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At least 469 records · Page 26

Thermal transport in compensated semimetals: Effect of electron-electron scattering on Lorenz ratio

It is well known that the electronic thermal conductivity of clean compensated semimetals can be greatly enhanced over the electric conductivity by the availability of an ambipolar mechanism of conduction, whereby electrons and holes flow in the same direction experiencing negligible Coulomb scattering as well as negligible impurity scattering. This enhancement—resulting in a breakdown of the Wiedemann-Franz law with an anomalously large Lorenz ratio—has been recently observed in two-dimensional monolayer and bilayer graphene near the charge neutrality point. In contrast to this, three-dimensional compensated semimetals such as WP 2 and Sb are typically found to show a reduced Lorenz ratio. Here, we investigate the reasons for this difference, focusing on the low-temperature regime where the electron-electron scattering is expected to dominate over other scattering mechanisms. We show that the different regimes of Fermi statistics (nondegenerate electron-hole liquid in graphene versus degenerate electron-hole liquid in compensated semimetals) are not sufficient to explain the reduction of the Lorenz ratio in the latter. We propose that the solution of the puzzle lies in the large separation of electron and hole pockets in momentum space, which allows compensated semimetals to sustain sizable regions of electron-hole accumulation near the contacts. These accumulations suppress the ambipolar conduction mechanism and effectively split the system into two independent electron and hole conductors. We present a quantitative theory of the crossover from ambipolar to unipolar conduction as a function of the size of the electron-hole accumulation regions, and show that it naturally leads to a sample-size-dependent thermal conductivity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Effects of nuclear radiation on a high-reliability silicon power diode. 4: Analysis of reverse bias characteristics

The effects of nuclear radiation on the reverse bias electrical characteristics of one hundred silicon power diodes were investigated. On a percentage basis, the changes in reverse currents were large but, due to very low initial values, this electrical characteristic was not the limiting factor in use of these diodes. These changes were interpreted in terms of decreasing minority carrier lifetimes as related to generation-recombination currents. The magnitudes of reverse voltage breakdown were unaffected by irradiation.

Been, J. F.↗

Testing Protocol Proposal to Identify and Evaluate Candidate Materials to Substitute for Silverized Teflon in Thermal Control Applications

Electrostatic discharge (ESD) has been shown to be the primary cause of several glitches in spacecraft operations. It appears that charged particles encountered in the natural environment in certain orbits can collect on the outer surfaces of a spacecraft, building up a charge of several thousand volts. If the potential exceeds the breakdown voltage of the charged material, then an ESD will occur. ESD events involving relatively low voltages, on the order of 100 V, have been shown to damage electronic components. When ESD occurs, electronic and electrical components can be damaged, computer instructions can be garbled, and ablation of material from the spacecraft may occur; degrading both the performance of the thermal control blankets, and the cleanliness of any surfaces on which the detritus becomes deposited. There appear to be six ways to prevent or mitigate the effects of ESD: (1) Choose an orbit where charging is not a problem; (2) Carry extra electromagnetic shielding; (3) Provide redundancy in components and programming; (4) Provide for active dissipation of the charge, by generating a plasma with which to bathe susceptible surfaces; (5) Provide for passive dissipation from a plasma contactors on the susceptible surfaces; and (6) Provide thermal control blankets that do not hold a charge, i.e., that are conductive enough to bleed a charge off harmlessly. These six options are discussed in detail in Losure (1996). Of these six options, number 1 is not always practical, given other requirements of the mission; 2, 3, 4 and 5 will require that extra mass in the form of shielding, etc., be carried by the spacecraft. The most attractive option from a mass and energy point of view seems to be that of finding a material which matches the other performance characteristics of the current thermal control blankets without their tendency to build up an electrostatic charge. The goal of this paper is to describe and justify a testing program which will lead to the approval of materials of this kind.

Losure, Nancy S.↗

An Improved Thermal Conductivity Polyurethane Composite for a Space Borne 20KV Power Supply

This effort was designed to find a way to reduce the temperature rise of critical components of a 20KV High Voltage Power Supply (HVPS) by improving the overall thermal conductivity of the encapsulated modules. Three strategies were evaluated by developing complete procedures, preparing samples, and performing tests. The three strategies were: 1. Improve the thermal conductivity of the polyurethane encapsulant through the addition of thermally conductive powder while minimizing impact on other characteristics of the encapsulant. 2. Improve the thermal conductivity of the polyurethane encapsulated assembly by the addition of a slab of thermally conductive, electrically insulating material, which is to act as a heat spreader. 3. Employ a more thermally conductive substrate (Al203) with the existing encapsulation scheme. The materials were chosen based on the following criteria: high dielectric breakdown strength; high thermal conductivity, ease of manufacturing, high compliance, and other standard space qualified materials properties (low out-gassing, etc.). An optimized cure was determined by a statistical design of experiments for both filled and unfilled materials. The materials were characterized for the desired properties and a complete process was developed and tested. The thermal performance was substantially improved and the strategies may be used for space flight.

