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At least 451 records · Page 25

Quantum fluctuation theorem for error diagnostics in quantum annealers

Near term quantum hardware promises unprecedented computational advantage. Crucial in its development is the characterization and minimization of computational errors. We introduce the use of the quantum fluctuation theorem to benchmark the accuracy of quantum annealers. This versatile tool provides simple means to determine whether the quantum dynamics are unital, unitary, and adiabatic, or whether the system is prone to thermal noise. Our proposal is experimentally tested on two generations of the D-Wave machine, which illustrates the sensitivity of the fluctuation theorem to the smallest aberrations from ideal annealing. In addition, for the optimally operating D-Wave machine, our experiment provides the first experimental verification of the integral fluctuation in an interacting, many-body quantum system.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Addressing quantum’s “fine print” with efficient state preparation and information extraction for quantum algorithms and geologic fracture networks

Abstract Quantum algorithms provide an exponential speedup for solving certain classes of linear systems, including those that model geologic fracture flow. However, this revolutionary gain in efficiency does not come without difficulty. Quantum algorithms require that problems satisfy not only algorithm-specific constraints, but also application-specific ones. Otherwise, the quantum advantage carefully attained through algorithmic ingenuity can be entirely negated. Previous work addressing quantum algorithms for geologic fracture flow has illustrated core algorithmic approaches while incrementally removing assumptions. This work addresses two further requirements for solving geologic fracture flow systems with quantum algorithms: efficient system state preparation and efficient information extraction. Our approach to addressing each is consistent with an overall exponential speed-up.

58 GEOSCIENCES↗

Calculation of metamorphic two-dimensional quantum energy system: Application to wetting layer states in InAs/InGaAs metamorphic quantum dot nanostructures

In this work, we calculate the two-dimensional quantum energy system of the In(Ga)As wetting layer that arises in InAs/InGaAs/GaAs metamorphic quantum dot structures. Model calculations were carried on the basis of realistic material parameters taking in consideration their dependence on the strain relaxation of the metamorphic buffer; results of the calculations were validated against available literature data. Model results confirmed previous hypothesis on the extrinsic nature of the disappearance of wetting layer emission in metamorphic structures with high In composition. We also show how, by adjusting InGaAs metamorphic buffer parameters, it could be possible: (i) to spatially separate carriers confined in quantum dots from wetting layer carriers, (ii) to create an hybrid 0D-2D system, by tuning quantum dot and wetting layer levels. These results are interesting not only for the engineering of quantum dot structures but also for other applications of metamorphic structures, as the two design parameters of the metamorphic InGaAs buffer (thickness and composition) provide additional degrees of freedom to control properties of interest.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Quantum emitters dynamically coupled to a quantum field

We study theoretically the dynamical response of a set of solid-state quantum emitters arbitrarily coupled to a single-mode microcavity system. Ramping the matter-field coupling strength in round trips, we quantify the hysteresis or irreversible quantum dynamics. The matter-field system is modeled as a finite-size Dicke model which has previously been used to describe equilibrium (including quantum phase transition) properties of systems such as quantum dots in a microcavity. Here we extend this model to address non-equilibrium situations. Analyzing the system’s quantum fidelity, we find that the near-adiabatic regime exhibits the richest phenomena, with a strong asymmetry in the internal collective dynamics depending on which phase is chosen as the starting point. We also explore signatures of the crossing of the critical points on the radiation subsystem by monitoring its Wigner function; then, the subsystem can exhibit the emergence of non-classicality and complexity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Simulation of quantum dots size and spacing effect for intermediate band solar cell application based on InAs quantum dots arrangement in GaAs

Intermediate band solar cell (IBSC) has become a promising technology in increasing solar cell efficiency. In this work we compare absorption coefficient profile between InAs quantum dots with GaAs bulk. We calculate the efficiency of GaAs bulk and GaAs doped with 2, 5, and 10 nm InAs quantum dot. Effective distances in quantum dot arrangement based on electron tunneling consideration were also calculated. We presented a simple calculation method with low computing power demand. Results showed that arrangement of quantum dot InAs in GaAs can increase solar cell efficiency from 23.9 % initially up to 60.4%. The effective distance between two quantum dots was found 2 nm in order to give adequate distance to prevent electron tunneling and wave functions overlap.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Efficient self-consistent quantum transport simulator for quantum devices

We present a self-consistent one-dimensional (1D) quantum transport simulator based on the Contact Block Reduction (CBR) method, aiming for very fast and robust transport simulation of 1D quantum devices. Applying the general CBR approach to 1D open systems results in a set of very simple equations that are derived and given in detail for the first time. The charge self-consistency of the coupled CBR-Poisson equations is achieved by using the predictor-corrector iteration scheme with the optional Anderson acceleration. In addition, we introduce a new way to convert an equilibrium electrostatic barrier potential calculated from an external simulator to an effective doping profile, which is then used by the CBR-Poisson code for transport simulation of the barrier under non-zero biases. The code has been applied to simulate the quantum transport in a double barrier structure and across a tunnel barrier in a silicon double quantum dot. Extremely fast self-consistent 1D simulations of the differential conductance across a tunnel barrier in the quantum dot show better qualitative agreement with experiment than non-self-consistent simulations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Quantum beats from the coherent interaction of hole states with surface state in near-surface quantum well

