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At least 451 records · Page 25
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Impacts to FeRAM design arising from interfacial dielectric layers and wake up modulation in ferroelectric hafnium zirconium oxide

As ferroelectric hafnium zirconium oxide (HZO) becomes more widely utilized in ferroelectric microelectronics, integration impacts of intentional and non-intentional dielectric interfaces and their effects upon the ferroelectric film wake up and circuit parameters become important to understand. In this work, the effect of the addition of a linear dielectric aluminum oxide, Al 2 O 3 , below a ferroelectric Hf 0.58 Zr 0.42 O 2 film in a capacitor structure for FeRAM applications with NbN electrodes was measured. Depolarization fields resulting from the linear dielectric is observed to induce a reduction of the remanent polarization of the ferroelectric. Addition of the aluminum oxide also impacts the wake up of the HZO with respect to the cycling voltage applied. Intricately linked to the design of a FeRAM 1C/1T cell, the metal-ferroelectric-insulator-metal (MFIM) devices are observed to significantly shift charge related to the read states based on aluminum oxide thickness and wake up cycling voltage. As a result, a 33% reduction in the separation of read states is measured, which complicates how a memory cell is designed and illustrates the importance of clean interfaces in devices.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2019

Enhanced thermal stability by introducing TiN diffusion barrier layer between W and SiC

The combination of W and SiC has many applications such as a hot cell of a thermionic energy converter, nuclear material, and high temperature microelectronics. In this study, a 2 µm thick TiN film is introduced as a diffusion barrier between SiC and W to avoid the inter-diffusion reaction at high temperature. Additionally, the effect of annealing temperature on the surface morphology and microstructure of the TiN film is studied to explore its high temperature stability. Then 500 nm W film is sputtered on the TiN film to characterize the inter-diffusion and stability of the W/TiN/SiC multilayer at 1100°C by XRD, Raman spectroscopy and cross-sectional EDS mapping techniques. The results indicate that the W/TiN/SiC multilayer is very stable even when heated at 1100°C for 25 hours.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Probing ultrathin film continuity and interface abruptness with x-ray photoelectron spectroscopy and low-energy ion scattering

The authors have examined ultrathin (≤10 Å) tantalum nitride (TaN{sub x}) thin films deposited by atomic layer deposition (ALD) on three surfaces relevant to interconnect layers in microelectronic devices: thermally grown SiO{sub 2}; a Cu thin film grown by physical vapor deposition, and a carbon-doped SiO{sub 2} porous low-κ thin film. The authors have employed ex situ angle-resolved x-ray photoelectron spectroscopy (ARXPS), low-energy ion scattering spectroscopy (LEISS), and atomic force microscopy (AFM) to determine the continuity of these thin films, and by implication, the abruptness of the thin film/substrate interface. On SiO{sub 2} and low-κ, the authors find similar results: both ARXPS and AFM indicate that smooth, uniform thin films are deposited, consistent with nearly layer-by-layer growth of TaN{sub x} on these surfaces. Examination of these films using LEISS reveals that while the 10 Å TaN{sub x} thin films are continuous, the 5 Å TaN{sub x} thin films are not continuous and may possess on the order of ∼10% exposed substrate in the form of small subnanometer inclusions. On Cu, the situation is quite different. The TaN{sub x} thin films on these surfaces are not continuous, and our results point to a mixed layer of TaN{sub x} and Cu forming during ALD. In all cases, if one were to rely solely on results from ARXPS, the picture would be incomplete as the results from LEISS are ultimately decisive concerning thin film continuity.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Tailored ion energy distributions on plasma electrodes

As microelectronic device features continue to shrink approaching atomic dimensions, control of the ion energy distribution on the substrate during plasma etching and deposition becomes increasingly critical. The ion energy should be high enough to drive ion-assisted etching, but not too high to cause substrate damage or loss of selectivity. In many cases, a nearly monoenergetic ion energy distribution (IED) is desired to achieve highly selective etching. In this work, the author briefly reviews: (1) the fundamentals of development of the ion energy distribution in the sheath and (2) methods to control the IED on plasma electrodes. Such methods include the application of “tailored” voltage waveforms on an electrode in continuous wave plasmas, or the application of synchronous bias on a “boundary electrode” during a specified time window in the afterglow of pulsed plasmas.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Space and phase resolved ion energy and angular distributions in single- and dual-frequency capacitively coupled plasmas

