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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 451 records · Page 25
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Semianalytical quantum model for graphene field-effect transistors

We develop a semianalytical model for monolayer graphene field-effect transistors in the ballistic limit. Two types of devices are considered: in the first device, the source and drain regions are doped by charge transfer with Schottky contacts, while, in the second device, the source and drain regions are doped electrostatically by a back gate. The model captures two important effects that influence the operation of both devices: (i) the finite density of states in the source and drain regions, which limits the number of states available for transport and can be responsible for negative output differential resistance effects, and (ii) quantum tunneling across the potential steps at the source-channel and drain-channel interfaces. By comparison with a self-consistent non-equilibrium Green's function solver, we show that our model provides very accurate results for both types of devices, in the bias region of quasi-saturation as well as in that of negative differential resistance.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Fabrication and characterization of p-channel Si double quantum dots

Lithographically defined p-channel Si single hole transistors (SHTs) and double quantum dot (DQD) devices are fabricated and characterized. Coulomb oscillations are clearly evident at a temperature of 4.2 K. The charging energy and the diameter of the SHT are estimated from the Coulomb diamonds. Honeycomb-like charge stability diagrams are observed from measurements of the DQD devices. Single hole transitions through the DQD are detected using an integrated SHT as a charge sensor, and a few-hole regime of the DQD is observed.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Single atom impurity in a single molecular transistor

The influence of an impurity atom on the electrostatic behaviour of a Single Molecular Transistor was investigated through Ab-initio calculations in a double-gated geometry. The charge stability diagram carries unique signature of the position of the impurity atom in such devices which together with the charging energy of the molecule could be utilised as an electronic fingerprint for the detection of such impurity states in a nano-electronic device. The two gated geometry allows additional control over the electrostatics as can be seen from the total energy surfaces (for a specific charge state), which is sensitive to the positions of the impurity. These devices which are operational at room temperature can provide significant advantages over the conventional silicon based single dopant devices functional at low temperature. The present approach could be a very powerful tool for the detection and control of individual impurity atoms in a single molecular device and for applications in future molecular electronics.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Direct observation of both contact and remote oxygen scavenging of GeO{sub 2} in a metal-oxide-semiconductor stack

In the path to incorporating Ge based metal-oxide-semiconductor into modern nano-electronics, one of the main issues is the oxide-semiconductor interface quality. Here, the reactivity of Ti on Ge stacks and the scavenging effect of Ti were studied using synchrotron X-ray photoelectron spectroscopy measurements, with an in-situ metal deposition and high resolution transmission electron microscopy imaging. Oxygen removal from the Ge surface was observed both in direct contact as well as remotely through an Al{sub 2}O{sub 3} layer. The scavenging effect was studied in situ at room temperature and after annealing. We find that the reactivity of Ti can be utilized for improved scaling of Ge based devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Fabrication and characterization of an undoped GaAs/AlGaAs quantum dot device

We demonstrate the development of a double quantum dot with an integrated charge sensor fabricated in undoped GaAs/AlGaAs heterostructures using a double top-gated design. Based on the evaluation of the integrated charge sensor, the double quantum dot can be tuned to a few-electron region. Additionally, the inter-dot coupling of the double quantum dot can be tuned to a large extent according to the voltage on the middle gate. The quantum dot is shown to be tunable from a single dot to a well-isolated double dot. To assess the stability of such design, the potential fluctuation induced by 1/f noise was measured. Based on the findings herein, the quantum dot design developed in the undoped GaAs/AlGaAs semiconductor shows potential for the future exploitation of nano-devices.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2015

Conduction of molecular electronic devices: Qualitative insights through atom-atom polarizabilities

The atom-atom polarizability and the transmission probability at the Fermi level, as obtained through the source-and-sink-potential method for every possible configuration of contacts simultaneously, are compared for polycyclic aromatic compounds. This comparison leads to the conjecture that a positive atom-atom polarizability is a necessary condition for transmission to take place in alternant hydrocarbons without non-bonding orbitals and that the relative transmission probability for different configurations of the contacts can be predicted by analyzing the corresponding atom-atom polarizability. A theoretical link between the two considered properties is derived, leading to a mathematical explanation for the observed trends for transmission based on the atom-atom polarizability.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Current-driven vortex domain wall motion in wire-tube nanostructures

We have investigated the current-driven domain wall motion in nanostructures comprised of a pair of nanotube and nanowire segments. Under certain values of external magnetic fields, it is possible to pin a vortex domain wall in the transition zone between the wire and tube segments. We explored the behavior of this domain wall under the action of an electron flow applied in the opposite direction to the magnetic field. Thus, for a fixed magnetic field, it is possible to release a domain wall pinned simply by increasing the intensity of the current density, or conversely, for a fixed current density, it is possible to release the domain wall simply decreasing the magnetic external field. When the domain wall remains pinned due to the competition between the current density and the magnetic external field, it exhibits a oscillation frequency close to 8 GHz. The amplitude of the oscillations increases with the current density and decreases over time. On the other hand, when the domain wall is released and propagated through the tube segment, this shows the standard separation between a steady and a precessional regime. The ability to pin and release a domain wall by varying the geometric parameters, the current density, or the magnetic field transforms these wire-tube nanostructures in an interesting alternative as an on/off switch nano-transistor.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2015

