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At least 451 records · Page 25

Visible photoluminescence of porous Si(1-x)Ge(x) obtained by stain etching

We have investigated visible photoluminescence (PL) from thin porous Si(1-x)Ge(x) alloy layers prepared by stain etching of molecular-beam-epitaxy-grown material. Seven samples with nominal Ge fraction x varying from 0.04 to 0.41 were studied at room temperature and 80 K. Samples of bulk stain etched Si and Ge were also investigated. The composition of the porous material was determined using X-ray photoemission spectroscopy and Rutherford backscattering techniques to be considerably more Ge-rich than the starting epitaxial layers. While the luminescence intensity drops significantly with the increasing Ge fraction, we observe no significant variation in the PL wavelength at room temperature. This is clearly in contradiction to the popular model based on quantum confinement in crystalline silicon which predicts that the PL energy should follow the bandgap variation of the starting material. However, our data are consistent with small active units containing only a few Si atoms that are responsible for the light emission. Such units are present in many compounds proposed in the literature as the cause of the visible PL in porous Si.

Ksendzov, A.↗

Growth of Si spherical crystals and the surface oxidation (M-9)

Nearly 90 percent of semiconductor devices are produced with Si single crystals as the starting materials. For instance, the integrated circuits (IC), which are used in almost all electronic equipments such as TV, tape recorders, audio amplifiers, etc., are made after various processings of Si single crystal wafers. In these wafers, the same controlled amounts of impurities are added and the uniformities in their distributions are extremely important. Growth under microgravity makes it possible to eliminate the buoyancy-driven convection in the melt, which is one of the main origins of convections which results in non-uniformity of the impurity. Another source of convection is known as Marangoni convection which is driven on the free surface when a temperature gradient occurs. One of the merits of microgravity experimentation is that the detailed study of this convection becomes possible. Another important advantage of microgravity is that growth of crystals without a crucible is possible. This makes it possible to study melt growth without the strain which is usually introduced on the ground. Nevertheless, we should repeat and analyze many growth experiments in space to get reliable results. However, since in the FMPT, the time for the experiment is limited, we plan to carry out two kinds of very simple and basic experiments as the first step for the semiconductor growth experiment. In the first experiment, we use single crystal Si sphere as the starting material and as shown, this sphere is heated in the furnace at a slightly higher temperature than the melting point. After the melting front moves nearly half way to its center, the temperature is decreased to stop the melting and to start the growth from the seed for which we use the unmelted solid party of the sphere. The sphere is centered by quartz protuberances inside of the quartz crucible. There exists the possibility of temperature fluctuations being introduced when the molten sphere occasionally touches the protuberances. The total time needed for the melting and the growth processes is estimated to be 30 minutes. Infrared emission from the sphere is monitored in order to prevent the accidental loss of the central solid core. The schematical illustration of the second experient is shown. A single crystal, Si rod is used as the starting material. In the first stage, the rod is melted from one end to obtain a liquid sphere. In the second stage, the single crystal is grown by decreasing the temperature from the unmelted part of the rod which is used as the seed. The second experient somewhat resembles the Czochralski method used on the ground; however, in the space experiment, no crucible is employed and the temperature uniformity is much superior. In both experiments, phosphorous is doped to allow observation of the change in the shape of the liquid solid interface during crystal growth and the impurity striations, if any.

Nishinaga, Tatau↗

Fabrication of Si-As-Te ternary amorphous semiconductor in the microgravity environment (M-13)

Ternary chalcogenide Si-As-Te system is an interesting semiconductor from the aspect of both basic physics and technological applications. Since a Si-As-Te system consists of a IV-III-II hedral bonding network, it has a very large glass forming region with a wide physical constant controllability. For example, its energy gap can be controlled in a range from 0.6 eV to 2.5 eV, which corresponds to the classical semiconductor Ge (0.66 eV), Si (1.10 eV), GaAs (1.43 eV), and GaP (2.25 eV). This fact indicates that it would be a suitable system to investigate the compositional dependence of the atomic and electronic properties in the random network of solids. In spite of these significant advantages in the Si-As-Te amorphous system, a big barrier impending the wide utilization of this material is the huge difficulty encountered in the material preparation which results from large differences in the weight density, melting point, and vapor pressure of individual elements used for the alloying composition. The objective of the FMPT/M13 experiment is to fabricate homogeneous multi-component amorphous semiconductors in the microgravity environment of space, and to make a series of comparative characterizations of the amorphous structures and their basic physical constants on the materials prepared both in space and in normal terrestrial gravity.

