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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 469 records · Page 26
All sourcesNASA NTRSDOE OSTI
DOE OSTI2013

Recrystallization of silicon-on-sapphire structures at various amorphization-ion-beam energies

Silicon films on sapphire substrates are grown via recrystallization from the silicon-sapphire interface. An amorphous layer is formed using ion implantation with silicon ion energies of 90-150 keV. An X-ray rocking curve is used to estimate the crystalline perfection of the silicon films. After recrystallization, the silicon layer consists of two parts with different crystalline quality. The recrystallized silicon-on-sapphire structures have a highly perfect upper layer (for fabricating microelectronic devices) and a lower layer adjacent to the sapphire substrate containing a large number of defects.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Rapid pulse annealing of CdZnTe detectors for reducing electronic noise

A combination of doping, rapid pulsed optical and/or thermal annealing, and unique detector structure reduces or eliminates sources of electronic noise in a CdZnTe (CZT) detector. According to several embodiments, methods of forming a detector exhibiting minimal electronic noise include: pulse-annealing at least one surface of a detector comprising CZT for one or more pulses, each pulse having a duration of .about.0.1 seconds or less. The at least one surface may optionally be ion-implanted. In another embodiment, a CZT detector includes a detector surface with two or more electrodes operating at different electric potentials and coupled to the detector surface; and one or more ion-implanted CZT surfaces on or in the detector surface, each of the one or more ion-implanted CZT surfaces being independently connected to one of the two or more electrodes and the surface of the detector. At least two of the ion-implanted surfaces are in electrical contact.

47 OTHER INSTRUMENTATION↗
DOE OSTI2014

Nanocrystalline SiC and Ti 3 SiC 2 Alloys for Reactor Materials: Diffusion of Fission Product Surrogates

MAX phases, such as titanium silicon carbide (Ti 3 SiC 2 ), have a unique combination of both metallic and ceramic properties, which make them attractive for potential nuclear applications. Ti 3 SiC 2 has been suggested in the literature as a possible fuel cladding material. Prior to the application, it is necessary to investigate diffusivities of fission products in the ternary compound at elevated temperatures. This study attempts to obtain relevant data and make an initial assessment for Ti 3 SiC 2 . Ion implantation was used to introduce fission product surrogates (Ag and Cs) and a noble metal (Au) in Ti 3 SiC 2 , SiC, and a dual-phase nanocomposite of Ti 3 SiC 2 /SiC synthesized at PNNL. Thermal annealing and in-situ Rutherford backscattering spectrometry (RBS) were employed to study the diffusivity of the various implanted species in the materials. In-situ RBS study of Ti 3 SiC 2 implanted with Au ions at various temperatures was also performed. The experimental results indicate that the implanted Ag in SiC is immobile up to the highest temperature (1273 K) applied in this study; in contrast, significant out-diffusion of both Ag and Au in MAX phase Ti 3 SiC 2 occurs during ion implantation at 873 K. Cs in Ti 3 SiC 2 is found to diffuse during post-irradiation annealing at 973 K, and noticeable Cs release from the sample is observed. This study may suggest caution in using Ti 3 SiC 2 as a fuel cladding material for advanced nuclear reactors operating at very high temperatures. Further studies of the related materials are recommended.

36 MATERIALS SCIENCE↗
DOE OSTI2015

TEM investigation of the surface layer structure [111]{sub B2} of the single NiTi crystal modified by the Si-ion beam implantation

The study was carried on for the single NiTi crystals subjected to the Si-ion beam implantation. Using the transmission electron microscopy technique (TEM), the surface layer structure [111]{sub B2} was examined for the treated material. The modified near-surface sublayers were found to have different composition. Thus the uppermost sublayer contained mostly oxides; the lower-lying modified sublayer material was in an amorphous state and the thin underlying sublayer had a defect structure.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Estimation of the efficiency of the introduction of a porous layer into a silicon-on-sapphire structure substrate to enhance the reliability of devices under irradiation

We investigate the efficiency of the introduction of a porous layer into the substrate of a silicon-onsapphire structure by the implantation of He ions to enhance the radiation resistance of devices. The properties of the introduced layer and its parameters affecting the concentration of minority charge carriers generated by irradiation are analyzed. The reported results of the analysis and calculations can be used to optimize He-ion implantation conditions during the formation of a porous layer.

