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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 451 records · Page 25
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Catalyst Layer Resistance and Utilization in PEM Electrolysis

Improving utilization, performance, and stability of low iridium (Ir)-loaded anodes is a key goal to enable widespread adoption of polymer electrolyte membrane water electrolysis (PEMWE) for clean hydrogen production. A potential limitation is high ionic or electronic resistance of the anode catalyst layer, which leads to poor catalyst utilization, increased voltage losses, and high local overpotentials that can accelerate degradation. While catalyst layer resistance is relatively well-understood in fuel cells and other porous electrode systems, characterization of these effects is not as well established in PEMWE research. Here we present in-situ methods for measuring catalyst layer resistance in electrolysis cells using a non-faradaic H 2 /H 2 O condition as well as methods for calculating the associated voltage losses. These methods are applied to anode catalyst layers based on IrO 2 nanoparticles as well as dispersed nano-structured thin film (NSTF) Ir catalysts. Trends with anode catalyst loading and interactions between the porous transport layer and catalyst layer are investigated for IrO 2 anodes. Post-mortem microscopic analysis of durability-tested anodes is also presented, showing uneven degradation of the catalyst layer caused by catalyst layer resistance.

08 HYDROGEN↗
DOE OSTI2021

Grid-Connected Self-Synchronous Cascaded H-Bridge Inverters with Autonomous Power Sharing: Preprint

Cascaded inverters are widely applied in applications where elevated ac voltages are required while using semiconductor devices with lower voltage ratings. Here, we focus on structures that require localized power transfer between low-voltage sources/loads dispersed across inverter dc links and the inverter ac-sides are series-connected across a three-phase medium-voltage ac grid. To date, decentralized controllers that allow for bi-directional power transfer in such systems are limited. To fill this gap, we propose a virtual oscillator controller which modulates the power processed by each inverter in a purely decentralized manner.

autonomous power sharing↗
DOE OSTI2024

Impact of Electrolyte Additives on the Lifetime of High Voltage NMC Lithium-Ion Pouch Cells

This work involves improving the lifetime of lithium-ion cells during high voltage cycling using electrolyte additives. Three generations of electrolyte additives were investigated and screened in NMC442/graphite pouch cells using a 24 h voltage-hold protocol at 40 degrees C to accelerate oxidative reactions occurring at 4.4 V. Once promising additives and combinations were identified, they were then tested in cobalt-free NMC640/graphite cells for long-term cycling to upper cutoff voltages of 4.3, 4.4, and 4.5 V at temperatures of 20, 40, and 55 degrees C. Degradation mechanisms were probed using dV/dQ analysis, micro-X-ray fluorescence spectroscopy, and electrochemical impedance spectroscopy. The primary failure mode of cells held at high voltages is due to increase in cell impedance, which is correlated to the dissolution of transition metals, specifically manganese, originating from the positive electrode. We believe this dissolution is presumably due to the formation of a high impedance rock salt surface layer on the NMC positive electrode particles. Such deleterious outcomes can be limited by selecting an appropriate electrolyte additive package. It is hoped that this paper can provide a starting point for developing NMC Li-ion cells that can operate to voltages as high as 4.4 V and still display long lifetimes.

Azam, Saad↗
DOE OSTI2025

Enhancement-Mode GaN Monolithic Bidirectional Switch With Breakdown Voltage Over 3.3 kV

Here, this work demonstrates a GaN enhancement-mode monolithic bidirectional switch (MBDS) with breakdown voltage (BV) higher than 3.3 kV in both polarities. This MBDS is realized on a dual p-GaN gate high electron mobility transistor (HEMT) platform on sapphire substrate. It features a novel dual junction termination extension design for electric field management, which is built on the p-GaN layer in the gate stack and does not require epitaxial regrowth. The GaN MBDS exhibits symmetric on-state characteristics in both directions with a threshold voltage (V th ) of 0.6 V and a low specific on-resistance (R on,sp ) of 5.6 m Ω · cm2. This device presents the highest BV, as well as one of the best BV and R on,sp trade-offs, in all the reported MBDS devices. The R on,sp is lower than the performance limit of conventional BDS realized by two discrete devices. This 3.3 kV GaN MBDS opens the door for developing new circuit topologies and advancing system performance in medium-voltage power electronics.

