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At least 451 records · Page 25

Sensitivity of the simulation of passive neutron emission from UF 6 cylinders to the uncertainties in both 19 F(α,n) energy spectrum and thick target yield of 234 U in UF 6

Interest in safeguards verification measurements using passive thermal neutron counting to assay 235 U content in large 30B UF 6 canisters has grown in recent years. Here, the prohibitively high cost and impracticality of using reference 30B calibration cylinders extensively will likely make accurate simulations of increasing interest. Accuracy of the simulated response will define the confidence in the predicted response and the extent to which simulations can reasonably be relied upon. With 234 U driven 19 F(α, n) reactions being the main neutron source in low enriched UF 6 the uncertainties of the 19 F(α, n) energy spectrum and the thick target yield of 234 U in UF 6 propagate into the uncertainty in the predicted response and represent a major influence of basic nuclear data. Here sensitivity of the simulated total (Singles) and coincidence (Doubles) count rates are assessed for the Passive Neutron Enrichment Meter using six potential 19 F(α, n) neutron energy spectra over a range of enrichments and material distributions. The results indicate that variations in the Singles and Doubles due to simulated (α, n) neutron spectrum are less than 1.5% for this set of simulated neutron spectra, with dependence varying inversely with enrichment. Singles uncertainty is only slightly less than that of the thick target 19 F(α, n) yield corresponding to the primary neutron source, whereas the 19 F(α, n) yield dependence of the Doubles is reduced by the non-negligible 238 U(SF) coincident neutron emissions. Based on available thick target 19 F(α, n) yield estimates the uncertainty is on the order of 5%, establishing this as the main nuclear data limitation when simulating thermal neutron detectors response for 30B UF 6 storage cylinders. Based on these findings, it appears that the measurement and evaluation of the thick target 19 F(α, n) yield for uranium hexafluoride is due.

19F(α,n) neutron spectrum↗

Determination of the effective sample thickness via radiative capture

Our procedure for determining the effective thickness of non-uniform irregular-shaped samples via radiative capture is described. In this technique, partial γ-ray production cross sections of a compound nucleus produced in a neutron-capture reaction are measured using Prompt Gamma Activation Analysis and compared to their corresponding standardized absolute values. For the low-energy transitions, the measured cross sections are lower than their standard values due to significant photoelectric absorption of the γ rays within the bulk-sample volume itself. Using standard theoretical techniques, the amount of γ-ray self absorption and neutron self shielding can then be calculated by iteratively varying the sample thickness until the observed cross sections converge with the known standards. The overall attenuation provides a measure of the effective sample thickness illuminated by the neutron beam. This procedure is illustrated through radiative neutron capture using powdered oxide samples comprising enriched 186 W and 182 W from which their tungsten-equivalent effective thicknesses are deduced to be 0.077(3) mm and 0.042(8) mm, respectively.

(n, γ) radiative capture↗

Predicting Local Material Thickness from Steady-State Ultrasonic Wavefield Measurements Using a Convolutional Neural Network

Acoustic steady-state excitation spatial spectroscopy (ASSESS) is a full-field, ultrasonic non-destructive evaluation (NDE) technique used to locate and characterize defects in plate-like structures. ASSESS generates a steady-state, single-tone ultrasonic excitation in a structure and a scanning laser Doppler Vibrometer (LDV) measures the resulting full-field surface velocity response. Traditional processing techniques for ASSESS data rely on wavenumber domain analysis. This paper presents the alternative use of a convolutional neural network (CNN), trained using simulated ASSESS data, to predict the local plate thickness at every pixel in the wavefield measurement directly. The defect detection accuracy of CNN-based thickness predictions are shown to improve for defects of greater size, and for defects with higher thickness reductions. The CNN demonstrates the ability to predict thickness accurately in regions where Lamb wave dispersion relations are complex or unknown, such as near the boundaries of a test specimen, so long as the CNN is trained on data that accounts for these regions. The CNN also shows generalizability to ASSESS experimental data, despite an entirely simulated training dataset.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Thickness-Dependent Order-to-Order Transitions of Bolaform-like Giant Surfactant in Thin Films

