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At least 451 records · Page 25

Conservation Voltage Reduction with Distributed Energy Resource Management System, Grid-Edge, and Legacy Devices

Distribution utilities use conservation voltage reduction (CVR) to obtain energy savings and lower peak demand by reducing bus voltages. Traditionally, the CVR is accomplished by controlling the legacy assets such as load tap changers, voltage regulators, and capacitor banks. The deployment of the advanced distribution management system (ADMS) and distributed energy resource management system (DERMS) enables the integration of distributed energy resources into the distribution networks and provide the grid services including CVR. This paper studies the coordinated operation of an ADMS and a DERMS in achieving CVR and voltage regulation. A commercial ADMS uses legacy devices and Edge-of-Network Grid Optimization (ENGO) devices to obtain energy savings through CVR. A prototype DERMS dispatches the photovoltaic smart inverters based on real-time optimal power low to ensure voltage regulation across the feeder. The results show that the coordinated operation of ADMS and DERMS is effective in achieving CVR and voltage regulation. Specifically, energy savings of up to 4.7% are observed in the real utility distribution system used in this study.

advanced distribution management system↗

Conservation Voltage Reduction with Distributed Energy Resource Management System, Grid-Edge, and Legacy Devices

Distribution utilities use conservation voltage reduction (CVR) to obtain energy savings and lower peak demand by reducing bus voltages. Traditionally, the CVR is accomplished by controlling the legacy assets such as load tap changers, voltage regulators, and capacitor banks. The deployment of the advanced distribution management system (ADMS) and distributed energy resource management system (DERMS) enables the integration of distributed energy resources into the distribution networks and provide the grid services including CVR. This paper studies the coordinated operation of an ADMS and a DERMS in achieving CVR and voltage regulation. A commercial ADMS uses legacy devices and Edge-of-Network Grid Optimization (ENGO) devices to obtain energy savings through CVR. A prototype DERMS dispatches the photovoltaic smart inverters based on real-time optimal power low to ensure voltage regulation across the feeder. The results show that the coordinated operation of ADMS and DERMS is effective in achieving CVR and voltage regulation. Specifically, energy savings of up to 4.7% are observed in the real utility distribution system used in this study.

advanced distribution management system↗

Modified Virtual Oscillator-Based Operation of Grid-Forming Converters with Single Voltage Sensor: Preprint

This paper proposes a virtual oscillator-based control architecture for a grid-forming converter with an inner current control loop. In general, the virtual oscillator is based on a Lienard type of oscillator equation with a cubic nonlinearity. A virtual oscillator alone cannot accommodate unbalanced or harmonic mitigation while operating converters in grid-forming mode. Therefore, to accomplish better tracking performance, incorporating the provision for nonlinear and/or unbalanced loads, an inner current control loop is utilized that is based on the Lyapunov energy function type control architecture. To reduce the overall cost of implementation and ensure proper phase difference in the generated voltages, the implemented virtual oscillator operates with only one voltage feedback from the point of common coupling. To verify the effectiveness of the proposed approach, the overall system has been modeled in MATTLAB/Simulink and PLECS domain. This paper also presents case studies showing the successful production of low harmonic load voltages under nonideal loading conditions, along with other important results.

dual second order generalized integrator↗

High Dynamic Voltage Range Studies of Piezoelectric Multilayer Actuators at Low Temperatures

Piezo actuators are used for resonance control in superconducting linacs. In high accelerating gradients linacs, such as those operated in a pulsed mode, the piezos require a large operating voltage. This is due to the Lorentz forced detuning which causes a large frequency shift and is compensated with an active piezo-tuning system. In this high dynamic voltage range the piezo is expected to warm up drastically due to it being in an insulated vacuum. This study characterizes the dielectric properties (capacitance, dielectric losses), the piezo stroke (from geophone), and thermal properties such as heating. Results obtained in the temperature range of 20K to 300K will be presented and discussed.

