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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 451 records · Page 25
All sourcesNASA NTRSDOE OSTI
NASA NTRS1981

Non-thermal O/1D/ produced by dissociative recombination of O2/+/ - A theoretical model and observational results

Thermal and nonthermal O(1D) number density profiles are calculated. The two populations are assumed to be coupled by a thermalization cross-section which determines the loss and production in the nonthermal and thermal populations, respectively. The sources, sinks and transport of the two populations are used to model volume emission rate profiles at 6300 A. The 6300 A brightness measured by the Visible Airglow Experiment is then used to establish the presence of the nonthermal population and to determine the thermalization cross-section.

Schmitt, G. A.↗
NASA NTRS1982

Catalytic recombination and Space Shuttle heating

The measurement of surface temperatures on the thermal protection materials of the Space Shuttle Orbiter during reentry provides the basis for an important test of the prediction techniques developed over the past 10 years for reacting flows over reentry vehicles. The present investigation is concerned with comparisons of calculated temperatures with those measured during the second and third Space Shuttle missions. The general trends of the calculations compared favorably with the measurements. However, the calculations overpredicted the temperatures on the forward part of the windward centerline. Agreement was better farther aft, especially at the later times in the entry. The investigation has pointed out the significance of surface chemical reactions on the heat flux to the surface of the Orbiter and the need for further understanding.

Scott, C. D.↗
NASA NTRS1983

Oxygen-induced recombination centers in as-grown Czochralski silicon crystals

Simultaneous quantitative microprofiles of the interstitial oxygen concentration and of the excess carrier lifetime are obtained in Czochralski-grown Si crystals employing double laser absorption scanning. It is found that oxygen concentration maxima and minima along the crystal growth direction coincide with lifetime minima and maxima, respectively. Another finding is that the magnitude of oxygen-induced lifetime changes increases dramatically in going from the center to the periphery of the crystal. The findings discussed imply that 'as-grown' oxygen precipitates figure in lifetime-limiting processes.

Nauka, K.↗
NASA NTRS1984

Temperature-dependent reaction-rate expression for oxygen recombination at Shuttle entry conditions

A temperature-dependent oxygen surface reaction-rate coefficient has been determined from experimental STS-2 heating and wall temperature data at altitudes of 77.91 km, 74.98 km, and 71.29 km. The coefficient is presented in an Arrhenius form and is shown to be less temperature dependent than previous results. Finite-rate viscous-shock-layer heating rates based on this present expression have been compared with predicted heating rates using the previous rate coefficients and with experimental heating data obtained over an extensive range of STS-2 and STS-3 entry conditions. A substantial improvement is obtained in comparison of experimental data and predicted heating rates using the present oxygen reaction-rate expression.

Zoby, E. V.↗
NASA NTRS1984

Effect of reabsorbed recombination radiation on the saturation current of direct gap p-n junctions

The application of the radiative transfer theory for semiconductors to p-n homojunctions subject to low level injection conditions is discussed. By virtue of the interaction of the radiation field with free carriers across the depletion layer, the saturation current density in Shockley's expression for the diode current is reduced at high doping levels. The reduction, due to self-induced photon generation, is noticeable for n-type material owing to the small electron effective mass in direct band-gap III-V compounds. The effect is insignificant in p-type material. At an equilibrium electron concentration of 2 x 10 to the 18th/cu cm in GaAs, a reduction of the saturation current density by 15 percent is predicted. It is concluded that realistic GaAs p-n junctions possess a finite thickness.

Von Roos, O.↗
NASA NTRS1987

The production of O(1D) from dissociative recombination of O2(+)

The results of large scale ab initio calculations of the rates for production of O(1D) by dissociative combination of O2(+) are presented for electron temperatures in the range 100 to 3000 K. A 1-delta-u state is the dominant dissociative route from v = 0 and a 3-sigma-u(-) state is the most important route from v = 1 and v = 2. The calculated total rate for O(1D) production from v = 0 is 2.21(+0.21,-0.24) x 10(-7) x (T sub e/300) exp -.46 near room temperature. The v = 1 and v = 2 rates are about 17% and 47% smaller respectively, than the v = 0 rate at 300 K.

