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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 451 records · Page 25
All sourcesNASA NTRSDOE OSTI
NASA NTRS2008

Modifications and Modelling of the Fission Surface Power Primary Test Circuit (FSP-PTC)

An actively pumped alkali metal flow circuit, designed and fabricated at the NASA Marshall Space Flight Center, underwent a range of tests at MSFC in early 2007. During this period, system transient responses and the performance of the liquid metal pump were evaluated. In May of 2007, the circuit was drained and cleaned to prepare for multiple modifications: the addition of larger upper and lower reservoirs, the installation of an annular linear induction pump (ALIP), and the inclusion of the Single Flow Cell Test Apparatus (SFCTA) in the test section. Performance of the ALIP, provided by Idaho National Laboratory (INL), will be evaluated when testing resumes. The SFCTA, which will be tested simultaneously, will provide data on alkali metal flow behavior through the simulated core channels and assist in the development of a second generation thermal simulator. Additionally, data from the first round of testing has been used to refine the working system model, developed using the Generalized Fluid System Simulation Program (GFSSP). This paper covers the modifications of the FSP-PTC and the updated GFSSP system model.

Garber, Ann E.↗
NASA NTRS2010

Low and High Frequency Models of Response Statistics of a Cylindrical Orthogrid Vehicle Panel to Acoustic Excitation

This presentation further develops the orthogrid vehicle panel work. Employed Hybrid Module capabilities to assess both low/mid frequency and high frequency models in the VA One simulation environment. The response estimates from three modeling approaches are compared to ground test measurements. Detailed Finite Element Model of the Test Article -Expect to capture both the global panel modes and the local pocket mode response, but at a considerable analysis expense (time & resources). A Composite Layered Construction equivalent global stiffness approximation using SEA -Expect to capture response of the global panel modes only. An SEA approximation using the Periodic Subsystem Formulation. A finite element model of a single periodic cell is used to derive the vibroacoustic properties of the entire periodic structure (modal density, radiation efficiency, etc. Expect to capture response at various locations on the panel (on the skin and on the ribs) with less analysis expense

Smith, Andrew↗
NASA NTRS2011

Experimental and Analytical Evaluation of a Composite Honeycomb Deployable Energy Absorber

In 2006, the NASA Subsonic Rotary Wing Aeronautics Program sponsored the experimental and analytical evaluation of an externally deployable composite honeycomb structure that is designed to attenuate impact energy during helicopter crashes. The concept, which is designated the Deployable Energy Absorber (DEA), utilizes an expandable Kevlar honeycomb structure to dissipate kinetic energy through crushing. The DEA incorporates a unique flexible hinge design that allows the honeycomb to be packaged and stowed flat until needed for deployment. A variety of deployment options such as linear, radial, and/or hybrid methods can be used. Experimental evaluation of the DEA utilized a building block approach that included material characterization testing of its constituent, Kevlar -129 fabric/epoxy, and flexural testing of single hexagonal cells. In addition, the energy attenuation capabilities of the DEA were demonstrated through multi-cell component dynamic crush tests, and vertical drop tests of a composite fuselage section, retrofitted with DEA blocks, onto concrete, water, and soft soil. During each stage of the DEA evaluation process, finite element models of the test articles were developed and simulations were performed using the explicit, nonlinear transient dynamic finite element code, LS-DYNA. This report documents the results of the experimental evaluation that was conducted to assess the energy absorption capabilities of the DEA.

Jackson, Karen E.↗
NASA NTRS2002

Integrated Bypass Battery for ReverseBias Protection

When a single solar cell of a series-connect string is placed in shadow, the entire array current is forced through that cell in reverse bias. Reverse bias current can lead to "hot-spot" heating, where the power produced by the unshadowed cells is dissipated as heat in the shadowed cell. Since occasional shadows are unavoidable in most applications, most solar arrays include shadow protection to prevent damage. In current practice, shadow protection is done with a "bypass diode" on each cell, to shunt the reverse bias current if a cell is shadowed. A new method of reverse bias protection is to use an Integral thin-film battery to provide voltage in the case of a shadowed cell. In this case, the shadowed cell continues to provide voltage during the transient shadow.

Landis, Geoffrey A,↗
NASA NTRS2012

Radiation Tests of Highly Scaled, High-Density, Commercial, Nonvolatile NAND Flash Memories - Update 2012

The space radiation environment poses a certain risk to all electronic components on Earth-orbiting and planetary mission spacecraft. In recent years, there has been increased interest in the use of high-density, commercial, nonvolatile flash memories in space because of ever-increasing data volumes and strict power requirements. They are used in a wide variety of spacecraft subsystems. At one end of the spectrum, flash memories are used to store small amounts of mission-critical data such as boot code or configuration files and, at the other end, they are used to construct multi-gigabyte data recorders that record mission science data. This report examines single-event effect (SEE) and total ionizing dose (TID) response in single-level cell (SLC) 32-Gb, multi-level cell (MLC) 64-Gb, and Triple-level (TLC) 64-Gb NAND flash memories manufactured by Micron Technology with feature size of 25 nm.