Hydrogen accumulation as the origin of delamination at the a-carbon/SiO{sub 2} interface

This work reports the characterization of the interface amorphous carbon (a-C)/SiO{sub 2} by neutron and X-ray reflectometry. Neutrons have shown the existence of an intermediate layer (IL) between the a-C and the SiO{sub 2} layers that was not evidenced by XRR. This IL has been associated with the accumulation of H inside the SiO{sub 2} layer near the interface with the a-C. The characteristics of this layer, in particular, its H-concentration and thickness, seem to be correlated with the weakness of this interface. A plot of the molecular weight as a function of the mass density for the SiO{sub 2} and the IL layers graphically demonstrates the risk of delamination of each sample. The combination of NR and XRR is shown to be a powerful technique in the characterization of layers and interfaces used in the micro/nanoelectronics industry. The same approach can be extended to other interfaces of interest involving hydrogen.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Intrinsic space charge layers and field enhancement in ferroelectric nanojunctions

Conducting characteristics of topological defects in ferroelectric materials, such as charged domain walls, engendered a broad interest on their scientific merit and the possibility of novel applications utilizing domain engineering. At the same time, the problem of electron transport in ferroelectrics still remains full of unanswered questions and becomes yet more relevant over the growing interest in ferroelectric semiconductors and new improper ferroelectric materials. We have employed self-consistent phase-field modeling to investigate the physical properties of a local metal-ferroelectric (Pb(Zr{sub 0.2}Ti{sub 0.8})O{sub 3}) junction in applied electric field. We revealed an up to 10-fold local enhancement of electric field realized by large polarization gradient and over-polarization effects due to inherent non-linear dielectric properties of Pb(Zr{sub 0.2}Ti{sub 0.8})O{sub 3}. The effect is independent of bias polarity and maintains its strength prior, during and after ferroelectric switching. The observed field enhancement can be considered on similar grounds as increased doping level, giving rise to reduced switching bias and threshold voltages for charge injection, electrochemical and photoelectrochemical processes.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Elements configuration of the open lead test circuit

In the field of electronics, small electronic devices are widely utilized because they are easy to carry. The devices have various functions by user’s request. Therefore, the lead’s pitch or the ball’s pitch have been narrowed and high-density printed circuit board has been used in the devices. Use of the ICs which have narrow lead pitch makes normal connection difficult. When logic circuits in the devices are fabricated with the state-of-the-art technology, some faults have occurred more frequently. It can be divided into types of open faults and short faults. We have proposed a new test method using a test circuit in the past. This paper propose elements configuration of the test circuit.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Modeling of the photodetector based on the multilayer graphene nanoribbons

Graphene nanoribbon (GNR), which has unique properties and advantages, is a crucial component of nanoelectornic devices, especially in the development of photoelectric detectors. In this work, an infrared photodetector based on the structure of stacked multiple-GNRs, which is separated by a little thick barrier layers (made of tungsten disulfide or related materials) to prevent tunneling current, is proposed and modeled. Operation of photoelectric detector is related to the electron cascaded radiative transition in the adjacent GNRs strengthened by the electrons heated due to the incident light. With a developed model, the working principle is analyzed and the relationships for the photocurrent and dark current as functions of the intensity of the incident radiation are derived. The spectral dependence of the responsivity and detectivity for graphene nanoribbons photodetector (GNRs-PT) with different Fermi energy, band gaps and numbers of GNRs layers are analyzed as well. The results demonstrate that the spectral characteristics depend on the GNRs band gap, which shows a potential on GNRs-PT application in the multi-wavelength systems. In addition, GNRs-PT has a better spectrum property and higher responsivity compared to photodetectors based on In{sub x}Ga{sub x}As in room temperature.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2018

Understanding and predicting geometrical constraint ferroelectric charged domain walls in a BiFeO 3 island via phase-field simulations

It has been known that ferroelectric charged domain walls (CDWs), which break the polarization continuity, may be electrically active with an elevated conductivity. However, the bound charge at CDWs may render them energetically unstable, and thus, forming CDWs naturally and manipulating them electrically is still challenging. Here, we theoretically utilize phase-field simulations to design spontaneously generated CDWs with center-type quad-domains in a single square-shaped BiFeO 3 nanoisland. It is shown that the stability of the spontaneously emerging head-to-head domain walls with center-convergent quad-domains is mainly determined by three contributions, namely, the geometrical constraint from approximately 45°-tilted bottom edges, the electric boundary condition, and the necessary screening free charges to compensate head-to-head domain walls. It is demonstrated that the center-convergent quad-domains with head-to-head CDWs can be electrically switched to the center-divergent one with tail-to-tail CDWs, providing guidance for achieving ferroelectric domain-wall-based nanodevices with low-power dissipation.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

