SEARCH · Engineering Papers

Results for “Device”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

SourceResearch connectionFrom yearThrough year

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 469 records · Page 26

All sources NASA NTRS DOE OSTI

DOE OSTI2022

Single site robotic device and related systems and methods

Disclosed herein are various medical device components, including components that can be incorporated into robotic and/or in vivo medical devices. Also disclosed are various medical devices for in vivo medical procedures. Included herein, for example, is a surgical robotic device having an elongate device body, a right robotic arm coupled to a right shoulder assembly, and a left robotic arm coupled to a left shoulder assembly.

Mondry, Jack↗

DOE OSTI2023

Multi-level inverter with mixed device types

Provided is a novel multi-level inverter with mixed device types and methods of controlling same. This novel multi-level inverter topology and control method allows the use of high frequency switching devices for controlled PWM switching, while also using lower frequency switching devices for directional switches. This combination of high frequency PWM switching devices with low frequency directional switching devices allows a cost reduction without a significant performance degradation.

Mekonnen, Ezana T.↗

DOE OSTI2023

Single site robotic device and related systems and methods

Source record↗

DOE OSTI2023

Methods, systems, and devices relating to surgical end effectors

The embodiments disclosed herein relate to various medical device components, including components that can be incorporated into robotic and/or in vivo medical devices, and more specifically including end effectors that can be incorporated into such devices. Certain end effector embodiments include various vessel cautery devices that have rotational movement as well as cautery and cutting functions while maintaining a relatively compact structure. Other end effector embodiments include various end effector devices that have more than one end effector.

42 ENGINEERING↗

DOE OSTI2023

Multi-level inverter with mixed device types

Mekonnen, Ezana T.↗

DOE OSTI2024

Infrared Nanoimaging of Hydrogenated Perovskite Nickelate Memristive Devices

Solid-state devices made from correlated oxides, such as perovskite nickelates, are promising for neuromorphic computing by mimicking biological synaptic function. However, comprehending dopant action at the nanoscale poses a formidable challenge to understanding the elementary mechanisms involved. Here, we perform operando infrared nanoimaging of hydrogen-doped correlated perovskite, neodymium nickel oxide (H-NdNiO 3 , H-NNO), devices and reveal how an applied field perturbs dopant distribution at the nanoscale. This perturbation leads to stripe phases of varying conductivity perpendicular to the applied field, which define the macroscale electrical characteristics of the devices. Hyperspectral nano-FTIR imaging in conjunction with density functional theory calculations unveils a real-space map of multiple vibrational states of H-NNO associated with OH stretching modes and their dependence on the dopant concentration. Moreover, the localization of excess charges induces an out-of-plane lattice expansion in NNO which was confirmed by in situ X-ray diffraction and creates a strain that acts as a barrier against further diffusion. Our results and the techniques presented here hold great potential for the rapidly growing field of memristors and neuromorphic devices wherein nanoscale ion motion is fundamentally responsible for function.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2026

Enabling Long Term, Shelf‐Stable Perovskite Solar Cells: Alumina Barriers to Protect Perovskite Devices from Moisture and Oxygen

Current encapsulation architectures for thin-film metal halide perovskite do not adequately eliminate all ambient stressors. Here, we develop low transmission rate barrier layers using atomic layer deposited (ALD) aluminum oxide grown directly on the completed photovoltaic (PV) device stack to provide an additional seal, prior to full packaging. We investigate the effect of deposition temperature and oxidant chemistries on the barrier growth for protection of perovskite photovoltaic devices. We characterize the layers individually, then integrate into devices to detail the tradeoff between protection and deposition compatibility. To enhance compatibility and impermeability, we present an approach using water as the aluminum oxidant during nucleation and switching from water to ozone for the remainder of the growth. At 50 nm, the barrier results in a water vapor transmission rate (WVTR) of 4.5·10 −4 g/m 2 /day, and 1,000-hour device stability under 45°C with 85% relative humidity without further packaging. This barrier provides sufficient protection to enable minimal degradation of the perovskite solar cells while completely submerged in water for 140 minutes. Additionally, we characterize the oxygen transmission rate (OTR) to be 0.49 cm 3 /m 2 /day at 23°C and 0% relative humidity, which is 1.5 orders of magnitude improvement over the OTR of the current encapsulation.