36 MATERIALS SCIENCE↗
DOE OSTI2012

'Abnormal' angle response curves of TW/Rs for near zero tilt and high tilt channeling implants

Angle control has been widely accepted as the key requirement for ion implantation in semiconductor device processing. From an ion implanter point of view, the incident ion direction should be measured and corrected by suitable techniques, such as XP-VPS for the VIISta implanter platform, to ensure precision ion placement in device structures. So called V-curves have been adopted to generate the wafer-based calibration using channeling effects as the Si lattice steer ions into a channeling direction. Thermal Wave (TW) or sheet resistance (Rs) can be used to determine the minimum of the angle response curve. Normally it is expected that the TW and Rs have their respective minima at identical angles. However, the TW and Rs response to the angle variations does depend on factors such as implant species, dose, and wafer temperature. Implant damage accumulation effects have to be considered for data interpretation especially for some 'abnormal' V-curve data. In this paper we will discuss some observed 'abnormal' angle responses, such as a) TW/Rs reverse trend for Arsenic beam, 2) 'W' shape of Rs Boron, and 3) apparent TW/Rs minimum difference for high tilt characterization, along with experimental data and TCAD simulations.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Coupling of a locally implanted rare-earth ion ensemble to a superconducting micro-resonator

We demonstrate the coupling of rare-earth ions locally implanted in a substrate (Gd{sup 3+} in Al{sub 2}O{sub 3}) to a superconducting NbN lumped-element micro-resonator. The hybrid device is fabricated by a controlled ion implantation of rare-earth ions in well-defined micron-sized areas, aligned to lithographically defined micro-resonators. The technique does not degrade the internal quality factor of the resonators which remain above 10{sup 5}. Using microwave absorption spectroscopy, we observe electron-spin resonances in good agreement with numerical modelling and extract corresponding coupling rates of the order of 1 MHz and spin linewidths of 50–65 MHz.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1980

Improved process control for VMOS FET's

Method is applied in middle of fabrication process: (a) after mask region is formed, diffused-boron region is etched; (b) etching is left incomplete for ion implantation; (c) boron ions are implanted into region to define accurately crucial geometry of V-groove; (d) groove is etched to completion, forming two well-defined diffusion regions that serve as source and drain of transistor. Remaining process is conventional.

Jhabvala, M. D.↗
DOE OSTI2019

Swelling and Helium Bubble Morphology in a Cryogenically Treated FeCrNi Alloy with Martensitic Transformation and Reversion after Helium Implantation

A cryo-quenched 70 wt % Fe-15 wt% Cr-15 wt% Ni single-crystal alloy with fcc (face centered cubic), bcc (body centered cubic), and hcp (hexagonal close packed) phases was implanted with 200 keV He+ ions up to 2 × 1017 ions·cm -2 at 773 K. Surface-relief features were observed subsequent to the He+ ion implantation, and transmission electron microscopy was used to characterize both the surface relief properties and the details of associated “swelling effects” arising cumulatively from the austenitic-to-martensitic phase transformation and helium ion-induced bubble evolution in the single-crystal ternary alloy. The bubble size in the bcc phase was found to be larger than that in the fcc phase, while the bubble density in the bcc phase was correspondingly lower. The phase boundaries with misfit dislocations formed during the martensitic transformation and reversion processes served as helium traps that dispersed the helium bubble distribution. Swelling caused by the phase transformation in the alloy was dominant compared to that caused by helium bubble formation due to the limited depth of the helium ion implantation. The detailed morphology of helium bubbles formed in the bcc, hcp, and fcc phases were compared and correlated with the characters of each phase. The helium diffusion coefficient under irradiation at 773 K in the bcc phase was much higher (i.e., by several orders of magnitude) than that in the fcc phase and led to faster bubble growth. Moreover, the misfit phase boundaries were shown to be effective sites for the diffusion of helium atoms. This feature may be considered to be a desirable property for improving the radiation tolerance of the subject, ternary alloy.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Controlling Dopant Profiles in Hyperdoped Silicon by Modifying Dopant Evaporation Rates During Pulsed Laser Melting