The control of ion energy and angular distributions (IEADs) is critically important for anisotropic etching or deposition in microelectronic fabrication processes. With single frequency capacitively coupled plasmas (CCPs), the narrowing in angle and spread in energy of ions as they cross the sheath are definable functions of frequency, sheath width, and mean free path. With increases in wafer size, single frequency CCPs are finding difficulty in meeting the requirement of simultaneously controlling plasma densities, ion fluxes, and ion energies. Dual-frequency CCPs are being investigated to provide this flexible control. The high frequency (HF) is intended to control the plasma density and ion fluxes, while the ion energies are intended to be controlled by the low frequency (LF). However, recent research has shown that the LF can also influence the magnitude of ion fluxes and that IEADs are determined by both frequencies. Hence, separate control of fluxes and IEADs is complex. In this paper, results from a two-dimensional computational investigation of Ar/O{sub 2} plasma properties in an industrial reactor are discussed. The IEADs are tracked as a function of height above the substrate and phase within the rf cycles from the bulk plasma to the presheath and through the sheath with the goal of providing insights to this complexity. Comparison is made to laser-induced fluorescence experiments. The authors found that the ratios of HF/LF voltage and driving frequency are critical parameters in determining the shape of the IEADs, both during the transit of the ion through the sheath and when ions are incident onto the substrate. To the degree that contributions from the HF can modify plasma density, sheath potential, and sheath thickness, this may provide additional control for the IEADs.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Low-temperature atomic layer deposition of TiO{sub 2} thin layers for the processing of memristive devices

Atomic layer deposition (ALD) represents one of the most fundamental techniques capable of satisfying the strict technological requirements imposed by the rapidly evolving electronic components industry. The actual scaling trend is rapidly leading to the fabrication of nanoscaled devices able to overcome limits of the present microelectronic technology, of which the memristor is one of the principal candidates. Since their development in 2008, TiO{sub 2} thin film memristors have been identified as the future technology for resistive random access memories because of their numerous advantages in producing dense, low power-consuming, three-dimensional memory stacks. The typical features of ALD, such as self-limiting and conformal deposition without line-of-sight requirements, are strong assets for fabricating these nanosized devices. This work focuses on the realization of memristors based on low-temperature ALD TiO{sub 2} thin films. In this process, the oxide layer was directly grown on a polymeric photoresist, thus simplifying the fabrication procedure with a direct liftoff patterning instead of a complex dry etching process. The TiO{sub 2} thin films deposited in a temperature range of 120–230 °C were characterized via Raman spectroscopy and x-ray photoelectron spectroscopy, and electrical current–voltage measurements taken in voltage sweep mode were employed to confirm the existence of resistive switching behaviors typical of memristors. These measurements showed that these low-temperature devices exhibit an ON/OFF ratio comparable to that of a high-temperature memristor, thus exhibiting similar performances with respect to memory applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Atomic layer deposition of (K,Na)(Nb,Ta)O{sub 3} thin films

Thin films of complex alkali oxides are frequently investigated due to the large range of electric effects that are found in this class of materials. Their piezo- and ferroelectric properties also place them as sustainable lead free alternatives in optoelectronic devices. Fully gas-based routes for deposition of such compounds are required for integration into microelectronic devices that need conformal thin films with high control of thickness- and composition. The authors here present a route for deposition of materials in the (K,Na)(Nb,Ta)O{sub 3}-system, including the four end members NaNbO{sub 3}, KNbO{sub 3}, NaTaO{sub 3}, and KTaO{sub 3}, using atomic layer deposition with emphasis on control of stoichiometry in such mixed quaternary and quinary compunds.

