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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 469 records · Page 26
All sourcesNASA NTRSDOE OSTI
NASA NTRS2014

The MillSOT-A Spiral Orbit Tribometer on a Milling Machine

A spiral orbit tribometer (SOT) intended to characterize friction and wear phenomena has been constructed on a milling machine. The instrument, essentially a retainerless thrust bearing with one ball and flat races, is exceedingly simple and inexpensive to construct. The capabilities of the tribometer to measure both the coefficient of friction and contact electrical resistance are demonstrated with clean specimens as well as with well known lubricants such as molybdenum disulphide and Krytox oil. Operation in a purged environment of inert gas is also demonstrated. The results with these lubricants are quite close to what is obtained by other methods. Suggestions for extending the capabilities of the tribometer are given. This arrangement may find use in university mechanical engineering laboratories to introduce and study rolling contact motion as well as for research in contact mechanics and tribology.

Pepper, Stephen V.↗
DOE OSTI2022

Effect of oxide layer growth conditions on radiation detection performance of Ni/SiO 2 /epi-4H-SiC MOS capacitors

We report high resolution radiation detection has been demonstrated using Ni/SiO2/n-4H-SiC metal-oxidesemiconductor vertical capacitors fabricated using highly crystalline 4H-SiC epilayers. The oxide layers have been grown thermally using two different approaches: i) in-air, and ii) oxygen-ambience oxidation. The devices fabricated using the former method exhibited dark currents one order of magnitude higher than that in the latter. The observed difference has been attributed to the back-contact series resistance and capacitance. Regardless of the difference in the device parameters, detectors prepared using both of the methods exhibited very high energy resolutions of ≤ 0.5% for 5486 keV alpha particles emitted by an 241Am radioisotope. Capacitance mode deep level transient spectroscopic (DLTS) studies revealed similar type of electrically active defects along with Z1/2 and EH5 deep level defects in both the types of devices. The DLTS scans also revealed positive polarity peaks in these devices which indicate emission from minority carrier trap centers. The activation energy corresponding to the peak was found to be ~1.2 eV which has been assigned to HK3 defects responsible for hole trapping in 4H-SiC. The possibility of appearance of the positive peak due to non-negligible impedance of the back-contact has been ruled out based on the observation that the centroid of the observed peak did not change with detectors having different device parameters.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Indirect Liftoff Mechanism for High‐Throughput, Single‐Source Laser Scribing for Perovskite Solar Modules

A high‐throughput, single‐source laser scribing method exploiting a transparent conducting oxide (TCO) indirect liftoff mechanism is developed to produce serially interconnected perovskite solar modules. The TCO‐based indirect liftoff mechanism relies solely on laser absorption in the front transparent electrode material reducing thermal damage to the overlying layers and allowing for fast scribing speeds with low‐cost μs‐pulse duration fiber laser systems. Minimal resistive power losses are observed with the method compared to conventional ablative laser scribes, maintaining the power conversion efficiencies of small‐area devices (≈0.2 cm 2 ) across significantly larger deposition areas (≈1 cm 2 ). Finally, demonstrating > 3 m s −1 processing speeds, TCO‐based liftoff provides the highest throughput laser scribing method for thin‐film photovoltaic devices produced on glass/TCO substrates, capable of processing large‐area perovskite solar modules at a manufacturing scale.

14 SOLAR ENERGY↗
DOE OSTI2023

Abstract for CRADA between NETL and the University of Massachusetts Lowell (AGMT-1275)

The demand for printed electronics over conventional electronics is growing each year due to their low costs, low material waste during manufacturing, and compatibility with flexible substrates. The development of inks for printed electronics is a challenge because each printing technology requires different viscosities and curing behaviors to create devices with controlled structures at the micron scale, or smaller. Carbon is a great candidate for fabricating printed electronics devices because it is inexpensive and earth abundant, easily functionalized to impart miscibility with solvent systems, and has electrical properties that can be tuned from insulating to conducting. Despite these advantages, carbons are rarely used for printed electronics because there is a scarcity of inks available for non-contact printing technologies. To address these challenges, the National Energy Technology Laboratory (NETL) will collaborate with the University of Massachusetts Lowell (Participant) through its Printed Electronics Research Collaborative (PERC) to develop engineered carbons and ink formulations optimized specifically for printing radio- and microwave-frequency electronic devices using ink jet, aerosol jet, syringe dispensing, and other additive manufacturing techniques. NETL will process coal, petroleum, and other carbon feedstocks to make engineered carbons with the appropriate composition, microstructure, surface functionalization, and particle morphologies needed to stabilize ink suspensions and impart useful electronic properties to printed devices. The University of Massachusetts Lowell will utilize these engineered carbons to determine which solvent systems and ink additives are needed to achieve the appropriate viscosity, stability, and printability to make useful ink formulations. The University of Massachusetts Lowell will then utilize these inks to manufacture printed resistors and conductors using inkjet, aerosol jet, and syringe dispensing printing methods and will characterize device performance using four-point probe resistivity measurements, contact angle measurements to assess wettability, adhesion evaluation to various substrates, and focused ion beam and scanning electron microscopy for surface and density investigations of printed devices.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Dependence of Linker Length and Composition on Ionic Conductivity and Lithium Deposition in Single-Ion Conducting Network Polymers

