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At least 451 records · Page 25

Domain wall-magnetic tunnel junction spin–orbit torque devices and circuits for in-memory computing

There are pressing problems with traditional computing, especially for accomplishing data-intensive and real-time tasks, that motivate the development of in-memory computing devices to both store information and perform computation. Magnetic tunnel junction memory elements can be used for computation by manipulating a domain wall, a transition region between magnetic domains, but the experimental study of such devices has been limited by high current densities and low tunnel magnetoresistance. Here, we study prototypes of three-terminal domain wall-magnetic tunnel junction in-memory computing devices that can address data processing bottlenecks and resolve these challenges by using perpendicular magnetic anisotropy, spin–orbit torque switching, and an optimized lithography process to produce average device tunnel magnetoresistance TMR = 171% and average resistance-area product RA = 29 Ω μm2, close to the RA of the unpatterned film. Device initialization variation in switching voltage is shown to be curtailed to 7%–10% by controlling the domain wall initial position, which we show corresponds to 90%–96% accuracy in a domain wall-magnetic tunnel junction full adder simulation. Repeatability of writing and resetting the device is shown. A circuit shows an inverter operation between two devices, showing that a voltage window is large enough, compared to the variation noise, to repeatably operate a domain wall-magnetic tunnel junction circuit. These results make strides in using magnetic tunnel junctions and domain walls for in-memory and neuromorphic computing applications.

Alamdar, Mahshid (ORCID:0000000221732935)↗

Steep-slope field-effect transistors with AlGaN/GaN HEMT and oxide-based threshold switching device

We report the demonstration of a steep-slope field-effect transistor with AlGaN/GaN MIS-HEMTs employing SiO 2 -based threshold switching devices in series with the source. The SiO 2 -based threshold switching devices exhibited steep slope when changing resistance states. The integrated steep-slope transistor showed a low subthreshold swing of sub-5 mV/dec with a transition range of over 10 5 in the transfer characteristics in both sweep directions at room temperature, as well as the low leakage current (10 -5 μA μm -1 ) and a high I ON /I OFF ratio (>10 7 ). Moreover, with the SiO 2 -based threshold switching devices we also observed a positive shift of threshold voltages of the integrated device. Results from more than 50 transfer characteristics measurements also indicate the good repeatability and practicability of such a steep-switching device, where the average steep slopes are below 10 mV/decade. In conclusion, this steep-slope transistor with oxide-based threshold switching devices can be further extended to various transistor platforms like Si and III–V and are of potential interest for the development of power switching and high frequency devices.

36 MATERIALS SCIENCE↗

Electric current paths in a Si:P delta-doped device imaged by nitrogen-vacancy diamond magnetic microscopy

The recently-developed ability to control phosphorous-doping of silicon at an atomic level using scanning tunneling microscopy, a technique known as atomic precision advanced manufacturing (APAM), has allowed us to tailor electronic devices with atomic precision, and thus has emerged as a way to explore new possibilities in Si electronics. In these applications, critical questions include where current flow is actually occurring in or near APAM structures as well as whether leakage currents are present. In general, detection and mapping of current flow in APAM structures are valuable diagnostic tools to obtain reliable devices in digital-enhanced applications. In this report, we used nitrogen-vacancy (NV) centers in diamond for wide-field magnetic imaging (with a few-mm field of view and micron-scale resolution) of magnetic fields from surface currents flowing in an APAM test device made of a P delta-doped layer on a Si substrate, a standard APAM witness material. We integrated a diamond having a surface NV ensemble with the device (patterned in two parallel mm-sized ribbons), then mapped the magnetic field from the DC current injected in the APAM device in a home-built NV wide-field microscope. The 2D magnetic field maps were used to reconstruct the surface current densities, allowing us to obtain information on current paths, device failures such as choke points where current flow is impeded, and current leakages outside the APAM-defined P-doped regions. Analysis on the current density reconstructed map showed a projected sensitivity of ~0.03 A m -1 , corresponding to a smallest-detectable current in the 200 μm wide APAM ribbon of ~6 μA. These results demonstrate the failure analysis capability of NV wide-field magnetometry for APAM materials, opening the possibility to investigate other cutting-edge microelectronic devices.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Drift-Diffusion Modeling of the Effects of Structural Disorder and Carrier Mobility on the Performance of Organic Photovoltaic Devices