42 ENGINEERING↗
DOE OSTI2019

Next generation of extreme-resolution electron beam lithography

In top down nanofabrication research facilities around the world, the direct-write high-resolution patterning tool of choice is overwhelmingly electron beam lithography. Remarkably small features can be written in a variety of polymeric resists [V. R. Manfrinato et al., Nano Lett. 14, 4406 (2014); V. R. Manfrinato, A. Stein, L. Zhang, Y. Nam, K. G. Yager, E. A. Stach, and C. T. Black, Nano Lett. 17, 4562 (2017)]. However, this technology, which in this article the authors will refer to as conventional electron beam lithography (CEBL), is reaching its practical resolution and precision limits [V. R. Manfrinato et al., Nano Lett. 14, 4406 (2014)]. Hydrogen depassivation lithography (HDL) [J. N. Randall, J. W. Lyding, S. Schmucker, J. R. Von Ehr, J. Ballard, R. Saini, and Y. Ding, J. Vac. Sci. Technol. B 27, 2764 (2009); J. N. Randall, J. B. Ballard, J. W. Lyding, S. Schmucker, J. R. Von Ehr, R. Saini, H. Xu, and Y. Ding, Microelectron. Eng. 87, 955 (2010)] is a different version of electron beam lithography that is not limited in resolution and precision in the way that CEBL is. It uses a cold field emitter, a scanning tunneling microscope (STM) tip, to deliver a small spot of electrons on a Si (100) 2 × 1 H-passivated surface to expose a self-developing resist that is a monolayer of H adsorbed to the Si surface. Subnanometer features [S. Chen, H. Xu, K. E. J. Goh, L. Liu, and J. N. Randall, Nanotechnology 23, 275301 (2012)], and even the removal of single H atoms can be routinely accomplished [M. A. Walsh and M. C. Hersam, Annu. Rev. Phys. Chem. 60, 193 (2009)]. It is known that the H desorption process at low biases is a multielectron process [E. Foley, A. Kam, J. Lyding, and P. Avouris, Phys. Rev. Lett. 80, 1336 (1998)], but the tunneling distribution of the electrons from the STM tip to the Si surface lattice is not known. The authors have developed a simple model that demonstrates that the combination of two highly nonlinear processes creates a much higher contrast exposure mechanism than CEBL. Currently, HDL has been used almost exclusively on the Si (100) surface and has a limited number of pattern transfer techniques including Si and Ge patterned epitaxy, selective atomic layer deposition of TiO2 followed by reactive ion etching [J. B. Ballard, T. W. Sisson, J. H. G. Owen, W. R. Owen, E. Fuchs, J. Alexander, J. N. Randall, and J. R. Von Ehr, J. Vac. Sci. Technol. B 31, 06FC01 (2013)], and selective deposition of dopant atoms for quantum devices and materials [Workshop on 2D Quantum MetaMaterials held at NIST, Gaithersburg, MD, April 25–26, 2018, edited by J. Owen and W. P. Kirk]. While the throughput of HDL is very low, going parallel in a big way appears promising [J. N. Randall, J. H. G. Owen, J. Lake, R. Saini, E. Fuchs, M. Mahdavi, S. O. R. Moheimani, and B. C. Schaefer, J. Vac. Sci. Technol. B 36, 6 (2018)]. However, the most exciting aspect of HDL is its atomic-scale resolution and precision, which is key to nanoscale research. The authors see HDL emerging as the ultimate high-resolution patterning tool in top down nanofabrication research facilities.

42 ENGINEERING↗
DOE OSTI2020

Highly selective Si 3 N 4 /SiO 2 etching using an NF 3 /N 2 /O 2 /H 2 remote plasma. I. Plasma source and critical fluxes

Highly selective plasma etching of silicon nitride (Si 3 N 4 ), while not etching silicon dioxide (SiO 2 ), is a critical step in the fabrication of microelectronics devices. In many applications, this etching must be damage-free and isotropic, which then motivates the use of remote plasmas where the reactants interacting with the substrate are dominantly neutral species. In this paper and Paper II, mechanisms for highly selective Si 3 N 4 etching in remote plasmas are discussed based on results from experiments and simulations. It has been shown experimentally that high Si 3 N 4 /SiO 2 etch selectivity (≈380) can be achieved in the downstream effluent of an NF 3 /N 2 /O 2 /H 2 plasma. The authors found that H2 plays a principal role in the reaction mechanism as Si 3 N 4 /SiO 2 selectivity shows a sharp maximum as a function of the H2 flow rate. Based on this observation, and measured densities of F-atoms and H2 in the process chamber, a mechanism of selective Si 3 N 4 /SiO 2 etching is proposed in which HF molecules in vibrationally excited states accelerate etching reactions. A reaction mechanism for NF 3 /N 2 /O 2 /H 2 plasmas and its afterglow was developed to computationally determine the species densities and fluxes on the wafer level, validated by comparing with experimentally measured F-atom and H 2 densities. The calculated species densities and fluxes were used as input to an analytical model of Si 3 N 4 and SiO 2 etching based on the results of quantum chemistry simulations. This paper presents experimental results (etching data and species densities), the reaction mechanism for NF 3 /N 2 /O 2 /H 2 plasmas, and the results of simulations of gas phase chemistry. Quantum chemistry simulations of elementary etching reactions, description of the analytical model of Si 3 N 4 and SiO 2 etching, calculations of the etch rates, and Si 3 N 4 and SiO 2 selectivity with this model are presented in Paper II.

