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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 451 records · Page 25
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Modelling and control coordination scheme of a wind‐to‐hydrogen set for future renewable‐based power systems

New challenges regarding system stability and efficiency arise when power systems operate with a high penetration level of inverter‐based renewable sources (IBRSs) and few synchronous generators. Since IBRSs have been on the rise, to secure the stable operation of future power systems, IBRSs will be required to support systems without having to rely on remaining synchronous generators. Also, to efficiently manage the uncertainty of renewable production, power‐to‐gas technology can provide the required flexibility. This study proposes modelling and a control coordination scheme (CCS) of a wind‐to‐hydrogen (W2H) set to optimise electricity production from a variable‐speed wind turbine generator (WTG) while helping balance between supply and demand in a system. To achieve this, a grid‐forming (GFM) inverter‐based WTG is modelled and a set of electrolyser and fuel cell is integrated at the DC circuit of a GFM‐WTG to be coordinated. Furthermore, the CCS offers an opportunity to reduce the investment cost for deploying a W2H set by utilising the control capabilities of a WTG and reducing the need for an additional device. The performance of the proposed W2H set with the CCS was verified considering the variations in system load and wind speed by using Power System Computer Aided Design (PSCAD)/ElectroMagnetic Transients including Direct Current (EMTDC).

Kim, Jinho↗
DOE OSTI2024

Design considerations of series type hybrid circuit breaker (S‐HCB)

Abstract The series‐type direct current (DC) hybrid circuit breaker (S‐HCB) concept was previously reported to offer better performance than solid‐state circuit breakers (SSCB) and hybrid circuit breakers (HCB). S‐HCB offers low conduction power loss like an HCB and ‐scale interruption time, which is even faster than an SSCB. It uses a pulse transformer to isolate the lower‐voltage high‐inductance power electronic circuit from the high‐voltage, low‐inductance main power loop. This paper provides analysis of the impact of the S‐HCB circuit components on the overall system performance and a scalable S‐HCB design guide for different DC system voltage and current ratings. In addition, system energy flow analysis is performed in the time domain to provide an understanding of how energy is delivered, dissipated, and released throughout the entire fault interruption process. The S‐HCB prototype was experimentally tested at 3 kV/30 A and 6 kV/150A with the results showing the interruption of the low fault current of 30 A and the high fault current of 150 A within 8 and maintaining the fault current at a near zero value for 300 to enable an arcless opening of a series mechanical switch. The key design challenges of S‐HCB at high voltage and high current ratings were discussed and possible solutions to mitigate those challenges were introduced.

Alashi, Mahmoud↗
DOE OSTI2020

Intrinsic and extrinsic conduction contributions at nominally neutral domain walls in hexagonal manganites

Conductive and electrostatic atomic force microscopy (cAFM and EFM) are used to investigate the electric conduction at nominally neutral domain walls in hexagonal manganites. The EFM measurements reveal a propensity of mobile charge carriers to accumulate at the nominally neutral domain walls in ErMnO3, which is corroborated by cAFM scans showing locally enhanced direct current conductance. Our findings are explained based on the established segregation enthalpy profiles for oxygen vacancies and interstitials, providing a microscopic model for previous, seemingly disconnected observations ranging from insulating to conducting behavior. In addition, we observe variations in conductance between different nominally neutral walls that we attribute to deviations from the ideal charge-neutral structure within the bulk, leading to a superposition of extrinsic and intrinsic contributions. Our study clarifies the complex transport properties at nominally neutral domain walls in hexagonal manganites and establishes the possibility to tune their electronic response based on oxidation conditions, opening the door for domain-wall-based sensor technology.

Schultheiß, J. (ORCID:0000000173891295)↗
DOE OSTI2020

Sputter-deposited low-stress boron carbide films

Significant challenges have been faced in the manufacturing of low-stress B 4 C films. Here, we demonstrate a set of process parameters for direct-current magnetron sputter deposition of smooth, high-purity, amorphous B 4 C films with near-zero total residual stress and with thicknesses up to 10 μm. Films are characterized by a combination of high-energy ion scattering, x-ray diffraction, electron microscopy, and stress measurements based on substrate curvature. In order to facilitate the process transfer to other sputtering geometries, the favorable deposition conditions are correlated with distributions of landing energies and incident angles of depositing species estimated by Monte Carlo simulations of ballistic collisions and gas phase atomic transport. Based on such simulations, a decrease in compressive stress with increasing Ar working gas pressure is attributed to the corresponding broadening of the angular distribution of depositing species and associated atomic shadowing effects.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Comparison of 1D and 2D particle-in-cell simulations for DC magnetron sputtering discharges