We probe the effects of structural disorder on the performance of organic photovoltaic (OPV) devices via drift-diffusion modeling. Here, we utilize ensembles of spatially disordered one-dimensional mobility profiles to approximate the three-dimensional structural disorder present in actual devices. Each replica in our ensemble approximates one high-conductivity pathway through the three-dimensional network(s) present in a polymer-based bulk heterojunction solar cell, so that the ensemble-averaged behavior provides a good approximation to a full three-dimensional structurally disordered device. Our calculations show that the short-circuit current, fill factor, and power conversion efficiency of simulated devices are all negatively impacted by the inclusion of structural disorder, but that the open-circuit voltage is nearly impervious to structural defects. This is in contrast to energetic disorder, where previous studies found that spatial variation in the energy in OPV active layers causes a decrease in the open-circuit voltage. We also show that structural disorder causes the greatest detriment to device performance for feature sizes between 2 and 10 nm. Since this is on the same length scale as the fullerene crystallites in experimental devices, it suggests both that controlling structural disorder is critical to the performance of OPV devices and that the effects of structural disorder should be included in future drift-diffusion modeling studies of organic solar cells.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Vulnerability Studies Under EMP: Impedance and PCI Testing of the Grid Control Devices

Control devices such as inverters and generator controllers are critical for the stable operation of the power grid, especially for power stability control and power dispatch. However, the Electromagnetic Pulse (EMP) is a potential threat to electronic devices in modern power grids, therefore decreasing the power grid resilience and bringing unrecoverable damages to the devices. To reveal the impact mechanism of the EMP, impedance and Pulse Current Injection (PCI) testing is established to study the vulnerability of the grid control devices. The impedance of the grid control devices is accurately measured using impedance analyzers with different frequency ranges. Then the voltage and current responses are tested based on the PCI testing. The vulnerability experiments based on two grid control devices are carried out. And the comparison results reveal that most ports would be damaged under EC8, and some ports can survive under EC5 according to the calculated PCI response and cumulative energy. The results can provide a reference for the future design of control devices and the strategic resilience of power grids.

Qiu, Wei↗

Sampling on NISQ Devices: "Who’s the Fairest One of All?"

Modern NISQ devices are subject to a variety of biases and sources of noise that degrade the solution quality of computations carried out on these devices. A natural question that arises in the NISQ era, is how fairly do these devices sample ground state solutions. To this end, we run five fair sampling problems (each with at least three ground state solutions) that are based both on quantum annealing and, on the Grover Mixer, -QAOA algorithm for gate-based NISQ hardware. In particular, we use seven IBM Q devices, the Aspen-9 Rigetti device, the IonQ device, and three D-Wave quantum annealers. For each of the fair sampling problems, we measure the ground state probability, the relative fairness of the frequency of each ground state solution with respect to the other ground state solutions, and the aggregate error as given by each hardware provider. Overall, our results show that NISQ devices do not achieve fair sampling yet. Furthermore, we also observe differences in the software stack with a particular focus on compilation techniques that illustrate what work will still need to be done to achieve a seamless integration of frontend (i.e., quantum circuit description) and backend compilation.