42 ENGINEERING↗
DOE OSTI2021

Scaling of atomic layer etching of SiO 2 in fluorocarbon plasmas: Transient etching and surface roughness

Fabricating sub-10 nm microelectronics places plasma processing precision at atomic dimensions. Atomic layer etching (ALE) is a cyclic plasma process used in semiconductor fabrication that has the potential to remove a single layer of atoms during each cycle. In self-limiting ideal ALE, a single monolayer of a material is consistently removed in each cycle, typically expressed as EPC (etch per cycle). In plasma ALE of dielectrics, such as SiO 2 and Si 3 N 4 , using fluorocarbon gas mixtures, etching proceeds through deposition of a thin polymer layer and the process is not strictly self-terminating. As a result, EPC is highly process dependent and particularly sensitive to the thickness of the polymer layer. In this paper, results are discussed from a computational investigation of the ALE of SiO 2 on flat surfaces and in short trenches using capacitively coupled plasmas consisting of a deposition step (fluorocarbon plasma) and an etch step (argon plasma). We found that ALE performance is a delicate balance between deposition of polymer during the first half cycle and etching (with polymer removal) during the second half cycle. In the absence of complete removal of the overlying polymer in each cycle, ALE may be transient as the polymer thickness grows with each cycle with a reduction in EPC until the thickness is too large to enable further etching. Small and statistical amounts of polymer left from a previous cycle can produce statistical variation in polymer thickness on the next cycle, which in turn can lead to a spatially dependent EPC and ALE roughness. Based on synergy between T i (sputtering time) and T p (passivation time), dielectric ALE can be described as having three modes: deposition, roughening surface (transitioning to etch-stop), and smooth surface with steady-state EPC.

Materials Science↗
DOE OSTI2022

Fabrication of ultrathin suspended membranes from atomic layer deposition films

In this report, ultrathin films suspended as freestanding membranes are critical to many microelectronic and materials science applications. However, fabrication methods are currently limited in either their flexibility, due to material selectivity issues during the final membrane release, or their scalability. Here, we demonstrate a novel fabrication process for suspending ultrathin films with thicknesses as low as 4 nm and lateral dimensions up to 20 x 1000 μm from a variety of materials grown by atomic layer deposition. A silicon nitride membrane serves as the support for a sacrificial polymer layer and an ultrathin atomic layer deposition film which, after plasma etching, will form the membrane. The high chemical selectivity between atomic layer deposition-grown transition metal nitrides and oxides and the sacrificial polymer means that ultrathin films of a variety of materials can be released without damage using a single process. Electrically conductive titanium nitride membranes can be produced by this method and are of significant interest for electron microscopy applications. Electron transparency of titanium nitride membranes was found to be ~14% higher than silicon nitride of the same thickness, and of similar conductivity to graphite, meaning that ultrathin, conductive, and electron transparent membranes can be fabricated at scale. These membranes are ideal supports for electron and photon characterization techniques, as well as microelectromechanical system applications that require a conductive membrane.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Operando study of HfO 2 atomic layer deposition on partially hydroxylated Si(111)

