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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 451 records · Page 25
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Isotope analysis of diamond-surface passivation effect of high-temperature H{sub 2}O-grown atomic layer deposition-Al{sub 2}O{sub 3} films

The Al{sub 2}O{sub 3} film formed using an atomic layer deposition (ALD) method with trimethylaluminum as Al precursor and H{sub 2}O as oxidant at a high temperature (450 °C) effectively passivates the p-type surface conduction (SC) layer specific to a hydrogen-terminated diamond surface, leading to a successful operation of diamond SC field-effect transistors at 400 °C. In order to investigate this excellent passivation effect, we carried out an isotope analysis using D{sub 2}O instead of H{sub 2}O in the ALD and found that the Al{sub 2}O{sub 3} film formed at a conventional temperature (100 °C) incorporates 50 times more CH{sub 3} groups than the high-temperature film. This CH{sub 3} is supposed to dissociate from the film when heated afterwards at a higher temperature (550 °C) and causes peeling patterns on the H-terminated surface. The high-temperature film is free from this problem and has the largest mass density and dielectric constant among those investigated in this study. The isotope analysis also unveiled a relatively active H-exchange reaction between the diamond H-termination and H{sub 2}O oxidant during the high-temperature ALD, the SC still being kept intact. This dynamic and yet steady H termination is realized by the suppressed oxidation due to the endothermic reaction with H{sub 2}O. Additionally, we not only observed the kinetic isotope effect in the form of reduced growth rate of D{sub 2}O-oxidant ALD but found that the mass density and dielectric constant of D{sub 2}O-grown Al{sub 2}O{sub 3} films are smaller than those of H{sub 2}O-grown films. This is a new type of isotope effect, which is not caused by the presence of isotopes in the films unlike the traditional isotope effects that originate from the presence of isotopes itself. Hence, the high-temperature ALD is very effective in forming Al{sub 2}O{sub 3} films as a passivation and/or gate-insulation layer of high-temperature-operation diamond SC devices, and the knowledge of the aforementioned new isotope effect will be a basis for further enhancing ALD technologies in general.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Influence of deposition temperature of thermal ALD deposited Al{sub 2}O{sub 3} films on silicon surface passivation

The effect of deposition temperature (T{sub dep}) and subsequent annealing time (t{sub anl}) of atomic layer deposited aluminum oxide (Al{sub 2}O3) films on silicon surface passivation (in terms of surface recombination velocity, SRV) is investigated. The pristine samples (as-deposited) show presence of positive fixed charges, Q{sub F}. The interface defect density (D{sub it}) decreases with increase in T{sub dep} which further decreases with t{sub anl} up to 100s. An effective surface passivation (SRV<8 cm/s) is realized for T{sub dep} ≥ 200 °C. The present investigation suggests that low thermal budget processing provides the same quality of passivation as realized by high thermal budget process (t{sub anl} between 10 to 30 min)

36 MATERIALS SCIENCE↗
DOE OSTI2015

Passivating boron silicate glasses for co-diffused high-efficiency n-type silicon solar cell application

Doping layers commonly have but one function: supplying the dopants to form a doped region within a substrate. This work presents B doping layers/stacks, which at the same time supply dopant atoms, passivate the B-doped crystalline Si surface sufficiently well (j{sub 0E} < 50 fA/cm{sup 2}), and show optical properties suitable for anti-reflective coating. Furthermore, these boron silicate glasses can act as a barrier against parasitic P in-diffusion during a co-diffusion step. The boron emitters diffused from the inductively coupled plasma plasma-enhanced chemical vapor-deposited B containing SiO{sub x} layers are investigated and optimized concerning passivation quality and contact properties for high-efficiency n-type solar Si cell designs. It is shown that even 10 nm thin SiO{sub x}:B films already allow for suitable emitter sheet resistance for screen-printed contacts. Furthermore, SiO{sub x}:B layers presented here allow for iV{sub OC} values of 675 mV and contact resistivity of 1 mΩcm{sup 2} for commercial Ag instead of Ag/Al pastes on the diffused boron emitter passivated with the SiO{sub x}:B layer supporting the contact formation. All of these properties can be achieved within one single B doping layer/stack.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Proposal of leak path passivation for InGaN solar cells to reduce the leakage current