42 ENGINEERING↗
DOE OSTI2021

Lyapunov stability of smart inverters using linearized distflow approximation

Fast-acting smart inverters that utilize preset operating conditions to determine real and reactive power injection/consumption can create voltage instabilities (over-voltage, voltage oscillations and more) in an electrical distribution network if set-points are not properly configured. In this work, linear distribution power flow equations and droop-based Volt–Var and Volt–Watt control curves are used to analytically derive a stability criterion using Lyapunov analysis that includes the network operating condition. The methodology is generally applicable for control curves that can be represented as Lipschitz functions. The derived Lipschitz constants account for smart inverter hardware limitations for reactive power generation. A local policy is derived from the stability criterion that allows inverters to adapt their control curves by monitoring only local voltage, thus avoiding centralized control or information sharing with other inverters. The criterion is independent of the internal time-delays of smart inverters. Simulation results for inverters with and without the proposed stabilization technique demonstrate how smart inverters can mitigate voltage oscillations locally and mitigate real and reactive power flow disturbances at the substation under multiple scenarios. The study concludes with illustrations of how the control policy can dampen oscillations caused by solar intermittency and cyberattacks.

42 ENGINEERING↗
DOE OSTI2020

Evolution of the Rate-Limiting step: From Thin Film to Thick Ni-rich Cathodes

Ni-rich NMC (LiNixMnyCo1-x-yO2, x = 0.6) has the attributes of high specific capacity (greater than 180 mAh g-1), high operating voltage (ca. 3.8 V) and low cost, which is therefore deemed as one of the most promising cathode candidates for next-generation high-energy Li-ion batteries (LIBs). However, challenges exist before the large-scale commercialization of Ni-rich cathode such as gas generation, capacity degradation especially at high rate or elevated temperatures. From thin film to densely pack high loading cathode, this work investigates the rate-limiting steps in Ni-rich cathodes e.g., phase structure, electronic and ionic conductivity to understand the reaction kinetics at different scales. This work provides new insights in understanding the electrochemical properties of Ni-rich cathode at different levels to inspire revolutionary ideas to address the fundamental issues of Ni-rich cathode from materials to relevant electrode levels.

Hu, Jiangtao↗
DOE OSTI2020

Role of inner solvation sheath within salt–solvent complexes in tailoring electrode/electrolyte interphases for lithium metal batteries

Functional electrolyte is the key to stabilizing the highly reductive lithium (Li) metal anode (LMA) and high voltage cathode for long life, high energy-density rechargeable Li metal batteries (LMBs). However, fundamental knowledge of the interaction principles between reactive electrodes and electrolytes is still limited. Recently localized high-concentration electrolytes (LHCEs) are emerging as promising electrolyte design strategies for LMBs. They can also serve as an ideal platform for understanding the reactivity characteristics of the inner solvation sheath on electrode surfaces due to their unique solvation structures. Here, we study the effects of a series of LHCEs with model electrolyte solvents (carbonate, sulfone, phosphate and ether) in high voltage LMBs. Varied electrode stabilities exhibited in different LHCEs indicate the intricate synergies between the salt and the solvent on electrode surfaces. Experimental and theoretical analyses reveal an intriguing general rule that the strong interactions between the salt and the solvent in the inner solvation sheath promote their intermolecular proton/charge transfer reactions, which dictates the properties of the electrode/electrolyte interphases and thus the battery performances.