43 PARTICLE ACCELERATORS↗

Modified Virtual Oscillator Based Operation of Grid Forming Converters with Single Voltage Sensor

Virtual oscillator based control architecture for grid forming converter with inner current control loop for additional objective accomplishments is proposed in this paper. In general, virtual oscillator is based on Lienard type of oscillator equation with a cubic nonlinearity. Virtual oscillator alone cannot accommodate unbalanced or harmonic mitigation while operating converters in grid forming mode. Therefore, to accomplish better tracking performance, incorporating the provision for nonlinear and/or unbalanced loads, an inner current control loop is utilized which is based upon Lyapunov energy function type control architecture due to its advantages. To reduce the overall cost of implementation and ensure proper phase difference in the generated voltages, the implemented virtual oscillator operates with only one voltage feedback from the point of common coupling as presented in this paper. To verify the effectiveness of the proposed approach, the overall system has been modeled in MATTLAB/Simulink and PLECS domain and case studies showing the successful production of low harmonic load voltages under nonideal loading condition along with other important results are presented in this paper.

dual second order generalized integrator↗

Voltage control of magnetism in Fe3-xGeTe2/In2Se3 van der Waals ferromagnetic/ferroelectric heterostructures

Abstract We investigate the voltage control of magnetism in a van der Waals (vdW) heterostructure device consisting of two distinct vdW materials, the ferromagnetic Fe 3- x GeTe 2 and the ferroelectric In 2 Se 3 . It is observed that gate voltages applied to the Fe 3- x GeTe 2 /In 2 Se 3 heterostructure device modulate the magnetic properties of Fe 3- x GeTe 2 with significant decrease in coercive field for both positive and negative voltages. Raman spectroscopy on the heterostructure device shows voltage-dependent increase in the in-plane In 2 Se 3 and Fe 3- x GeTe 2 lattice constants for both voltage polarities. Thus, the voltage-dependent decrease in the Fe 3- x GeTe 2 coercive field, regardless of the gate voltage polarity, can be attributed to the presence of in-plane tensile strain. This is supported by density functional theory calculations showing tensile-strain-induced reduction of the magnetocrystalline anisotropy, which in turn decreases the coercive field. Our results demonstrate an effective method to realize low-power voltage-controlled vdW spintronic devices utilizing the magnetoelectric effect in vdW ferromagnetic/ferroelectric heterostructures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Increasing Multilayer Ceramic Capacitor Lifetime With Bipolar Voltage Cycling

Enhancing the lifetime of multilayer ceramic capacitors (MLCCs) is critical in many aerospace, naval, or electrical grid applications, where device failure could lead to catastrophic consequences. The migration of oxygen vacancies from the ceramic to the electrode interface under constant bias is known to reduce the lifetime of oxide-based MLCCs. Bias cycling presents an opportunity to enhance MLCC lifetime by reducing oxygen vacancy migration. The ideal frequency range is expected to lie between frequencies low enough to avoid self-heating but high enough to avoid interfacial defect formation. However, the impact of low-frequency bipolar voltage cycling (BVC) on MLCC degradation mechanisms has not been well studied. This work investigates the impact of periodic BVC on the degradation of MLCCs through highly accelerated lifetime testing (HALT) on X7R capacitors. HALT tests were conducted at 255 °C and 60 V using different switching frequencies: 0 (dc), 0.1, 2.5, and 10 Hz. BVC was found to improve the lifetime of MLCCs compared to dc test conditions. MLCCs tested at 10-Hz BVC showed a 311% increase in average time to failure compared to the dc case. Impedance spectroscopy shows that BVC decreases the rate of resistance degradation within MLCCs, indicating that oxygen vacancy migration to the electrodes is mitigated. The impedance spectra taken on BVC samples highlight how grain boundaries play a vital role in trapping oxygen vacancies. Periodic cycling causes oxygen vacancies to become trapped at grain boundaries, resulting in oxygen vacancies taking longer to reach the electrode interface and thus increasing MLCC lifetime. This work highlights not only how BVC can be used to increase MLCC lifetime but also how periodically cycling MLCCs could increase lifetime in extreme environments, such as at elevated temperatures and electric fields.