We describe a method to control the sub-surface dopant profile in 'hyperdoped' silicon fabricated by ion implantation and pulsed laser melting. Dipping silicon ion implanted with sulfur into hydrofluoric acid prior to nanosecond pulsed laser melting leads to a tenfold increase in the rate of sulfur evaporation from the surface of the melt. This results in an 80% reduction of the near-surface dopant concentration, effectively embedding the hyperdoped region in a layer up to 180 nm beneath the surface. This method should facilitate the development of blocked impurity band devices.

14 SOLAR ENERGY↗
DOE OSTI2017

Assessing the oxidation states and structural stability of the Ce analogue of brannerite

The Ce-containing analogue of brannerite (ie, UTi2O6) was previously considered to be stoichiometric (ie, CeTi2O6); however, it has recently been determined that the material is O deficient. This oxygen-deficient material has been suggested to be charged balanced by the presence of a minor concentration of Ce3+ or by the A-site being cation deficient with the Ce oxidation state being 4+. A variety of Ti-containing oxides (including brannerite) have been investigated as potential nuclear wasteforms, and it is necessary to understand the electronic structure of a proposed nuclear wasteform material as well as how the structure responds to radiation from incorporated waste elements. The radiation resistance of a material can be simulated by ion implantation. The objective of this study was to confirm the Ce oxidation state in the cation- and oxygen-deficient material (ie, Ce0.94Ti2O6 - δ) and to determine how radiation damage affects this material. X-ray photoelectron spectroscopy (XPS) and X-ray absorption near-edge spectroscopy were used to study Ce0.94Ti2O6 - δ before and after being implanted with 2 MeV Au- ions. Analysis of the Ce 3d XPS spectra from the as-synthesized samples by using a previously developed fitting method has unequivocally shown that Ce adopts both 4+ (major) and 3+ (minor) oxidation states, which was confirmed by examination of magnetic susceptibility data. Analysis of XPS and X-ray absorption near-edge spectroscopy spectra from ion-implanted materials showed that both Ce and Ti were reduced because of radiation damage and that the local coordination environments of the cations are greatly affected by radiation damage.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2012

Study of local in-homogeneity in ion beam mixing using SIMS ion imaging techniques

The local in-homogeneity in ion beam mixing of Mo/Si system subjected to 110keV Ar{sup +} ion implantation is studied using secondary ion imaging. Sequences of images are recorded across the interface and depth profiles are constructed from different regions of the image planes. Our results show a significant variation in decay length indicative of in-homogeneity in mixing.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Surface Mechanoengineering of a Zr-based Bulk Metallic Glass via Ar-Nanobubble Doping to Probe Cell Sensitivity to Rigid Materials

