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At least 451 records · Page 25
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Continuous and Time-Domain Coherent Signal Conversion between Optical and Microwave Frequencies

A quantum network consisting of computational nodes connected by high-fidelity communication channels could expand information-processing capabilities significantly beyond those of classical networks. Superconducting qubits hold promise for scalable and high-fidelity quantum computation at microwave frequencies but must operate in an isolated cryogenic environment, obviating the potential for practical long-range communication. Quantum communication has, however, been demonstrated with optical photons. A fast efficient quantum-coherent interface between superconducting qubits and optical photons would provide a key resource for a large-scale quantum network or distributed quantum computer. Here, we describe the design and experimental operation of a device incorporating a silicon optomechanical nanobeam combined with an aluminum-nitride-based electromechanical transducer. We experimentally demonstrate classical continuous-wave operation of this device at room temperature with external conversion efficiencies of (2.5 +/- 0.4) x 10 -5 (microwave to optical) and (3.8 +/- 0.4) x 10 -5 (optical to microwave), corresponding to internal efficiencies of 2.4% and 3.7%, respectively. Finally, this device also has a larger bandwidth than previous efficient microwave-optical transducers, allowing us to operate in the time domain with 20-ns pulses.

74 ATOMIC AND MOLECULAR PHYSICS↗
NASA NTRS1992

Eye-safe visible wavelength lidar

Recent technological advances on several fronts offer the possibility for relatively low-cost, eye-safe visible-wavelength lidar systems for autonomous aerosol/environmental monitoring applications. Improved silicon photodiodes and avalanche photodiodes that have become available offer high-quantum-efficiency detection at very low dark counts (10 to 1000 count/s) and can be used in a photon counting mode for signal plus background and dark current photoelectron count rates of megahertz. The essential requirements and features of a possible lidar system that capitalizes on technical advances on several fronts are outlined. A baseline lidar system is suggested for monitoring tropospheric and stratospheric aerosols. Sensitivity to wavelength, background radiation, detector characteristics, and other system parameters is discussed for several simulated data sets.

Cooley, T. W.↗
NASA NTRS2005

Development of Ultra-High Sensivity Silicon Carbide Detectors

A variety of silicon carbide (SiC) detectors have been developed to study the sensitivity of SiC ultraviolet (UV) detectors, including Schottky photodiodes, p-i-n photodiodes, avalanche photodiodes (APDs), and single photon-counting APDs. Due to the very wide bandgap and thus extremely low leakage current, Sic photo-detectors showed excellent sensitivity. The specific detectivity, D*, of SiC photodiodes are orders of magnitude higher than that of their competitors, such as Si photodiodes, and comparable to the D* of photomultiplier tubes (PMTs). To pursue the ultimate detection sensitivity, SiC APDs and single photon-counting avalanche diodes (SPADs) have also been fabricated. By operating the SiC APDs at a linear mode gain over 10(exp 6), SPADs in UV have been demonstrated. SiC UV detectors have great potential for use in solar blind UV detection and biosensing. Moreover, SiC detectors have excellent radiation hardness and high temperature tolerance which makes them ideal for extreme environment applications such as in space or on the surface of the Moon or Mars.

Yan, Feng↗
DOE OSTI2021

Characterization of the DUNE photodetectors and study of the event burst phenomenon

The Deep Underground Neutrino Experiment (DUNE) is an upcoming neutrino physics experiment that will answer some of the most compelling questions in particle physics and cosmology. The DUNE far detectors employ silicon photomultipliers (SiPMs) to detect light produced by charged particles interacting in a large liquid argon time projection chamber (LArTPC). The SiPMs are photosensors consisting of an array of single-photon avalanche diodes (SPAD) operating in Geiger mode. Their high sensitivity and dynamic range, as well as the possibility to fill large surfaces with high-granularity sensors, makes them an ideal choice for DUNE. An international consortium of research groups is currently engaged in a systematic comparison of the performances of the SiPM models that have been custom developed for DUNE by two manufacturers. Such detailed studies, which include gain measurements and a structure study of the dark count rate at 77 K, are meant to determine the best choice of the photodetection system for DUNE, as well as characterize the response of the chosen detectors for the DUNE simulation. Moreover, an investigation of a newly observed phenomenon, in which quick bursts of tens of events at close range are collected in individual SiPMs, is being carried out, which potentially impacts the design of future models and their implementation in particle physics experiments.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS2001

