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At least 451 records · Page 25
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

In situ tuning of optomechanical crystals with nano-oxidation

Optomechanical crystals are a promising device platform for quantum transduction and sensing. Precise targeting of the optical and acoustic resonance frequencies of these devices is crucial for future advances on these fronts. However, fabrication disorder in these wavelength-scale nanoscale devices typically leads to inhomogeneous resonance frequencies. Here we achieve in situ , selective frequency tuning of optical and acoustic resonances in silicon optomechanical crystals via electric field-induced nano-oxidation using an atomic-force microscope. Our method can achieve a tuning range >2nm (0.13%) for the optical resonance wavelength in the telecom C-band, and >60MHz (1.2%) for the acoustic resonance frequency at 5 GHz. The tuning resolution of 1.1 pm for the optical wavelength and 150 kHz for the acoustic frequency allows us to spectrally align multiple optomechanical crystal resonators using a pattern generation algorithm. Our results establish a method for precise post-fabrication tuning of optomechanical crystals. This technique can enable coupled optomechanical resonator arrays, scalable resonant optomechanical circuits, and frequency matching of microwave-optical quantum transducers.

Hatipoglu, Utku (ORCID:0000000205119196)↗
NASA NTRS1986

Analytical and numerical studies of the thermocapillary flow in a uniformly floating zone

The microgravity environment of an orbiting vehicle permits crystal growth experiments in the presence of greatly reduced buoyant convection in the liquid melt. Crystals grown in ground-based laboratories do not achieve their potential properties because of dopant variations caused by flow in the melt. The floating zone crystal growing system is widely used to produce crystals of silicon and other materials. However, in this system the temperature gradient on the free sidewall surface of the melt is the source of a thermocapillary flow which does not disappear in the low-gravity environment. The idea of using a uniform rotation of the floating zone system to confine the thermocapillary flow to the melt sidewall leaving the interior of the melt passive is examined. A cylinder of fluid with an axial temperature gradient imposed on the cylindrical sidewall is considered. A half zone and the linearized, axisymmetric flow in the absence of crystal growth is examined. Rotation is found to confine the linear thermocapillary flow. A simplified model is extended to a full zone and both linear and nonlinear thermocapillary flows are studied theoretically. Analytical and numerical methods are used for the linear flows and numerical methods for the nonlinear flows. It was found that the linear flows in the full zone have more complicated and thicker boundary layer structures than in the half zone, and that these flows are also confined by the rotation. However, for the simplified model considered and for realistic values for silicon, the thermocapillary flow is not linear. The fully nonlinear flow is strong and unsteady (a weak oscillation is present) and it penetrates the interior. Some non-rotating flow results are also presented. Since silicon as a large value of thermal conductivity, one would expect the temperature fields to be determined by conduction alone. This is true for the linear and weakly nonlinear flows, but for the stronger nonlinear flow the results show that temperature advection is also important. Uniform rotation may still be a means of confining the flow and the results obtained define the procedure to be used to examine this hypothesis.

Fowlis, W. W.↗
DOE OSTI2021

Test beam characterization of sensor prototypes for the CMS Barrel MIP Timing Detector

The MIP Timing Detector will provide additional timing capabilities for detection of minimum ionizing particles (MIPs) at CMS during the High Luminosity LHC era, improving event reconstruction and pileup rejection. The central portion of the detector, the Barrel Timing Layer (BTL), will be instrumented with LYSO:Ce crystals and Silicon Photomultipliers (SiPMs) providing a time resolution of about 30 ps at the beginning of operation, and degrading to 50-60 ps at the end of the detector lifetime as a result of radiation damage. In this work, we present the results obtained using a 120 GeV proton beam at the Fermilab Test Beam Facility to measure the time resolution of unirradiated sensors. A proof-of-concept of the sensor layout proposed for the barrel region of the MTD, consisting of elongated crystal bars with dimensions of about 3×3×57 mm3 and with double-ended SiPM readout, is demonstrated. This design provides a robust time measurement independent of the impact point of the MIP along the crystal bar. We tested LYSO:Ce bars of different thickness (2, 3, 4 mm) with a geometry close to the reference design and coupled to SiPMs manufactured by Hamamatsu and Fondazione Bruno Kessler. The various aspects influencing the timing performance such as the crystal thickness, properties of the SiPMs (e.g. photon detection efficiency), and impact angle of the MIP are studied. A time resolution of about 28 ps is measured for MIPs crossing a 3 mm thick crystal bar, corresponding to a most probable value (MPV) of energy deposition of 2.6 MeV, and of 22 ps for the 4.2 MeV MPV energy deposition expected in the BTL, matching the detector performance target for unirradiated devices.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2025