We report tunneling assisted beating of carriers in a near-surface single GaAsP/AlGaAs quantum well using transient reflectivity measurement. The observed damped oscillating signal has a period of 120 ± 6 fs which corresponds to the energy difference between lh1 and hh2 hole states in the quantum well. Comparing the transient reflectivity signal at different photon energies and with a buried quantum well sample, we show that the beating is caused by the coherent coupling between surface state and the hole states (lh1 and hh2) in the near-surface quantum well. The dependence of decay of coherence of these tunneling carriers on the excitation fluence is also reported. This observation on the coherent tunneling of carrier is important for future quantum device applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

GaSb quantum rings in GaAs/Al{sub x}Ga{sub 1−x}As quantum wells

We report the results of continuous and time-resolved photoluminescence measurements on type-II GaSb quantum rings embedded within GaAs/Al{sub x}Ga{sub 1−x}As quantum wells. A range of samples were grown with different well widths, compensation-doping concentrations within the wells, and number of quantum-ring layers. We find that each of these variants have no discernible effect on the radiative recombination, except for the very narrowest (5 nm) quantum well. In contrast, single-particle numerical simulations of the sample predict changes in photoluminescence energy of up to 200 meV. This remarkable difference is explained by the strong Coulomb binding of electrons to rings that are multiply charged with holes. The resilience of the emission to compensation doping indicates that multiple hole occupancy of the quantum rings is required for efficient carrier recombination, regardless of whether these holes come from doping or excitation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Complex quantum transport in a modulation doped strained Ge quantum well heterostructure with a high mobility 2D hole gas

The complex quantum transport of a strained Ge quantum well (QW) modulation doped heterostructure with two types of mobile carriers has been observed. The two dimensional hole gas (2DHG) in the Ge QW exhibits an exceptionally high mobility of 780 000 cm{sup 2}/Vs at temperatures below 10 K. Through analysis of Shubnikov de-Haas oscillations in the magnetoresistance of this 2DHG below 2 K, the hole effective mass is found to be 0.065 m{sub 0}. Anomalous conductance peaks are observed at higher fields which deviate from standard Shubnikov de-Haas and quantum Hall effect behaviour due to conduction via multiple carrier types. Despite this complex behaviour, analysis using a transport model with two conductive channels explains this behaviour and allows key physical parameters such as the carrier effective mass, transport, and quantum lifetimes and conductivity of the electrically active layers to be extracted. This finding is important for electronic device applications, since inclusion of highly doped interlayers which are electrically active, for enhancement of, for example, room temperature carrier mobility, does not prevent analysis of quantum transport in a QW.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Time-warping invariant quantum recurrent neural networks via quantum-classical adaptive gating

Adaptive gating plays a key role in temporal data processing via classical recurrent neural networks (RNNs), as it facilitates retention of past information necessary to predict the future, providing a mechanism that preserves invariance to time warping transformations. This paper builds on quantum RNNs (QRNNs), a dynamic model with quantum memory, to introduce a novel class of temporal data processing quantum models that preserve invariance to time-warping transformations of the (classical) input-output sequences. The model, referred to as time warping-invariant QRNN (TWI-QRNN), augments a QRNN with a quantum–classical adaptive gating mechanism that chooses whether to apply a parameterized unitary transformation at each time step as a function of the past samples of the input sequence via a classical recurrent model. The TWI-QRNN model class is derived from first principles, and its capacity to successfully implement time-warping transformations is experimentally demonstrated on examples with classical or quantum dynamics.

97 MATHEMATICS AND COMPUTING↗

Quantum simulation of quantum field theory using continuous variables

Much progress has been made in the field of quantum computing using continuous variables over the last couple of years. This includes the generation of extremely large entangled cluster states (10,000 modes, in fact) as well as a fault tolerant architecture. This has lead to the point that continuous-variable quantum computing can indeed be thought of as a viable alternative for universal quantum computing. With that in mind, we present a new algorithm for continuous-variable quantum computers which gives an exponential speedup over the best known classical methods. Specifically, this relates to efficiently calculating the scattering amplitudes in scalar bosonic quantum field theory, a problem that is known to be hard using a classical computer. Thus, we give an experimental implementation based on cluster states that is feasible with today's technology.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Scalar quantum field theories as a benchmark for near-term quantum computers

