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At least 451 records · Page 25

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DOE OSTI2015

Numerical investigation of the effect of driving voltage pulse shapes on the characteristics of low-pressure argon dielectric barrier discharge

In this work, we numerically compare the effect of a sinusoidal, triangular, and rectangular pulsed voltage profile on the calculated particle production, electric current, and gas voltage in a dielectric barrier discharge. The total argon gas pressure of 400 Pa, the distance between dielectrics of 5 mm, the dielectric thickness of 0.7 mm, and the temperature of T = 300 K were considered as input parameters. The different driving voltage pulse shapes (triangular, rectangular, and sinusoidal) are considered as applied voltage with a frequency of 7 kHz and an amplitude of 700 V peak to peak. It is shown that applying a rectangular voltage, as compared with a sinusoidal or triangle voltage, increases the current peak, while the peak width is decreased. Higher current density is related to high production of charged particles, which leads to the generation of some highly active species, such as Ar* (4s level), and Ar** (4p level) in the gap.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

DOE OSTI2016

Breakdown in helium in high-voltage open discharge with subnanosecond current front rise

Investigations of high-voltage open discharge in helium have shown a possibility of generation of current pulses with subnanosecond front rise, due to ultra-fast breakdown development. The open discharge is ignited between two planar cathodes with mesh anode in the middle between them. For gas pressure 6 Torr and 20 kV applied voltage, the rate of current rise reaches 500 A/(cm{sup 2} ns) for current density 200 A/cm{sup 2} and more. The time of breakdown development was measured for different helium pressures and a kinetic model of breakdown in open discharge is presented, based on elementary reactions for electrons, ions and fast atoms. The model also includes various cathode emission processes due to cathode bombardment by ions, fast atoms, electrons and photons of resonant radiation with Doppler shift of frequency. It is shown, that the dominating emission processes depend on the evolution of the discharge voltage during the breakdown. In the simulations, two cases of voltage behavior were considered: (i) the voltage is kept constant during the breakdown; (ii) the voltage is reduced with the growth of current. For the first case, the exponentially growing current is maintained due to photoemission by the resonant photons with Doppler-shifted frequency. For the second case, the dominating factor of current growth is the secondary electron emission. In both cases, the subnanosecond rise of discharge current was obtained. Also the effect of gas pressure on breakdown development was considered. It was found that for 20 Torr gas pressure the time of current rise decreases to 0.1 ns, which is in agreement with experimental data.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

DOE OSTI2019

Electrical and Optical Characteristics of Si-Nanoparticle Films Deposited onto Substrates by High-Voltage Electrospraying from Ethanol Sols

The optical and electrical characteristics of films consisting of nanocrystalline silicon (nc-Si) deposited onto substrates by the high-voltage electrospraying of nc-Si sols in ethanol are investigated. It is found that the interaction of ethanol droplets carrying Si nanoparticles with a corona-discharge electric field leads to the polymerization of ethanol and the formation of a polymer layer on the Si-nanoparticle surface. A high-voltage facility for depositing the films using an additional focusing electrode allows one to change the geometry of the electric field and intensity in the region of the ethanol droplet flow. As a result, nc-Si films with qualitatively different properties of the polymer on the nanoparticle surface are formed, specifically, nc-Si-A and nc-Si-B, obtained without a focusing electrode and with it, respectively. Upon annealing at temperatures of up to 400°С, the optical band gap E{sub g} of the nc-Si-A films increases from ~1.9 to ~2.2 eV, while the E{sub g} value of the nc-Si-B films remains constant and amounts to 1.85 eV. The constant E{sub g} value of the nc-Si-B films is explained by the properties of the polymer on the Si-nanoparticle surface and the more effective blocking of oxygen penetration from the surrounding environment upon annealing at temperatures of up to 400°C than in the case of a polymer in nc-Si-A films. The temperature dependences of the dark and photoinduced conductivity of nc-Si-A films are approximated with good accuracy by two activation-type exponential functions and the dark activation energies are ~0.75 and 0.1 eV, respectively. The conductivity of the nc-Si-A films noticeably decreases under irradiation of the samples at wavelengths of 460–470 nm. The temperature dependences of the conductivity of the nc-Si-B films are approximated with good accuracy by exponential functions with activation energies of 0.73 (in the dark) and 0.59 eV (under photoexcitation). In contrast to the case of nc-Si-A films, the photoconductivity of nc-Si-B films grows more than fourfold relative to the dark conductivity under analogous illumination. The nc-Si-B films are photoactive and sandwich-like Al/nc-Si-B/Al structures can generate a voltage. The dark conductivity and photoconductivity of the nc-Si-A films in the voltage range of V > 2 V are determined by the two-center Poole–Frenkel effect; the concentration of the centers affecting the Poole–Frenkel conductivity is ~3 × 10{sup 17} cm{sup –3}. In nc-Si-B films in the voltage range of 2–5 V, electron transport is determined by space-charge-limited currents and, at high voltages, by the two-center Poole–Frenkel effect. The concentration of traps contributing to the space-charge-limited currents is ~4 × 10{sup 16} cm{sup –3}. The concentration of Poole–Frenkel centers affecting the conductivity decreases according to the activation law with an activation energy of 0.7 eV from 3 × 10{sup 16} to 2 × 10{sup 14} cm{sup –3} with a decrease in temperature from 120°C to 40°C.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2015