One-dimensional and two-dimensional particle-in-cell (PIC)/Monte Carlo collision simulations are performed for a balanced direct current magnetron sputtering (DCMS) discharge. The plasma parameters obtained by both simulations above the target racetrack share similar features and magnitudes under similar discharge intensities, i.e., similar local discharge current densities. The commonly observed high-energy tail of electron energy distribution in DCMS discharges is reproduced in both simulations. Additionally, the accuracy and applicability of using onedimensional simulations to qualitatively investigate the characteristics of balanced DCMS discharge are confirmed. In terms of capturing the key physical mechanisms in DCMS, one-dimensional PIC simulation is an efficient method, which could largely alleviate the computational expense and preserve the physical fidelity of modeling results.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Structure and dynamical properties of two-dimensional dusty plasmas on one-dimensional periodic substrates

In the presence of the substrate, various structural and dynamical properties of two-dimensional dusty plasma (2DDP) were investigated using Langevin dynamical simulations. This paper reviews a series of results of the structural and dynamical properties of 2DDP modified by one-dimensional periodic substrates (1DPSs) as follows. First, when the depth of the 1DPS increases gradually, it is found that the static structural order of 2DDP along each potential well of the 1DPS increases first, and then decreases gradually. When the width of the 1DPS increases gradually, the particle arrangement in each potential well of the 1DPS changes from one straight row gradually to two rows, including the stable zigzag structure. Second, when there are two rows in each potential well of the 1DPS, the phonon spectra are split into two branches, corresponding to the breathing and sloshing modes, respectively. In addition, due to the pure repulsion between dust particles, from the obtained phonon spectra, the sloshing wave propagates backward at small wave numbers. Third, the calculated mean-square displacement (MSD) shown that, at the intermediate timescale between the initial ballistic and final diffusive motions, the particle motion tends to be more subdiffusive while the depth of the 1DPS increases. While the width of the 1DPS increases gradually, the long-time diffusive motion first increases, then decreases, and finally increases again, exhibiting the oscillation-like diffusion, due to the stable zigzag structure. Finally, when an external direct-current driving force is applied on all particles of 2DDP, three different depinning phases are discovered, which are the pinned, disordered plastic flow, and moving ordered states, respectively, as the driving force increases from zero. In addition, the continuous/discontinuous property of the phase transition between these different depinning states is investigated, showing that the transition property is modulated by the depth of the applied 1DPS

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2021

Radio frequency mixing modules for superconducting qubit room temperature control systems

As the number of qubits in nascent quantum processing units increases, the connectorized RF (radio frequency) analog circuits used in first generation experiments become exceedingly complex. The physical size, cost, and electrical failure rate all become limiting factors in the extensibility of control systems. We have developed a series of compact RF mixing boards to address this challenge by integrating I/Q quadrature mixing, intermediate frequency/LO (local oscillator)/RF power level adjustments, and direct current bias fine tuning on a 40 × 80 mm 2 four-layer printed circuit board with electromagnetic interference shielding. The RF mixing module is designed to work with RF and LO frequencies between 2.5 and 8.5 GHz. The typical image rejection and adjacent channel isolation are measured to be ~27 dBc and ~50 dB. By scanning the drive phase in a loopback test, the module short-term amplitude and phase linearity are typically measured to be 5 ×10 -4 (V pp /V mean ) and 1 ×10 -3 radian (pk-pk). The operation of the RF mixing board was validated by integrating it into the room temperature control system of a superconducting quantum processor and executing randomized benchmarking characterization of single and two qubit gates. We measured a single-qubit process infidelity of 9.3(3) × 10 -4 and a two-qubit process infidelity of 2.7(1) × 10 -2 .