Quantum field theory (QFT) simulations are a potentially important application for noisy intermediate scale quantum (NISQ) computers. The ability of a quantum computer to emulate a QFT therefore constitutes a natural application-centric benchmark. Foundational quantum algorithms to simulate QFT processes rely on fault-tolerant computational resources, but to be useful on NISQ machines, error-resilient algorithms are required. Here we outline and implement a hybrid algorithm to calculate the lowest energy levels of the paradigmatic 1+1–dimensional $\phi$ 4 interacting scalar QFT. We calculate energy splittings and compare results with experimental values obtained on currently available quantum hardware. We show that the accuracy of mass-renormalization calculations represents a useful metric with which near-term hardware may be benchmarked. Finally, we also discuss the prospects of scaling the algorithm to full simulation of interacting QFTs on future hardware.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Strain-tuned quantum criticality in electronic Potts-nematic systems

Motivated by recent observations of threefold rotational symmetry breaking in twisted moiré systems, cold-atom optical lattices, quantum Hall systems, and triangular antiferromagnets, we phenomenologically investigate the strain-temperature phase diagram of the electronic 3-state Potts-nematic order. While in the absence of strain the quantum Potts-nematic transition is first-order, quantum critical points (QCP) emerge when uniaxial strain is applied, whose nature depends on whether the strain is compressive or tensile. In one case, the nematic amplitude jumps between two non-zero values while the nematic director remains pinned, leading to a symmetry-preserving metanematic transition that terminates at a quantum critical end-point. For the other type of strain, the nematic director unlocks from the strain direction and spontaneously breaks an in-plane twofold rotational symmetry, which in twisted moiré superlattices triggers an electric polarization. Such a piezoelectric transition changes from first to second-order upon increasing strain, resulting in a quantum tricritical point. Using a Hertz-Millis approach, we show that these QCPs share interesting similarities with the widely studied Ising-nematic QCP. The existence of three minima in the nematic action also leaves fingerprints in the strain-nematic hysteresis curves, which display multiple loops. At non-zero temperatures, because the upper critical dimension of the 3-state Potts model is smaller than three, the Potts-nematic transition is expected to remain first-order in 3D, but to change to second-order in 2D. As a result, the 2D strain-temperature phase diagram displays two first-order transition wings bounded by lines of critical end-points or tricritical points, reminiscent of the phase diagram of metallic ferromagnets. Furthermore, we discuss how our results can be used to unambiguously identify spontaneous Potts-nematic order.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Quantum work and the thermodynamic cost of quantum measurements

Quantum work is usually determined from two projective measurements of the energy at the beginning and at the end of a thermodynamic process. However, this paradigm cannot be considered thermodynamically consistent as it does not account for the thermodynamic cost of these measurements. To remedy this conceptual inconsistency we introduce a paradigm that relies only on the expected change of the average energy given the initial energy eigenbasis. In particular, we completely omit quantum measurements in the definition of quantum work, and hence quantum work is identified as a thermodynamic quantity of only the system. As main results we derive a modified quantum Jarzynski equality and a sharpened maximum work theorem in terms of the information free energy. Lastly, a comparison of our results with the standard approach allows one to quantify the informational cost of projective measurements.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Benchmarking Quantum Simulators Using Ergodic Quantum Dynamics

Here we propose and analyze a sample-efficient protocol to estimate the fidelity between an experimentally prepared state and an ideal target state, applicable to a wide class of analog quantum simulators without advanced spatiotemporal control. Our protocol relies on universal fluctuations emerging from generic Hamiltonian dynamics, which we discover in the present work. It does not require fine-tuned control over state preparation, quantum evolution, or readout capability, while achieving near optimal sample complexity: a percent-level precision is obtained with ~103 measurements, independent of system size. Furthermore, the accuracy of our fidelity estimation improves exponentially with increasing system size. We numerically demonstrate our protocol in a variety of quantum simulator platforms, including quantum gas microscopes, trapped ions, and Rydberg atom arrays. We discuss applications of our method for tasks such as multiparameter estimation of quantum states and processes.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Electrical and optical properties of near-surface AlGaAs/InGaAs/AlGaAs quantum wells with different quantum-well depths

A series of AlGaAs/InGaAs/AlGaAs quantum-well heterostructures with different quantum-well depths and approximately the same concentrations of two-dimensional electrons is grown by molecular-beam epitaxy. The built-in electric field in the grown samples is determined from the photoreflectance data and, on this basis, the energy-band structure in the quantum-well region is calculated. It is found that the highest mobility {mu}{sub e} of two-dimensional electrons is attained in the sample with a barrier-layer thickness of L{sub b} = 11 nm. Measurements of the photoluminescence spectra and the band-structure calculations demonstrate that, as the quantum well becomes closer to the surface, the doping profile broadens due to diffusion and segregation processes. The nonmonotonic dependence of {mu}{sub e} on the distance between the surface and the quantum well is explained.

36 MATERIALS SCIENCE↗