Laser-Induced Spectral Diffusion of T Centers in Silicon Nanophotonic Devices

Color centers in silicon are emerging as spin-photon interfaces operating at telecommunication wavelengths. The nanophotonic device integration of silicon color centers via ion implantation leads to significant optical-linewidth broadening, which makes indistinguishable photon generation challenging. Here, we study the optical spectral diffusion of T centers in a silicon photonic crystal cavity. We investigate the linewidth-broadening timescales and origins by measuring the temporal correlations of the resonance frequency under different conditions. Spectral hole-burning measurements reveal no spectral broadening at short timescales from 102 ns to 725 ns. We probe broadening at longer timescales using a check pulse to herald the T-center frequency and a probe pulse to measure the frequency after a wait time. The optical resonance frequency is stable up to 3 ms in the dark. Laser pulses below the silicon band gap applied during the wait time lead to linewidth broadening. Our observations establish laser-induced processes as the dominant spectral-diffusion mechanism for T centers in devices and inform materials and feedback strategies for indistinguishable photon generation.

Zhang, Xueyue↗
DOE OSTI2019

Measurement and alleviation of subsurface damage in a thick-crystal neutron interferometer

The construction is described of a monolithic thick-crystal perfect silicon neutron interferometer using an ultra-high-precision grinding technique and a combination of annealing and chemical etching that differs from the construction of prior neutron interferometers. The interferometer is the second to have been annealed after machining and the first to be annealed prior to chemical etching. Monitoring the interference signal at each post-fabrication step provides a measurement of subsurface damage and its alleviation. In this case, the strain caused by subsurface damage manifests itself as a spatially varying angular misalignment between the two relevant volumes of the crystal and is reduced from ~10 -5 rad to ~10 -9 rad by way of annealing and chemical etching.

Chemistry↗
NASA NTRS1998

The Role of Marangoni Convection for the FZ-Growth of Silicon

In growing crystals by the floating zone (FZ) technique under microgravity, the size restriction we have under earth conditions because of the hydrostatic pressure are avoided. Further, buoyancy related convection is eliminated to a high degree. But in the case of silicon, the gravity independent thermocapillary (Marangoni) convection is time-dependent even for small zone geometries. This has been demonstrated in several Technische Experimente unter Schwerelosigkeit (TEXUS) - technical experiments under reduced gravity) flights. Thus, to really take advantage of microgravity with respect to improve crystal quality, tools are required to control Marangoni convection in space facilities. Applying magnetic fields, convection can be influenced; fluid flow can either be damped (static magnetic fields) or overlaid by a regular flow regime (rotating magnetic fields). In floating zones of 8-10mm diameter and height (Ma approximately equals 6 x 10(exp 3)), a static magnetic field of about 2OOmT is sufficient to suppress time-dependent Marangoni convection to a high degree, but in dependence on the kind and the concentration of the added dopant, a new type of strongly pronounced dopant inhomogeneities have been detected. They are originated by thermoelectromagnetic convection. This can be avoided as well as detrimental effects on the radial dopant distribution by using rotating magnetic fields instead of static ones. Applying 75mT/50Hz to the FZ, the intensity of the dopant fluctuations is reduced to a high degree. Considering the rather low power consumption of rotating magnetic fields, this will be a useful tool for control or elimination of time-dependent Marangoni convection under microgravity. The strong time dependent character of thermocapillary flow and its influence on the temperature field has been measured in silicon half-zones for Marangoni numbers of Ma is approximately equal to 1-1.5 x 10(exp 4): temperature fluctuations up to 4C have been determined. Their frequency range was 0.1 and 0.4 Hz. Between certain thermocouple or sensor pairs, strong correlation has been detected.

Dold, P.↗
DOE OSTI2020

Effects of surface undulations on asymmetric X-ray diffraction: a rocking-curve topography study

The results are reported of an X-ray diffraction study of an Si crystal designed and fabricated for very asymmetric diffraction from the 333 reflection for X-ray energies of 8.100 and 8.200 keV. A crystal with an asymmetry angle of 46 ± 0.1° between the surface and the (111) planes was studied. The grazing angles of incidence were near 1.08 and 0.33° for these two energies, respectively. Features arising from surface undulations were not observed at 8.100 keV, but were observed at 8.200 keV. The results at 8.100 keV allow an alternative explanation based on strain near the surface to be ruled out. Topographic images were obtained as a function of rocking angle, and in the case of 8.200 keV the surface morphology is evident. Finally, the results are found to be in agreement with dynamical X-ray diffraction calculations made with the Takagi–Taupin equations specialized to a surface having convex or concave features, as reported in the accompanying paper [Macrander (2020). J. Appl. Cryst. 53 , 793–799].

