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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 451 records · Page 25
All sourcesNASA NTRSDOE OSTI
NASA NTRS1997

Analysis of Technology for Solid State Coherent Lidar

Over the past few years, considerable advances have been made in the areas of the diode-pumped, eye-safe, solid state lasers, wide bandwidth, semiconductor detectors operating in the near-infrared region. These advances have created new possibilities for the development of low-cost, reliable, and compact coherent lidar systems for measurements of atmospheric winds and aerosol backscattering from a space-based platform. The work performed by the UAH personnel concentrated on design and analyses of solid state pulsed coherent lidar systems capable of measuring atmospheric winds from space, and design and perform laboratory experiments and measurements in support of solid state laser radar remote sensing systems which are to be designed, deployed, and used by NASA to measure atmospheric processes and constituents. A lidar testbed system was designed and analyzed by considering the major space operational and environmental requirements, and its associated physical constraints. The lidar optical system includes a wedge scanner and the compact telescope designed by the UAH personnel. The other major optical components included in the design and analyses were: polarizing beam splitter, routing mirrors, wave plates, signal beam derotator, and lag angle compensator. The testbed lidar optical train was designed and analyzed, and different design options for mounting and packaging the lidar subsystems and components and support structure were investigated. All the optical components are to be mounted in a stress-free and stable manner to allow easy integration and alignment, and long term stability. This lidar system is also intended to be used for evaluating the performance of various lidar subsystems and components that are to be integrated into a flight unit and for demonstrating the integrity of the signal processing algorithms by performing actual atmospheric measurements from a ground station.

Amzajerdian, Farzin↗
DOE OSTI2022

The seeds and homogeneous nucleation of photoinduced nonthermal melting in semiconductors due to self-amplified local dynamic instability

Laser-induced nonthermal melting in semiconductors has been studied over the past four decades, but the underlying mechanism is still under debate. Here, by using an advanced real-time time-dependent density functional theory simulation, we reveal that the photoexcitation-induced ultrafast nonthermal melting in silicon occurs via homogeneous nucleation with random seeds originating from a self-amplified local dynamic instability. Because of this local dynamic instability, any initial small random thermal displacements of atoms can be amplified by a charge transfer of photoexcited carriers, which, in turn, creates a local self-trapping center for the excited carriers and yields the random nucleation seeds. Because a sufficient amount of photoexcited hot carriers must be cooled down to band edges before participating in the self-amplification of local lattice distortions, the time needed for hot carrier cooling is the response for the longer melting time scales at shorter laser wavelengths. This finding provides fresh insights into photoinduced ultrafast nonthermal melting.

42 ENGINEERING↗
DOE OSTI2022

Floquet vortex states induced by light carrying an orbital angular momentum

Here, we propose a scheme to create an electronic Floquet vortex state by irradiating a two-dimensional semiconductor with a laser light carrying nonzero orbital angular momentum. We analytically and numerically study the properties of the Floquet vortex states, with methods analogous to the ones previously applied to the analysis of superconducting vortex states. We show that such Floquet vortex states are similar to superconducting vortex states, and they exhibit a wide range of tunability. To illustrate the potential utility of such tunability, we show how such states could be used for quantum state engineering.

2-dimensional systems↗
NASA NTRS2005

Mid-IR interband cascade lasers

Efficient mid-IR interband cascade (IC) lasers are developed based on 111-V semiconductor materials to cover wavelength range from 2.7 to 5.6 (mu)m. These IC lasers reuse injected electrons in cascade stages for photon generation with high quantum efficiency to achieve high output powers. Also, IC lasers have low threshold current density with very efficient use of applied voltage, resulting in reduced power consumptions. Single-mode distributed feedback lasers have been made, and integrated into aircraft and balloon instrument which made measurements of CH4 and HCI. In this work, the characteristics of IC lasers and their recent development are reviewed.