Chuong, Kayla Y.↗

Hybrid BaTiO 3 /SiN x /AlGaN/GaN lateral Schottky barrier diodes with low turn-on and high breakdown performance

In this Letter, we demonstrate hybrid GaN lateral Schottky barrier diodes with enhanced breakdown characteristics and a low turn-on voltage. These diodes incorporate a lateral Schottky barrier in combination with a high permittivity material beneath the field plate, enabling high average breakdown fields and a low turn-on voltage. Average electric fields up to 2.38 MV/cm were achieved for devices with an anode–cathode spacing of 4 μm, while maintaining with a turn-on voltage of 0.48 V. In contrast, SiN x /AlGaN/GaN control lateral Schottky diodes displayed an average breakdown field of ~0.7 MV/cm for devices with similar dimensions with a turn-on voltage of 0.46 V. The use of a high-permittivity dielectric can more effectively utilize the high breakdown fields in wide bandgap materials by proper management of the electric field. This demonstration provides an innovative way to integrate high-permittivity materials with GaN lateral devices for improved breakdown and resistance characteristics.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Optically thick GaInAs/GaAsP strain-balanced quantum-well tandem solar cells with 29.2% efficiency under the AM0 space spectrum

GaAs is often used as a multijunction subcell due to its high material quality on GaAs substrates, despite having a non-optimal bandgap. The bandgap can be beneficially reduced using many layers of thin, strain-balanced GaInAs in a superlattice or quantum well device, but achieving excellent carrier collection without increased recombination has proven challenging. Here, we develop and demonstrate high performance, optically thick GaInAs/GaAsP strain-balanced solar cells. Excellent material quality is achieved in thick superlattices by using growth conditions that limit progressive thickness and composition fluctuations. Bandgap-voltage offsets as low as 0.31V are shown in superlattice cells using thin, highly strained GaP barriers. Optically thick superlattice cells with over 2500 nm of total GaInAs in the depletion region are developed, enabling 3.8 mA/cm 2 of extra photocurrent beyond the GaAs band edge under the AM0 space spectrum. Optimized superlattice solar cells are incorporated into two-junction devices that achieve 29.2% efficiency under the AM0 space spectrum due to their improved bandgap combination and high subcell voltages.

14 SOLAR ENERGY↗

Calcium-Doped High-Voltage Spinel Cathode for Long Cycle Life Lithium-Ion Batteries

With the promises of low cost, high operating voltage, and excellent rate capability, the high-voltage spinel material with the formula of LiNi 0.5 Mn 1.5 O 4 (LNMO) has been considered as one of the most promising cathode materials for nextgeneration lithium-ion batteries (LIBs). However, the adoption of LNMO into practical LIBs is greatly hindered due to its rapid capacity decay associated with its bulk structural instability and interfacial side reactions. To address these issues, we proposed to use the cost-effective calcium (Ca) element as a dopant to stabilize the oxygen framework and surface of the LNMO crystal. The experimental results showed that, with moderate Ca doping, the obtained cathode (Ca 0.05 LNMO) retained a specific capacity of ∼121 mAh/g (∼94.4% capacity retention) after 500 cycles at 0.5 C, compared to ∼73% for the baseline bare sample. Furthermore, the Ca 0.05 LNMO cathode retained ∼84% of its initial capacity, vs the baseline with ∼69%, after 150 cycles at the high temperature of 55 °C. The excellent battery performance of the moderately Ca-doped LNMO cathode is ascribed to its structural and kinetic advantages.

25 ENERGY STORAGE↗

Tuning Organic Electrochemical Transistor Threshold Voltage using Chemically Doped Polymer Gates

Organic electrochemical transistors (OECTs) have shown promise as transducers and amplifiers of minute electronic potentials due to their large transconductances. Tuning the OECT threshold voltage is important to achieve low-powered devices with amplification properties within the desired operational voltage range. However, traditional design approaches have struggled to decouple channel and materials properties from threshold voltage, thereby compromising on several other OECT performance metrics, such as electrochemical stability, transconductance, and dynamic range. In this work, simple solution-processing methods are utilized to chemically dope polymer gate electrodes, thereby controlling their work function, which in turn tunes the operation voltage range of the OECTs without perturbing their channel properties. Chemical doping of initially air-sensitive polymer electrodes further improves their electrochemical stability in ambient conditions. Thus, OECTs that are simultaneously low-powered and electrochemically resistant to oxidative side reactions under ambient conditions are demonstrated. Furthermore, this approach shows that threshold voltage, which is once interwoven with other OECT properties, can in fact be an independent design parameter, expanding the design space of OECTs.

