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All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Spin Reorientation in Antiferromagnetic Layered FePt 5 P

FePt 5 P, a substitutional variant of the anti-CeCoIn 5 structure type in the space group P4/mmm, was synthesized by a high-temperature solid-state method and structurally characterized by X-ray diffraction. FePt 5 P contains layers of FePt 12 clusters formed by magnetically active Fe and heavy Pt with strong spin-orbit coupling (SOC); the layers are separated by P atoms. The various Fe–Pt distances in FePt 12 clusters generate complex magnetic orders in FePt 5 P. According to temperature-dependent magnetic and specific heat measurements, FePt 5 P shows a stripe-type antiferromagnetic order at T N ≈ 90 K, which is also confirmed by resistivity measurements. Furthermore, a spin reorientation occurs at ~74 and ~68 K in and out of the ab plane based on the specific heat measurements. The temperature-dependent neutron powder diffraction patterns demonstrate the antiferromagnetic order in FePt 5 P, and the spins orientate up to 58.4° with respect to the c axis at 10 K. First-principles calculations of FePt 5 P show the band splitting at the Fermi level by strong SOC and the s–d hybridization between P and Fe/Pt electrons enhances the structural stability and affects the magnetic ordering.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Enhancing Oxygen Evolution Reaction and Stability in Proton-Conducting Solid Oxide Electrolysis Cells (p-SOECs) via a Porous Gadolinium-Doped Ceria Interlayer

Proton-conducting solid oxide electrolysis cells (p-SOECs) offer a promising pathway for intermediate temperature (400-600 °C) hydrogen production. However, they still face critical challenges related to sluggish oxygen evolution reaction (OER) kinetics and low Faradaic efficiencies. Here, in this work, we demonstrate that introducing a thin (~0.8 µm) porous Gd 0.1 Ce 0.9 O 1.95 (GDC) interlayer between a BaCo 0.8 Zr 0.1 Zn 0.1 O 3-δ (BCZZ) oxygen electrode and electrolyte significantly enhances p-SOEC performance. The GDC interlayer reduces polarization resistance by 48% (0.54 to 0.28 O cm 2 ) and increases Faradaic efficiency from 63% to 81% at -0.8 A/cm 2 and 600 °C. GDC interlayer p-SOECs display elevated effective H 2 current densities compared to control p-SOECs and reach up to -1.22 A/cm 2 at 1.3 V. Mechanistic studies on the interactions between GDC and BCZZ reveal that GDC intrinsically promotes OER kinetics by significantly reducing the polarization activation energy (Ea p ), dropping from 1.45 to 1.22 eV for full p-SOECs and 0.98 to 0.76 eV for symmetric cells. This promotional effect is localized in the electrochemically active region near the electrolyte interface. Durability testing for over 1500 hours under 50% H 2 O conditions indicates that the GDC interlayer also improves long-term stability, with a degradation rate 53% lower than control p-SOECs. By pinpointing the interfacial region where GDC exerts its promotional effect, highlighting its role in enhancing OER kinetics, and establishing interlayer engineering as a powerful technique, this work provides a unified pathway to simultaneously improve p-SOEC activity, Faradaic efficiency, and durability.

08 - HYDROGEN↗
DOE OSTI2026

Ternary Phosphides Ba M 2 P 2 : Tailoring Crystal and Electronic Structures Enables Highly Efficient HER Electrocatalysis

