Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “INTERSTITIALS”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 469 records · Page 26
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Diffusion of alloying and fission atoms in α-U investigated by first-principles calculation

Stability and diffusion of small defect clusters containing alloying or fission atoms (“F” is used to represent both atoms) in an α-uranium (U) crystal are investigated using first-principles calculations. Here, results indicate that different stable defect structures are observed for an interstitial defect and a cluster (F n V m ) containing different alloying or fission atoms and vacancies. An interstitial defect is found to be most stable either at the center of a pyramid pentahedron or in a 〈010〉 mixed dumbbell configuration and the latter one is reported for the first time. Formation energy of a small F n V m cluster depends on the distribution of vacancies. Based on these stable defects, new migration energies and paths have been explored in this work. Anisotropic migration of an interstitial defect by jumping between nearest centers of two pyramid pentahedrons or jumping between two mixed U-Zr dumbbells has been suggested. Furthermore, a new migration-rotation mechanism has been explored for the first time for a FV 2 cluster, resulting in a 3D diffusion. Finally, the effect of substitutional Pu atoms on the migration of a FV 2 cluster suggests that optimizing the Pu concentration may prohibit the diffusion of some alloying or fission atoms, increasing the safe performance of metallic fuels.

3D diffusion↗
DOE OSTI2015

Structural stability and electronic properties of β-tetragonal boron: A first-principles study

It is known that elemental boron has five polymorphs: α- and β-rhombohedral, α- and β-tetragonal, and the high-pressure γ phase. β-tetragonal (β-t) boron was first discovered in 1960, but there have been only a few studies since then. We have thoroughly investigated, using first-principles calculations, the atomic and electronic structures of β-t boron, the details of which were not known previously. The difficulty of calculation arises from the fact that β-t boron has a large unit cell that contains between 184 and 196 atoms, with 12 partially-occupied interstitial sites. This makes the number of configurations of interstitial atoms too great to calculate them all. By introducing assumptions based on symmetry and preliminary calculations, the number of configurations to calculate can be greatly reduced. It was eventually found that β-t boron has the lowest total energy, with 192 atoms (8 interstitial atoms) in an orthorhombic lattice. The total energy per atom was between those of α- and β-rhombohedral boron. Another tetragonal structure with 192 atoms was found to have a very close energy. The valence bands were fully filled and the gaps were about 1.16 to 1.54 eV, making it comparable to that of β-rhombohedral boron. - Graphical abstract: Electronic density distribution for the lowest-energy configuration (N=192) viewed from the 〈1 0 0〉 direction. Left: isosurface (yellow) at d=0.09 electrons/a.u.{sup 3} Right: isosurface (orange) at d=0.12 electrons/a.u.{sup 3}. - Highlights: • β-tetragonal boron was thoroughly investigated using first-principles calculations. • The lowest energy structure contains 192 atoms in an orthorhombic lattice. • Another tetragonal structure with 192 atoms has a very close energy. • The total energy per atom is between those of α- and β-rhombohedral boron. • The band gap of the lowest energy structure is about 1.16 to 1.54 eV.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2017

Doping and energy band modulation of nanoporous electrodes for enhancing power conversion efficiency of dye-sensitized solar cells

Highlights: • Cd and La are co-doped into TiO{sub 2} by sol-gel method. • La dopant modulates particle size to enhance dye adsorption. • Cd dopant causes decrease in band gap of TiO{sub 2} and creates trap sites. • Only small amount of Cd dopant required for the favorable decrease in band gap. • 24% of efficiency increment for 0.1 mol% Cd-La TiO{sub 2} compared to pure TiO{sub 2}. - Abstract: This work report, for the first time, the co-doping of mesoporous TiO{sub 2} with Cd{sup 2+} and La{sup 3+} cations for improved performance of dye-sensitized solar cells (DSSCs). Cd{sup 2+} ions modify the TiO{sub 2} lattice interstitially and lower the band gap enabling better electron injection. La{sup 3+} ions, having a larger ionic radius compared to that of Ti{sup 4+} ions, occupy interstitial sites and modulate particle size which increase surface area, hence the dye adsorption. The result demonstrates that DSSC employed with 0.1 mol% Cd-La co-doped TiO{sub 2} anode an increase in power conversion efficiency of 24% compared to DSSC with pure TiO{sub 2} anode. The doping concentration has to remain low as not to completely transform the morphology of TiO{sub 2} and to decrease the number of oxygen vacancies forming trap sites for recombination. The selection of ionic radius of dopants is significant as they can modify the TiO{sub 2} lattice either by substitution or interstitial of titanium ions.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Protecting groups in insertion chemistry: Site-selective positioning of lithium ions in intercalation hosts