Inverter Load Rejection Over-Voltage Testing: SolarCity CRADA Task 1a Final Report

Various interconnection challenges exist when connecting distributed PV into the electrical distribution grid in terms of safety, reliability, and stability of electric power systems. One of the urgent areas for additional research - as identified by inverter manufacturers, installers, and utilities - is the potential for transient over-voltage from PV inverters. In one stage of a cooperative tests were repeated a total of seven times. The maximum over-voltage measured in any test did not exceed 200% of nominal, and typical over-voltage levels were significantly lower. The total voltage duration and the maximum continuous time above each threshold are presented here, as well as the time to disconnect for each test. Finally, we present a brief investigation into the effect of DC input voltage as well as a series of no-load tests. This report describes testing conducted at NREL to determine the duration and magnitude of transient over-voltages created by several commercial PV inverters during load-rejection conditions. For this work, a test plan that is currently under development by the Forum on Inverter Grid Integration Issues (FIGII) has been implemented in a custom test setup at NREL. Through a cooperative research and development agreement, NREL is working with SolarCity to address two specific types of transient overvoltage: load rejection overvoltage (LRO) and ground fault overvoltage (GFO). Additional partners in this effort include the Hawaiian Electric Companies, Northern Plains Power Technologies, and the Electric Power Research Institute.

14 SOLAR ENERGY↗

DOE OSTI2018

Structure and Voltage Recovery Driven by Defects Elimination in Li-Rich Layered Oxide Cathode Materials

Lithium-ion batteries (LIBs) are ubiquitous in a wide range of technologies, including cell phones, electric vehicles, and energy grid, and are indispensable in the transition toward sustainable energy technology. The battery performance is inherently connected to the capability of lithium ions to reversibly intercalate with the electrodes. The capacity of classical layered transition metal (TM) oxides, the primary commercial cathode materials, is limited to cationic redox activity. Anionic redox has thus emerged as a new paradigm for designing novel cathodes for next generation LIBs. It is recently confirmed oxygen redox in lithium-rich layered oxides (LRLO) with composition xLi 2 MnO 3 ∙(1-x)LiTMO 2 , which enables this group of materials exhibit reversible capacities exceeding 280 mAh g -1 . Unfortunately, this material undergoes voltage fading and instability that is rooted in irreversible structural transformation in terms of defects formation including lithium and oxygen vacancies, lithium tetrahedron, TM migration, edge dislocations, stacking fault, and local strain. Modification methods including morphology control, composition gradient, surface treatment, foreign elements doping, etc., have been proposed in the literatures to mitigate the defects formation and maintain the structure reversibility. Despite their improvement, the intrinsic voltage fading is still inevitable and remains a challenge that will require considerable effort to overcome. In this work, we demonstrate a path to recover the layer structure and working voltage through high-temperature annealing. The treatment at high temperature recovers the local Li-excess environments around oxygen, oxygen stacking sequence, and eliminates microstrain associated with different defects. As a result, the voltage profile once more shows plateau region during charge and the average discharge voltage is restored of the cycled cathode after heat treatment. Both theoretical calculations and experimental characterizations illustrate the mechanisms underlying the heating induced recovery. The structure metastability and defects removal are decisive in structure and voltage recovery of LRLO cathode material.