Binary transition metal phosphides and their solid solutions have emerged as promising hydrogen evolution reaction (HER) catalysts. Although many research endeavors have adopted strategies to vary compositions to optimize catalytic performance, they mainly focus on binary structures, which represent only a small fraction of the abundant phase space of structure types among transition metal phosphides. Here, the largely unexplored class of ternary and multinary ordered phosphides in catalysis comprises two or more metals with quite different chemical nature, concealing the structure–property relationships essential for advancing catalyst design. Here, we explored phosphides crystallizing in one of the most abundant ordered intermetallic structure types, —the ThCr 2 Si 2 type, —where square nets of 3d transition metal M and P atoms are separated by layers of electropositive Ba cations. Four ternary BaM 2 P 2 (M = Fe, Fe/Cu, Fe/Ni, Ni) catalysts were synthesized and characterized. BaNi 2 P 2 showed high HER activity in acidic electrolyte, which required an overpotential, η 10 , of only 62 mV to drive current density j = –10 mA/cm 2 and high stability with a potential drop rate of 0.25 mV/h. BaNi 2 P 2 outperformed other Ni-based catalysts, such as Ni 2 P and Ni 5 P 4 . Notably, at current densities above –170 mA/cm 2 , BaNi 2 P 2 outperformed the standard Pt electrode measured under identical conditions. Electronic structure analysis revealed a volcano-type activity trend among the four BaM 2 P 2 catalysts based on their d-band center positions, highlighting the role of electropositive Ba cations in shifting the Ni-3d orbitals into an optimal position.

BaNi2P2↗
DOE OSTI2023

Optical constants of polycrystalline Al 0.25 Ga 0.75 P and Al 0.9 Ga 0.1 As determined by variable-angle spectroscopic ellipsometry

The optical constants of single-crystal Al x Ga 1-x P and Al x Ga 1-x As have been widely studied at various Al compositions but have not yet been thoroughly investigated as polycrystalline materials. Using variable-angle spectroscopic ellipsometry, we estimate and analyze the optical constants of polycrystalline Al 0.25 Ga 0.75 P and Al 0.9 Ga 0.1 As that were non-epitaxially deposited at deposition temperatures of either 250 or 420 °C, and with various dopant species, dopant concentrations, and V/III flux ratios. Here, for wavelengths of 350–400 nm, decreasing the V/III ratio increases the refractive index of Be-doped polycrystalline Al 0.25 Ga 0.75 P. For wavelengths >500 nm, as the targeted Be dopant concentration increases for polycrystalline Al 0.25 Ga 0.75 P, the amount the extinction coefficient increases and the indirect bandgap decreases depends on the V/III ratio. Furthermore, Si-doped polycrystalline Al 0.25 Ga 0.75 P has significantly smaller extinction coefficient values than when it is Be-doped, for the same V/III ratio and targeted doping concentration, at wavelengths >500 nm. Based on our findings, we hypothesize that the dopant species, dopant concentration, and the V/III ratio dictate various types of defect concentrations, which then affect the optical constants and indirect bandgap of polycrystalline Al 0.25 Ga 0.75 P. Additionally, for wavelengths >500 nm, we find that polycrystalline Al 0.25 Ga 0.75 P and Al 0.9 Ga 0.1 As have the lowest extinction coefficient values when deposited at 420 °C, as opposed to 250 °C. Thus, we hypothesize that the deposition temperature is the most significant factor in dictating the optical constants of these polycrystalline III-Vs. Ultimately, this work demonstrates alternative methods to tune the optical constants of polycrystalline Al 0.25 Ga 0.75 P and Al 0.9 Ga 0.1 As, as opposed to tuning the Al composition.

42 ENGINEERING↗
DOE OSTI2022

Exploring the sensitivity of charge-exchange ( p , n ) reactions to the neutron density distribution

The determination of the nuclear neutron properties suffers from uncontrolled uncertainties, which have attracted considerable attention recently, such as in the context of the PREX experiment. Our aim is to analyze the sensitivity of charge-exchange (p,n) reactions to the neutron density distribution ρ n and constrain the neutron characteristics in the nuclear structure models. Method: By combing the folding and the mean-field models, the nucleon-nucleus (N,A) potential can be obtained from the nuclear density distribution. Further, the (p,p) and (p,n) cross sections for 48 Ca and 208 Pb are calculated following the distorted-wave Born approximation method. As a result, compared with the (p,p) cross section, the effects of ρ n variation on the (p,n) cross section are significant, which is due to the impact of isovector properties. Based on the global folding model analyses of data, it is found that 48 Ca and 208 Pb have relatively large neutron skin thickness ΔR np . Results illustrate that the charge-exchange (p,n) reaction is a sensitive probe of ρ n . The results in this paper can offer useful guides for future experiments of neutron characteristics.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2020

