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At least 451 records · Page 25
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Colloquium : Planckian dissipation in metals

The appearance of the Planckian time $\tau$ Pl = ℏ/k B T is reviewed in both conventional and unconventional metals. A pedagogical discussion of the various different timescales (quasiparticle, transport, many-body) that characterize metals is given, with an emphasis on conditions under which these times are the same or different. Further, the possibility of a Planckian bound on dissipation is discussed from both a quasiparticle and a many-body perspective. Planckian quasiparticles can arise naturally from a combination of inelastic scattering and mass renormalization. Many-body dynamics, on the other hand, is constrained by the basic timescales and length scales of local thermalization.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Electronic and optical properties of transition metal impurities in GaN and AlN

The optical properties of Cr(III) impurities are well studied and exploited in 𝛼−Al 2 ⁢O 3 , which enables ruby lasers. Photoluminescence spectra resembling the famous 1.78 eV emission of Cr in 𝛼−Al 2 ⁢O 3 have been observed in other wide-band-gap host materials, in particular AlN. However, it is unclear whether Cr would produce the same emission in the nitrides as in 𝛼−Al 2 ⁢O 3 , especially given the different local environment (tetrahedral vs octahedral coordination). We investigate the electronic and optical properties of transition metal substitutional impurities (Cr, Co, Ni, and Cu) in wurtzite GaN and AlN from first principles, utilizing hybrid density functional theory. We calculate the optical transition energies using a constrained occupation approach that accounts for the multideterminant nature of the excited states. Our results indicate that substitutional Cr(III) is not responsible for the emission near 1.78 eV observed in the nitrides. Among the examined impurities, only substitutional Co(II) produces emission near 1.78 eV. Based on the favorable properties of Co(II) (low formation energy, small Huang-Rhys factor, and an 𝑆 = 3/2 ground state) we propose it as a promising single-photon emitter or spin qubit. We additionally assign the PL peak observed near 1.05 eV in GaN and AlN to the 2 𝐸→ 4 𝐴 2 transition of the Ni(III) substitution.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Data collection from crystals grown in microfluidic droplets

Protein crystals grown in microfluidic droplets have been shown to be an effective and robust platform for storage, transport and serial crystallography data collection with a minimal impact on diffraction quality. Single macromolecular microcrystals grown in nanolitre-sized droplets allow the very efficient use of protein samples and can produce large quantities of high-quality samples for data collection. However, there are challenges not only in growing crystals in microfluidic droplets, but also in delivering the droplets into X-ray beams, including the physical arrangement, beamline and timing constraints and ease of use. Here, the crystallization of two human gut microbial hydrolases in microfluidic droplets is described: a sample-transport and data-collection approach that is inexpensive, is convenient, requires small amounts of protein and is forgiving. It is shown that crystals can be grown in 50–500 pl droplets when the crystallization conditions are compatible with the droplet environment. Local and remote data-collection methods are described and it is shown that crystals grown in microfluidics droplets and housed as an emulsion in an Eppendorf tube can be shipped from the US to the UK using a FedEx envelope, and data can be collected successfully. Details of how crystals were delivered to the X-ray beam by depositing an emulsion of droplets onto a silicon fixed-target serial device are provided. After three months of storage at 4°C, the crystals endured and diffracted well, showing only a slight decrease in diffracting power, demonstrating a suitable way to grow crystals, and to store and collect the droplets with crystals for data collection. This sample-delivery and data-collection strategy allows crystal droplets to be shipped and set aside until beamtime is available.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2022

Differences in Printed Contacts Lead to Susceptibility of Silicon Cells to Series Resistance Degradation

Here, in this case study, we investigate a degradation mode occurring at the cell level in fielded multi-Si modules. The modules exhibit a mix of affected and unaffected cells. Affected cells show a progressive, series-resistance-related power degradation as shown via module- and cell-level IV curves, along with electroluminescence (EL) and PL imaging at the module, cell, and cell core sample scales. Scanning electron microscopy and energy-dispersive X-ray spectroscopy reveal a difference in the oxides in the silver paste used in screen printing of the gridline contacts. The paste in the affected cells is lead rich, whereas the paste in the unaffected cells is zinc rich. This suggests that the cells were screen printed with different silver paste compositions and possibly firing conditions, and that the different composition correlates with the susceptibility to degradation. Our results indicate degradation of the contact at the oxide-silver interface, causing a severe increase in series resistance across the cell that continues to progress over time.