Zhang, Minghao↗

DOE OSTI2021

Report on High Energy Arcing Fault Experiments: Experimental Results from Low-Voltage Switchgear Enclosures

This report documents an experimental program designed to investigate High Energy Arcing Fault (HEAF) phenomena for low-voltage metal enclosed switchgear containing aluminum conductors. This report covers full-scale laboratory experiments using representative nuclear power plant (NPP) three-phase electrical equipment. Electrical, thermal, and pressure data were recorded for each experiment and documented in this report. This report covers experiments performed on two low-voltage switchgear units with each unit consisting of two vertical sections. The data collected supports characterization of the low-voltage HEAF hazard and these results will be used to support potential improvements in fire probabilistic risk assessment (PRA) methods. The experiments were performed at KEMA Labs located in Chalfont, Pennsylvania. The experimental design, setup, and execution were completed by staff from the NRC, the National Institute of Standards and Technology (NIST), Sandia National Laboratories (SNL) and KEMA. In addition, representatives from the Electric Power Research Institute (EPRI) observed some of the experimental setup and execution. The HEAF experiments were performed between August 26 and Augsut 29, 2019 on nearidentical Westinghouse Type DS low-voltage metal-enclosed indoor switchgear. The threephase arcing fault was initiated on the aluminum main bus or in select cases on the copper bus stabs near the breaker. These experiments used either nominal 480 volts AC or 600 volts AC. Durations of the experiments ranged from approximately 0.4 s to 8.3 s with fault currents ranging from approximately 9.2 kA to 19.3 kA. Real-time electrical operating conditions, including voltage, current and frequency, were measured during the experiments. Heat fluxes and incident energies were measured with plate thermometers, radiometers, and slug calorimeters at various locations around the electrical enclosures. Environmental measurements of breakdown, conductivity and electromagnetics were also taken. The experiments were documented with normal and high-speed videography, infrared imaging and photography. The results, while limited, indicated the difficulty in maintaining and sustaining low-voltage arcs on aluminum components of sufficient duration and at a single point as observed operating experience.

22 GENERAL STUDIES OF NUCLEAR REACTORS↗

DOE OSTI2020

Analyzing Impact of Distributed PV Generation on Integrated Transmission & Distribution System Voltage Stability—A Graph Trace Analysis Based Approach

The use of a Graph Trace Analysis (GTA)-based power flow for analyzing the voltage stability of integrated Transmission and Distribution (T&D) networks is discussed in the context of distributed Photovoltaic (PV) generation. The voltage stability of lines and the load carrying capability of buses is analyzed at various PV penetration levels. It is shown that as the PV generation levels increase, an increase in the steady state voltage stability of the system is observed. Moreover, within certain regions of stability margin changes, changes in voltage stability margins of transmission lines are shown to be linearly related to changes in the loading of the lines. Two case studies are presented, where one case study involves a model with eight voltage levels and 784,000 nodes. In one case study, a voltage-stability heat map is used to demonstrate the identification of weak lines and buses.

14 SOLAR ENERGY↗

NASA NTRS1976

High voltage design guide for airborne equipment

The report supplies the theoretical background and design techniques needed by an engineer who is designing electrical insulation for high-voltage high-power components, equipment, and systems on aircraft. A literature survey and abundant bibliography identify references that provide further data on the subjects of partial discharges, corona, field theory and plotting, voids and processes for applying insulation. Both gaseous and solid insulations are treated. Cryogenic and liquid design notes are included. Tests and test equipment for high voltage insulation and equipment are defined. Requirements of test plans and procedures for high-voltage high-power equipment are identified and illustrated by examples. Suggestions for high-voltage specifications are provided. Very few of the Military and Government specifications deal with system voltages above 10kv, thus most aircraft high-voltage specifications will have to be derived from the power industry specifications and standards produced by ASTM, IEEE, and NEMA.

W G Dunbar↗

NASA NTRS1977

Factors affecting the open-circuit voltage and electrode kinetics of some iron/titanium redox flow cells

Performance of the iron-titanium redox flow cell was studied as a function of acid concentration. Anion permeable membranes separated the compartments. Electrodes were graphite cloth. Current densities ranged up to 25 mA/square centimeter. Open-circuit and load voltages decreased as the acidity was increased on the iron side as predicted. On the titanium side, open-circuit voltages decreased as the acidity was increased in agreement with theory, but load voltages increased due to decreased polarization with increasing acidity. High acidity on the titanium side coupled with low acidity on the iron side gives the best load voltage, but such cells show voltage losses as they are repeatedly cycled. Analyses show that the bulk of the voltage losses are due to diffusion of acid through the membrane.