Solvation sheath, salt-solvent complex, electrode/↗
DOE OSTI2022

Active Region Extent Assessment with X-rays (AREA-X)

The development of semiconductor sensors for new particle tracking detectors places increasing limits on sensor characteristics such as uniformity, size and shape of inefficient areas and size of active compared to inactive sensor areas. Accurately assessing these relatively subtle effects requires either measurements in particle beams or the modification of samples to be used in dedicated laser test setups. Active Region Extent Assessment with X-rays (AREA-X) has been developed as an alternative method for the fast, efficient and precise study of the active area of a semiconductor sensor. It uses a monochromatic, micro-focused X-ray beam with a 10–20 keV energy range as provided by several synchrotron beam lines and uses the photo current induced in the sensor to measure the depth of the responsive sensor volume. It can be used to study local inhomogeneities or inefficiencies, the overall extent of the active sensor volume and its shape and its localised application, which makes the need to gather statistics over a large area unnecessary, allowing for fast readout, which enables studies of the sensor behaviour at a range of external parameters, e.g. temperature or applied bias voltage. This paper presents the measurement concept and technical setup of the measurement, results from initial measurements as well as capabilities and limitations of the method.

47 OTHER INSTRUMENTATION↗
DOE OSTI2021

Galvanostatic Intermittent Titration Technique Reinvented: Part II. Experiments

Following a critical review of the galvanostatic intermittent titration technique in Part I, here we experimentally demonstrate how to extract chemical diffusivity with a modified method. We prepare dense bulk samples that ensure diffusion-limitation. We utilize the scaling with $\sqrt{{t}_{\mathrm{relax}}+\tau }-\sqrt{{t}_{\mathrm{relax}}}$ (trelax: relaxation time; τ: pulse duration), avoiding problems with composition-dependent overpotentials. The equilibrium Nernst voltage is measured separately using small porous particles. This separation between the diffusion measurement and the titration procedure is critical for performing each measurement in a reliable setting. We report the chemical diffusion coefficients of LixNi1/3Mn1/3Co1/3O2 and their activation energy. We extract ionic conductivity and compare it with total conductivity to confirm ion-limitation in chemical diffusion. The measurements suggest that the time scale for diffusion in typical Li-ion battery particles could be much shorter than that of the intercalation/deintercalation processes at the particle surface (Biot number less than 0.1).

25 ENERGY STORAGE↗
DOE OSTI2022

Defect engineering in wide-bandgap perovskites for efficient perovskite–silicon tandem solar cells

Wide-bandgap (WBG) mixed-halide perovskites show promise of realizing efficient tandem solar cells but at present suffer from large open-circuit voltage loss and the mechanism is still unclear. Here we show that WBG perovskites with iodide–bromide compositions have an increased concentration of deep traps induced by iodide interstitials, which limits performance of WBG perovskite cells. We employ tribromide ions to suppress the iodide interstitial formation and thus reduce charge recombination in bladed WBG perovskite films of Cs 0.1 FA 0.2 MA 0.7 Pb(I 0.85 Br 0.15 )3. The 1-µm-thick opaque WBG perovskite solar cells have an efficiency of 21.9%, a small open-circuit voltage deficit of 0.40 V and a large fill factor of 83%. The efficiency of the best-performing monolithic perovskite–silicon tandem cell using this perovskite reaches 28.6%. Furthermore, the tribromide addition also suppresses light-induced phase segregation in WBG perovskites and thus enhance device stability. Encapsulated tandem cells maintain 93% of their initial efficiency after operation for 550 h.

14 SOLAR ENERGY↗
DOE OSTI2024

Space charge dominated momentum spread and compensation strategies in the post-linac section of Proton Improvement Plan-II at Fermilab

The upcoming Proton Improvement Plan-II (PIP-II), designated for enhancements to the Fermilab accelerator complex, features a new 800 MeV superconducting linac and a Beam Transfer Line (BTL) to transport the beam to the existing Booster synchrotron. To mitigate the space charge tune shift associated with a high intensity accumulated beam, the low emittance linac beam is used to paint the ring phase space both transversely and longitudinally. To prevent losses caused by particles injected outside the rf separatrix while painting longitudinal phase space, the momentum spread of the incoming beam should not exceed 2.1 x 10^-4. Detailed simulations showed that due to space charge, the rms momentum spread increases to 4 x 10^-4 while it is transported in the BTL --about twice the allowable limit. In this paper, we outline a mitigation strategy involving a debuncher cavity. We discuss location, operating frequency, and gap voltage under both nominal and perturbed beam conditions, specifically accounting for momentum jitter. The impact of cavity misalignments is also assessed. The paper concludes by recommending an optimized configuration.

