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Impact of Surface Recombination on Single-Event Charge Collection in an SOI Technology
Semiconductor–insulator interfaces play an important role in the reliability of integrated devices; however, the impact of these interfaces on the physical mechanisms related to single-event effects has not been previously reported. We present experimental data that demonstrate that single-event charge collection can be impacted by changes in interface quality. The experimental data, combined with simulations, show that single-event response may depend on surface recombination at interface defects. The effect depends on strike location and increases with increasing linear energy transfer (LET). Surface recombination can affect single-event charge collection for interfaces with a surface recombination velocity (SRV) of 1000 cm/s and is a dominant charge collection mechanism with SRV >10 5 cm/s.
A 32-channels readout ASIC for X-ray spectrometry and tracking in the GAPS experiment
Here this work describes the architecture and the experimental results from the characterization of a 32-channels mixed-signal Application-Specific Integrated Circuit (ASIC) developed for the readout of the lithium-drifted silicon, Si(Li), detectors of the General AntiParticle Spectrometer (GAPS) experiment dedicated to searching for dark matter. The instrument is designed for the identification of antiprotons, antideuterons and antihelium nuclei from cosmic rays during an Antarctic balloon mission scheduled for late 2024. A full custom integrated circuit, named SLIDER32 (32-channels Si-LI DEtector Readout) ASIC, has been produced in a commercial 180 nm CMOS technology. The ASIC is comprised of 32 low-noise analog readout channels featuring dynamic signal compression to comply with the wide input range, an 11-bit SAR ADC and a digital back-end section which is responsible for channel setting and for sending digital information to the data acquisition system (DAQ). The circuit design criteria and the experimental results are discussed in the paper.
Ephemeral Electric Potential and Electric Field Sensor
Systems, methods, and devices of the various embodiments provide for the minimization of the effects of intrinsic and extrinsic leakage electrical currents enabling true measurements of electric potentials and electric fields. In an embodiment, an ephemeral electric potential and electric field sensor system may have at least one electric field sensor and a rotator coupled to the electric field sensor and be configured to rotate the electric field sensor at a quasi-static frequency. In an embodiment, ephemeral electric potential and electric field measurements may be taken by rotating at least one electric field sensor at a quasi-static frequency, receiving electrical potential measurements from the electric field sensor when the electric field sensor is rotating at the quasi-static frequency, and generating and outputting images based at least in part on the received electrical potential measurements.
Evaluation of Series T22 Wet Tantalum Capacitors
Several types of advanced wet tantalum capacitors, and series T22 in particular, are designed without internal Teflon sealing that is used for military grade, CLR style capacitors. This raises concerns regarding hermeticity of the single seal parts and their capability to withstand high internal gas pressures that might develop during operation in space. To address these issues, T22 series capacitors rated to 50 V and 125 V were subjected to highly accelerated life testing (HALT) at 125 C and rated voltage and step stress random vibration testing (RVT). To simulate conditions of storage or operation under increased internal gas pressure, the parts were stored at temperature of 150 C for 2500 hr (HTS150). Electrical characteristics of the parts were measured through the storage testing and the hermeticity leak rate was tested before and after HTS150. To assess thermo-mechanical robustness of the part, capacitors were manually soldered onto printed wired boards (PWB) and stressed by 1000 temperature cycles between -55 C and +125 C. The effect of temperature cycling was assessed by additional HALT at different temperatures. Results show that T22 series capacitors have robust design and can satisfy requirements for space applications.
Integrated circuit electrometer and sweep circuitry for an atmospheric probe
The design of electrometer circuitry using an integrated circuit operational amplifier with a MOSFET input is described. Input protection against static voltages is provided by a dual ultra low leakage diode or a neon lamp. Factors affecting frequency response leakage resistance, and current stability are discussed, and methods are suggested for increasing response speed and for eliminating leakage resistance and current instabilities. Based on the above, two practical circuits, one having a linear response and the other a logarithmic response, were designed and evaluated experimentally. The design of a sweep circuit to implement mobility measurements using atmospheric probes is presented. A triangular voltage waveform is generated and shaped to contain a step in voltage from zero volts in both positive and negative directions.