Hyperon III: $$K^{-}p - \pi \varSigma $$ coupled-channel dynamics in the $$\varLambda (1405)$$ mass region

Abstract Low-energy data on the three charge states in $$\gamma p \rightarrow K^+(\varSigma \pi )$$ γ p → K + ( Σ π ) from CLAS at JLab, on $$K^-p\rightarrow \pi ^0\pi ^0\varLambda $$ K - p → π 0 π 0 Λ and $$\pi ^0\pi ^0\varSigma $$ π 0 π 0 Σ from the Crystal Ball at BNL, bubble chamber data on $$K^-p\rightarrow \pi ^-\pi ^+\pi ^{\pm }\varSigma ^{\mp }$$ K - p → π - π + π ± Σ ∓ , low-energy total cross sections on $$K^-$$ K - induced reactions, and data on the $$K^-p$$ K - p atom are fitted with the BnGa partial-wave-analysis program. We find that the data can be fitted well with just one isoscalar spin-1/2 negative-parity pole, the $$\varLambda (1405)$$ Λ ( 1405 ) , and background contributions. In a fit with one isocsalar state, the $$\varLambda (1405)$$ Λ ( 1405 ) structure can be determined as a dominantly SU(3) singlet state. A fit with two isoscalar singlet states, with imposed properties of the low-mass state, is, however, also not incompatible with data.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2022

Novel and effective surface passivation for high efficiency n- and p-type Silicon solar cell

The project objective was to develop a novel Si surface passivation method using chalcogens, sulfur (S) and/or selenium (Se), as passivating elements, to withstand industry-standard high temperature contacting and metallization schemes for p-type Si based passivated emitter and rear contact (p-PERC) solar cells. The back surface passivation of PERC cells has been improved drastically with the invention and successful application of an Al 2 O 3 passivation layer. However, the front n + diffused junction surface is still poorly passivated by the standard amorphous silicon nitride (SiNx) anti-reflection coating (ARC) layer. This project sought to address the passivation challenges of both front n+ emitter and undiffused p-Si back surface. Improved p-PERC solar cell performance with open circuit voltage (V OC ) > 680 mV and efficiency of 22% were targeted to validate superior defect passivation properties as compared to standard SiO 2 / Al 2 O 3 passivation. During this project, we systematically investigated process-structure-properties-performance relationships of this novel advanced defect passivation approach. The S/Se passivation was carried out by reacting industrial Czochralski (Cz) Si wafers in H 2 S and H 2 Se gases in a chemical vapor deposition (CVD) reactor at temperatures up to 700°C. After an exhaustive optimization of the process parameters (temperature, time, and gas concentration), we established an optimized process and demonstrated extremely low surface recombination velocities (SRVs) of 1.5 cm/s and 8 cm/s on n-type and p-type Si, respectively, by S-passivation. In-depth surface and interface characterization were performed using soft x-ray and photoelectron spectroscopies (XPS, UPS, XES), combined with capacitance-voltage-frequency (C-V-f) measurements, to decipher the surface chemical/electronic structure and interface defect state densities. These measurements provided critical understanding of the defect passivation mechanism and elucidated the presence of surface S-Si bonds, a reduction of surface dipoles, and low interface state densities (D it ) < 10 11 cm -2 ev -1 . We also found that the Se-passivation is inferior to the S-passivation (by at least one order of magnitude in SRV). Application of the optimized S-passivation to the n+ diffused emitter surface led to a low surface recombination current density, J0 ≈ 40 fA/cm 2 (~ 1/4 of the industry-standard SiNx-passivation), and high implied V OC (686 mV) in p-PERC solar cell structures. The S-passivation process also was found to improve the bulk quality of the p-type Si, better than the SiO 2 or Al 2 O 3 passivation processes. After successful demonstration of efficient passivation of Si surface defects by S, we extensively studied the air, thermal, and illumination stability of the passivation structure. S-passivation itself degrades in air due to competing reactions with moisture and oxygen to form oxides, which can be eliminated by a SiNx capping layer (also acting as a anti-reflective coating). After SiNx process optimization, we demonstrated illumination and thermally stable S-passivation with SRV < 5 cm/s and J 0 < 80 fA/cm 2 . These enhancements in Si passivation, incorporated into p-PERC cells, achieved an efficiency of 19.93% with V OC = 649 mV, using manufacturing metallization and contacting schemes. The low cell performance (cell V OC is much less than the implied V OC = 686 mV, anticipated from surface passivation) was identified due to degradation of S-passivation during the metal firing step (out-diffusion of S from the Si interface to the SiNx surface). The S-passivation of Si surfaces shows significant promise with excellent passivation quality, essential for high performance (high V OC , high efficiency) solar cells. Integration of this innovative defect passivation into devices, however, demands further development of the capping layer, low temperature (<700°C) metallization process, and/or engineering of advanced device structures. Surface passivation-dominated advanced Si solar cells, such as tunnel oxide passivated contacts and Si heterojunctions, are increasingly of interest due to their high-performance potential and will have a growing photovoltaic market share in the near future.