14 SOLAR ENERGY↗

DOE OSTI2026

New perspectives on materials and device dynamics using time-resolved full-field diffraction X-ray imaging

Understanding how materials evolve during synthesis, processing, or device operation requires experimental access to structural dynamics across wide ranges of length and time scales, often in bulk samples or even within packaged devices. Time-resolved full-field diffraction X-ray microscopy has recently emerged as a powerful way to meet this need by combining the penetration and structural sensitivity of X-ray diffraction with objective-lens-based magnification, sensitive high-resolution X-ray imaging detectors, and pump-probe and real-time imaging strategies. Advances in full-field X-ray diffraction microscopy, often termed dark-field X-ray microscopy (DFXM), enable simultaneous imaging of extended fields of view while retaining crystallographic selectivity. Time-resolved DFXM promises to enable advances in materials processing and dynamics, electrochemical and photochemical processes, and the design of electronic devices. This Perspective summarizes the key instrumental concepts that define the performance of these methods, including the choice of imaging optics, detector considerations, and the impact of source time structure at synchrotron light sources and X-ray free-electron lasers (XFELs). We discuss the simultaneous use of complementary imaging modes that are increasingly used in practice. The early demonstrations of the potential of time-resolved DFXM include real-time defect and grain-boundary dynamics during metal annealing, stroboscopic imaging of functional devices with high strain sensitivity, and ultrafast pump-probe implementations at XFELs that directly visualize acoustic-wave propagation and energy dissipation in bulk crystals.

Dark-field X-ray microscopy↗

DOE OSTI2023

Photovoltaic device innovation for a solar future

Photovoltaics (PV), also known as solar cells, are now found everywhere - in utility plants; on roofs of homes and commercial buildings; on platforms at sea; in agricultural fields; on vehicles, buildings, drones, and backpacks; and, in their longest running application, providing power in space. Continuous device innovation has led to increased efficiency and improved reliability for multiple PV technologies. Confronted with an urgent need to deploy PV at multiterawatt (TW) scale over the next two decades to mitigate greenhouse gas emissions, PV device innovation takes on new urgency and impact. This perspective reviews recent progress in device design and performance for PV technologies that are currently in commercial production at greater than 1 GW/year or enabling significant space-based power generation - Si, CdTe, CIGS, and multijunction III-V - and looks ahead to the next 5 years. In conclusion, we also identify device-related topics requiring cross-cutting research and innovation.

14 SOLAR ENERGY↗

DOE OSTI2022

Exploring the benefits of utilizing small modular device for sustainable and flexible shale gas water management

Growing shale gas extraction in recent years has triggered wide discussions on the associated freshwater requirement and wastewater management. Many optimization approaches have been developed for shale gas water management; however, most of the studies assumed permanent utilization of wastewater treatment facilities with fixed capacities. Considering the rapidly declining characteristics of shale gas wastewater production, these treatment facilities could remain largely underutilized after the first few months/years of production, making them less economically attractive. To maximize the capacity utilization of treatment facilities and further improve the economic performance of shale gas development, this study develops a systematic optimization framework, where the capacity strategy of conventional treatment facilities and utilization of the recent concept of modular manufacturing are both considered for flexible shale gas water management. The proposed mixed-integer linear programming (MILP) model simultaneously optimizes the design and planning of integrated shale gas and water supply chain, with a focus on capacity planning for both large-scale conventional treatment facilities and small-scale modular devices. A series of Marcellus-based case studies are performed to illustrate the applicability of the proposed model and provide general insights into the trade-offs between the multiple types of treatment facilities. The optimization results reveal that the combinatorial utilization of conventional facilities and modular devices for wastewater treatment (66% by conventional facilities and 34% by modular devices) brings 9.3% more reused water for other well development and 6.2% savings in water-related costs, compared to flexible management of only conventional facilities. Furthermore, this work suggests that taking modular device as auxiliary equipment for shale gas water management is most beneficial to increase the capacity utilization of treatment facilities and achieve a more economic and sustainable shale gas production system.

04 OIL SHALES AND TAR SANDS↗

DOE OSTI2025

Forced flow transient safety analysis of irradiation device with adjustable orifice for research reactor fuel assemblies