Hamakawa, Yoshihiro↗

Infrared Detectors Containing Stacked Si(1-x)Ge(x)/Si Layers

Long-wavelength-infrared detectors containing multiple layers of high-quality crystalline p(+) Si(1-x)Ge(x) alternating with layers of Si undergoing development. Each detector comprises stack of Si(1-x)Ge(x)/Si heterojunction internal photoemission (HIP) photodetectors. In comparison with older HIP detectors containing single Si(1-x)Ge(x)/Si heterojunctions, developmental detectors feature greater quantum efficiencies and stronger photoresponses.

Park, Jin S.↗

Langley Research Center - Soluble Imide (LaRC-SI)

This report is about experimenting and developing uses for the new thermal plastic developed by Dr. Robert Bryant called the 'Langley Research Center - Soluble Imide' (LaRC-SI). The three developments are: the use of the LaRC-SI as a dielectric for thin film sensors, as an adhesive to place diamonds on surfaces to increase thermal conductivity, and as an intermediate layer to allow the placement of metal on aluminum nitride. The LaRC-SI was developed by Dr. Robert G. Bryant, a chemical engineer at NASA Langley Research Center. The unique properties of this material is that it is an amorphous thermoplastic. This means that it can be reformed at elevated temperature and pressures. It can be applied in the form of a spray, spin, dip coating, paint, or spread with a doctors blade. The LaRC-SI has excellent adhesive and dielectric properties. It can also be recycled. Potential applications for this material are resin for mechanical parts such as gears, bearings and valves, advanced composites like carbon fiber, high strength adhesives, thin film circuits, and as a dielectric film for placing electrical components on conductive materials.

Stang, David↗

Ballistic-Electron-Emission-Microscopy of Strained Si(sub 1-x)Ge(sub x) Layers

Ballistic-electron-emission microscopy (BEEM) has been used to investigate the effects of strain on Si(sub 1-x)Ge(sub x) alloys. Lifting of the degeneracy of the conduction-band minimum of Si(sub 1-x)Ge(sub x), due to lattice deformation has been directly measured by application of BEEM spectroscopy to Ag/Si structures. Experimental values for this conduction-band splitting agree well with calculations. In addition, an unexpected heterogeneity in the strain of the Si(sub 1-x)Ge(sub x) layer is introduced by deposition of Au. This effect, not observed with Ag, is attributed to species interdiffusion and has important implications for metal-semiconductor devices based oil pseudomorphic Si(sub 1-x)Ge(sub x)/Si material systems.

Bell, L. D.↗

Mass Spectrometric Identification of Si-O-H(g) Species from the Reaction of Silica with Water Vapor at Atmospheric Pressure

A high-pressure sampling mass spectrometer was used to detect the volatile species formed from SiO2 at temperatures between 1200C and 1400C in a flowing water vapor/oxygen gas mixture at 1 bar total pressure. The primary vapor species identified was Si(OH)4. The fragment ion Si(OH)3+,' was observed in quantities 3 to 5 times larger than the parent ion Si(OH)4+. The Si(OH)3+ intensity was found to have a small temperature dependence and to increase with the water vapor partial pressure as expected. In addition, SiO(OH)+ believed to be a fragment of SiO(OH)2, was observed. These mass spectral results were compared to the behavior of silicon halides.