chemical doping↗

Dynamic control of molecular transport MXene transistor membranes

Controlled spatial confinement and surface properties of lamellar 2D nanomaterial membranes could enhance many precision separation processes. Traditionally, researchers view channel dimensions, surface properties, and permeation rates of these membranes as intrinsic properties that cannot be modulated in operando. We report that gate voltage applied to the conducting laminar MXene membrane can modulate the permeation rate of ions and neutral solutes, as well as its effective size rejection. In operando wide-angle x-ray scattering measurements reveal that these changes are not driven by electrically induced variations in the d spacing of the MXene layers. Instead, experimental data and continuum electrokinetic modeling reveal that ion transport through the MXene channels is primarily affected by Donnan equilibrium at the membrane-solution interface. We also report a strong increase in the permeation rates through the membrane under a low-frequency ac voltage gating regime that we attribute to diffusioosmotic flow oscillations induced in the membrane. Overall, MXene “transistor” membranes provide a previously unidentified approach to dynamic control of molecular separations.

Pendse, Aaditya [Lawrence Livermore National Labor↗

Leveraging Cell Expansion Sensing in State of Charge Estimation: Practical Considerations

Measurements such as current and terminal voltage that are typically used to determine the battery’s state of charge (SOC) are augmented with measured force associated with electrode expansion as the lithium intercalates in its structure. The combination of the sensed behavior is shown to improve SOC estimation even for the lithium ion iron phosphate (LFP) chemistry, where the voltage–SOC relation is flat (low slope) making SOC estimation using measured voltage difficult. For the LFP cells, the measured force has a non-monotonic F–SOC relationship. This presents a challenge for estimation as multiple force values can correspond to the same SOC. The traditional linear quadratic estimator can be driven to an incorrect SOC value. To address these difficulties, a novel switching estimation gain is used based on determining the operating region that corresponds to the actual SOC. Moreover, a drift in the measured force associated with a shift of the cell SOC–expansion behavior over time is addressed with a bias estimator for the force signal. The performance of Voltage-based (V) and Voltage and Force-based (V&F) SOC estimation algorithms are then compared and evaluated against a desired ±5% absolute error bound of the SOC using a dynamic stress test current protocol that tests the proposed estimation scheme across wide range of SOC and current rates.

25 ENERGY STORAGE↗

Fabricating Graphene Oxide/h-BN Metal Insulator Semiconductor Diodes by Nanosecond Laser Irradiation

To employ graphene’s rapid conduction in 2D devices, a heterostructure with a broad bandgap dielectric that is free of traps is required. Within this paradigm, h-BN is a good candidate because of its graphene-like structure and ultrawide bandgap. We show how to make such a heterostructure by irradiating alternating layers of a-C and a-BN film with a nanosecond excimer laser, melting and zone-refining constituent layers in the process. With Raman spectroscopy and ToF-SIMS analyses, we demonstrate this localized zone-refining into phase-pure h-BN and rGO films with distinct Raman vibrational modes and SIMS profile flattening after laser irradiation. Furthermore, in comparing laser-irradiated rGO-Si MS and rGO/h-BN/Si MIS diodes, the MIS diodes exhibit an increased turn-on voltage (4.4 V) and low leakage current. The MIS diode I-V characteristics reveal direct tunneling conduction under low bias and Fowler-Nordheim tunneling in the high-voltage regime, turning the MIS diode ON with improved rectification and current flow. This study sheds light on the nonequilibrium approaches to engineering h-BN and graphene heterostructures for ultrathin field effect transistor device development.