14 SOLAR ENERGY↗
DOE OSTI2024

Structural and dynamic changes in P-Rex1 upon activation by PIP 3 and inhibition by IP 4

PIP 3 -dependent Rac exchanger 1 (P-Rex1) is abundantly expressed in neutrophils and plays central roles in chemotaxis and cancer metastasis by serving as a guanine-nucleotide exchange factor (GEF) for Rac. The enzyme is synergistically activated by PIP 3 and heterotrimeric Gβγ subunits, but mechanistic details remain poorly understood. While investigating the regulation of P-Rex1 by PIP 3 , we discovered that Ins(1,3,4,5)P 4 (IP 4 ) inhibits P-Rex1 activity and induces large decreases in backbone dynamics in diverse regions of the protein. Cryo-electron microscopy analysis of the P-Rex1·IP 4 complex revealed a conformation wherein the pleckstrin homology (PH) domain occludes the active site of the Dbl homology (DH) domain. This configuration is stabilized by interactions between the first DEP domain (DEP1) and the DH domain and between the PH domain and a 4-helix bundle (4HB) subdomain that extends from the C-terminal domain of P-Rex1. Disruption of the DH–DEP1 interface in a DH/PH-DEP1 fragment enhanced activity and led to a more extended conformation in solution, whereas mutations that constrain the occluded conformation led to decreased GEF activity. Variants of full-length P-Rex1 in which the DH–DEP1 and PH–4HB interfaces were disturbed exhibited enhanced activity during chemokineinduced cell migration, confirming that the observed structure represents the autoinhibited state in living cells. Interactions with PIP 3 -containing liposomes led to disruption of these interfaces and increased dynamics protein-wide. Our results further suggest that inositol phosphates such as IP 4 help to inhibit basal P-Rex1 activity in neutrophils, similar to their inhibitory effects on phosphatidylinositol-3-kinase.

