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At least 451 records · Page 25

Advanced Gas Turbine (AGT) technology development

A 74.5 kW (100 hp) automotive gas turbine was evaluated. The engine structure, bearings, oil system, and electronics were demonstrated and no shaft dynamics or other vibration problem were encountered. Areas identified during the five tests are the scroll retention features, and transient thermal deflection of turbine backplates. Modifications were designed. Seroll retention is addressed by modifying the seal arrangement in front of the gasifier turbine assembly, which will increase the pressure load on the scroll in the forward direction and thereby increase the retention forces. the backplate thermal deflection is addressed by geometric changes and thermal insulation to reduce heat input. Combustor rig proof testing of two ceramic combustor assemblies was completed. The combustor was modified to incorporate slots and reduce sharp edges, which should reduce thermal stresses. The development work focused on techniques to sinter these barrier materials onto the ceramic rotors with successes for both material systems. Silicon carbide structural parts, including engine configuration gasifier rotors (ECRs), preliminary gasifier scroll parts, and gasifier and power turbine vanes are fabricated.

Source record↗

NASA Tech Briefs, February 2012

This issue contains the following briefs: (1) Optical Comb from a Whispering Gallery Mode Resonator for Spectroscopy and Astronomy Instruments Calibration (2) Real-Time Flight Envelope Monitoring System (3) Nemesis Autonomous Test System (4) Mirror Metrology Using Nano-Probe Supports (5) Automated Lab-on-a-Chip Electrophoresis System (6) Techniques for Down-Sampling a Measured Surface Height Map for Model Validation (7) Multi-Component, Multi-Point Interferometric Rayleigh/Mie Doppler Velocimeter (8) Frequency to Voltage Converter Analog Front-End Prototype (9) Dust-Tolerant Intelligent Electrical Connection System (10) Gigabit Ethernet Asynchronous Clock Compensation FIFO (11) High-Speed, Multi-Channel Serial ADC LVDS Interface for Xilinx Virtex-5 FPGA (12) Glovebox for GeoLab Subsystem in HDU1-PEM (13) Modified Process Reduces Porosity when Soldering in Reduced Gravity Environments (14) Use of Functionalized Carbon Nanotubes for Covalent Attachment of Nanotubes to Silicon (15) Flexible Plug Repair for Shuttle Wing Leading Edge (16) Three Dimensionally Interlinked, Dense, Solid Form of Single-Walled CNT Ropes (17) Axel Robotic Platform for Crater and Extreme Terrain Exploration (18) Site Tamper and Material Plow Tool - STAMP (19) Magnetic Interface for Segmented Mirror Assembly (20) Transpiration-Cooled Spacecraft-Insulation-Repair Fasteners (21) Fluorescence-Based Sensor for Monitoring Activation of Lunar Dust (22) Aperture Ion Source (23) Virtual Ultrasound Guidance for Inexperienced Operators (24) Model-Based Fault Diagnosis: Performing Root Cause and Impact Analyses in Real Time (25) Interactive Schematic Integration Within the Propellant System Modeling Environment (26) Magnetic and Electric Field Polarizations of Oblique Magnetospheric Chorus Waves (27) Variable Sampling Mapping.

Source record↗

Contamination character of materials in space technology testing.

Determination of the nature and degree of contamination of mirrors in a vacuum environment in the presence of UV irradiation by outgases from some materials that are candidates for use inside spacecraft and simulated spacecraft environments. A vacuum apparatus was developed for testing contamination of mirrors. Offgases from heated test materials are deposited on a refrigerated mirror, half of which is UV irradiated. Reflectance is measured between 1100 and 25,000 A. Thermofit RNF-100, insulated wire TRT-24-19-V-93, and Eccofoam FS and FPH gave heavier deposits on the nonirradiated mirror. Moxness MS60 SO8, Scotch Tape Y-9050, RTV-577, RTV-41, Stycast 1090, and Epon 934 and 828 gave heavier deposits on the irradiated mirror. Raychem wire 44/0411, polyimide tape X1156, Insulgrease G-640, High Vacuum Silicone Grease, and RTV-602 gave only slight deposits on the irradiated and nonirradiated areas of the mirror.