47 OTHER INSTRUMENTATION↗
DOE OSTI2021

Oblique angle deposition of boron carbide films by magnetron sputtering

Many applications of boron carbide (B4C) films entail deposition on non-planar substrates, necessitating a better understanding of oblique angle deposition phenomena. Here, we systematically study the effect of substrate tilt on properties of B 4 C films with thicknesses up to 10 μm deposited by direct current magnetron sputtering. Results show that all films are amorphous and columnar with an average column width of ~100 nm, independent of substrate tilt. Column tilt angles are limited to ~20° even for substrate tilt of 80°. Film density, residual stress, and the refractive index weakly (within ≲20%) depend on substrate tilt. Furthermore, oxygen impurities bond preferentially with carbon atoms in inter-columnar regions. Substrate tilt has a major effect on mechanical properties that decrease by ~50%, suggesting weak interconnection between nano-columns. Implications of these observations for the deposition onto non-planar substrates are discussed.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Effect of substrate temperature on sputter-deposited boron carbide films

Sputter deposition of B4C films with tailored physical properties remains a challenge. Here, we systematically study how substrate temperature influences the properties of B4C films deposited by direct current magnetron sputtering onto planar substrates held at temperatures in the range of 100-510°C. Results show that all films are amorphous stoichiometric B4C, with low O content of ~1 at. %. Films deposited onto substrates at 100°C exhibit high compressive residual stress and decreased mechanical properties. Therefore, for elevated substrate temperatures in the range of 180-510°C, film mass density, surface roughness, Young’s modulus, and hardness are weakly dependent on substrate temperature. However, in this temperature range, an increase in substrate temperature leads to larger residual compressive stress accompanied by a corresponding reduction in the concentration of nanoscale inhomogeneities. At least for the landing atom ballistics conditions studied here, a substrate temperature range of ~185-250°C is optimum for growing films with near-zero intrinsic residual stress. The overall weak substrate temperature dependence of film properties revealed in this work is favorable for the development of a robust deposition process, particularly for the case of deposition onto non-planar substrates where temperature control is often challenging.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Single-beam plasma source deposition of carbon thin films

A single-beam plasma source was developed and used to deposit hydrogenated amorphous carbon (a-C:H) thin films at room temperature. The plasma source was excited by a combined radio frequency and direct current power, which resulted in tunable ion energy over a wide range. The plasma source could effectively dissociate the source hydrocarbon gas and simultaneously emit an ion beam to interact with the deposited film. Using this plasma source and a mixture of argon and C 2 H 2 gas, a-C:H films were deposited at a rate of ~26 nm/min. The resulting a-C:H film of 1.2 µm thick was still highly transparent with a transmittance of over 90% in the infrared range and an optical bandgap of 2.04 eV. Young’s modulus of the a-C:H film was ~80 GPa. The combination of the low-temperature high-rate deposition of transparent a-C:H films with moderately high Young’s modulus makes the single-beam plasma source attractive for many coatings applications, especially in which heat-sensitive and soft materials are involved. Here, the single-beam plasma source can be configured into a linear structure, which could be used for large-area coatings.

14 SOLAR ENERGY↗
DOE OSTI2022

Reactive co-sputtering of ternary Au–Ta–O films with tunable electrical resistivity

Heavy-metal-based films with high electrical resistivity are needed for hohlraums for magnetically-assisted inertial confinement fusion. Here, we study ternary Au-Ta-O films deposited by reactive direct-current magnetron co-sputtering from elemental Au and Ta targets in an oxygen containing atmosphere. By varying O content, the electrical resistivity of films can be tuned in a wide range of ~ 100 - 40,000 μΩ cm. With increasing O content, a drastic increase in resistivity occurs at ~ 45 at.% of O, separating regimes with two different dominant conduction mechanisms attributed to metallic conduction through the Au-Ta alloy matrix (for ≲ 45 at.% of O) and tunneling across insulating Ta 2 O 5 layers separating conducting islands (for ≳ 45 at.% of O). Post-deposition annealing at 300 °C leads to the segregation of Au into ~ 50-nm islands, sharply decreasing the resistivity for films with ≳ 45 at.% of O but not for the metal-like films with lower O content.

