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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 451 records · Page 25

Investigation of Fiber Optics Based Phased Locked Diode Lasers

Optical power beaming requires a high intensity source and a system to address beam phase and location. A synthetic aperture array of phased locked sources can provide the necessary power levels as well as a means to correct for phase errors. A fiber optic phase modulator with a master oscillator and power amplifier (MOPA) using an injection-locking semiconductor optical amplifier has proven to be effective in correcting phase errors as large as 4pi in an interferometer system. Phase corrections with the piezoelectric fiber stretcher were made from 0 - 10 kHz, with most application oriented corrections requiring only 1 kHz. The amplifier did not lose locked power output while the phase was changed, however its performance was below expectation. Results of this investigation indicate fiber stretchers and amplifiers can be incorporated into a MOPA system to achieve successful earth based power beaming.

Burke, Paul D.↗

A follow-on study for miniature solid-state pressure transducer

The activities of a developmental program to design, fabricate and test an absolute pressure transducer based upon the piezojunction properties of silicon are summarized. The prime problem addressed is the development of a housing capable of applying the high stress levels needed for sensitive piezojunction operation but at the same, free from the creep effects and the fragility that limit the usefulness of previous designs. The first part of the report describes the initial fabrication and test and reviews the theory of sensor performance. The second part incorporates two recommendations of the first part (the use of commercially manufactured silicon planar mesa diodes and the adoption of an all-silicon structure for loading) and presents some preliminary test data on the transducers thus fabricated. These initial measurements show much improved performance over any previously fabricated piezojunction transducers but testing is incomplete and several problems in manufacturing technology remain.

Source record↗

An improved push-pull voltage fed converter using a tapped output-filter inductor

A new concept of using a tapped output-filter inductor and an auxiliary commutating diode to reduce the likelihood of transformer core saturation in a push-pull, voltage-fed converter is presented. The linearized circuit model and transfer functions are derived with a hybrid approach using both state-space and circuit averaging. Operation of the new converter - including parasitic effects - is discussed, and a design equation for inductor tap ratio is established. It is predicted and experimentally confirmed that the new converter has more symmetrical transformer core operation, and the potential exits for lower transistor turnon current and reduced transistor voltage stress. These benefits reduce switching loss and enhance transistor reliability.

Wester, G. W.↗

The role of amplitude-to-phase conversion in the generation of oscillator flicker phase noise

The role of amplitude-to-phase conversion as a factor in feedback oscillator flicker phase noise is examined. A limiting stage consisting of parallel-connected opposite polarity diodes operating in a circuit environment contining reactance is shown to exhibit amplitude-to-phase conversion. This mechanism coupled with resistive upconversion provides an indirect route for very low frequency flicker noise to be transferred into the phase of an oscillator signal. It is concluded that this effect is more significant in the lower frequency regimes where the onlinear reactances associated with active devices are overwhelmed by linear reactive elements.

Hearn, C. P.↗

Transient gain-versus-absorption laser probing of spin-orbit states, kinetics and dynamics

The spin-orbit populations of excited (2P1/2) and ground (2P3/2) state Br atoms at 2714 nm and I atoms at 1315 nm are examined using a tunable F-center laser and a diode laser. The transient laser gain-versus-absorption measurements are utilized to estimate quantum yields of the spin-orbit states in the photodissociation of Br- and I-containing compounds; the continuum yields for Br2 are investigated in terms of temperature. The collisional release, Doppler velocity effects, and differing reactivity of the spin-orbit excited and ground state atoms are studied. It is noted that the transient gain versus absorption technique is applicable to the analysis of kinetic phenomena due to its high sensitivity and excellent time resolution.

Smedley, John E.↗

Study of Bulk and Elementary Screw Dislocation Assisted Reverse Breakdown in Low-Voltage (less than 250 V) 4H-SiC p(+)n Junction diodes: DC Properties - Part 1

Given the high density (approx. 10(exp 4)/sq cm) of elementary screw dislocations (Burgers vector = 1c with no hollow core) in commercial SiC wafers and epilayers, all appreciable current (greater than 1 A) SiC power devices will likely contain elementary screw dislocations for the foreseeable future. It is therefore important to ascertain the electrical impact of these defects, particularly in high-field vertical power device topologies where SiC is expected to enable large performance improvements in solid-state high-power systems. This paper compares the DC-measured reverse-breakdown characteristics of low-voltage (less than 250 V) small-area (less than 5 x 10(exp -4)/sq cm) 4H-SiC p(+)n diodes with and without elementary screw dislocations. Compared to screw dislocation-free devices, diodes containing elementary screw dislocations exhibited higher pre-breakdown reverse leakage currents, softer reverse breakdown I-V knees, and highly localized microplasmic breakdown current filaments. The observed localized 4H-SiC breakdown parallels microplasmic breakdowns observed in silicon and other semiconductors, in which space-charge effects limit current conduction through the local microplasma as reverse bias is increased.