59 BASIC BIOLOGICAL SCIENCES↗
NASA NTRS2000

p-n Junction Diodes Fabricated on Si-Si/Ge Heteroepitaxial Films

A set of photolithographic masks was designed for the fabrication of diodes in the Si-Si/Ge material system. Fabrication was performed on samples obtained from two different wafers: (1) a complete HBT structure with an n (Si emitter), p (Si/Ge base), and an n/n+ (Si collector/sub-collector) deposited epitaxially (MBE) on a high resistivity p-Si substrate, (2) an HBT structure where epitaxial growth was terminated after the p-type base (Si/Ge) layer deposition. Two different process runs were attempted for the fabrication of Si-Si/Ge (n-p) and Si/Ge-Si (p-n) junction diodes formed between the emitter-base and base-collector layers, respectively, of the Si-Si/Ge-Si HBT structure. One of the processes employed a plasma etching step to expose the p-layer in the structure (1) and to expose the e-layer in structure (2). The Contact metallization used for these diodes was a Cu-based metallization scheme that was developed during the first year of the grant. The plasma-etched base-collector diodes on structure (2) exhibited well-behaved diode-like characteristics. However, the plasma-etched emitter-base diodes demonstrated back-to-back diode characteristics. These back-to back characteristics were probably due to complete etching of the base-layer, yielding a p-n-p diode. The deep implantation process yielded rectifying diodes with asymmetric forward and reverse characteristics. The ideality factor of these diodes were between 1.6 -2.1, indicating that the quality of the MBE grown epitaxial films was not sufficiently high, and also incomplete annealing of the implantation damage. Further study will be conducted on CVD grown films, which are expected to have higher epitaxial quality.

Das, K.↗
NASA NTRS2023

P-ACTIVE Project Report

The Phase change material-based actively-tunable filter (P-ACTIVE, Dr. Hyun Jung Kim, the Principal Investigator / PI) project is a NASA Langley Research Center (LaRC)-led research endeavor that began as a NASA CIF (Center Innovation Fund) project in 2019. The goal of P-ACTIVE is to develop all-solid-state tunable optical filters that can serve as low-Size, Weight, and Power (SWaP) replacements to the ubiquitous filter wheel technology current in use, and serve as a starting point for completely new optical component technologies. By using materials commonly used in electronic memory devices, namely chalcogenide phase-change materials (PCMs), in conjunction with nanostructured surfaces with exotic, tailored optical responses (“metasurfaces”), the P-ACTIVE filters are able to tune their optical transmission/reflection behavior in real-time. Because of this new functionality, P-ACTIVE filters are highlighted for NASA science and space programs such as next generation Lidar, landing system (SLS) thermal monitoring, thermal imaging, imaging spectroscopy, and disaster monitoring (e.g., volcanic eruption observations from SmallSats). This document intends to serve as a compendium of the P-ACTIVE project. We begin by describing the project from background science and assume no prior knowledge of the subject. We then address experimental and theoretical results of P-ACTIVE device performance, as well as recent results obtained from the MISSE-14 mission related to space qualification of P-ACTIVE devices and constituent materials. We conclude with a prospective view of the P-ACTIVE technology, and discuss the potential for these filters and other similar metasurface devices to serve NASA’s mission.

metamaterial↗
DOE OSTI2024

Angular Distribution of Dimuons from Drell-Yan Production in p+Fe Interactions at 120 GeV Beam Energy

