Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “Topological phases”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 451 records · Page 25

Topology Hierarchy of Transition Metal Dichalcogenides Built from Quantum Spin Hall Layers

The evolution of the physical properties of 2D material from monolayer limit to the bulk reveals unique consequences from dimension confinement and provides a distinct tuning knob for applications. Monolayer 1T'-phase transition metal dichalcogenides (1T'-TMDs) with ubiquitous quantum spin Hall (QSH) states are ideal 2D building blocks of various 3D topological phases. However, the stacking geometry has been previously limited to the bulk 1T'-WTe 2 type. Here, the novel 2M-TMDs consisting of translationally stacked 1T'-monolayers are introduced as promising material platforms with tunable inverted bandgaps and interlayer coupling. By performing advanced polarization-dependent angle-resolved photoemission spectroscopy as well as first-principles calculations on the electronic structure of 2M-TMDs, a topology hierarchy is revealed: 2M-WSe 2 , MoS 2 , and MoSe 2 are weak topological insulators (WTIs), whereas 2M-WS 2 is a strong topological insulator (STI). Further demonstration of topological phase transitions by tunning interlayer distance indicates that band inversion amplitude and interlayer coupling jointly determine different topological states in 2M-TMDs. Finally, it is proposed that 2M-TMDs are parent compounds of various exotic phases including topological superconductors and promise great application potentials in quantum electronics due to their flexibility in patterning with 2D materials.

36 MATERIALS SCIENCE↗

Geometric Phase in Anisotropic Kepler Problem: Perspective for Realization in Rydberg Atoms

We predict a gyroscopic effect that can be demonstrated with Rydberg atoms following the dynamics of a Kepler Hamiltonian with an additional uniaxial anisotropy induced by optical ponderomotive force. This effect is analogous to the rotation of the Foucault pendulum in response to the Earth’s rotation. Furthermore, we argue that in Rydberg states with a large principal quantum number a similar geometric angle can be generated by mechanical rotations of an atomic-optical setup on timescales between 1 μ⁢s and 1 ms.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DC-Link Capacitor Design for a Neutral-Point-Less Three-Level Dual-Phase Inverter for Traction Application

Conventional multilevel inverters, such as neutral￾point-clamped and T-type inverters, have gained popularity in electric vehicle applications due to their advantages, including high voltage range, high power capability, low switching losses, low total harmonic distortion, and low electromagnetic interference. However, these traditional multilevel inverters require a neutral point connection to generate a zero-voltage vector. The neutral point current oscillates at three times the fundamental frequency, leading to voltage imbalance and overvoltage stress on the power modules. Additionally, the use of two stacked DC-link capacitors increases the volume required for the same overall capacitance and complicates packaging due to ripple current and heat dissipation from separate components. This is a significant concern for traction drive units, where space is limited. In this paper, a neutral-point-less multilevel dual three￾phase inverter topology is investigated for traction inverter applications. Simulation results demonstrate that the proposed topology effectively retains the benefits of multilevel operation while utilizing a single DC-link capacitor. The inverter model was simulated in conjunction with an industry-standard battery model to evaluate the potential for capacitor size reduction compared to a conventional three-level inverter.

33 ADVANCED PROPULSION SYSTEMS↗

Buried Dirac Points in Quantum Spin Hall Insulators: Implications for Majorana Kramers Pair-Based Quantum Computing

Quantum spin Hall insulators (QSHIs) host helical electronic edge states that are protected from backscattering due to time-reversal symmetry (TRS). Despite considerable work investigating QSHI edge states, there is still an open question about their unexpected resilience to large magnetic fields where TRS is undoubtedly broken. In this work, we investigate the transport properties of helical edge states in a QSHI-superconductor (QSHI-SC) junction formed by a In⁢As(15 nm)/Ga⁢Sb(5 nm) double quantum well and a superconducting tantalum (Ta) constriction. We observe a robust conductance plateau up to 2 T, signaling resilient edge-state transport. Using a modified Landauer-Büttiker analysis, we find that the zero-field conductance is consistent with 98% Andreev-reflection probability owing to the high transparency of the (In⁢As/Ga⁢Sb)-Ta interface. Such resilience is consistent with the Dirac point for the edge states being buried in the bulk valence band. We further theoretically show that a buried Dirac point does not affect the robustness of the quasi-one-dimensional topological superconducting phase. We find that a buried Dirac point favors the hybridization of Majorana Kramers pairs (MKPs)—predicted to exist in a QSHI-SC constriction—and fermionic modes in the QSHI vacuum edge resulting in extended MKP states, highlighting the subtle role of buried Dirac points in probing MKPs.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Spin Texture Control and Magnetic Gap Engineering in a Ferromagnetic Insulator–Topological Insulator Sandwiched Heterostructure