The Belgium Reactor 2 (BR2) of the Belgian Nuclear Research Centre (SCK CEN) has several irradiation devices or rigs that are dedicated to the fuel performance and qualification demonstration testing of research reactor fuels. In support of the U.S. High Performance Research Reactor (USHPRR) LEU conversion project, a new flexible irradiation apparatus, MUSTANG-R, has been constructed. SCK CEN has completed the design and safety study, in cooperation with Idaho National Laboratory (INL) and Argonne National Laboratory (ANL), to allow for the irradiation testing of a full-size fuel assembly in a 200 mm diameter channel in the BR2 reactor. The moveable valve is a key design feature of the device and acts like an adjustable orifice enhancing or restricting the flow through a coolant channel inlet located in the BR2 upper plenum. This moveable valve allows the flow through the device to be adjusted prior to each BR2 cycle to obtain the necessary conditions for the fuel qualification test. This ensures accurate and representative thermal-hydraulic conditions of the fuel design are achieved. The device was designed and qualified as passively safe, implying verification by a combination of mechanical and thermal-hydraulic analysis and testing. This includes characterization of the safety margin required for a scenario where the moveable valve is assumed to be erroneously closed during irradiation. A simplified and conservative method is proposed for analyzing the corresponding forced flow transient using a critical heat flux criterion. In conclusion, this allows the required minimum valve opening to be determined for the experiments' design and safety studies.

11 - NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

DOE OSTI2024

Gamma, electron beam and X-ray irradiation effects on polymers in an advanced bone cement mixer device

The medical device industry has been investigating ways to increase the use of alternatives to cobalt-60 gamma radiation and ethylene-oxide gas sterilization, such as electron beam (E-beam) and X-ray radiation, due to regulatory and market pressures. One impediment to switching to E-beam or X-ray technology for sterilization is the lack of data on the effects of these radiation sources on medical device polymers. To provide such data this work considers irradiation and testing of a common single-use medical bone cement mixing system, the Stryker Advanced Cement Mixer (ACM®), that is composed of seven polymer materials. The ACM® devices considered here were processed to sterilization-relevant doses (15, 25, 50, and 70 kGy) using three radiation technologies: gamma, E-beam, and X-ray. The system and its polymer components were tested for product functionality, as well as mechanical and visual properties to determine how exposure effects may be influenced by radiation technology and dose level. We found that although there were instances of statistically significant differences in effects between the gamma-irradiated products and those irradiated with E-beam and X-ray, those effects were negligible in terms of retained functionality of the product and retained mechanical properties of the polymer components. Overall, results of this study demonstrate that, for of the effects studied, E-beam and X-ray are viable alternatives to cobalt-60 gamma radiation for sterilization of the polymer-based device investigated.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

DOE OSTI2020

The global energy footprint of information and communication technology electronics in connected Internet-of-Things devices

Information and communication technology (ICT) has been critical to the emergence of a new Internet-of-Things (IoT) era, as a rapidly increasing number and variety of IoT electronic devices in a wide range of end-use sectors require massive data communication in terms of volume, velocity/speed, and variety. Additionally, semiconductor technology advancements have played a key role in ICT and unlike the past ICT energy footprint analysis, which focused on the final electronic product, an attempt has been made to examine the global energy impacts for the period 2016–2025 based on the market forecasts of three major IoT IC types, i.e., sensors and actuators, connectivity, and processor ICs distributed among four major IoT device components.Total global IoT semiconductor primary energy demand is projected to increase from 2 EJ in 2016 to 35 EJ by 2025, resulting mainly from a substantial projected increase energy needed in the manufacturing of ICs, with growth in the use of sensors and energy-intensive next fab generation manufacturing. Unlike the trend in manufacturing energy, total global operational energy use is projected to decrease significantly with the development of smaller transistor size, low-power devices, and faster wireless data communication technology. Total operational energy is projected to significantly decrease from 118 TWh/year (1,2 EJ/year) to less than 1 TWh/year (0.003 EJ/year) in spite of a significantly higher anticipated growth in its market size during the 2016–2025 forecast period. Its annual share of total primary energy use is projected to reach an insignificant level of 0.01% by the end of 2025, consistent with the past limited electronic product life cycle analyses besides the analysis focus here limited to ICs in IoT devices.

24 POWER TRANSMISSION AND DISTRIBUTION↗

DOE OSTI2020

Optimization of the electron transport layer in quantum dot light-emitting devices

Quantum dot light-emitting devices have emerged as an important technology for display applications. Their emission is a result of recombination between positive and negative charge carriers that are transported through the hole and electron conductive layers, respectively. The selection of electron or hole transport materials in these devices not only demands the alignment of energy levels between the layers but also balances the flow of electrons and holes toward the recombination sites. In this work, we examine a method for device optimization through control of the charge carrier kinetics. We employ impedance spectroscopy to examine the mobility of charge carriers through each of the layers. The derived mobility values provide a path to estimate the transition time of each charge carrier toward the emitting layer. We suggest that an optimal device structure can be obtained when the transition times of both charge carriers toward the active layer are similar. Finally, we examine our hypothesis by focusing on thickness optimization of the electron transport layer.

