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Violet cells with 500-1000 A junction depths have been made in GaAs by narrow junction diffusion followed by anodization. The best AM0 efficiencies obtained by this technique have been 10.5% (14% at AM1). GaAlAs-GaAs structures with very thin GaAlAs layers are much more promising, and efficiencies of over 18% at AM0 have been measured (21.9% at AM1).
We describe the modeling and subsequent improvements of SIS waveguide mixers for the 200-270 and 330-370 GHz bands (Blundell, Carter, and Gundlach 1988, Carter et al 1991). These mixers are constructed for use in receivers on IRAM radiotelescopes on Pico Veleta (Spain, Sierra Nevada) and Plateau de Bure (French Alps), and must meet specific requirements. The standard reduced height waveguide structure with suspended stripline is first analyzed and a model is validated through comparison with scale model and working scale measurements. In the first step, the intrinsic limitations of the standard mixer structure are identified, and the parameters are optimized bearing in mind the radioastronomical applications. In the second step, inductive tuning of the junctions is introduced and optimized for minimum noise and maximum bandwidth. In the 1.3 mm band, a DSB receiver temperature of less than 110 K (minimum 80 K) is measured from 180 through 260 GHz. In the 0.8 mm band, a DSB receiver temperature of less than 250 K (minimum 175 K) is obtained between 325 and 355 GHz. All these results are obtained with room-temperature optics and a 4 GHz IF chain having a 500 MHz bandwidth and a noise temperature of 14 K.
A preliminary study of structural concepts for noncircular fuselage configurations is presented. For an unconventional flying-wing type aircraft, in which the fuselage is inside the wing, multiple fuselage bays with non-circular sections need to be considered. In a conventional circular fuselage section, internal pressure is carried efficiently by a thin skin via hoop tension. If the section is non-circular, internal pressure loads also induce large bending stresses. The structure must also withstand additional bending and compression loads from aerodynamic and gravitational forces. Flat and vaulted shell structural configurations for such an unconventional, non-circular pressurized fuselage of a large flying-wing were studied. A deep honeycomb sandwich-shell and a ribbed double-wall shell construction were considered. Combinations of these structural concepts were analyzed using both analytical and simple finite element models of isolated sections for a comparative conceptual study. Weight, stress, and deflection results were compared to identify a suitable configuration for detailed analyses. The flat sandwich-shell concept was found preferable to the vaulted shell concept due to its superior buckling stiffness. Vaulted double-skin ribbed shell configurations were found to be superior due to their weight savings, load diffusion, and fail-safe features. The vaulted double-skin ribbed shell structure concept was also analyzed for an integrated wing-fuselage finite element model. Additional problem areas such as wing-fuselage junction and pressure-bearing spar were identified.
We present new heterodyne receiver results obtained at 100 GHz using resistively-shunted Nb and NbN tunnel junctions. In addition, we have carried out accurate measurements of the available noise power of these devices at the L-band (1.5 GHz) IF (infrasonic) frequency. Both the heterodyne and the output noise measurements show that the noise of these devices can be a factor of five or more higher than that predicted by the simple current-biased RSJ model. The noise approaches the appropriate thermal or thermal and shot noise limits for bias voltages where the nonlinearity is not strong (i.e., V greater than I(sub C)R(sub N)), but as expected from the RSJ model, can be significantly higher at the low voltages where the mixers are typically biased. The bias voltage dependence of the noise shows structure which is associated with resonances in the RF embedding circuit. Surprisingly, we find that changes in the high-frequency (100 GHz) impedance presented to the junction can dramatically affect the magnitude and voltage dependence of the low-frequency (1.5 GHz) noise. This emphasizes the necessity of very closely matching the junction to free space over a wide frequency range.
Recent advancements in RNA structural biology have focused on unraveling the complexities of non-coding mRNA elements like riboswitches. These cis-acting regulatory regions undergo structural changes in response to specific cellular metabolites, leading to up or downregulation of downstream genes. The purine riboswitch family regulates many prokaryotic genes involved in purine degradation and biosynthesis. They feature an aptamer domain organized around a 3-way helical junction, where ligand encapsulation occurs at the junctional core. In our study, we chemically probed the aptamer domain of the 2’-dG-sensing purine riboswitch from Mesoplasma florum (dGsw) under various solution conditions to understand how Mg²⁺ and 2’-dG influence riboswitch folding. Here, we find that efficient 2’-dG binding strongly depends on Mg²⁺, indicating that Mg²⁺ is essential for priming dGsw for ligand interactions. We identified a previously undescribed sequence in the 5’ tail of dGsw that is complementary to a conserved helix. The inclusion of this region in a construct led to intramolecular competition between the alternate helix, Palt, and P1. Mutational analysis confirmed that 5’ flanking end of the aptamer domain forms an alternate helix in the absence of ligand. Molecular dynamics simulations revealed that this alternative conformation is stable. This helix may, therefore, facilitate the formation of an anti-terminator helix by opening the 3-way junction surrounding the 2’-dG binding site. Our study further establishes the importance of a closed terminal P1 helix conformation for metabolite binding and suggests that the delicate interplay between P1 and Palt may fine-tune downstream gene regulation. These insights offer a new perspective on riboswitch structure and enhance our understanding of the role that a conformational ensemble plays in riboswitch activity and regulation.