Neudeck, Philip G.↗

Study of Bulk and Elementary Screw Dislocation Assisted Reverse Breakdown in Low-Voltage (<250 V) 4H-SiC p+n Junction Diodes - Part 1: DC Properties

Given the high density (approx. 10(exp 4)/sq cm) of elementary screw dislocations (Burgers vector = lc with no hollow core) in commercial SiC wafers and epilayers, all appreciable current (greater than 1 A) SiC power devices will likely contain elementary screw dislocations for the foreseeable future. It is therefore important to ascertain the electrical impact of these defects, particularly in high-field vertical power device topologies where SiC is expected to enable large performance improvements in solid-state high-power systems. This paper compares the DC-measured reverse-breakdown characteristics of low-voltage (less than 250 V) small-area (less than 5 x 10(exp -4) sq cm) 4H-SiC p(+)n diodes with and without elementary screw dislocations. Compared to screw dislocation-free devices, diodes containing elementary screw dislocations exhibited higher pre-breakdown reverse leakage currents, softer reverse breakdown I-V knees, and highly localized microplasmic breakdown current filaments. The observed localized 4H-SiC breakdown parallels microplasmic breakdowns observed in silicon and other semiconductors, in which space-charge effects limit current conduction through the local microplasma as reverse bias is increased.

Neudeck, Philip G.↗

Laser Materials Processing for NASA's Aerospace Structural Materials

Lasers are useful for performing operations such as joining, machining, built-up freeform fabrication, and surface treatment. Due to the multifunctional nature of a single tool and the variety of materials that can be processed, these attributes are attractive in order to support long-term missions in space. However, current laser technology also has drawbacks for space-based applications. Specifically, size, power efficiency, lack of robustness, and problems processing highly reflective materials are all concerns. With the advent of recent breakthroughs in solidstate laser (e.g., diode-pumped lasers) and fiber optic technologies, the potential to perform multiple processing techniques in space has increased significantly. A review of the historical development of lasers from their infancy to the present will be used to show how these issues may be addressed. The review will also indicate where further development is necessary to realize a laser-based materials processing capability in space. The broad utility of laser beams in synthesizing various classes of engineering materials will be illustrated using state-of-the art processing maps for select lightweight alloys typically found on spacecraft. Both short- and long-term space missions will benefit from the development of a universal laser-based tool with low power consumption, improved process flexibility, compactness (e.g., miniaturization), robustness, and automation for maximum utility with a minimum of human interaction. The potential advantages of using lasers with suitable wavelength and beam properties for future space missions to the moon, Mars and beyond will be discussed. The laser processing experiments in the present report were performed using a diode pumped, pulsed/continuous wave Nd:YAG laser (50 W max average laser power), with a 1064 nm wavelength. The processed materials included Ti-6AI-4V, Al-2219 and Al-2090. For Phase I of this project, the laser process conditions were varied and optimized to see the effects on melt-quenching, cladding/alloying (using the pre-placed powder technique), and cutting. Key parameters such laser power, pulse repetition frequency, process speed, and shield gas flow and the observed process characteristics such as plasma formation during laser/material interaction, have been reported for all experimental runs. Preliminary materials characterization of select samples was carried out using various microscopy, diffraction, spectroscopy and microhardness test methods, and reported. Select nitridation results of Ti-6AI-4V using nitrogen assist gas indicated the successful formation of hard titanium nitrides with much higher hardness (2180 kg/sq mm). A cost-effective and simple powder delivery system has been successfully fabricated for the further experimentation in Phase H.