The expanding toolbox of functionalization chemistries for selectively installing moieties on specific sites of a substrate underpins almost all modern organic and biochemical syntheses. Likewise, the installation of mobile guest ions in specific interstitial sites and their transport along specific diffusion pathways forms the basis of modern lithium (Li)-ion battery electrodes. Many insertion hosts afford a diverse range of accessible interstitial sites. However, site-selective positioning of cations with atomic precision remains almost entirely unexplored. Here, we show that by deciphering site preferences of co/pre-intercalated cations, we can position Li ions in four distinct sites within a 1D ζ-V 2 O 5 insertion host. The use of topochemistry to effect single-crystal-to-single-crystal transformations enables atomic-resolution mapping of the selective positioning of Li ions through single-crystal X-ray diffraction. Here we image interstitial sites that are occupied at high depths of discharge, thereby obtaining unprecedented structural insight into “fully stuffed” frameworks critical for the realization of high-energy-density intercalation electrodes.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2014

Modeling radiation damage near grain boundary in helium-doped α-iron

Molecular dynamics (MD) simulations are performed to investigate how Σ3<110> (121) symmetric tilt grain boundary (GB) affects point defects and defect clusters in He-doped α-iron at 300 K in picosecond time scales. Molecular statics calculations are also performed and show that the formation energy is reduced in the GB, and the GB acts as a good sink for point defects especially for interstitial He and self-interstitial atoms (SIAs). It is observed that the average size of HenVm (m>n) clusters becomes smaller in the GB-containing Fe system. It is also found that the number of HenV (n=2, 3) clusters in the GB region decreases, while the number of the HeV clusters increases. The GBs loaded with substitutional or interstitial helium atoms are found to facilitate the growth of helium clusters in the GB region.

36 MATERIALS SCIENCE↗
DOE OSTI2026

The impact of chemistry on anion migration in bixbyite-structured lanthanide oxides

This manuscript describes atomistic calculations of oxygen vacancy and interstitial migration in bixbyite structured lanthanide oxides. We examine two types of compounds, one in which only one type of lanthanide cation is present and a second class in which two lanthanides are present in a 3:1 ratio as dictated by the symmetry of the bixbyite crystal structure. Using temperature accelerated dynamics and the nudged elastic band method, we quantify the role of chemistry on the energy barriers for the most important pathways for both vacancy and interstitial migration. We then analyze the impact of these variations on the overall diffusivity of each defect, quantifying the contribution of each pathway using the theory of kinosons. We find that vacancy mobility can vary by as much as three orders of magnitude through changes in chemistry at 500 K. Changes in interstitial mobility are more modest but can still vary by an order of magnitude. This points to the ability to tune the mass transport characteristics of these compounds through appropriate choices in chemistry. We have also included supplementary information containing the atomic structures of the relevant pathways.