Reid, M. A.↗

NASA NTRS1978

A quick response four decade logarithmic high-voltage stepping supply

An improved high-voltage stepping supply, for space instrumentation is described where low power consumption and fast settling time between steps are required. The high-voltage stepping supply, utilizing an average power of 750 milliwatts, delivers a pair of mirror images with 64 level logarithmic outputs. It covers a four decade range of + or - 2500 to + or - 0.29 volts having an output stability of + or - 0.5 percent or + or - 20 millivolts for all line load and temperature variations. The supply provides a typical step setting time of 1 millisecond with 100 microseconds for the lower two decades. The versatile design features of the high-voltage stepping supply provides a quick response staircase generator as described or a fixed voltage with the option to change levels as required over large dynamic ranges without circuit modifications. The concept can be implemented up to + or - 5000 volts. With these design features, the high-voltage stepping supply should find numerous applications where charged particle detection, electro-optical systems, and high voltage scientific instruments are used.

Doong, H.↗

NASA NTRS1981

High-frequency high-voltage high-power DC-to-DC converters

The current and voltage waveshapes associated with the power transitor and the power diode in an example current-or-voltage step-up (buck-boost) converter were analyzed to highlight the problems and possible tradeoffs involved in the design of high voltage high power converters operating at switching frequencies in the range of 100 Khz. Although the fast switching speeds of currently available power diodes and transistors permit converter operation at high switching frequencies, the resulting time rates of changes of current coupled with parasitic inductances in series with the semiconductor switches, produce large repetitive voltage transients across the semiconductor switches, potentially far in excess of the device voltage ratings. The need is established for semiconductor switch protection circuitry to control the peak voltages appearing across the semiconductor switches, as well as to provide the waveshaping action require for a given semiconductor device. The possible tradeoffs, as well as the factors affecting the tradeoffs that must be considered in order to maximize the efficiency of the converters are enumerated.

Wilson, T. G.↗

NASA NTRS1983

High voltage design guide. Volume 4: Aircraft

This report supplies the theoretical background and design techniques needed by an engineer who is designing electrical insulation for high-voltage, high-power components, equipment, and systems for aircraft. A literature survey and abundant bibliography identify references that provide further data on the subjects of partial discharges, corona, field theory and plotting, voids and processes for applying insulation. Both gaseous and solid insulations are treated. Cryogenic and liquid design notes are included. Tests and test equipment for high voltage insulation and equipment are defined. Requirements of test plans and procedures for high-voltage, high-power equipment are identified and illustrated by examples. Suggestions for high-voltage specifications are provided. Very few of the Military and Government specifications deal with system voltages above 10kV, thus most aircraft high-voltage specifications will have to be derived from the power industry specifications and standards produced by ASTM, IEEE, and NEMA.

W G Dunbar↗

NASA NTRS1985

Pulse-Width-to-Analog-Voltage Converter

Peak output voltage varies linearly with input-pulse duration. Circuit converts pulses of varying widths (as from sound-velocity instrumentation or tachometers) into analog voltages. Peak voltage increases in proportion to pulse width. Voltage used to drive an x-y plotter or storage oscilloscope. Pulse-width-to-voltage converter has peak output voltage that varies with duration of input pulses.

Sosack, G. S.↗

NASA NTRS1990

Voltage-Boosting Driver For Switching Regulator

Driver circuit assures availability of 10- to 15-V gate-to-source voltage needed to turn on n-channel metal oxide/semiconductor field-effect transistor (MOSFET) acting as switch in switching voltage regulator. Includes voltage-boosting circuit efficiently providing gate voltage 10 to 15 V above supply voltage. Contains no exotic parts and does not require additional power supply. Consists of NAND gate and dual voltage booster operating in conjunction with pulse-width modulator part of regulator.

Trump, Ronald C.↗

NASA NTRS1992

Laboratory study of the temporal evolution of the current-voltage characteristic of a probe in the wake of an object immersed in a pulsed flowing plasma

Measurements of the current-voltage characteristics of a Langmuir probe in the near wake of a disk immersed in a pulsed flowing plasma were made. A 1 cm diameter biasable sphere was placed in the ion-free near wake region of a 10 cm diameter disk immersed in a Mach 8 pulsed flowing plasma. The current-voltage characteristic of the sphere was observed as a function of time as the sphere bias was scanned from -5000 V to +1000 V. The collected current is found to be monotonically increasing with increasing positive bias voltage but exhibits a threshold voltage for current collection as the bias voltage becomes more negative. Potential measurements in the wake region were made for a sphere bias voltages below, at, and above the current collection threshold for a number of times during the wake formation period. The time evolution of the potential profile is shown to change as the sheath around the biased sphere is established. Predictions from the particle trajectory code SIMION are compared with data, showing excellent agreement in the prediction of the current collection threshold.