36 MATERIALS SCIENCE↗
DOE OSTI2019

Implementation and assessment of resolution-dependent elastic incoherent neutron scattering measurements at a backscattering spectrometer for probing relaxations in complex systems

We introduce the use of a higher-order reflection, Si(333), of the silicon analyzer crystals at a backscattering spectrometer to implement analysis of the relaxation dynamics in the samples. Here, this is achieved by monitoring the temperature dependence of the neutron scattering intensity perceived as elastic when measured using Si(111), Si(311), and Si(333) reflections. As a test case, we use a sample with well-characterized, but complex, relaxation pattern, where the non-Lorentzian relaxation function is known to exhibit a set of parameters specific to each temperature point and scattering momentum transfer (Q) value. Even for this very general relaxation pattern, characterized by no constrains on the relaxation function parameters, we successfully map the relaxation times measured using the present approach onto those previously obtained from the full analysis of the quasielastic neutron scattering signal. Analysis of the Q-specific activation energies becomes possible for the Q values accessible simultaneously through Si(111), Si(311), and Si(333) reflections (in the present case, 0.9 Å –1 < Q < 1.9 Å –1 ). While the dedicated neutron spectrometers for this type of analysis are yet to be constructed, we show that the present-day backscattering spectrometers can be employed, under certain conditions, to analyze temperature dependence of the relaxation time in the samples not amenable to traditional full analysis of the quasielastic neutron scattering signal.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

Photoelectric absorption cross section of silicon near the bandgap from room temperature to sub-Kelvin temperature

The use of cryogenic silicon as a detector medium for dark matter searches is gaining popularity. Many of these searches are highly dependent on the value of the photoelectric absorption cross section of silicon at low temperatures, particularly near the silicon bandgap energy, where the searches are most sensitive to low mass dark matter candidates. While such cross section data have been lacking from the literature, previous dark matter search experiments have attempted to estimate this parameter by extrapolating it from higher temperature data. However, discrepancies in the high temperature data have led to order-of-magnitude differences in the extrapolations. In this paper, we resolve these discrepancies by using a novel technique to make a direct, low temperature measurement of the photoelectric absorption cross section of silicon at energies near the bandgap (1.2 eV–2.8 eV).

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2022

Contactless excitation of acoustic resonance in insulating wafers

Contactless excitation and detection of high harmonic acoustic overtones in a thin insulator single crystal are described using radio frequency spectroscopy techniques. Single crystal [001] silicon wafer samples were investigated, one side covered with a Nb thin film, the common starting point for the fabrication of quantum devices. Additionally, the coupling between electromagnetic signals and mechanical oscillation is achieved from the Lorentz force generated by an external magnetic field. This method is suitable for any sample with a metallic surface or covered with a thin metal film. High resolution measurements of the temperature dependence of the sound velocity and elastic constants of silicon are reported and compared with known results.

47 OTHER INSTRUMENTATION↗
DOE OSTI2025

Low energy backgrounds and excess noise in a two-channel low-threshold calorimeter

Here, we describe observations of low energy excess (LEE) events, background events observed in all light dark matter direct detection calorimeters, and noise in a transition edge sensor based two-channel silicon athermal phonon detector with 375 meV baseline energy resolution. We measure two distinct LEE populations: “shared” multichannel events with a pulse shape consistent with substrate athermal phonon events and sub-eV events that couple nearly exclusively to a single channel with a significantly faster pulse shape. These “singles” are consistent with events occurring within the aluminum athermal phonon collection fins. Similarly, our measured detector noise is higher than the theoretical expectation. Measured noise can be split into an uncorrelated component, consistent with shot noise from small energy depositions within the athermal phonon sensor itself, and a correlated component, consistent with shot noise from energy depositions within the silicon substrate's phonon system.

47 OTHER INSTRUMENTATION↗
DOE OSTI2026

Orientation-tunable local crystallization of Si films enabled by atomic imprint crystallization

Here, in this paper, we demonstrate area-selective crystallization of amorphous Si into tunable crystal orientations enabled by atomic imprint crystallization (AIC), where an amorphous Si layer is crystallized by solid phase epitaxy (SPE) from an externally impressed single-crystalline Si template. Using micro-patterned single-crystalline Si templates, a limited area of an amorphous Si film, where the film surface and patterned template surface are in contact, is crystallized via SPE to create an array of crystallographically aligned dots embedded in amorphous matrix. Combining AIC from the top surface and conventional SPE from the substrate, we demonstrate the fabrication of an array of crystalline dots embedded in single-crystalline matrix with tunable in-plane rotation angle. The results indicate the high tunability of the crystallization process enabled by AIC, allowing precise control of crystallographic properties of thin films with area-selectivity; such capability opens opportunities for the design of new materials for a wide range of applications in materials science.

Amorphous↗
NASA NTRS1968

High-temperature-materials study

Chemical vapor deposition of aluminum phosphides onto single crystals of silicon and gallium arsenide for producing high temperature operating solid state electronic devices

Baxter, R. D.↗