We propose some general ways to passivate the leak paths in InGaN solar cells and report some experimental evidences of its effectiveness. By adopting an AlOx passivation process, the photovoltaic performances of GaN pn-junctions and InGaN solar cells, grown by molecular beam epitaxy, have been significantly improved. The open circuit voltage under 1 sun illumination increases from 1.46 to 2.26 V for a GaN pn junction, and from 0.95 to 1.27 V for an InGaN solar cell, demonstrating evidence of leak path passivation (LPP) by AlOx. The proposed LPP is expected to be a realistic way to exploit the potential of thick and relaxed but defective InGaN for solar cell applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Understanding the charge transport mechanisms through ultrathin SiO x layers in passivated contacts for high-efficiency silicon solar cells

We report on the microscopic structure of the SiO x layer and the transport mechanism in polycrystalline Si (poly-Si) passivated contacts, which enable high-efficiency crystalline Si (c-Si) solar cells. Using electron beam induced current (EBIC) measurements, we accurately map nanoscale conduction-enabling pinholes in 2.2 nm thick SiOx layers in a poly-Si/SiO x /c-Si stack. These conduction enabling pinholes appear as bright spots in EBIC maps due to carrier transport and collection limitations introduced by the insulating 2.2 nm SiO x layer. Performing high-resolution transmission electron microscopy at a bright spot identified with EBIC reveals that conduction pinholes in SiO x can be regions of thin tunneling SiO x rather than a geometric pinhole. Additionally, selectively etching the underlying poly-Si layer in contacts with 1.5 and 2.2 nm thick SiO x layers using tetramethylammonium hydroxide results in pinhole-like etch features in both contacts. However, EBIC measurements for a contact with a thinner, 1.5 nm SiO x layer do not reveal pinholes, which is consistent with uniform tunneling transport through the 1.5 nm SiO x layer. Finally, we theoretically show that reducing the metal to the c-Si contact size from microns, like in the p-type passivated emitter rear contact, to tens of nanometers, like in poly-Si contacts, allows lowering of the unpassivated contact area by several orders of magnitude, thus resulting in excellent passivation, as has been demonstrated for these contacts.

14 SOLAR ENERGY↗
DOE OSTI2025

Characterization of dangling bond defects at the crystalline Si/SiO x interface in a polycrystalline Si passivating contact solar cell at room temperature with electrically detected magnetic resonance spectroscopy

Monocrystalline silicon solar cells can achieve photoconversion efficiencies exceeding 26%; however, performance-limiting defects that trap carriers continue to be a challenge. In this work, we have characterized Si solar cells with tunneling SiO x /polycrystalline-Si (poly-Si) passivating contacts (TOPCon) on As-doped Czochralski Si wafers with electrically detected magnetic resonance (EDMR) spectroscopy. We fabricated 2 × 20 mm 2 TOPCon-like mini solar cells with edge passivation alongside larger 4 cm 2 sister cells and obtained similar device characteristics. We performed EDMR spectroscopy at 300 K on two minicells with different degrees of surface passivation based on the recombination parameter, J o , values of 40 and 310 fA/cm2. We optimized the resolution and the signal-to-noise ratio of the EDMR response of the minicells by varying the forward bias voltage and the magnetic field modulation amplitude. We detect two distinct signals with EDMR spectroscopy, an axial-like signal at g = 2.009, 2.0087, and 2.0015, and an isotropic signal at g = 2.0024, which we attribute to Si dangling bonds (P b0 and P b centers) and boron–oxygen related defects, respectively, at or near the c-Si/SiO x interface. The EDMR signals were lower for the cell with a lower value of J o , while the ratio of the two defect populations was very similar. The EDMR signal increases with forward bias but drops to zero at bias voltages >0.5 V, consistent with interface defects within or near the boron-doped emitter depletion region. Our study demonstrates a method to fabricate minicells that can be characterized with EDMR spectroscopy to detect industrially relevant defects in TOPCon cells.