14 SOLAR ENERGY↗
DOE OSTI2020

Optoelectronic Characterization of Emerging Solar Absorber Cu3AsS4

Enargite Cu 3 AsS 4 is a promising absorber for thin-film solar cells but little is known about its optoelectronic properties. Here, we present photoluminescence (PL) spectroscopy, time-resolved terahertz spectroscopy (TRTS), timeresolved photoluminescence (TRPL) spectroscopy, and cyclic voltammetry (CV) measurements of enargite thin films. The results indicate promising defect characteristics with minority carrier lifetimes on the order of ns, and band alignments suggest that buffer layers besides CdS must be developed to achieve high efficiency Cu 3 AsS 4 solar cells.

14 SOLAR ENERGY↗
DOE OSTI2020

Doping of CdTe Using CuCl2 Solution for Highly Efficient Photovoltaic Devices

Here, we report doping of cadmium telluride (CdTe) thin film solar cells using copper (II) chloride (CuCl 2 ) solution in deionized water. The CdTe thin films were immersed in 0.1 mmol CuCl 2 solution in water and annealed in the temperature range of 180-240 degrees C for various time durations. The devices were completed using thermally evaporated gold (Au) and measured under simulated AM1.5G spectrum. The average device efficiency of CuCl 2 treated CdTe devices increased to 13.7 % (best cell reaching 14.0%) with significant improvement on open-circuit voltage (VOC ) as compared with 12.4% (best cell 12.7%) for thermally evaporated Cu doped CdTe devices. For CuCl 2 treated CdTe devices, we found higher photoluminescence (PL) intensity and longer carrier life time at room temperature indicating solution based doping offers better control of Cu doping density as compared with evaporated Cu.

14 SOLAR ENERGY↗
DOE OSTI2021

Sonic Lift-off of GaAs-based Solar Cells with Reduced Surface Facets

Spalling has been proposed as a promising kerfless technique for slicing thin wafers and devices, enhancing the wafer yield from an ingot by reducing kerf-losses and enabling substrate reuse for the case of costly devices. The main challenge of spalling is to control the roughness and thickness variation of the spalled wafers that can be as high as 100% of the wafer thickness. Here, we have shown previously that the thickness variations are largely influenced by the interaction of the crack front with its own reflected waves. Herein we show that through Sonic Lift-off we can offer a modification to standard spalling technologies that minimizes the interaction of reflected waves with the crack front during lift-off of GaAs(100)-based solar cells. We show that the average surface facets amplitude can be reduced by 96% while obtaining a high quality bulk with no discernible residual strain as measured by PL. The resulting spalling depth can easily be tuned from 100 µm to less than 15µm. The electrical characterization of the Sonic lift-off cell shows no degradation of the VOC and a power conversion within 99% relative of a non-spalled baseline.

42 ENGINEERING↗
DOE OSTI2021

Differences in c-Si Solar Cell Metallization and Susceptibility to Series Resistance Degradation

In this case study, we investigate a degradation mode occurring at the cell level in fielded multi-Si modules. Affected cells in the module show a progressive, series-resistance-related power degradation observed in module- and cell-level IV curves along with EL and PL imaging at the module, cell, and cell core sample scale. SEM and elemental analysis via EDS reveal a difference in the oxides in the silver paste used in screen printing of the finger contacts. This suggests that the cells were screen printed with different silver paste compositions and possibly firing conditions. One of these combinations leads to degradation of the contact at the interface between the cell and contact finger, causing severe series resistance across the cell that continues to progress over time.

acetic acid↗
DOE OSTI2021

Numerical Simulations of Time-Resolved Photoluminescence in CdSexTe1-x/CdTe Solar Cells