Computer Science↗

Training a Neural Network on Analog TaO x ReRAM Devices Irradiated With Heavy Ions: Effects on Classification Accuracy Demonstrated With CrossSim

The image classification accuracy of a TaO x ReRAM-based neuromorphic computing accelerator is evaluated after intentionally inducing a displacement damage up to a fluence of 10 14 2.5-MeV Si ions/cm 2 on the analog devices that are used to store weights. Results are consistent with a radiation-induced oxygen vacancy production mechanism. When the device is in the high-resistance state during heavy ion radiation, the device resistance, linearity, and accuracy after training are only affected by high fluence levels. Here, the findings in this paper are in accordance with the results of previous studies on TaO x -based digital resistive random access memory. When the device is in the low-resistance state during irradiation, no resistance change was detected, but devices with a 4-kΩ inline resistor did show a reduction in accuracy after training at 10 14 2.5-MeV Si ions/cm 2 . This indicates that changes in resistance can only be somewhat correlated with changes to devices’ analog properties. This paper demonstrates that TaO x devices are radiation tolerant not only for high radiation environment digital memory applications but also when operated in an analog mode suitable for neuromorphic computation and training on new data sets.

42 ENGINEERING↗

Technologies for Prolonging Cardiac Implantable Electronic Device Longevity

Prolonged longevity of cardiac implantable electronic devices (CIEDs) is needed not only as a passive response to match the prolonging life expectancy of patient recipients, but will also actively prolong their life expectancy by avoiding/deferring the risks (and costs) associated with device replacement. CIEDs are still exclusively powered by nonrechargeable primary batteries, and energy exhaustion is the dominant and an inevitable cause of device replacement. The longevity of a CIED is thus determined by the attrition rate of its finite energy reserve. The energy available from a battery depends on its capacity (total amount of electric charge), chemistry (anode, cathode, and electrolyte), and internal architecture (stacked plate, folded plate, and spiral wound). The energy uses of a CIED vary and include a background current for running electronic circuitry, periodic radiofrequency telemetry, high‐voltage capacitor reformation, constant ventricular pacing, and sporadic shocks for the cardiac resynchronization therapy defibrillators. The energy use by a CIED is primarily determined by the patient recipient's clinical needs, but the energy stored in the device battery is entirely under the manufacturer's control. A larger battery capacity generally results in a longer‐lasting device, but improved battery chemistry and architecture may allow more space‐efficient designs. Armed with the necessary technical knowledge, healthcare professionals and purchasers will be empowered to make judicious selection on device models and maximize the utilization of all their energy‐saving features, to prolong device longevity for the benefits of their patients and healthcare systems.

LAU, ERNEST W.↗

Device-Level Multidimensional Thermal Dynamics With Implications for Current and Future Wide Bandgap Electronics

Researchers have been extensively studying wide-bandgap (WBG) semiconductor materials such as gallium nitride (GaN) with an aim to accomplish an improvement in size, weight, and power of power electronics beyond current devices based on silicon (Si). However, the increased operating power densities and reduced areal footprints of WBG device technologies result in significant levels of self-heating that can ultimately restrict device operation through performance degradation, reliability issues, and failure. Typically, self-heating in WBG devices is studied using a single measurement technique while operating the device under steady-state direct current measurement conditions. However, for switching applications, this steady-state thermal characterization may lose significance since the high power dissipation occurs during fast transient switching events. Therefore, it can be useful to probe the WBG devices under transient measurement conditions in order to better understand the thermal dynamics of these systems in practical applications. In this work, the transient thermal dynamics of an AlGaN/GaN high electron mobility transistor (HEMT) were studied using thermoreflectance thermal imaging and Raman thermometry. Also, the proper use of iterative pulsed measurement schemes such as thermoreflectance thermal imaging to determine the steady-state operating temperature of devices is discussed. These studies are followed with subsequent transient thermal characterization to accurately probe the self-heating from steady-state down to submicrosecond pulse conditions using both thermoreflectance thermal imaging and Raman thermometry with temporal resolutions down to 15 ns.