36 MATERIALS SCIENCE↗
DOE OSTI2018

A First-Principles Density Function Theory Study of Tritium Diffusion in Li 2 ZrO 3 : Application for Producing Tritium

The ceramic material Li 2 ZrO 3 has superior thermo-physical and thermo-chemical properties and is highly compatible with other blanket materials used in nuclear reactors. Like LiAlO 2 , it could be used in the form of an annular pellet in tritium-producing burnable absorber rods (TPBARs) to produce tritium( 3 H) upon thermal neutron irradiation of lithium isotope ( 6 Li). The radiation damaged pellet crystal contains vacancies, defects of its constituent elements, and several other trapping sites which hinder the 3 H diffusion process and releasing behavior. In this study, we investigate the diffusion mechanisms of 3 H and O 3 H species in Li 2 ZrO 3 ceramic pellet in order to understand the effects on diffusion barriers and diffusion coefficients due to the presence of interstitial and substitutional Li defects, hydroxide (O– 3 H) vacancy defect, and of the interactions of 3 H with O-vacancies in the radiation damaged Li 2 ZrO 3 crystal. We consider several possible diffusion pathways of interstitial and substitutional 3 H and its species in a defective supercell and calculate the activation energy barrier profiles. We find that the smallest activation energy barrier is 0.3 eV and corresponding diffusion coefficient at 600 K is 1.93 × 10 –9 m 2 /s for 3 H substitutional diffusion. The smallest 3 H interstitial diffusion barrier and diffusion coefficient are found to be 0.34 eV and 3.25 × 10 –9 m 2 /s. By examining several channels for diffusion, our results show the most likely diffusion mechanism of 3 H migration is occurring along the c-direction by exchange of 3 H within and between different Li sites. Here, our calculated results reveal that the smallest energy barrier for O 3 H diffusion is 0.75 eV which is when O 3 H is diffusing to the O–Li vacancy pair and the corresponding diffusion coefficient is 6.31 × 10 –13 m 2 /s. In terms of 3 H diffusion, the obtained results indicate that the performance of Li 2 ZrO 3 could be better than γ-LiAlO 2 , a widely used ceramic material in TPBAR for producing 3 H.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

Structure and Formation Mechanism of Black TiO 2 Nanoparticles

The remarkable properties of black TiO 2 are due to its disordered surface shell surrounding a crystalline core. However, the chemical composition and the atomic and electronic structure of the disordered shell and its relationship to the core remain poorly understood. Using advanced transmission electron microscopy methods, we show that the outermost layer of black TiO 2 nanoparticles consists of a disordered Ti 2 O 3 shell. The measurements show a transition region that connects the disordered Ti 2 O 3 shell to the perfect rutile core consisting first of four to five monolayers of defective rutile, containing clearly visible Ti interstitial atoms, followed by an ordered reconstruction layer of Ti interstitial atoms. Our data suggest that this reconstructed layer presents a template on which the disordered Ti 2 O 3 layers form by interstitial diffusion of Ti ions. In contrast to recent reports that attribute TiO 2 band-gap narrowing to the synergistic action of oxygen vacancies and surface disorder of nonspecific origin, our results point to Ti 2 O 3 , which is a narrow-band-gap semiconductor. In conclusion, as a stoichiometric compound of the lower oxidation state Ti 3+ it is expected to be a more robust atomic structure than oxygen-deficient TiO 2 for preserving and stabilizing Ti 3+ surface species that are the key to the enhanced photocatalytic activity of black TiO 2 .

36 MATERIALS SCIENCE↗
DOE OSTI2024

Iodide manipulation using zinc additives for efficient perovskite solar minimodules

Abstract Interstitial iodides are the most critical type of defects in perovskite solar cells that limits efficiency and stability. They can be generated during solution, film, and device processing, further accelerating degradation. Herein, we find that introducing a small amount of a zinc salt- zinc trifluoromethane sulfonate (Zn(OOSCF 3 ) 2 ) in the perovskite solution can control the iodide defects in resultant perovskites ink and films. CF 3 SOO ̶ vigorously suppresses molecular iodine formation in the perovskites by reducing it to iodide. At the same time, zinc cations can precipitate excess iodide by forming a Zn-Amine complex so that the iodide interstitials in the resultant perovskite films can be suppressed. The perovskite films using these additives show improved photoluminescence quantum efficiency and reduce deep trap density, despite zinc cations reducing the perovskite grain size and iodide interstitials. The zinc additives facilitate the formation of more uniform perovskite films on large-area substrates (78-108 cm 2 ) in the blade-coating process. Fabricated minimodules show power conversion efficiencies of 19.60% and 19.21% with aperture areas of 84 and 108 cm 2 , respectively, as certified by National Renewable Energy Laboratory (NREL), the highest efficiency certified for minimodules of these sizes.