In this report, single-ion conducting electrolytes stand as promising alternatives to state-of-the-Art electrolytes in lithium batteries, although a single-ion conducting material with high Li + conductivity, stability in contact with lithium, and suitable mechanical properties has been slow to emerge. Here, we describe the synthesis of a series of single-ion conducting network polymers from the reaction of tetrakis(4-(chloromethyl)-2,3,5,6-Tetrafluorophenyl)borate with oligoethylene glycoxide linkers Li 2 O[(CH 2 CH 2 )O] n (n = 1, 2, 3, 9, and 22). Polymers with the longest linkers (n = 9 and 22; ANP-9 and ANP-10, respectively) form materials with conductivities of ~ 10 -6 S cm -1 at 100 °C. With the addition of 65 wt % propylene carbonate (PC), all the network polymers in the series exhibit high conductivities at ambient temperatures, with the n = 1 material (ANP-6) achieving a bulk ionic conductivity of 2.5 x 10 -4 S cm -1 at 25 °C. More conductive single-ion conducting gels could be prepared by using the less coordinating pentanediol dilithium salt as a linker (ANP-11; σ = 3.5 x 10 -4 S cm -1 at 25 °C), although this material exhibited a surprisingly high interfacial resistance in contact with a lithium electrode. In contrast, the gel formed with ANP-6 is notably stable in contact with metallic lithium electrodes, displays a lithium-ion transference number of unity, and boasts a wide electrochemical stability window of greater than 4.5 V. Temperature-dependent ac impedance analysis reveals that the ionic conductivity of this material-and likely the other gels in the series-matches closely to a Vogel-Tamman-Fulcher temperature model.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS2005

Crane-Load Contact Sensor

An electronic instrument has been developed as a prototype of a portable crane-load contact sensor. Such a sensor could be helpful in an application in which the load rests on a base in a horizontal position determined by vertical alignment pins (see Figure 1). If the crane is not positioned to lift the load precisely vertically, then the load can be expected to swing once it has been lifted clear of the pins. If the load is especially heavy, large, and/or fragile, it could hurt workers and/or damage itself and nearby objects. By indicating whether the load remains in contact with the pins when it has been lifted a fraction of the length of the pins, the crane-load contact sensor helps the crane operator determine whether it is safe to lift the load clear of the pins: If there is contact, then the load is resting against the sides of the pins and, hence, it may not be safe to lift; if contact is occasionally broken, then the load is probably not resting against the pins, so it should be safe to lift. It is assumed that the load and base, or at least the pins and the surfaces of the alignment holes in the load, are electrically conductive, so the instrument can use electrical contact to indicate mechanical contact. However, DC resistance cannot be used as an indicator of contact for the following reasons: The load and the base are both electrically grounded through cables (the load is grounded through the lifting cable of the crane) to prevent discharge of static electricity. In other words, the DC resistance between the load and the pins is always low, as though they were always in direct contact. Therefore, instead of DC resistance, the instrument utilizes the AC electrical impedance between the pins and the load. The signal frequency used in the measurement is high enough (.1 MHz) that the impedance contributed by the cables and the electrical ground network of the building in which the crane and the base are situated is significantly greater than the contact impedance between the pins and the load. The instrument includes a signal generator and voltage-measuring circuitry, and is connected to the load and the base as shown in Figure 2. The output of the signal generator (typically having amplitude of the order of a volt) is applied to the load via a 50-resistor, and the voltage between the load and the pins is measured. When the load and the pins are not in contact, the impedance between them is relatively high, causing the measured voltage to exceed a threshold value. When the load and the pins are in contact, the impedance between them falls to a much lower value, causing the voltage to fall below the threshold value. The voltage-measuring circuitry turns on a red light-emitting diode (LED) to indicate the lower-voltage/ contact condition. Whenever the contact has been broken and the non-contact/higher-voltage condition has lasted for more than 2 ms, the voltage-measuring circuitry indicates this condition by blinking a green LED.