42 ENGINEERING↗

Eye-Safe 1.5 and 2.0 Micron Laser Power Conversion Using Metamorphic InGaAs Photovoltaic Devices

Laser power transmission at 1.5 and 2.0 microns are considered eye-safe up to 0.1 W/cm2 irradiance. Further, the atmospheric bands at these two wavelengths may provide the highest optical transmission through the atmosphere in hazy conditions. By slowly changing the lattice-constant of InGaAs with a Compositionally Graded Buffer (CGB), we have fabricated InGaAs photovoltaic (PV) devices over a wide range of bandgaps useful for multijunction concentrating photovoltaic devices, thermophotovoltaic devices, and Laser Power Converters (LPC). Here, we have demonstrated monochromatic power conversion of 1.5-micron light with an eye-safe efficiency of 39.8% at 0.1 W/cm2 with InGaAs devices lattice-matched to InP with an Antireflection Coating (ARC). We have also demonstrated 30.2% and 24.5% eye-safe LPC efficiency of metamorphic InGaAs devices grown on GaAs substrates using GaInP and AlGaAsP CGBs, respectively. Finally, we have demonstrated metamorphic InGaAs devices grown on InP and GaAs substrates that are estimated to have eye-safe LPC efficiencies at 2.0 microns of 27.4% and 20.9% respectively. The efficiencies of all these LPC devices continues to increase up to about 30-70 times the eye-safe irradiance.

eye-safe↗

SU-E-J-48: Development of An Abdominal Compression Device for Respiratory Correlated Radiation Therapy

Purpose: The aim of this study is to develop the abdominal compression device which could control pressure level according to the abdominal respiratory motion and evaluate its feasibility. Methods: In this study, we focused on developing the abdominal compression device which could control pressure level at any point of time so the developed device is possible to use a variety of purpose (gating technique or respiratory training system) while maintaining the merit of the existing commercial device. The compression device (air pad form) was designed to be able to compress the front and side of abdomen and the pressure level of the abdomen is controlled by air flow. Pressure level of abdomen (air flow) was determined using correlation data between external abdominal motion and respiratory volume signal measured by spirometer. In order to verify the feasibility of the device, it was necessary to confirm the correlation between the abdominal respiratory motion and respiratory volume signal and cooperation with respiratory training system also checked. Results: In the previous study, we could find that the correlation coefficient ratio between diaphragm and respiratory volume signal measured by spirometer was 0.95. In this study, we confirmed the correlation between the respiratory volume signal and the external abdominal motion measured by belt-transducer (correlation coefficient ratio was 0.92) and used the correlated respiratory volume data as an abdominal pressure level. It was possible to control the pressure level with negligible time delay and respiratory volume data based guiding waveforms could be properly inserted into the respiratory training system. Conclusion: Through this feasibility study, we confirmed the correlation between the respiratory volume signal and the external abdominal motion. Also initial assessment of the device and its compatibility with the respiratory training system were verified. Further study on application in respiratory gated therapy and respiratory training system will be investigated. This work was supported by Radiation Technology R and D program (No. 2013M2A2A7043498)and Basic Atomic Energy Research Institute (BAERI)(No. NRF-2009-0078390) through the National Research Foundation of Korea funded by the Ministry of Science, ICT and Future Planning.

21 SPECIFIC NUCLEAR REACTORS AND ASSOCIATED PLANTS↗

SU-C-213-07: Fabrication and Testing of a 3D-Printed Small Animal Rectal Cooling Device to Evaluate Local Hypothermia as a Radioprotector During Prostate SBRT