36 MATERIALS SCIENCE↗
DOE OSTI2022

A reaction mechanism for plasma electrolysis of AgNO 3 forming silver nanoclusters and nanoparticles

In plasma-driven solution electrolysis (PDSE), gas-phase plasma-produced species interact with an electrolytic solution to produce, for example, nanoparticles. An atmospheric pressure plasma jet (APPJ) directed onto a liquid solution containing a metallic salt will promote reduction of metallic ions in solution, generating metallic clusters that nucleate to form nanoparticles. In this article, results from a computational investigation are discussed of a PDSE process in which a radio-frequency APPJ sustained in helium impinges on a silver nitrate solution, resulting in growth of silver nanoparticles. A reaction mechanism was developed and implemented in a global plasma chemistry model to predict nanoparticle growth. To develop the reaction mechanism, density functional theory was used to generate probable silver growth pathways up to Ag 9 . Neutral clusters larger than Ag 9 were classified as nanoparticles. Kinetic reaction rate coefficients for thermodynamically favorable growth pathways were estimated based on an existing, empirically determined base reaction mechanism for smaller Ag particle interactions. These rates were used in conjunction with diffusion-controlled reaction rate coefficients that were calculated for other Ag species. The role of anions in reduction of Agn ions in forming nanoparticles is also discussed. Oxygen containing impurities or admixtures to the helium, air entrainment into the APPJ, and dissociation of saturated water vapor above the solution can produce additional reactive oxygen species in solution, resulting in the production of anions and O 2 – in particular. For a given molarity, delivering a sufficient fluence of reducing species will produce similar nanoparticle densities and sizes for all applied power levels. In conclusion, comparisons are made to alternate models for nanoparticle formation, including charged nanoparticles and use of direct current plasmas.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Magnetron sputter deposition of boron carbide in Ne and Ar plasmas

Conventional magnetron sputter deposition of B 4 C uses Ar as the working gas. In this report we explore the magnetron sputter deposition of B 4 C with a Ne plasma, which is expected to exhibit larger sputtering yields than Ar. We study properties of films deposited with different substrate tilt angles with the magnetron source operated in either direct-current (DC) or radio-frequency (RF) mode in an Ar or Ne plasma. Results show that the B 4 C film properties are determined by a combination of sputtering ballistics and effects of the working gas on the plasma discharge and gas phase scattering of depositing species flux. At constant discharge power, deposition rates for Ar and Ne plasmas are similar, which is attributed to balancing effects of a higher ballistic sputtering yield of Ne and lower ion flux to the target. Both depositing B and C neutral species and bombarding ions have higher energies for the case of Ne plasmas. Films deposited with the RF-driven Ne plasma exhibit a uniform non-columnar structure, lowest oxygen impurity content, and highest mass density and mechanical properties at a cost of Ne incorporation and larger compressive residual stress.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Hysteresis between gas breakdown and plasma discharge

In direct-current (DC) discharge, it is well known that hysteresis is observed between the Townsend (gas breakdown) and glow regimes. Forward and backward voltage sweep is performed using a one-dimensional particle-in-cell Monte Carlo collision (PIC-MCC) model considering a ballast resistor. When increasing the applied voltage after reaching the breakdown voltage (V b ), transition from Townsend to glow discharges is observed. When decreasing the applied voltage from the glow regime, the discharge voltage (V d ) between the anode–cathode gap can be smaller than the breakdown voltage, resulting in a hysteresis, which is consistent with experimental observations. Next, the PIC-MCC model is used to investigate the self-sustaining voltage (V s ) in the presence of finite initial plasma densities between the anode and cathode gap. It is observed that the self-sustaining voltage coincides with the discharge voltage obtained from the backward voltage sweep. In addition, the self-sustaining voltage decreases with increased initial plasma density and saturates above a certain initial plasma density, which indicates a change in plasma resistivity. The decrease in self-sustaining voltage is associated with the electron heat loss at the anode for the low pd (rarefied) regime. In the high pd (collisional) regime, the ion energy loss toward the cathode due to the cathode fall and the inelastic collision loss of electrons in the bulk discharge balance out. Finally, it is demonstrated that the self-sustaining voltage collapses to a singular value, despite the presence of a initial plasma, for microgaps when field emission is dominant, which is also consistent with experimental observations.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

Review of the second charged-particle transport coefficient code comparison workshop

