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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 451 records · Page 25

Atomically Precise Surface Engineering for Producing Imagers

High-quality surface coatings, and techniques combining the atomic precision of molecular beam epitaxy and atomic layer deposition, to fabricate such high-quality surface coatings are provided. The coatings made in accordance with the techniques set forth by the invention are shown to be capable of forming silicon CCD detectors that demonstrate world record detector quantum efficiency (>50%) in the near and far ultraviolet (155 nm-300 nm). The surface engineering approaches used demonstrate the robustness of detector performance that is obtained by achieving atomic level precision at all steps in the coating fabrication process. As proof of concept, the characterization, materials, and exemplary devices produced are presented along with a comparison to other approaches.

Greer, Frank↗

Optically Inaccessible Flow Visualization using Positron Emission Tomography

Flow visualization is a powerful tool for characterizing fluid dynamics within engineering systems that utilize fluid working media. Recent advances in Positron Emission Tomography (PET) have enhanced its ability to extend beyond the medical field, and offer an alternate vantage point in visualizing optically inaccessible fluid distributions and flow fields within the aerospace field. In light of this prospect an investigation has ensued to parametrically bound the flows that can be sufficiently resolved using current PET technology. Results from an initial series of experiments and analyses performed at the Positron Imaging Centre (PIC) located at the University of Birmingham, UK, will be presented. Discussion will also cover preliminary, on-going, activities associated with assessing the utility of PET technology in zero-gravity propellant gauging, ionization efficiency characterization in electric propulsion devices, and broader industrial applications.

PET↗

MCT Avalanche Photodiode Detector for Two-Micron Active Remote Sensing Applications

Mercury Cadmium Telluride electron initiated avalanche photodiodes demonstrated a breakthrough in lidar active remote sensing technology. A lidar detection system, based on an array of these devices, was integrated and characterized for 2-μm applications. Characterization experiments were focused on evaluating the dark current, gain and responsivity variations with bias voltage. Quantum efficiency and input dynamic range including noise-equivalent-power and maximum detectable power, were calculated from these results. Operating the detection system using four pixels at 77.6 K, 12 V bias resulted in a current responsivity of 615.8 A/W and a voltage responsivity of 1.45 GV/W. Minimum detectable power of 14 pW was obtained, which is equivalent to 5.7 fW/Hz(exp 1/2) noise-equivalent-power, indicating an average noise-equivalent-power of 1.4 fW/Hz(exp 1/2) per pixel. Work is in progress to integrate and validate this detection system using a newly developed triple-pulse integrated path differential absorption lidar for simultaneous and independent atmospheric measurements of water vapor and carbon dioxide.

Refaat, Tamer F.↗

Space Qualification Studies of AOTF Devices Under the MISSE-11 Mission

The acousto-optic tunable filter (AOTF) devices are used in a variety of applications including hyperspectral and spectrapolarimetric based imaging. The AOTF devices provide several advantages including speed and random access to desired spectral bands and enable all-solid-state operation that are attractive for space applications. In this paper, the performance of Tellurium Dioxide (TeO 2 ) and Mercurous Bromide (Hg 2 Br 2 ) AOTF devices in space environment carried out under the NASA’s Materials International Space Station Experiments 11 (MISSE-11) mission is discussed. The purpose of the MISSE-11 mission was to study materials and devices subjected to space conditions for long term while attached to the International Space station (ISS). The TeO 2 AOTF was developed for short wavelength IR (SWIR) operation while the Hg 2 Br 2 AOTF device was developed for long wavelength IR (LWIR) operation. These devices were attached to the ISS platform for more than a year. Pre-flight and post-flight performance characterization were performed on these devices. In the case of TeO 2 AOTF, the preflight efficiency was around 87% with a center frequency at 68MHz while the post-flight efficiency was around 83%. However, the optical transmission of Hg 2 Br 2 AOTF had deteriorated considerably. The details of performance testing and analysis of both AOTF devices are discussed.