X-Ray Synchrotron Emission From 10-100 TeV Cosmic-Ray Electrons In The Supernova Remnant SN 1006

We present the results of a joint spectral analysis of RXTE PCA, ASCA SIS, and ROSAT PSPC data of the supernova remnant SN 1006. This work represents the first attempt to model both the thermal and nonthermal X-ray emission over the entire X-ray energy band from 0.12 to 17 key. The thermal flux is described by a nonequilibrium ionization model with an electron temperature kTe = 0.6 key, an ionization timescale n(sub 0)t = 9 x 10(exp 9)/cc s, and a relative elemental abundance of silicon that is 10 - 18 times larger than the solar abundance. The nonthermal X-ray spectrum is described by a broken power law model with low- and high-energy photon indices Gamma(sub 1) = 2.1 and Gamma(sub 2) = 3.0, respectively. Since the nonthermal X-ray spectrum steepens with increasing energy, the results of the present analysis corroborate previous claims that the nonthermal X-ray emission is produced by synchrotron radiation. We argue that the magnetic field strength is significantly larger than previous estimates of about 10 micro G and arbitrarily use a value of 40 micro G to estimate the parameters of the cosmic-ray electron, proton, and helium spectra of the remnant. The results for the ratio of the number densities of protons and electrons (R = 160 at 1 GeV), the total energy in cosmic rays (E(sub cr) = 1 x 10(exp 50) ergs), and the spectral index of the electrons at 1 GeV (Gamma(sub e) = 2.14 +/- 0.12) are consistent with the hypothesis that Galactic cosmic rays are accelerated predominantly in the shocks of supernova remnants. Yet, the remnant may or may not accelerate nuclei to energies as high as the energy of the "knee," depending on the reason why the maximum energy of the electrons is only 10 TeV.

Allen, G. E.↗
DOE OSTI2020

A cantilevered liquid-nitrogen-cooled silicon mirror for the Advanced Light Source Upgrade

This paper presents a novel cantilevered liquid-nitrogen-cooled silicon mirror design for the first optic in a new soft X-ray beamline that is being developed as part of the Advanced Light Source Upgrade (ALS-U) (Lawrence Berkeley National Laboratory, USA). The beamline is optimized for photon energies between 400 and 1400 eV with full polarization control. Calculations indicate that, without correction, this design will achieve a Strehl ratio greater than 0.85 for the entire energy and polarization ranges of the beamline. With a correction achieved by moving the focus 7.5 mm upstream, the minimum Strehl ratio is 0.99. This design is currently the baseline plan for all new ALS-U insertion device beamlines.

47 OTHER INSTRUMENTATION↗
NASA NTRSDate not supplied

The PCM is Dead! Long Live O-PCM!

The ability to reconfigure the optical behavior of a device enables free-space applications ranging from imaging to sensing and signal control. Such optical devices can be compacted via meta-surfaces, patterned structures with feature sizes below the incident wavelength. Leveraging geometry in addition to material properties and CMOS fabrication techniques has allowed meta-surfaces for lenses, holograms, beam steerers and more. To incorporate multiple optical functions into one device, various methods of device control have been implemented, such as stretching of flexible substrates, tuning the refractive index of the comprising meta-atoms via the electro-optic or the thermo-optic effects, phase transition materials such as VO2 and more. Chalcogenide glasses used as optical phase change materials, such as Ge¬2Sb2Te5 (GST), have gained increased traction in the optics community for potential use in the near infrared (NIR) and mid infrared (MIR) bands, including the telecom bands. Various chalcogenides such as Sb2Se3, Sb2S3, Ge2Sb¬2Se5 and Ge2Sb2Se4Te (GSST) have been investigated due to their broad NIR or MIR transparency window and large changes in refractive index. In their amorphous phase, these materials usually display a lower refractive index and low absorption when compared to their crystalline state which display a higher refractive index and typically larger extinction coefficients. The amorphous-crystalline reversible switching can be done via fast melt-quenching thermal processes triggered by laser or electrical impulses, relying on a substrate as a heat sink. The potential of PCMs in photonic devices can be limited by intrinsic material limitations as well as by device fabrication issues. To explore the cyclability of GSST, a PCM with large refractive index contrast and on-chip electrothermal switching on a silicon-on-insulator platform has been done to analyze potential failure mechanisms from both a material and device perspective. A brief outline of the instrumentation and phase change contrast analysis is provided. Dewetting of the PCM, delamination of and damage in the PECVD SiNx protective layer, elemental migration in the PCM and optical contrast decay have been observed in cycled GSST devices. Guidelines for device performance improvement are proposed, and an improved design with larger endurance is shown in progress.

