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At least 451 records · Page 25

Dithieno[3,2-c:3′,2′‑ h ][2,6]naphthyridine-4,9(5H,10H)-dione-Based Conjugated Polymers for High Stable n‑Type Organic Electrochemical Transistors

Amide/imide-based conjugated polymers have been utilized as n-type OECT materials and have demonstrated promising device performance. However, their performance remains insufficient in terms of both efficiency and stability, which limits their practical applications. The development of conjugated polymers based on amide and imide groups represents a promising approach to address this issue. Here, in this study, we introduced dithieno­[3,2-c:3′,2′-h]­[2,6]­naphthyridine-4,9­(5H,10H)-dione (TVTDA) into the design of the OECT materials for the first time. By copolymerizing it with (E)-2,2′-(ethene-1,2-diyl)­bis­(thiophene-3-carbonitrile), we prepared two polymers, TVTDA-2CNTVT-ST and TVTDA-2CNTVT-BR, which contain linear or branched ethylene glycol side chains, respectively. OECT devices based on these polymers demonstrate n-type charge transport characteristics, achieving promising μC* values of 7.17 and 26.5 F cm –1 V –1 s –1 for TVTDA-2CNTVT-ST and TVTDA-2CNTVT-BR, respectively. The higher electron mobility and μC* of TVTDA-2CNTVT-BR can be attributed to its mixed edge-on and face-on stacking mode, larger crystalline coherence length, and larger domain size in the thin film. To our delight, the OECT devices based on both polymers exhibit good operational stability after operating in an aqueous solution for 2000 s, with current retention rates exceeding 93%, representing the high level among the OECT devices based on amide/imide-conjugated polymers. Our study demonstrates that the TVTDA unit holds great potential for constructing high-performance n-type OECT materials.

36 MATERIALS SCIENCE↗

Materials processing in space

Prospects for materials processing in space are addressed. The types of materials that are of the most commercial interest in this regard are examined, and the relevant microgravity facilities and technologies are discussed. The characteristics of the Space Shuttle and the Free Flyer with regard to materials processing in space are briefly considered. The principal manufacturers and consumers of space-processed products are described. The potential impact of these products is assessed.

Kohli, Rajiv↗

Flat-plate solar array project process development area, process research of non-CZ silicon material

The program is designed to investigate the fabrication of solar cells on N-type base material by a simultaneous diffusion of N-type and P-type dopants to form an P(+)NN(+) structure. The results of simultaneous diffusion experiments are being compared to cells fabricated using sequential diffusion of dopants into N-base material in the same resistivity range. The process used for the fabrication of the simultaneously diffused P(+)NN(+) cells follows the standard Westinghouse baseline sequence for P-base material except that the two diffusion processes (boron and phosphorus) are replaced by a single diffusion step. All experiments are carried out on N-type dendritic web grown in the Westinghouse pre-pilot facility. The resistivities vary from 0.5 (UC OMEGA)cm to 5 (UC OMEGA)cm. The dopant sources used for both the simultaneous and sequential diffusion experiments are commercial metallorganic solutions with phosphorus or boron components. After these liquids are applied to the web surface, they are baked to form a hard glass which acts as a diffusion source at elevated temperatures. In experiments performed thus far, cells produced in sequential diffusion tests have properties essentially equal to the baseline N(+)PP(+) cells. However, the simultaneous diffusions have produced cells with much lower IV characteristics mainly due to cross-doping of the sources at the diffusion temperature. This cross-doping is due to the high vapor pressure phosphorus (applied as a metallorganic to the back surface) diffusion through the SiO2 mask and then acting as a diffusant source for the front surface.

Campbell, R. B.↗

Spin-Triplet Pairing State Evidenced by Half-Quantum Flux in a Noncentrosymmetric Superconductor

Building future fault-tolerant quantum computers may rely on a basic but so far elusive building-block-type of materials, superconductors with spin-triplet pairing, which were considered to be very rare. Now physicists demonstrate that they can be found in materials with low symmetry, different from most common crystalline materials. The new finding focuses on a particular type of crystals, the structure of which does not have inversion symmetry. For more than a decade, this material class (noncentrosymmetric superconductor) has been inferred to be a potential rich mine of spin-triplet superconductors. It is conceived that the spin-triplet pairing is promised by the broken inversion symmetry, however key experimental evidences remain lacking. Xu et al. applied a newly developed method to examine a prototype noncentrosymmetric superconductor, α-BiPd. Their experiment reveals the presence of the highly unusual half-integer quantization of magnetic flux in polycrystalline rings of α-BiPd, which is a smoking-gun evidence for spin-triplet pairing. This new finding ignites hopes that spin-triplet pairing may be a common presence among the dozens of known noncentrosymmetric superconductors as theoretically expected, which can now be unambiguously identified by the unique phenomenon of half-quantum magnetic flux.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Apparatuses and methods involving thermally tuned composite material