Space Qualification↗

Spectral interferometry-based microwave-frequency vibrometry for integrated acoustic wave devices

Microwave phononics is a promising platform for sensing, computing, and quantum information science; thus, sensitive and high-throughput characterization tools are needed not only for device verification and optimization but also for revealing transient and nonlinear dynamics. Existing interferometric optical vibrometers for 2D mapping are challenged by operating point stabilization, surface reflectivity contrast, and long acquisition time. Here, we use spectral interferometry, which is insensitive to these factors and utilizes a continuous raster scanning scheme for vibration mapping with high throughput. We intensity-modulate our broadband light source with an electro-optic modulator to resolve vibrations at microwave frequencies. Our system requires no fast photodetector or digitizer operating in the microwave frequency range. We image the 1 GHz vibration field of a 300 × 150 µm 2 area of an entire surface acoustic wave device in 10 min with simultaneous surface profilometry. Our system has a vibration sensitivity of 120 fm/sqrt(Hz) and a linear throughput of 0.77 mm/s on the chip surface. The technique offers capabilities for characterizing a wide range of acoustic wave and micromechanical devices to better understand their behavior and performance.

47 OTHER INSTRUMENTATION↗

Influence of Disorder on the Electronic Properties and Magnetotransport of Ti 3 C 2 T x Single-Flake Devices

The exploration of MXenes for electronic applications is a rapidly growing field in materials science. However, most research has focused on MXene films, with only a limited number of studies addressing the characterization of single-flake devices. In this work, we investigate the electronic and magnetotransport properties of Ti 3 C 2 T x single-flake devices, exploring the influence of structural defectivity on their transport mechanisms. We show that negative magnetoresistance present at low temperatures in single flake samples arises from weak localization, which we analyze to extract the phase coherence length of single-layer and multi-layer flakes. The study of magnetoresistance for this metallic MXene shows that the material exhibits quantum transport phenomena when intrinsic electronic behavior dominates. Moreover, by increasing the defect density via thermal annealing in ultrahigh vacuum, we uncover and characterize the metal-to-disordered metal transition in Ti 3 C 2 T x , shedding light on new properties and enriching fundamental knowledge about MXenes.

MXenes↗

Investigation of superlattice device structures

This report describes the investigation of growth properties, and the structure of epitaxial multilayer Si(Si(1x)Ge(x)) films grown on bulk Silicon Substrates. It also describes the fabrication and characterization of MOSFET and MESFET devices made on these epitaxial films. Films were grown in a CVD reactor using hydrides of Si and Ge with H2 and He as carrier gases. Growth temperatures were between 900 C and 1050 C with most films grown at 1000 C. Layer thickness was between 300A and 2000A and total film thickness was between 0.25 micro m and 7 micro m. The Ge content (X) in the alloy layers was between .05 and 0.2. N-type multilayer films grown on (100) p-type Si showed Hall mobility in the range 1000 to 1500 sq cm/v for an average carrier concentration of approx. 10 to the 16th power/cu cm. This is up to 50% higher than the Hall mobility observed in epitaxial Si films grown under the same conditions and with the same average carrier concentration. The mobility enhancement occurred in films with average carrier concentration (n) from 0.7 x 10 to the 16th power to 2 x 10 to the 17th power/cu cm, and total film thickness greater than 1.0 micro m. No mobility enhancement was seen in n-type multilayer films grown on (111) Si or in p-type multilayer films. The structure of the films was investigated was using SEM, TEM, AES, SIMS, and X-ray double crystal diffraction techniques. The film composition profile (AES, SIMS) showed that the transition region between layers is of the order of about 100A. The TEM examination revealed a well defined layered structure with fairly sharp interfaces and good crystalline quality. It also showed that the first few layers of the film (closest to the substrate) are uneven, most probably due to the initial growth pattern of the epitaxial film where growth occurs first in isolated islands that eventually growth and coalesce. The X-ray diffraction measurement determined the elastic strain and strain relief in the alloy layers of the film and the elastic strain in the intervening Si layers.

Gergis, I. S.↗

Extended Characterization of the Common-Source and Common-Gate Amplifiers using a Metal-Ferroelectric-Semiconductor Field Effect Transistor

Collected data for both common-source and common-gate amplifiers is presented in this paper. Characterizations of the two amplifier circuits using metal-ferroelectric-semiconductor field effect transistors (MFSFETs) are developed with wider input frequency ranges and varying device sizes compared to earlier characterizations. The effects of the ferroelectric layer's capacitance and variation load, quiescent point, or input signal on each circuit are discussed. Comparisons between the MFSFET and MOSFET circuit operation and performance are discussed at length as well as applications and advantages for the MFSFETs.

