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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 451 records · Page 25
All sourcesNASA NTRSDOE OSTI
DOE OSTI2017

Quantum Many-Body Effects in Defective Transition-Metal-Oxide Superlattices

Strong electronic correlations, interfaces, and defects, and disorder each individually challenge the theoretical methods for predictions of materials properties. These challenges are all simultaneously present in complex transition-metal-oxide interfaces and superlattices, which are known to exhibit unique and unusual properties caused by multiple coupled degrees of freedom and strong electronic correlations. Here we show that ab initio quantum Monte Carlo (QMC) solutions of the many-electron problem are now possible for the full complexity of these systems. Within a single nonempirical theoretical approach, we unambiguously establish the site-specific stability of oxygen vacancies in the (LaFeO 3 ) 2 /(SrFeO 3 ) superlattice, accounting for experimental data, and predict their migration pathways. Further, QMC calculations are now capable of playing a major role in the elucidation of many-body phenomena in complex oxides previously out of reach of first-principles theories.

Approximation↗
DOE OSTI2016

The crystal structure, orientation relationships and interfaces of the nanoscale oxides in nanostructured ferritic alloys

The capability of nanostructured ferritic alloys (NFAs) to manage high levels of transmutation product helium will help resolve one of the grand challenges to transforming the promise of C-free fusion energy into a reality. NFAs are dispersion strengthened by an ultrahigh density of Y-Ti-O nano-oxides (NOs), which result in both high strength and temperature limits, as well as unique irradiation tolerance. We used aberration-corrected high-resolution transmission electron microscopy to characterize the NOs in four NFA conditions, including following severe deformation and extreme neutron radiation exposure. Fast Fourier Transform analysis of focal series images revealed the NO crystal structure, including the smallest at < 2 nm in diameter, to be Y 2 Ti 2 O 7 pyrochlore in all cases, consistent with both exit wave analysis and scanning transmission Z-contrast imaging of the atomic columns in a larger feature. The faceted NOs exhibit a quasi-epitaxial orientation relationship with the ferrite matrix: [110] YTO ||[100] Fe and [001] YTO ||[010] Fe , forming a 5 × 7 near coincidence site interface. Also, the NOs exhibit size-dependent strains in both the oxide and matrix ferrite phases.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Dynamic Evolution of Palladium Single Atoms on Anatase Titania Support Determines the Reverse Water–Gas Shift Activity

Research interest in single-atom catalysts (SACs) has been continuously rising. However, the lack of understanding of the dynamic behaviors of SACs during applications hinder catalyst development and mechanistic understanding. Herein, we report on the evolution of active sites over Pd/TiO 2 -anatase SAC (Pd 1 /TiO 2 ) in the reverse water-gas shift (rWGS) reaction. Combining kinetics, in-situ characterization, and theory, we show that at T ≥ 350 °C, the reduction of TiO 2 by H 2 alters the coordination environment of Pd, creating Pd sites with partially cleaved Pd-O interfacial bonds and a unique electronic structure that exhibit high intrinsic rWGS activity through the carboxyl pathway. The activation by H 2 is accompanied by the partial sintering of single Pd atoms (Pd 1 ) into disordered, flat, ~1 nm diameter clusters (Pd n ). The highly active Pd sites in the new coordination environment under H 2 are eliminated by oxidation, which, when performed at high temperature, also re-disperses Pd n and facilitates the reduction of TiO 2 . In contrast, Pd 1 sinters into crystalline, ~5 nm particles (Pd NP ) during CO treatment, deactivating Pd 1 /TiO 2 . During the rWGS reaction, the two Pd evolution pathways co-exist. The activation by H 2 dominates, leading to the increasing rate with time-on-stream, and steady-state Pd active sites similar with the ones formed under H 2 . Finally, this work demonstrates how the coordination environment and nuclearity of metal sites on a SAC evolve during catalysis and pre-treatments, and how their activity is modulated by these behaviors. These insights on SAC dynamics and structure-function relationship are valuable to mechanistic understanding and catalyst design.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Quantum physical reality of polar-nonpolar oxide heterostructures