Irom, Farokh↗
NASA NTRS2012

Radiation tests of highly scaled, high-density, commercial, nonvolatile NAND flash memories— update 2012

The space radiation environment poses a certain risk to all electronic components on Earth-orbiting and planetary mission spacecraft. In recent years, there has been increased interest in the use of high-density, commercial, nonvolatile flash memories in space because of ever-increasing data volumes and strict power requirements. They are used in a wide variety of spacecraft subsystems. At one end of the spectrum, flash memories are used to store small amounts of mission-critical data such as boot code or configuration files and, at the other end, they are used to construct multi-gigabyte data recorders that record mission science data. This report examines single-event effect (SEE) and total ionizing dose (TID) response in single-level cell (SLC) 32-Gb, multi-level cell (MLC) 64-Gb, and Triple-level (TLC) 64-Gb NAND flash memories manufactured by Micron Technology with feature size of 25 nm.

Allen, Gregory R.↗
NASA NTRS1972

The prediction of millimeter wavelength precipitation attenuation using a cylindrical storm cell model

The single terminal and two terminal diversity precipitation attenuation distributions are calculated for a millimeter wavelength earth-satellite propagation path. The calculated probability distributions are compared to attenuation probability distributions measured at two locations with the ATS-5 millimeter wavelength experimental 15.63 GHz downlink. Using an empirically derived three mode exponential cell diameter-rain rate function, the calculated distributions agreed within -2 to +1 db of the measured distributions for both terminal locations. The sensitivity of the calculated distribution to variations of the cell model parameters was also investigated.

Zintsmaster, L. R.↗
NASA NTRS1986

Requirements for high-efficiency solar cells

Minimum recombination and low injection level are essential for high efficiency. Twenty percent AM1 efficiency requires a dark recombination current density of 2 x 10 to the minus 13th power A/sq cm and a recombination center density of less than 10 to the 10th power /cu cm. Recombination mechanisms at thirteen locations in a conventional single crystalline silicon cell design are reviewed. Three additional recombination locations are described at grain boundaries in polycrystalline cells. Material perfection and fabrication process optimization requirements for high efficiency are outlined. Innovative device designs to reduce recombination in the bulk and interfaces of single crystalline cells and in the grain boundary of polycrystalline cells are reviewed.

Sah, C. T.↗
NASA NTRS1990

1.00 MeV proton radiation resistance studies of single-junction and single gap dual-junction amorphous-silicon alloy solar cells

A comparative study of the radiation resistance of a-Si:H and a-SiGe:H single-junction and a-Si:H dual-junction solar cells was conducted. The cells were irradiated with 1.00-MeV protons with fluences of 1.0 x 10 to the 14th, 5.0 x 10 to the 14th and 1.0 x 10 to the 15th/sq cm and characterized using I-V and quantum efficiency measurements. The radiation resistance of single-junction cells cannot be used to explain the behavior of dual-junction cells at a fluence of 1.0 x 10 to the 15th/sq cm. The a-Si H single-junction cells degraded the least of the three cells; a-SiGe:H single-junction cells showed the largest reduction in short-circuit current, while a-Si:H dual-junction cells exhibited the largest degradation in the open-circuit voltage. The quantum efficiency of the cells degraded more in the red part of the spectrum; the bottom junction degrades first in dual-junction cells.

Abdulaziz, Salman↗
NASA NTRS1985

Sensitivity analysis of low bulk resistivity solar cells

In an effort to identify critical parameters of single-junction solar cells and to determine their relative sensitivity, parametric analyses have been conducted with a computer code SPCOLAY. A receipt for high-efficiency cells emerges from the analyses that requires the primary ingredients of low bulk resistivity (0.1-0.2 ohm-cm), a bulk diffusion length as large as attainable (greater than 100 microns), and a small front surface recombination velocity (about 100 cm/sec). Other parameters appear to play less sensitive roles.

Lin, E. I. H.↗
NASA NTRS2001

Cell-cycle research with synchronous cultures: an evaluation

The baby-machine system, which produces new-born Escherichia coli cells from cultures immobilized on a membrane, was developed many years ago in an attempt to attain optimal synchrony with minimal disturbance of steady-state growth. In the present article, we put forward a model to describe the behaviour of cells produced by this method, and provide quantitative evaluation of the parameters involved, at each of four different growth rates. Considering the high level of selection achievable with this technique and the natural dispersion in interdivision times, we believe that the output of the baby machine is probably close to optimal in terms of both quality and persistence of synchrony. We show that considerable information on events in the cell cycle can be obtained from populations with age distributions very much broader than those achieved with the baby machine and differing only modestly from steady state. The data presented here, together with the long and fruitful history of findings employing the baby-machine technique, suggest that minimisation of stress on cells is the single most important factor for successful cell-cycle analysis.