Nagarathnam, Karthik↗

Near-infrared Reflectance of Rocks at high Temperature: Preliminary Results and Implications for Near-infrared Emissivity of Venus's Surface

Light emitted from Venus’s surface can be viewed through spectral “windows” in its atmosphere, in the nearinfrared (NIR) around 1000 nanometer (nm) wavelengths. The NIR emissivity of Venus’s surface can constrain rock types and their weathering state; emissivities can be measured directly or calculated from reflectances. We measured the reflectances of igneous and sedimentary rocks at Venus’s surface temperature, 400 °C–500 °C at 850 and 950 nm; samples were heated in a box furnace in air, illuminated by light-emitting diodes (LEDs), and imaged with a modified charge-coupled device (CCD) camera. Reflectances were also measured at 25 °C from 350 to 1400 nm. Rock reflectances at 850 and 950 nm and 400 °C–500 °C are nearly identical to those at 25 °C, except for the effects of nanophase hematite forming on some surfaces. Fresh basalts have reflectances (high and low temperatures) near 7.5%; a leucogranite similarly has reflectances near 50%. Pigmentary hematite has nearly identical reflectances at high- and low-temperature at these wavelengths. Pigmentary hematite appears dark brown 400 °C–500 °C because its absorption edge has shifted to beyond the limit of human vision. These rock reflectances imply that basalts should have emissivities near 0.9, and granite (and similar felsic rocks) should have lower emissivities ∼0.5. Thus, basalt and felsic rock should be easily distinguished in NIR emissivity measurements of Venus’s surface, such as are baselined in recent Venus mission proposals. Other sedimentary rocks should have even lower emissivities: quartz sand at around ∼0.3, and anhydrite as low as 0.1.

Allan H Treiman↗

Investigation of conductive thermal control coatings by a contactless method in vacuo

A technique for determining the conductance per unit area of thermal control coatings for electrostatically clean spacecraft is described. In order to simulate orbital conditions more closely, current-density-voltage (j-V) curves are obtained by a contactless method in which the paint on an aluminum substrate is the anode of a vacuum diode configuration with a tungsten filament cathode. Conductances per unit area which satisfy the International Sun Earth Explorer (ISEE) requirement were observed on black paints containing carbon and in white and green paints filled with zinc oxide which were fired in order to induce defect conductivity. Because of surface effects and the nonhomogeneous nature of paints, large discrepancies were found between measurements with the contactless method and measurements employing metallic contacts, particularly at low current densities. Therefore, measurements with metallic contacts are considered to be of questionable value in deciding the suitability of coatings for electrostatic charge control.

Viehmann, W.↗

Heat transfer, thermal control, and heat pipes

This volume provides information on recent progress in spacecraft thermal control and the supporting disciplines of conduction, thermal radiation, and heat pipe theory and application. Four problem areas are considered: conduction heat transfer, radiation heat transfer, thermal control, and heat pipes. The topics covered include finite-element methodology for transient conduction/forced-convection thermal analysis; effects of surface finish on thermal contact resistance between different materials; mathematical models for wide-band nongray gas radiation in spherical and cylindrical geometries; thermal design, analysis and testing of the Shuttle remote manipulator arm; porous heat pipe; and transient behavior of liquid trap heat-pipe thermal diodes. Also discussed is the thermal design concept for a high-resolution UV spectrometer.

Olstad, W. B.↗

Initial MPTS study results: Design considerations and issues

One of the key issues identified during investigations of microwave power transmission systems from 1965 to 1976 was the need to assure that the billions of diodes on ground-based rectennas are sufficiently reliable to support long life times of approximately 30 years. Major systems studies conducted focused on waveguides; radio frequency interference and biological considerations; the relationship between performance, weight, and cost; risk assessment; crossed field directional amplifier noise; a 48 kW klystron; effects of the environment on propagation and phase control; rectenna technology; a rationale for the ground power density region; alternate technologies for orbital assembly; ionospheric effects and phase control; and reception conversion (rf to dc collector/converter).

Maynard, O. E.↗

Temperature stability of transit time delay for a single-mode fibre in a loose tube cable

The effect of temperature on the transit-time delay of a loose-tube-type single-mode optical-fiber cable is investigated experimentally. A 1058-m length of cable was placed loosely coiled in an oven and used to connect a 820-nm single-mode laser diode to a high-speed avalanche-photodiode detector feeding a vector voltmeter; the signal was provided by a high-stability frequency-synthesized generator. Measurements were made every 2 C from -50 to 60 C and compared to those obtained with a 200-m lacquered bare fiber. The phase change of both fibers varied with temperature at a positive slope of 6-7 ppm/C. This value is significantly better than those reported for other cable types, suggesting the application of loose-fiber cables to long-haul gigabit digital transmissions or precision time-base distribution for VLBI.