In this paper, a new materials platform, utilizing the amorphous microstructure of bulk metallic glasses (BMGs) and the versatility of ion implantation, was developed for the fundamental investigation of cell responses to substrate-rigidity variations in the gigapascal modulus range, which was previously unattainable with polymeric materials. The surface rigidity of a Zr-Al- Ni-Cu-Y BMG was modulated with low-energy Ar-ion implantation owing to the impartment of Ar nanobubbles into the amorphous matrix. Surface softening was achieved due to the formation of nanobubble-doped transitional zones in the Zrbased BMG substrate. Bone-forming cell studies on this newly designed platform demonstrated that mechanical cues, accompanied with the potential effects of other surface properties (i.e. roughness, morphology, and chemistry), contributed to modulating cell behaviors. Cell adhesion and actin filaments were found to be less established on less stiff surfaces, especially on the surface with an elastic modulus of 51 GPa. Cell growth appeared to be affected by surface mechanical properties. A lower stiffness was generally related to a higher growth rate. Findings in this study broadened our fundamental understanding concerning the mechanosensing of bone cells on stiff substrates. It also suggests that surface mechano-engineering of metallic materials could be a potential strategy to promote osseointegration of such materials for bone-implant applications. Further investigations are proposed to fine tune the ion implantation variables in order to further distinguish the surface-mechanical effect on bone-forming cell activities from the contributions of other surface properties.

36 MATERIALS SCIENCE↗
NASA NTRS1993

Diffusion of Na and K in the uppermost regolith of Mercury

We examine the conditions under which ions impacting the Hermean surface can act as a regional source of enhanced atmospheric column through ion implantation and subsequent release at the surface. At most latitudes, energetic (a few keV) Na or K ions which impact the nightside surface, are released quickly (well before noon) upon warming of the surface. We show that the relative sunrise/sunset difference produced by ion implantation is ((n)(sub SR) - (n)(sub SS)/(n)(sub Ave) = f, where f is the fraction of the photo-ions recycled, (n)(sub SR) is the average zenith column above the sunrise portion of the illuminated hemisphere, (n)(sub SS) is the average zenith column in the sunset portion, and (n)(sub Ave) is the average column over the sunlit disk. Thus, to produce a large sunrise/sunset difference via ion implantation and subsequent release requires efficient (close to total) recycling. We show that the most extensive set of available data reduced to Na column abundance does not show any sunrise enhancement. We argue that the K data do not permit an unambiguous interpretation in favor of sunrise/sunset differences. We further find that if an efficient surface loss process for the alkali is not operating after sunrise, the initial Na and K distribution will relax into the bulk of the solid. Preserved abundance gradients of Na and K in lunar glasses that the Arrhenius coefficients for impact glasses are likely more modest than those for laboratory glasses derived from rock by nonimpact processes, but the effect of the more modest diffusion rates is only to delay the efficient loss of Na by a few Earth days. We argue that implantation can lead to observable regional increases in the observed Na or K column densities only if it occurs at very high latitudes, where diffusion is slow. It is typically lower energy ions which impact at high latitude and these are both more numerous than the high energy ions and possess smaller average penetration depths; thus there are additional reasons to favor a high-latitude locus for any possible prompt return related increases in zenith column. We find that we cannot rule out sputtering as a source process, as the low-energy ions are efficient sputterers. Finally, we argue that the observed Na/K ratio in the atmopshere may be the expression of their different asymptotic rates of loss from the interiors of the regolith grains. If so, this allows us to fix the importance of sputtering and photon stimulated desorption relative to impact vaporization.

Killen, R. M.↗
DOE OSTI2017

Modification of electrical properties of topological insulators

Ion implantation or deposition can be used to modify the bulk electrical properties of topological insulators. More particularly, ion implantation or deposition can be used to compensate for the non-zero bulk conductivity due to extrinsic charge carriers. The direct implantation of deposition/annealing of dopants allows better control over carrier concentrations for the purposes of achieving low bulk conductivity. Ion implantation or deposition enables the fabrication of inhomogeneously doped structures, enabling new types of device designs.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

Synthesis of layer-tunable graphene: A combined kinetic implantation and thermal ejection approach

Layer-tunable graphene has attracted broad interest for its potentials in nanoelectronics applications. However, synthesis of layer-tunable graphene by using traditional chemical vapor deposition (CVD) method still remains a great challenge due to the complex experimental parameters and the carbon precipitation process. Herein, by performing ion implantation into a Ni/Cu bilayer substrate, the number of graphene layers, especially single or double layer, can be controlled precisely by adjusting the carbon ion implant fluence. The growth mechanism of the layer-tunable graphene is revealed by monitoring the growth process is observed that the entire implanted carbon atoms can be expelled towards the substrate surface and thus graphene with designed layer number can be obtained. Such a growth mechanism is further confirmed by theoretical calculations. The proposed approach for the synthesis of layer-tunable graphene offers more flexibility in the experimental conditions. Being a core technology in microelectronics processing, ion implantation can be readily implemented in production lines and is expected to expedite the application of graphene to nanoelectronics.