Guberman, Steven L.↗
NASA NTRS1987

A computer model for the recombination zone of a microwave-plasma electrothermal rocket

As part of a study of the microwave-plasma electrothermal rocket, a computer model of the flow regime below the plasma has been developed. A second-order model, including axial dispersion of energy and material and boundary conditions at infinite length, was developed to partially reproduce the absence of mass-flow rate dependence that was seen in experimental temperature profiles. To solve the equations of the model, a search technique was developed to find the initial derivatives. On integrating with a trial set of initial derivatives, the values and their derivatives were checked to judge whether the values were likely to attain values outside the practical regime, and hence, the boundary conditions at infinity were likely to be violated. Results are presented and directions for further development are suggested.

Filpus, John W.↗
NASA NTRS1988

A survey of the reaction rate constants for the thermal dissociation and recombination of nitrogen and oxygen

The objective of the present report is to survey the various values of forward and backward reaction rate constants used by investigators in the field of high-temperature (T greater than 2000 K) gas reactions involving nitrogen and oxygen only. The objective is to find those values that correlate well so that they can be used for the studies of hypersonic flow and supersonic combustion with reasonable confidence. Relatively good agreement among these various values is observed for temperatures lower than 10,000 K.

Marraffa, Lionel↗
NASA NTRS1988

The production of O(1D) from dissociative recombination of O2(+)

The results of large scale ab initio calculations of the rates for production of O(1D) by dissociative combination of O2(+) are presented for electron temperatures in the range 100 to 3000 K. A 1-delta-u state is the dominant dissociative route from v = 0 and a 3-sigma-u(-) state is the most important route from v = 1 and v = 2. The calculated total rate for O(1D) production from v = 0 is 2.21(+0.21, -0.24) x 10(-7) x (T sub e/300) exp -.46 near room temperature. The v = 1 and v = 2 rates are about 17 percent and 47 percent smaller respectively, than the v = 0 rate at 300 K.

Guberman, Steven L.↗
NASA NTRS1988

Experimental observation of electrochemical rate limitations affecting sodium ion-electron recombination at electrodes of the alkali metal thermoelectric converter at T about 1200 K

This paper considers a model of the internal impedances of thin porous Mo and W alkali metal thermoelectric converter (AMTEC), in which the kinetic parameters associated with the reaction of the beta-double-prime alumina solid electrolite (BASE)/porous metal/gas three-phase boundary can be evaluated. Impedance data in the frequency range 0.01-100,000 Hz were collected over a range of AMTEC cell operating voltages for small-area thin porous Mo and W electrodes, yielding apparent charge transfer resistances at a series of cell potentials/currents. The ohmic resistance in the AMTEC cell could be broken down and characterized with three parameters: the BASE ionic resistance, the electrode film sheet resistance, and the contact/lead resistance, all of which could be calculated or measured independently and used to calculate power curves in good agreement with observed power curves. It is shown that these calculations can be used to predict the properties of electrodes with optimized parameters or to detect enhanced transport modes.

Williams, R. M.↗
NASA NTRS1990

Recombination reactions of 5-eV O(3P) atoms on a MgF2 surface

A source of hyperthermal, ground-state, impurity-free, atomic oxygen of an energy variable in the range 2-100 eV has been developed. Experimental results are presented of emission spectra in the wavelength range 250-850 nm produced by collisions of 5-eV O(3P) atoms with adsorbed NO and CO molecules on a MgF2 surface.

Orient, O. J.↗
NASA NTRS1991

Hydrodynamic study of Supernova 1987A: The phase of a wave of cooling and recombination

The dependence of the bolometric light curve and of the effective temperature on the density distribution in a progenitor, its chemical composition, mass, radius, and explosion energy is studied. It is shown that, just before the supernova 1987 A outburst, the outside layers of the blue supergiant Sk-69.202 deg had a density distribution similar to that of the polytropic model with an index of n equals 3, a chemical composition with a mass fraction of hydrogen of the order of 0.1, and a relative helium abundance of about 0.9.

Utrobin, V. P.↗
NASA NTRS1990

Dissociation and recombination of positive holes in minerals

The formation mechanisms are described of positive holes - electronic defects in the O2 sublattice - with attention given to detecting the positive surface charge of minerals with these holes. Charge distribution analysis (CDA) is presented which measures dielectric polarization in an inhomogeneous field. CDA can be applied to the detection of the peroxide/superoxide functionality caused by positive holes on the surface. It is demonstrated with obsidian that the measurements provide data on O(-) mobility as a function of surface-charge carrier density and on O(-) generation as a function of temperature.

Freund, Friedemann↗