DOE OSTI2014
Graphical abstract: Core–shell structure can be obtained in BaTiO{sub 3} ceramics co-doped with Y–Mg-Ga-Si. Y-Mg-Ga-Si co-dopant can obviously reduce dielectric loss, improve AC breakdown voltage and flatten temperature dependence of capacitance curve. - Highlights: • Y-Mg-Ga-Si co-doped BaTiO{sub 3} ceramics with core-shell structure were prepared. • Y{sup 3+}, Mg{sup 2+}, and Ga{sup 3+} dissolved in the lattice BaTiO{sub 3} replacing Ba{sup 2+} site or Ti{sup 4+} site. • Y{sup 3+} and Ga{sup 3+} tended to remain close to the grain boundaries as a shell maker. • Y-Mg-Ga-Si co-doped BaTiO{sub 3} ceramics show high AC breakdown voltage and low tanδ. - Abstract: The microstructures and dielectric properties of Y-Mg-Ga-Si co-doped barium titanate ceramics were investigated. Y{sup 3+} dissolved in the lattice of BaTiO{sub 3} replacing both Ba{sup 2+} site and Ti{sup 4+} site, and Mg{sup 2+} replaced Ti{sup 4+} site. The replacements of Y{sup 3+} and Mg{sup 2+} inhibit the grain growth, cause tetragonal-to-pseudocubic phase transition, reduce the dielectric loss, and flatten the temperature dependence of capacitance curve. The incorporation of Ga{sup 3+} can improve sintering and increase permittivity. Y{sup 3+} and Ga{sup 3+} tended to remain close to the grain boundaries, and play an important role as a shell maker in the formation of the core–shell structure in the co-doped BaTiO{sub 3} ceramics. Excellent dielectric properties: ϵ{sub r} = ∼2487, tanδ = ∼0.7% (at 1 kHz), ΔC/C{sub 25} < ∼6.56% (from −55 °C to 125 °C) and alternating current breakdown voltage E < ∼4.02 kV/mm can be achieved in the BaTiO{sub 3}–0.02Y{sub 2}O{sub 3}–0.03MgO–0.01Ga{sub 2}O{sub 3}–0.005SiO{sub 2} ceramics sintered at 1380 °C. This material has a potential application in alternating current multilayer ceramic capacitor.