Opila, Elizabeth J.↗

Stellar Calibration of the WIC and SI Imagers and the GEO Photometers on IMAGE/FUV

The FUV instrument on the IMAGE spacecraft comprises three wide-field imagers, the Wide-Band Imaging Camera (WIC) of observing N2 Lyman-Birge-Hopfield (LBH) (140-190 nm) emissions and the Spectrographic Imager (SI), which has a 121.8 nm channel for observing red-shifted HI Lya photons and a 135.6 run channel for observing 01 135.6 nm emissions. In addition, three HI Lya photometers (GEO) are used to monitor the geocorona. The fields of view are 17 degrees x 17 degrees for the WIC imagers, 15 degrees x 15 degrees for the two SI imagers, and 10 diameter for the three GEO photometers. As the IMAGE spacecraft spins every 120 seconds, the GEO photometers sweep out circles on the sky (at 0 degrees and plus or minus 30 degrees with respect to the spacecraft spin plane), and the WIC and SI imagers use the Time Delay Integration (TDI) method to construct images centered on the Earth. Many FUV-bright stars are seen in the WIC, SI and even the GEO data. WE have used archived International Ultraviolet Explorer (IUE) far-ultraviolet flux spectra for 22 of the brightest of these stars to help refine the FUV instrumental sensitivities. The stars chosen range in spectral type form B0V to A11V, with magnitudes ranging from V- 1.3 (a Cru) to V=4.7 (G Cen) (although many more fainter stars are also seen). The initial results of this stellar calibration will be presented and compared with the pre-flight and dayglow modeling results.

Gladstone, R.↗

Differentiating Between H and F or H and CN on C(III) or Si(III) Surfaces

A Sc tipped probe molecule yields a larger difference for the probe-H vs probe-F interaction energies than our previously studied, electron-rich pyridine (C5H5N) and (CH3)3PO probes. However, the electron-deficient Sc tipped probe does not eliminate the probe-nearest data neighbor interaction problem associated with the C(III) surface. The difference in the probe-H and probe-F interaction energies is smaller for Si(III) than C(III), making it more difficult to differentiate between these two atoms on Si(III). The larger lattice constant for Si(III) significantly reduces the data atom-data atom interaction energy as well as the probe-neighbor interaction energies. This means that the H/CN system which is not practical for C(III) due to the CN-CN repulsion, is possible for Si(III). The difference in the probe-H and probe-CN interaction energies is very large for the H/CN data storage system, making this the best system studied to date. This system could be used on C(III) if a hydrogen 'fence' is built around each data site, which corresponds to using only one quarter of the surface sites for data storage.

Bauschlicher, Charles W.↗

The Stellar Imager (SI)"Vision Mission"

The Stellar Imager (SI) is a "Vision" mission in the Sun-Earth Connection (SEC) Roadmap, conceived for the purpose of understanding the effects of stellar magnetic fields, the dynamos that generate them, and the internal structure and dynamics of the stars in which they exist. The ultimate goal is to achieve the best possible forecasting of solar/stellar magnetic activity and its impact on life in the Universe. The science goals of SI require an ultra-high angular resolution, at ultraviolet wavelengths, on the order of 100 micro-arcsec and thus baselines on the order of 0.5 km. These requirements call for a large, multi-spacecraft (less than 20) imaging interferometer, utilizing precision formation flying in a stable environment, such as in a Lissajous orbit around the Sun-Earth L2 point. SI's resolution will make it an invaluable resource for many other areas of astrophysics, including studies of AGN s, supernovae, cataclysmic variables, young stellar objects, QSO's, and stellar black holes. ongoing mission concept and technology development studies for SI. These studies are designed to refine the mission requirements for the science goals, define a Design Reference Mission, perform trade studies of selected major technical and architectural issues, improve the existing technology roadmap, and explore the details of deployment and operations, as well as the possible roles of astronauts and/or robots in construction and servicing of the facility.

Carpenter, Ken↗

SI: The Stellar Imager

The ultra-sharp images of the Stellar Imager (SI) will revolutionize our view of many dynamic astrophysical processes: The 0.1 milliarcsec resolution of this deep-space telescope will transform point sources into extended sources, and simple snapshots into spellbinding evolving views. SI s science focuses on the role of magnetism in the Universe, particularly on magnetic activity on the surfaces of stars like the Sun. SI s prime goal is to enable long-term forecasting of solar activity and the space weather that it drives in support of the Living With a Star program in the Exploration Era by imaging a sample of magnetically active stars with enough resolution to map their evolving dynamo patterns and their internal flows. By exploring the Universe at ultra-high resolution, SI will also revolutionize our understanding of the formation of planetary systems, of the habitability and climatology of distant planets, and of many magnetohydrodynamically controlled structures and processes in the Universe.

