multiband sign-changing superconductivity on vortex cores and vortex pinning in stoichiometric high- T c CaKFe 4 As 4

We use a scanning tunneling microscope to study the superconducting density of states and vortex lattice of single crystals of CaKFe 4 As 4 . This material has a critical temperature of T c = 35 K, one of the highest among stoichiometric iron based superconductors (FeBSCs), and is comparable to T c found near optimal doping in other FeBSCs. We observe quasiparticle scattering from defects with a pattern related to interband scattering between zone centered hole sheets. We measure the tunneling conductance in vortex cores and find a peak due to Caroli–de Gennes–Matricon bound states. The peak is located above the Fermi level, showing that CaKFe 4 As 4 is a clean superconductor with vortex core bound states close to the so-called extreme quantum limit. We identify locations where the superconducting order parameter is strongly suppressed due to pair breaking. Vortices are pinned at these locations, and the length scale of the suppression of the order parameter is of order of the vortex core size. Finally, as a consequence, the vortex lattice is disordered up to 8 T.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2017

Imaging the Impact of Proton Irradiation on Edge Terminations in Vertical GaN pin Diodes

Devices based on GaN have shown great promise for high power electronics, including their potential use as radiation tolerant components. An important step to realizing high power diodes is the design and implementation of an edge termination to mitigate field crowding, which can lead to premature breakdown. However, little is known about the effects of radiation on edge termination functionality. We experimentally examine the effects of proton irradiation on multiple field ring edge terminations in high power vertical GaN pin diodes using in operando imaging with electron beam induced current (EBIC). We find that exposure to proton irradiation influences field spreading in the edge termination as well as carrier transport near the anode. By using depth-dependent EBIC measurements of hole diffusion length in homoepitaxial n-GaN we demonstrate that the carrier transport effect is due to a reduction in hole diffusion length following proton irradiation.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

DOE OSTI2021

Carrier Diffusion Lengths in Continuously Grown and Etched-and-Regrown GaN Pin Diodes

Advanced GaN power devices are promising for many applications in high power electronics but performance limitations due to material quality in etched-and-regrown junctions prevent their widespread use. Carrier diffusion length is a critical parameter that not only determines device performance but is also a diagnostic of material quality. Here we present the use of electron-beam induced current to measure carrier diffusion lengths in continuously grown and etched-and-regrown GaN pin diodes as models for interfaces in more complex devices. Variations in the quality of the etched-and-regrown junctions are observed and shown to be due to the degradation of the n-type material. Finally, we observe an etched-and-regrown junction with properties comparable to a continuously grown junction.

42 ENGINEERING↗

DOE OSTI2013

Polaron-like vortices, dissociation transition, and self-induced pinning in magnetic superconductors

Vortices in magnetic superconductors polarize spins nonuniformly and repolarize them when moving. At a low spin relaxation rate and at low bias currents, vortices carrying magnetic polarization clouds become polaron-like and their velocities are determined by the effective drag coefficient that is significantly bigger than the Bardeen-Stephen (BS) one. As the current increases, vortices release polarization clouds and the velocity as well as the voltage in the I-V characteristics jump to values corresponding to the BS drag coefficient at a critical current J{sub c}. The nonuniform components of the magnetic field and magnetization drop as the velocity increases, resulting in weaker polarization and a discontinuous dynamic dissociation depinning transition. Experimentally, the jump shows up as a depinning transition and the corresponding current at the jump is the depinning current. As the current decreases, on the way back, vortices are retrapped by polarization clouds at the current J{sub r} < J{sub c}. As a result, the polaronic effect suppresses dissipation and enhances the critical current. Borocarbides (RE)Ni{sub 2}B{sub 2}C with a short penetration length and highly polarizable rare earth spins seem to be optimal systems for a detailed study of vortex polaron formation by measuring I-V characteristics. We also propose to use a superconductor-magnet multilayer structure to study polaronic mechanism of pinning with the goal to achieve high critical currents. The magnetic layers should have large magnetic susceptibility to enhance the coupling between vortices and magnetization in magnetic layers while the relaxation of the magnetization should be slow. For Nb and a proper magnet multilayer structure, we estimate the critical current density J{sub c} {approx} 10{sup 9} A/m{sup 2} at the magnetic field B Almost-Equal-To 1 T.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2016

Time-of-flight measurements of heavy ions using Si PIN diodes

A new off-line timing method for PIN diode signals is presented which allows the plasma delay effect to be suppressed. Velocities of heavy ions measured by the new method are in good agreement within a wide range of masses and energies with velocities measured by time stamp detectors based on microchannel plates.