Mechanical Purcell filters for microwave quantum machines

In circuit quantum electrodynamics, measuring the state of a superconducting qubit introduces a loss channel, which can enhance spontaneous emission through the Purcell effect, thus decreasing the qubit lifetime. This decay can be mitigated by performing the measurement through a Purcell filter, which strongly suppresses signal propagation at the qubit transition frequency. If the filter is also well-matched at the readout cavity frequency, it will protect the qubit from decoherence channels without sacrificing measurement bandwidth. In this work, we propose and analyze design for a mechanical Purcell filter, which we also fabricate and characterize at room temperature. The filter is composed of an array of nanomechanical resonators in thin-film lithium niobate, connected in a ladder topology, with series and parallel resonances arranged to produce a bandpass response. Their modest footprint, steep band edges, and lack of cross talk make these filters an appealing alternative to analogous electromagnetic versions currently used in microwave quantum machines.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Considerations and recent advances in nanoscale interfaces with neuronal and cardiac networks

Nanoscale interfaces with biological tissue, principally made with nanowires (NWs), are envisioned as minimally destructive to the tissue and as scalable tools to directly transduce the electrochemical activity of a neuron at its finest resolution. This review lays the foundations for understanding the material and device considerations required to interrogate neuronal activity at the nanoscale. We first discuss the electrochemical nanoelectrode-neuron interfaces and then present new results concerning the electrochemical impedance and charge injection capacities of millimeter, micrometer, and nanometer scale wires with Pt, PEDOT:PSS, Si, Ti, ITO, IrO x , Ag, and AgCl materials. Using established circuit models for NW-neuron interfaces, we discuss the impact of having multiple NWs interfacing with a single neuron on the amplitude and temporal characteristics of the recorded potentials. We review state of the art advances in nanoelectrode-neuron interfaces, the standard control experiments to investigate their electrophysiological behavior, and present recent high fidelity recordings of intracellular potentials obtained with ultrasharp NWs developed in our laboratory that naturally permeate neuronal cell bodies. Recordings from arrays and individually addressable electrically shorted NWs are presented, and the long-term stability of intracellular recording is discussed and put in the context of established techniques. Finally, a perspective on future research directions and applications is presented.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

A graphene edge-mediated quantum gate

We propose a quantum gate architecture that allows for the systematic control of the effective exchange interactions between magnetic impurities embedded in nanoscale graphene flakes connected by a gated bridge. The entanglement between the magnetic moment and the edge states of the fragments is used to electrostatically tune the exchange interaction from ferro to antiferromagnetic by merely changing the bridge's carrier density. By characterizing the effects of size and coupling parameters, we explore different operation regimes of this device by means of exact calculations with the density matrix renormalization group. We analyze the results utilizing a simplified model that accounts for the main many-body mechanisms. Finally, we discuss how to use arrays of these devices to build quantum simulators for quantum many-body Hamiltonians.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

A nanocryotron memory and logic family

The development of superconducting electronics based on nanocryotrons has been limited so far to few device circuits, in part due to the lack of standard and robust logic cells. Here, we introduce and experimentally demonstrate designs for a set of nanocryotron-based building blocks that can be configured and combined to implement memory and logic functions. The devices were fabricated by patterning a single superconducting layer of niobium nitride and measured in liquid helium on a wide range of operating points. The tests show 10 - 4 bit error rates with above ± 20 % margins up to 50 MHz and the possibility of operating under the effect of an out-of-plane 36 mT magnetic field, with ± 30 % margins at 10 MHz. Additionally, we designed and measured an equivalent delay-flip-flop made of two memory cells to show the possibility of combining multiple building blocks to make larger circuits. These blocks may constitute a solid foundation for the development of nanocryotron logic circuits and finite-state machines with potential applications in the integrated processing and control of superconducting nanowire single-photon detectors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Two-axis control of a singlet-triplet qubit with an integrated micromagnet

The qubit is the fundamental building block of a quantum computer. We fabricate a qubit in a silicon double-quantum dot with an integrated micromagnet in which the qubit basis states are the singlet state and the spin-zero triplet state of two electrons. Because of the micromagnet, the magnetic field difference ΔB between the two sides of the double dot is large enough to enable the achievement of coherent rotation of the qubit’s Bloch vector around two different axes of the Bloch sphere. By measuring the decay of the quantum oscillations, the inhomogeneous spin coherence time T * 2 is determined. Lastly, by measuring T * 2 at many different values of the exchange coupling J and at two different values of ΔB, we provide evidence that the micromagnet does not limit decoherence, with the dominant limits on T * 2 arising from charge noise and from coupling to nuclear spins.

97 MATHEMATICS AND COMPUTING↗