14 SOLAR ENERGY↗
DOE OSTI2015

Radiation tolerance of nanocrystalline ceramics: Insights from yttria stabilized zirconia

Materials for applications in hostile environments, such as nuclear reactors or radioactive waste immobilization, require extremely high resistance to radiation damage, such as resistance to amorphization or volume swelling. Nanocrystalline materials have been reported to present exceptionally high radiation-tolerance to amorphization. In principle, grain boundaries that are prevalent in nanomaterials could act as sinks for point-defects, enhancing defect recombination. In this paper we present evidence for this mechanism in nanograined Yttria Stabilized Zirconia (YSZ), associated with the observation that the concentration of defects after irradiation using heavy ions (Kr⁺, 400 keV) is inversely proportional to the grain size. HAADF images suggest the short migration distances in nanograined YSZ allow radiation induced interstitials to reach the grain boundaries on the irradiation time scale, leaving behind only vacancy clusters distributed within the grain. Because of the relatively low temperature of the irradiations and the fact that interstitials diffuse thermally more slowly than vacancies, this result indicates that the interstitials must reach the boundaries directly in the collision cascade, consistent with previous simulation results. Concomitant radiation-induced grain growth was observed which, as a consequence of the non-uniform implantation, caused cracking of the nano-samples induced by local stresses at the irradiated/non-irradiated interfaces.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Insights into dynamic processes of cations in pyrochlores and other complex oxides

Complex oxides are critical components of many key technologies, from solid oxide fuel cells and superionics to inert matrix fuels and nuclear waste forms. In many cases, understanding mass transport is important for predicting performance and, thus, extensive effort has been devoted to understanding mass transport in these materials. However, most work has focused on the behavior of oxygen while cation transport has received relatively little attention, even though cation diffusion is responsible for many phenomena, including sintering, radiation damage evolution, and deformation processes. Here, we use accelerated molecular dynamics simulations to examine the kinetics of cation defects in one class of complex oxides, A₂B₂O₇ pyrochlore. In some pyrochlore chemistries, B cation defects are kinetically unstable, transforming to A cation defects and antisites at rates faster than they can diffuse. When this occurs, transport of B cations occurs through defect processes on the A sublattice. Further, these A cation defects, either interstitials or vacancies, can interact with antisite disorder, reordering the material locally, though this process is much more efficient for interstitials than vacancies. Whether this behavior occurs in a given pyrochlore depends on the A and B chemistry. Pyrochlores with a smaller ratio of cation radii exhibit this complex behavior, while those with larger ratios exhibit direct migration of B interstitials. Similar behavior has been reported in other complex oxides such as spinels and perovskites, suggesting that this coupling of transport between the A and B cation sublattices, while not universal, occurs in many complex oxide.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Stabilities and defect-mediated lithium-ion conduction in a ground state cubic Li 3 N structure

A stable ground state structure with cubic symmetry of Li 3 N (c-Li 3 N) is found by ab initio initially symmetric random-generated crystal structure search method. Gibbs free energy, calculated within quasi-harmonic approximation, shows that c-Li 3 N is the ground state structure for a wide range of temperature. The c-Li 3 N structure has a negative thermal expansion coefficient at temperatures lower than room temperature, due mainly to two transverse acoustic phonon modes. This c-Li 3 N phase is a semiconductor with an indirect band gap of 1.90 eV within hybrid density functional calculation. We also investigate the migration and energetics of native point defects in c-Li 3 N, including lithium and nitrogen vacancies, interstitials, and anti-site defects. Lithium interstitials are found to have a very low migration barrier (~0.12 eV) and the lowest formation energy among all possible defects. Thus, the ionic conduction in c-Li 3 N is expected to occur via an interstitial mechanism, in contrast to that in the well-known α-Li 3 N phase which occurs via a vacancy mechanism.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2016