We present initial time-resolved photoluminescence (TRPL) simulations in graded CdSexTe1-e thin-film solar cells to quantify the front-interface recombination velocity, S int,front . Our model includes several composition dependences: bandgap energy, absorption coefficient, electron affinity, and carrier lifetime. Cathodoluminescence spectrum imaging measurements on bevels provide an estimate of the bandgap and the CdSe x Te 1-x alloy composition through the absorber thickness. TRPL decays are simulated as a function of the laser power, S int,front , front-interface band offset, and bulk Shockley-Read-Hall lifetime. We find the impact of S intf,ront on the PL decay increases as the band offset shifts from a "spike" to a "cliff". Recombination rate analysis shows that back-interface recombination could potentially dictate the later part of the TRPL decay "t 2" in high-lifetime CdSe x Te 1-x cells. We briefly discuss ongoing work to determine TRPL measurement conditions that maximize sensitivity to S itnt,front.

CdTe solar cells↗
DOE OSTI2024

Diagnosis of PV Cell Passivation Degradation Resulting from Hot-Humid, High Voltage Potential Aging

Corrosion of the antireflective coating on the cell ("AR c corrosion") was previously observed in studies using hot-humid test conditions with external high voltage (HV) bias. Because AR c corrosion is not well understood, mini-modules (MiMos) were examined in a comparative experiment using PERC and PERT as well as legacy Al-BSF cells. For separate MiMos with the cell circuit electrical at +1500 V, -1500 V, or unbiased "V oc", test conditions in the comparative study included 60degrees C/60% RH for 96 h, as in IEC TS 62804-1; 70degrees C/70%RH for 200 h; and 85degrees C/85% RH for 200 h. Characterizations at each read point included: camera and electroluminescence (EL) imaging, colorimetry, and I-V curve tracing. Characterizations at the final read point included: SunsVoc; spatially mapping external quantum efficiency (EQE); high resolution: photoluminescence (PL), EL, and dark lock-in thermographic (DLIT) imaging. Forensics were performed on extracted cores, including scanning electron microscopy (SEM) with energy-dispersive X-ray spectroscopy (EDS) and scanning Auger microscopy (SAM). Forensics were also conducted on MiMos (stepped HV aging) and full-sized modules (outdoor aging) from previous studies. AR c corrosion was specifically observed for the glass/encapsulant/cell side of +1500 V (HV+) stressed MiMos, where appearance, color, and reflectance were the characteristics most distinguished relative to simultaneously occurring degradation modes. SEM/EDS and SAM identified conversion of silicon nitride to silicon oxide or hydrous silica, preferentially occurring at the edges and tips of the pyramidal textured cell surface.

aging↗
DOE OSTI2021

Information Leakage Analysis using a Co-design-Based Fault Injection Technique on a RISC-V Microprocessor

The RISC-V instruction set architecture open licensing policy has spawned a hive of development activity, making a range of implementations publicly available. The environments in which RISC-V operates have expanded correspondingly, driving the need for a generalized approach to evaluating the reliability of RISC-V implementations under adverse operating conditions or after normal wear-out periods. Fault injection (FI) refers to the process of changing the state of registers or wires, either permanently or momentarily, and then observing execution behavior. The analysis provides insight into the development of countermeasures that protect against the leakage or corruption of sensitive information which might occur because of unexpected execution behavior. In this paper, we develop a hardware-software co-design architecture that enables fast, configurable fault emulation and utilize it for information leakage and data corruption analysis. Modern System-on-chip FPGAs enable building an evaluation platform where control elements run on a processor(s) (PS) simultaneously with the target design running in the programmable logic (PL). Software components of the FI system introduce faults and report execution behavior. A pair of RISC-V FI-instrumented implementations are created and configured to execute the Advanced Encryption Standard and Twister algorithms. Key and plaintext information leakage and degraded pseudo-random sequences are both observed in the output for a subset of the emulated faults.

