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The results of a program to demonstrate the feasibility of a low angle silicon ribbon growth process are described. Twenty-six experimental runs were performed. Ribbons were grown at pull rates from 5 to 68 cm/min. Ribbon lengths up to 74 cm were grown while widths varied from 5 to 25 mm. Thicknesses varied from 0.6 to 2.5 mm, with typical values of about 1 mm.
The SCIM (Silicon-Coating-By-Inverted Meniscus) process to produce SOC (silicon-on-ceramic) substrates has been investigated for various growth conditions and substrate velocities (4-30 cm/min). Slotted mullite-based substrates (10-cm-wide by 100-cm-long) have been coated with smooth, continuous silicon layers, with thicknesses in the range from 100 to 300 microns. Thermal stress (which can be a problem at low velocities) is prevented by proper thermal design. The highest SCIM-coated SOC cell efficiencies to date are 7.5% (AM1, AR) as compared to 10.5% (AM1, AR) for dip-coated SOC cells. Substantial improvements in cell efficiency are expected when high purity parts are installed in the SCIM-coater.
The thermal stress model was used to generate the design of a low stress lid and shield configuration, which was fabricated and tested experimentally. In preliminary tests, the New Experimental Web Growth Facility performed as designed, producing web on the first run. These experiments suggested desirable design modifications in the melt level sensing system to improve further its performance, and these are being implemented.
The computer code for calculating web temperature distribution was expanded to provide a graphics output in addition to numerical and punch card output. The new code was used to examine various modifications of the J419 configuration and, on the basis of the results, a new growth geometry was designed. Additionally, several mathematically defined temperature profiles were evaluated for the effects of the free boundary (growth front) on the thermal stress generation. Experimental growth runs were made with modified J419 configurations to complement the modeling work. A modified J435 configuration was evaluated.
The "discrete shield' temperature model was completed and verified. Modifications to the J419 low stress configuration were tested experimentally to evaluate effects on growth speed. A composite lid and shield configuration combining the low stress features of the J419 with the width limiting characteristics of the J98M3 was fabricated and tested in the N-furnace. Several long crystals were grown with width limited to about 3.3 cm and with melt replenishment, although the configuration is not yet optimized for steady state growth.
Annealing of radiation damage was observed for the first time in VPE-grown, 2- by 2-cm, n+/p/p+ GaAs shallow homojunction solar cells. Electrical performance of several cells was determined as a function of 1-MeV electron fluence in the range of 10 to the 13th power to 10 to the 15th power e-/sq cm and as a function of thermal annealing time at various temperatures. Degradation of normalized power output after a fluence of 10 to the 15th power 1-MeV electrons/sq cm ranged from a low of 24 to 31 percent of initial maximum power. Normalized short circuit current degradation was limited to the range from 10 to 19 percent of preirradiated values. Thermal annealing was carried out in a flowing nitrogen gas ambient, with annealing temperatures spanning the range from 125 to 200 C. Substantial recovery of short circuit current was observed at temperatures as low as 175 C. In one case improvement by as much as 10 percent of the postirradiated value was observed. The key features of these cells are their extremely thin emitter layers (approxmately 0.05 micrometers), the absence of any Al sub xGd sub 1-x As passivating window layer, and their fabrication by vapor phase epitaxy.
The models of Hornstra and their connection to the repeating group description of grain boundaries (7-10) are discussed. A model for the Sigma = 27 boundary containing a zig-zag arrangement of dislocations is constructed and it is shown that zig-zag models can account for the contrast features observed in high resolution transmission electron micrographs of second and third order twin boundaries in silicon. The boundaries discussed are symmetric with a 110 tilt axis and a (110) boundary plane in the median lattice (the median plane). The median lattice is identical in structure and halfway in orientation between the crystal lattices either side of the boundary.
Statistically significant quantitative structural imperfection measurements were made on samples from ubiquitous crystalline process (UCP) Ingot 5848 - 13C. Important correlation was obtained between defect densities, cell efficiency, and diffusion length. Grain boundary substructure displayed a strong influence on the conversion efficiency of solar cells from Semix material. Quantitative microscopy measurements gave statistically significant information compared to other microanalytical techniques. A surface preparation technique to obtain proper contrast of structural defects suitable for quantimet quantitative image analyzer (QTM) analysis was perfected and is used routinely. The relationships between hole mobility and grain boundary density was determined. Mobility was measured using the van der Pauw technique, and grain boundary density was measured using quantitative microscopy technique. Mobility was found to decrease with increasing grain boundary density.
Several areas of silicon sheet growth development are addressed including: silicon ingot casting, heat exchanger method, multiwire slicing, and fixed abrasive slicing technique.