Quantum materials that combine magnetism with topological order are emerging as key platforms for next-generation spintronics and low-energy electronics. They enable the realization of emergent quantum phenomena, such as the quantum anomalous Hall effect and axion insulator states. The ferromagnetic insulator (FMI)/topological insulator (TI)/FMI sandwich structure of a single-septuple layer (1SL) MnBi 2 Te 4 /four-quintuple layer (4QL) Bi 2 Te 3 /1SL MnBi 2 Te 4 holds great potential to achieve such desirable quantum phenomena at an elevated temperature, owing to its large Dirac point band gap and high Curie temperature. Here, for this work, spin- and angle-resolved photoemission spectroscopy (spin-ARPES) is employed to directly verify that the band gap arises from broken time-reversal symmetry via proximity-driven magnetization. This study demonstrates direct control of the spin state via external magnetic fields and unambiguously confirms the exchange interaction as the gap-opening mechanism. The robust magnetic gap and controllable spin texture make this heterostructure a suitable candidate for spintronic applications and magnetic topological quantum phases.

exchange gap↗

Light-induced anomalous Hall conductivity in the massive three-dimensional Dirac semimetal Co 3 ⁢Sn 2 ⁢S 2

Weyl semimetals can emerge from Dirac semimetals when the time-reversal or spatial-inversion symmetries are broken. Recently, it has been proposed based on Floquet theory that Dirac semimetals can be converted into Weyl semimetals even by shining circularly polarized light (CPL). Here we have investigated the possibility of such a Dirac-Weyl conversion by measuring the CPL-induced anomalous Hall conductivity (AHC) in a massive 3D Dirac semimetal Co 3 ⁢Sn 2 ⁢S 2 in the paramagnetic phase using ultrafast midinfrared pump-terahertz Faraday rotation probe spectroscopy. We find that the field-strength and driving frequency dependence of the observed AHC is well accounted for by CPL-induced nonzero Berry curvature associated with the splitting of the Dirac bands as predicted by the Floquet theory. As a result, the estimated splitting of the Dirac bands reaches about 60% of the mass gap and the calculated CPL-induced AHC quantitatively reproduces the experimental observation, demonstrating a promising route toward the realization of Floquet-Weyl states from massive Dirac semimetals.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Metal-to-insulator transition in oxide semimetals by anion doping

Dirac semimetals exhibiting nontrivial topological characteristics stand as exemplary parent compounds, offering great promise for the realization of novel electronic states. These materials also serve as a versatile platform for systematically investigating topological quantum phase transitions. In this study, we present compelling evidence of profound structural and transport phase shifts in a recently uncovered oxide Dirac semimetal, SrNbO3, achieved through effective in situ anion doping. Notably, a remarkable increase in resistivity of more than three orders of magnitude at room temperature is observed upon nitrogen-doping. The extent of electronic modulation in SrNbO3 is strongly correlated with the misfit strain, underscoring its phase instability to both chemical doping and crystallographic symmetry variations. Using first-principles calculations, we discern that elevating the level of nitrogen doping induces an upward shift in the conductive bands of SrNbO3-?N?. Consequently, a transition from a metallic state to an insulating state becomes apparent as the nitrogen concentration reaches a threshold of 1/3. This investigation sheds light on the potential of anion engineering in oxide Dirac semimetals, offering pathways for manipulating their physical properties. These insights hold promise for future applications that harness these materials for tailored functionalities.

Hong, Haitao↗

Emergent layer stacking arrangements in c-axis confined MoTe 2

The layer stacking order in 2D materials strongly affects functional properties and holds promise for next-generation electronic devices. In bulk, octahedral MoTe 2 possesses two stacking arrangements, the ferroelectric Weyl semimetal T d phase and the higher-order topological insulator 1T' phase. However, in thin flakes of MoTe 2 , it is unclear if the layer stacking follows the T d , 1T', or an alternative stacking sequence. Here, we use atomic-resolution scanning transmission electron microscopy to directly visualize the MoTe 2 layer stacking. In thin flakes, we observe highly disordered stacking, with nanoscale 1T' and T d domains, as well as alternative stacking arrangements not found in the bulk. We attribute these findings to intrinsic confinement effects on the MoTe 2 stacking-dependent free energy. Our results are important for the understanding of exotic physics displayed in MoTe 2 flakes. More broadly, this work suggests c-axis confinement as a method to influence layer stacking in other 2D materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Elucidating the active phases of CoOx films on Au(111) in the CO oxidation reaction