Hunt, Mitchell↗

Characterization of Commercial Li-ion Cells in Pouch Format

The li-ion pouch design cells exhibit similar behavior under off-nominal conditions as those in metal cans that do not have the internal safety devices. Safety should be well characterized before batteries are designed. Some of the li-ion pouch cell designs studied in this program reacted most violently to overcharge conditions at the medium rates but were tolerant to overcharge at very low rates. Some pouch cell designs have higher tolerance to vacuum exposures than some others. A comparison of the pouch material itself does not show a correlation between this tolerance and the number of layers or composition of the pouch indicating that this is a property of the electrode stack design inside the pouch. Reduced pressure (8 to 10 psi) test environments show that the extent of capacity degradation under reduced pressure environments is much less than that observed under vacuum conditions. Lithium-ion Pouch format cells are not necessarily true polymer cells.

Jeevarajan, Judith↗

Microscale Particulate Classifiers (MiPAC) Being Developed

The NASA Glenn Research Center is developing microscale sensors to characterize atmospheric-borne particulates. The devices are fabricated using MEMS (microelectromechanical systems) technologies. These technologies are derived from those originally developed in support of the semiconductor processing industry. The resulting microsensors can characterize a wide range of particles and are, therefore, suitable to a broad range of applications. This project is supported under a collaborative program called the Glennan Microsystems Initiative. The initiative comprises members of NASA Glenn Research Center, various university affiliates from the State of Ohio, and a number of participating industrial partners. Funding is jointly provided by NASA, the State of Ohio, and industrial members. The work described here is a collaborative arrangement between researchers at Glenn, the University of Minnesota, The National Institute of Standards and Technology (NIST), and the Cleveland State University. Actual device fabrication is conducted at Glenn and at the laboratories of Case Western Reserve University. Case Western is also located in Cleveland, Ohio, and is a participating member of the initiative. The principal investigator for this project is Paul S. Greenberg of Glenn. Two basic types of devices are being developed, and target different ranges of particle sizes. The first class of devices, which is used to measure nanoparticles (i.e., particles in the range of 0.002 to 1 mm), is based on the technique of Electrical Mobility Classification. This technique also affords the valuable ability of measuring the electrical charge state of the particles. Such information is important in the understanding of agglomeration mechanisms and is useful in the development of methods for particle repulsion. The second type of device being developed, which utilizes optical scattering, is suitable for particles larger than 1 mm. This technique also provides information on particle shape and composition. Applications for these sensors include fundamental planetary climatology, monitoring and filtration in spacecraft, human habitation modules and related systems, characterization of particulate emissions from propulsion and power systems, and as early warning sensors for both space-based and ter-restrial fire detection. These devices are also suitable for characterizing biological compounds such as allergens, infectious agents, and biotoxic agents.

Greenberg, Paul S.↗

InGaAsSb Detectors' Characterization for 2-Micron CO2 Lidar/DIAL Applications

Recent interest in monitoring atmospheric CO2 focuses attention on infrared remote sensing using the 2-micron lidar/differential absorption lidar (DIAL) technique. Quantum detectors are critical components in this technique, and many research efforts concentrate on developing such devices for the 2-micron wavelength. Characterization results of InGaAsSb quantum detectors for the 2-micron wavelength range are presented, including experimental setup and procedure. Detectors are prototype devices manufactured by using separate absorption and multiplication (SAM) structures. Characterization experiments include V-I measurements, spectral response and its variation with bias voltage and temperature, noise measurements, noise-equivalent-power (NEP) and detectivity calculations, and signal-to-noise ratio (SNR) estimation. A slight increase in the output signal occurred with increased bias voltage and was associated with a noise level increase. Cooling down the detectors reduces noise and shifts the cutoff wavelength to shorter values. Further improvement in the design and manufacturing process, by increasing the device gain and lowering its noise level, is necessary to meet the required CO2 lidar/DIAL specifications.