Pb free↗

Characterizing Electrical Arc Behavior in Ion Engines

Gridded ion engines represent a class of electric thrusters characterized by high propulsive efficiency and high total impulse capabilities. These engines operate by applying high voltage to multi-aperture electrodes, thereby electrostatically accelerating plasma to generate thrust. Within the course of normal operations, periodic occurrences of high voltage breakdowns manifest within the thruster. These breakdowns constitute an inherent aspect of operation, with observations indicating a diminishing frequency and total count over the thruster's operational lifespan. To safeguard the propulsion system during such occurrences, the power processing unit (PPU) employs an automated arc extinction sequence, termed "recycle," which is triggered upon detection of an over-current condition. The initial phase of this sequence involves momentarily deactivating the high voltage and reducing the discharge current to a predetermined level, minimizing plasma impingement as the ion beam is defocused. The high voltage is subsequently reapplied, and the discharge current is returned to its nominal value. The entire sequence typically spans approximately 800 milliseconds. Throughout a recycle event, the propulsion system experiences various current and voltage transients as the arc current traverses the system and different power supplies are toggled on and off.

electric propulsion↗

A Comparison of Radiation-Induced and High-Field Electrically Stress-Induced Interface Defects in Si/SiO 2 MOSFETs via Electrically Detected Magnetic Resonance

Here, we utilize electrically detected magnetic resonance (EDMR) measurements to compare high-field stressed, and gamma irradiated Si/SiO 2 metal–oxide–silicon (MOS) structures. We utilize spin-dependent recombination (SDR) EDMR detected using the Fitzgerald and Grove dc I-V approach to compare the effects of high-field electrical stressing and gamma irradiation on defect formation at and near the Si/SiO 2 interface. As anticipated, both greatly increase the concentration of P b centers (silicon dangling bonds at the interface) densities. The irradiation also generated a significant increase in the dc I-V EDMR response of E' centers (oxygen vacancies in the SiO 2 films), whereas the generation of an E' EDMR response in high-field stressing is much weaker than in the gamma irradiation case. These results likely suggest a difference in their physical distribution resulting from radiation damage and high electric field stressing.

42 ENGINEERING↗

Cellulose Triacetate Dielectric Films For Capacitors

Cellulose triacetate investigated for use as dielectric material in high-energy-density capacitors for pulsed-electrical-power systems. Films of cellulose triacetate metalized on one or both sides for use as substrates for electrodes and/or as dielectrics between electrodes in capacitors. Used without metalization as simple dielectric films. Advantages include high breakdown strength and self-healing capability.

Yen, Shiao-Ping S.↗

Feasibility of Micro-Multilayer Multifunctional Electrical Insulation (MMEI) System for High Voltage Applications

The newly patented micro-multilayer multifunctional electrical insulation (MMEI) system was developed for future electric aircraft applications which critically require lightweight but high voltage (HV), high temperature, and corona or partial discharge (PD) resistant insulation. During the initial development stages, the concept and practicability of the MMEI system were successfully validated with its exceptionally high dielectric breakdown voltages. The multilayer structures were optimized in terms of material type, individual layer thickness, and overall layer configuration along with potential mechanisms identified for its superior performance. Subsequently, scalability, manufacturability, and commercial applicability of the MMEI system were demonstrated with the 1 meter long, 3-phase HV, high power (HP) bus bar prototypes. Two prototypes, one with the conventional SOA insulation system including Mica sheet and the other with an optimized MMEI, were designed, fabricated, and tested successfully. Both prototypes passed both HiPot and PD tests up to the highest test voltage available, 15 kVAC, although the latter showed a slight increase in PD activities at 12.5 kV. However, the prototype with MMEI was 15% lighter or 12% thinner than the other one. Current efforts to significantly enhance the PD resistance of the MMEI system by employing semiconductive shielding layers, which can be also multifunctional, e.g., electromagnetic interference shielding, moisture blocking, heat dissipation, for various HV applications are also discussed in this paper.