Probing charge and energy transport in molecular junctions (MJs) has not only enabled a fundamental understanding of quantum transport at the atomic and molecular scale, but it also holds significant promise for the development of molecular-scale electronic devices. Recent years have witnessed a rapidly growing interest in understanding light-matter interactions in illuminated MJs. These studies have profoundly deepened our knowledge of the structure–property relations of various molecular materials and paved critical pathways towards utilizing single molecules in future optoelectronics applications. In this article, we survey recent progress in investigating light-driven charge transport in MJs, including junctions composed of a single molecule and self-assembled monolayers (SAMs) of molecules, and new opportunities in optical sensing at the single-molecule level. We focus our attention on describing the experimental design, key phenomena, and the underlying mechanisms. Specifically, topics presented include light-assisted charge transport, photoswitch, and photoemission in MJs. Emerging Raman sensing in MJs is also discussed. Finally, outstanding challenges are explored, and future perspectives in the field are provided.
Molecular- and nano- junctions, surfaces, interfaces, and interfacial processes have been the subjects of this DOE supported program for about 20 years. We have investigated electronic and magnetic structure, spin-dependent charge transport, and emerging phenomena at surfaces and interfaces in a number of physical systems ranging from nano-clusters, to nanowires, to two-dimensional (2D) crystals and their interactions, to bulk matter. Eighty-four refereed papers were published [1-84], with a majority effort from the group led by the PI, and over a hundred presentations were made at international conferences. We use first-principles methods in the framework of density functional theory in conjunction with nano-equilibrium Green function techniques, semi-empirical Boltzmann transport theory, tight-binding models, and the Hubbard model and many-body wavefunction approaches. In pursuing our scientific goals, we have also developed a number of computational algorithms and computational packages.
Reversible logic schemes using flux solitons (fluxons) on long Josephson junctions (LJJs) have recently been proposed. The attraction of the fluxon is that it propagates ballistically along an LJJ until it encounters a change in the character of the LJJ, often a designed circuit element. Logic gates involve fluxons interacting with circuit elements and with other fluxons. However, testing of ballistic fluxon circuits requires other circuits outside the logic family to direct and control fluxon motion. Here we discuss two such non-reversible fluxon control circuits. First, the polarity filter gate is a simple non-reversible gate that allows one polarity of fluxon to pass, while reflecting the other polarity. In the off state both polarities reflect. Second, the polarity separator generalizes on the polarity filter concept and allows separation of the two fluxon polarities into different LJJs. We discuss simulations of these structures and possible applications.
Branched DNA motifs serve as the basic construction elements for all synthetic DNA nanostructures. However, precise control of branching orientation remains a key challenge to further heighten the overall structural order. Here in this study, we use two strategies to control the branching orientation. The first one is based on immobile Holliday junctions which employ specific nucleotide sequences at the branch points which dictate their orientation. The second strategy is to use angle-enforcing struts to fix the branching orientation with flexible spacers at the branch points. We have also demonstrated that the branching orientation control can be achieved dynamically, either by canonical Watson–Crick base pairing or non-canonical nucleobase interactions (e.g., i-motif and G-quadruplex). With precise angle control and feedback from the chemical environment, these results will enable novel DNA nanomechanical sensing devices, and precisely-ordered three-dimensional architectures.
Antiferromagnetic spintronics offers the potential for higher-frequency operations and improved insensitivity to magnetic fields compared to ferromagnetic spintronics. However, previous electrical techniques to detect antiferromagnetic dynamics have utilized large, millimeter-scale bulk crystals. In this work, we demonstrate direct electrical detection of antiferromagnetic resonance in structures on the few-micrometer scale using spin-filter tunneling in platinum ditelluride (PtTe 2 )/bilayer chromium sulfide bromide (CrSBr)/graphite junctions in which the tunnel barrier is the van der Waals antiferromagnet CrSBr. This sample geometry allows not only efficient detection but also electrical control of the antiferromagnetic resonance through spin-orbit torque from the PtTe 2 electrode. The ability to efficiently detect and control antiferromagnetic resonance enables detailed studies of the physics governing these high-frequency dynamics.