Coulson, D. M.↗

Polyimide foam for the thermal insulation and fire protection

The preparation of chemically resistant and flame retardant foams from polyfunctional aromatic carboxylic acid derivatives and organic polyisocyanates is outlined. It was found that polyimide foams of reproducible density above 1 lb./ft. and below 6 lbs./cu ft. can be obtained by employing in the reaction of least 2% by weight of siloxane-glycol copolymer as a surfactant which acts as a specific density control agent. Polyimide foams into which reinforcing fibers such as silicon dioxide and carbon fibers may be incorporated were also produced.

Rosser, R. W.↗

Partial Analysis of Insta-Foam

Insta-Foam, used as a thermal insulator for the non-critical area of the external tank during the prelaunch phase to minimize icing, is a two-component system. Component A has polyisocyanates, blowing agents, and stabilizers; Component B has the polyols, catalysts, blowing agents, stabilizers and fire retardant. The blowing agents are Freon 11 and Freon 12, the stabilizers are silicone surfactants, the catalysts are tertiary amines, and the fire retardant is tri-(beta-chloro-isopropyl) phosphate (PCF). High performance liquid chromatography (HPLC) was quantitatively identified polyols and PFC.

Chou, L. W.↗

Thermal Switch for Satellite Temperature Control

An active radiator tile (ART) thermal valve has been fabricated using silicon micromachining. Intended for orbital satellite heat control applications, the operational principal of the ART is to control heat flow between two thermally isolated surfaces by bring the surfaces into intimate mechanical contact using electrostatic actuation. Prototype devices have been tested in a vacuum and demonstrate thermal actuation voltages as low as 40 volts, very good thermal insulation in the OFF state, and a large increase in radiative heat flow in the ON state. Thin, anodized aluminum was developed as a coating for high infrared emissivity and high solar reflectance.

Ziad, H.↗

Design and Fabrication of Electrostatically Actuated Silicon Microshutters Arrays

We have developed a new fabrication process to actuate microshutter arrays (MSA) electrostatically at NASA Goddard Space Flight Center. The microshutters are fabricated on silicon with thin silicon nitride membranes. A pixel size of each microshutter is 100 x 200 micrometers 2. The microshutters rotate 90 degrees on torsion bars. The selected microshutters are actuated, held, and addressed electrostatically by applying voltages on the electrodes the front and back sides of the microshutters. The atomic layer deposition (ALD) of aluminum oxide was used to insulate electrodes on the back side of walls; the insulation can withstand over 100 V. The ALD aluminum oxide is dry etched, and then the microshutters are released in vapor HF.

microshutter arrays↗

Development of advanced material composites for use as internal insulation for LH2 tanks (gas layer concept)

A program is described that was conducted to develop an internal insulation system for potential application to the liquid hydrogen tanks of a reusable booster, where the tanks would be subjected to repeated high temperatures. The design of the internal insulation is based on a unique gas layer concept, in which capillary or surface tension effects are used to maintain a stable gas layer, within a cellular core structure, between the tank wall and the contained liquid hydrogen. Specific objectives were to select materials for insulation systems that would be compatible with wall temperatures of 350 F and 650 F during reentry into the earth's atmosphere, and to fabricate and test insulation systems under conditions simulating the operating environment. A materials test program was conducted to evaluate the properties of candidate materials at elevated temperatures and at the temperature of liquid hydrogen, and to determine the compatibility of the materials with a hydrogen atmosphere at the appropriate elevated temperature. The materials that were finally selected included Kapton polyimide films, silicone adhesives, fiber glass batting, and in the case of the 350 F system, Teflon film.

Gille, J. P.↗

Bandgap narrowing in moderately to heavily doped silicon

A theoretical model of bandgap narrowing in silicon at high doping levels has been developed. The model takes into account the electrostatic energy of interaction between a minority carrier and the majority carriers surrounding it, which reduces the thermal energy necessary for creation of an electron-hole pair. A pair energy similar to the excitonic binding energy of bound electron-hole pairs in insulators is obtained. Theoretical results are in excellent agreement with experimental results in the doping range from 3 times 10 to the 17th to 1.5 times 10 to the 20th/cu cm at room temperature. These results indicate that at high injection levels such as a transistor biased into the conductivity-modulation regime or a solar cell whose surface is established by ion implantation into an oxide layer, the bandgap narrowing is determined by the injected carrier concentration rather than by the doping level.