The introduction of atomic layer deposition (ALD), to the microelectronics industry has introduced a large number of new possible materials able to be deposited in layers with atomic thickness control. One such material is the high-κ oxide HfO 2 ; thermally stable and ultrathin HfO 2 films deposited by ALD are a significant contender to replace SiO 2 as the gate oxide in capacitor applications. We present a mechanistic study of the first deposition cycle of HfO 2 on the Si(111) surface using tetrakis(dimethylamido) hafnium (TDMAHf) and water as precursors using operando ambient pressure x-ray photoelectron spectroscopy. Here, we show that the hydroxylation of the clean Si(111) surface by residual water vapor, resulting in a 0.3 monolayer coverage of hydroxyls, leads to instantaneous full surface coverage of TDMAHf. The change in the atomic ratio of Hf to C/N found during the first deposition half-cycle, however, does not match the assumed immediate ligand loss through reaction with surface hydroxyls. One would expect an immediate loss of ligands, indicated by a Hf:N ratio of approximately 1:3 as TDMAHf deposits onto the surface; however, a Hf:N ratio of 1:3.6 is observed. The partial hydroxylation on the Si(111) surface leads to binding through the TDMAHf ligand N atoms resulting in both N and CH 3 being found remaining on the surface post water half-cycle. Although there is evidence of ligand exchange reactions occurring at Si–OH sites, it also seems that N binding can occur on bare Si, highlighting the complexity of the substrate/precursor reaction even when hydroxyls are present. Moreover, the initial low coverage of Si–OH/Si–H appears to severely limit the amount of Hf deposited, which we hypothesize is due to the specific geometry of the initial arrangement of Si–OH/Si–H on the rest- and adatoms.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Benchmarking large language models for materials synthesis: The case of atomic layer deposition

In this work, we introduce an open-ended question benchmark, ALDbench, to evaluate the performance of large language models (LLMs) in materials synthesis, and, in particular, in the field of atomic layer deposition, a thin film growth technique used in energy applications and microelectronics. Our benchmark comprises questions with a level of difficulty ranging from the graduate level to domain expert current with the state of the art in the field. Human experts reviewed the questions along the criteria of difficulty and specificity, and the model responses along four different criteria: overall quality, specificity, relevance, and accuracy. We ran this benchmark on an instance of OpenAI’s GPT-4o. The responses from the model received a composite quality score of 3.7 on a 1–5 scale, consistent with a passing grade. However, 36% of the questions received at least one below average score. An in-depth analysis of the responses identified at least five instances of suspected hallucination. Finally, we observed statistically significant correlations between the difficulty of the question and the quality of the response, the difficulty of the question and the relevance of the response, the specificity of the question, and the accuracy of the response as graded by the human experts. Furthermore, this emphasizes the need to evaluate LLMs across multiple criteria beyond difficulty or accuracy.

Artificial intelligence↗
DOE OSTI2025

Operando XPS in reactive plasmas: The importance of the wall reactions

In this article, advancements in differential pumping and electron optics over the past few decades have enabled x-ray photoelectron spectroscopy (XPS) measurements at (near-)ambient pressures, bridging the pressure gap for characterizing realistic sample chemistries. Recently, we have demonstrated the capabilities of an ambient pressure XPS setup for in situ plasma environment measurements, allowing plasma-surface interactions to be studied in operando rather than using the traditional before-and-after analysis approach. This new “plasma-XPS” technique facilitates the identification of reaction intermediates critical for understanding plasma-assisted surface processes relevant to semiconductor nanomanufacturing, such as physical vapor deposition, etching, atomic layer deposition, and many other plasma applications. In this paper, we apply the plasma-XPS approach to monitor real-time surface chemical changes on a model Ag(111) single crystal exposed to oxidizing and reducing plasmas. We correlate surface-sensitive data with concurrent gas-phase XPS measurements and residual gas mass-spectrum analysis of species generated during plasma exposure, highlighting the significant role of plasma-induced chamber wall reactions. Ultimately, we demonstrate that plasma-XPS provides comprehensive insights into both surface and gas-phase chemistry, establishing it as a versatile and dynamic characterization tool with broad applications in microelectronics research. Finally, we outline potential enhancements and future metrology directions to advance plasma-XPS investigations further.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Photothermal alternative to device fabrication using atomic precision advanced manufacturing techniques