Novel Electrical Insulation↗

Feasibility of Micro-Multilayer Multifunctional Electrical Insulation (MMEI) System for High Voltage Applications

The newly patented micro-multilayer multifunctional electrical insulation (MMEI) system was developed for future electric aircraft applications which critically require lightweight but high voltage (HV), high temperature, and corona or partial discharge (PD) resistant insulation. During the initial development stages, the concept and practicability of the MMEI system were successfully validated with its exceptionally high dielectric breakdown voltages. The multilayer structures were optimized in terms of material type, individual layer thickness, and overall layer configuration along with potential mechanisms identified for its superior performance. Subsequently, scalability, manufacturability, and commercial applicability of the MMEI system were demonstrated with the 1 meter long, 3-phase HV, high power (HP) bus bar prototypes. Two prototypes, one with the conventional SOA insulation system including Mica sheet and the other with an optimized MMEI, were designed, fabricated, and tested successfully. Both prototypes passed both HiPot and PD tests up to the highest test voltage available, 15 kVAC, although the latter showed a slight increase in PD activities at 12.5 kV. However, the prototype with MMEI was 15% lighter or 12% thinner than the other one. Current efforts to significantly enhance the PD resistance of the MMEI system by employing semiconductive shielding layers, which can be also multifunctional, e.g., electromagnetic interference shielding, moisture blocking, heat dissipation, for various HV applications are also discussed in this paper.

Novel Electrical Insulation↗

Nanoscale Engineering of Polymorphism in Cu 2 Se-Based Composites

Crystal polymorphism selection during synthesis is extremely challenging. However, promoting the formation of a specific metastable polymorph enables modulation of the functional properties of phase-change materials through alteration of the relative abundance of various polymorphs. Here, we demonstrate the stabilization of the superionic β-Cu 2 Se phase under ambient conditions and the direct control over the relative ratio between the α-Cu 2 Se and β-Cu 2 Se polymorphs in (x)CuGaSe 2 /(1-x)Cu 2 Se composites using CuGaSe 2 nanoseeds. Here, we found that the small lattice mismatch between β-Cu 2 Se (cubic) and the ab plane of tetragonal CuGaSe 2 nanoseeds promotes the formation of low-energy coherent CuGaSe 2 /β-Cu 2 Se interfaces leading to preferential stabilization of β-Cu 2 Se. Astonishingly, the hierarchical microstructure of the resulting composites enables a remarkable decoupling of charge and heat transport, which is manifested by a breakdown of the Wiedemann-Franz law

36 MATERIALS SCIENCE↗

β -Ga 2 O 3 Schottky barrier diodes with 4.1 MV/cm field strength by deep plasma etching field-termination Available

In this work, we demonstrate a deep mesa etch design for efficient edge field termination in β-Ga 2 O 3 Schottky barrier diodes (SBDs). The proposed design enabled parallel plate fields higher than 4.1 MV/cm with negligible change to the device ON characteristics. The effect of BCl 3 /Cl 2 -based dry etch on (100) and (010) etched vertical sidewalls is also analyzed. A remarkable anisotropy in depletion was observed for etch along (100) and (010) sidewalls. In conclusion, this work provides insight into the impact of etching on n-type Ga 2 O 3 and shows a promising method to realize efficient field termination for high breakdown field strength SBDs.

42 ENGINEERING↗

Lightning Current Propagation in Electrical Conduit

Investigation of lightning strikes to conductors ran through long spans of rigid steel conduit was performed. An overdamped-exponential current waveform with controlled peaks and rise rates was used to inject simulated lightning strikes. The impact of the length of wire, length of conduit, grounding location/s, and load type was investigated. Breakdown of 600 V, 12 AWG, THHN insulated wire (3.23 mm OD, 2 mm conductor diameter) was observed for voltages above 45 kV. The presence of resistive loads (between wire and ground) in excess of 20 ohms, or current rise times in excess of 5 kA/μs were found to consistently produce breakdown between wire and conduit. Practical power circuit elements such as outlets and splices were found to breakdown at voltage levels much below the wire insulation failure threshold.

47 OTHER INSTRUMENTATION↗

Full 3D Kinetic Modeling and Quantification of Positive Streamer Evolution in an Azimuthally Swept Pin-to-Plane Wedge Geometry