We report the results of the second charged-particle transport coefficient code comparison workshop, which was held in Livermore, California on 24–27 July 2023. This workshop gathered theoretical, computational, and experimental scientists to assess the state of computational and experimental techniques for understanding charged-particle transport coefficients relevant to high-energy-density plasma science. Data for electronic and ionic transport coefficients, namely, the direct current electrical conductivity, electron thermal conductivity, ion shear viscosity, and ion thermal conductivity were computed and compared for multiple plasma conditions. Additional comparisons were carried out for electron–ion properties such as the electron–ion equilibration time and alpha particle stopping power. Overall, 39 participants submitted calculated results from 18 independent approaches, spanning methods from parameterized semi-empirical models to time-dependent density functional theory. In the cases studied here, we find significant differences—several orders of magnitude—between approaches, particularly at lower temperatures, and smaller differences—roughly a factor of five—among first-principles models. We investigate the origins of these differences through comparisons of underlying predictions of ionic and electronic structure. The results of this workshop help to identify plasma conditions where computationally inexpensive approaches are accurate, where computationally expensive models are required, and where experimental measurements will have high impact.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

High-intensity polarized electron gun featuring distributed Bragg reflector GaAs photocathode

The polarized electron source is a critical component in accelerator facilities such as the electron–ion collider, which requires a polarized electron gun with higher voltage and higher bunch charge than existing sources. One challenge we faced was the surface charge limit of the distributed Bragg reflector GaAs/GaAsP superlattice (DBR-SL-GaAs) photocathode. We suppressed this effect by optimizing the surface doping and heat cleaning procedures. We achieved up to 11.6 nC bunch charge of polarized electron beam. In this report, we discuss the performance of tests of a DBR-SL-GaAs photocathode in the high voltage direct current gun. Possible reasons for the observed peak quantum efficiency wavelength shift are analyzed, and we addressed it by using a wavelength tunable laser. In addition, the impact of the DBR layer and laser on the lifetime is investigated in this paper. The optimal DBR-SL-GaAs operating zone has been proposed, which gave us a long lifetime and high polarization at 30 μA operation. Finally, the success of this polarized gun will be key to the future of the nuclear sciences.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2025

Interface instabilities in hafnium hydride entrained iron metal matrix composites

The chemical interactions in Fe–HfH 2 metal matrix composites (MMCs) are studied across multiple length scales to elucidate the decomposition of the parent phases and corresponding reaction zone physics during direct current sintering. Fe–HfH 2 composites were synthesized with increasing as-mixed hydride contents of Fe–25% HfH 2 , Fe–40% HfH 2 , Fe–55% HfH 2 , and Fe–70% HfH 2 (all in vol. %) to demonstrate the ability to achieve sintered MMCs with target hydride contents. Samples were probed across multiple length scales through a multi-modal workflow employing x-ray diffraction, scanning electron microscopy and segmentation analysis, and synchrotron techniques including hard x-ray fluorescence mapping and nanoprobe x-ray absorption near-edge structure measurements. Under the selected sintering temperature and pressure conditions, hydrogen evolution is seen to evolve through parallel paths: thermal decomposition from during the transformation of HfH 2 to HfH x<2 and through subsequent reaction with the Fe matrix leading to intermetallic phase formation. Specifically, HfFe and HfFe 2 intermetallic formation accelerates the release of hydrogen with a subsequent HfO 2 phase forming at grain boundaries. For this MMC, the consumption or loss of hydrogen can be considerable in compacts with initial hydride loading of 25%–40% HfH 2 approaching 83% hydrogen loss for the lower volume fraction composites. Increasing the volume fraction of HfH 2 to 70% enhanced the retained hydrogen content to 53% and attributed to the reduced interfacial area intrinsic to the increased HfH 2 loading in this MMC.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Effects of hydrogen on sputter-deposited boron carbide films

Sputter deposition of B 4 C films requires precise control over the microstructure and the nucleation and growth of nodular defects. Here, we study the properties of B 4 C films deposited with substrate holder temperatures of 250, 450, or 510 °C and different substrate tilt angles by direct-current magnetron sputtering in either pure Ar or a mixture of 4% H 2 in Ar as the working gas. Results show that the addition of H 2 reduces the impedance of the plasma discharge, resulting in larger discharge currents at constant power, which is attributed to a lower ionization potential of H 2 than Ar. More importantly, films deposited with the H 2 containing plasma exhibit lower oxygen impurity incorporation, a lower density of nodular defects, and suppressed columnar microstructure. These results demonstrate the effectiveness of such a plasma doping approach to improve the properties of B 4 C films.

Wong, M. S. [Lawrence Livermore National Laborator↗