43 PARTICLE ACCELERATORS↗
DOE OSTI2022

Advanced Power-Hardware-in-the-Loop Evaluation of Inverter-Based Resources (IBRs)

Power-hardware-in-the-loop evaluation of IBRs has become more and more important as it provides reliable testing results to investigate the real responses of inverters with interconnected systems. A successful laboratory PHIL testing gives confidence of the hardware system to be deployed and de-risk technology integration prior to field deployment. So far, there are two important applications for PHIL evaluation: (1) test stability and functionality of large utility inverters into the system when it interconnects to the distribution systems/microgrids; and (2) test the collective grid service that inverters can provide to the grid. For the first application, the PHIL evaluation has high requirements for the stability and accuracy of the PHIL interface as the close-loop in digital real time simulator (DRTS) should replicate the actual current and voltage dynamics in the inverter. This is challenging because of the delays, sensing errors, nonlinearities of inverters, and hardware bandwidth limitations of the elements in the HIL loop. For the second application, multiple inverters will be tested resulting in multiple PCCs, which naturally causes competing dynamics and oscillations among hardware inverters if traditional PHIL interface is used. Therefore, new PHIL interface should be developed to compromise between stability and accuracy and represent the dispatched grid services for the hardware inverters. In this presentation, we will share our latest work in developing PHIL interface in these two applications to address the two key challenges.

DERMS↗
DOE OSTI2026

Controlled lithium stripping enables a stable interface for long-cycling anode-free solid-state batteries

Anode-free solid-state batteries (AFSSBs) are a promising route toward achieving high energy density. In these cells, the anode contains no pre-stored lithium (Li). Instead, the entire Li inventory originates from the cathode and is freshly deposited onto a bare current collector during charging. However, achieving uniform and defect-free Li plating on this bare current collector remains a major challenge, often resulting in low Li plating/stripping efficiency and rapid capacity decay. Here, for the first time, operando neutron imaging is employed to visualize Li plating/stripping behavior in an anode-free full cell with LiNi0.82Mn0.07Co0.11O2 (NMC) as the cathode. Operando measurements reveal that complete stripping of Li leaves isolated Li residues on the current collector, which degrades the interfacial contact between the current collector and the solid-state electrolyte. To mitigate this interfacial issue and promote more uniform Li deposition, we implement a discharge-cutoff-voltage strategy that intentionally retains a thin residual Li layer after stripping. This preserved Li-containing interfacial reservoir not only improves interfacial contact but also serves as an in situ formed seed layer that enables more homogeneous subsequent Li plating. As a result, the optimized anode-free cell with limited stripping depth exhibits excellent long-term cycling stability, maintaining a discharge capacity of 112.1 mAh g−1 with a capacity retention of 80.6% and an average coulombic efficiency of approximately 99.9% after 500 cycles at 0.25 C. In contrast, the cell with a conventional discharge cutoff voltage of 2.8 V exhibits rapid capacity decay, retaining only 59.7 mAh g−1 after 50 cycles with a capacity retention of 40.7%. This work demonstrates that limiting deep stripping to preserve a thin Li-containing interfacial layer can effectively improve the cycling stability of sulfide-based AFSSBs.

Wang, Jiwei [Northeastern University, Boston]↗
DOE OSTI2024

Mitigating the Effects of Au-Al Intermetallic Compounds Due to High-Temperature Processing of Surface-Electrode Ion Traps

Stringent physical requirements need to be met for the high-performing surface-electrode ion traps used in quantum computing and timekeeping. In particular, these traps must survive a high-temperature environment for vacuum chamber preparation and support high RF voltage on closely spaced electrodes. Due to the use of gold wire bonds on aluminum pads, intermetallic growth can lead to wire bond failure via breakage or high resistance, limiting the lifetime of a trap assembly to a single multiday bake at 200 ° C. Using traditional thick metal stacks to prevent intermetallic growth, however, can result in trap failure due to RF breakdown events. Through high-temperature experiments, we conclude that an ideal metal stack for ion traps is Ti/Pt/Au (20/100/250 nm), which allows for a cumulative bakeable time of roughly 86 days without compromising the trap voltage performance. This increase in the bakeable lifetime of ion traps will remove the need to discard otherwise functional ion traps when vacuum hardware is upgraded, which will greatly benefit ion trap experiments.