Conducting interfaces between polar and nonpolar insulating oxides, e.g., LaAlO 3 /SrTiO 3 , have generated interest for both fundamental physics and oxide-electronics applications. Current understanding is based on an amalgamation of a classical electrostatic model (polar catastrophe model) that was originally derived for semi-infinite solids and quantum density-functional-theory (DFT) results on ultrathin films. Here we report comprehensive DFT calculations that unveil a very different purely quantum physical reality. We show that, for ultrathin polar films, the interfacial dipole does not control the electrostatic potential in the polar film—the surface and interface play equal roles, and the absence or presence of centrosymmetry in the physical LAO film results in different, purely quantum mechanisms for the generation of a conducting interface, neither involving physical-charged transfer. Predictions are made that can be tested and can guide technology development.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Tungsten Incorporation into Gallium Oxide: Crystal Structure, Surface and Interface Chemistry, Thermal Stability and Interdiffusion

Tungsten (W) incorporated gallium oxide (Ga2O3) (GWO) thin films were deposited by radio-frequency magnetron co-sputtering of W-metal and Ga2O3-ceramic targets. Films were produced by varying sputtering power applied to the W-target in order to achieve variable W-content (0-12 at%) into Ga2O3 while substrate temperature was kept constant at 500 °C. Chemical composition, chemical valence states, microstructure and crystal structure of as-deposited and annealed GWO films were evaluated as a function of W-content. The structural and chemical analyses indicate that the samples deposited without any W-incorporation are stoichiometric, nanocrystalline Ga2O3 films, which crystallize in β-phase monoclinic structure. While GWO films also crystallize in monoclinic β-Ga2O3 phase, W-incorporation induces surface amorphization as revealed by structural studies. The chemical valence state of Ga ions probed by X-ray photoelectron spectroscopic (XPS) analyses is characterized by the highest oxidation state i.e., Ga3+. No changes in Ga chemical state are noted for variable W-incorporation in the range of 0-12 at%. Rutherford backscattering spectrometry (RBS) analyses indicate the uniform distribution of W-content in the GWO films. However, XPS analyses indicate the formation of mixed valence states for W ions, which may be responsible for surface amorphization in GWO films. GWO films were stable up to 900 oC, at which point thermally induced secondary phase (W-oxide) formation was observed. A transition to mesoporous structure coupled with W interdiffusion occurs due to thermal annealing as derived from the chemical analyses at the GWO films’ surface as well as depth-profiling towards the GWO-Si interface. A model has been formulated to account for the mechanism of W-incorporation, thermal stability and interdiffusion via pore formation in GWO films.

Chemical composition↗
DOE OSTI2026

Enhanced Manganese Oxidation at the Biofilm–Fluid Interface Drives Pore-Scale Patterns in Mineral Precipitation

Microbial oxidation of manganese (Mn) from aqueous Mn(II) to solid-phase Mn(III, IV) minerals catalyzes Mn(II) removal in natural and engineered porous systems. However, little is known about the spatiotemporal evolution of Mn biomineralization in confined spaces that experience simultaneous Mn(II) delivery and Mn oxide precipitation. Here, we combine time-lapse microscopy, image analysis, and mass spectrometry to quantify the extent and rate of Mn biomineralization by Pseudomonas putida GB-1 in an optically transparent two-dimensional porous medium. We found that Mn(II) oxidation initially occurred within biofilms but shifted over time toward the edges of biofilms in contact with pore fluid. Minerals precipitated outside of the initial biofilm footprint likely due to surface-mediated oxidation of Mn(II) by nascent biogenic Mn oxides, reinforcing a gradient in mineral accumulation from the Mn(II) source near the reactor inlet to the outlet. The rate of mineral precipitation outside the biofilm footprint surpassed the rate of mineral accumulation inside biofilms within 6 h and accounted for two-thirds of the total Mn oxide mass in the pore space at the end of the experiment. This work advances a mechanistic understanding of coupled biotic and abiotic Mn oxidation in porous environments while providing a novel platform to quantify microbe-mineral-fluid interactions.

