Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “nitridation”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 451 records · Page 25
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Simulation of gallium nitride vertical fin-shaped field effect transistor for use as thermal neutron detector

Through the use of a radiation detection system simulation framework, a gallium nitride vertical fin-shaped field effect transistor (FinFET) was studied for output response when utilized as a thermal neutron detector. The FinFET was assumed to had been backfilled with boron carbide, reactive to thermal neutrons. The GaN FinFET was modeled with radiation transport from MCNP, and the electronic transport from COMSOL Multiphysics. Fabricated FinFET devices (not neutron reactive) were tested to aid in the tuning of the COMSOL FinFET model. Through time-depenent studies, the drain current response pulse to simulated ionization due to single events lead to building of a database of device responses to radiation. By integrating the current pulses over time, the induced charge was calculated. Using the results of the radiation transport PTRAC file in combination with the induced charge database, an integrated charge spectrum was calculated.

Davidson, Bryce L.↗
DOE OSTI2024

Group-III nitride devices and systems on IBAD-textured substrates

A multilayer structure including a hexagonal epitaxial layer, such as GaN or other group III-nitride (III-N) semiconductors, a <111>oriented textured layer, and a non-single crystal substrate, and methods for making the same. The textured layer has a crystalline alignment preferably formed by the ion-beam assisted deposition (IBAD) texturing process and can be biaxially aligned. The in-plane crystalline texture of the textured layer is sufficiently low to allow growth of high quality hexagonal material, but can still be significantly greater than the required in-plane crystalline texture of the hexagonal material. The IBAD process enables low-cost, large-area, flexible metal foil substrates to be used as potential alternatives to single-crystal sapphire and silicon for manufacture of electronic devices, enabling scaled-up roll-to-roll, sheet-to-sheet, or similar fabrication processes to be used. The user is able to choose a substrate for its mechanical and thermal properties, such as how well its coefficient of thermal expansion matches that of the hexagonal epitaxial layer, while choosing a textured layer that more closely lattice matches that layer. Electronic devices such as LEDs can be manufactured from such structures. Because the substrate can act as both a reflector and a heat sink, transfer to other substrates, and use of external reflectors and heat sinks, is not required, greatly reducing costs. Large area devices such as light emitting strips or sheets may be fabricated using this technology.

Matias, Vladimir↗
DOE OSTI2024

Perovskite Grown in Gallium Nitride Nanowire Matrix for Stable and High‐Efficiency X‐Ray Detection

High-quality quasi-2D perovskites in a GaN nano-wire matrix are grown to build a 3D hetero-structure for high-performance X-ray sensing. In the 3D hetero-structure, GaN nano-wire matrix serves as an n-type charge collector that can rapidly extract carriers through the bulk film of the perovskite layer. Together with a p-type top electrode, a p–i–n diode with the 3D hetero-structure is built, that exhibits a rectified current–voltage characteristic. After analyzing the interface energy alignment, it is found that the fermi levels of the perovskite and GaN are aligned in the dark, and a quasi-fermi level splits upon illumination, introducing a built-in electrical field at the interface. As a result, strong photo-induced current is observed from the diode without an external field. Finally, the 3D diode for X-ray detection demonstration is used, revealing a sensitivity of 308.9 µC Gy air -1 cm -2 at an exceptionally low applied field of 0.125 V µm -1 . The X-ray-induced signal from the 3D diode is stable after 155 cycles of X-ray irradiation under a constant electric field. This demonstration informs a new 3D architecture for high-performance X-ray sensing, and it shows that GaN is a robust n-type interface for perovskite optoelectronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Metal Nitride Electrode Stress and Chemistry Effects on Phase and Polarization Response in Ferroelectric Hf 0.5 Zr 0.5 O 2 Thin Films

Ferroelectric phase stability in hafnium oxide is reported to be influenced by factors that include composition, biaxial stress, crystallite size, and oxygen vacancies. In the present work, the ferroelectric performance of atomic layer deposited Hf 0.5 Zr 0.5 O 2 (HZO) prepared between TaN electrodes that are processed under conditions to induce variable biaxial stresses is evaluated. The post-processing stress states of the HZO films reveal no dependence on the as-deposited stress of the adjacent TaN electrodes. All HZO films maintain tensile biaxial stress following processing, the magnitude of which is not observed to strongly influence the polarization response. Subsequent composition measurements of stress-varied TaN electrodes reveal changes in stoichiometry related to the different preparation conditions. HZO films in contact with Ta-rich TaN electrodes exhibit higher remanent polarizations and increased ferroelectric phase fractions compared to those in contact with N-rich TaN electrodes. HZO films in contact with Ta-rich TaN electrodes also have higher oxygen vacancy concentrations, indicating that a chemical interaction between the TaN and HZO layers ultimately impacts the ferroelectric orthorhombic phase stability and polarization performance. The results of this work demonstrate a necessity to carefully consider the role of electrode processing and chemistry on performance of ferroelectric hafnia films.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Investigation of Interlayer Dielectric in BaTiO 3 /III–Nitride Transistors