Purpose: The protective effects of induced or even accidental hypothermia on the human body are widespread with several medical uses currently under active research. In vitro experiments using human cell lines have shown hypothermia provides a radioprotective effect that becomes more pronounced at large, single-fraction doses common to SBRT treatments. Relevant to prostate SBRT, this work details the fabrication and testing of a 3D-printed cooling device to facilitate the investigation of the radioprotective effect of local hypothermia on the rat rectum. Methods: A 3cm long, two-channel rectal cooling device was designed in SOLIDWORKS CAD for 3D printing. The water intake nozzle is connected to a 1mm diameter brass pipe from which water flows and circulates back around to the exit nozzle. Both nozzles are connected by plastic tubing to a water chiller pump. Following leak-proof testing, fiber optic temperature probes were used to evaluate the temperature over time when placed adjacent to the cooling device within a rat rectum. MRI thermometry characterized the relative temperature distribution in concentric ROIs surrounding the probe. CBCT images from a small-animal irradiator were evaluated for imaging artifacts which could affect Monte Carlo dose calculations during treatment planning. Results: The rectal temperature adjacent to the cooling device decreased from body temperature (37°C) to 15°C in 10–20 minutes from device insertion. Rectal temperature was maintained at 15±3°C during active cooling. MRI thermometry tests revealed a steep temperature gradient with increasing distance from the cooling device, with the desired temperature range maintained within the surrounding few millimeters. Conclusion: A 3D printed rectal cooling device was fabricated for the purpose of inducing local hypothermia in rat rectums. Rectal cooling capabilities were characterized in-vivo to facilitate an investigation of the radioprotective effect of hypothermia for late rectal toxicity following a single large dose of radiation. Funding support provided by RSNA research seed grant.

60 APPLIED LIFE SCIENCES↗

SU-E-T-348: Effect of Treatment Table and Immobilization Devices On Surface Dose When Using a GRID Technique

Purpose: To determine the increase of surface dose of MLC-designed GRID therapy in the presence of immobilization devices and treatment table. Methods: To create a GRID field, our facility utilizes an MLC consisting of four millimeter wide leaves. The field is designed to have aperture sizes of 0.8 cm X 0.8 cm with inter-aperture distance of 3.2 cm. Gafchromic EBT3 film was placed between the surface of a solid water phantom and the immobilization device. The treatment table was also present within the beam path. The devices consist of carbon fiber exterior shell. A piece of film was also placed at maximal depth for the photon energy of 10 MV. Image files were converted to dose per a calibration curve based on the selected red channel. The surface dose to maximum dose was established by comparing the ratio of seven centrally located aperture regions-of-interest and four adjacent inter-aperture regions-of-interest were measured with the available software tools. Results: With no devices present in beam path, the ratio of surface dose to maximum dose was 11.5% ± 0.3% for aperture region and 7.0% ± 0.1% for inter-aperture region. When devices are present, the ratio of surface dose to maximum dose was 45.2% ± 0.5% and 33.8% ± 1.1%, respectively. Due to the presence of devices, the surface dose increases in aperture region by 3.8 times or in the inter-aperture region by 4.7 times. Conclusion: The purpose of using GRID technique is to deliver a single fractional dose in range of 15–20 Gy to a bulky lesion while also preserving skin tolerance. The increase of surface dose due to devices placed in beam path may increase the chance of skin toxicity in GRID therapy. Care should be used to determine best manageable patient immobilization while considering skin dose especially for posteriorly located lesions.

60 APPLIED LIFE SCIENCES↗

Gas Ingress and Egress of MEMS Multi-Chip Modules and MEMS Devices

Hermetic microcircuit packaging was the dominant method of protecting semiconductor devices in the 1960s and 1970s. After losing majority market sectors to plastic encapsulated microelectronics over the last a few decades, hermetic packaging remains the preferred method of protecting semiconductor devices for critical applications such as in military, space, and medical fields, where components and systems are required to serve for several decades. MEMS devices impose additional challenges to packaging by requiring specific internal cavity pressures to function properly or deliver the needed quality (Q) factors. In MEMS multichip modules, internal pressure requirement conflicts arise when different MEMS devices require different internal gases and pressures. The authors developed a closed-formed equation to model pressure changes of hermetic enclosures due to gas ingression. This article expands the authors mathematical model to calculate gas pressure of a MEMS multichip module package as well as those of MEMS devices inside the multichip module package. These equations are not only capable of calculating service lifetimes of MEMS devices and multi-chip modules but can also help develop MEMS device packaging strategies to extend the service life of MEMS multi-chip modules.