36 MATERIALS SCIENCE↗

DOE OSTI2023

A perspective on the device physics of lead halide perovskite semiconducting detector for gamma and x-ray sensing

Metal-halide perovskites are emerging materials for radiation sensing featuring high absorption cross section, high charge mobility, and long carrier lifetime enabling superior detection efficiencies even at room temperature. Perovskite detector technologies are more complex involving different detecting modes and device architectures. Here, to elucidate the working principles, we provide a Perspective on the device structures and the operational principles of halide perovskite direct conversion detectors for radiation sensing. We will first discuss different detection modes and introduce the commonly used device architectures and their working principles. Based on our work and pioneer developments in the field, we will next compare the performances of the reported detectors. Additionally, we will summarize the single crystal detectors and polycrystalline thin film devices and discuss their advantages and disadvantages for different applications. Finally, we provide a future Perspective on the critical problems that must be addressed to commercialize this technology.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

DOE OSTI2025

Comprehensive model for evaluating voltage losses and performance improvements in thin-film photovoltaic devices

Progress of state-of-the-art and next-generation thin-film photovoltaic devices is often stymied by open-circuit voltage (𝑉 oc ) that is significantly lower than theoretical and practical limits. Yet, effectively diagnosing the primary sources of voltage loss remains challenging. Herein, a sequence of device-level characterization techniques and simulations are employed to identify and rank loss mechanisms. For the research-based Cd⁡(Se,Te) device under study, most of the loss was at the front semiconductor heterointerface due to a clifflike conduction-band offset that lowered the recombination activation energy. Additional losses due to band tails were quantified by photoluminescence analysis. The latter provided the absorption coefficient and activation energy reduction associated with band tails as inputs to device models. Simulations showed that alleviating front-interface issues would improve 𝑉 oc , but it would then be limited by bulk recombination. Further improvement of the bulk would then lead to back-contact limitations. Reducing band tails is beneficial in any circumstance. In conclusion, this analysis provides guidance for reaching toward the radiative 𝑉 oc limit.

14 SOLAR ENERGY↗

DOE OSTI2021

Experimental realization of classical Z 2 spin liquids in a programmable quantum device

We build and probe a Z 2 spin liquid in a programmable quantum device, the D-Wave DW-2000Q. Specifically, we observe the classical eight-vertex and six-vertex (spin ice) states and transitions between them. To realize this state of matter, we design a Hamiltonian with combinatorial gauge symmetry using only pairwise-qubit interactions and a transverse field, i.e., interactions which are accessible in this quantum device. The combinatorial gauge symmetry remains exact along the full quantum annealing path, landing the system onto the classical eight-vertex model at the endpoint of the path. The output configurations from the device allow us to directly observe the loop structure of the classical model. Moreover, we deform the Hamiltonian so as to vary the weights of the eight vertices and show that we can selectively attain the classical six-vertex (ice) model, or drive the system into a ferromagnetic state. Additionally, we present studies of the classical phase diagram of the system as a function of the eight-vertex deformations and effective temperature, which we control by varying the relative strengths of the programmable couplings, and we show that the experimental results are consistent with theoretical analysis. Finally, we identify additional capabilities that, if added to these devices, would allow us to realize Z 2 quantum spin liquids on which to build topological qubits.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2021

Performance Evaluation and Loss Modeling of WBG Devices based on a Novel Double-Pulse Test Method for Current Source Inverter

Careful measurements of the power device characteristics are necessary to accurately estimate a power converter's losses and efficiency. The conventional double-pulse test (DPT) circuit is a well-known method to implement this laboratory characterization of power devices and power modules. However, the switching characteristics of a power device depend on the power electronics circuit in which it is connected as well as the power circuit's physical layout, in addition to the device's internal structure. Hence, the conventional DPT circuit configuration, which is tailored for a standard voltage-source inverter (VSI), is not well-suited for a current-source inverter (CSI). This paper demonstrates a previously-proposed CSI-based DPT measurement technique that is appropriate for normal CSI operation. The characteristics of SiC MOSFETs and series-connected SiC Schottky diodes used in a CSI are measured using this improved technique while taking temperature effects into account to yield more accurate loss predictions. The CSI losses, including the switching and conduction losses of SiC MOSFETs and SiC Schottky diodes, have been modeled using this approach. The total CSI losses and efficiency have been estimated based on the CSI DPT results and loss models.

42 ENGINEERING↗