Youngquist, Robert↗
DOE OSTI2021

Impact of high-dose gamma-ray irradiation on electrical characteristics of N-polar and Ga-polar GaN p–n diodes

We investigate the impact of high-dose gamma-ray irradiation on the electrical performance of Ga-polar and N-polar GaN-based p-n diodes grown by metalorganic chemical vapor deposition. We compare the current density-voltage (J-V), capacitance-voltage (C-V), and circular transfer length method (CTLM) characteristics of the p-n diodes fabricated on Ga-polar and N-polar orientations before and after irradiation. The relative turn-on voltage increases for the Ga-polar diodes with increasing irradiation dose, while it increases initially and then starts to decrease for the N-polar diodes. The p-contact total resistance increases for Ga-polar and decreases for N-polar samples, which we attribute to the formation of point defects and additional Mg activation after irradiation. The J-V characteristics of most of the tested diodes recovered over time, suggesting the changes in the J-V characteristics are temporary and potentially due to metastable occupancy of traps after irradiation. X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) measurements reveal the existence of different types of initial defects and surface electronic states on Ga-polar and N-polar samples. Gallium vacancies (V Ga ) are dominant defects in Ga-polar samples, while nitrogen vacancies (V N ) are dominant in N-polar samples. The presence of a higher concentration of surface states on Ga-polar surfaces compared to N-polar was confirmed by calculating the band bending and the corresponding screening effect due to opposite polarization bound charge and ionized acceptors at the surface. The difference in surface stoichiometry in these two orientations is responsible for the different behavior in electrical characteristics after gamma-ray interactions.

36 MATERIALS SCIENCE↗
DOE OSTI2025

An Optothermal Raman Model Accounting for Convection, Radiation, and Substrate Effects for Evaluation of the Thermal Conductivity of Two‐Dimensional Coatings

Thermal conductivity of two‐dimensional (2D) materials is important to characterize as this will govern thermal transport physics in the various thermal and energy applications benefitting from the unique properties of these materials. Here, analytical and numerical techniques are presented to determine the thermal conductivity and interfacial conductance of a 2D material coating using confocal micro‐Raman spectroscopy as a noncontact diagnostic. While several methods have been proposed for calculating the values of thermal conductivity, interfacial conductance, and spatial temperature profile, these models often do not consider effects of radiation, convection, and substrate resistance on the temperature and heat flux profiles. We present a model to calculate the thermal conductivity and interfacial conductance which accounts for convection, radiation, and substrate effects to characterize a variety of 2D material coatings, which is demonstrated using large area graphene transferred onto copper and nickel substrates. Convection and radiation effects are found to have a negligible effect on the temperature profile of supported coatings, while the substrate effects have a considerable effect and therefore impact the quantification of thermal conductivity and interfacial conductance in addition to limiting the spatial resolution of the technique. These findings will allow for more accurate and reproducible extraction of the thermal conductivity of graphene and other 2D material coatings when employing noncontact optothermal Raman spectroscopy methods.

2D coatings↗
DOE OSTI2021

Low-Temperature 2D/2D Ohmic Contacts in WSe 2 Field-Effect Transistors as a Platform for the 2D Metal–Insulator Transition

in this work, we report the fabrication of hexagonal-boron-nitride (hBN) encapsulated multiterminal WSe 2 Hall bars with 2D/2D low-temperature Ohmic contacts as a platform for investigating the two-dimensional (2D) metal-insulator transition. We demonstrate that the WSe 2 devices exhibit Ohmic behavior down to 0.25 K and at low enough excitation voltages to avoid current-heating effects. Additionally, the high-quality hBN-encapsulated WSe 2 devices in ideal Hall-bar geometry enable us to accurately determine the carrier density. Measurements of the temperature (T) and density (n s ) dependence of the conductivity σ(T, n s ) demonstrate scaling behavior consistent with a metalinsulator quantum phase transition driven by electron-electron interactions, but where disorder-induced local magnetic moments are also present. Our findings pave the way for further studies of the fundamental quantum mechanical properties of 2D transition metal dichalcogenides using the same contact engineering.

2D materials↗
DOE OSTI2023

Thermal Analysis of Liquid and Air Cooling of High-Power-Density Integrated Motor Drives

Thermal management is a crucial aspect in the design of motor and drive systems. This paper introduces a coordinated cooling approach utilizing both liquid and air to enhance the integrated motor drive's power density. The proposed solution incorporates a shared water jacket to cool both the machine and power electronics, combined with forced air ventilation for the end windings and rotor. This approach is structurally simpler, less expensive, and more effective than conventional non-interacting cooling schemes. The paper addresses the modeling of key thermal features and nonlinearities including material anisotropy, contact thermal resistance, and uneven winding loss distributions. In addition, this study utilizes a more detailed model of the loss distribution among the winding turns in each slot that delivers a higher level of accuracy. Finite Element Analysis (FEA) results demonstrate the effectiveness of the integrated cooling system for efficiently cooling the designed integrated motor drive system.

