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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 451 records · Page 25
All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

Molecular flexure and atom trapping with sexiphenyl molecules by scanning tunneling microscope manipulation

Molecular flexure, and molecule-metal contact of para-sexiphenyl molecules on a Ag(111) surface are investigated by using low temperature scanning tunneling microscopy, and molecular manipulations. Atom trapping with sexiphenyl molecules is realized by laterally manipulating the molecules onto individual silver atoms and up to three silver atoms have been trapped. We also demonstrate breaking of a silver dimer into individual silver atoms by atom trapping. STM manipulation experiments show that the molecule-metal complexes formed by the atom trapping are mechanically stable. Moreover, Lateral manipulation of a single sexiphenyl across a Ag(111) atomic step highlights how the molecule moves across step-edges; the molecule can easily conform across the step and it recovers original configuration after the manipulation.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Ion Trapping, Storage, and Ejection in Structures for Lossless Ion Manipulations

Here, a structure for lossless ion manipulation (SLIM) module was constructed with electrode arrays patterned on a pair of parallel printed circuit boards (PCB) separated by 5 mm and utilized to investigate capabilities for ion trapping at 4 Torr. Positive ions were confined by application of RF having alternating phases on a series of inner rung electrodes and by positive DC potentials on surrounding guard electrodes on each PCB. An axial DC field was also introduced by stepwise varying the DC potential of the inner rung electrodes so as to control the ion transport and accumulation inside the ion trap. We show that ions could be trapped and accumulated with 100% efficiency, stored for at least 5 hours with no losses, and could be rapidly ejected from the SLIM trap.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2020

Uncovering the Role of Hole Traps in Promoting Hole Transfer from Multiexcitonic Quantum Dots to Molecular Acceptors

The understanding of electronic dynamics in multiexcitonic quantum dots (QDs) is important for designing efficient systems useful in high power scenarios, such as solar concentrators and multielectron charge transfer. The multiple charge carriers within a QD can undergo undesired Auger recombination events, which rapidly annihilate carriers on picosecond time scales and generate heat from absorbed photons instead of useful work. Compared to the transfer of multiple electrons, the transfer of multiple holes has proven to be more difficult due to slower hole transfer rates. To probe the competition between Auger recombination and hole transfer in CdSe, CdS, and CdSe/CdS QDs of varying sizes, we synthesized a phenothiazine derivative with optimized functionalities for binding to QDs as a hole accepting ligand and for spectroscopic observation of hole transfer. Transient absorption spectroscopy was used to monitor the photoinduced absorption features from both trapped holes and oxidized ligands under excitation fluences where the averaged initial number of excitons in a QD ranged from ~1 to 19. We observed fluence-dependent hole transfer kinetics that last around 100 ps longer than the predicted Auger recombination lifetimes, and the transfer of up to 3 holes per QD. Theoretical modeling of the kinetics suggests that binding of hole acceptors introduces trapping states significantly different from those in native QDs passivated with oleate ligands. Holes in these modified trap states have prolonged lifetimes, which promotes the hole transfer efficiency. These results highlight the beneficial role of hole-trapping states in devising hole transfer pathways in QD-based systems under multiexcitonic conditions.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Nanoscale Periodic Trapping Sites for Interlayer Excitons Built by Deformable Molecular Crystal on 2D Crystal