A Wide Bandwidth Model for the Electrical Impedance of Magnetic BearingS
Magnetic bearings are often designed using magnetic circuit theory. When these bearings are built, however, effects not included in the usual circuit theory formulation have a significant influence on bearing performance. Two significant sources of error in the circuit theory approach are the neglect of leakage and fringing effects and the neglect of eddy current effects. This work formulates an augmented circuit model in which eddy current and flux leakage and fringing effects are included. Through the use of this model, eddy current power losses and actuator bandwidth can be derived. Electrical impedance predictions from the model are found to be in good agreement with experimental data from a typical magnetic bearing.
New Insights on Subsurface Imaging of Carbon Nanotubes in Polymer Composites via Scanning Electron Microscopy
Despite many studies of subsurface imaging of carbon nanotube (CNT)-polymer composites via scanning electron microscopy (SEM), significant controversy exists concerning the imaging depth and contrast mechanisms. We studied CNT-polyimide composites and, by threedimensional reconstructions of captured stereo-pair images, determined that the maximum SEM imaging depth was typically hundreds of nanometers. The contrast mechanisms were investigated over a broad range of beam accelerating voltages from 0.3 to 30 kV, and ascribed to modulation by embedded CNTs of the effective secondary electron (SE) emission yield at the polymer surface. This modulation of the SE yield is due to non-uniform surface potential distribution resulting from current flows due to leakage and electron beam induced current. The importance of an external electric field on SEM subsurface imaging was also demonstrated. The insights gained from this study can be generally applied to SEM nondestructive subsurface imaging of conducting nanostructures embedded in dielectric matrices such as graphene-polymer composites, silicon-based single electron transistors, high resolution SEM overlay metrology or e-beam lithography, and have significant implications in nanotechnology.
2-D Modeling of Nanoscale MOSFETs: Non-Equilibrium Green's Function Approach
We have developed physical approximations and computer code capable of realistically simulating 2-D nanoscale transistors, using the non-equilibrium Green's function (NEGF) method. This is the most accurate full quantum model yet applied to 2-D device simulation. Open boundary conditions and oxide tunneling are treated on an equal footing. Electrons in the ellipsoids of the conduction band are treated within the anisotropic effective mass approximation. Electron-electron interaction is treated within Hartree approximation by solving NEGF and Poisson equations self-consistently. For the calculations presented here, parallelization is performed by distributing the solution of NEGF equations to various processors, energy wise. We present simulation of the "benchmark" MIT 25nm and 90nm MOSFETs and compare our results to those from the drift-diffusion simulator and the quantum-corrected results available. In the 25nm MOSFET, the channel length is less than ten times the electron wavelength, and the electron scattering time is comparable to its transit time. Our main results are: (1) Simulated drain subthreshold current characteristics are shown, where the potential profiles are calculated self-consistently by the corresponding simulation methods. The current predicted by our quantum simulation has smaller subthreshold slope of the Vg dependence which results in higher threshold voltage. (2) When gate oxide thickness is less than 2 nm, gate oxide leakage is a primary factor which determines off-current of a MOSFET (3) Using our 2-D NEGF simulator, we found several ways to drastically decrease oxide leakage current without compromising drive current. (4) Quantum mechanically calculated electron density is much smaller than the background doping density in the poly silicon gate region near oxide interface. This creates an additional effective gate voltage. Different ways to. include this effect approximately will be discussed.