Abstract Noble metals supported on reducible oxides, like CoO x and TiO x , exhibit superior activity in many chemical reactions, but the origin of the increased activity is not well understood. To answer this question we studied thin films of CoO x supported on an Au(111) single crystal surface as a model for the CO oxidation reaction. We show that three reaction regimes exist in response to chemical and topographic restructuring of the CoO x catalyst as a function of reactant gas phase CO/O 2 stoichiometry and temperature. Under oxygen-lean conditions and moderate temperatures (≤150 °C), partially oxidized films (CoO x<1 ) containing Co 0 were found to be efficient catalysts. In contrast, stoichiometric CoO films containing only Co 2+ form carbonates in the presence of CO that poison the reaction below 300 °C. Under oxygen-rich conditions a more oxidized catalyst phase (CoO x>1 ) forms containing Co 3+ species that are effective in a wide temperature range. Resonant photoemission spectroscopy (ResPES) revealed the unique role of Co 3+ sites in catalyzing the CO oxidation. Density function theory (DFT) calculations provided deeper insights into the pathway and free energy barriers for the reactions on these oxide phases. These findings in this work highlight the versatility of catalysts and their evolution to form different active phases, both topological and chemically, in response to reaction conditions exposing a new paradigm in the catalyst structure during operation.

Chen, Hao (ORCID:0000000337598352)↗

Time-reversal symmetry-breaking charge order in a kagome superconductor

The kagome lattice 1 , which is the most prominent structural motif in quantum physics, benefits from inherent non-trivial geometry so that it can host diverse quantum phases, ranging from spin-liquid phases, to topological matter, to intertwined orders 2,3,4,5,6,7,8 and, most rarely, to unconventional superconductivity 6,9 . Recently, charge sensitive probes have indicated that the kagome superconductors AV 3 Sb 5 (A = K, Rb, Cs) 9,10,11 exhibit unconventional chiral charge order 12,13,14,15,16,17,18,19, which is analogous to the long-sought-after quantum order in the Haldane model 20 or Varma model 21 . However, direct evidence for the time-reversal symmetry breaking of the charge order remains elusive. Here we use muon spin relaxation to probe the kagome charge order and superconductivity in KV 3 Sb 5 . We observe a noticeable enhancement of the internal field width sensed by the muon ensemble, which takes place just below the charge ordering temperature and persists into the superconducting state. Notably, the muon spin relaxation rate below the charge ordering temperature is substantially enhanced by applying an external magnetic field. We further show the multigap nature of superconductivity in KV 3 Sb 5 and that the T c /λ$^{-2}_{ab}$ ratio (where T c is the superconducting transition temperature and λ ab is the magnetic penetration depth in the kagome plane) is comparable to those of unconventional high-temperature superconductors. Our results point to time-reversal symmetry-breaking charge order intertwining with unconventional superconductivity in the correlated kagome lattice.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Coherent correlation imaging for resolving fluctuating states of matter

Fluctuations and stochastic transitions are ubiquitous in nanometre-scale systems, especially in the presence of disorder. However, their direct observation has so far been impeded by a seemingly fundamental, signal-limited compromise between spatial and temporal resolution. Here we develop coherent correlation imaging (CCI) to overcome this dilemma. Our method begins by classifying recorded camera frames in Fourier space. Contrast and spatial resolution emerge by averaging selectively over same-state frames. Temporal resolution down to the acquisition time of a single frame arises independently from an exceptionally low misclassification rate, which we achieve by combining a correlation-based similarity metric with a modified, iterative hierarchical clustering algorithm. We apply CCI to study previously inaccessible magnetic fluctuations in a highly degenerate magnetic stripe domain state with nanometre-scale resolution. We uncover an intricate network of transitions between more than 30 discrete states. Our spatiotemporal data enable us to reconstruct the pinning energy landscape and to thereby explain the dynamics observed on a microscopic level. CCI massively expands the potential of emerging high-coherence X-ray sources and paves the way for addressing large fundamental questions such as the contribution of pinning and topology in phase transitions and the role of spin and charge order fluctuations in high-temperature superconductivity.