The effects of cation–anion clustering on defect migration in MgAl 2 O 4

Magnesium aluminate spinel (MgAl 2 O 4 ), like many other ceramic materials, offers a range of technological applications, from nuclear reactor materials to military body armor. For many of these applications, it is critical to understand both the formation and evolution of lattice defects throughout the lifetime of the material. We use the Speculatively Parallel Temperature Accelerated Dynamics (SpecTAD) method to investigate the effects of di-vacancy and di-interstitial formation on the mobility of the component defects. From long-time trajectories of the state-to-state dynamics, we characterize the migration pathways of defect clusters, and calculate their self-diffusion constants across a range of temperatures. We find that the clustering of Al and O vacancies drastically reduces the mobility of both defects, while the clustering of Mg and O vacancies completely immobilizes them. For interstitials, we find that the clustering of Mg and O defects greatly reduces O interstitial mobility, but has only a weak effect on Mg. Lastly, these findings illuminate important new details regarding defect kinetics relevant to the application of MgAl 2 O 4 in extreme environments.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Realization of higher thermoelectric performance by dynamic doping of copper in n-type PbTe

It is a great challenge to optimize a material's thermoelectric performance due to the strong correlation between its thermoelectric-transport properties, especially the electrical-transport properties. Optimizing the peak zT using a constant carrier concentration is commonly adopted because of the difficulty in realizing the optimum temperature-dependent carrier concentration, but this is not meaningful for real applications, in which the average zT value over the working temperature range is much more important. Here we propose an effective strategy involving the dynamic doping effect of interstitial Cu atoms to fully optimize the electrical-transport properties of n-type PbTe over a wide temperature range. By using Cu intercalation, the temperature-dependent carrier concentration of PbTe is found to well match the theoretically optimal profile. Furthermore, high carrier mobility is largely maintained because the dynamic behavior of the interstitial Cu does not alter the band structure and therefore change the effective mass. Consequently, a peak zT of ~1.3 and a calculated leg efficiency of 12% were achieved for the sample with 0.2 at% Cu. Based on our findings, we further proposed a concept of ‘interstitial engineering’ to reinforce the dynamic doping effect, which is of fundamental importance for optimizing the thermoelectric properties.

25 ENERGY STORAGE↗
DOE OSTI2026

Hydrogen defects in LaBi 2 O 4 X (X = Cl, Br, and I) Sillén oxyhalide phases and their impacts on ionic transport

Sillén oxyhalides have recently emerged as promising materials for both photocatalytic and ionic transport applications, yet the role of likely-ubiquitous hydrogen-related defects in these layered compounds remains largely unexplored. Here, we employ first-principles defect calculations to investigate incorporation energetics for hydrogen- and oxygen-related defects, as well as their migration barriers in LaBi 2 O 4 X (X = Cl, Br, I) phases. We find that hydrogen interstitials, particularly protonic species (H i + ), are readily accommodated within the open Bi–O layers. Protons compete with oxygen vacancy donors (V O 2+ ) and charge-compensate with oxygen interstitial acceptors (O i 2− ). By linking hydrogen defect formation to water- and oxygen-related redox equilibria, we reveal that V O 2+ facilitates H i + incorporation, while O i 2− promotes interstitial hydroxide formation, establishing a direct connection between proton and oxide-ion transport. Calculated migration barriers indicate that ionic diffusion is confined to Bi–O layers with low barriers of 0.20–0.25 eV for H i + and 0.14–0.25 eV for V O 2+ , suggesting that the materials contain intrinsic pathways for mixed ionic conduction. These results provide a microscopic picture of hydrogen behavior in Sillén oxyhalides and point to design strategies for integrating protonic and oxide-ion transport in layered oxyhalide electrolytes. Band-edge alignment analysis shows that LaBi 2 O 4 I provides the optimal combination of hydrogen solubility, oxygen defect stability, and mixed ionic conductivity, highlighting its potential for low-temperature electrochemical and energy-conversion applications. Overall, this work establishes the defect-driven origin of hydrogen transport in Sillén oxyhalides and expands their applicability beyond photocatalysis to mixed ionic conduction and hydrogen electrochemistry.