14 SOLAR ENERGY↗
DOE OSTI2019

Multiscale porous elastomer substrates for multifunctional on-skin electronics with passive-cooling capabilities

In addition to mechanical compliance, achieving the full potential of on-skin electronics needs the introduction of other features. For example, substantial progress has been achieved in creating biodegradable, self-healing, or breathable, on-skin electronics. However, the research of making on-skin electronics with passive-cooling capabilities, which can reduce energy consumption and improve user comfort, is still rare. Herein, we report the development of multifunctional on-skin electronics, which can passively cool human bodies without needing any energy consumption. This property is inherited from multiscale porous polystyrene-block-poly(ethylene-ran-butylene)-block-polystyrene (SEBS) supporting substrates. The multiscale pores of SEBS substrates, with characteristic sizes ranging from around 0.2 to 7 µm, can effectively backscatter sunlight to minimize heat absorption but are too small to reflect human-body midinfrared radiation to retain heat dissipation, thereby delivering around 6 °C cooling effects under a solar intensity of 840 W∙m -2 . Other desired properties, rooted in multiscale porous SEBS substrates, include high breathability and outstanding waterproofing. The proof-of-concept bioelectronic devices include electrophysiological sensors, temperature sensors, hydration sensors, pressure sensors, and electrical stimulators, which are made via spray printing of silver nanowires on multiscale porous SEBS substrates. The devices show comparable electrical performances with conventional, rigid, nonporous ones. Also, their applications in cuffless blood pressure measurement, interactive virtual reality, and human–machine interface are demonstrated. Notably, the enabled on-skin devices are dissolvable in several organic solvents and can be recycled to reduce electronic waste and manufacturing cost. Such on-skin electronics can serve as the basis for future multifunctional smart textiles with passive-cooling functionalities.

42 ENGINEERING↗
DOE OSTI2017

Impact of Active Control on Passive Safety Response Characteristics of Sodium-cooled Fast Reactors: I - Theoretical background

Here, the interaction of the active control system with passive safety behavior is investigated for sodium-cooled fast reactors. A claim often made of advanced reactors is that they are passively safe against unprotected upset events. In practice, such upset events are not analyzed in the context of the plant control system, but rather the analyses are performed without considering the normally programmed response of the control system (open-loop approach). This represents an oversimplification of the safety case. The issue of passive safety override arises since the control system commands actuators whose motions have safety consequences. Depending on the upset involving the control system ( operator error, active control system failure, or inadvertent control system override), an actuator does not necessarily go in the same direction as needed for safety. So neglecting to account for control system action during an unprotected upset is nonconservative from a safety standpoint. It is important then, during the design of the plant, to consider the potential for the control system to work against the inherent and safe regulating effects of purposefully engineered temperature feedbacks.

21 SPECIFIC NUCLEAR REACTORS AND ASSOCIATED PLANTS↗
DOE OSTI2017

Impact of Active Control on Passive Safety Response Characteristics of Sodium-Cooled Fast Reactors: II-Model Implementation and Simulations

Advanced reactors are often claimed to be passively safe against unprotected upset events. In common practice, these events are not considered in the context of the plant control system, i.e., the reactor is subjected to classes of unprotected upset events while the normally programmed response of the control system is assumed not to be present. However, this approach constitutes an oversimplification since, depending on the upset involving the control system, an actuator does not necessarily go in the same direction as needed for safety. In this work, dynamic simulations are performed to assess the degree to which the inherent self-regulating plant response is safe from active control system override. The simulations are meant to characterize the resilience of the plant to unprotected initiators. The initiators were represented and modeled as an actuator going to a hard limit. Consideration of failure is further limited to individual controllers as there is no cross-connect of signals between these controllers. The potential for passive safety override by the control system is then relegated to the single-input single-output controllers. Here, the results show that when the plant control system is designed by taking into account and quantifying the impact of the plant control system on accidental scenarios there is very limited opportunity for the preprogrammed response of the control system to override passive safety protection in the event of an unprotected initiator.