An apparatus includes a substrate, at least one type of tuning material, and a composite material. The substrate has an interface surface or material that manifests, in response to light in a color spectrum, a particular color and a first thermal load. The particular color is associated with the first thermal load. The at least one type of tuning material manifests, in response to light in the color spectrum, the particular color and a second thermal load. The particular color is associated with the second thermal load. The first thermal load is different from the second thermal load. The composite material includes the interface surface or material and the at least one type of tuning material. The composite material manifests, in response to light in the color spectrum, the particular color and a tuned thermal load which is different than the first thermal load and the second thermal load.

Li, Wei↗

Semiconducting Small Molecules as Active Materials for p-Type Accumulation Mode Organic Electrochemical Transistors

A series of semiconducting small molecules with bithiophene or bis-3,4-ethylenedioxythiophene cores are designed and synthesized. The molecules display stable reversible oxidation in solution and can be reversibly oxidized in the solid state with aqueous electrolyte when functionalized with polar triethylene glycol side chains. Evidence of promising ion injection properties observed with cyclic voltammetry is complemented by strong electrochromism probed by spectroelectrochemistry. Blending these molecules with high molecular weight polyethylene oxide (PEO) is found to improve both ion injection and thin film stability. The molecules and their corresponding PEO blends are investigated as active layers in organic electrochemical transistors (OECTs). For the most promising molecule:polymer blend (P4E4:PEO), p-type accumulation mode OECTs with µA drain currents, μS peak transconductances, and a µC* figure-of-merit value of 0.81 F V -1 cm -1 s -1 are obtained.

36 MATERIALS SCIENCE↗

Computational Fermi Level Engineering and Doping-Type Conversion of Ga2O3 Via Three-Step Processing

Ga2O3 is being actively explored for power electronics, deep-ultraviolet optoelectronics, and other applications due to its ultra-wide bandgap and low projected fabrication cost of large-size and high-quality crystals. N-type doping of Ga2O3 can be achieved and tuned, but p-type doping faces fundamental obstacles due to deep character of acceptor levels and polaron transport of resulting holes. However, successful engineering of Ga2O3 based devices requires critical control of doping density, Fermi level position, and free carrier concentration, providing opportunities for predictive process simulation. We use first-principles defect theory and defect equilibrium calculations to simulate a 3-step growth-annealing-quench protocol for hydrogen assisted Mg doping in Ga2O3, taking into account the hydrogen-oxygen-water gas phase equilibrium. We predict type conversion to a net p-type regime following O-rich annealing after growth under reducing conditions in the presence of H2. This process is similar to the Mg acceptor activation by H removal in GaN. We show that there is an optimal temperature that maximizes the net acceptor density during the equilibrium annealing step for a given Mg doping level. Quenching of non-equilibrium annealed samples then results in a Fermi level EF below mid-gap down to about EV +1.5 eV, creating a significant number of uncompensated neutral MgGa0 acceptors. The resulting free hole concentration in quenched samples is very low (109 – 1012 cm-3) due to deep energy level of these Mg acceptors, but this type converted Ga2O3 material can create a significant built-in field in a p-n junction with an adjoining n-type material. Additionally, the electron concentration is greatly suppressed in such acceptor-doped Ga2O3, which could enable the use as a current blocking layer to fabricate normally-off (enhancement-mode) vertical Ga2O3 based metal-oxide-semiconductor field effect transistors (MOSFETs), and as a guard ring for edge termination in MOSFETs and Schottky barrier diodes (SBDs) with increased breakdown voltage.

CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS,M↗

Synthesis of ZnO:As Films Using Off-Axis Sputtering Deposition

As a novel oxide semiconductor material, ZnO is interesting for use in many applications. For fabricating electronic devices, it is important to have n- and p- type ZnO materials. Arsenic has been proven to be one of the p-type dopants for ZnO materials. However, information in studying the ZnAsO ternary compound films has been scarce. In order to investigate the morphology, structure and electrical properties of ZnAsO ternary compounds, ZnO:As films have been synthesized using off-axis sputtering deposition on various substrates including (100) Si and (0001) sapphire crystals. Films are grown under various growth conditions. ZnO:As targets with the atomic weight ratios of arsenic to zinc from 0.01 to 0.10 are used for film synthesis. The growth temperatures and pressures range from 350 to 550C and 5 to 150 mTorr, respectively. Argon to oxygen gas ratio for film growth is varied to examine the film quality as well. Film surface morphology, crystal structure, and compositions, are characterized using atomic force microscopy, x-ray diffraction, and energy dispersive spectroscopy, respectively. The compositions of target material and ZnO:As films grown under various conditions are then assessed. The electrical properties were also measured. The detail of these measurements will be discussed in the presentation.