In this paper, the impact of varying the thickness of the Al 2 O 3 interlayer dielectric on the electrical characteristics of BaTiO 3 /III-nitride transistors is investigated. In the findings, it is revealed that a minimum thickness of 8 nm for the Al 2 O 3 layer is crucial to maintain high device performance and protect against sputtering-induced damage during BaTiO 3 deposition. The fabricated BaTiO 3 /Al 2 O 3 /AlGaN/GaN high electron mobility transistors exhibit exceptional electrical properties, including a maximum current density of 700 mA mm –1 , an on-resistance of 5 Ω mm, an I ON /I OFF ratio of 10 7 , a subthreshold slope of 119 mV dec –1 , and significantly reduced gate leakage current. The devices with the optimal 8 nm Al 2 O 3 thickness demonstrates excellent agreement between theoretical and experimental values for effective mobility, achieving a value of 1188 cm 2 V –1 ·s at a 2D electron gas density of 10 13 cm –2 . Furthermore, in the study, it is confirmed that increasing the Al 2 O 3 thickness also improves the quality of interface charge density, as evidenced by the results obtained from capacitance–voltage measurements. In these findings, the critical role of controlling the Al 2 O 3 thickness in optimizing the electrical characteristics and overall performance of BaTiO 3 /III-nitride transistors are highlighted.

42 ENGINEERING↗
DOE OSTI2025

Accelerated and heterogeneous corrosion of Cr-doped uranium nitride fuel pellets

The steam oxidation of Cr-doped UN fuel pellets is analyzed during sequential isothermal holds up to 720 °C. In situ neutron diffraction results show how Cr is accommodated in a secondary U 2 CrN 3 phase, leading to the formation of a duplex UN/U 2 CrN 3 microstructure. Under corrosion, the oxidation of the two phases begins at 400 °C for UN and 430 °C for U 2 CrN 3 , respectively. Because the UN phase is preferentially oxidized in the presence of U 2 CrN 3 , addition of Cr in UN based nuclear fuel is found to accelerate the corrosion rate. At 430 °C the oxidation of UN in the UN/U 2 CrN 3 microstructure is ~ 5 times faster than pure UN, increasing to ~19 times faster at 460 °C. The oxidation of U 2 CrN 3 produces UO 2 via the formation of two transient intermediate phases. In situ neutron diffraction enables oxidation processes of UN and U 2 CrN 3 components to be followed separately within the two-phase system.

11 - NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2021

Determination of impurities in cubic boron nitride (cBN) by inductively coupled plasma mass spectrometry (ICPMS)

The phase stability of cBN is critically dependent on the content and amount of impurities present. While studies have shown qualitatively that the addition of certain impurities can either increase or decrease the cBN-hBN phase transition temperature, studies have yet to show this effect quantitatively. This is because analytical methods to characterize minor and trace impurities in cBN are currently lacking. To this end, we present flux fusion methods capable of fully digesting cBN samples for ICPMS analyses. The materials used in this study are commercially available cBN powders in three different sizes. Two types of fluxes (LiOH and NaOH·H 2 O) are utilized so that both Li and Na impurities can be determined. To ensure the accuracy of Si measurements, a column chromatography method has been developed to purify Si from flux materials in order to increase the amount of dissolved sample sent to the ICP. Detection limits have been determined using procedural blanks and are found to be below 20 μg/g for all 58 elements analyzed except for Si, for which the detection limit is 312 μg/g. Nonetheless, all cBN powders studied are found to have high Si impurity levels that are above detection limit. This study provides a much-needed analytical protocol to enable comprehensive screening of impurities in cBN.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Uranium nitride (UN) pellets with controllable microstructure and phase – fabrication by spark plasma sintering and their thermal-mechanical and oxidation properties