21 SPECIFIC NUCLEAR REACTORS AND ASSOCIATED PLANTS↗
DOE OSTI2025

Optimization of passive superconductors for shaping stellarator magnetic fields

Here, we consider the problem of optimizing a set of passive superconducting coils (PSCs) with currents induced by a background magnetic field rather than power supplies. In the nuclear fusion literature, such coils have been proposed to partially produce the 3D magnetic fields for stellarators and provide passive stabilization. We perform the first optimizations of PSC arrays with respect to the orientation, shape, and location of each coil, jointly minimized with the background fields. We conclude by generating passive coil array solutions for four stellarators.

coil optimization↗
DOE OSTI2021

Imaging CdCl 2 defect passivation and formation in polycrystalline CdTe films by cathodoluminescence

Polycrystalline thin-film solar cells are attractive for low-cost photovoltaics, but their efficiencies are hindered by material quality issues. State-of-the-art CdTe solar cells use CdCl 2 annealing treatments whose effects are still being discovered at a fundamental level. Here, a series of CdTe samples with different annealing temperatures is investigated with high-resolution hyperspectral cathodoluminescence mapping measured at both room temperature and low temperature on the same microscopic areas. A statistical analysis over a large number of grains is combined with a local analysis at grain boundaries. The results elucidate the dynamic interplay between grain boundary and intragrain defect passivation and formation, in the midst of grain growth. The CdCl 2 annealing initially contributes to an increase of the grain size and the passivation of both grain boundaries and grain interiors, increasing the overall luminescence and diffusion length. For higher annealing temperatures, a further increase of grain size is counterbalanced by the rise of bulk defects. The results illustrate the tradeoffs that lead to an optimal annealing temperature, as well as new methods for understanding defect passivation and creation in thin film solar cells.

14 SOLAR ENERGY↗
DOE OSTI2017

Gallium-Doped Poly-Si:Ga/SiO 2 Passivated Emitters to n-Cz Wafers With iV oc >730 mV

Here, we form gallium-doped poly-Si:Ga/SiO 2 passivated contacts on n-type Czochralski (n-Cz) wafers using ion implantation of Ga and Ga-containing spin-on dopants. After annealing and passivation with Al 2 O 3 , the contacts exhibit i Voc values of >730 mV with corresponding Joe values of <5 fA/cm 2 . These are among the best-reported values for p-type poly-Si/SiO 2 contacts. Secondary ion mass spectroscopic depth profile data show that, in contrast to B, Ga does not pileup at the SiO 2 interface in agreement with its known high diffusivity in SiO 2 . This lack of Ga pileup may imply fewer dopant-related defects in the SiO 2 , compared with B dopants, and account for the excellent passivation.

14 SOLAR ENERGY↗
DOE OSTI2025

High-Throughput In-Line Deposition of Silicon Oxide for Polycrystalline Silicon Passivating Contacts

Polycrystalline silicon passivating contacts rely on an ultrathin (1–2 nm) silicon oxide layer to minimize recombination at the wafer/oxide interface and regulate dopant diffusion. Traditionally formed by thermal or chemical oxidation, this oxide is herein replaced by silicon oxide deposited via aerosol impact-driven assembly (AIDA), enabling high wafer-per-hour throughput and precise thickness control. In this study, we show that AIDA coatings conformally cover planar or textured substrates and achieve a SiO x /poly-Si(n) structure with an implied open-circuit voltage (iV oc = 726 mV) and contact saturation current density (J 0 = 8.8 fA/cm 2 ). Furthermore, annealing AIDA SiO x films at elevated temperatures desorbs hydroxyl groups while the stoichiometry transitions toward SiO 2 , improving passivation quality. Together, these results highlight AIDA’s potential for scalable, high-throughput manufacturing of advanced passivating contacts, offering a cost-effective alternative to conventional low-pressure chemical vapor deposition and plasma-enhanced chemical vapor deposition-based silicon and oxide processes.