Lanyon, H. P. D.↗

Studies of Large-Area Inversion-Layer Metal-Insulator-Semiconductor (IL/MIS) Solar Cells and Arrays

Many inversion-layer metal-insulator-semiconductor (IL/MIS) solar cells have been fabricated. There are around eighteen 1 cm(exp 2) IL/MIS solar cells which have efficiencies greater than 7%. There are only about three 19 cm(exp 2) IL/MIS cells which have efficiencies greater than 4%. The more accurate control of the thickness of the thin layer of oxide between aluminum and silicon of the MIS contacts has been achieved. A lot of effort and progress have been made in this area. A comprehensive model for MIS contacts under dark conditions has been developed that covers a wide range of parameters. It has been applied to MIS solar cells. One of the main advantages of these models is the prediction of the range of the thin oxide thickness versus the maximum efficiencies of the MIS solar cells. This is particularly important when the thickness is increased to 25 A. This study is very useful for our investigation of the IL/MIS solar cells. The two-dimensional numerical model for the IL/MIS solar cells has been tried to develop and the results are presented in this report.

Ho, Fat Duen↗

Electronic band gaps from quantum Monte Carlo methods

We develop a method for calculating the fundamental electronic gap of semiconductors and insulators using grand canonical quantum Monte Carlo simulations. Further, we discuss the origin of the bias introduced by supercell calculations of finite size and show how to correct the leading and subleading finite size errors either based on observables accessible in the finite-sized simulations or from density-functional theory calculations. Our procedure is applied to carbon, silicon, and molecular hydrogen crystals, and compared to experiment for carbon and silicon.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

LDEF's contribution to the selection of thermal control coatings for the Space Station

The design of the Space Station presented new challenges in the selection and qualification of thermal control materials that would survive in low Earth orbit for a duration of up to 30 years. Prior to LDEF, flight data were obtained from Orbiting Solar Observatory (OSO) satellites, a number of Orbiter flights, and limited ground tests. The excellent data obtained from the OSO satellites were based on calorimetry and temperature measurements which were transmitted to Earth; these satellites were not recovered. For some of these flight experiments it was difficult to distinguish between changes due to contamination, atomic oxygen (AO), ultraviolet radiation (UV), particle radiation and the synergistic effects between them. The data from Shuttle flights were primarily focused on developing a better understanding of atomic oxygen (AO) effects. Although UV and AO were present, the relatively short duration of the Orbiter flights, about one week, was viewed as too short to show the effects from UV or possible synergistic interactions with AO and contamination. At the beginning of the program in 1989 there was no established design data base for AO resistant thermal control coatings for the Space Station. Then came the Long Duration Exposure Facility (LDEF). It provided the first long life data for materials exposed and recovered from space with a characterized environment. Post flight analysis proved data on the effects of contamination on optical properties in the ram (velocity) and wake directions and the erosion of Teflon and multilayer insulation (MLI) covers. The results from LDEF confirmed and, in some cases, modified the approach used for the Space Station, as well as helped to focus our development activities. These development activities resulted in a number of new technical solutions which are applicable to many spacecraft surfaces and missions. LDEF also showed the detrimental effects that could occur from silicone contamination, an issue that has not been completely resolved. An investigation was initiated in 1993 on the effects of silicone contamination and was continuing at the time this paper was prepared.

Babel, Henry W.↗

Interfacial defect reduction enhances universal power law response in Mo–SiNx granular metals

Granular metals (GMs), consisting of metal nanoparticles separated by an insulating matrix, frequently serve as a platform for fundamental electron transport studies. However, few technologically mature devices incorporating GMs have been realized, in large part because intrinsic defects (e.g., electron trapping sites and metal/insulator interfacial defects) frequently impede electron transport, particularly in GMs that do not contain noble metals. Here, we demonstrate that such defects can be minimized in molybdenum–silicon nitride (Mo–SiN x ) GMs via optimization of the sputter deposition atmosphere. For Mo–SiN x GMs deposited in a mixed Ar/N 2 environment, x-ray photoemission spectroscopy shows a 40%–60% reduction of interfacial Mo-silicide defects compared to Mo–SiN x GMs sputtered in a pure Ar environment. Electron transport measurements confirm the reduced defect density; the dc conductivity improved (decreased) by 10 4 –10 5 and the activation energy for variable-range hopping increased 10×. Since GMs are disordered materials, the GM nanostructure should, theoretically, support a universal power law (UPL) response; in practice, that response is generally overwhelmed by resistive (defective) transport. Here, the defect-minimized Mo–SiN x GMs display a superlinear UPL response, which we quantify as the ratio of the conductivity at 1 MHz to that at dc, Δσ ω ⁠. Remarkably, these GMs display a Δσ ω up to 10 7 , a three-orders-of-magnitude improved response than previously reported for GMs. By enabling high-performance electric transport with a non-noble metal GM, this work represents an important step toward both new fundamental UPL research and scalable, mature GM device applications.