36 MATERIALS SCIENCE↗

Susceptibility Study of Audio Recording Devices to Electromagnetic Stimulations

Little research has been performed to study how intentional electromagnetic signals may couple into recording devices. An electromagnetic susceptibility study was performed on an analog tape recorder, a digital video camera, a wired computer microphone, and a wireless microphone system to electromagnetic interference. Devices were subjected to electromagnetic stimulations in the frequency range of 1-990 MHz and field strengths up to 4.9 V/m. Carrier and message frequencies of the stimulation signals were swept, and the impacts of device orientation and antenna polarization were explored. Message signals coupled into all devices only when amplitude modulated signals were used as stimulation signals. Test conditions that produced maximum sensitivity were highly specific to each device. Only narrow carrier frequency ranges could be used for most devices to couple messages into recordings. A basic detection technique using cross-correlation demonstrated the need for messages to be as long as possible to maximize message detection and minimize detection error. Analysis suggests that detectable signals could be coupled to these recording devices under realistic ambient conditions.

42 ENGINEERING↗

Embedded Volttron Specification - Benchmarking Small Footprint Compute Devices for Volttron

An embedded system is a small footprint computing unit that typically serves a specific purpose closely associated with measurements and control of hardware devices. These units are designed for reasonable durability and operations in a wide range of operating conditions. Some embedded systems support real-time operations and can demonstrate high levels of reliability. Many have failsafe mechanisms built to handle graceful shutdown of the device in exception conditions. The available memory, processing power, and network connectivity of these devices are limited due to the nature of their specific-purpose design and intended application. Industry practice is to carefully design the software for the available hardware capability to suit desired deployment needs. Volttron is an open source agent development and deployment platform designed to enable researchers to interact with devices and appliances without having to write drivers themselves. Hosting Volttron on small footprint embeddable devices enables its demonstration for embedded use. This report details the steps required and the experience in setting up and running Volttron applications on three small footprint devices: the Intel Next Unit of Computing (NUC), the Raspberry Pi 2, and the BeagleBone Black. In addition, the report also details preliminary investigation of the execution performance of Volttron on these devices.

97 MATHEMATICS AND COMPUTING↗

Re-Evaluation of Active Interlock Envelopes Considering Insertion Device Correction Coils

The Active Interlock (AI) is a system that ensures that the beam position and angle through the NSLS-II storage ring is located so that the machine apertures that may be struck by synchrotron radiation are not exposed to high power beam which may compromise them. Of particular importance in the NSLS-II is to maintain the beam position and angle within the insertion device (ID) straights where insertions devices make high power x-ray beams for users which may compromise the storage ring vacuum chamber. The beam position and angle in the center of the insertion device is calculated using a pair of beam position monitors (BPMs) on either side of the device. The safe area of positions and angles within the insertion device is called the AI envelope. If there is a magnetic element between the BPMs, it needs to be accounted for in the calculation of the beam position and angle. In addition to the permanent magnet arrays that comprise the insertion device itself, there are correction coils that are used to correct any orbit distortions that are generated by imperfections in the device. It has recently come to our attention that these coils are not considered in the AI calculations, nor are the currents in these coils read by the AI. As it may be possible in theory for these coils to produce angles large enough that the synchrotron radiation beam may damage components, we analyzed the possibility for all ID types and configurations. In this report we show what changes are necessary for the AI envelope, and limits placed upon the correction coils to maintain operation of the storage ring without compromising protection.

