Characteristics of tunneling p-n junctions
Current-voltage characteristics of tunneling p-n junctions in semiconductors
SEARCH · Engineering Papers
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Current-voltage characteristics of tunneling p-n junctions in semiconductors
Calculation of lifetime and transition probability of p-excited states of neon, argon, and krypton
P and S travel time anomalies interpreted using Jeffreys-Bullen tables
IR absorption bands due to localized vibrational modes of lithium and P impurities in germanium at liquid-nitrogen temperature
P-i-n photodiodes incident quantum efficiency and apparent noise input power measurements, considering astronomical photometry applications
Spectroscopic factor dependence of revised model for deuteron stripping in /d, p/ reactions, noting scattering cross section role
Radiation effects on lithium p on n solar cells
Simulated lunar module static reflectivity data for site P-2-6
Performance and stall limits of YTF30-P-1 turbofan engine with uniform compressor inlet flow
Digital subsystem design and development employing n-channel and p-channel in MOS FET units in complimentary circuits in integrated circuit array
Effects of nickel on performance of n on p silicon solar cells
L super P stability conditions for nonlinear time varying feedback systems derived with transformation technique and small gain theorem
Crater distribution and population curves for Surveyor 1 vicinity, discussing Flamsteed P ring floor characteristics
Vapor phase deposition process forms a heavily doped n-region on a melt-grown p-type gallium antimonide substrate. HCl transports gallium to the reaction zone, where it combines with antimony hydride and the dopant carrier, hydrogen telluride. Temperatures as low as 400 degrees C are required.
Spectral results of p- and n-type silicon and germanium
Black body responsivity data of n-type and p-type silicon
Reaction cross sections of Si/n,p/ and Si/n,alpha/ at 14.5 MeV neutron energy