Zhu, Shen↗

Lunar material resources: An overview

The analysis of returned lunar samples and a comparison of the physical and chemical processes operating on the Moon and on the Earth provide a basis for predicting both the possible types of material resources (especially minerals and rocks) and the physical characteristics of ore deposits potentially available on the Moon. The lack of free water on the Moon eliminates the classes of ore deposits that are most exploitable on Earth; namely, (1) hydrothermal, (2) secondary mobilization and enrichment, (3) precipitation from a body of water, and (4) placer. The types of lunar materials available for exploitation are whole rocks and their contained minerals, regolith, fumarolic and vapor deposits, and nonlunar materials, including solar wind implantations. Early exploitation of lunar material resources will be primarily the use of regolith materials for bulk shielding; the extraction from regolith fines of igneous minerals such as plagioclase feldspars and ilmenite for the production of oxygen, structural metals, and water; and possibly the separation from regolith fines of solar-wind-implanted volatiles. The only element, compound, or mineral, that by itself has been identified as having the economic potential for mining, processing, and return to Earth is helium-3.

Carter, James L.↗

Law and politics in outer space: A bibliography.

The materials are categorized by specific topics and by types of materials. The sources are books, articles, reports, United Nations materials, U.S. Government documents, etc. Books are listed by geographical areas, and articles are divided into what are considered to be the major space topics. Book and article sections are also divided into English and foreign language entries. A bibliographical essay introduces the literature to those unacquainted with law and politics of outer space.

White, I. L.↗

Io - Geochemistry of sulfur

The evidence from Voyager imaging, Earth-based spectral reflectivity studies, and thermal emission measurements combine to suggest an extremely fresh, volcanically recycled sulfur-rich crust for Io, with very shallow large-scale melting. Two present styles of volcanism are possible, depending on the thickness of local deposits of sulfur: shallow liquid sulfur magma generation with quiescent flooding, and high-temperature volcanism with violet eruption of a sulfur-iron magma driven by SO2. Evolutionary considerations preclude direct derivation of Io's lithosphere from any metal-bearing chondritic source material. Metal-free C3V- or C2M-type parent material of either primary or secondary origin is the most plausible direct antecedent of the present sulfur-rich crust. Sulfates are almost certainly important constituents of the mantle, and can participate in the recycling of reduced, dense sulfide species to prevent total extraction of sulfur into the core.

Lewis, J. S.↗

Petrology of types 4-6 carbonaceous chondrites

A comparative mineralogic study has been made of Coolidge, Karoonda, and new C4 chondrites in order to clarify the origin of C4-6 chondrites. It is shown that the properties of all C4-6 chondrites are consistent with an origin by metamorphism of C3-like precursors by processes analogous to those operating in ordinary chondrite parent bodies or planetesimals. However, type 4-6 material was not well mixed with type 3 material in the CV3 parent body. It is concluded that C4-6 chondrites may come from one or more separate parent bodies.

Scott, E. R. D.↗

Properties of Extruded PS-212 Type Self-Lubricating Materials

Research has been underway at the NASA Lewis Research Center since the 1960's to develop high temperature, self-lubricating materials. The bulk of the research has been done in-house by a team of researchers from the Materials Division. A series of self-lubricating solid material systems has been developed over the years. One of the most promising is the composite material system referred to as PS-212 or PM-212. This material is a powder metallurgy product composed of metal bonded chromium carbide and two solid lubricating materials known to be self-lubricating over a wide temperature range. NASA feels this material has a wide potential in industrial applications. Simplified processing of this material would enhance its commercial potential. Processing changes have the potential to reduce processing costs, but tribological and physical properties must not be adversely affected. Extrusion processing has been employed in this investigation as a consolidation process for PM-212/PS-212. It has been successful in that high density bars of EX-212 (extruded PM-212) can readily be fabricated. Friction and strength data indicate these properties have been maintained or improved over the P.M. version. A range of extrusion temperatures have been investigated and tensile, friction, wear, and microstructural data have been obtained. Results indicate extrusion temperatures are not critical from a densification standpoint, but other properties are temperature dependent.