36 MATERIALS SCIENCE↗

Comparative Assessment of Experimental Testing of Instrument with an Embedded Digital Device Using Model-Based and Conventional Methods

The use of digital equipment has not been widespread in U.S. nuclear facilities. A major contributing factor to this situation arises from regulatory concerns about common cause failures (CCFs) stemming from the use of identical software in redundant systems, questions as to how to quantify the reliability of software-based products, validity of tools that are used for software verification and validation (V&V), and the effectiveness of software QA procedures. Compounding the concerns are sporadic incidents of digital equipment malfunctions in nuclear power plants, including lockups resulting from software memory leaks, feedwater control malfunctions due to excessive traffic on Ethernet networks, software logic errors, and other problems leading to plant trips. Additionally, the limited amount of demonstrated research and a lack of industry consensus on quantitative software reliability methodologies has hindered the widespread adoption of digital I&C in the nuclear industry. In a recent Regulatory Issue Summary (RIS), the U.S. Nuclear Regulatory Commission (NRC) identified concerns about the impact of greater use of instrumentation and control (I&C) equipment with an embedded digital device (EDD) [1]. Specifically, the NRC staff states that increased use of such devices “may increase a facility’s vulnerability to a CCF” (i.e., common-cause failure). The prevailing NRC guidance regarding software CCF (SCCF) identifies two design attributes that are acceptable for eliminating CCF concerns: (1) diversity or (2) testability (specifically, 100% testability). Either solution can result in high costs and remaining licensing uncertainty (i.e., how much diversity is enough? how to ensure test coverage of every possible sequence of device states?). Consequently, many utilities and reactor designers have limited or avoided more extensive use of digital technology to minimize licensing, scheduling, and financial risk. Without development of cost effective qualification methods to satisfy regulatory requirements and address the potential for CCF vulnerability associated with EDDs, the nuclear power industry may not be able to realize the benefits of digital technology achieved by other industries. In order to address these challenges, the U.S. Department of Energy (DOE) is sponsoring this research to assess the prospect of CCF in digital I&C equipment. The purpose of the current research is to develop an effective approach employing science-based methods to resolve concerns about CCF vulnerability that serve to inhibit deployment of advanced instrumentation (e.g., sensors, actuators, microcontrollers) with EDDs in nuclear power applications. The research objectives address the challenge of establishing high levels of safety and reliability assurance needed for the qualification of EDDs (e.g., microprocessors, programmable logic devices) that are subject to software design faults, complex failure modes, and CCF vulnerability. Specific objectives are: (1) assess the regulatory context for treatment of CCF vulnerability a graded approach to their qualification, (3) develop and extend model-based testing methods to enable effective demonstration of whether devices are subject to CCF, which may arise from vulnerabilities introduced at any stage of the design lifecycle, (4) establish a cost-effective testing framework that incorporates automation and test scenario prioritization, and (5) demonstrate the qualification approach through selection and testing of candidate digital device(s). This report documents an assessment of the results from experimental testing of a representative instrument with an embedded digital device. The experiment serves as a proof-of-concept demonstration of a model-based testing (MBT) framework. The objective of MBT is to ensure that an EDD undergoes suitably comprehensive testing to establish that it is not subject to SCCF. The approach by which MBT accomplishes this objective is through development and application of an effective test suite that provides the appropriate coverage to detect the full range of postulated faults that may arise at the requirements, design, and code (implementation) level of the EDD software. The findings of the experiment involve the application of the MBT framework by Ohio State University (OSU) through testing of the selected demonstration instrument (i.e., the prototype smart pressure sensor developed by Virginia Commonwealth University, VCU). In addition, the experiment findings also involve application of a more conventional black-box testing approach that serves as a baseline against which the MBT methodology can be compared. The primary outcome documented in this report is the comparative analysis of the capabilities demonstrated for each method. The results of the analysis demonstrate clear benefits that arise from the MBT methodology. The comparison indicates greater effectiveness from the more comprehensive evidence available through MBT and enhanced efficiency achieved through automation within the MBT framework. The structure of the report addresses the approach and application of each test method as well as the comparative analysis of the experimental results. Chapter 2 gives a summary overview of the demonstration approach. Chapter 3 covers the baseline testing and Chapter 4 documents the model-based testing. Chapter 5 describes the findings of the comparative analysis and presents the conclusions that can be drawn about the effectiveness and efficiency of the MBT methodology.

47 OTHER INSTRUMENTATION↗