Carpenter, Kenneth G.↗

Commercialization of LARC (TradeMark) -SI Polyimide Technology

LARC(TradeMark)-SI, Langley Research Center- Soluble Imide, was developed in 1992, with the first patent issuing in 1997, and then subsequent patents issued in 1998 and 2000. Currently, this polymer has been successfully licensed by NASA, and has generated revenues, at the time of this reporting, in excess of $1.4 million. The success of this particular polymer has been due to many factors and many lessons learned to the point that the invention, while important, is the least significant part in the commercialization of this material. Commercial LARC(TradeMark)-SI is a polyimide composed of two molar equivalents of dianhydrides: 4,4 -oxydiphthalic anhydride (ODPA), and 3,3 ,4,4 -biphenyltetracarboxylic dianhydride (BPDA) and 3,4 -oxydianiline (3,4 -ODA) as the diamine. The unique feature of this aromatic polyimide is that it remains soluble after solution imidization in high-boiling, polar aprotic solvents, even at solids contents of 50-percent by weight. However, once isolated and heated above its T(sub g) of 240 C, it becomes insoluble and exhibits high-temperature thermoplastic melt-flow behavior. With these unique structure property characteristics, it was thought this would be an advantage to have an aromatic polyimide that is both solution and melt processable in the imide form. This could potentially lead to lower cost production as it was not as equipment- or labor-intensive as other high-performance polyimide materials that either precipitate or are intractable. This unique combination of properties allowed patents with broad claim coverage and potential commercialization. After the U.S. Patent applications were filed, a Small Business Innovation Research (SBIR) contract was awarded to Imtec, Inc. to develop and supply the polyimide to NASA and the general public. Some examples of demonstration parts made with LARC(TradeMark)-SI ranged from aircraft wire and multilayer printed-circuit boards, to gears, composite panels, supported adhesive tape, composite coatings, cookware, and polyimide foam. Even with its unique processing characteristics, the thermal and mechanical properties were not drastically different from other solution or meltprocessable polyimides developed by NASA. LARC(TradeMark)-SI risked becoming another interesting, but costly, high-performance material.

Bryant, Robert G.↗

Cross-calibration of Imaging Sensors using Model-based, SI-traceable Predictions of At-sensor Radiance

Many inter-consistency efforts force empirical agreement between sensors viewing a source nearly coincident in time and geometry that ensures consistency between sensors rather than obtain an SI-traceable calibration with documented error budgets. The method described here provides interconsistency via absolute radiometric calibration with defensible error budget avoiding systematic errors through prediction of at-sensor radiance for a site viewed by multiple sensors but not necessarily viewed at coincident times. The method predicts spectral radiance over a given surface site for arbitrary view and illumination angles and for any date dominated by clear-sky conditions. The foundation is a model-based, SI-traceable prediction of at-sensor radiance over selected sites based on physical understanding of the surface and atmosphere. The calibration of the ground site will include spatial, spectral, and sunview geometric effects based on satellite and ground-based data. The result is an interconsistency of hyperspectral and multispectral sensors spanning spatial resolutions from meters to kilometers all relative to the surface site rather than a single sensor. The source-centric philosophy of calibrating the site inherently accounts for footprint size mismatch, spectral band mismatch, and temporal and spatial sampling effects. The method for characterizing the test site allows its use for SI-traceable calibration of any sensor that can view the calibrated test site. Interconsistency is obtained through the traceability and error budget rather than coincident views. Such an approach to inter-consistency provides better understanding of biases between sensors as well producing more accurate results with documented SI-traceability that reduces the need for overlapping data sets.