Controlling self-assembled nanostructures in thin films allows the bottom-up fabrication of ordered nanoscale patterns. Here we report the unique thickness-dependent phase behavior in thin films of a bolaform-like giant surfactant, which consists of butyl- and hydroxyl-functionalized polyhedral oligomeric silsesquioxane (BPOSS and DPOSS) cages telechelically located at the chain ends of a polystyrene (PS) chain with 28 repeating monomers on average. In the bulk, BPOSS-PS28-DPOSS forms a double gyroid (DG) phase. Both grazing incidence small angle X-ray scattering and transmission electron microscopy techniques are combined to elucidate the thin film structures. Interestingly, films with thicknesses thinner than 200 nm exhibit an irreversible phase transition from hexagonal perforated layer (HPL) to compressed hexagonally packed cylinders (c-HEX) at 130 °C, while films with thickness larger than 200 nm show an irreversible transition from HPL to DG at 200 °C. The thickness-controlled transition pathway suggests possibilities to obtain diverse patterns via thin film self-assembly.

36 MATERIALS SCIENCE↗

Grain Boundary-Limited Thermal Transport in Suspended Thin Graphite across an Unexplored Thickness Regime

Here, we present systematic thermal conductivity (κ) measurements of suspended thin graphite ribbons, 234–527 nm thick, using a four-probe 3ω method. Unlike recent reports of phonon hydrodynamics and exceptionally high κ in micrometer-thick graphite ( Science, 2020), we observe significantly lower κ and no signatures of collective phonon flow in this intermediate thickness regime. Instead, our measured κ lies between few-layer graphene and bulk graphite. These results agree with a first-principles-informed Peierls–Boltzmann transport model with spatially resolved Monte Carlo sampling. Additionally, the temperature for the peak κ shifts lower with increasing thickness, due to the interplay of phonon-boundary and phonon-isotope scattering. Incorporating grain boundary scattering into simulations is necessary to replicate the experimental trends. These findings delineate the boundary between ballistic, hydrodynamic, and diffusive transport regimes in graphite and underscore the dominant role of disorder and geometry in phonon transport in quasi-two-dimensional materials, offering insights for nanoscale thermal management.

Boltzmann transport model↗

Surface SiO 2 Thickness Controls Uniform-to-Localized Transition in Lithiation of Silicon Anodes for Lithium-Ion Batteries

Silicon is a promising anode material for lithium-ion batteries because of its high capacity, but its widespread adoption has been hampered by a low cycle life arising from mechanical failure and the absence of a stable solid–electrolyte interphase (SEI). Understanding SEI formation and its impact on cycle life is made more complex by the oxidation of silicon materials in air or during synthesis, which leads to SiO x coatings of varying thicknesses that form the true surface of the electrode. Here, the lithiation of SiO 2 -coated Si is studied in a controlled manner using SiO 2 coatings of different thicknesses grown on Si wafers via thermal oxidation. SiO 2 thickness has a profound effect on lithiation: below 2 nm, SEI formation followed by uniform lithiation occurs at positive voltages versus Li/Li + . Si lithiation is reversible, and SiO 2 lithiation is largely irreversible. Above 2 nm SiO 2 , voltammetric currents decrease exponentially with SiO 2 thickness. For 2–3 nm SiO 2 , SEI formation above 0.1 V is suppressed, but a hold at low or negative voltages can initiate charge transfer whereupon SEI formation and uniform lithiation occur. Cycling of Si anodes with an SiO 2 coating thinner than 3 nm occurs at high Coulombic efficiency (CE). If an SiO 2 coating is thicker than 3–4 nm, the behavior is totally different: lithiation at positive voltages is strongly inhibited, and lithiation occurs at poor CE and is highly localized at pinholes which grow over time. As they grow, lithiation becomes more facile and the CE increases. Pinhole growth is proposed to occur via rapid transport of Li along the SiO 2 /Si interface radially outward from an existing pinhole, followed by the lithiation of SiO 2 from the interface outward.