mid - infrared↗
DOE OSTI2025

Role of the junction voltage on the overflow current in light-emitting diodes

Quantum-well (QW)-based light emitters, such as light-emitting diodes (LEDs) and lasers, of various semiconductor materials experience a reduction in their efficiency when operating at higher temperatures, a phenomenon referred to as “thermal droop.” Among the various claims on the origins of thermal droop, an increased overflow current with increasing temperatures is a common contender. Since overflow of carriers can only occur when the junction voltage 𝑉 Junction approaches the built-in voltage 𝑉 BI of any diodes, we develop a simple method relating the difference between 𝑉 Junction and 𝑉 BI to approximate the upper limit of overflow occurring in QW-based light-emitting diodes. The measured difference between 𝑉 Junction and 𝑉 BI of state-of-the-art commercial blue and green In⁢Ga⁢N-based LEDs at temperatures up to ∼450 K suggests negligible overflow. To further experimentally verify the absence of overflow, we perform temperature-dependent electron emission spectroscopy on the same commercial blue and green LEDs and find no evidence of thermally enhanced overflow carriers up to ∼450 K. In agreement with our claims that 𝑉 Junction must approach 𝑉 BI for overflow to occur, two-dimensional temperature-dependent electrical simulations of violet, blue, and green LEDs including alloy disorder and V-defects demonstrate that overflow can be significant in violet LEDs, where the small band offset between the In⁢Ga⁢N QW and Ga⁢N cladding layers due to the larger QW bandgap requires larger 𝑉 Junction to reach standard operating current densities, thereby approaching 𝑉 BI . By contrast, simulations indicate that overflow is negligible in blue and green LEDs, whose smaller QW bandgaps result in smaller quasi-Fermi levels difference to reach significant carrier injection, resulting in a 𝑉 Junction much smaller than 𝑉 BI up to large operating current densities. Considering that overflow is negligible in blue and longer-wavelength LEDs, and our observations of the large thermal droop occurring at low current densities, where Shockley-Read-Hall (SRH) recombination dominates, we conclude that thermally enhanced SRH processes are the most significant contributor to thermal droop. Finally, we also simulate the carrier densities in the different QWs of a multiple-QW LED and observe a reduction in the total carrier density at a given operating current density, which results in a decrease in the total Auger-Meitner current of the LED from just the thermally enhanced carrier redistribution among QWs without taking any possible additional temperature dependence of their recombination coefficients. Taking all this into account, minimizing thermal droop effects in LEDs can be achieved by a reduction in defect density, using wider band gap p-n junction-defining cladding layers, and operating at higher currents.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

X-ray Multilayers for Next-Generation Astrophysics Missions

In this work, we proposed to demonstrate the feasibility of high-reflectivity multilayer coatings that will enable next-generation astrophysics missions in the x-ray region (2 – 7 nm wavelengths) where currently high-performance coatings largely do not exist. This paucity is due to multilayer interfacial effects that severely reduce the coating reflectance; our approach was based on understanding these interfacial effects and on tailored process modifications to control and minimize them. The experimental validation of our approach was made difficult by our multilayer deposition tool being down for a large portion of the project. The required repairs used significant amount of funding and time, which forced to reduce the scope of the project. Our experimental study focused on Cr/C multilayers and their optimization using N2 reactive sputtering. We showed that the highest reflectance was achieved when depositing the multilayers with 35% N2, and with a larger Cr thickness ratio than what was initially predicted by simulations. This result consists of a 13% relative increase in reflectivity compared to our previous work. It will benefit upcoming NASA proposals and LLNL’s leadership in this area, as well as topics highly relevant to LLNL/DOE’s priority areas, such as x-ray laser science and semiconductor manufacturing. This work will be further investigated as part of a Laboratory Directed Research and Development (LDRD) Exploratory Research (ER) project starting in Fiscal Year (FY) 2024.

36 MATERIALS SCIENCE↗
NASA NTRS1974

Infrared heterodyne spectroscopy of astronomical and laboratory sources at 8.5 micron

The first infrared heterodyne spectrometer using tuneable semiconductor (PbSe) diode lasers has been constructed and was used near 8.5 micron to measure absorption line profiles of N2O in the laboratory and black body emission from the Moon and from Mars. Spectral information was recorded over a 200 MHz bandwidth using an 8-channel filter bank. The resolution was 25 MHz and the minimum detectable (black body) power was 1 x 10 to the minus 16th power watts for 8 minutes of integration. The results demonstrate the usefulness of heterodyne spectroscopy for the study of remote and local sources in the infrared.

Mumma, M.↗
NASA NTRS1985

Light-Activated Microwave Device

Laser-activated microwave semiconductor device switches at microwave speeds, generates pulses, or detects optical pulses with fast response. Device consists essentially of back-to-back metal/thin oxide/silicon (MTOS) capacitors on silicon chip.

Maserjian, J.↗
NASA NTRS2005

Application of Hilbert-Huang Transform for Improved Defect Detection in Terahertz NDE of Shuttle Tiles

Terahertz NDE is being examined as a method to inspect the adhesive bond-line of Space Shuttle tiles for defects. Terahertz signals are generated and detected, using optical excitation of biased semiconductors with femtosecond laser pulses. Shuttle tile samples were manufactured with defects that included repair regions unbond regions, and other conditions that occur in Shuttle structures. These samples were inspected with a commercial terahertz NDE system that scanned a tile and generated a data set of RF signals. The signals were post processed to generate C-scan type images that are typically seen in ultrasonic NDE. To improve defect visualization the Hilbert-Huang Transform, a transform that decomposes a signal into oscillating components called intrinsic mode functions, was applied to test signals identified as being in and out of the defect regions and then on a complete data set. As expected with this transform, the results showed that the decomposed low-order modes correspond to signal noise while the high-order modes correspond to low frequency oscillations in the signal and mid-order modes correspond to local signal oscillations. The local oscillations compare well with various reflection interfaces and the defect locations in the original signal.