Cathode-directed streamer evolution in near atmospheric air is modeled in 3D pin-to-plane geometries using a 3D kinetic Particle-In-Cell (PIC) code that simulates particle-particle collisions via the Direct Simulation Monte Carlo (DSMC) method. Due to the computational challenges associated with a complete 360° volumetric domain, a practical alternative was achieved using a wedge domain and a range of azimuthal angles was explored (5°, 15°, 30°, and 45°) to study possible effects on the streamer growth and propagation due to the finite wedge angle. A DC voltage of 6 kV is administered to a hemispherical anode of radius 100 μm, with a planar cathode held at ground potential, generating an over-volted state with an electric field of 4 MV/m across a 1500 μm gap. The domain is seeded with an initial ion and electron density of 10 18 m -3 at 1 eV temperature confined to a spherical region of radius 100 μm centered at the tip of the anode. The air chemistry model [1] includes standard Townsend breakdown mechanisms (electron-neutral elastic, excitation, ionization, attachment, and detachment collision chemistry and secondary electron emission) as well as streamer mechanisms (photoionization and ion-neutral collisions) via tracking excited state neutrals which can then either quench via collisions or spontaneously emit a photon based on specific Einstein-A coefficients [2, 3]. In this work, positive streamer dynamics are formally quantified for each wedge angle in terms of electron velocity and density as temporal functions of coordinates r, Φ, and z. Applying a random plasma seed for each simulation, particles of interest are tracked with near femtosecond temporal resolution out to 1.4 ns and spatially binned. This process is repeated six times and results are averaged. Prior 2D studies have shown that the reduced electric field, E/n, can significantly impact streamer evolution [4]. We extend the analysis to 3D wedge geometries, to limit computational costs, and examine the wedge angle’s effect on streamer branching, propagation, and velocity. Results indicate that the smallest wedge angle that produced an acceptably converged solution is 30°. The potential effects that a mesh, when under-resolved with respect to the Debye length, can impart on streamer dynamics and numerical heating were not investigated, and we explicitly state here that the smallest cell size was approximately 10 times the minimum λ D in the streamer channel at late times. This constraint on cell size was the result of computational limitations on total mesh count.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Enhancement-Mode GaN Monolithic Bidirectional Switch With Breakdown Voltage Over 3.3 kV

Here, this work demonstrates a GaN enhancement-mode monolithic bidirectional switch (MBDS) with breakdown voltage (BV) higher than 3.3 kV in both polarities. This MBDS is realized on a dual p-GaN gate high electron mobility transistor (HEMT) platform on sapphire substrate. It features a novel dual junction termination extension design for electric field management, which is built on the p-GaN layer in the gate stack and does not require epitaxial regrowth. The GaN MBDS exhibits symmetric on-state characteristics in both directions with a threshold voltage (V th ) of 0.6 V and a low specific on-resistance (R on,sp ) of 5.6 m Ω · cm2. This device presents the highest BV, as well as one of the best BV and R on,sp trade-offs, in all the reported MBDS devices. The R on,sp is lower than the performance limit of conventional BDS realized by two discrete devices. This 3.3 kV GaN MBDS opens the door for developing new circuit topologies and advancing system performance in medium-voltage power electronics.

42 ENGINEERING↗

Electrode configuration for extended plasma confinement

Methods and systems are provided for plasma confinement utilizing various electrode and valve configurations. In one example, a device includes a first electrode positioned to define an outer boundary of an acceleration volume, a second electrode arranged coaxially with respect to the first electrode and positioned to define an inner boundary of the acceleration volume, at least one power supply to drive an electric current along a Z-pinch plasma column between the first second electrodes, and a set of valves to provide gas to the acceleration volume to fuel the Z-pinch plasma column, wherein an electron flow of the electric current is in a first direction from the second electrode to the first electrode. In additional or alternative examples, a shaping part is conductively connected to the second electrode to, in a presence of the gas, cause a gas breakdown of the gas to generate a sheared flow velocity profile.

Meier, Eric T.↗

Apparatus and method for extended plasma confinement

Methods and systems are provided for plasma confinement utilizing various electrode and valve configurations. In one example, a device includes a first electrode positioned to define an outer boundary of an acceleration volume, a second electrode arranged coaxially with respect to the first electrode and positioned to define an inner boundary of the acceleration volume, at least one power supply to drive an electric current along a Z-pinch plasma column between the first second electrodes, and a set of valves to provide gas to the acceleration volume to fuel the Z-pinch plasma column, wherein an electron flow of the electric current is in a first direction from the second electrode to the first electrode. In additional or alternative examples, a shaping part is conductively connected to the second electrode to, in a presence of the gas, cause a gas breakdown of the gas to generate a sheared flow velocity profile.

Shumlak, Uri↗

Analyzing Gases From Decomposing Electrical Insulation

Test fixture holds insulated wire and traps gases emitted by heating of wire. Used with gas chromatograph and/or mass spectrometer, to analyze gases emitted by insulation on wire when wire heated with controlled current in controlled atmosphere to simulate pyrolysis, combustion, and arc tracking. Small, inexpensive, easily maintained, and relatively nonreactive to organic compounds produced during breakdown of insulation.

Moffett, Gary↗