Thome, Kurtis↗

Electrolytes with Improved Safety Developed for High Specific Energy Li-Ion Cells with Si-Based Anodes

A number of electrolyte formulations that have improved safety characteristics have been developed for use with high capacity silicon-based anodes. To improve the compatibility with Si-based anodes, a number of technical approaches have been employed, including: (1) the use of mono-fluoroethylene carbonate (FEC) in conjunction with, or in lieu of, ethylene carbonate (EC), (2) the use of high proportions of fluorinated co-solvents, (3) the use of vinylene carbonate (VC) to stabilize the Si/C electrode, and (4) the use of lithium bis(oxalato)borate (LiBOB) to improve the compatibility of the electrolyte when Si/C electrodes are used in conjunction with high voltage cathodes. Candidate electrolytes were studied in Li/Si-C and Si-C/ Li(MnNiCo)O2 (NMC) coin cells, as well as in larger Si-C/NMC three-electrode cells equipped with lithium reference electrodes. In summary, many electrolytes that contain triphenyl phosphate (TPP), which is used as a flame retardant additive up to concentrations of 15 volume percent, and possess FEC as a co-solvent have been demonstrated to outperform the all-carbonate baseline electrolytes when evaluated in Si-C/ Li(MnNiCo)O2 cells.

Silicon-Based Anode↗

Characterization of Si (sub X)Ge (sub 1-x)/Si Heterostructures for Device Applications Using Spectroscopic Ellipsometry

Spectroscopic ellipsometry (SE) characterization of several complex Si (sub X)Ge (sub 1-x)/Si heterostructures prepared for device fabrication, including structures for heterojunction bipolar transistors (HBT), p-type and n-type heterostructure modulation doped field effect transistors, has been performed. We have shown that SE can simultaneously determine all active layer thicknesses, Si (sub X)Ge (sub 1-x) compositions, and the oxide overlayer thickness, with only a general knowledge of the structure topology needed a priori. The characterization of HBT material included the SE analysis of a Si (sub X)Ge (sub 1-x) layer deeply buried (600 nanometers) under the silicon emitter and cap layers. In the SE analysis of n-type heterostructures, we examined for the first time a silicon layer under tensile strain. We found that an excellent fit can be obtained using optical constants of unstrained silicon to represent the strained silicon conduction layer. We also used SE to measure lateral sample homogeneity, providing quantitative identification of the inhomogeneous layer. Surface overlayers resulting from prior sample processing were also detected and measured quantitatively. These results should allow SE to be used extensively as a non-destructive means of characterizing Si (sub X)Ge (sub 1-x)/Si heterostructures prior to device fabrication and testing.

Sieg, R. M.↗

Effect of Silicon on Activity Coefficients of P, Bl, CD, SN, and AG in Liquid Fe-Si, and Implications for Differentiation and Core Formation

Cores of differentiated bodies (Earth, Mars, Mercury, Moon, Vesta) contain light elements such as S, C, Si, and O. We have previously measured small effects of Si on metal-silicate partitioning of Ni and Co [1,2], and larger effects for Mo, Ge, Sb, As [2]. The effect of Si on many siderophile elements could be an important, and as yet unquantified, influence on the core-mantle partitioning of SE. Here we report new experiments designed to quantify the effect of Si on the partitioning of Bi, Cd, Sn, Ag, and P between metal and silicate melt. The results will be applied to Earth, Mars, Mercury, Moon, and Vesta, for which we have excellent constraints on the mantle Bi, Cd, Sn, Ag, and P concentrations from mantle and/or basalt samples.

Righter, K.↗

Effect of Silicon on Activity Coefficients of P, Bi, Cd, Sn, and Ag in Liquid Fe-Si, and Implications for Core Formation

Cores of differentiated bodies (Earth, Mars, Mercury, Moon, Vesta) contain light elements such as S, C, Si, and O. We have previously measured small effects of Si on Ni and Co, and larger effects on Mo, Ge, Sb, As metal/silicate partitioning. The effect of Si on metal-silicate partitioning has been quantified for many siderophile elements, but there are a few key elements for which the effects are not yet quantified. Here we report new experiments designed to quantify the effect of Si on the partitioning of Bi, Cd, Sn, Ag, and P between metal and silicate melt. The results will be applied to Earth, Mars, Moon, and Vesta, for which we have good constraints on the mantle Bi, Cd, Sn, Ag, and P concentrations from mantle and/or basalt samples.

Righter, K.↗