In the E906/SeaQuest Fermilab experiment, we report a measurement of the angular distributions by measuring the angular parameters $\lambda$, $\mu$, and $\nu$ of Drell-Yan dimuons produced using a 120 GeV proton beam incident on an iron target. The angular distribution in the naive Drell-Yan model does not show any $\cos2\phi$ dependency, where $\phi$ denotes the azimuthal angle of dimuons in the Collins-Soper frame. However, pion-induced Drell-Yan experiments, such as NA10 and E615, have observed a significant dependence on $\cos2\phi$. The Boer–Mulders function, a transverse momentum-dependent distribution function, represents the correlation between the transverse spin and the transverse momentum of the quark. A non-zero Boer-Mulders function or an improved higher-order Drell-Yan model considering QCD effects can produce a $\cos 2\phi$ modulation in the Drell-Yan angular distribution. To measure the angular distributions, we have used an event mixing method to construct the combin atorial background, which was then subtracted from the data to isolate the Drell-Yan signal. Following this, we corrected the detector, trigger, and reconstruction efficiencies using a doubly-iterative Bayesian Unfolding method. This iterative unfolding technique improves the response matrix based on the results of the previous unfolding step, ensuring robust convergence without exaggeration of uncertainties. The angular distributions of the dimuons were measured over the invariant mass range $5.0 < M_{\mu^+ \mu^-} < 8.0$ $GeV/c^2$, with dimuon transverse momentum $P_T < 2$ GeV/c and Feynman-x $-0.18 < x_F < 0.9$. The measured angular distributions are then compared with the QCD calculations for $p + \text{Fe}$ interactions, and proton-induced angular distribution measurements from other experiments. We have observed weak $\cos 2\phi$ modulations as a function of $P_T$. For $P_T > 1.0 \, \text{GeV}/c$, the predicted NNLO perturbative QCD value of $\nu$ is larger than what we have me asured at E906/SeaQuest. Moreover, we have not observed a strong dependence of $\nu$ on the kinematic variables, such as dimuon mass $M_{\mu^+ \mu^-}$ and Bjorken-$x$. The spin alignment of the virtual photon, $\lambda$, measured from the SeaQuest Drell-Yan $p+\text{Fe}$ data, is found to be strongly dependent on $P_T$, decreasing as $P_T$ increases. $\lambda$ also holds to the upper bound condition $\lambda < 1.0$ within the statistical uncertainty, showing a trend similar to that predicted by NNLO perturbative QCD. However, for $1.0 < P_T < 2.0 \, \text{GeV}/c$, the extracted $\lambda$ value from SeaQuest is smaller than that predicted by perturbative QCD at NNLO.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2022

n-Type doping of a solution processed p-type semiconductor using isoelectronic surface dopants for homojunction fabrication

The p-n junction is one of the fundamental requirements for a practical semiconductor-based electronic device. Designing a heterojunction comprising of dissimilar p-type and n-type semiconductors calls for careful energy level considerations, both when selecting the semiconductor materials as well as the metal contacts. A homojunction based on a single semiconductor simplifies this task, as energy levels of the p-type and n-type materials are already fairly similar, allowing for easier selection of contacts. Traditionally, homojunctions rely on doping of a bulk semiconductor to achieve p- and n-type transport through controlled addition of aliovalent dopants via energy-intensive processes such as ion implantation or thermal annealing. Exact control of doping in nanocrystalline semiconductors is significantly more challenging, due to self-purification effects. However, owing to their large surface areas, surface moieties can be utilized to both dope the nanostructures as well as tune their energy levels. Here, we present a facile technique based on an isoelectronic surface dopant in order to achieve p- and n-type materials based on the same semiconductor. We show that thin p-type colloidal Bi 2 Te 3 nanowires can be switched to n-type through surface functionalization, thus increasing the availability of new nanocrystalline solution-processable p-n homojunctions.

42 ENGINEERING↗
NASA NTRS2023

A Comparison of Passive Microwave Emission Models for Estimating Brightness Temperature at L- and P-band Under Bare and Vegetated Soil Conditions

P-band radiometry has been demonstrated to have a deeper sensing depth than at L-band, making the consideration of multi-layer microwave interactions necessary. Additionally, the scattering and phase interference effects are different at P-band, requiring a re-consideration of the need for coherent models. However, the impact remains to be clarified, and understanding the validity and limitations of these models at both L-band and P-band is crucial for their refinement and application. Therefore, two general categories of microwave emission models, including two stratified coherent models (Njoku and Wilhite) and four incoherent models (conventional tau-omega model and three multi-layer models being zero-order, first-order, and incoherent solution), were intercompared for the first time on the same dataset. This evaluation utilized observations of L-band and P-band radiometry under different land cover conditions from a tower-based experiment in Victoria, Australia. Model estimations of brightness temperature (TB) were consistent with measurements, with the lowest root mean square error (RMSE) at P-band V-polarization under corn (2 K) and the highest RMSE at L-band H-polarization under bare soil (13 K). Coherent models performed slightly better than incoherent models under bare soil (3 K less RMSE), while the opposite was true under vegetated soil conditions (1 K less RMSE). Coherent and incoherent models showed maximum differences (3 K at P-band, 2 K at L-band), correlating strongly with soil moisture variations at 0-10 cm. Findings suggest that coherent and incoherent models perform similarly; thus, incoherent models may be preferable for estimating TB at L- and P-band due to reduced computational complexity.