Thermally generated stresses in the growing web crystal were reduced. These stresses, which if too high cause the ribbon to degenerate, were reduced by a factor of three, resulting in the demonstrated growth of high-quality web crystals to widths of 5.4 cm. This progress was brought about chiefly by the application of thermal models to the development of low-stress growth configurations. A new temperature model was developed which can analyze the thermal effects of much more complex lid and top shield configurations than was possible with the old lumped shield model. Growth experiments which supplied input data such as actual shield temperature and melt levels were used to verify the modeling results. Desirable modifications in the melt level-sensing circuitry were made in the new experimental web growth furnace, and this furnace has been used to carry out growth experiments under steady-state conditions. New growth configurations were tested in long growth runs at Westinghouse AESD which produced wider, lower stress and higher quality web crystals than designs previously used.
The thermal stress models were used to test the effect of melt level on stress generation and growth velocity. The results indicate that melt level has only small effects on stresses but significant effects on growth velocity. These results are consistent with experimental growth from measured melt levels. A new low-stress design concept is being evaluated with the models. A width-limiting version of the low-stress J460 configuration was tested experimentally with results consistent with the design goals.
Modeling in the development of low stress configurations for wide web growth is presented. Parametric sensitivity to identify design features which can be used for dynamic trimming of the furnace element was studied. Temperature measurements of experimental growth behavior led to modification in the growth system to improve lateral temperature distributions.
Observations of a weak cosmic gamma ray burst of integrated intensity 2 x 10 to the -6th erg/sq cm, two solar flare events, and pulsed emission profiles of A0535+26 and NP0532 are reported for several energy intervals in the energy range from 45 to 520 keV. The measurements were made with a NaI(Tl) detector array flown on a balloon to 4 g/sq cm residual atmosphere from Palestine, Texas, on October 6-8, 1980, for 28 hours. The detector is a prototype of the Burst and Transient Source Experiment (BATSE) to be flown on the Gamma-Ray Observatory (GRO).
A reproducible process is described for growing a thick single-crystal layer of cubic SiC on a single-crystal Si wafer by chemical vapor deposition. A buffer layer, grown in situ, is used between the cubic SiC and the Si substrate to minimize the effect of lattice mismatch. Layers of up to 34 microns thick and several sq cm in area have been grown. Wafers are obtained by chemically removing the Si substrates from the grown layers. Excellent electron channeling patterns produced by these wafers indicate very good crystal quality. Preliminary electrical measurements have yielded electron mobilities up to 380 sq cm/Vs.
Polyurethane foam provides effective mask in electroplating of copper or nickel. Thin layer of Turco maskant painted on area to be masked: Layer ensures polyurethane foam removed easily after served its purpose. Component A, isocyanate, and component B, polyol, mixed together and brushed or sprayed on mask area. Mixture reacts, yielding polyurethane foam. Foam prevents deposition of nickel or copper on covered area. New method saves time, increases productivity and uses less material than older procedures.
Results established for four digital procedures developed for characterizing the radiometric changes between multidate LANDSAT spectral data sets into meaningful measures of land cover/use dynamics are documented. Each technique's performance was contrasted against digitized land use change maps, which were produced from contemporaneous, retrospective aerophoto coverage, in a cell by cell comparison over a one half by one degree area in east central Louisiana as a standard for comparison. The four techniques identify from 10.5 to 13.0% loss in area of forestland in a five year period; however, they differ more by how accurately this amount of change is distributed, the need for ancillary ground truth, and amount of usable information that is extractable. All require some method of digitally co-registering the two data sets. All are capable of providing tabular statistics as well as map products. Two are capable of detecting changes and identifying their locations. The other two, in addition to this, provide information to qualify land cover conditions at each end of the study interval.
The thermal models used for analyzing dendritic web growth and calculating the thermal stress were reexamined to establish the validity limits imposed by the assumptions of the models. Also, the effects of thermal conduction through the gas phase were evaluated and found to be small. New growth designs, both static and dynamic, were generated using the modeling results. Residual stress effects in dendritic web were examined. In the laboratory, new techniques for the control of temperature distributions in three dimensions were developed. A new maximum undeformed web width of 5.8 cm was achieved. A 58% increase in growth velocity of 150 micrometers thickness was achieved with dynamic hardware. The area throughput goals for transient growth of 30 and 35 sq cm/min were exceeded.
Results of the development of a 34.3 sq cm space solar cell and integral glass cover are presented. Average AM(0) cell efficiency is 14 percent. The cell design includes a high performance back surface reflector yielding a thermal alpha of approximately 0.66. A novel process is described which integrates cell fabrication and encapsulation thereby achieving a reduction of encapsulation cost. Test results indicate the potential of this new technology.