42 ENGINEERING↗
DOE OSTI2025

OPET Hardware (Open PV Electrical Tool Hardware) [SWR-25-42]

OPET (Open-source Photovoltaic Electrical Tool) is used for performance measurements of solar photovoltaic (PV) devices in the field under natural sunlight or in the lab under artificial light. Its primary use is in research and development of solar cells and modules, specifically in reliability and durability research of PV devices. Some features and functions include: -IV curve measurements with linear or cosine distributed measurement points -PV device active loading at open circuit voltage (Voc), short circuit current (Isc) and maximum power point (Pmp) -Bias power supply to overcome series resistance in contact wires for Isc measurements and loading -PV voltage input in five ranges from 1V to 100V -PV current input ranges -Low current version, six current ranges from 1.1mA to 340mA -High current version, six current ranges from 50mA to 15A -IO ports for I2C and SPI temperature sensor Arduino extension boards -Integrated fan control This repository contains everything relating to the hardware of the OPET device. If you are looking for the firmware or software repositories, links are below: https://github.com/NREL/opet-firmware https://github.com/NREL/opet-control

McDanold, Byron [National Renewable Energy Laborat↗
DOE OSTI2025

Characterization of Performance Degradation Mechanisms in Low-Cost High Throughput DI-O3 Layer for Passivated Contact Silicon Solar Cells

Characterization and mitigating performance limiting defects in Silicon (Si) PV is one of key areas to be addressed to improve PV hardware costs and energy yield in order to lower the levelized cost of energy (LCOE) of installed PV cost to $0.02/kWh. As Si PV cells efficiencies have surpassed 22% and approaching 23%, the recombination at the metal contacts have become the focus point to be addressed. Passivated contact technologies—having a heterojunction with a band-gap larger than silicon between the metal and silicon—have emerged as a great potential for future highand ultrahigh-efficiency solar cells, as it concurrently reduces recombination and increases carrier selectivity, by incorporating thin films within the contact structure. Passivated contact Si solar cell technologies use a wide variety of tunnel layers—playing a crucial role to passivate metal contacts and tunnel charge carriers—including stoichiometric silicon oxide (SiO 2 ) grown by thermal oxidation and Low-Pressure Chemical Vapor Deposition (LPCVD) technique and silicon oxide (SiO x ) by hot nitric acid. However, thorough investigations on understanding the failure and performance degradation mechanisms associated with tunnel layers are still limited to date. Unlocking those degradation characteristics in crucial tunnel layers could improve the reliability and energy yield of passivated contact Si solar cells. Besides, the technique of growing aforementioned tunneling layers are low throughput, and requires high temperature processes and/or a vacuum environment. In this project, we investigated the performance degradation mechanisms of a low-cost high-throughput ozonated oxide (DI-O 3 ) tunnel layer for the passivated contact Si solar cells.

14 SOLAR ENERGY↗
DOE OSTI2026

High-Torque Heavy-Rare-Earth-Free Electric Motor Thermal Management

This project is part of a multi-lab Next-Generation Reliable Electric Drive Systems for Medium and Heavy-Duty Vehicles (NEXT-DRIVE) project led by Oak Ridge National Laboratory (ORNL), and including NREL, Sandia National Laboratories (SNL), and Ames Laboratory that leverages research expertise and facilities of these national labs to develop tools and approaches for reducing the design and development time of new electric drive technologies for medium and heavy-duty vehicles (MHDVs) and their associated costs while increasing reliability and asset utilization. The Next-Drive project aligns with the DOE's goals by introducing high-fidelity multi-physics and AI/ML-based modeling to design low-cost, highly reliable, and longer-lifetime drivetrains, aiming to achieve 25 years of progress in 5 years. The efforts of this project will focus on NEXT-DRIVE Task 4 (led by ORNL, NREL, and AMES) - developing high-fidelity modeling framework and identifying technologies enabling heavy-rare-earth-free electric motors for medium- and heavy-duty vehicles to achieve 1 million miles of operation. Contrary to conventional approaches that optimize the motor for power density, the focus will be to identify motor designs that achieve the best trade-off between motor power density and durable operation. NREL tasks include development of high-fidelity motor thermal models incorporating rotor windage losses and identification, evaluation and measurement of motor interface materials in key thermal pathways. The poster summarizes NREL's accomplishments for the first half of FY 2025 and outlines future plans.

33 ADVANCED PROPULSION SYSTEMS↗