Refaat, Tamer F.↗

InGaAsSb Detectors Characterization for 2-Micron CO2 Lidar/DIAL Applications

Recent interest in monitoring atmospheric CO2 focuses attention on infrared remote sensing using the 2-micron lidar/differential absorption lidar (DIAL) technique. Quantum detectors are critical components in this technique, and many research efforts concentrate on developing such devices for the 2-micron wavelength. Characterization results of InGaAsSb quantum detectors for the 2-micron wavelength range are presented, including experimental setup and procedure. Detectors are prototype devices manufactured by using separate absorption and multiplication (SAM) structures. Characterization experiments include V-I measurements, spectral response and its variation with bias voltage and temperature, noise measurements, noise-equivalent-power (NEP) and detectivity calculations, and signal-to-noise ratio (SNR) estimation. A slight increase in the output signal occurred with increased bias voltage and was associated with a noise level increase. Cooling down the detectors reduces noise and shifts the cutoff wavelength to shorter values. Further improvement in the design and manufacturing process, by increasing the device gain and lowering its noise level, is necessary to meet the required CO2 lidar/DIAL specifications.

Refaat, Tamer F.↗

Influence of material quality and process-induced defects on semiconductor device performance and yield

An overview of major causes of device yield degradation is presented. The relationships of device types to critical processes and typical defects are discussed, and the influence of the defect on device yield and performance is demonstrated. Various defect characterization techniques are described and applied. A correlation of device failure, defect type, and cause of defect is presented in tabular form with accompanying illustrations.

Porter, W. A.↗

Bioelectrochemical crossbar architecture screening platform for extracellular electron transfer

Electroactive microbes can serve as living components in bioelectronic devices, where their unique ability to transfer electrons enables applications in sensing, energy conversion, and synthesis, but they remain challenging to engineer because the bioelectrochemical systems (BESs) used for characterization are low throughput. Here, we present a bioelectrochemical crossbar architecture screening platform (BiCASP) that uses stacked and orthogonally arrayed electrodes to enable individual sample selection for characterization in arrayed formats. This device reports on the current generated by electroactive bacteria on the minute timescale, decreasing the time for data acquisition by several orders of magnitude compared to conventional BESs. This device increases the throughput of screening engineered biological components in cells, identifying mutants of the membrane protein wire MtrA in Shewanella oneidensis that retain the ability to support extracellular electron transfer (EET). BiCASP may be integrated with bioelectronics that need directed evolution of electroactive proteins.

Shewanella↗

Mapping the intrinsic photocurrent streamlines through micromagnetic heterostructure devices

Photocurrent in quantum materials is often collected at global contacts far away from the initial photoexcitation. This collection process is highly nonlocal. It involves an intricate spatial pattern of photocurrent flow (streamlines) away from its primary photoexcitation that depends sensitively on the configuration of current collecting contacts as well as the spatial nonuniformity and tensor structure of conductivity. Direct imaging to track photocurrent streamlines is challenging. Here, we demonstrate a microscopy method to image photocurrent streamlines through ultrathin heterostructure devices comprising platinum on yttrium iron garnet (YIG). We accomplish this by combining scanning photovoltage microscopy with a uniform rotating magnetic field. Here, local photocurrent is generated through a photo-Nernst type effect with its direction controlled by the external magnetic field. This enables the mapping of photocurrent streamlines in a variety of geometries that include conventional Hall bar-type devices, but also unconventional wing-shaped devices called electrofoils. In these, we find that photocurrent streamlines display contortion, compression, and expansion behavior depending on the shape and angle of attack of the electrofoil devices, much in the same way as tracers in a wind tunnel map the flow of air around an aerodynamic airfoil. This affords a powerful tool to visualize and characterize charge flow in optoelectronic devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Single-Event Effect Test Report Analog Devices LTC1604AIG#90117 ADC

This study is to characterize the destructive single-event latchup (SEL) susceptibility of the LTC1604AIG#90117 (LTC1604) analog/digital converter (ADC). The device was monitored for SEL current events on the power supplies during exposure to a heavy ion beam at Lawrence Berkeley National Laboratory (LBNL) 88-inch Cyclotron. Testing was performed on September 11, 2021.

single-event latchup (SEL)↗

Precision measurement of magnetic characteristics of an article with nullification of external magnetic fields

An apparatus for characterizing the magnetic field of a device under test is discussed. The apparatus is comprised of five separate devices: (1) a device for nullifying the ambient magnetic fields in a test environment area with a constant applied magnetic field; (2) a device for rotating the device under test in the test environment area; (3) a device for sensing the magnetic field (to obtain a profile of the magnetic field) at a sensor location which is along the circumference of rotation; (4) a memory for storing the profiles; and (5) a processor coupled to the memory for characterizing the magnetic field of the device from the magnetic field profiles thus obtained.

Honess, Shawn B.↗