Bergman, L. A.↗

High-peak-power low-threshold AlGaAs/GaAs stripe laser diodes on Si substrates grown by migration-enhanced molecular beam epitaxy

A high-peak-power low-threshold AlGaAs/GaAs double-heterostructure stripe laser diode on Si substrats, grown by hybrid migration-enhanced molecular beam epitaxy (MEMBE) and metalorganic chemical vapor deposition (MOCVD) has been demonstrated for the first time. These devices showed the highest peak powers of up to 184 mW per facet reported so far for double-heterostructure stripe laser diodes on Si substrates, room-temperature pulsed threshold currents as low as 150 mA, and differential quantum efficiencies as high as 30 percent without mirror facet coating. An intrinsic threshold current density has been estimated to be about 2 kA/sq cm when taking current spreading and lateral diffusion effects into account. Low dislocation density shows that MEMBE can be a useful method to grow high-quality GaAs and AlGaAs/GaAs layers on Si substrates by combining with MOCVD.

Kim, Jae-Hoon↗

LDEF active optical system components experiment

A preliminary report on the Active Optical System Components Experiment is presented. This experiment contained 136 components in a six inch deep tray including lasers, infrared detectors and arrays, ultraviolet light detectors, light-emitting diodes, a light modulator, flash lamps, optical filters, glasses, and samples of surface finishes. Thermal, mechanical, and structural considerations leading to the design of the tray hardware are discussed. In general, changes in the retested component characteristics appear as much related to the passage of time as to the effects of the space environment, but organic materials, multilayer optical interference filters, and extreme-infrared reflectivity of black paints show unexpected changes.

M D Blue↗

Hydrogen Sensors Demonstrated on the Shuttle

Microelectromechanical-systems- (MEMS-) based hydrogen sensor technology developed by the NASA Glenn Research Center at Lewis Field and Case Western Reserve University was demonstrated on shuttle missions STS-95 (Senator Glenn s mission) and STS-96. These smart sensors, commercialized by Makel Engineering Inc., were part of an "Integrated Vehicle Health Monitoring HEDS Technology Demonstration" series conducted at the NASA Kennedy Space Center. The experiments were designed to demonstrate the effect of technological upgrades on shuttle performance. The hydrogen sensors were micro-fabricated for minimal size, weight, and power consumption. A temperature detector and heater were included on the sensor for temperature control. Two palladium chrome (PdCr) hydrogen detection devices were included in each sensor package: a Schottky diode for low concentrations and a resistor for high concentrations. These sensor designs allow operation in inert environments. "Smart" electronics developed by Makel Engineering were integrated with the sensors to control the sensor temperature and process the output of the various sensors. This complete hydrogen detection system (two sensors on a chip with smart electronics) flew on STS-95 (launched October 1998) and STS-96 (launched May 1999). It was installed in the aft compartment of the shuttle and used to monitor the hydrogen concentration in that region. Up to this time, a mass spectrometer had monitored the hydrogen concentration in the aft compartment before launch, and "grab" bottles had been used after launch. The inside of these bottles is at vacuum. During flight, the grab bottles are pyrotechnically opened for a brief period, and the gas in the aft compartment is captured in the bottle. Several of these bottles are opened at different times during takeoff, and their contents are used to determine the time profile of the gases in the aft chamber. However, this information is not available until after the flight. On the launch pad, results from the new sensor technology paralleled the responses of the mass spectrometer with, in some cases, a quicker response time. In flight, data from the new sensors agreed with those derived from analyzing the contents of the grab bottles. Moreover, this microsensor can monitor the aft compartment continuously and, in principle, could monitor the health of the vehicle in real time during flight.

Hunter, Gary W.↗

Studies of silicon p-n junction solar cells

To provide theoretical support for investigating different ways to obtain high open-circuit voltages in p-n junction silicon solar cells, an analytical treatment of heavily doped transparent-emitter devices is presented that includes the effects of bandgap narrowing, Fermi-Dirac statistics, a doping concentration gradient, and a finite surface recombination velocity at the emitter surface. Topics covered include: (1) experimental determination of bandgap narrowing in the emitter of silicon p-n junction devices; (2) heavily doped transparent regions in junction solar cells, diodes, and transistors; (3) high-low-emitter solar cell; (4) determination of lifetimes and recombination currents in p-n junction solar cells; (5) MOS and oxide-charged-induced BSF solar cells; and (6) design of high efficiency solar cells for space and terrestrial applications.

Neugroschel, A.↗