36 MATERIALS SCIENCE↗

A Novel Voltage Balancing Control With dv/dt Reduction for 10-kV SiC MOSFET-Based Medium Voltage Modular Multilevel Converter

Using high voltage (HV) silicon carbide (SiC) power semiconductors in a modular multilevel converter (MMC) is promising because it results in fewer submodules and lower switching loss compared to conventional Si based solutions. The nearest level pulsewidth modulation (NL-PWM) is commonly used in the MMC for medium voltage applications. However, with the NL-PWM and existing voltage balancing control, there are many submodules that switch their modes in a control cycle, resulting in a high dv/dt during the deadtime of the power semiconductor, which could be multiple times of the dv/dt of the single device. This poses great challenges on the noise immunity and insulation design in the MMC using HV SiC devices, which have very fast switching speed. A novel voltage balancing control, which ensures only two submodules switch their modes in a control cycle, is proposed in this article, limiting the maximum dv/dt to the dv/dt of a single power semiconductor and also maintaining the voltage balance performance. Furthermore, the proposed voltage balancing control is experimentally validated in a 10-kV SiC mosfet based MMC with four submodules per arm.

42 ENGINEERING↗

Hardware Design of Medium Voltage SiC-Based Modular Multilevel Converters for Grid-Tied Applications

This paper presents a design of a 10 kV silicon carbide (SiC) MOSFET based modular multilevel converter (MMC). The MMC functions as the interconnection between a 24 kV dc bus and a 13. SkV distribution grid. This paper focuses on the hardware design of the MMC and its submodules. The gate driver, auxiliary power supply and bus bur in submodules are major components that need to meet high dv/dt immunity and high insulation voltage requirements. The gate driver achieves over 200 kV/us common mode transient immunity (CMTI). Its associated auxiliary power supply is based on an on-board transformer with over 30 kV insulation capability and 1.4 pF barrier capacitance. The busbar achieves less than 11 kV/cm electric field in the air to avoid partial discharges. Validation tests of the MMC submodule were performed by double pulse tests at 5 kV and buck converter tests at3 kV, 52A (peak). Reliable operations were achieved in validation tests.

auxiliary power supply↗

A nanoscale photonic thermal transistor for sub-second heat flow switching

Abstract Control of heat flow is critical for thermal logic devices and thermal management and has been explored theoretically. However, experimental progress on active control of heat flow has been limited. Here, we describe a nanoscale radiative thermal transistor that comprises of a hot source and a cold drain (both are ~250 nm-thick silicon nitride membranes), which are analogous to the source and drain electrodes of a transistor. The source and drain are in close proximity to a vanadium oxide (VO x )-based planar gate electrode, whose dielectric properties can be adjusted by changing its temperature. We demonstrate that when the gate is located close ( < ~1 µm) to the source-drain device and undergoes a metal-insulator transition, the radiative heat transfer between the source and drain can be changed by a factor of three. More importantly, our nanomembrane-based thermal transistor features fast switching times ( ~ 500 ms as opposed to minutes for past three-terminal thermal transistors) due to its small thermal mass. Our experiments are supported by detailed calculations that highlight the mechanism of thermal modulation. We anticipate that the advances reported here will open new opportunities for designing thermal circuits or thermal logic devices for advanced thermal management.

42 ENGINEERING↗

Assessing corrosion problems in photovoltaic cells via electrochemical stress testing

A series of accelerated electrochemical experiments to study the degradation properties of polyvinylbutyral-encapsulated silicon solar cells has been carried out. The cells' electrical performance with silk screen-silver and nickel-solder contacts was evaluated. The degradation mechanism was shown to be electrochemical corrosion of the cell contacts; metallization elements migrate into the encapsulating material, which acts as an ionic conducting medium. The corrosion products form a conductive path which results in a gradual loss of the insulation characteristics of the encapsulant. The precipitation of corrosion products in the encapsulant also contributes to its discoloration which in turn leads to a reduction in its transparency and the consequent optical loss. Delamination of the encapsulating layers could be attributed to electrochemical gas evolution reactions. The usefulness of the testing technique in qualitatively establishing a reliability difference between metallizations and antireflection coating types is demonstrated.

Shalaby, H.↗