36 MATERIALS SCIENCE↗

Chiral limit and origin of topological flat bands in twisted transition metal dichalcogenide homobilayers

Abstract The observation of zero field fractional quantum Hall analogs in twisted transition metal dichalcogenides (TMDs) asks for a deeper understanding of what mechanisms lead to topological flat bands in two-dimensional heterostructures, and what makes TMDs an excellent platform for topologically ordered phases, surpassing twisted bilayer graphene. To this aim, we explore the chiral limits of massive Dirac theories applicable toC 3 -symmetric moiré materials, and show their relevance for both bilayer graphene and TMD homobilayers. In the latter, the Berry curvature of valence bands leads to relativistic corrections of the moiré potential that promote band flattening, and permit a limit with exactly flat bands with nonzero Chern number. The relativistic corrections enter as alayer-orbit coupling, analogous to spin-orbit coupling for relativistic Dirac fermions, which we show is non-negligible on the moiré scale. The Berry curvature of the TMD monolayers therefore plays an essential role in the flattening of moiré Chern bands in these heterostructures.

Physics↗

Spectroscopic evidence of intra-unit-cell charge redistribution in a charge-neutral magnetic topological insulator

The magnetic topological insulator MnBi 6 Te 10 has emerged as a promising candidate for realizing the quantum anomalous Hall effect (QAHE), owing to its ability to retain ferromagnetism through precise control of anti-site defects. The next important task for realizing the QAHE is to tune the chemical potential into the energy gap formed by the broken time-reversal symmetry. Here we reveal an intra-unit-cell charge redistribution even when the overall doping suggests a near-charge-neutral condition. By performing time- and angle-resolved photoemission spectroscopy (trARPES) on the optimally 18% Sb-doped MnBi 6 Te 10 , we observe transient surface photovoltage (SPV) effects on both the MnBi 2 Te 4 and single-Bi 2 Te 3 terminations. Furthermore, we observe a time-dependent splitting of the band structure indicating multiple SPV shifts with different magnitudes. This observation suggests that adjacent plateaus with nominally the same terminating layer exhibit a strong intra-unit-cell charge redistribution, resulting in spontaneous electrical polarization. This is consistent with static micro-ARPES measurements revealing significant doping deviations from the charge-neutral configuration. Our findings underscore the challenges of engineering the family of Mn-Bi-Te materials to realize QAHE purely through chemical doping. Achieving the desired topological quantum phase requires both a uniform carrier doping and a ferromagnetic ground state. Furthermore, the light-induced polarization within each unit cell of ferromagnetic Mn(Bi 0.82 Sb 0.18 ) 6 Te 10 may open new possibilities for optoelectronic and spintronics.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Majorana bound states with chiral magnetic textures

The aim of this Tutorial is to give a pedagogical introduction into realizations of Majorana fermions, usually termed as Majorana bound states (MBSs), in condensed matter systems with magnetic textures. We begin by considering the Kitaev chain model of “spinless” fermions and show how two “half” fermions can appear at chain ends due to interactions. By considering this model and its two-dimensional generalization, we emphasize intricate relation between topological superconductivity and possible realizations of MBS. We further discuss how “spinless” fermions can be realized in more physical systems, e.g., by employing the spin-momentum locking. Next, we demonstrate how magnetic textures can be used to induce synthetic or fictitious spin–orbit interactions, and, thus, stabilize MBS. We describe a general approach that works for arbitrary textures and apply it to skyrmions. We show how MBS can be stabilized by elongated skyrmions, certain higher order skyrmions, and chains of skyrmions. We also discuss how braiding operations can be performed with MBS stabilized on magnetic skyrmions. Furthermore, this Tutorial is aimed at students at the graduate level.

36 MATERIALS SCIENCE↗

Classifying photonic topology using the spectral localizer and numerical K -theory

Recently, the spectral localizer framework has emerged as an efficient approach for classifying topology in photonic systems featuring local nonlinearities and radiative environments. In nonlinear systems, this framework provides rigorous definitions for concepts such as topological solitons and topological dynamics, where a system’s occupation induces a local change in its topology due to nonlinearity. For systems embedded in radiative environments that do not possess a shared bulk spectral gap, this framework enables the identification of local topology and shows that local topological protection is preserved despite the lack of a common gap. However, as the spectral localizer framework is rooted in the mathematics of C*-algebras, and not vector bundles, understanding and using this framework requires developing intuition for a somewhat different set of underlying concepts than those that appear in traditional approaches for classifying material topology. In this tutorial, we introduce the spectral localizer framework from a ground-up perspective and provide physically motivated arguments for understanding its local topological markers and associated local measure of topological protection. In doing so, we provide numerous examples of the framework’s application to a variety of topological classes, including crystalline and higher-order topology. We then show how Maxwell’s equations can be reformulated to be compatible with the spectral localizer framework, including the possibility of radiative boundary conditions. To aid in this introduction, we also provide a physics-oriented introduction to multi-operator pseudospectral methods and numerical K-theory, two mathematical concepts that form the foundation for the spectral localizer framework. Finally, we provide some mathematically oriented comments on the C*-algebraic origins of this framework, including a discussion of real C*-algebras and graded C*-algebras that are necessary for incorporating physical symmetries. Looking forward, we hope that this tutorial will serve as an approachable starting point for learning the foundations of the spectral localizer framework.