reconfigurable photonics↗
NASA NTRS2014

HgCdTe e-APD Detector Arrays with Single Photon Sensitivity for Space Lidar Applications

A multi-element HgCdTe electron initiated avalanche photodiode (e-APD) array has been developed for space lidar applications. The detector array was fabricated with 4.3-μm cutoff HgCdTe which covered a spectral response from 0.4 to 4.3 μm. We have characterized a 4x4 detector array with 80 μm square elements and an integrated custom cryogenic silicon read-out integrated circuit (ROIC). The device operated at 77K inside a small closed-cycle Dewar. Measurements showed a unity gain quantum efficiency of about 90% at 1.55 μm. The bulk dark current of the HgCdTe e-APD at 77K was less than 50,000 input referred electrons/s at 12 V APD bias where the APD gain was 620 and the measured noise equivalent power (NEP) was 0.4 fW/Hz1/2. The electrical bandwidth of the ROIC was about 6 MHz, which was chosen to match the laser pulse width of our CO2 lidar. Even with the relatively low bandwidth, the high APD gain and low dark current enabled the device to detect single photon events. Because the APD was biased below the break-down voltage, the detector output was linear with the input optical signal and there was no dead-time and afterpulsing. A new series of HgCdTe e-APDs are being developed with a much wider bandwidth ROIC and higher gain HgCdTe e-APD array, which is expected to give a much better performance in linear mode photon counting applications.

HgCdTe↗
DOE OSTI2021

Performance of Spherical Quantum Well Down Converters in Solid State Lighting

We report the color conversion performance of amber and red emitting quantum dots (QDs) on InGaN solid-state lighting (SSL) light emitting diode (LED) packages. Spherical quantum well (SQW) architectures (CdS/CdSe 1- x S x /CdS) were prepared using a library of thio- and selenourea synthesis reagents and high throughput synthesis robotics. CdS/CdSe 1- x S x QDs with narrow luminescence bands were coated with thick CdS shells (thickness = 1.6-7.5 nm) to achieve photoluminescence quantum yields (PLQY) up to 88% at amber and red emission wavelengths (λ max = 600-642 nm, FWHM < 45 nm). The photoluminescence from SQWs encapsulated in silicone and deposited on LED packages was monitored under accelerated aging conditions (oven temperature = 85 °C, relative humidity = 5-85%, blue optical power density = 3-45 W/cm 2 ) by monitoring the red photon output over several hundred hours of continuous operation. The growth of a ZnS shell on the SQW surface increases the stability under long-term operation but also reduces the PLQY, especially of SQWs with thick CdS shells. The results illustrate that the outer ZnS shell layer is key to optimizing the PLQY and the long-term stability of QDs during operation on SSL packages.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Batch VUV4 characterization for the SBC-LAr10 scintillating bubble chamber

The Scintillating Bubble Chamber (SBC) collaboration purchased 32 Hamamatsu VUV4 silicon photomultipliers (SiPMs) for use in SBC-LAr10, a bubble chamber containing 10 kg of liquid argon. A dark-count characterization technique, which avoids the use of a single-photon source, was used at two temperatures to measure the VUV4 SiPMs breakdown voltage (V BD ), the SiPM gain (g SiPM ), the rate of change of g SiPM with respect to voltage (m), the dark count rate (DCR), and the probability of a correlated avalanche (P CA ) as well as the temperature coefficients of these parameters. A Peltier-based chilled vacuum chamber was developed at Queen's University to cool down the Quads to 233.15 ± 0.2 K and 255.15 ± 0.2 K with average stability of ±20 mK. An analysis framework was developed to estimate V BD to tens of mV precision and DCR close to Poissonian error. The temperature dependence of V BD was found to be 56 ± 2 mV K -1 , and m on average across all Quads was found to be (459 ± 3(stat.)±23(sys.))× 10 3 e- PE -1 V -1 . The average DCR temperature coefficient was estimated to be 0.099 ± 0.008 K -1 corresponding to a reduction factor of 7 for every 20 K drop in temperature. The average temperature dependence of P CA was estimated to be 4000 ± 1000 ppm K -1 . P CA estimated from the average across all SiPMs is a better estimator than the P CA calculated from individual SiPMs, for all of the other parameters, the opposite is true. All the estimated parameters were measured to the precision required for SBC-LAr10, and the Quads will be used in conditions to optimize the signal-to-noise ratio.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2020