25 ENERGY STORAGE↗

Impact of Layer Thickness on the Charge Carrier and Spin Coherence Lifetime in Two-Dimensional Layered Perovskite Single Crystals

In this paper, we report the charge carrier recombination rate and spin coherence lifetimes in single crystals of two-dimensional (2D) Ruddlesden–Popper perovskites PEA 2 PbI 4 ·(MAPbI 3 ) n-1 (PEA, phenethylammonium; MA, methylammonium; n = 1, 2, 3, 4). Layer thickness-dependent charge carrier recombination rates are observed, with the fastest rates for n = 1 because of the large exciton binding energy, and the slowest rates are observed for n = 2. Room-temperature spin coherence times also show a nonmonotonic layer thickness dependence with an increasing spin coherence lifetime with increasing layer thickness from n = 1 to n = 4, followed by a decrease in lifetime from n = 4 to ∞. The longest coherence lifetime of ~7 ps is observed in the n = 4 sample. Our results are consistent with two contributions: Rashba splitting increases the spin coherence lifetime going from the n = ∞ to the layered systems, while phonon scattering, which increases for smaller layers, decreases the spin coherence lifetime. Finally, the interplay between these two factors contributes to the layer thickness dependence.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Towards Understanding of Cracking during Drying of Thick Aqueous-Processed LiNi 0.8 Mn 0.1 Co 0.1 O 2 Cathodes

Replacing N-methyl-2-pyrrolidone (NMP) with water for processing of lithium-ion battery (LIB) electrodes has both cost and environmental benefits, which include reduced drying time, lower dryer capital cost, elimination of NMP recovery capital equipment, and no release of volatile organic compounds (VOCs) into the environment. However, aqueous-processed thick cathodes (≳4 mAh/cm 2 ) typically exhibit detrimental cracking during drying that is not observed for the NMP-based counterpart. The reasons for cracking of these water-based thick electrodes are still not well understood due to the complex nature of the colloidal dispersions used in the LIB electrode processing steps. In this work, the contributions of various factors responsible for cracking are discussed. We show that eliminating hydrogen evolution due to corrosion of the aluminum current collector eliminated the majority of the cracks regardless of the coating thickness, identifying the gas evolution as the primary reason for electrode cracking. Some secondary cracks and pinhole-type defects remained after addressing the aluminum current collector corrosion, which are thought to be caused by an inferior binding network formed by carbon black and binder in aqueous-processed cathodes compared to those processed with NMP. The thick aqueous processed cathodes are not able to sufficiently withstand the drying stresses without crack formation. We demonstrate reduction of these secondary defects by either improving the binding network or by reducing the drying stress. The former was achieved by replacing carbon black with vapor grown graphite tubes (VGGTs) that caused a more efficient utilization of the emulsion binder. Here, the latter was achieved by adding a small amount of IPA as a co-solvent that has been shown to reduce capillary stresses.

25 ENERGY STORAGE↗

Controlling Dielectric and Relaxor-Ferroelectric Properties for Energy Storage by Tuning Pb 0.92 La 0.08 Zr 0.52 Ti 0.48 O 3 Film Thickness

The energy storage properties of Pb 0.92 La 0.08 Zr 0.52 Ti 0.48 O 3 (PLZT) films grown via pulsed laser deposition were evaluated at variable film thickness of 125, 250, 500, and 1000 nm. These films show high dielectric permittivity up to ~1200. Cyclic I–V measurements were used to evaluate the dielectric properties of these thin films, which not only provide the total electric displacement, but also separate contributions from each of the relevant components including electric conductivity (D1), dielectric capacitance (D2), and relaxor-ferroelectric domain switching polarization (P). Our results show that, as the film thickness increases, the material transits from a linear dielectric to nonlinear relaxor-ferroelectric. And while the energy storage per volume increases with the film thickness, the energy storage efficiency drops from ~80% to ~30%. The PLZT films can be optimized for different energy storage applications by tuning the film thickness to optimize between the linear and nonlinear dielectric properties and energy storage efficiency.