Non-NASA Center↗
NASA NTRS1991

Progress toward the development of dual junction GaAs/Ge solar cells

Large area GaAs/Ge cells offer substantial promise for increasing the power output from existing silicon solar array designs and for providing an enabled technology for missions hitherto impossible using silicon. Single junction GaAs/Ge cells offer substantial advantages in both size, weight, and cost compared to GaAs cells but the efficiency is limited to approximately 19.2 to 20 percent AMO. The thermal absorptance of GaAs/Ge cells is also worse than GaAs/GaAs cells (0.88 vs 0.81 typ.) due to the absorption in the Ge substrate. On the other hand dual junction GaAs/Ge cells offer efficiencies up to ultimately 24 percent AMO in sizes up to 8 x 8 cm but there are still technological issues remaining to achieve current matching in the GaAs and Ge cells. This can be achieved through tuned antireflection (AR) coatings, improved quality of the GaAs growth, improved quality Ge wafers and the use of a Back Surface Field (BSF)/Back Surface Reflector (BSR) in the Ge cell. Although the temperature coefficients of efficiency and voltage are higher for dual junction GaAs/Ge cells, it has been shown elsewhere that for typical 28 C cell efficiencies of 22 percent (dual junction) vs 18.5 percent (single junction) there is a positive power tradeoff up to temperatures as high as 120 C. Due to the potential ease of fabrication of GaAs/Ge dual junction cells there is likely to be only a small cost differential compared to single junction cells.

Lillington, D. R.↗
NASA NTRS1980

Performance of silicon solar cells fabricated from multiple Czochralski ingots grown by using a single crucible

Results on the performance of solar cells fabricated on wafers from multiple silicon ingots of large diameter, grown by using a single crucible and a sequential melt replenishment Czochralski (CZO) technique are presented. Samples were analyzed for resistivity, dislocation density and impurity content. Solar cells were fabricated from the seed, center and tang end of each ingot to evaluate the growth reproducibility and material quality. The cell efficiency within a given wafer varies by no more than plus or minus 5% of the average value. A small but consistent decrease in the cell efficiency is observed from the first to the fourth ingot grown from a single crucible. This decrease may be related to an increase in impurity content or dislocation density or a combination of both. The efficiency of the cells fabricated from the tang end of the fourth ingot is about 10% lower than that of the control cell. An impurity effects model is employed to correlate this decrease in efficiency with the impurity build-up in the residual melt.

Kachare, A. H.↗
NASA NTRS2001

Status of Photovoltaic Calibration and Measurement Standards

The 7th International Workshop on Space Solar Cell Calibration and Measurement was held on September 25-27, 2000 in Girdwood, Alaska. Representatives from eight countries discussed international standards for single and multijunction solar cell measurement and calibration methods, round robin intercomparisons, and irradiation test methods for space solar cells. Progress toward adoption of an ISO standard on single junction cells was made. Agreement was reached to begin work on new standards for multijunction cells and irradiation testing. Progress on present single junction round robin measurements was discussed and future multijunction round robins were planned. The next workshop will be held in Germany in October 2001.

Baraona, Cosmo↗
NASA NTRS2016

Heavy Ion Irradiation Fluence Dependence for Single-Event Upsets in a NAND Flash Memory

We investigated the single-event effect (SEE) susceptibility of the Micron 16 nm NAND flash, and found that the single-event upset (SEU) cross section varied inversely with cumulative fluence. We attribute the effect to the variable upset sensitivities of the memory cells. Furthermore, the effect impacts only single cell upsets in general. The rate of multiple-bit upsets remained relatively constant with fluence. The current test standards and procedures assume that SEU follow a Poisson process and do not take into account the variability in the error rate with fluence. Therefore, traditional SEE testing techniques may underestimate the on-orbit event rate for a device with variable upset sensitivity.

NAND flash memory↗
NASA NTRS1995

Flight data from the PASP-Plus experiment

The photovoltaic array space power (PASP)-Plus solar cell flight experiment is described, and the observed performances of different solar cell types during the first six months of their operation, are summarized. The solar cell types include single crystal and amorphous silicon, GaAs, several multijunction cell types, indium phosphide and GaAs/GaSb concentrator cells. The radiation degradation experienced by some of the solar cell types agrees with theoretical predictions. Other samples, including silicon, are degraded less than predicted. Effects, including the increase in temperature of all the experiments and the effect of sun glint on cell measurement, are discussed.

Marvin, D. C.↗