Ultrawide bandgap vertical β-(Al x Ga1 −x )2O3 Schottky barrier diodes on free-standing β-Ga2O3 substrates
Ultrawide bandgap β-(AlxGa1−x)2O3 vertical Schottky barrier diodes on (010) β-Ga2O3 substrates are demonstrated. The β-(AlxGa1−x)2O3 epilayer has an Al composition of 21% and a nominal Si doping of 2 × 1017 cm−3 grown by molecular beam epitaxy. Pt/Ti/Au has been employed as the top Schottky contact, whereas Ti/Au has been utilized as the bottom Ohmic contact. The fabricated devices show excellent rectification with a high on/off ratio of ∼109, a turn-on voltage of 1.5 V, and an on-resistance of 3.4 mΩ cm2. Temperature-dependent forward current-voltage characteristics show effective Schottky barrier height varied from 0.91 to 1.18 eV while the ideality factor from 1.8 to 1.1 with increasing temperatures, which is ascribed to the inhomogeneity of the metal/semiconductor interface. The Schottky barrier height was considered a Gaussian distribution of potential, where the extracted mean barrier height and a standard deviation at zero bias were 1.81 and 0.18 eV, respectively. A comprehensive analysis of the device leakage was performed to identify possible leakage mechanisms by studying temperature-dependent reverse current-voltage characteristics. At reverse bias, due to the large Schottky barrier height, the contributions from thermionic emission and thermionic field emission are negligible. By fitting reverse leakage currents at different temperatures, it was identified that Poole–Frenkel emission and trap-assisted tunneling are the main leakage mechanisms at high- and low-temperature regimes, respectively. Electrons can tunnel through the Schottky barrier assisted by traps at low temperatures, while they can escape these traps at high temperatures and be transported under high electric fields. This work can serve as an important reference for the future development of ultrawide bandgap β-(AlxGa1−x)2O3 power electronics, RF electronics, and ultraviolet photonics.
Design improvement of a pump wear ring labyrinth seal
The investigation was successful in obtaining two improved designs for the impeller wear ring seal of the liquid hydrogen turbopump of interest. A finite difference computer code was extensively used in a parametric computational study in determining a cavity configuration with high flow resistance due to turbulence dissipation. These two designs, along with that currently used, were fabricated and tested. The improved designs were denoted Type O and Type S. The measurements showed that Type O and Type S given 67 and 30 percent reduction in leakage over the current design, respectively. It was found that the number of cavities, the step height and the presence of a small stator groove are quite important design features. Also, the tooth thickness is of some significance. Finally, the tooth height and an additional large cavity cut out from the stator (upstream of the step) are of negligible importance.
An APEC-covered 2-D NEM macroscopic depletion analysis of partial MOX SMRs
A proper leakage correction is mandatory for a depletion analysis based on the conventional two-step method to take into account neighborhood effect. This study aims to apply the albedo-corrected parameterized equivalence constant (APEC) method to a macroscopic depletion in 2-D NEM analysis and assess the performance of introduced 1x1 and 2x2 APEC leakage corrections. The main idea of the APEC leakage correction is to correct homogenized group constants (HGCs) by predetermined APEC functions as a function of a normalized leakage parameter, current-to-flux ratio (CFR). Predetermined APEC functions consist of APEC cross-section (XS) and discontinuity factor (DF), and various color-set burnup calculations are conducted to generate burnup-dependent APEC functions. In this work, partial MOX SMR and variant cores are introduced to evaluate the applicability of the APEC leakage correction even in partially MOX-loaded SMRs, which are difficult to be analyzed by the conventional two-step method. Results show that the burnup-dependent 2x2 APEC leakage correction can improve the nodal equivalence in partial MOX SMRs. The burnup-dependent 2x2 APEC leakage correction is recommended to overcome the inherent limitation of the macroscopic depletion analysis with the conventional two-step method. (authors)
Impact of the Transformer Magnetizing Inductance on the Performance of the Dual-Active Bridge Converter
The magnetizing inductance of the high-frequency transformer in the dual-active bridge (DAB) converter is usually assumed to be much larger than its leakage inductance, thereby the magnetizing current can be negligible. However, ignoring the magnetizing current will lead to an error in the DAB converter design process. This paper analyzes the operation and performance of the DAB converter for a general case in which the transformer magnetizing inductance is taken into consideration. The analysis shows that the magnetizing inductance impacts the soft-switching region, the power transfer capability, and the leakage inductor current. A simulation case study is provided to verify the analysis. A DAB converter prototype is built to experimentally validate the analysis as well.
Improved Photon-Emission-Microscope System
An improved photon-emission-microscope (PEM) instrumentation system has been developed for use in diagnosing failure conditions in semiconductor devices, including complex integrated circuits. This system is designed primarily to image areas that emit photons, at wavelengths from 400 to 1,100 nm, associated with device failures caused by leakage of electric current through SiO2 and other dielectric materials used in multilayer semiconductor structures. In addition, the system is sensitive enough to image areas that emit photons during normal operation.