36 MATERIALS SCIENCE↗

Axion insulator state in hundred-nanometer-thick magnetic topological insulator sandwich heterostructures

Abstract An axion insulator is a three-dimensional (3D) topological insulator (TI), in which the bulk maintains the time-reversal symmetry or inversion symmetry but the surface states are gapped by surface magnetization. The axion insulator state has been observed in molecular beam epitaxy (MBE)-grown magnetically doped TI sandwiches and exfoliated intrinsic magnetic TI MnBi 2 Te 4 flakes with an even number layer. All these samples have a thickness of ~ 10 nm, near the 2D-to-3D boundary. The coupling between the top and bottom surface states in thin samples may hinder the observation of quantized topological magnetoelectric response. Here, we employ MBE to synthesize magnetic TI sandwich heterostructures and find that the axion insulator state persists in a 3D sample with a thickness of ~ 106 nm. Our transport results show that the axion insulator state starts to emerge when the thickness of the middle undoped TI layer is greater than ~ 3 nm. The 3D hundred-nanometer-thick axion insulator provides a promising platform for the exploration of the topological magnetoelectric effect and other emergent magnetic topological states, such as the high-order TI phase.

36 MATERIALS SCIENCE↗

Over 15 MA/cm2 of critical current density in 4.8 µm thick, Zr-doped (Gd,Y)Ba2Cu3Ox superconductor at 30 K, 3T

An Advanced MOCVD (A-MOCVD) reactor was used to deposit 4.8µm thick (Gd,Y)BaCuO tapes with 15mol% Zr addition in a single pass. A record-high critical current density (Jc) of 15.11MA/cm2 has been measured over a bridge at 30K, 3T, corresponding to an equivalent (Ic) value of 8705A/12mm width. This corresponds to a lift factor in critical current of ~11 which is the highest ever reported to the best of author’s knowledge. The measured critical current densities at 3T (B||c) and 30, 40 and 50K, respectively, are 15.11, 9.70 and 6.26 MA/cm2, corresponding to equivalent Ic values of 8705, 5586 and 3606A/12mm and engineering current densities (Je) of 7068, 4535 and 2928A/mm2. The engineering current density (Je) at 40K, 3T is 7 times higher than that of the commercial HTS tapes available with 7.5mol% Zr addition. Such record-high performance in thick flms (>1µm) is a clear demonstration that growing thick REBCO flms with high critical current density (Jc) is possible, contrary to the usual fndings of strong Jc degradation with flm thickness. This achievement was possible due to a combination of strong temperature control and uniform laminar fow achieved in the A-MOCVD system, coupled with optimization of BaZrO3 nanorod growth parameters.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Stragglers of the thick disc

Young alpha-rich (YAR) stars have been detected in the past as outliers to the local age - [α/Fe] relation. These objects are enhanced in α-elements, but they are apparently younger than typical thick disc stars. Here, we study the global kinematics and chemical properties of YAR giant stars in the APOGEE DR17 survey and show that they have properties similar to those of the standard thick disc stellar population. This leads us to conclude that YAR are rejuvenated thick disc objects, and the most likely explanation is that they are evolved blue stragglers. This is confirmed by their position in the Hertzsprung–Russel diagram (HRD). Extending our selection to dwarfs allowed us to obtain the first general straggler distribution in an HRD of field stars. We also compared the elemental abundances of our sample with those of standard thick disc stars and found that our YAR stars are shifted in oxygen, magnesium, sodium, and the slow neutron-capture element cerium. Although we detected no sign of binarity for most objects, the enhancement in cerium may be a signature of a mass transfer from an asymptotic giant branch companion. The most massive YAR stars suggest that mass transfer from an evolved star may not be the only plausible formation pathway and that other scenarios, such as collision or coalescence, should be considered.