Silicon pn junction solar cells made with low-resistivity substrates show poorer performance than traditional theory predicts. The purpose of this research was to identify and characterize the physical mechanisms responsible for the discrepancy. Attention was concentrated on the open circuit voltage in shallow junction cells of 0.1 ohm-cm substrate resistivity. A number of possible mechanisms that can occur in silicon devices were considered. Two mechanisms which are likely to be of main importance in explaining the observed low values of open-circuit voltage were found: (1) recombination losses associated with defects introduced during junction formation, and (2) inhomogeneity of defects and impurities across the area of the cell. To explore these theoretical anticipations, various diode test structures were designed and fabricated and measurement configurations for characterizing the defect properties and the areal inhomogeneity were constructed.
A multijunction silicon solar cell of high efficiency is provided by providing a tunnel junction between the solar cell junctions to connect them in series. The tunnel junction is comprised of p+ and n+ layers of high band gap 3-5 or 2-6 semiconductor materials that match the lattice structure of silicon, such as GaP (band gap 2.24 eV) or ZnS (band gap 3.6 eV). Each of which has a perfect lattice match with silicon to avoid defects normally associated with lattice mismatch.
Improved design for thin, lightweight solar photovoltaic cells with front contacts reduces degradation of electrical output under exposure to energetic charged particles (protons and electrons). Increases ability of cells to maintain structural integrity under exposure to ultraviolet radiation by eliminating ultraviolet-degradable adhesives used to retain cover glasses. Interdigitated front contacts and front junctions formed on semiconductor substrate. Mating contacts formed on back surface of cover glass. Cover glass and substrate electrostatically bonded together.
Fabrication and testing of planar and edge geometry YBaCuO/Au/Nb superconductor/normal-metal/superconductor (SNS) device structures is described. Weak-link devices of this type serve as sensitive probes of the electrical quality of the YBaCuO/Au interface. The devices are fabricated using laser-ablated, in situ, c-axis-oriented YBaCuO thin films, with both annealed and unannealed YBaCuO/Au interfaces. The planar SNS structures are formed by sequential, in situ deposition of YBaCuO, Au, and Nb, followed by etching, planarization, and wiring electrode definition to produce junctions ranging from 5 to 20 micron on a side. Resulting RnA products are 1-10 x 10 to the -8th ohm-sq cm with critical current densities up to 5 kA/sq cm. For the edge geometry devices, the YBaCuO film edges are patterned using Ar ion milling, followed by a low energy ion cleaning step and in situ deposition of Au and Nb. Devices with areas in the 10 to the -7th to 10 to the -8th sq cm range have been fabricated with RnA products lower than 10 to the -8th ohm-sq cm and critical current densities up to 3kA/sq cm. Both types of devices show ac Josephson steps under microwave irradiation. The best results have been obtained with annealed YBaCuO/Au interfaces.
The simulation of flows presenting contact discontinuities, vorticity, and large variations in spatial scales can be performed in a framework coupling Arbitrary Lagrangian Eulerian (ALE) algorithms and Adaptive Mesh Refinement (AMR). This coupling requires adaptation of ALE rezoning techniques to meshes containing nonconformal nodes arising from both the AMR topology and the junction of mesh blocks. Here, in this paper, we present an ALE rezoning strategy that is compatible with such meshes, and that can also act as a disentangling algorithm. Emphasis is put on an algorithm that respects intrinsic Lagrangian mesh properties in order to preserve accuracy around discontinuities. To that end, we adapt the weighted linesweep algorithm to nonconformal block-structured AMR meshes. Then, we present control parameters introduced in the method for it to be applicable in practical situations. Notably, the method is coupled to a specific metric optimization in order to palliate some shortcomings of the linesweep method. Finally, numerical test cases are presented that feature the capabilities of the ALE-AMR algorithm for flows that present discontinuities, vorticity, and a variety of scales. Notably, we show that our ALE-AMR algorithm gives results at least similar to Euler-AMR, but provides better accuracy in cases where discontinuities are involved, thanks to a method that respects the Lagrangian features of the mesh. Additionally, it enables Euler-AMR-like computations on domains with temporally varying domain boundaries.