Haltli, Raymond A.↗
DOE OSTI2021

Physical Properties of Candidate X-ray Detector Material Rb 4 Ag 2 BiBr 9

Recently, metal halide perovskites have emerged as promising semiconductor candidates for sensitive X-ray photon detection due to their suitable band gap energies, excellent charge transport properties, and low material cost afforded by their low-temperature solution-processing preparation. Furthermore, we report an improved methodology for single crystal growth and thermal and electrical properties of a two-dimensional (2D) layered halide material Rb 4 Ag 2 BiBr 9 , which has been identified as a potential candidate for X-ray radiation detection applications. The measured heat capacity for Rb 4 Ag 2 BiBr 9 implies that there are no structural phase transitions upon cooling. Temperature dependence of thermal transport measurements further suggests remarkably low thermal conductivities of Rb 4 Ag 2 BiBr 9 that are comparable to the lowest reported in literature. The bulk crystal resistivity is determined to be 2.59 × 10 9 Ω·cm from the current–voltage (I–V) curve. Density of trap states is estimated to be ~10 10 cm –3 using the space-charge-limited-current measurements. The fabricated Rb 4 Ag 2 BiBr 9 -based X-ray detector shows good operational stability with no apparent current drift, which may be ascribed to the 2D crystal structure of Rb 4 Ag 2 BiBr 9 . Finally, by varying the X-ray tube current to change the corresponding dose rate, the Rb4Ag2BiBr9 X-ray detector sensitivity is determined to be 222.03 μC Gy –1 cm –2 (at an electric field of E = 24 V/mm).

36 MATERIALS SCIENCE↗
DOE OSTI2026

From Filamentary Failure to Durable Halide Perovskite Memristors

Halide perovskites have emerged as promising materials for memristive devices. While their pronounced electrochemical reactivity and fast ionic mobility enable numerous advantages including low-voltage operation and fast switching, the same features also render perovskite-based memristors vulnerable to metallic shunts and poor endurance, limiting their practical applications. Here, we elucidate both the resistive switching and failure mechanisms in perovskite memristors with a fluorine-doped tin oxide (FTO)/methylammonium lead triiodide (MAPbI3)/Ag structure and demonstrate a strategy to substantially enhance device durability. As opposed to commonly invoked filamentary mechanisms, electrical, structural, and spectroscopic analyses reveal that resistive switching arises from interfacial barrier modulation by reversible Ag redox reactions that drive electrochemical doping/dedoping within the perovskite. Device failure, however, originates from metallic Ag0 filamentation that ultimately forms permanent conductive pathways. Introducing an ultrathin Al2O3 interlayer at the inert-electrode interface improves device endurance by more than 30-fold, exceeding 15,000 switching cycles, without compromising other performance metrics. Interfacial characterization indicates that the Al2O3 layer modifies wettability of Ag deposits, promoting planar island growth rather than through-film filamentation. These findings establish a clear link between interfacial electrochemistry, metal precipitation behavior, and memristor reliability, highlighting inert-electrode interfacial engineering as an effective pathway toward durable perovskite-based memristors.

14 SOLAR ENERGY↗
DOE OSTI2020

Determination of background doping polarity of unintentionally doped semiconductor layers

Here, we present a method of determining the background doping type in semiconductors using capacitance–voltage measurements on overetched double mesa p–i–n or n–i–p structures. Unlike Hall measurements, this method is not limited by the conductivity of the substrate. By measuring the capacitance of devices with varying top and bottom mesa sizes, we were able to conclusively determine which mesa contained the p–n junction, revealing the polarity of the intrinsic layer. This method, when demonstrated on GaSb p–i–n and n–i–p structures, concluded that the material is residually doped p-type, which is well established by other sources. The method was then applied to a 10 monolayer InAs/10 monolayer AlSb superlattice, for which the doping polarity was unknown, and indicated that this material is also p-type.

42 ENGINEERING↗