3D Hybrid Plasmonic Framework with Au Nanopillars Embedded in Nitride Multilayers Integrated on Si

Integration of nanoscale photonic and plasmonic components on Si substrates is a critical step toward Si-based integrated nanophotonic devices. Herein, a set of unique complex 3D metamaterials with intercalated nanolayered and nanopillar structures with tunable plasmonic and optical properties on Si substrates is designed. More specifically, the 3D metamaterials combine metal (Au) nanopillars and alternating metal-nitride (Au-TiN and Au-TaN) nanolayers, epitaxially grown on Si substrates. The ultrafine Au nanopillars ( d ≈ 3 nm) continuously grow throughout all the nanolayers with high epitaxial quality. Novel optical properties, such as highly anisotropic optical property, high absorbance covering the entire visible spectrum regime, and hyperbolic property in the visible regime, are demonstrated. Furthermore, a waveguide based on a silicon nitride (Si 3 N 4 ) ridge with a multilayer structure is successfully fabricated. The demonstration of 3D nanoscale metamaterial design integrated on Si opens up a new route toward tunable metamaterials nanostructure designs with versatile material selection for various optical components in Si integrated photonics.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Fabrication of ultrathin suspended membranes from atomic layer deposition films

In this report, ultrathin films suspended as freestanding membranes are critical to many microelectronic and materials science applications. However, fabrication methods are currently limited in either their flexibility, due to material selectivity issues during the final membrane release, or their scalability. Here, we demonstrate a novel fabrication process for suspending ultrathin films with thicknesses as low as 4 nm and lateral dimensions up to 20 x 1000 μm from a variety of materials grown by atomic layer deposition. A silicon nitride membrane serves as the support for a sacrificial polymer layer and an ultrathin atomic layer deposition film which, after plasma etching, will form the membrane. The high chemical selectivity between atomic layer deposition-grown transition metal nitrides and oxides and the sacrificial polymer means that ultrathin films of a variety of materials can be released without damage using a single process. Electrically conductive titanium nitride membranes can be produced by this method and are of significant interest for electron microscopy applications. Electron transparency of titanium nitride membranes was found to be ~14% higher than silicon nitride of the same thickness, and of similar conductivity to graphite, meaning that ultrathin, conductive, and electron transparent membranes can be fabricated at scale. These membranes are ideal supports for electron and photon characterization techniques, as well as microelectromechanical system applications that require a conductive membrane.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Surface plasmon-cavity hybrid state and its graphene modulation at THz frequencies

Fabry–Pérot (F–P) cavity and metal hole array are classic photonic devices. Integrating F–P cavity with holey metal typically enhances interfacial reflection and dampens wave transmission. In this work, a hybrid bound surface state is found within rectangular metal holes on a silicon substrate by merging an extraordinary optical transmission (EOT) mode and a high-order F–P cavity mode both spatially and spectrally. Transmission, Q-factor, and bandwidth can be enhanced significantly with respect to the classical EOT and F–P interference by simply sweeping the cavity length. This state can provide EOT properties and ten times broader EOT bandwidth well below the effective plasma frequency of the periodic metal holes, where the metal holes typically show evanescent properties and do not support EOT in theory. Furthermore, a large modulation range of 25 % and 39 % is demonstrated with various graphene patterns for the transmittance of this hybrid state at 500 and 582 GHz, respectively.

36 MATERIALS SCIENCE↗
NASA NTRS1991

Phototransistors For Long-Wavelength Infrared

Phototransistors of proposed new type used to detect photons having wavelengths of 8 to 150 micrometers. Detection based on impurity-to-continuum transitions. Integrated-circuit imaging arrays of such phototransistors useful in infrared remote sensing. Device of this type silicon, germanium, or silicon/germanium phototransistor in which junction between collector and base lightly doped with impurities.