Anastasi, Robert F.↗
NASA NTRS2006

Terahertz NDE for Metallic Surface Roughness Evaluation

Metallic surface roughness in a nominally smooth surface is a potential indication of material degradation or damage. When the surface is coated or covered with an opaque dielectric material, such as paint or insulation, then inspecting for surface changes becomes almost impossible. Terahertz NDE is a method capable of penetrating the coating and inspecting the metallic surface. The terahertz frequency regime is between 100 GHz and 10 THz and has a free space wavelength of 300 micrometers at 1 THz. Pulsed terahertz radiation, can be generated and detected using optical excitation of biased semiconductors with femtosecond laser pulses. The resulting time domain signal is 320 picoseconds in duration. In this application, samples are inspected with a commercial terahertz NDE system that scans the sample and generates a set of time-domain signals that are a function of the backscatter from the metallic surface. Post processing is then performed in the time and frequency domains to generate C-scan type images that show scattering effects due to surface non-uniformity.

Madaras, Eric I.↗
NASA NTRS2001

Power enhanced frequency conversion system

A frequency conversion system includes at least one source providing a first near-IR wavelength output including a gain medium for providing high power amplification, such as double clad fiber amplifier, a double clad fiber laser or a semiconductor tapered amplifier to enhance the power output level of the near-IR wavelength output. The NFM device may be a difference frequency mixing (DFM) device or an optical parametric oscillation (OPO) device. Pump powers are gain enhanced by the addition of a rare earth amplifier or oscillator, or a Ra-man/Brillouin amplifier or oscillator between the high power source and the NFM device.

Sanders, Steven↗
NASA NTRS2021

On Parametric Generation of Deep UV Light in Monolithic Cavities With Cubic Nonlinearity

Coherent ultra violet (UV) light has broad applications in optical atomic clocks and quantum computers. Since availability of semiconductor tunable monochromatic lasers is limited at short wavelengths, optical nonlinear processes are frequently used to produce the desirable radiation wavelength. Optical crystals with quadratic nonlinearity are promising for this purpose because of their transparency and high optical damage threshold. In this paper we discuss a possibility of generation of coherent deep UV light utilizing high quality factor (-Q) monolithic optical microcavities made of crystalline optical materials characterized with cubic nonlinearities. We show that the generation is feasible in spite of the relatively small cubic nonlinearities, due to the ultra-broad-band high optical transparency of the crystals and associated high-Q achievable in the cavities created out of the materials. We found that the birefringence as well as the tensor nature of the nonlinear susceptibility of the crystalline optical materials can simplify the phase matching of the nonlinear processes.

Matsko, A.B.↗
DOE OSTI2020

Metal phosphide nanomaterials prepared from single source metal amides

The present invention provides a novel solution or route for metal phosphide (MPx) nanomaterials from the thermal decomposition of metal bis[bis(diisopropylphosphino)amide], M[N(PPri2)2]2, and/or single-source precursors. Synthetic routes to MPx nanomaterials may be used in energy applications including batteries, semiconductors, magnets, catalyst, lasers, inks, electrocatalysts and photodiodes.

Kemp, Richard Alan↗
DOE OSTI2020

Effect of p-doping on the intensity noise of epitaxial quantum dot lasers on silicon

This work experimentally investigates the impact of p-doping on the relative intensity noise (RIN) properties and subsequently on the modulation properties of semiconductor quantum dot (QD) lasers epitaxially grown on silicon. Owing to the low threading dislocation density and the p-modulation doped GaAs barrier layer in the active region, the RIN level is found very stable with temperature with a minimum value of − <#comment/> 150 d B / H z . The dynamical features extracted from the RIN spectra show that p-doping between zero and 20 holes/dot strongly modifies the modulation properties and gain nonlinearities through increased internal losses in the active region and thereby hinders the maximum achievable bandwidth. Overall, this Letter is important for designing future high-speed and low-noise QD devices integrated in future photonic integrated circuits.

Duan, Jianan (ORCID:0000000177104287)↗
NASA NTRS1981

Forming electrical interconnections through semiconductor wafers

An information processing system based on CMOS/SOS technology is being developed by NASA to process digital image data collected by satellites. An array of holes is laser drilled in a semiconductor wafer, and a conductor is formed in the holes to fabricate electrical interconnections through the wafers. Six techniques are used to form conductors in the silicon-on-sapphire (SOS) wafers, including capillary wetting, wedge extrusion, wire intersection, electroless plating, electroforming, double-sided sputtering and through-hole electroplating. The respective strengths and weaknesses of these techniques are discussed and compared, with double-sided sputtering and the through-hole plating method achieving best results. In addition, hollow conductors provided by the technique are available for solder refill, providing a natural way of forming an electrically connected stack of SOS wafers.

Anthony, T. R.↗
NASA NTRS1980

Improved vapor-growth technique for III-V compound lasers

Vapor Growth technical of multilayered semiconductor devices based on elements in groups 3, 4, and 5 such as transmission photo cathodes and heterojunction lasers, reduces thermal decomposition and improves performance. In addition technique allows fabrication of GaP/GaAsP/InGaP, visable CW lasers through reduction of thermal decomposition.

Bujocchi, C. J.↗
NASA NTRS1986

Zone Refining by Laser

System developed for studying use of laser beam for zone-refining semiconductors and metals. Specimen scanned with focused CO2 laser beam in such way that thin zone of molten material moves along specimen sweeps impurities with it. Zone-melting system comprises microcomputer, laser, electromechanical and optical components for beam control, vacuum chamber that holds specimen, and sensor for determining specimen temperature.

Griner, D. B.↗