The nanoscale moiré pattern formed at 2D transition-metal dichalcogenide crystal (TMDC) heterostructures provides periodic trapping sites for excitons, which is essential for realizing various exotic phases such as artificial exciton lattices, Bose–Einstein condensates, and exciton insulators. At organic molecule/TMDC heterostructures, similar periodic potentials can be formed via other degrees of freedom. Here, we utilize the structure deformability of a 2D molecular crystal as a degree of freedom to create a periodic nanoscale potential that can trap interlayer excitons (IXs). Specifically, two semiconducting molecules, PTCDI and PTCDA, which possess similar band gaps and ionization potentials but form different lattice structures on MoS 2 , are investigated. The PTCDI lattice on MoS 2 is distorted geometrically, which lifts the degeneracy of the two molecules within the crystal’s unit cell. The degeneracy lifting results in a spatial variation of the molecular orbital energy, with an amplitude and periodicity of ~0.2 eV and ~2 nm, respectively. On the other hand, no such energy variation is observed in PTCDA/MoS 2 , where the PTCDA lattice is much less distorted. Furthermore, the periodic variation in molecular orbital energies provides effective trapping sites for IXs. For IXs formed at PTCDI/MoS 2 , rapid spatial localization of the electron in the organic layer toward the interface is observed, which demonstrates the effectiveness of these interfacial IX traps.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2026

Electronic Trap-State Modulation in Sm-Doped SnO 2 Nanofibers Enables Ultrasensitive Hydrogen Sensing

The demand for sub-ppm hydrogen (H 2 ) sensing is growing across emerging applications such as environmental monitoring, breath-based disease diagnostics, and early-stage battery failure detection. However, achieving reliable ppb-level detection with chemiresistive metal oxide sensors remains challenging. At trace gas concentrations, resistance modulation is often insufficient, particularly in the absence of noble metal catalysts. Here, we report samarium-doped tin dioxide (Sm-SnO 2 ) nanofibers in which electronic trap-state modulation is exploited to enable ultrasensitive hydrogen sensing. The 2 at% Sm-doped SnO 2 nanofibers exhibited markedly enhanced H 2 sensitivity, achieving clear detection down to 25 ppb H 2 at 200 °C, with a theoretical limit of detection of 4.5 ppb, placing this material among the most sensitive noble-metal-free SnO 2 -based H 2 sensors reported to date. Mechanistic investigations through X-ray photoelectron spectroscopy and electron energy loss spectroscopy revealed that Sm 3+ doping introduces deep trap states associated with charge-compensating defect complexes. These states reduce free carrier density, increase baseline resistance, and enable trap-assisted charge release during H 2 exposure, thereby amplifying the sensing response. Trap-state engineering via rare-earth doping, exemplified by Sm-SnO 2 , provides an effective pathway for achieving ppb-level hydrogen detection in noble-metal-free chemiresistive sensors.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2013

Temporally, spatially, and spectrally resolved barrier discharge produced in trapped helium gas at atmospheric pressure

Experimental study was made on induced effects by trapped helium gas in the pulsed positive dielectric barrier discharge (DBD) operating in symmetrical electrode configuration at atmospheric pressure. Using fast photography technique and electrical measurements, the differences in the discharge regimes between the stationary and the flowing helium are investigated. It was shown experimentally that the trapped gas atmosphere (TGA) has notable impact on the barrier discharge regime compared with the influence of the flowing gas atmosphere. According to our experimental results, the DBD discharge produced in trapped helium gas can be categorized as a multi-glow (pseudo-glow) discharge, each discharge working in the sub-normal glow regime. This conclusion is made by considering the duration of current pulse (few {mu}s), their maximum values (tens of mA), the presence of negative slope on the voltage-current characteristic, and the spatio-temporal evolution of the most representative excited species in the discharge gap. The paper focuses on the space-time distribution of the active species with a view to better understand the pseudo-glow discharge mechanism. The physical basis for these effects was suggested. A transition to filamentary discharge is suppressed in TGA mode due to the formation of supplementary source of seed electrons by surface processes (by desorption of electrons due to vibrationally excited nitrogen molecules, originated from barriers surfaces) rather than volume processes (by enhanced Penning ionisation). Finally, we show that the pseudo-glow discharge can be generated by working gas trapping only; maintaining unchanged all the electrical and constructive parameters.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2013

A review of pressure anisotropy caused by electron trapping in collisionless plasma, and its implications for magnetic reconnection