Energy - Conversion↗
DOE OSTI2014

Density functional theory calculations of stability and diffusion mechanisms of impurity atoms in Ge crystals

Ge-based substrates are being developed for applications in advanced nano-electronic devices because of their higher intrinsic carrier mobility than Si. The stability and diffusion mechanism of impurity atoms in Ge are not well known in contrast to those of Si. Systematic studies of the stable sites of 2nd to 6th row element impurity atoms in Ge crystal were undertaken with density functional theory (DFT) and compared with those in Si crystal. It was found that most of the impurity atoms in Ge were stable at substitutional sites, while transition metals in Si were stable at interstitial sites and the other impurity atoms in Si were stable at substitutional sites. Furthermore, DFT calculations were carried out to clarify the mechanism responsible for the diffusion of impurity atoms in Ge crystals. The diffusion mechanism for 3d transition metals in Ge was found to be an interstitial-substitutional diffusion mechanism, while in Si this was an interstitial diffusion mechanism. The diffusion barriers in the proposed diffusion mechanisms in Ge and Si were quantitatively verified by comparing them to the experimental values in the literature.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Pyroelectric-field driven defects diffusion along c-axis in ZnO nanobelts under high-energy electron beam irradiation

When ZnO nanobelts are exposed to a high-dose electron probe of several nanometers to hundred nanometers in diameter inside a transmission electron microscope, due to the radiolysis effect, part of oxygen atoms will be ejected into the vacuum and leaving a Zn-ion rich surface with a pit appearance at both the electron-entrance and electron-exit surfaces. At the same time, a temperature distribution is created around the electron probe due to local beam heating effect, which generates a unidirectional pyroelectric field. This pyroelectric field is strong enough to drive Zn ions moving along its positive c-axis direction as interstitial ions. In the first case, for the ZnO nanobelts with c-axis lie in their large surfaces, defects due to the aggregation of Zn interstitial ions will be formed at some distances of 30–50 nm approximately along the c-axis direction from the electron beam illuminated area. Alternatively, for the ZnO nanobelts with ±(0001) planes as their large surfaces, the incident electron beam is along its c-axis and the generated pyroelectric field will drive the interstitial Zn-ions to aggregate at the Zn terminated (0001) surface where the local electrical potential is the lowest. Such electron beam induced damage in ZnO nanostructures is suggested as a result of Zn ion diffusion driven by the temperature gradient induced pyroelectric field along c-axis. Our study shows a radiation damage caused by electron beam in transmission electron microscopy, especially when the electron energy is high.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Structural perturbations of epitaxial α-(Fe{sub 1−x}V{sub x}){sub 2}O{sub 3} thin films driven by excess oxygen near the surface

We examine the structure and composition of phase-pure epitaxial α-(Fe{sub 1−x}V{sub x}){sub 2}O{sub 3} thin films deposited on α-Al{sub 2}O{sub 3}(0001) substrates by oxygen-plasma-assisted molecular beam epitaxy for 0 ≤ x ≤ ∼0.5. The films crystallize in the corundum lattice, with vanadium substituting for iron throughout. Vanadium cations exhibit the expected 3+ charge state in the bulk, but exhibit higher valences nearer to the surface, most likely because of excess oxygen in interstitial sites near the surface. The extent of vanadium oxidation beyond the 3+ state is inversely proportional to x. The gradation of vanadium valence with depth has an impact on local bonding geometries, and could be highly significant in this material's efficiency as a photocatalyst.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