Soil moisture profile↗
DOE OSTI2022

Measurement of inclusive charged-particle b-jet production in pp and p-Pb collisions at $\sqrt{s_{\mathrm{NN}}}$ = 5.02 TeV

A measurement of the inclusive b-jet production cross section is presented in pp and p-Pb collisions at $\sqrt{s_{NN}}$ = 5.02 TeV, using data collected with the ALICE detector at the LHC. The jets were reconstructed in the central rapidity region |η| < 0.5 from charged particles using the anti-k T algorithm with resolution parameter R = 0.4. Identification of b jets exploits the long lifetime of b hadrons, using the properties of secondary vertices and impact parameter distributions. The p T -differential inclusive production cross section of b jets, as well as the corresponding inclusive b-jet fraction, are reported for pp and p-Pb collisions in the jet transverse momentum range 10 ≤ p T,ch jet ≤ 100 GeV/c, together with the nuclear modification factor, $R^{b-jet}_{pPb}$. The analysis thus extends the lower p T limit of b-jet measurements at the LHC. The nuclear modification factor is found to be consistent with unity, indicating that the production of b jets in p-Pb at $\sqrt{s_{NN}}$ = 5.02 TeV is not affected by cold nuclear matter effects within the current precision. The measurements are well reproduced by POWHEG NLO pQCD calculations with PYTHIA fragmentation.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2023

J/ψ production at midrapidity in p-Pb collisions at $ \sqrt{s_{\textrm{NN}}}$ = 8.16 TeV

The production of inclusive, prompt and non-prompt J/ψ was studied for the first time at midrapidity (–1.37 < y cms < 0.43) in p-Pb collisions at $\sqrt{s_{NN}}$ = 8.16 TeV with the ALICE detector at the LHC. The inclusive J/ψ mesons were reconstructed in the dielectron decay channel in the transverse momentum (p T ) interval 0 < p T < 14 GeV/c and the prompt and non-prompt contributions were separated on a statistical basis for p T > 2 GeV/c. The study of the J/ψ mesons in the dielectron channel used for the first time in ALICE online single-electron triggers from the Transition Radiation Detector, providing a data sample corresponding to an integrated luminosity of 689 ± 13 μb –1 . The proton-proton reference cross section for inclusive J/ψ was obtained based on interpolations of measured data at different centre-of-mass energies and a universal function describing the p T -differential J/ψ production cross sections. The p T -differential nuclear modification factors R pPb of inclusive, prompt, and non-prompt J/ψ are consistent with unity and described by theoretical models implementing only nuclear shadowing.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2022

Observation of a multiplicity dependence in the $\mathcal{p}_T$-differential charm baryon-to-meson ratios in proton–proton collisions at $\sqrt{s}$ = 13 TeV

The production of prompt D 0 , D$^+_s$, and Λ$^+_c$ hadrons, and their ratios, D$^+_s$/D 0 and Λ$^+_c$/D 0 , are measured in proton–proton collisions at $\sqrt{s}$ = 13 TeV at midrapidity (|y| < 0.5) with the ALICE detector at the LHC. The measurements are performed as a function of the charm-hadron transverse momentum (p T ) in intervals of charged-particle multiplicity, measured with two multiplicity estimators covering different pseudorapidity regions. While the strange to non-strange D$^+_s$/D 0 ratio indicates no significant multiplicity dependence, the baryon-to-meson p T -differential Λ$^+_c$/D 0 ratio shows a multiplicity-dependent enhancement, with a significance of 5.3σ for 1 < p T < 12 GeV/c, comparing the highest multiplicity interval with respect to the lowest one. The measurements are compared with a theoretical model that explains the multiplicity dependence by a canonical treatment of quantum charges in the statistical hadronisation approach, and with predictions from event generators that implement colour reconnection mechanisms beyond the leading colour approximation to model the hadronisation process. The Λ$^+_c$/D 0 ratios as a function of p T present a similar shape and magnitude as the Λ/K$^0_s$ ratios in comparable multiplicity intervals, suggesting a potential common mechanism for light- and charm-hadron formation, with analogous multiplicity dependence. The p T -integrated ratios, extrapolated down to p T = 0, do not show a significant dependence on multiplicity within the uncertainties.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2023