2D materials↗

Evaluation of Low-Pressure-Sintered Multi-Layer Substrates for Medium-Voltage SiC Power Modules: Preprint

Direct-bonded aluminum (DBA) multi-layer substrates have been fabricated using low-pressure silver sintering. These multi-layer substrates can be used to reduce the peak electric field strength inside power modules. This benefit is particularly important for medium-voltage silicon carbide (SiC) MOSFETs due to their higher operating voltages. The voiding content and defect density of the bond used to create the multi-layer substrate stackup is critical to the thermal performance and reliability of the power module. This work two low-pressure-assisted sintering techniques; one using nano-silver preform and the other using nano-silver paste to bond 23 mm by 49 mm DBA substrates. Scanning acoustic microscopy (C-SAM) is used to evaluate the bond quality after sintering. To evaluate the reliability of the sintered multi-layer substrates, passive thermal cycling from –40 °C to 200 °C was performed. Cross-sections were cut at pre-determined intervals and imaged with Scanning Electron Microscopy (SEM). After 1,000 thermal cycles, minor cracking was observed, but no failures have occurred.

28 EE - Advanced Manufacturing Office (EE-5A)↗

Stacked Low-Inertia Converter or Solid-State Transformer: Modeling and Model Predictive Priority-Shifting Control for Voltage Balance

This paper presents control challenges of stacked low-inertia converter (SLIC) or cascaded reduced dc-link solid-state transformer (SST) and proposes a novel model predictive priority-shifting (MPPS) control with implicit modulator and a discrete-time large-signal model for voltage balancing and dc-link regulation. Low-inertia converters, featuring small electrolytic capacitor-less dc links, dramatically reduce cost, size, and weight compared to conventional solutions. However, without a large dc-link buffer, the input and output are tightly coupled, leading to significant control challenges. The control becomes even more challenging with these converters stacked input-series output-parallel (ISOP) for medium-voltage (MV) grid, which causes coupling between the modules besides the coupling within each module. This paper analyzes the multi-objective, multi-degree of freedom control problem, using the modular soft-switching solid-state transformer (M-S4T) as an example of the SLIC. First, distribution of control efforts under controller saturation is critical because multiple control objectives can be conflicting, especially when the module voltages are unbalanced and are being restored. The MPPS can shift the priorities to address this issue. Second, due to the low inertia and high dc-link ripple, classic space vector pulse-width modulation (SVPWM), average model with small-ripple assumption, and control design based on small-signal model cannot accurately modulate, model, and control the nonlinear reduced dc link. Therefore, a discrete-time large-signal model of the M-S4T is established to derive the predictive control in the MPPS. The MPPS and the PI control are compared in MV simulations to show the issue of applying the PI to the SLIC and the effectiveness of the MPPS for voltage balancing and dc-link regulation in a deadbeat manner. Finally, the proposed control is tested on a 5 kV ISOP SiC SST prototype to verify priority shifting to address controller saturation issue and fast and robust voltage balancing.

14 SOLAR ENERGY↗

Lower limits for non-radiative recombination loss in organic donor/acceptor complexes

Understanding the factors controlling radiative and non-radiative transition rates for charge transfer states in organic systems is important for applications ranging from organic photovoltaics (OPV) to lasers and LEDs. Here we explore the role of charge-transfer (CT) energetics, lifetimes, and photovoltaic properties in the limit of very slow non-radiative rates by using a model donor/acceptor system with photoluminescence dominated by thermally activated delayed fluorescence (TADF). This blend exhibits an extremely high photoluminescence quantum efficiency (PLQY = ~22%) and comparatively long PL lifetime, while simultaneously yielding appreciable amounts of free charge generation (photocurrent external quantum efficiency EQE of 24%). In solar cells, this blend exhibits non-radiative voltage losses of only ~0.1 V, among the lowest reported for an organic system. Notably, we find that the non-radiative decay rate, k nr , is on the order of 10 5 s -1 , approximately 4–5 orders of magnitude slower than typical OPV blends, thereby confirming that high radiative efficiency and low non-radiative voltage losses are achievable by reducing k nr . Furthermore, despite the high radiative efficiency and already comparatively slow k nr , we find that k nr is nevertheless much faster than predicted by Marcus–Levich–Jortner two-state theory and we conclude that CT-local exciton (LE) hybridization is present. Our findings highlight that it is crucial to evaluate how radiative and non-radiative rates of the LE states individually influence the PLQY of charge-transfer states, rather than solely focusing on the PLQY of the LE. This conclusion will guide material selection in achieving low non-radiative voltage loss in organic solar cells and high luminescence efficiency in organic LEDs.

36 MATERIALS SCIENCE↗