Biofilms↗
NASA NTRS1984

Thermal oxidation of 3C silicon carbide single-crystal layers on silicon

Thermal oxidation of thick single-crystal 3C SiC layers on silicon substrates was studied. The oxidations were conducted in a wet O2 atmosphere at temperatures from 1000 to 1250 C for times from 0.1 to 50 h. Ellipsometry was used to determine the thickness and index of refraction of the oxide films. Auger analysis showed them to be homogeneous with near stoichiometric composition. The oxide growth followed a linear parabolic relationship with time. Activation energy of the parabolic rate constant was found to be 50 kcal/mole, while the linear rate constant was 74 kcal/mole. The latter value corresponds approximately to the energy required to break a Si-C bond. Electrical measurements show an effective density of 4-6 x 10 to the 11th per sq cm for fixed oxide charges at the oxide-carbide interface, and the dielectric strength of the oxide film is aproximately 6 x 10 to the 6th V/cm.

Fung, C. D.↗
DOE OSTI2015

Oxide 2D electron gases as a route for high carrier densities on (001) Si

Two dimensional electron gases (2DEGs) formed at the interfaces of oxide heterostructures draw considerable interest owing to their unique physics and potential applications. Growing such heterostructures on conventional semiconductors has the potential to integrate their functionality with semiconductor device technology. We demonstrate 2DEGs on a conventional semiconductor by growing GdTiO{sub 3}-SrTiO{sub 3} on silicon. Structural analysis confirms the epitaxial growth of heterostructures with abrupt interfaces and a high degree of crystallinity. Transport measurements show the conduction to be an interface effect, ∼9 × 10{sup 13} cm{sup −2} electrons per interface. Good agreement is demonstrated between the electronic behavior of structures grown on Si and on an oxide substrate, validating the robustness of this approach to bridge between lab-scale samples to a scalable, technologically relevant materials system.

36 MATERIALS SCIENCE↗
DOE OSTI2014

The influence of carbon doping on the performance of Gd{sub 2}O{sub 3} as high-k gate dielectric

One of the approaches for overcoming the issue of leakage current in modern metal-oxide-semiconductor devices is utilizing the high dielectric constants of lanthanide based oxides. We investigated the effect of carbon doping directly into Gd{sub 2}O{sub 3} layers on the performance of such devices. It was found that the amount of carbon introduced into the dielectric is above the solubility limit; carbon atoms enrich the oxide-semiconductor interface and cause a significant shift in the flat band voltage of the stack. Although the carbon atoms slightly degrade this interface, this method has a potential for tuning the flat band voltage of such structures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1987

Tensile behavior of glass/ceramic composite materials at elevated temperatures

This paper describes the tensile behavior of high-temperature composite materials containing continuous Nicalon ceramic fiber reinforcement and glass and glass/ceramic matrices. The longitudinal properties of these materials can approach theoretical expectations for brittle matrix composites, failing at a strength and ultimate strain level consistent with those of the fibers. The brittle, high-modulus matrices result in a nonlinear stress-strain curve due to the onset of stable matrix cracking at 10 to 30 percent of the fiber strain to failure, and at strains below this range in off-axis plies. Current fibers and matrices can provide attractive properties well above 1000 C, but composites experience embrittlement in oxidizing atmospheres at 800 to 1000 C due to oxidation of a carbon interface reaction layer.The oxidation effect greatly increases the interface bond strength, causing composite embrittlement.