Measurements of azimuthal anisotropies at forward and backward rapidity with muons in high-multiplicity p–Pb collisions at $\sqrt{s_{NN}} = 8.16$ TeV

The study of the azimuthal anisotropy of inclusive muons produced in p–Pb collisions at $\sqrt{s_{NN}}$ = 8.16 TeV, using the ALICE detector at the LHC is reported. The measurement of the second-order Fourier coefficient of the particle azimuthal distribution, v 2 , is performed as a function of transverse momentum p T in the 0–20% high-multiplicity interval at both forward (2.03 < y CMS < 3.53) and backward (-4.46 < y CMS < -2.96) rapidities over a wide pT range, 0.5 < p T < 10 GeV/c, in which a dominant contribution of muons from heavy-flavour hadron decays is expected at p T > 2 GeV/c. The v 2 coefficient of inclusive muons is extracted using two different techniques, namely two-particle cumulants, used for the first time for heavy-flavour measurements, and forward–central two-particle correlations. Both techniques give compatible results. A positive v 2 is measured at both forward and backward rapidities with a significance larger than 4.7σ and 7.6σ, respectively, in the interval 2 < p T < 6 GeV/c. Comparisons with previous measurements in p–Pb collisions at $\sqrt{s_{NN}}$ = 5.02 TeV, and with AMPT and CGC-based theoretical calculations are discussed. The findings impose new constraints on the theoretical interpretations of the origin of the collective behaviour in small collision systems

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2024

Charged-particle production as a function of the relative transverse activity classifier in pp, p–Pb, and Pb–Pb collisions at the LHC

Measurements of charged-particle production in pp, p–Pb, and Pb–Pb collisions in the toward, away, and transverse regions with the ALICE detector are discussed. These regions are defined event-by-event relative to the azimuthal direction of the charged trigger particle, which is the reconstructed particle with the largest transverse momentum $(p^{trig}_T)$ in the range 8 < $p^{trig}_T$< 15 GeV/c. The toward and away regions contain the primary and recoil jets, respectively; both regions are accompanied by the underlying event (UE). In contrast, the transverse region perpendicular to the direction of the trigger particle is dominated by the so-called UE dynamics, and includes also contributions from initial- and final-state radiation. The relative transverse activity classifier, $R_T = N^T_{ch}/\langle N^T_{ch}\rangle$, is used to group events according to their UE activity, where $N^T_{ch}$ is the charged-particle multiplicity per event in the transverse region and $\langle N^T_{ch}\rangle$ is the mean value over the whole analysed sample. The energy dependence of the R T distributions in pp collisions at $\sqrt{s_{NN}}$ = 2.76, 5.02, 7, and 13 TeV is reported, exploring the Koba-Nielsen-Olesen (KNO) scaling properties of the multiplicity distributions. The first measurements of charged-particle p T spectra as a function of R T in the three azimuthal regions in pp, p–Pb, and Pb–Pb collisions at $\sqrt{s_{NN}}$ = 5.02 TeV are also reported. Data are compared with predictions obtained from the event generators PYTHIA 8 and EPOS LHC. This set of measurements is expected to contribute to the understanding of the origin of collective-like effects in small collision systems (pp and p–Pb).

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