74 ATOMIC AND MOLECULAR PHYSICS↗

DOE OSTI2016

Simulation of the β-voltaic effect in silicon pin structures irradiated with electrons from a nickel-63 β source

The prospects of β voltaics as electric-power sources for semiconductor circuits are considered. Experimental studies show that charging of the surface and a decrease in the electrovoltaic power are important. Simulation of the β-voltaic effect induced by electrons from a nickel-63 source on silicon pin structures is performed; it is shown that the coefficient of the collection of generated charge carriers can be as high as 13%. The dose dependences of the performance efficiency of silicon β-voltaic structures are determined for the case of irradiation with α particles and γ-ray photons; it is shown that 1.3 × 10{sup 14} and 10{sup 20} cm{sup –2}, respectively, are the threshold doses, above which a rapid decrease in efficiency occurs. The optimal parameters of microchannel structures in β-voltaic electronics, in which the width of the channels and the distance between them correspond to 3 and 10 μm, are determined.

36 MATERIALS SCIENCE↗

DOE OSTI2017

Pinning of domain walls in two-layer ferromagnetic nanowire with scattering fields of nanoparticles

The results of a micromagnetic simulation of the pinning-depinning processes of a domain wall (DW) in a rectangular ferromagnetic nanowire (NW) consisting of two magnetic layers with scattering fields of two rectangular two-layer nanoparticles (NPs) located on NW opposite sides and oriented perpendicular to its axis are presented. The features of magnetization reversal of this system in the external magnetic field are studied depending on direction of the magnetic moments of the nanoparticle layers. The value of the depinning field in such a system depends essentially on mutual orientation of NP magnetic moments and NW magnetization. The possibility to realize a magnetic logic cell performing the “conjunction” operation of ternary logic is discussed.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

DOE OSTI2022

Effect of Annealing Conditions on Recovery of Lattice Damage in a High-Energy-Implanted 4H-SiC Superjunction PIN Diode

A high energy ion implantation system has been recently developed at the Tandem Van de Graaff facility at Brookhaven National Laboratory with tunable energy to 150 MeV capable of multi-step, deep implantation in 4H-SiC wafers with dopant atoms, such as B, P, Al, and N. Medium and high voltage devices with deep junctions can be fabricated using this system. Lattice strain introduced by the implantation process needs to be recovered and dopant atoms activated by appropriate annealing process as the device performance is strongly associated with the extent of recovery of the lattice. Using Synchrotron X-ray Rocking Curve Topography (SXRCT) and Reciprocal Space Mapping (RSM), the strain induced by high energy implantation of Al and N in 4H-SiC in different patterns are measured and mapped. It is observed that the strain levels correlate with the total fluence levels. PiN diodes fabricated on these implanted wafers were then annealed at temperatures ranging from 1700 °C to 2000 °C for 60 min. The SXRCT and RSM analysis of the annealed samples suggests that for the same annealing duration, higher temperature leads to better lattice recovery.

43 PARTICLE ACCELERATORS↗

DOE OSTI2019

Bias Between ENDF/B-VIII and ENDF/B-VII.1 for LEU Pin Array Systems

Extensive testing of new cross section data is performed in SCALE prior to its release. The release of ENDF/B-VIII.0 requires the generation and testing of new data libraries which are planned to be included in the release of SCALE 6.3 in 2019 or 2020. KENO benchmark results have been published previously for beta and final releases of ENDF/B-VIII.0 using the entire Verified, Archived Library of Inputs and Data (VALID). This work presents an energy-dependent change in the results for low-enriched uranium (LEU) pin array systems. The process of identifying the difference is highlighted as a case study to determine how data testing and benchmarking can be performed to provide more detailed feedback to the data community on potential data deficiencies.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

DOE OSTI2014

On the Equivalence of Trapped Colloids, Pinned Vortices, and Spin Ice

We investigate the recently reported analogies between pinned vortices in nano-structured superconductors or colloids in optical traps, and spin ice materials. The frustration of the two models, one describing colloids and vortices, the other describing spin ice, differs essentially. However, their effective energetics is made identical by the contribution of an emergent field associated to a topological charge. This equivalence extends to the local low-energy dynamics of the ice manifold, yet breaks down in lattices of mixed coordination, because of topological charge transfer between sub-latices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2015

Pin diode calibration - beam overlap monitoring for low energy cooling

We were trying to address the question whether or not the Pin Diodes, currently installed approximately 1 meter downstream of the RHIC primary collimators, are suitable to monitor a recombination signal from the future RHIC low energy cooling section. A maximized recombination signal, with the Au+78 ions being lost on the collimator, will indicate optimal Au-electron beam overlap as well as velocity matching of the electron beam in the cooling section.