79 ASTRONOMY AND ASTROPHYSICS↗

Effect of different thickness crystalline SiC buffer layers on the ordering of MgB{sub 2} films probed by extended x-ray absorption fine structure

Extended X-ray absorption fine structure (EXAFS) spectroscopy is a powerful method to investigate the local structure of thin films. Here, we have studied EXAFS of MgB{sub 2} films grown on SiC buffer layers. Crystalline SiC buffer layers with different thickness of 70, 100, and 130 nm were deposited on the Al{sub 2}O{sub 3} (0001) substrates by using a pulsed laser deposition method, and then MgB{sub 2} films were grown on the SiC buffer layer by using a hybrid physical-chemical vapor deposition technique. Transition temperature of MgB{sub 2} film decreased with increasing thickness of SiC buffer layer. However, the T{sub c} dropping went no farther than 100 nm-thick-SiC. This uncommon behavior of transition temperature is likely to be created from electron-phonon interaction in MgB{sub 2} films, which is believed to be related to the ordering of MgB{sub 2} atomic bonds, especially in the ordering of Mg–Mg bonds. Analysis from Mg K-edge EXAFS measurements showed interesting ordering behavior of MgB{sub 2} films. It is noticeable that the ordering of Mg–B bonds is found to decrease monotonically with the increase in SiC thickness of the MgB{sub 2} films, while the opposite happens with the ordering in Mg–Mg bonds. Based on these results, crystalline SiC buffer layers in MgB{sub 2} films seemingly have evident effects on the alteration of the local structure of the MgB{sub 2} film.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Influence of magnetic electrodes thicknesses on the transport properties of magnetic tunnel junctions with perpendicular anisotropy

The influence of the bottom and top magnetic electrodes thicknesses on both perpendicular anisotropy and transport properties is studied in (Co/Pt)/Ta/CoFeB/MgO/FeCoB/Ta magnetic tunnel junctions. By carefully investigating the relative magnetic moment of the two electrodes as a function of their thicknesses, we identify and quantify the presence of magnetically dead layers, likely localized at the interfaces with Ta, that is, 0.33 nm for the bottom electrode and 0.60 nm for the top one. Critical thicknesses (spin-reorientation transitions) are determined as 1.60 and 1.65 nm for bottom and top electrodes, respectively. The tunnel magnetoresistance ratio reaches its maximum value, as soon as both effective (corrected from dead layer) electrode thicknesses exceed 0.6 nm.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Thickness dependence of the charge-density-wave transition temperature in VSe{sub 2}

A set of three-dimensional charge-density-wave (3D CDW) VSe{sub 2} nano-flakes with different thicknesses were obtained by the scotch tape-based micro-mechanical exfoliation method. Resistivity measurements showed that the 3D CDW transition temperature T{sub p} decreases systematically from 105 K in bulk to 81.8 K in the 11.6 nm thick flake. The Hall resistivity ρ{sub xy} of all the flakes showed a linear dependent behavior against the magnetic field with a residual electron concentration of the order of ∼10{sup 21} cm{sup −3} at 5 K. The electron concentration n increases slightly as the thickness d decreases, possibly due to the CDW gap is reduced with the decrease of the thickness.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Quasi-Rayleigh waves in butt-welded thick steel plate