From spacecraft data, it is evident that electron pressure anisotropy develops in collisionless plasmas. This is in contrast to the results of theoretical investigations, which suggest this anisotropy should be limited. Common for such theoretical studies is that the effects of electron trapping are not included; simply speaking, electron trapping is a non-linear effect and is, therefore, eliminated when utilizing the standard methods for linearizing the underlying kinetic equations. Here, we review our recent work on the anisotropy that develops when retaining the effects of electron trapping. A general analytic model is derived for the electron guiding center distribution f(v{sub ∥},v{sub ⊥}) of an expanding flux tube. The model is consistent with anisotropic distributions observed by spacecraft, and is applied as a fluid closure yielding anisotropic equations of state for the parallel and perpendicular components (relative to the local magnetic field direction) of the electron pressure. In the context of reconnection, the new closure accounts for the strong pressure anisotropy that develops in the reconnection regions. It is shown that for generic reconnection in a collisionless plasma nearly all thermal electrons are trapped, and dominate the properties of the electron fluid. A new numerical code is developed implementing the anisotropic closure within the standard two-fluid framework. The code accurately reproduces the detailed structure of the reconnection region observed in fully kinetic simulations. These results emphasize the important role of pressure anisotropy for the reconnection process. In particular, for reconnection geometries characterized by small values of the normalized upstream electron pressure, β{sub e∞}, the pressure anisotropy becomes large with p{sub ∥}≫p{sub ⊥} and strong parallel electric fields develop in conjunction with this anisotropy. The parallel electric fields can be sustained over large spatial scales and, therefore, become important for electron acceleration.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2013

Study of electron trapping by a transversely ellipsoidal bubble in the laser wake-field acceleration

We present electron trapping in an ellipsoidal bubble which is not well explained by the spherical bubble model by [Kostyukov et al., Phys. Rev. Lett. 103, 175003 (2009)]. The formation of an ellipsoidal bubble, which is elongated transversely, frequently occurs when the spot size of the laser pulse is large compared to the plasma wavelength. First, we introduce the relation between the bubble size and the field slope inside the bubble in longitudinal and transverse directions. Then, we provide an ellipsoidal model of the bubble potential and investigate the electron trapping condition by numerical integration of the equations of motion. We found that the ellipsoidal model gives a significantly less restrictive trapping condition than that of the spherical bubble model. The trapping condition is compared with three-dimensional particle-in-cell simulations and the electron trajectory in test potential simulations.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2013

Trap states in AlGaN channel high-electron-mobility transistors

Frequency dependent capacitance and conductance measurements were performed to analyze the trap states in the AlGaN channel high-electron-mobility transistors (HEMTs). The trap state density in the AlGaN channel HEMTs decreases from 1.26 × 10{sup 13} cm{sup −2}eV{sup −1} at the energy of 0.33 eV to 4.35 × 10{sup 11} cm{sup −2}eV{sup −1} at 0.40 eV. Compared with GaN channel HEMTs, the trap states in the AlGaN channel HEMTs have deeper energy levels. The trap with deeper energy levels in the AlGaN channel HEMTs is another reason for the reduction of the reverse gate leakage current besides the higher Schottky barrier height.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2013

Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors

We investigate the energy levels of electron traps in AlGaN/GaN high electron mobility transistors by the use of electron tunneling spectroscopy. Detailed analysis of a typical spectrum, obtained in a wide gate bias range and with both bias polarities, suggests the existence of electron traps both in the bulk of AlGaN and at the AlGaN/GaN interface. The energy levels of the electron traps have been determined to lie within a 0.5 eV band below the conduction band minimum of AlGaN, and there is strong evidence suggesting that these traps contribute to Frenkel-Poole conduction through the AlGaN barrier.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Investigation of buffer traps in AlGaN/GaN-on-Si devices by thermally stimulated current spectroscopy and back-gating measurement