43 PARTICLE ACCELERATORS↗

DOE OSTI2018

Analysis of the IBL and LBNL irradiated PIN and PN diodes

This report is a follow-up to the previous report on the difference between high fluence, high and low flux irradiations. There was a discrepancy in the data for the LBNL irradiated S5821 PIN diodes. There were diodes irradiated in the two batches (high and low flux) with the same flux and fluence for reference (lell ions/cm 2 /shot and 5, 10, and 20 ions/cm 2 total flux). Although these diodes should have the same electrical characteristics their leakage currents were different by a factor of 5-6 (batch 2 was larger). Also, the C-V measurements showed drastically different results. It was speculated that these discrepancies were due to one of the following two reasons: 1. Different times elapsed between radiation and characterization. 2. Different areas were irradiated (roughly half of the diodes were covered during irradiation). To address the first concern, we annealed the devices according to the ASTM standard [1]. The differences remained the same. To determine the irradiated area, we performed large area IBIC scans on several devices. Error! Reference source not found. below shows the IBIC maps of two devices one from each batch. The irradiated areas are approximately the same.

42 ENGINEERING↗

DOE OSTI2022

PNNL FY2021 Sibling Pin Testing Results

The post-irradiation examination, axial tensile, burst, and four-point bend testing results of the first two sibling pins, 6U3/L8 and 5K7/P2 are presented.

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗

DOE OSTI2022

Full 3D Kinetic Modeling and Quantification of Positive Streamer Evolution in an Azimuthally Swept Pin-to-Plane Wedge Geometry

Cathode-directed streamer evolution in near atmospheric air is modeled in 3D pin-to-plane geometries using a 3D kinetic Particle-In-Cell (PIC) code that simulates particle-particle collisions via the Direct Simulation Monte Carlo (DSMC) method. Due to the computational challenges associated with a complete 360° volumetric domain, a practical alternative was achieved using a wedge domain and a range of azimuthal angles was explored (5°, 15°, 30°, and 45°) to study possible effects on the streamer growth and propagation due to the finite wedge angle. A DC voltage of 6 kV is administered to a hemispherical anode of radius 100 μm, with a planar cathode held at ground potential, generating an over-volted state with an electric field of 4 MV/m across a 1500 μm gap. The domain is seeded with an initial ion and electron density of 10 18 m -3 at 1 eV temperature confined to a spherical region of radius 100 μm centered at the tip of the anode. The air chemistry model [1] includes standard Townsend breakdown mechanisms (electron-neutral elastic, excitation, ionization, attachment, and detachment collision chemistry and secondary electron emission) as well as streamer mechanisms (photoionization and ion-neutral collisions) via tracking excited state neutrals which can then either quench via collisions or spontaneously emit a photon based on specific Einstein-A coefficients [2, 3]. In this work, positive streamer dynamics are formally quantified for each wedge angle in terms of electron velocity and density as temporal functions of coordinates r, Φ, and z. Applying a random plasma seed for each simulation, particles of interest are tracked with near femtosecond temporal resolution out to 1.4 ns and spatially binned. This process is repeated six times and results are averaged. Prior 2D studies have shown that the reduced electric field, E/n, can significantly impact streamer evolution [4]. We extend the analysis to 3D wedge geometries, to limit computational costs, and examine the wedge angle’s effect on streamer branching, propagation, and velocity. Results indicate that the smallest wedge angle that produced an acceptably converged solution is 30°. The potential effects that a mesh, when under-resolved with respect to the Debye length, can impart on streamer dynamics and numerical heating were not investigated, and we explicitly state here that the smallest cell size was approximately 10 times the minimum λ D in the streamer channel at late times. This constraint on cell size was the result of computational limitations on total mesh count.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

DOE OSTI2016

Uranium Casting Pin Dissolution for Multi-element and Si Analysis

The purpose of this special instruction is to establish a standard method for the dissolution of uranium casting materials from FCF or HFEF. The Spent Fuel Treatment program requires the analysis of uranium casting pins in order to determine the level of impurities. The samples are dissolved in a laboratory hood for ICP-MS and ICP-OES analyses. The dissolution of the uranium will require the use of nitric and/or hydrochloric acid, with a trace amount of hydrofluoric acid as a dissolution catalyst. Two dissolution methods are provided to allow for the choice of the final dissolver matrix. A process blank should be performed along with samples.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