97 MATHEMATICS AND COMPUTING↗

Synthesis and transport properties of epitaxial Bi (111) films on GaAs (111) substrates

In recent decades, the growth of ultrathin epitaxial bismuth (Bi) films on various substrates has garnered interest due to their unique electronic properties. We report upon the growth and electrical transport properties of epitaxial Bi (111) films in the thickness range of 5–32 nm deposited directly on GaAs (111) substrates, without a buffer layer. The quality of Bi films is found to depend on conditions for substrate treatment using Ar + ion-milling and annealing. Substrates milled at low ion beam currents display poor surface reconstruction after annealing, which hinders the growth of high-quality films. In contrast, substrates milled under optimized conditions led to reconstructed surfaces upon annealing, resulting in epitaxial Bi films with predominantly single-domain orientation. Although epitaxial films formed in both cases, transport measurements indicated significantly higher conductivity for films grown on optimally treated substrates. Measurements at low temperatures suggest that the transport properties are dominated by a surface state with high mobility electrons. Magneto-transport measurements suggest that conductivity and mobility improve progressively with increasing film thickness. For the thinnest 5 nm film, a hole-like state emerges, presumably as the electron-like state is gapped out. These results provide a robust methodology for growing high-quality epitaxial Bi films on GaAs (111) and offer insights into their unique transport properties and our ability to tune them.

Atomic force microscopy↗

Visualizing the interplay of Dirac mass gap and magnetism at nanoscale in intrinsic magnetic topological insulators

In intrinsic magnetic topological insulators, Dirac surface-state gaps are prerequisites for quantum anomalous Hall and axion insulating states. Unambiguous experimental identification of these gaps has proved to be a challenge, however. Here, we use molecular beam epitaxy to grow intrinsic MnBi 2 Te 4 thin films. Using scanning tunneling microscopy/spectroscopy, we directly visualize the Dirac mass gap and its disappearance below and above the magnetic order temperature. We further reveal the interplay of Dirac mass gaps and local magnetic defects. We find that, in high defect regions, the Dirac mass gap collapses. Ab initio and coupled Dirac cone model calculations provide insight into the microscopic origin of the correlation between defect density and spatial gap variations. Finally, this work provides unambiguous identification of the Dirac mass gap in MnBi 2 Te 4 and, by revealing the microscopic origin of its gap variation, establishes a material design principle for realizing exotic states in intrinsic magnetic topological insulators.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Morphogenesis of spin cycloids in a noncollinear antiferromagnet

Pattern formation in spin systems with continuous-rotational symmetry (CRS) provides a powerful platform to study emergent complex magnetic phases and topological defects in condensed-matter physics. However, its understanding and correlation with unconventional magnetic order along with high-resolution nanoscale imaging are challenging. Here, we employ scanning nitrogen vacancy (NV) magnetometry to unveil the morphogenesis of spin cycloids at both the local and global scales within a single ferroelectric domain of (111)-oriented BiFeO 3 , which is a noncollinear antiferromagnet, resulting in formation of a glassy labyrinthine pattern. We find that the domains of locally oriented cycloids are interconnected by an array of topological defects and exhibit isotropic energy landscape predicted by first-principles calculations. We propose that the CRS of spin-cycloid propagation directions within the (111) drives the formation of the labyrinthine pattern and the associated topological defects such as antiferromagnetic skyrmions. Unexpectedly, reversing the as-grown ferroelectric polarization from [$\overline{1}$ $\overline{1}$ $\overline{1}$] to [111] produces a noncycloidal NV image contrast which ¯ could be attributed to either the emergence of a uniformly magnetized state or a reversal of the cycloid polarity. These findings highlight that (111)-oriented BiFeO 3 is not only important for studying the fascinating subject of pattern formation but could also be utilized as an ideal platform for integrating novel topological defects in the field of antiferromagnetic spintronics.

magnetoelectric↗