Thermally stimulated current (TSC) spectroscopy and high-voltage back-gating measurement are utilized to study GaN buffer traps specific to AlGaN/GaN lateral heterojunction structures grown on a low-resistivity Si substrate. Three dominating deep-level traps in GaN buffer with activation energies of ΔE{sub T1} ∼ 0.54 eV, ΔE{sub T2} ∼ 0.65 eV, and ΔE{sub T3} ∼ 0.75 eV are extracted from TSC spectroscopy in a vertical GaN-on-Si structure. High back-gate bias applied to the Si substrate could influence the drain current in an AlGaN/GaN-on-Si high-electron-mobility transistor in a way that cannot be explained with a simple field-effect model. By correlating the trap states identified in TSC with the back-gating measurement results, it is proposed that the ionization/deionization of both donor and acceptor traps are responsible for the generation of buffer space charges, which impose additional modulation to the 2DEG channel.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Deep traps in n-type GaN epilayers grown by plasma assisted molecular beam epitaxy

In this study, we present the results of investigations on Schottky Au-GaN diodes by means of conventional DLTS and Laplace DLTS methods within the temperature range of 77 K–350 K. Undoped GaN layers were grown using the plasma-assisted molecular beam epitaxy technique on commercial GaN/sapphire templates. The quality of the epilayers was studied by micro-Raman spectroscopy (μ-RS) which proved the hexagonal phase and good crystallinity of GaN epilayers as well as a slight strain. The photoluminescence spectrum confirmed a high crystal quality by intense excitonic emission but it also exhibited a blue emission band of low intensity. DLTS signal spectra revealed the presence of four majority traps: two high-temperature and two low-temperature peaks. Using the Laplace DLTS method and Arrhenius plots, the apparent activation energy and capture cross sections were obtained. For two high-temperature majority traps, they were equal to E{sub 1} = 0.65 eV, σ{sub 1} = 8.2 × 10{sup −16} cm{sup 2} and E{sub 2} = 0.58 eV, σ{sub 2} = 2.6 × 10{sup −15} cm{sup 2} whereas for the two low-temperature majority traps they were equal to E{sub 3} = 0.18 eV, σ{sub 3} = 9.7 × 10{sup −18} cm{sup 2} and E{sub 4} = 0.13 eV, σ{sub 4} = 9.2 × 10{sup −18} cm{sup 2}. The possible origin of the traps is discussed and the results are compared with data reported elsewhere.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Low power zinc-oxide based charge trapping memory with embedded silicon nanoparticles via poole-frenkel hole emission

A low power zinc-oxide (ZnO) charge trapping memory with embedded silicon (Si) nanoparticles is demonstrated. The charge trapping layer is formed by spin coating 2 nm silicon nanoparticles between Atomic Layer Deposited ZnO steps. The threshold voltage shift (ΔV{sub t}) vs. programming voltage is studied with and without the silicon nanoparticles. Applying −1 V for 5 s at the gate of the memory with nanoparticles results in a ΔV{sub t} of 3.4 V, and the memory window can be up to 8 V with an excellent retention characteristic (>10 yr). Without nanoparticles, at −1 V programming voltage, the ΔV{sub t} is negligible. In order to get ΔV{sub t} of 3.4 V without nanoparticles, programming voltage in excess of 10 V is required. The negative voltage on the gate programs the memory indicating that holes are being trapped in the charge trapping layer. In addition, at 1 V the electric field across the 3.6 nm tunnel oxide is calculated to be 0.36 MV/cm, which is too small for significant tunneling. Moreover, the ΔV{sub t} vs. electric field across the tunnel oxide shows square root dependence at low fields (E < 1 MV/cm) and a square dependence at higher fields (E > 2.7 MV/cm). This indicates that Poole-Frenkel Effect is the main mechanism for holes emission at low fields and Phonon Assisted Tunneling at higher fields.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Detection of minority carrier traps in p-type 4H-SiC