The attachment of dopant precursor molecules to depassivated areas of hydrogen-terminated silicon templated with a scanning tunneling microscope (STM) has been used to create electronic devices with subnanometer precision, typically for quantum physics experiments. This process, which we call atomic precision advanced manufacturing (APAM), dopes silicon beyond the solid-solubility limit and produces electrical and optical characteristics that may also be useful for microelectronic and plasmonic applications. However, scanned probe lithography lacks the throughput required to develop more sophisticated applications. In this work, we demonstrate and characterize an APAM device workflow where scanned probe lithography of the atomic layer resist has been replaced by photolithography. An ultraviolet laser is shown to locally and controllably heat silicon above the temperature required for hydrogen depassivation on a nanosecond timescale, a process resistant to under- and overexposure. STM images indicate a narrow range of energy density where the surface is both depassivated and undamaged. Modeling that accounts for photothermal heating and the subsequent hydrogen desorption kinetics suggests that the silicon surface temperatures reached in our patterning process exceed those required for hydrogen removal in temperature-programmed desorption experiments. A phosphorus-doped van der Pauw structure made by sequentially photodepassivating a predefined area and then exposing it to phosphine is found to have a similar mobility and higher carrier density compared with devices patterned by STM. Lastly, it is also demonstrated that photodepassivation and precursor exposure steps may be performed concomitantly, a potential route to enabling APAM outside of ultrahigh vacuum.

nanoscale devices↗
DOE OSTI2020

Photothermal alternative to device fabrication using atomic precision advanced manufacturing techniques

The attachment of dopant precursor molecules to depassivated areas of hydrogen-terminated silicon templated with a scanning tunneling microscope (STM) has been used to create electronic devices with sub-nanometer precision, typically for quantum physics demonstrations, and to dope silicon past the solid-solubility limit, with potential applications in microelectronics and plasmonics. However, this process, which we call atomic precision advanced manufacturing (APAM), currently lacks the throughput required to develop sophisticated applications because there is no proven scalable hydrogen lithography pathway. Here, we demonstrate and characterize an APAM device workflow where STM lithography has been replaced with photolithography. An ultraviolet laser is shown to locally heat silicon controllably above the temperature required for hydrogen depassivation. STM images indicate a narrow range of laser energy density where hydrogen has been depassivated, and the surface remains well-ordered. A model for photothermal heating of silicon predicts a local temperature which is consistent with atomic-scale STM images of the photo-patterned regions. Finally, a simple device made by exposing photo-depassivated silicon to phosphine is found to have a carrier density and mobility similar to that produced by similar devices patterned by STM.

42 ENGINEERING↗
DOE OSTI2020

Ultrahigh areal number density solid-state on-chip microsupercapacitors via electrohydrodynamic jet printing

Microsupercapacitors (MSCs) have garnered considerable attention as a promising power source for microelectronics and miniaturized portable/wearable devices. However, their practical application has been hindered by the manufacturing complexity and dimensional limits. Here, we develop a new class of ultrahigh areal number density solid-state MSCs (UHD SS–MSCs) on a chip via electrohydrodynamic (EHD) jet printing. This is, to the best of our knowledge, the first study to exploit EHD jet printing in the MSCs. The activated carbon-based electrode inks are EHD jet-printed, creating interdigitated electrodes with fine feature sizes. Subsequently, a drying-free, ultraviolet-cured solid-state gel electrolyte is introduced to ensure electrochemical isolation between the SS–MSCs, enabling dense SS–MSC integration with on-demand (in-series/in-parallel) cell connection on a chip. The resulting on-chip UHD SS–MSCs exhibit exceptional areal number density [36 unit cells integrated on a chip (area = 8.0 mm x 8.2 mm), 54.9 cells cm -2 ] and areal operating voltage (65.9 V cm -2 ).

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Ultimate Suppression of Thermal Transport in Amorphous Silicon Nitride by Phononic Nanostructure.

Engineering the thermal conductivity of amorphous materials is highly essential for the thermal management of future electronic devices. Here, we demonstrate the impact of ultrafine nanostructuring on the thermal conductivity reduction of amorphous silicon nitride (a-Si3N4) thin films, in which the thermal transport is inherently impeded by the atomic disorders. Ultrafine nanostructuring with feature sizes below 20 nm allows us to fully suppress contribution of the propagating vibrational modes (propagons), leaving only the diffusive vibrational modes (diffusons) to contribute to thermal transport in a-Si3N4. A combination of the phonon-gas kinetics model and the Allen-Feldmann theory reproduced the measured results without any fitting parameters. The thermal conductivity reduction was explained as extremely strong diffusive boundary scattering of both propagons and diffusIons. These findings give rise to substantial tunability of thermal conductivity of amorphous materials, which enables us to provide better thermal solutions in microelectronic devices.

Tambo, Naoki↗