42 ENGINEERING↗
DOE OSTI2020

Multi-Agent Safe Policy Learning for Power Management of Networked Microgrids

This paper presents a supervised multi-agent safe policy learning (SMAS-PL) method for optimal power management of networked microgrids (MGs) in distribution systems. While unconstrained reinforcement learning (RL) algorithms are black-box decision models that could fail to satisfy grid operational constraints, our proposed method considers AC power flow equations and other operational limits. Accordingly, the training process employs the gradient information of operational constraints to ensure that the optimal control policy functions generate safe and feasible decisions. Furthermore, we have developed a distributed consensus-based optimization approach to train the agents’ policy functions while maintaining MGs’ privacy and data ownership boundaries. After training, the learned optimal policy functions can be safely used by the MGs to dispatch their local resources, without the need to solve a complex optimization problem from scratch. Lastly, numerical experiments have been devised to verify the performance of the proposed method.

, policy gradient↗
DOE OSTI2022

Optimization of InGaN quantum well interfaces for fast interwell carrier transport and low nonradiative recombination

Efficient high-power operation of light emitting diodes based on InGaN quantum wells (QWs) requires rapid interwell hole transport and low nonradiative recombination. The transport rate can be increased by replacing GaN barriers with that of InGaN. Introduction of InGaN barriers, however, increases the rate of the nonradiative recombination. In this work, we have attempted to reduce the negative impact of the nonradiative recombination by introducing thin GaN or AlGaN interlayers at the QW/barrier interfaces. The interlayers, indeed, reduce the nonradiative recombination rate and increase the internal quantum efficiency by about 10%. Here, the interlayers do not substantially slow down the interwell hole transport; for 0.5 nm Al 0.10 Ga 0.90 N interlayers the transport rate has even been found to increase. Another positive feature of the interlayers is narrowing of the QW PL linewidth, which is attributed to smoother QW interfaces and reduced fluctuations of the QW width.

carrier transport↗
DOE OSTI2023

In situ amplification of spin echoes within a kinetic inductance parametric amplifier

The use of superconducting microresonators together with quantum-limited Josephson parametric amplifiers has enhanced the sensitivity of pulsed electron spin resonance (ESR) measurements by more than four orders of magnitude. So far, the microwave resonators and amplifiers have been designed as separate components due to the incompatibility of Josephson junction–based devices with magnetic fields. This has produced complex spectrometers and raised technical barriers toward adoption of the technique. Here, we circumvent this issue by coupling an ensemble of spins directly to a weakly nonlinear and magnetic field–resilient superconducting microwave resonator. We perform pulsed ESR measurements with a 1-pL mode volume containing 6 × 10 7 spins and amplify the resulting signals within the device. When considering only those spins that contribute to the detected signals, we find a sensitivity of 2.8 x 10 3 spins / $\sqrt{Hz}$ for a Hahn echo sequence at a temperature of 400 mK. In situ amplification is demonstrated at fields up to 254 mT, highlighting the technique’s potential for application under conventional ESR operating conditions.

42 ENGINEERING↗
DOE OSTI2024

General algorithm for characterization of donor-acceptor pair recombination processes in solid-state materials

Radiative recombination processes can occur in solid-state systems through the pairing of donor and acceptor defects of the lattice. Recently, donor-acceptor pairs (DAP) have been proposed as promising candidates for quantum applications, and their signature has been observed in emerging low-dimensional materials. Therefore, the identification of such processes is gaining interest and requires methods to efficiently and reliably characterize them. Here, we introduce a general algorithm to identify DAP processes starting from the experimental photoluminescence (PL) emission spectrum and basic material parameters, including the lattice structure and dielectric constant. The algorithm recognizes possible DAP transitions from the emission pattern in the spectrum and returns the characteristic energy of the DAP transition and the separation between the donor and acceptor sites. By testing the algorithm on the photoluminescence spectrum of hexagonal boron nitride (hBN), we show that our method is robust against experimental errors and adds new capabilities to the investigation toolbox of semiconductors and their optical properties.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Localized exciton emission from monolayer WS 2 nanoribbon at cryogenic temperature