Borenstain, Shmuel I.↗
NASA NTRS1990

Narrow bandgap semiconducting silicides: Intrinsic infrared detectors on a silicon chip

Work done during the final report period is presented. The main technical objective was to achieve epitaxial growth on silicon of two semiconducting silicides, ReSi2 and CrSi2. ReSi2 thin films were grown on (001) silicon wafers by vacuum evaporation of rhenium onto hot substrates in ultrahigh vacuum. The preferred epitaxial relationship was found to be ReSi2(100)/Si(001) with ReSi2(010) parallel to Si(110). The lattice matching consists of a common unit mesh of 120 A(sup 2) area, and a mismatch of 1.8 percent. Transmission electron microscopy revealed the existence of rotation twins corresponding to two distinct but equivalent azimuthal orientations of the common unit mesh. MeV He(+) backscattering spectrometry revealed a minimum channeling yield of 2 percent for an approximately 1,500 A thick film grown at 650 C. Although the lateral dimension of the twins is on the order of 100 A, there is a very high degree of alignment between the ReSi2(100) and the Si(001) planes. Highly oriented films of CrSi2 were grown on (111) silicon substrates, with the matching crystallographic faces being CrSi2(001)/Si(111). The reflection high-energy electron diffraction (RHEED) patterns of the films consist of sharp streaks, symmetrically arranged. The predominant azimuthal orientation of the films was determined to be CrSi2(210) parallel to Si(110). This highly desirable heteroepitaxial relationship has been obtained previously by others; it may be described with a common unit mesh of 51 A(sup 2) and mismatch of 0.3 percent. RHEED also revealed the presence of limited film regions of a competing azimuthal orientation, CrSi2(110) parallel to Si(110). A channeling effect for MeV He(+) ions was not found for this material. Potential commercial applications of this research may be found in silicon-integrated infrared detector arrays. Optical characterizations showed that semiconducting ReSi2 is a strong absorber of infrared radiation, with the adsorption constant increasing above 2 x 10(exp 4) cm(sup -1) for photon energies above 0.2 eV. CrSi2 is of potential utility for detection at photon energies above approximately 0.3 eV.

Mahan, John E.↗
DOE OSTI2023

Heterogeneous integration of an electro-optical platform

A hybrid photonic integrated circuit and a method of its manufacture are provided. A SiP functional layer is fabricated on an SOI wafer. A lithium niobate thin film is bonded to the SiP functional layer. The silicon handle layer is removed from the SOI wafer to expose buried oxide, and at least one III-V die is bonded to the exposed buried oxide. In embodiments, at least one waveguiding component is fabricated in the SiP functional layer. In embodiments, the SiP functional layer comprises a top waveguiding layer.

Kodigala, Ashok↗
NASA NTRS1995

Spectral Changes in Metal Halide and High-pressure Sodium Lamps Equipped with Electronic Dimming

Electronic dimming of high-intensity discharge lamps offers control of photosynthetic photon flux (PPF) but is often characterized as causing significant spectral changes. Growth chambers with 400-W metal halide (MH) and high-pressure sodium (HPS) lamps were equipped with a dimmer system using silicon-controlled rectifiers (SCR) as high-speed switches. Phase control operation turned the line power off for some period of the alternating current cycle. At full power, the electrical input to HPS and MH lamps was 480 W (root mean squared) and could be decreased to 267 W and 428 W, respectively, before the arc was extinguished. Concomitant with this decrease in input power, PPF decreased by 60% in HPS and 50% in MH. The HPS lamp has characteristic spectral peaks at 589 and 595 nm. As power to the HPS lamps was decreased, the 589-nm peak remained constant while the 595-nm peak decreased, equaling the 589-nm peak at 345-W input, and the 589-nm peak was almost absent at 270-W input. The MH lamp has a broader spectral output but also has a peak at 589 nm and another smaller peak at 545 nm. As input power to the MH lamps decreased, the peak at 589 diminished to equal the 545-nm peak. As input power approached 428 W, the 589-nm peak shifted to 570 nm. While the spectrum changed as input power was decreased in the MH and HPS lamps, the phytochrome equilibrium ratio (P(sub fr):P(sub tot)) remains unchanged for both lamp types.

Bubenheim, David L.↗