ZnBeO and ZnCdSeO alloys have been disclosed as materials for the improvement in performance, function, and capability of semiconductor devices. The alloys can be used alone or in combination to form active photonic layers that can emit over a range of wavelength values. Materials with both larger and smaller band gaps would allow for the fabrication of semiconductor heterostructures that have increased function in the ultraviolet (UV) region of the spectrum. ZnO is a wide band-gap material possessing good radiation-resistance properties. It is desirable to modify the energy band gap of ZnO to smaller values than that for ZnO and to larger values than that for ZnO for use in semiconductor devices. A material with band gap energy larger than that of ZnO would allow for the emission at shorter wavelengths for LED (light emitting diode) and LD (laser diode) devices, while a material with band gap energy smaller than that of ZnO would allow for emission at longer wavelengths for LED and LD devices. The amount of Be in the ZnBeO alloy system can be varied to increase the energy bandgap of ZnO to values larger than that of ZnO. The amount of Cd and Se in the ZnCdSeO alloy system can be varied to decrease the energy band gap of ZnO to values smaller than that of ZnO. Each alloy formed can be undoped or can be p-type doped using selected dopant elements, or can be n-type doped using selected dopant elements. The layers and structures formed with both the ZnBeO and ZnCdSeO semiconductor alloys - including undoped, p-type-doped, and n-type-doped types - can be used for fabricating photonic and electronic semiconductor devices for use in photonic and electronic applications. These devices can be used in LEDs, LDs, FETs (field effect transistors), PN junctions, PIN junctions, Schottky barrier diodes, UV detectors and transmitters, and transistors and transparent transistors. They also can be used in applications for lightemitting display, backlighting for displays, UV and visible transmitters and detectors, high-frequency radar, biomedical imaging, chemical compound identification, molecular identification and structure, gas sensors, imaging systems, and for the fundamental studies of atoms, molecules, gases, vapors, and solids.
Theoretical analysis and some experiments have shown that the silicon-on-insulator (SOI) 4-gate transistors known as G4-FETs can be used as building blocks of four-quadrant analog voltage multiplier circuits. Whereas a typical prior analog voltage multiplier contains between six and 10 transistors, it is possible to construct a superior voltage multiplier using only four G4-FETs. A G4-FET is a combination of a junction field-effect transistor (JFET) and a metal oxide/semiconductor field-effect transistor (MOSFET). It can be regarded as a single transistor having four gates, which are parts of a structure that affords high functionality by enabling the utilization of independently biased multiple inputs. The structure of a G4-FET of the type of interest here (see Figure 1) is that of a partially-depleted SOI MOSFET with two independent body contacts, one on each side of the channel. The drain current comprises of majority charge carriers flowing from one body contact to the other that is, what would otherwise be the side body contacts of the SOI MOSFET are used here as the end contacts [the drain (D) and the source (S)] of the G4-FET. What would otherwise be the source and drain of the SOI MOSFET serve, in the G4-FET, as two junction-based extra gates (JG1 and JG2), which are used to squeeze the channel via reverse-biased junctions as in a JFET. The G4-FET also includes a polysilicon top gate (G1), which plays the same role as does the gate in an accumulation-mode MOSFET. The substrate emulates a fourth MOS gate (G2). By making proper choices of G4-FET device parameters in conjunction with bias voltages and currents, one can design a circuit in which two input gate voltages (Vin1,Vin2) control the conduction characteristics of G4-FETs such that the output voltage (Vout) closely approximates a value proportional to the product of the input voltages. Figure 2 depicts two such analog multiplier circuits. In each circuit, there is the following: The input and output voltages are differential, The multiplier core consists of four G4- FETs (M1 through M4) biased by a constant current sink (Ibias), and The G4-FETs in two pairs are loaded by two identical resistors (RL), which convert a differential output current to a differential output voltage. The difference between the two circuits stems from their input and bias configurations. In each case, provided that the input voltages remain within their design ranges as determined by considerations of bias, saturation, and cutoff, then the output voltage is nominally given by Vout = kVin1Vin2, where k is a constant gain factor that depends on the design parameters and is different for the two circuits. In experimental versions of these circuits constructed using discrete G4- FETs and resistors, multiplication of voltages in all four quadrants (that is, in all four combinations of input polarities) was demonstrated, and deviations of the output voltages from linear dependence on the input voltages were found to amount to no more than a few percent. It is anticipated that in fully integrated versions of these circuits, the deviations from linearity will be made considerably smaller through better matching of devices.
Baryon numbers are theorized to be carried by valence quarks in the standard QCD picture of the baryon structure. Another theory proposed an alternative baryon number carrier, a non-perturbative Y-shaped configuration of the gluon field, called the baryon junction in the 1970s. However, neither of these theories has been verified experimentally. Recently, searching for the baryon junction by investigating the correlation of net-charge and net-baryon yields at midrapidity in heavy-ion collisions has been suggested. Here, this paper presents studies of such correlations in collisions of various heavy ions from oxygen to uranium with the UrQMD Monte Carlo model. The UrQMD model implements valence quark transport as the primary means of charge and baryon stopping at midrapidity. Detailed studies are also conducted for isobaric $_{40}^{96}{\rm{Zr}}$ + $_{40}^{96}{\rm{Zr}}$ and $_{44}^{96}{\rm{Ru}}$ + $_{44}^{96}{\rm{Ru}}$ collisions. We found a universal trend of charge stopping with respect to baryon stopping and discovered that the charge stopping is always greater than the baryon stopping. This study provides a model baseline in valence quark transport for what is expected in net-charge and net-baryon yields at the midrapidity of relativistic heavy-ion collisions.