Dense uranium mononitride (UN) pellets with controlled microstructures and tailored grain size from large-grained to a few microns are synthesized by spark plasma sintering (SPS) combined with high energy ball milling. The impacts of the sintering conditions on fuel microstructure, grain size, physical density, and phase behavior are systematically investigated, and the thermal-mechanical properties and oxidation behavior of the SPS densified UN pellets are characterized. Higher sintering temperatures and longer ball milling durations and thus finer starting UN powders promote sintering and densification, and dense UN pellets above 95% theoretical density can be achieved by SPS at 1873 K for 10 min. UN phase purity is maintained in the SPS-densified pellets sintered at a lower temperature and short duration. A phase heterogeneity with secondary UO 2 or uranium sesquinitride (U 2 N 3 ) occurs for the UN pellets sintered at higher temperatures using finer UN powders. The hardness and fracture toughness of the SPS-densified UN pellets increase with smaller grain sizes and higher densities to 7.9 GPa and 3.5 MPa m 1/2 , respectively. Furthermore, both small (1–2 μm) and large grain-sized (30–50 µm) UN pellets exhibit good thermal conductivity. Dynamic oxidation testing by a thermogravimetric analyzer in air shows that the onset temperature for oxidation varies with microstructure and phase heterogeneity of the SPS densified UN pellets. Particularly, the smaller-grained (micron-sized) UN pellets containing uranium oxides and U 2 N 3 display lower weight gain and significantly-reduced oxidation kinetics, and full oxidation completes at a temperature above 1173 K when tested with a ramp rate of 10 K/min.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Mechanistic nuclear fuel performance modeling of uranium nitride

Uranium mononitride (UN) is a nuclear fuel candidate for advanced reactor designs and an alternative being considered for light water reactors due to its higher thermal conductivity and uranium density than UO 2 . As with any nuclear fuel, swelling and fission gas release are important factors for safety, while also being some of the hardest phenomena to predict with a high degree of confidence. Getting a grasp on the gas swelling behavior and release is crucial to lower the barrier for UN utilization. An accelerated swelling rate at high temperatures observed experimentally, sometimes referred to as “breakaway swelling,” further complicates the prediction of fuel performance of UN. A mechanistic model has been developed using a multiscale approach to describe the intragranular and intergranular fission gas behavior. Lower-length-scale calculations have been employed to inform models of the gas and self-diffusion behavior, resolution rate, and bubble shape. Leveraging previous work on high burnup UO 2 , two populations of intragranular bubbles are considered; small bulk bubbles and larger bubbles located along dislocations. The dislocation bubbles were found to be crucial to the overall swelling behavior, and the breakaway swelling transition was associated with the transition in the gas atom diffusion mechanism from an irradiation-induced athermal diffusion regime at lower temperatures to an intrinsic thermal equilibrium regime at higher temperatures, accelerating the growth of the dislocation bubbles. Similarly, the threshold for fission gas release was associated with the grain boundary vacancy diffusivity surpassing the gas atom diffusivity at sufficiently high temperatures, allowing the over-pressurized grain boundary bubble to grow in size and interconnect. Using thermo-mechanical models with the fission gas model, two integral fuel pin assessment cases were simulated. Finally, this work demonstrates the ability of a multiscale approach to accelerate the understanding of advanced fuel forms when experimental data is limited.

11 - NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2020

Investigation of Off-Stoichiometry in Ternary Nitrides by EDS and HRTEM

We demonstrate an inverted metamorphic multijunction (IMM) photovoltaic cell comprising lattice-mismatched 1.2 eV AlGaInAs and 1.0 eV GaInAs junctions optimized for high-temperature thermophotovoltaic (TPV) applications. This device differs from traditional IMM solar cells because the mismatched junctions are grown at a single lattice constant. This architecture enables removal of the compositionally graded buffer which otherwise filters light from the junctions below and absorbs sub-bandgap light via free-carrier absorption. Sub-bandgap absorption dramatically reduces the efficiency of TPV systems using high reflectivity cells to enable bandedge spectrum filtering. Three components required development to enable this device: 1) a lattice-mismatched 1.2 eV AlGaInAs junction, 2) a metamorphic contact layer grown after the graded buffer, and 3) a transparent tunnel junction that sits in front of the 1.0 eV GaInAs junction. Growth conditions that minimize oxygen defect incorporation maximize AlGaInAs cell quality, enabling a 0.41 V bandgap open circuit voltage offset at 22 mA/cm2 under AM1.5D. A mismatched GaInAs:Se layer is developed as a low resistance contact. Lastly we develop a GaAsSb:C/GaInP:Se tunnel junction suitable for high-power densities with more transparency than the GaAsSb:C/GaInP:Se structure used in past IMM cells. We characterize the tandem device under a high-intensity spectrum that approximates the emission from a 2150 °C blackbody radiator and deduce a projected ideal TPV efficiency of 39.9% at ~30% of the blackbody irradiance, and 36% ideal TPV efficiency under the full 118 W/cm2 irradiance. Improvements to the back-surface reflectivity and series resistance are expected to increase the ideal TPV efficiency well above 40%.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