Abstract We conducted low-temperature photoluminescence (PL) spectroscopy experiments on individual WS 2 and MoSe 2 nanoribbons prepared by gold-assisted exfoliation from the slanted surface of bulk crystals with a vicinal and stepwise pattern. The nanoribbons are predominantly monolayer and have widths varying from hundreds of nanometers down to tens of nanometers. Most MoSe 2 NRs display an emission profile similar to 2D excitons of MoSe 2 monolayers. In contrast, WS 2 nanoribbons are characterized with sharp emission peaks that can be attributed to the emission from localized excitons or trions. Moreover a broad low energy emission peak can be also observed from some of the WS 2 nanoribbons, which originates from bilayer regions. In this manuscript, we analyze spectral diffusion behavior along with pump power and temperature dependence of the localized exciton emission peaks, shedding light on potential of TMDC nanoribbons in sensing and opto-electronic applications.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Phase transition dynamics in one-dimensional halide perovskite crystals

Triiodide perovskites CsPbI 3 , CsSnI 3 , and FAPbI 3 (where FA is formamidinium) are highly promising materials for a range of optoelectronic applications in energy conversion. However, they are thermodynamically unstable at room temperature, preferring to form low-temperature (low-T) non-perovskite phases with one-dimensional anisotropic crystal structures. While such thermodynamic behavior represents a major obstacle toward realizing high-performance devices based on their high-temperature (high-T) perovskite phases, the underlying phase transition dynamics are still not well understood. In this work, we use in situ optical micro-spectroscopy to quantitatively study the transition from the low-T to high-T phases in individual CsSnI 3 and FAPbI 3 nanowires. We reveal a large blueshift in the photoluminescence (PL) peak (~38 meV) at the low-T/high-T two-phase interface of partially transitioned FAPbI 3 wire, which may result from the lattice distortion at the phase boundary. Compared to the experimentally derived activation energy of CsSnI 3 (~1.93 eV), the activation energy of FAPbI 3 is relatively small (~0.84 eV), indicating a lower kinetic energy barrier when transitioning from a face-sharing octahedral configuration to a corner-sharing one. Further, the phase propagation rate in CsSnI 3 is observed to be relatively high, which may be attributed to a high concentration of Sn vacancies. Our results could not only facilitate a deeper understanding of phase transition dynamics in halide perovskites with anisotropic crystal structures, but also enable controllable manipulation of optoelectronic properties via local phase engineering.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Phase transition dynamics in one-dimensional halide perovskite crystals

Triiodide perovskites CsPbI 3 , CsSnI 3 , and FAPbI 3 (where FA is formamidinium) are highly promising materials for a range of optoelectronic applications in energy conversion. However, they are thermodynamically unstable at room temperature, preferring to form low-temperature (low-T) non-perovskite phases with one-dimensional anisotropic crystal structures. While such thermodynamic behavior represents a major obstacle toward realizing high-performance devices based on their high-temperature (high-T) perovskite phases, the underlying phase transition dynamics are still not well understood. Here we use in situ optical micro-spectroscopy to quantitatively study the transition from the low-T to high-T phases in individual CsSnI 3 and FAPbI 3 nanowires. We reveal a large blueshift in the photoluminescence (PL) peak (~38 meV) at the low-T/high-T two-phase interface of partially transitioned FAPbI 3 wire, which may result from the lattice distortion at the phase boundary. Compared to the experimentally derived activation energy of CsSnI 3 (~1.93 eV), the activation energy of FAPbI 3 is relatively small (~0.84 eV), indicating a lower kinetic energy barrier when transitioning from a face-sharing octahedral configuration to a corner-sharing one. Further, the phase propagation rate in CsSnI 3 is observed to be relatively high, which may be attributed to a high concentration of Sn vacancies. Furthermore, our results could not only facilitate a deeper understanding of phase transition dynamics in halide perovskites with anisotropic crystal structures, but also enable controllable manipulation of optoelectronic properties via local phase engineering.

36 MATERIALS SCIENCE↗