Waters, W. J.↗

Wholly Aromatic Ether-imides. Potential Materials for n-Type Semiconductors

We report on the synthesis and characterization of a novel series low-molar-mass ether-imide rod-shaped model compounds. All ether-imides were obtained by terminating the appropriate rigid core dianhydride, i.e. pyromellitic dianhydride (PMDA), 1,4,5,8-naphthalenetetracarboxylic dianhydride (NDA), 3,3',4,4'-biphenyltetracarboxylic dianhydride (BPDA), and 3,3,4,4'-oxydiphthalic dianhydride (ODPA) with three flexible aryl-ether tails of different chain length. The mono-functional aryl-ether amines, i.e. 4-(3-phenoxy-phenoxy)-phenylamine (2) and 4-(3-phenoxy-3-phenoxy-phenoxy)-phenylamine (4), were synthesized using standard fluoro-displacement and Ullmann condensation techniques. The corresponding ether-imide model compounds were obtained in high yields using a one-step solution imidization procedure. Increasing the number of meta-substituted aryl-ether units reduces the melt transition temperatures and at the same time it increases the solubility of the model compounds. Most model compounds are crystalline solids and form isotropic melts upon heating. 2,7-Bis-(-4-phenoxy-phenyl)-benzo[Imn][3,8]phenanthroline1,3,6,8-tetraone (NDA-n0), however, displays a smectic A (SA) when cooled from the isotropic phase, followed by what appears to be either a highly ordered smectic phase or a, columnar phase. This is the first example, known to date, in which a mesophase is detected in a wholly aromatic ether-imide compound. For all compounds we present spectroscopic data and X-ray diffraction data. Cyclic voltammetry was used to determine the redox behavior and pertinent energy levels of the model compounds.

Dingemans, Theo J.↗

Meteoritic material on the moon.

Three types of meteoritic material are found on the moon: micrometeorites, ancient planetesimal debris from the 'early intense bombardment,' and debris of recent, crater-forming projectiles. Their amounts and compositions have been determined from trace element studies. The micrometeorite component is uniformly distributed over the entire lunar surface, but is seen most clearly in mare soils. It has a primitive, Cl-chondrite-like composition, and comprises 1-1.5% of mature soils. The ancient component is seen in highland breccias and soils more than 3.9 AE old. It has a fractionated composition, with volatiles depleted relative to siderophiles. The abundance pattern does not match that of any known meteorite class. The crater-forming component has remained elusive. Only a possible hint of this component has been seen, in ejecta from Dune Crater and Apollo 12 KREEP glasses of possibly Copernican origin.

Anders, E.↗

Meteoritic material on the moon

Three types of meteoritic material are found on the moon: micrometeorites, ancient planetesimal debris from the "early intense bombardment," and debris of recent, craterforming projectiles. Their amounts and compositions have been determined from trace element studies. The micrometeorite component is uniformly distributed over the entire lunar surface, but is seen most clearly in mare soils. It has a primitive, C1-chondrite-like composition, and comprises 1 to 1.5 percent of mature soils. Apparently it represents cometary debris. The ancient component is seen in highland breccias and soils. Six varieties have been recognized, differing in their proportions of refractories (Ir, Re), volatiles (Ge, Sb), and Au. All have a fractionated composition, with volatiles depleted relative to siderophiles. The abundance patterns do not match those of the known meteorite classes. These ancient meteoritic components seem to represent the debris of an extinct population of bodies (planetisimals, moonlets) that produced the mare basins during the first 700 Myr of the moon's history. On the basis of their stratigraphy and geographic distribution, five of the six groups are tentatively assigned to specific mare basins: Imbrium, Serenitatis, Crisium, Nectaris, and Humorum or Nubium.

Morgan, J. W.↗

In-Situ Growth of Yb2O3 Layer for Sublimation Suppression for Yb14MnSb11 Thermoelectric Material for Space Power Applications

The compound Yb14MnSb11 is a p-type thermoelectric material of interest to the National Aeronautics and Space Administration (NASA) as a candidate replacement for the state-of-the-art Si-Ge used in current radioisotope thermoelectric generators (RTGs). Ideally, the hot end of this leg would operate at 1000 C in the vacuum of space. Although Yb14MnSb11 shows the potential to double the value of the thermoelectric figure of merit (zT) over that of Si-Ge at 1000 C, it suffers from a high sublimation rate at elevated temperatures and would require a coating in order to survive the required RTG lifetime of 14 years. The purpose of the present work is to measure the sublimation rate of Yb14MnSb11 and to investigate sublimation suppression for this material. This paper reports on the sublimation rate of Yb14MnSb11 at 1000 C (approximately 3 x 10(exp -3) grams per square centimeter hour) and efforts to reduce the sublimation rate with an in situ grown Yb2O3 layer. Despite the success in forming thin, dense, continuous, and adherent oxide scales on Yb14MnSb11, the scales did not prove to be sublimation barriers.

Nesbitt, James A.↗