This paper discusses theoretical and experimental analyses of weld guided surface acoustic waves (SAW) through the guided wave propagation (GWP) analyses. The GWP analyses have been carried out by utilizing piezoelectric wafer active sensors (PWAS) for in situ structural inspection of a thick steel plate with butt weld as the weld bead is ground flush. Ultrasonic techniques are commonly used for validation of welded structures in many in-situ monitoring applications, e.g. in off-shore structures, in nuclear and pressure vessel industries and in a range of naval applications. PWAS is recently employed in such ultrasonic applications as a resonator as well as a transducer. Quasi-Rayleigh waves a.k.a. SAW can be generated in relatively thick isotropic elastic plate having the same phase velocity as Rayleigh waves whereas Rayleigh waves are a high frequency approximation of the first symmetric (S0) and anti-symmetric (A0) Lamb wave modes. As the frequency becomes very high the S0 and the A0 wave speeds coalesce, and both have the same value. This value is exactly the Rayleigh wave speed and becomes constant along the frequency i.e. Rayleigh waves are non-dispersive guided surface acoustic waves. The study is followed with weld-GWP tests through the pitch-catch method along the butt weld line. The tuning curves of quasi-Rayleigh wave are determined to show the tuning and trapping effect of the weld bead that has higher thickness than the adjacent plates on producing a dominant quasi-Rayleigh wave mode. The significant usage of the weld tuned and guided quasi-Rayleigh wave mode is essentially discussed for the applications in the in-situ inspection of relatively thick structures with butt weld such as naval offshore structures. The paper ends with summary, conclusions and suggestions for future work.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Effect of strain and thickness on the transition temperature of epitaxial FeRh thin-films

The separate effects of strain and film thickness on the antiferromagnetic-to-ferromagnetic phase transition temperature of FeRh thin films by both experiment and density functional calculations were determined. Strain was introduced by epitaxial growth onto MgO, SrTiO 3 , and KTaO 3 substrates. Film thicknesses below 15 nm substantially suppress the transition temperature, T, to below room temperature in unstrained films. For strained films, tensile/compressive strain decreases/increases T, respectively. KTaO 3 (001) substrates produce sufficient compressive strain to increase the transition temperature of 10 nm FeRh films above room temperature, which is useful for many proposed applications previously limited by the stabilization of the ferromagnetic state at small thicknesses. These results demonstrate that a judicious use of film thickness and substrate can be used to manipulate FeRh's transition temperature over a ~200 K range.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Insights into the magnetic dead layer in La 0.7 Sr 0.3 MnO 3 thin films from temperature, magnetic field and thickness dependence of their magnetization

Experimental investigations of the magnetic dead layer in 7.6 nm thick film of La 0.7 Sr 0.3 MnO 3 (LSMO) are reported. The dc magnetization ( M ) measurements for a sample cooled to T = 5 K in applied field H = 0 reveal the presence of negative remanent magnetization (NRM) in the M vs. H (magnetic field) measurements as well as in the M vs. T measurements in H = 50 Oe and 100 Oe. The M vs. T data in ZFC (zero-field-cooled) and FC (field-cooled) protocols are used to determine the blocking temperature T B in different H . Isothermal hysteresis loops at different T are used to determine the temperature dependence of saturation magnetization ( M S ), remanence (MR) and coercivity HC. The M S vs. T data are fit to the Bloch law, M S ( T ) = M 0 ( 1 – BT 3/2 ), showing a good fit for T < 100 K and yielding the nearest-neighbor exchange constant J/k B ≅ 18 K. The variations of T B vs. H and H C vs. T are well described by the model often used for randomly oriented magnetic nanoparticles with magnetic domain diameter ≈ 9 nm present in the dead-layer of thickness d =1.4 nm. Finally, the data available from literature on the thickness ( D ) variation of Curie temperature ( T C ) and M S of LSMO films grown under 200, 150, and 0.38 mTorr pressures of O 2 are analyzed in terms of the finite-size scaling, with M S vs. D data fit to M S ( D ) = M S (b)(1-d / D ) yielding the dead layer thickness d = 1.1 nm, 1.4 nm and 2.4 nm respectively. Brief discussion on the significance of these results is presented.

36 MATERIALS SCIENCE↗