Mandell, J. F.↗
DOE OSTI2014

Ge interface engineering using ultra-thin La{sub 2}O{sub 3} and Y{sub 2}O{sub 3} films: A study into the effect of deposition temperature

A study into the optimal deposition temperature for ultra-thin La{sub 2}O{sub 3}/Ge and Y{sub 2}O{sub 3}/Ge gate stacks has been conducted in this paper with the aim to tailor the interfacial layer for effective passivation of the Ge interface. A detailed comparison between the two lanthanide oxides (La{sub 2}O{sub 3} and Y{sub 2}O{sub 3}) in terms of band line-up, interfacial features, and reactivity to Ge using medium energy ion scattering, vacuum ultra-violet variable angle spectroscopic ellipsometry (VUV-VASE), X-ray photoelectron spectroscopy, and X-ray diffraction is shown. La{sub 2}O{sub 3} has been found to be more reactive to Ge than Y{sub 2}O{sub 3}, forming LaGeO{sub x} and a Ge sub-oxide at the interface for all deposition temperature studied, in the range from 44 °C to 400 °C. In contrast, Y{sub 2}O{sub 3}/Ge deposited at 400 °C allows for an ultra-thin GeO{sub 2} layer at the interface, which can be eliminated during annealing at temperatures higher than 525 °C leaving a pristine YGeO{sub x}/Ge interface. The Y{sub 2}O{sub 3}/Ge gate stack deposited at lower temperature shows a sub-band gap absorption feature fitted to an Urbach tail of energy 1.1 eV. The latter correlates to a sub-stoichiometric germanium oxide layer at the interface. The optical band gap for the Y{sub 2}O{sub 3}/Ge stacks has been estimated to be 5.7 ± 0.1 eV from Tauc-Lorentz modelling of VUV-VASE experimental data. For the optimal deposition temperature (400 °C), the Y{sub 2}O{sub 3}/Ge stack exhibits a higher conduction band offset (>2.3 eV) than the La{sub 2}O{sub 3}/Ge (∼2 eV), has a larger band gap (by about 0.3 eV), a germanium sub-oxide free interface, and leakage current (∼10{sup −7} A/cm{sup 2} at 1 V) five orders of magnitude lower than the respective La{sub 2}O{sub 3}/Ge stack. Our study strongly points to the superiority of the Y{sub 2}O{sub 3}/Ge system for germanium interface engineering to achieve high performance Ge Complementary Metal Oxide Semiconductor technology.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Direct observation of both contact and remote oxygen scavenging of GeO{sub 2} in a metal-oxide-semiconductor stack

In the path to incorporating Ge based metal-oxide-semiconductor into modern nano-electronics, one of the main issues is the oxide-semiconductor interface quality. Here, the reactivity of Ti on Ge stacks and the scavenging effect of Ti were studied using synchrotron X-ray photoelectron spectroscopy measurements, with an in-situ metal deposition and high resolution transmission electron microscopy imaging. Oxygen removal from the Ge surface was observed both in direct contact as well as remotely through an Al{sub 2}O{sub 3} layer. The scavenging effect was studied in situ at room temperature and after annealing. We find that the reactivity of Ti can be utilized for improved scaling of Ge based devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Ubiquitous long-range antiferromagnetic coupling across the interface between superconducting and ferromagnetic oxides

The so-called proximity effect is the manifestation, across an interface, of the systematic competition between magnetic order and superconductivity. This phenomenon has been well documented and understood for conventional superconductors coupled with metallic ferromagnets; however it is still less known for oxide materials, where much higher critical temperatures are offered by copper oxide-based superconductors. In this paper, we show that, even in the absence of direct Cu–O–Mn covalent bonding, the interfacial CuO 2 planes of superconducting La 1.85 Sr 0.15 CuO 4 thin films develop weak ferromagnetism associated to the charge transfer of spin-polarised electrons from the La 0.66 Sr 0.33 MnO 3 ferromagnet. Theoretical modelling confirms that this effect is general to all cuprate/manganite heterostructures and the presence of direct bonding only affects the strength of the coupling. Finally, the Dzyaloshinskii–Moriya interaction, also at the origin of the weak ferromagnetism of bulk cuprates, propagates the magnetisation from the interface CuO 2 planes into the superconductor, eventually depressing its critical temperature.

36 MATERIALS SCIENCE↗