Superionic fluoride gate dielectrics with low diffusion barrier for two-dimensional electronics
Exploration of new dielectrics with a large capacitive coupling is an essential topic in modern electronics when conventional dielectrics suffer from the leakage issue near the breakdown limit. Here, to address this looming challenge, we demonstrate that rare-earth metal fluorides with extremely low ion migration barriers can generally exhibit an excellent capacitive coupling over 20 μF cm -2 (with an equivalent oxide thickness of ~0.15 nm and a large effective dielectric constant near 30) and great compatibility with scalable device manufacturing processes. Such a static dielectric capability of superionic fluorides is exemplified by MoS 2 transistors exhibiting high on/off current ratios over 10 8 , ultralow subthreshold swing of 65 mV dec -1 and ultralow leakage current density of ~10 -6 A cm -2 . Therefore, the fluoride-gated logic inverters can achieve notably higher static voltage gain values (surpassing ~167) compared with a conventional dielectric. Furthermore, the application of fluoride gating enables the demonstration of NAND, NOR, AND and OR logic circuits with low static energy consumption. In particular, the superconductor–insulator transition at the clean-limit Bi 2 Sr 2 CaCu 2 O 8+δ can also be realized through fluoride gating. In conclusion, our findings highlight fluoride dielectrics as a pioneering platform for advanced electronic applications and for tailoring emergent electronic states in condensed matter.
Design and Application of Hybrid Magnetic Field-Eddy Current Probe
The incorporation of magnetic field sensors into eddy current probes can result in novel probe designs with unique performance characteristics. One such example is a recently developed electromagnetic probe consisting of a two-channel magnetoresistive sensor with an embedded single-strand eddy current inducer. Magnetic flux leakage maps of ferrous materials are generated from the DC sensor response while high-resolution eddy current imaging is simultaneously performed at frequencies up to 5 megahertz. In this work the design and optimization of this probe will be presented, along with an application toward analysis of sensory materials with embedded ferromagnetic shape-memory alloy (FSMA) particles. The sensory material is designed to produce a paramagnetic to ferromagnetic transition in the FSMA particles under strain. Mapping of the stray magnetic field and eddy current response of the sample with the hybrid probe can thereby image locations in the structure which have experienced an overstrain condition. Numerical modeling of the probe response is performed with good agreement with experimental results.
The influence of V-defects, leakage, and random alloy fluctuations on the carrier transport in red InGaN MQW LEDs
Red InGaN-based light-emitting diodes (LEDs) exhibit lower internal quantum efficiencies than violet, blue, and green InGaN LEDs due to a reduction in radiative recombination rates relative to non-radiative recombination rates as the Indium composition increases. Additionally, the larger polarization and band offset barriers between high indium content InGaN quantum wells and GaN quantum barriers increase the forward voltage. In blue and green LEDs, random alloy fluctuations and V-defects play a key role in reducing the forward voltage. When V-defects are present, either naturally or intentionally introduced, they create an alternative path for carrier injection into the MQWs through the V-defect sidewalls. This injection mechanism explains the turn-on voltages of green LEDs. However, in InGaN red LEDs, these two phenomena do not reduce the forward voltage as effectively as in blue and green LEDs, and consequently, the computed forward voltage remains significantly higher than the measured one. Furthermore, currents are observed at low voltages before the turn-on voltage (V<ℏω/e=2.0 V) of red LEDs. To address this, we introduce dislocation-induced tail states in the modeling, suggesting that leakage current through these states may play a significant role both below and at turn-on voltages. The simulation also indicates that leakage carriers below turn-on accumulate, partially diffuse in the QWs, screen the polarization-induced barrier in the low injection regime, and further reduce the forward voltage. Despite these beneficial effects, a drawback of dislocation-induced tail states is the enhanced nonradiative recombination in the dislocation line region. This study provides a detailed analysis of device injection physics in InGaN QW red LEDs and outlines potential optimization strategies.