TOPcon↗
DOE OSTI2016

Plasma Immersion Ion Implantation for Interdigitated Back Passivated Contact (IBPC) Solar Cells

We present progress to develop low-cost interdigitated back contact solar cells with pc-Si/SiO2/c-Si passivated contacts formed by plasma immersion ion implantation (PIII). PIII is a lower-cost implantation technique than traditional beam-line implantation due to its simpler design, lower operating costs, and ability to run high doses (1E14-1E18 cm-2) at low ion energies (20 eV-10 keV). These benefits make PIII ideal for high throughput production of patterned passivated contacts, where high-dose, low-energy implantations are made into thin (20-200 nm) a-Si layers instead of into the wafer itself. For this work symmetric passivated contact test structures grown on n-Cz wafers with PH3 PIII doping gave implied open circuit voltage (iVoc) values of 730 mV with Jo values of 2 fA/cm2. Samples doped with B2H6 gave iVoc values of 690 mV and Jo values of 24 fA/cm2, outperforming BF3 doping, which gave iVoc values in the 660-680 mV range. Samples were further characterized by photoluminescence and SIMS depth profiles. Initial IBPC cell results are presented.

14 SOLAR ENERGY↗
DOE OSTI2018

Dopant Patterning by PECVD and Mechanical Masking for Passivated Tunneling Contact IBC Cell Architectures

We present a robust, simple technique for dopant patterning onto poly-Si/SiO 2 passivated tunneling contacts on nCz wafers. Heavily doped, thin nand ptype a-Si:H overlayers serve as solid-state dopant sources for blanket intrinsic a-Si:H layer on tunneling SiO 2 . Subsequent processing results in uniformly doped, functional n- and p-type passivated contacts. Furthermore, physical masking during the PECVD of the dopant source overlayers enables an interdigitated back contact (IBC) cell structure with sufficient doped finger edge fidelity to preserve an intrinsic electrode gap. Lithography-free, passivated contact IBC cell structures are made using a set of n-, p-, and metallization masks from patterned Si wafers with mechanical alignment. Alternatively, doped a-Si:H overlayers are patterned by dielectric layer deposition and lithography.

14 SOLAR ENERGY↗
DOE OSTI2020

Luminescence from Poly-Si Films and its Application to Study Passivating-Contact Solar Cells

In recent years, polycrystalline silicon (poly-Si) based passivating-contact solar cells have received tremendous attention from the solar research community due to its excellent surface passivation and high carrier conductivity. However, the poly-Si films are not transparent to all wavelengths of the solar spectrum. There is often some parasitic absorption in these films. From a different standpoint, as they absorb some light, they can luminesce. This phenomenon provides us with unique opportunities to investigate optoelectronic properties of the films in a fast, contactless, and nondestructive manner. In this work, we report the luminescence phenomenon from poly-Si films used in passivating-contact solar cells. We then utilize this phenomenon to report a range of applications for solar cells including studies of carrier transport behaviors and hydrogenation inside the films.

14 SOLAR ENERGY↗
DOE OSTI2015

Effect of the length of ligands passivating quantum dots on the electrooptical characteristics of organic light-emitting diodes

The electrooptical characteristics of organic light-emitting diodes with quantum dots passivated with organic ligands of different lengths as emitting centers are investigated. It is established that the thickness of the ligand coating covering the quantum dots has little effect on the Förster energy transfer in the diodes, but significantly affects the direct injection of charge carriers into the quantum-dot layer. It is shown that the thickness of the passivation coating covering the quantum dots in a close-packed nanoparticle layer is deter- mined both by the length of passivating ligands and the degree of quantum-dot coverage with ligands.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Passive Seismic Emission Tomography Results at San Emidio Nevada

The utility of passive seismic emission tomography for mapping geothermal permeability has been tested at San Emidio in Nevada. The San Emidio study area overlaps a geothermal field in production since 1987 and another resource to the south of the production field. Passive seismic data collections were completed at San Emidio in late 2016 by Microseismic Inc as part of a DOE project. The PSET results are being analyzed as part of the WHOLESCALE project. This submission includes P-wave velocity model data, and the passive seismic data with more information on each bellow.

15 GEOTHERMAL ENERGY↗