36 MATERIALS SCIENCE↗
NASA NTRS1996

Friction and Wear of Ion-Beam-Deposited Diamondlike Carbon on Chemical-Vapor-Deposited, Fine-Grain Diamond

Friction and wear behavior of ion-beam-deposited diamondlike carbon (DLC) films coated on chemical-vapor-deposited (CVD), fine-grain diamond coatings were examined in ultrahigh vacuum, dry nitrogen, and humid air environments. The DLC films were produced by the direct impact of an ion beam (composed of a 3:17 mixture of Ar and CH4) at ion energies of 1500 and 700 eV and an RF power of 99 W. Sliding friction experiments were conducted with hemispherical CVD diamond pins sliding on four different carbon-base coating systems: DLC films on CVD diamond; DLC films on silicon; as-deposited, fine-grain CVD diamond; and carbon-ion-implanted, fine-grain CVD diamond on silicon. Results indicate that in ultrahigh vacuum the ion-beam-deposited DLC films on fine-grain CVD diamond (similar to the ion-implanted CVD diamond) greatly decrease both the friction and wear of fine-grain CVD diamond films and provide solid lubrication. In dry nitrogen and in humid air, ion-beam-deposited DLC films on fine-grain CVD diamond films also had a low steady-state coefficient of friction and a low wear rate. These tribological performance benefits, coupled with a wider range of coating thicknesses, led to longer endurance life and improved wear resistance for the DLC deposited on fine-grain CVD diamond in comparison to the ion-implanted diamond films. Thus, DLC deposited on fine-grain CVD diamond films can be an effective wear-resistant, lubricating coating regardless of environment.

Miyoshi, Kazuhisa↗
DOE OSTI2014

Study on electrical properties of metal/GaSb junctions using metal-GaSb alloys

We study the metal-GaSb alloy formation, the structural properties and the electrical characteristics of the metal-alloy/GaSb diodes by employing metal materials such as Ni, Pd, Co, Ti, Al, and Ta, in order to clarify metals suitable for GaSb p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) as metal-GaSb alloy source/drain (S/D). It is found that Ni, Pd, Co, and Ti can form alloy with GaSb by rapid thermal annealing at 250, 250, 350, and 450 °C, respectively. The Ni-GaSb and Pd-GaSb alloy formation temperature of 250 °C is lower than the conventional dopant activation annealing for ion implantation, which enable us to lower the process temperature. The alloy layers show lower sheet resistance (R{sub Sheet}) than that of p{sup +}-GaSb layer formed by ion implantation and activation annealing. We also study the electrical characteristics of the metal-alloy/GaSb junctions. The alloy/n-GaSb contact has large Schottky barrier height (ϕ{sub B}) for electrons, ∼0.6 eV, and low ϕ{sub B} for holes, ∼0.2 eV, which enable us to realize high on/off ratio in pMOSFETs. We have found that the Ni-GaSb/GaSb Schottky junction shows the best electrical characteristics with ideal factor (n) of 1.1 and on-current/off-current ratio (I{sub on}/I{sub off}) of ∼10{sup 4} among the metal-GaSb alloy/GaSb junctions evaluated in the present study. These electrical properties are also superior to those of a p{sup +}-n diode fabricated by Be ion implantation with activation annealing at 350 °C. As a result, the Ni-GaSb alloy can be regarded as one of the best materials to realize metal S/D in GaSb pMOSFETs.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