Meassick, S.↗

NASA NTRS1995

Monolithically interconnected GaAs solar cells: A new interconnection technology for high voltage solar cell output

Photovoltaic linear concentrator arrays can benefit from high performance solar cell technologies being developed at AstroPower. Specifically, these are the integration of thin GaAs solar cell and epitaxial lateral overgrowth technologies with the application of monolithically interconnected solar cell (MISC) techniques. This MISC array has several advantages which make it ideal for space concentrator systems. These are high system voltage, reliable low cost monolithically formed interconnections, design flexibility, costs that are independent of array voltage, and low power loss from shorts, opens, and impact damage. This concentrator solar cell will incorporate the benefits of light trapping by growing the device active layers over a low-cost, simple, PECVD deposited silicon/silicon dioxide Bragg reflector. The high voltage-low current output results in minimal 12R losses while properly designing the device allows for minimal shading and resistance losses. It is possible to obtain open circuit voltages as high as 67 volts/cm of solar cell length with existing technology. The projected power density for the high performance device is 5 kW/m for an AMO efficiency of 26% at 1 5X. Concentrator solar cell arrays are necessary to meet the power requirements of specific mission platforms and can supply high voltage power for electric propulsion systems. It is anticipated that the high efficiency, GaAs monolithically interconnected linear concentrator solar cell array will enjoy widespread application for space based solar power needs. Additional applications include remote man-portable or ultra-light unmanned air vehicle (UAV) power supplies where high power per area, high radiation hardness and a high bus voltage or low bus current are important. The monolithic approach has a number of inherent advantages, including reduced cost per interconnect and increased reliability of array connections. There is also a high potential for a large number of consumer products. Dual-use applications can include battery chargers and remote power supplies for consumer electronics products such as portable telephones/beepers, portable radios, CD players, dashboard radar detectors, remote walkway lighting, etc.

Dinetta, L. C.↗

NASA NTRS1998

Random Dopant Induced Threshold Voltage Lowering and Fluctuations in Sub-0.1 (micron)meter MOSFET's: A 3-D 'Atomistic' Simulation Study

A three-dimensional (3-D) "atomistic" simulation study of random dopant induced threshold voltage lowering and fluctuations in sub-0.1 microns MOSFET's is presented. For the first time a systematic analysis of random dopant effects down to an individual dopant level was carried out in 3-D on a scale sufficient to provide quantitative statistical predictions. Efficient algorithms based on a single multigrid solution of the Poisson equation followed by the solution of a simplified current continuity equation are used in the simulations. The effects of various MOSFET design parameters, including the channel length and width, oxide thickness and channel doping, on the threshold voltage lowering and fluctuations are studied using typical samples of 200 atomistically different MOSFET's. The atomistic results for the threshold voltage fluctuations were compared with two analytical models based on dopant number fluctuations. Although the analytical models predict the general trends in the threshold voltage fluctuations, they fail to describe quantitatively the magnitude of the fluctuations. The distribution of the atomistically calculated threshold voltage and its correlation with the number of dopants in the channel of the MOSFET's was analyzed based on a sample of 2500 microscopically different devices. The detailed analysis shows that the threshold voltage fluctuations are determined not only by the fluctuation in the dopant number, but also in the dopant position.

Asenov, Asen↗

NASA NTRS1988

Effect of a longitudinally applied voltage upon the growth of Zea mays seedlings

The electrical parameters that affect young seedling growth were investigated. Voltages ranging from 5 to 40 volts were applied longitudinally along the mesocotyl region of 4-day old Zea mays L. (cv Silver Queen) seedlings for periods of 3 or 4 hours. It was determined that: (a) making the tips of the seedlings electrically positive relative to the base strongly inhibited shoot growth at 5 volts, whereas the reverse polarity had no effect; (b) at higher voltages, making the tip of the seedlings negative caused less growth inhibition than the reverse polarity at each voltage level; (c) the higher the applied voltage the greater the degree of inhibition; and, (d) the more growth inhibition experienced by the plants the poorer, and slower, their recovery. Previous observations of a relationship between the amount of free indole-3-acetic acid in the mesocotyl cortex and the growth rate of the mesocotyl and of gravitropism-induced movement of labeled indole-3-acetic acid from the seed to the shoot lead to the prediction of a voltage-dependent gating of the movement of indole-3-acetic acid from the stele to the cortex. This provided the basis for attempting to alter the growth rate of seedlings by means of an applied voltage.

NASA Program Space Biology↗