Contrarily to the case of n-type 4H-SiC, very little is known about the presence of minority carrier traps in p-type epilayers. In this study, we performed the electrical characterization of as-grown, electron irradiated, and thermally oxidized p-type 4H-SiC, by using minority carrier transient spectroscopy. Four minority carrier traps are reported in 1.6–2.3 eV energy range above the valence band edge (E{sub V}). Particular emphasis is given to the mid-gap minority carrier trap (EH{sub 6∕7}) and to its correlation to an energetically close mid-gap majority carrier trap (HK4)

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Investigation of trap states under Schottky contact in GaN/AlGaN/AlN/GaN high electron mobility transistors

Forward gate-bias stress experiments are performed to investigate the variation of trap states under Schottky contact in GaN-based high electron mobility transistors. Traps with activation energy E{sub T} ranging from 0.22 eV to 0.31 eV are detected at the gate-semiconductor interface by dynamic conductance technique. Trap density decreases prominently after stressing, particularly for traps with E{sub T} > 0.24 eV. X-ray photoelectron spectroscopy measurements reveal a weaker Ga-O peak on the stressed semiconductor surface. It is postulated that oxygen is stripped by Ni to form NiO upon electrical stress, contributing to the decrease in O{sub N} donor sates under the gate contact.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Helium gas bubble trapped in liquid helium in high magnetic field

High magnetic field magnets are used widely in the area of the condensed matter physics, material science, chemistry, geochemistry, and biology at the National High Magnetic Field Laboratory. New high field magnets of state-of-the-art are being pursued and developed at the lab, such as the current developing 32 T, 32 mm bore fully superconducting magnet. Liquid Helium (LHe) is used as the coolant for superconducting magnets or samples tested in a high magnetic field. When the magnetic field reaches a relatively high value the boil-off helium gas bubble generated by heat losses in the cryostat can be trapped in the LHe bath in the region where BzdBz/dz is less than negative 2100 T{sup 2}/m, instead of floating up to the top of LHe. Then the magnet or sample in the trapped bubble region may lose efficient cooling. In the development of the 32 T magnet, a prototype Yttrium Barium Copper Oxide coil of 6 double pancakes with an inner diameter of 40 mm and an outer diameter of 140 mm was fabricated and tested in a resistive magnet providing a background field of 15 T. The trapped gas bubble was observed in the tests when the prototype coil was ramped up to 7.5 T at a current of 200 A. This letter reports the test results on the trapped gas bubble and the comparison with the analytical results which shows they are in a good agreement.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Investigation of trap properties in high-k/metal gate p-type metal-oxide-semiconductor field-effect-transistors with aluminum ion implantation using random telegraph noise analysis

In this study, the impact of aluminum ion implantation (Al I/I) on random telegraph noise (RTN) in high-k/metal gate (HK/MG) p-type metal-oxide-semiconductor field-effect-transistors (pMOSFETs) was investigated. The trap parameters of HK/MG pMOSFETs with Al I/I, such as trap energy level, capture time and emission time, activation energies for capture and emission, and trap location in the gate dielectric, were determined. The configuration coordinate diagram was also established. It was observed that the implanted Al could fill defects and form a thin Al{sub 2}O{sub 3} layer and thus increase the tunneling barrier height for holes. It was also observed that the trap position in the Al I/I samples was lower due to the Al I/I-induced dipole at the HfO{sub 2}/SiO{sub 2} interface.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Optical trapping of core-shell magnetic microparticles by cylindrical vector beams

Optical trapping of core-shell magnetic microparticles is experimentally demonstrated by using cylindrical vector beams. Second, we investigate the optical trapping efficiencies. The results show that radially and azimuthally polarized beams exhibit higher axial trapping efficiencies than the Gaussian beam. Finally, a trapped particle is manipulated to kill a cancer cell. The results make possible utilizing magnetic particles for optical manipulation, which is an important advantage for magnetic particles as labeling agent in targeted medicine and biological analysis.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